Wide Band-Gap Semiconductors GaN &SIC

Wide Band Gap - Rap Session 2015

Wide Band-Gap

Semiconductors

GaN & SiC

Why Who What Where When

Your 2015 APEC Rap

Session -

17 of March 2015 – Charlotte, NC

Schedule

• Panelists introduction

• Introduction with presentations

1. Market, players and trends quick update • By Alex AVRON from Point The Gap

2. GaN vs. Silicon • By Ionel Dan Jitaru from Rompower

3. Questions and discussion

time!!!

Panel ?

Dan Jitaro

Alex Lidow

JJ Wilkerson

Eric Persson

Larry Spaziani

Ron Vinsant

Bob White Embedded Power Labs

4 www.pointthegap.com - 2014 | Power electronics and semiconductor competitive intelligence

services

GaN & SiC

Technology & Market knowledge

update

by Alex Avron – alex@pointthegap.com

services

The content

What has been going on

recently in:

Knowledge update starting… 1%

Applications

Market

Players,

Capital &

investment Technologies

services

Gallium Nitride

Knowledge update on going… 2%

services

Announced products with GaN Devices

Max 100W –

5-30kW –

3-30kW –

30W – 240V

US DoE project

services

Gallium Nitride power devices market estimation

$ 100M

$ 200M

$ 300M

$ 400M

$ 500M

$ 600M

$ 700M

2014 2015 2016 2017 2018 2019 2020

GaN power market to 2020 draft estimation

services

GaN power devices start-ups & heavy players

players

Start-ups

services

GaN power devices leaders and their finance ‘sources’

Canadian government

Company acquired by…

Capital investment in ...

Capital investment in …

2nd source

agreement

services

GaN power devices players: What and how?

8’’

6’’

4’’ 2’’

voltage

Device

Cascode

Enhancement

mode planned

Substrate

services

Silicon Carbide

50% Knowledge update on going…

services

Actual to Future products with SiC Switching devices

5-500kW – 600-1200V 30-90kW – 900V 0.5-5MW - 1200V

Auxiliary in test In test

services

Silicon Carbide power devices* market forecast

$ 200M

$ 400M

$ 600M

$ 800M

$ 1 000M

$ 1 200M

2011 2012 2013 2014 2015 2016 2017 2018 2019 2020

Yole - 2013

IMS Research (IHS) - 2013

*Including switches and diodes

services

European SiC players: Foundry, Device, Consulting…

Catania, Italy

Villach, Austria

Erlangen, Germany

Scotland, UK

Belgium

(Packaging)

services

US SiC players: Foundry, Device, Consulting…

services

Japan SiC players: Foundry, Device,

Consulting…

services

Silicon carbide switches availability

R&D Limited

availability

Claimed public availability

services

CONTACT

INFORMATION

SOCIAL MEDIA

www.pointthegap.com

www.pointthepower.com

ADDRESS

61 Cours de la liberté

69003 - Lyon alex@pointthegap.com

+33 6 14 77 22 95

Knowledge update complete 99%

Rompower Confidential

GaN vs. Silicon

Ionel Dan Jitaru

Rompower Energy Systems

To make a direct comparison in a given application

between the utilization of GaNs and Silicon Mosfets of

similar On resistance and packaged in 8 x 8 Thinpak

1000W PFC using two interleaved, 500W Totem Pole

Bridgeless Power Trains

Vin = 90-264 Vac

Vo=385V & Io=2.6A

APPLICATION 1

TOTEM POLE

BRIDGELESS P.F.C.

t0 - t1

- Input current

- PFC current

t0 t1 t2 t3

- Input current

- PFC current

t1 - t2

t0 t1 t2 t3

- Input current

- PFC current

t2 - t3

t0 t1 t2 t3

- Input current

- PFC current

t3 - t4

CRITICAL CONDUCTION PFC

Critical/Boundary Mode Operation

Ipb Controlled

Ipositive

Minimum ON or OFF Time Controlled

Inegative

Ipb Controlled

Frequency Variation

VOLTAGE ACROSS THE SWITCHING DEVICES

ON EACH 500W CELL

1000W PFC MODULE

Rompower Confidential 35

230Vac/60HZ 250W

22.5° Switching Transitions

Ch.1 Switching Node Ch.2 Low Side Vgs

Note: Zoom 40nS/Div Note: Zoom 40nS/Div

Operating Conditions:

22.5° Switching Transitions Operating Conditions:

120mΩ GaN versus 130mΩ Silicon MOSFET

Silicon

230Vac/60HZ 250W

90° Switching Transitions

Operating Conditions:

90° Switching Transitions Operating Conditions:

Silicon

230Vac/60HZ 250W

Silicon

230Vac/60HZ 500W

GAN versus Silicon MOSFET

11% reduction in power dissipation

25.8% reduction in power dissipation

27.5% reduction in power dissipation

0.13% better efficiency at 500W

To remove the larger charge of the silicon Mosfet

requires larger current amplitudes and that increases the

RMS current in switching devices and magnetics. In

addition to that the larger current amplitude increases

the flux swing in the magnetic core and leads to higher

core loss.

CONCLUSION

To remove the charge we can also increase the dead

time and that seams to be slightly more efficient.

However, the efficiency is still lower than GaNs due to

the decrease of the power processing duty cycle.

45W Adapter

Vin = 90-264 Vac

Vo=15V & Io=3A

APPLICATION 2

45W in 10W Apple package

Flyback Topology

The ‘Old’ Flyback

The “Old” Flyback with a “facelift”

Flyback Topology

The “Old” Flyback with a “facelift”

The “Old” Flyback with a second “facelift”

Flyback Topology

90Vac/60HZ - 25% Load Condition

GaN vs. Silicon MOSFET Switching Comparison 45W Adapter Application

130mW MOSFET

Ch.1 MOSFET Vds Ch.2 MOSFET Vgs

Ch.1 GaN Vds Ch.2 GaN Vgs

120mW GaN

Operating Condition: Fs = 61.9 kHZ

90Vac/60HZ

GaN vs. Silicon MOSFET Efficiency Comparison 45W Adapter Application

GaN vs. Silicon MOSFET Switching Comparison 45W Adapter Application

120mW GaN

130mW MOSFET

230Vac/50HZ

CONCLUSION

The impact in efficiency is approximately 1% due to

higher driving loss and secondary effects such as higher

circulating currents impacting the magnetic losses.

GaN vs. Silicon MOSFET Switching Comparison

45W Adapter Application

250mW MOSFET 120mW GaN

90Vac/60HZ

56% reduction in power dissipation on

the main switch

An ideal switch will add just another 0.23% in efficiency at 45W to 92.7%

In this application silicon Mosfet has a very good

dynamic characteristics.

CONCLUSION

The power dissipation on the main switch represents

0.5% of the total power. At low line the power dissipation

on the main switch is lowered by half and the impact on

the total efficiency is only 0.21%.

The “ideal” flyback leaves little room for a much

better switching element.

Though the GaN advantages may have a perceived

marginal benefits in some applications, there are

applications wherein they can make a significant impact.

GENERAL CONCLUSION

The availability of GaNs will stimulate advances in

power conversion technology facilitating higher

frequency and higher power density.

This work was made possible through the support of On

Semiconductor and Transphorm by providing the

samples for the evaluation.

ACKNOWLEDGEMENT

Wide Band-Gap

Semiconductors

GaN & SiC

Your 2015 APEC Rap

Session -

17 of March 2015 – Charlotte, NC

Panel ?

Dan Jitaro

Alex Lidow

JJ Wilkerson

Eric Persson

Larry Spaziani

Ron Vinsant

Bob White Embedded Power Labs

In Memory of Bob Pease

“What’s all this wide

bandgap stuff

anyway?”

Why have WBG devices not taken off yet?

Why do we need more reliability information? If we had it then would you use it? What’s the real

constraint – impediments?

Why are packaged modules not available with WBG devices + Drivers + Controllers

Why do we not have more benchmarks?

• Who are the suppliers going to be?

• Who are the customers – Which ones (markets) will be first?

• Who is going to make the test equipment needed to test the parts?

• Who are going to be the first to make a product utilizing WBG – Esp. GaN?

• What are the impediments to using

• What are the markets that will value

• What are the major objections to using it

or better stated

Where?

• Where will be the the first region of the

world to use it in volume production

• Where can I buy a product that has

WBG in it today?

• Where is all the evidence that the reality

matches the historical hype?

• Where is it going to be used? Topology or

market or…

• When will the investors get a ROI?

– Or better stated – profitable and self funding

• When will there be compelling data that

causes designers to use WBG vs.

CoolMos?

• Will we NOT be having a rap session to

discuss it because WBG is mainstream?

Thank you

From… To…

All of

You Embedded Power Labs

Wide Band-Gap Semiconductors GaN &SIC

Documents

Transcript of Wide Band-Gap Semiconductors GaN &SIC

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