Cabtures - Nano-Tera 2013

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    EnablingAutonomousSensorNodes:

    TunableCarbon

    Nanotube

    Electro

    MechanicalResonators(CabTuRes)

    C.Hierold/C.Roman

    W.Andreoni,A.Magrez/L.Forr,O.Grning,A.Ionescu,

    M.Kayal,

    B.

    Nelson,

    D.

    Poulikakos,

    D.

    Briand

    /N.

    de

    Rooij

    30.05.2013

    NanoTera.ch AnnualPlenaryMeeting,Bern,May30,2013

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    Overview

    CabTuRes proposesaSiP solutiontointegrateCNTresonators(NEMS)withreadout

    electronics(CMOSIC)withinapackageadaptedtoapplication(capwafer)

    CabTuRes isaninterdisciplinaryengineeringresearchprojectatthecrossroadsbetween

    basicscienceandengineeringwithgreatinnovationpotential.

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    5mm

    2

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    Rationale:massbalance

    Yes,itisminiatureanditrequiresultralowpower toexcite/readoutananoresonator

    UnprecedentedmassresolutionincomparisontonanowiresandQCMs(~1cm

    size)inUHVandlowtemperaturedemonstratedinliterature

    SNRandQforSWNTresonatorsatambientconditionsmustbeinvestigated

    UnprecedentedmechanicaltuningrangeofSWNTs(yieldstrainupto

    510%)allowsforaverylargemeasurementrangeinclosedloopoperation.

    Highsensitivityformass

    balance

    because

    of

    low

    m andhigh

    0

    Goal:ultralowpowerandsmallsize&weightisconditionalforautonomous

    sensorsystems

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    Miniaturizationperseisnotthe

    motivationbutallthebenefitscoming

    withminiaturization.

    4

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    Potentialapplications

    thefirstdemonstrationofmassspectrometrybasedonsingle

    biologicalmoleculedetectionwitha[NEMS][Naik etal,Nature

    Nano4,445(2009)]

    achemical

    sensor

    technology

    based

    on

    resonant

    NEMSmassdetectors that[performed]

    chromatographicanalysis of13chemicals

    withina5stimewindow.[Lietal,NanoLett.10,3899

    (2010)]

    Portablemicroanalytical systems Singlemoleculemassspectrometry

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    TheCabTuResTeam

    T5:CMOSIC

    &sys.model

    T3:MEMS

    withCNTs

    T4:CNTmech.

    interfaces

    T1:CNTgrowth

    &integration

    T2:SWNTfund.

    propertiesT6:System

    inPackage

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    HighlightsofResearchAchievements

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    CNTNEMSresonators

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    NottheworstCNTresonatortechnology

    13

    Competition:ebeam litho,

    DCgatestraining

    [Lassagne08]

    [Sazonova04]

    [Witkamp06]

    [Peng06]

    CabTuRes:photolitho,

    MEMSactuatorstraining

    [ShihWeiLee]

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    FeaturesofCNTNEMStechnology

    14

    ShihWeiLeeShihWeiLeeShihWeiLee MatthiasMuothMatthiasMuothMatthiasMuoth

    Lowvoltage,largestroke

    (0.5m/V)thermalactuators

    SilicononInsulator

    decoupledactuationRFsignalpaths

    Leeet

    al,

    to be submitted

    to Sens and Actuators A

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    SOIprocessflow

    Si SiO2 Catalyst Al2O3 Cr/Au

    (a)

    (b)

    (c)

    (d)

    (f)

    (e)

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    Leeetal,IEEE NEMS2011,p.37

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    FeaturesofCNTNEMStechnology

    16

    ShihWeiLeeShihWeiLeeShihWeiLee MatthiasMuothMatthiasMuothMatthiasMuoth

    *measurementsdonotnecessarilycorrespondtothedisplayedCNFETSEM

    stableelectricalcontacts

    smallgatehysteresis

    Leeetal,to be submitted to

    Nanotechnology

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    Resonatorresults

    17

    ShihWeiLeeShihWeiLeeShihWeiLee

    *measurementsdonotnecessarilycorrespondtothedisplayedCNFETSEM

    StuartTruaxStuartTruaxStuartTruax

    DCtunable,

    CNTresonators

    Leeetal,submitted to APL

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    AnotherpromisingCNTNEMSprocess

    20

    piezoresistive,ultraclean,

    suspendedCNFETs

    MatthiasMuothMatthiasMuothMatthiasMuoth

    Muothet

    al,

    MEMS

    2013,

    p.

    496

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    SecondCNTNEMSprocess

    31

    JiCaoJiCaoJiCao highresonator

    density(106/cm2)

    preciseCNT

    alignment

    hysteresis

    freeCNFETs

    Wladek GrabinskiWladek GrabinskiWladek Grabinski SebastianBartschSebastianBartschSebastianBartsch

    Caoetal,IEDM2012

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    [Cao12]

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    SecondCNTNEMSprocess

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    L=750 nm CNTresonators

    @RT

    DCtunable

    resonance

    L=1 m

    higherQ

    @77K

    JiCaoJiCaoJiCao Wladek GrabinskiWladek GrabinskiWladek Grabinski SebastianBartschSebastianBartschSebastianBartsch

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    CNTsynthesis,integrationandproperties

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    Growingcarbonnanotubes

    38

    preciselylocatedCo

    catalystnanoparticles

    ArnaudMagrezArnaudMagrezArnaudMagrezMassimoSpinaMassimoSpinaMassimoSpina

    narrowdiameter

    distribution

    highyield

    CNTgrowth

    narrowdiameterdistribution

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    Growingcarbonnanotubes

    39

    localizedCNTgrowth

    nanoparticledepositiononMEMS

    flowalignedCNTgrowth

    T:1000C,Ethanol,

    laminarflowofAr (10ln/h)+H2 (20ln/h),10min

    ArnaudMagrezArnaudMagrezArnaudMagrezMassimoSpinaMassimoSpinaMassimoSpina

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    processformech.clampingstudies

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    Clampingandtribologyatcontacts

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    inSEM

    manipulation

    inTEM

    manipulation

    LateralForce

    Microscopy

    ManishK.TiwariManishK.TiwariManishK.TiwariSimoneSchrleSimoneSchrleSimoneSchrle

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    Clampingandtribologyatcontacts

    49

    unclampedCNTs

    CNTsclampedwEBIDPt

    ~150nmdefl.

    ~4.4%strain

    ~85nmdefl.

    ~1.4%strain

    (L ~1m)

    ManishK.TiwariManishK.TiwariManishK.TiwariSimoneSchrleSimoneSchrleSimoneSchrle

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    STM/STSofOonCNT

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    ChemisorptiononCNTs

    60

    FabioPietrucciFabioPietrucciFabioPietrucciJaap KroesJaap KroesJaap Kroes

    O.GrningO.GrningO.GrningW.AndreoniW.AndreoniW.Andreoni

    ab initioDFT

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    Interfaceelectroniccircuits

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    SystemTopology&Implementation

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    ChristianKauthChristianKauthChristianKauth MarcPastreMarcPastreMarcPastre interface

    circuit

    topology

    frontend

    electronics

    gain noise

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    SystemTopology&Implementation

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    ChristianKauthChristianKauthChristianKauth MarcPastreMarcPastreMarcPastre interface

    circuit

    topology

    feedbackIC

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    SystemTopology&Implementation

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    ChristianKauthChristianKauthChristianKauth MarcPastreMarcPastreMarcPastre interface

    circuit

    topology

    actuator

    drive

    09.04.2013

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    Systemassembly

    89

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    systemintegration concept

    ThroughSiliconVias

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    DanickBriandDanickBriandDanickBriand RokhayaGueyeRokhayaGueyeRokhayaGueyeTeru AkiyamaTeru AkiyamaTeru Akiyama

    highTresistant

    Ta/Pt TSVs

    ohmiccontacts RFTSVs

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    systemintegration concept

    Capwaferandstudconnections

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    DanickBriandDanickBriandDanickBriand RokhayaGueyeRokhayaGueyeRokhayaGueyeTeru AkiyamaTeru AkiyamaTeru Akiyama

    encapsulation

    process

    Eutecticbonding,

    T=415C,P=1100mbar,

    t=30min

    CMOS NEMS

    assembly

    StudbumpstechnologybyHybridS.A

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    Additionalinformationandtechnicaldetails

    For

    more

    information

    please

    consult

    any

    of

    the

    7

    CabTuRes

    posters

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    9

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    TheCabTuResteamthanksyou!

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    Grouppictureon14.10.2009atETHZurich

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