Nanowire Sensor, Nano-Tera Conference 2013

7/28/2019 Nanowire Sensor, Nano-Tera Conference 2013

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PI: Christian Schnenberger

Department of Physics andSwiss Nanoscience Insitute

@ University of Basel

Nanowire Sensor

Integrateable Si Nanowire Sensor

Platform for Ion- and Biosensing


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More than Moore


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Electronic Biochip Concept

label free, disposable (cheap) electronic chip

biomolecular-

molecular

interface

electronic-side

electronic

interface

Lieber et al. Science 2001


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Ion Sensitive FET (IS-FET)

source drain

channel conductance (i.e. threshold)depends on gate charge

p-channel, threshold regime

(gate potential)

--

-

-

(source-draincurrent)

--


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source drain


(gate potential)


-

- -

-

- -



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source drain


(gate potential)


-

-

-

-- -

-

e.g. heparime binding on protamie

SHIFT



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Concept & Team

AnalyteReceptor

TransducerSignal processing


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Nanowire fabrication


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PMMA

80nm

145nm

~10nm

p-type (100) SOI

SiO2

Si handle wafer

Si

step 1.

step 4.+5. step 6.+7.

step 11.to14.

metal

SU-8

step 2.+3.

wire length:6um

width: 100nm-1um

silicon

silicon oxide

resist

metal

ALD oxide

epoxy

100nm

Weff= Wtop + 2Wwalls

Kristine Bedner et al.


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operation enhancement mode

insulator Layer HfO2, tins = 5 nm,

poly-Si Gates wg = 25 nm, hg = 50 nm

fin Body hSi = 100 nm, wSi = 50nm

doping Na = 51016

A partially double-gated fin field effect transistor (DG-FinFET) is the

electronic sensing architecture.

S.Rigante, M.Najmzadeh and A. M. Ionescu, EPFL

_

_

_

_

_

_

_


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Solid nanowire array

Particle based nanowire array


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SOI-based NWs

48 silicon nanowires/sample

top width: 100nm 1m

5m

nanowire

drain

micro-

channel

AlSi contacts

wire

bonds

back gatecontact

epoxy

SU-8

10mm


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FinFET NWsOne die incorporates:

o FinFET based sensors and metal gate transistors

(single and multi wires)

o Amplifying architectures based

on two FinFET components

Au 25 m wire ball bonding

Epotecny conductive glue

SU-8

AlSi connections

Sensor

FinFETs

SU-8

AlSi

SiO2

Si Fin

Si Bulk

PtA-B


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Microfluidics

Devices location in -fluidic channels


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in the lab in operation


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System Concept

PCBSi-NW chip CMOS chip

Micro fluidics

low-noise circuitry

on chip biasing and modulation technique

A/D conversion

nanowires can be integrated on the chip orcan be interfaced via a PCB board


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System Architecture

Paolo Livi et al.

16 nanowires can be interfaced in parallel voltage across each nanowire is kept constant, and the current flowing through is measuredTwo different analog-to-digital converter architectures are used (12 bits resolution) Current range: 1 nA to 5 A


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CMOS readout

Paolo Livi et al.

Power consumption: 35 mW

I2F resolution:

8 bits (50 pA

1 A range) 10 bits (10 nA 400 nA range)

Sigma-Delta resolution: 12 bits in the range 2 A

18


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System Architecture

Nanowire Sensor Chip

CMOS Readout ChipPaolo Livi et al.

VDS = 200 mV

sigma-delta modulator

read-out of 4 Si-NW, 9.-10. Nov. 2011

S


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System Architecture

Cross section: 31 nm x 15 nm

Length: 380 m Patterned via e-beam and lift-off

SU-8 microchannel for

measurement in liquid

0 50 100 150 200 250 300 350 400 450 500142

143

144

145

146

Time [s]

Resistance[k

]

Average

Measurement

Adsorption of Cl-

(resistance

increases)

Adsorption of Na+

(resistance

decreases)

Reference Electrode

Voltage

+ 500 mV

- 500 mV

0 V

S


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Sensor parameters

o sensitivity

o selectivityo referencing

o resolution

o signal-to-noise

o reproducibility

o stability

o drift

o response time

extensive studies addressing these parameters using

Si nanowires with ALD passivation

S t


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Sensor parameters

-0.5 0.0 0.5 1.0 1.5 2.00

2

4

6

8

Vsd

=0.1V

NW 1

NW 2

G(S)

Vref

(V)

Vbg

=-6V

pH 7

10-10

10-9

10-8

10-7

10-6

10-5

width =1m

G(S)

120mV/dec

G(

S)

G(S)

Vref (V)

reproducibility

pH response & sensitivity

-0.5 0.0 0.5 1.0 1.5 2.00.0

1.5

3.0

4.5

6.0

7.5

9.0

120mV/dec

Vsd

=0.1V

G(S)

Vref(V)

width =1m

pH 3, 5, 7, 9

Vbg

=-6V

10-10

10-9

10-8

10-7

10-6

10-5

G(S

)

G(

S)

G(S

)

Vref (V)

with good ALD oxides, HfO2 and Al2O3always reach maximum sensitivity of

~ 60 mV/pH

(low p-doped wires in accumulation with

p+-implanted and alloyed contacts)

N t li it d l bilit


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Nernst limit and scalability

Vbg

VrefVlg

A

V

drain

source

VsdA

max sensitivity down to the smallestnanowire with < 100 nm in width both

for Al2O3 and HfO2

K. Bedner et al.

S t


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Sensor parameters

we have

a) a transistor that maximally responds to protons (sensor)with high reproducibility and low hysteresis

Si ISFET f


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Si-ISFET: reference

octadecyldimethylmethoxysilane

(C18 alkane silane) passivation

A. Tarasov et al. Langmuir 28, 9899 (2012)

0 1 2 3 4 5 6 70

20

40

60

80

100

120

contactangle[]

time [days]

Contact angle measurements:

S t


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Sensor parameters

we have


b) a transistor that does not respond to protons (reference)

S ifi i


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Specific ion sensor

Detection of potassium

- differential signal: active and control channel

Vth= (Vth,active Vth,control) = 39 mV/dec,

negative Vth

, due to adsorption of positively

charged K+

- selective detection

control experiment: no response to Na+

M. Wipf et al.

S ifi i


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Specific ion sensor

Detection of sodium

- differential measurement setup

elimination of non-specific Cl- ion adsorptoin,

drift, etc.Vth= 44 mV/dec

- selective detection

control experiment: no response to K+

S t


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Sensor parameters

we have



c) a transistor that can sense other ions selectively

N i M t


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Noise Measurements

A. Tarasov and K. Bedner et al. , e.g. APL, 98, 012114, (2011)

-1.5 -1.0 -0.5 0.0 0.5 1.0 1.50

1

2

3

4

5

6

100nm

200nm

400nm

1m

G(S)

Vgate

(V)

Al2O

3, V

sd=0.1V

1 10 10010

-15

10-14

10-13

10-12

10-11

10-10

10-9

10-8

10-7

10-6

10-5

1.16M

1.49M

3.14M

5.73M

9.26M

14.07M

28.14M

58.60M

321k

321k

498k

802k

S

v(V2 rm

s/Hz)

f (Hz)

67mM, pH 7, Vsd

=0.1V

Wtop

=100nm, Al2O

3 1/f

time

signal

FFT

Noise Measurements


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Noise Measurements

- SVG noise increases with decreasing SiNW width

after normalization by SVGWeff : same noise for all the nanowire widths

- sensor resolution: SVG= 110-5V/Hz1/2, which corresponds to ~100ppm of pH

101

102

103

10-10

10-9

SVG

at10Hz(V2/Hz)normalizedbyW

eff

100nm

200nm

400nm1m

RWeff

(cm)

pH 7 solution

SiNW regimecontact regime

101

102

103

10-10

10-9

SVG

at10Hz(V2/Hz)

100 nm

200 nm

400 nm1 m

RWeff

(cm)

pH 7 solution

noise-source = trapping detrapping noise

Sensor parameters


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Sensor parameters

we have

a) a transistor that maximally responds to protons (sensor)with high reproducibilty and low hysteresis


c) a transistor that can sense other ions selectively (and fast)

d) resolution can reach 100ppm/sqrt(Hz) for a 1m-wide wire.

Note: the resolution (signal-to-noise) is better for wider wires !!!(nano is not always better)

Reproducibility & Stability


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Reproducibility & Stability

-0.5 0.0 0.5 1.0 1.5 2.00

2

4

6

8

Vsd

=0.1V

NW 1

NW 2

G(

S)

Vref

(V)

Vbg

=-6V

pH 7

10-10

10-9

10-8

10-7

10-6

10-5

width =1m

G(S)

120mV/dec

0 24 48 72 96 1200.200

0.205

0.210

0.215

0.220

0.225

0.230

0.235

Vth

[V]

Time (h)

HfO2

gate oxide

pH 6 buffer solution

Stability measurements 5.5 days

FinFET sample (EPFL) 8nm HfO2 gate oxpH6 buffer solution

4 different nanowires Max. Drift ~2mV/day differential drift ~ 0mV

Sensor parameters


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Sensor parameters

we have






e) reproducible and high long term stability

Sensor parameters


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Sensor parameters

we have






e) reproducible and high long term stability

what about biomolecules ???

Smallmolecule

Si

HN

O

O

O

O

O

HO

OHOH

NHAc

~10 nm

~1 nm

Antibody


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Protein Sensing II (FimH)


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Protein Sensing II (FimH)

strongly lectin binding glycoconjugate ligand inactive glycoconjugate control

buffer: 20mM HEPES, 150 mM NaCl, 1mM CaCl2, pH=7.4

2 g/mL =107 nM FimH 10 g/mL = 536 nM FimH

O

HOHO

OH

O

OH

OH

O

2 g/mL =107 nM FimH 10 g/mL = 536 nM FimH

Jolanta Kurz, Arjan Odedra Arjan,

Florian Binder and Giulio Navarra

Conclusions


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Conclusions

1. maximum sensitivity (Nernst limit) can be achieved (Al2O3 and HfO2)

2. oxide surfaces (Al2O3 and HfO2) can be highly selective to protons(yielding ideal pH sensor up to buffer conc. of 10 mM)

3. maximum sensitivity also for the narrowest nanowires

4. charge detection limit best for the narrowest wire, but

5. highest resolution in concentration best for wide wires

6. full passivation possibleideal reference electrode

7. full sensitivity with high selectivity to other ions can be achieved (here

tested K) on functionalized electrodes

8. unclear yet (and also in the literature) whether useful for direct biomolecule

sensing

ISFET application


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ISFET application

ion-torrent

Thanks to


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Thanks to....

Michel Calame

Uni Basel

physics

Oren

KnopfmacherWangyang Fu

Alexey TarasovChristian

Schnenberger

Beat Ernst

EPFL

Adrian Ionescu Kristine Bedner

Bernd

DielacherJolanta KurzUwe Pieles

Andreas

HierlemannPaolo Livi

Arjan Odedra

Sara RiganteMohammadNajmzadeh

Janos Vrs

Robert

MacKenzie

Yihui Chen

BirgitPivnranta

VitaliyGuzenko

ChristianDavid

ETHZ UniBas

pharma

Jens Gobrecht

PSI

D-BSSEFHNW

Matthias Sreiff

Sensirion

Mathias Wipf

RenatoMinamisawa

Ralph Stoop

Floriian Binder

Thanks to


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Thanks to ...

Felix Mayer

CEO Sensirion

Matthias Sreiff
http://localhost/var/www/apps/conversion/tmp/scratch_4/Sensirion_Support.ppt

Nanowire Sensor, Nano-Tera Conference 2013

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