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richardsonrfpd.com

GaN & SiC Technologies for Power Electronics

www.richardsonrfpd.comMARCH 2020



Your Global Source for RF, Wireless, IoT & Power Technologies www.richardsonrfpd.com | 800.737.6927 | 630.262.6800

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Your Source for GaN and SiC ProductsSilicon Carbide (SiC)Silicon carbide (SiC) offers significant advantages in high-power, high-voltage applications where power density, higher performance and reliability are of the utmost importance. Solar inverters, welding, plasma cutters, fast vehicle chargers and oil exploration are a few examples of industrial applications that benefit from the higher breakdown field strength and improved thermal conductivity that SiC offers over silicon (Si) material.

SiC MOSFETs produce much lower switching losses compared to Si IGBTs, as shown in the yellow-highlighted areas below:

Si IGBT SiC MOS

Voltage

Turn

Off

Turn

On Eon = 10.0 mJ

Eoff = 11.2 mJ

Eon = 3.3 mJ

Eoff = 3.2 mJ

SiC Schottky diodes have near-zero reverse recovery losses compared to Si FREDs and are stable over temperature:

Current

Voltage

Current

Current

Current

Voltage

Voltage

SiC MOSFETs have a much more stable RDS(on) over temperature than Si MOSFETs.

SiC MOSFETs include a robust body diode with much lower reverse recovery charge (Qrr) and reverse recovery time (Trr) than Si MOSFETs.

Advantages of designing in SiC include: • SiC diodes have near-zero reverse recovery current • Improved efficiencies and decreased thermal dissipation • Smaller power electronics and system size • Higher power density • Higher operating frequency • Simple parallel operation • Reduced overall system cost



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Gallium Nitride (GaN)

Gallium Nitride, a wide band gap semiconductor, is rapidly displacing Silicon as the material of choice for power transistors. With their superior material properties and simplicity of use, Gan Systems’ GaN E-HEMTs* allow designers to set new standards for efficiency, power density, size and weight.

GaN Systems E-HEMTs are easy to use• Voltage driven, like MOSFETs• True enhancement-mode, normally off• Easily driven by Si or GaN-specific gate driver• Conventional slew rate control using RG

• Simple paralleling

GaN E-HEMT’s Key Properties - Benefits• ZERO reverse recovery – Low power loss, high efficiency• High switching frequency – Size reduction, high power density• Bi-directional conduction – New high efficiency topologies• Intrinsically stable paralleling – Broad power range

GaN Systems GS61008T vs. Infineon BSC070N10N55

ZERO Qrr loss yields higher efficiencies

ZERO Qrr period yields higher switching frequencies

Turn-on loss vs Frequency, hard switching

Zero Reverse Recovery

Frequency

QRR + QOSS

IPW65R048CFDA GS66508T

30kHz 22W 0.5W

100kHz 72W 1.5W

200kHz 144W 3.0W

Turn-on loss comparison @ 400V/22A

VDS

ID

Eon = 6670µJ

VDS

ID

Eon = 92µJ

QRR + QOSS loss

QOSS loss only

SiliconD

S

G

bodydiode

GATE

SOURCE

DRAIN

GaN HEMT has much lower switching loss at higher frequency vs. Si-MOSFET

Vds = 50V Id = 20A

Test condition: Vds = 50V Rg(on) = 4.7Ω Rg(off) = 1 Ω




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GaN Systems Discrete Products

Part Number Voltage (V)

Current (A)

Rds(on) (mΩ)

Gate Charge (nC)

Package(mm) Cooling

GS61004B 100 45 15 6.2 4.6 x 4.4 x 0.51 Bottom-Side

GS61008P 100 90 7 12 7.5 x 4.6 x 0.51 Bottom-Side

GS61008T 100 90 7 12 7.0 x 4.0 x 0.54 Top-Side

GS-065-008-1-L 650 8 225 1.5 PDFN Bottom-Side

GS-065-011-1-L 650 11 150 2 PDFN Bottom-Side

GS-065-004-1-L 650 3.5 500 0.7 PDFN Bottom-Side

GS66502B 650 7.5 200 1.5 5.0 x 6.6 x 0.51 Bottom-Side

GS66504B 650 15 100 3 5.0 x 6.6 x 0.51 Bottom-Side

GS66506T 650 22.5 67 4.4 5.6 x 4.5 x 0.54 Top-Side

GS66508B 650 30 50 5.8 7.1 x 8.5 x 0.5 Bottom-Side

GS66508P 650 30 50 5.8 10.0 x 8.7 x 0.51 Bottom-Side

GS66508T 650 30 50 5.8 6.9 x 4.5 x 0.54 Top-Side

GS66516B 650 60 25 12 11.0 x 9.0 x 0.51 Bottom-Side

GS66516T 650 60 25 12 9.0 x 7.6 x 0.54 Top-Side

GS-065-080-1-D 650 80 18 16 6.6 x 5.6 x 0.26 Die

GS-065-150-1-D 650 150 10 33 12.6 x 5.6 x 0.3 Die

Discrete E-HEMTs

GS61004B(4.6 x 4.4)

GS61008P(7.0 x 4.0)

GS61008T(7.0 x 4.0)

GS66502B(5.0 x 6.6)

GS66504B(5.0 x 6.6)

GS66506T(5.6 x 4.5)

GS66508B(7.0 x 8.4)

GS66508P(10.0 x 8.7)

GS66516T(9.0 x 7.6)

GS66508T(6.9 x 4.5)

GS-065-150-1-D-1 (12.56 x 5.6)

PDFN(5 x 6)

GS-065-080-1-D(5.6 x 6.6)

GS66516B(11.0 x 9.0)


Current (A)

Rds(on) (mΩ)

Gate Charge (nC)

Package(mm) Cooling

GS-065-060-5-T-A 650 30 25 15 9.0 x 7.0 x 0.5 Top-Side

GS-065-060-5-B-A 650 30 25 15 11.0 x 9.0 x 0.5 Bottom-Side

Automotive E-HEMTs

GS-065-060-5-B-A (11.0 x 9.0)

GS-065-060-5-T-A(9.0 x 7.0)



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Part NumberVoltage

(V)Rds(on)

(mΩ)Current

(A)Package Config

CCS020M12CM2 1200 80 20 EconoPACK2TM 3-Phase Bridge

CCS050M12CM2 1200 25 50 EconoPACK2TM 3-Phase Bridge

CAS120M12BM2 1200 13 193 D3 Half bridge

CAS300M12BM2 1200 4.2 300 D3 Half bridge

CAS325M12HM2 1200 3.7 325 HM2 Half bridge

CAB400M12XM3 1200 4 400 XM3 Half bridge

CAB425M12XM3 1200 3.2 425 XM3 Half bridge

CAB450M12XM3 1200 2.6 450 XM3 Half bridge

CAS300M17BM2 1700 8 300 D3 Half bridge

Part NumberVoltage

(V)Rds(on)

(mΩ)Package

C3M0015065 650 15 D, K

C3M0060065 650 60 D, J, K

C3M0030090 900 30 K

C3M0065090 900 65 D, J, K

C3M0120090 900 120 D, J

C3M0280090 900 280 D, J

C3M0016120 1200 16 D, K

C3M0021120 1200 21 D, K

C2M0025120 1200 25 D

C3M0032120 1200 32 D, K

C2M0040120 1200 40 D

C3M0075120 1200 75 D, J, K

C2M0080120 1200 80 D

C2M0160120 1200 160 J

C2M0280120 1200 280 J

C2M0045170 1700 45 D, P

C2M0080170 1700 80 P

C2M1000170 1700 1000 D, J

Part NumberVoltage

(V)Rds(on)

(mΩ)Package

E3M0065090D 900 65 D

E3M0120090D 900 120 D

E3M0280090D 900 280 D

Part NumberVoltage

(V)Rds(on)

(mΩ)Package

CPM3-0900-0010A 900 10 Die

CPM3-0900-0030A 900 30 Die

CPM3-0900-0065B 900 65 Die

CPM3-1200-0013A 1200 13 Die

CPM3-1200-0016A 1200 16 Die

CPM2-1200-0160B 1200 160 Die

CPM3-1200-0021A 1200 21 Die

CPM2-1200-0025B 1200 25 Die

CPM3-1200-0032A 1200 32 Die

CPM2-1200-0040B 1200 40 Die

CPM3-1200-0075A 1200 75 Die

CPM2-1200-0080B 1200 80 Die

CPM2-1700-0045B 1700 45 Die

Discrete MOSFETs MOSFET Dies

AEC-Q101 MOSFETs

MOSFET Modules

TO-247 [D] TO-247-4L [K] TO-247-4Plus [P]

TO-263-7L [J] (7L D2PAK)

62x108 (D3)

45x108 (EconoPACKTM 2)

65x110 (High Performance 65mm)

53 x 80(XM3)

SiC Products




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Part NumberVoltage

(V)Current

(A)Package

E4D10120A 1200 10 A

E4D20120A 1200 20 A

EPW4-1200-S010A 1200 10 Die

EPW4-1200-S020A 1200 20 Die

Part NumberVoltage

(V)Current

(A)Package

CPW2-0600-S006B 600 6 Die

CPW2-0600-S008B 600 8 Die

CPW2-0600-S010B 600 10 Die

CPW3-0650-S004B 650 4 Die

CPW2-0650-S006B 650 6 Die

CPW2-0650-S008B 650 8 Die

CPW2-0650-S010B 650 10 Die

CPW2-0650-S012B 650 12 Die

CPW2-0650-S016B 650 16 Die

CPW5-0650-Z030B 650 30 Die

CPW5-0650-Z050B 650 50 Die

CPW4-1200-S002B 1200 2 Die

CPW4-1200-S005B 1200 5 Die

CPW4-1200-S008B 1200 8 Die

CPW4-1200-S010B 1200 10 Die

CPW4-1200-S015B 1200 15 Die

CPW4-1200-S020B 1200 20 Die

CPW5-1200-Z050B 1200 50 Die

CPW5-1700-Z005A 1700 5 Die

CPW3-1700-S010B 1700 10 Die

CPW5-1700-Z010A 1700 10 Die

CPW3-1700-S025B 1700 25 Die

CPW5-1700-Z025A 1700 25 Die

CPW5-1700-Z050B 1700 50 Die

Part NumberVoltage

(V)Current

(A)Package Config

CSD01060 600 1 A, E Single

C3D1P7060Q 600 1.7 Q Single

C3D02060 600 2 A, E, F Single

C3D03060 600 3 A, E, F Single

C3D04060 600 4 A, E, F Single

C3D06060 600 6 A, F, G Single

C3D08060 600 8 A, G Single

C3D10060 600 10 A, G Single

C3D02065 650 2 E Single

C3D03065 650 3 E Single

C3D04065 650 4 A, E Single

C6D04065 650 4 A Single

C3D06065 650 6 A, E, I Single

C6D06065 650 6 A Single

C3D08065 650 8 A, E, I Single

C6D08065 650 8 A Single

C3D10065 650 10 A, E, I Single

C6D10065 650 10 A Single

C3D12065 650 12 A Single

C3D16065 650 16 A, D, D1 Single

CVFD20065 650 20 A Single

C5D50065 650 50 D Single

C4D02120 1200 2 A, E Single

C4D05120 1200 5 A, E Single

C4D08120 1200 8 A, E Single

C4D10120 1200 10 A, D, E, H Single

C4D15120 1200 15 A, D, H Single

C4D20120 1200 20 A, D, H Single

C5D05170 1700 5 H Single

C3D10170 1700 10 H Single

C5D10170 1700 10 H Single

C3D25170 1700 25 H Single

C5D25170 1700 25 H Dual CC

C3D16060 600 16 D Dual CC

C3D20060 600 20 D Dual CC

C3D16065 650 16 D Dual CC

C3D20065 650 20 D Dual CC

C3D30065 650 30 D Dual CC

C4D10120 1200 10 D Dual CC

C4D15120 1200 15 D Dual CC

C4D20120 1200 20 D Dual CC

C4D30120 1200 30 D Dual CC

C4D40120 1200 40 D Single

Discrete Diodes

Diode Dies

AEC-Q101 Diodes

TO-252-2 [E] (DPAK)

TO-263-2 [G] (D2PAK)

QFN 3.3 [Q]TO-220-F2 [F] (Full Pack)

TO-220-2 [A] and TO-220 [I]Isolated

TO-247-3[D or D1]

TO-247-2 [H]



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Diode Modules

62x108 (SP6FB)

SOT-227 (Isotop)

41x52 (SP1)

34 x 94 (D1P)

62x108 (SP6)


Current (A) Package Config

MSC2X30SDA070J 700 30 SOT-227 Dual anti-parallel

MSC2X31SDA070J 700 30 SOT-227 Dual parallel



MSCDC50H701AG 700 50 SP1 Full Bridge

MSCDC50H70HJ 700 50 SOT-227 Full Bridge

MSCDC50X701AG 700 50 SP1 3-Phase Bridge



MSCDC100A70D1PAG 700 100 D1P Phase Leg

MSCDC100H70AG 700 100 SP6FB Full Bridge

MSCDC100KK70D1PAG 700 100 D1P Dual CC




MSCDC200H70AG 700 200 SP6FB Full Bridge


MSCDC300A70AG 700 300 SP6 Phase Leg



MSC2X100SDA120J 1200 100 A SOT-227 Dual anti-parallel

MSC2X101SDA120J 1200 100 A SOT-227 Dual parallel

MSCDC100A120D1PAG 1200 100 A D1P Phase Leg

MSCDC100H120AG 1200 100 A SP6FB Full Bridge

MSCDC100KK120D1PAG 1200 100 A D1P Dual CC




MSCDC200H120AG 1200 200 A SP6FB Full Bridge




MSCDC300A120AG 1200 300 A SP6 Phase Leg




MSCDC50H1201AG 1200 50 A SP1 Full Bridge

MSCDC50H120HJ 1200 50 A SOT-227 Full Bridge

MSCDC50X1201AG 1200 50 A SP1 3-Phase bridge


MSC50DC170HJ 1700 50 SOT-227 Full Bridge

MSCDC50H1701G 1700 50 SP1 Full Bridge

SiC Products




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MSCDC50X1701G 1700 50 SP1 3-Phase Bridge

MSCDC100170D1PG 1700 100 D1P Phase Leg

MSCDC100H170G 1700 100 SP6FB Full Bridge

MSCDC100KK170D1PG 1700 100 D1P Dual CC




MSCDC200H170G 1700 200 SP6FB Full Bridge


MSCDC300170G 1700 300 SP6 Phase Leg



Part NumberVoltage

(V)Current

(A)Package

MSC010SDA070 700 10 B, K

MSC030SDA070 700 30 B, K, S

MSC050SDA070 700 50 B, S

MSC010SDA120 1200 10 B, K

MSC015SDA120 1200 15 B

MSC030SDA120 1200 30 B, K, S

MSC050SDA120 1200 50 B, S

MSC010SDA170 1700 10 B

MSC030SDA170 1700 30 B

MSC050SDA170 1700 50 B

Part NumberVoltage

(V)Current

(A)Package

MSC010SDA070D/S 700 10 Die










Discrete Diodes Diode Dies

Diode Modules (cont’d)

62x108 (SP6FB)

41x52 (SP1)

34 x 94 (D1P)

62x108 (SP6)

TO-220-2 [K] TO-247-2 [B] D3PAK [S](TO-268)



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Part NumberVoltage

(V)Current

(A)Rds(on)

(mΩ)Package Config

MSCSM70VM10C4AG 700 97 7.5 SP4 Vienna Phase Leg

MSC100SM70JCU2 700 97 15 SOT227 Boost Chopper

MSC100SM70JCU3 700 97 15 SOT227 Buck Chopper

MSCSM70TAM19CT3AG 700 97 15 SP3F 3-Phase Bridge

MSCSM70AM19CT1AG 700 97 15 SP1F Phase Leg

MSCSM70HM19CT3AG 700 97 15 SP3F Full Bridge

MSCSM70VM19C3AG 700 97 15 SP3F Vienna Phase Leg

MSCSM70TAM10CTPAG 700 186 7.5 SP6-P Triple Phase Leg

MSCSM70AM10CT3AG 700 188 7.5 SP3F Phase Leg

MSCSM70TAM05TPAG 700 273 5 SP6-P Triple Phase Leg


MSCSM70AM025CD3AG 700 538 2.5 D3 Phase Leg

MSCSM70AM025CT6AG 700 538 2.5 SP6 Phase Leg

MSCSM70AM025CT6LIAG 700 538 2.5 SP6LI Phase Leg















MSCSM120TAM16CTPAG 1200 136 12.5 SP6-P Triple Phase Leg

MSC130SM120JCU2 1200 138 12.5 SOT227 Boost Chopper

MSC130SM120JCU3 1200 138 12.5 SOT227 Buck Chopper


MSCSM120HM16CT3AG 1200 138 12.5 SP3F Full Bridge


MSCSM120HM16CT3AG 1200 138 12.5 SP3F Full Bridge

MSCSM120TAM11CTPAG 1200 200 11 SP6-P Triple Phase Leg

MSCSM120TAM11CTPAG 1200 200 11 SP6-P Triple Phase Leg

MSCSM120SKM11CT3AG 1200 202 8.3 SP3F Buck Chopper

MOSFET Modules

41x93 (SP4)

62x108 (SP6P)

43x73 (SP3F)

SOT-227 (Isotop)

41x52 (SP1)

62x108 (SP6)




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Part NumberVoltage

(V)Current

(A)Rds(on)

(mΩ)Package Config



MSCSM120DAM11CT3AG 1200 202 11 SP3F Boost Chopper

















Part NumberVoltage

(V)Rds(on)

(mΩ)Package

MSC015SMA070 700 15 B, B4, S

MSC035SMA070 700 35 B, B4, S

MSC060SMA070 700 60 B, B4, S

MSC090SMA070 700 90 B, S

MSC025SMA120 1200 25 B, B4, J, S

MSC040SMA120 1200 40 B, B4, J, S

MSC080SMA120 1200 80 B, B4, J, S

MSC045SMA170 1700 45 B, B4, S

MSC750SMA170 1700 750 B, B4, S

Discrete MOSFETs

SOT-227 [J] (Isotop)

TO-247-3 [B] TO-247-4 [B4] D3PAK [S](TO-268)

MOSFET Modules (cont’d)

43x73 (SP3F)

62x108 (D3)

62 x 108(SP6LI)

62x108 (SP6)



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41x93 (SP4)

Si/SiC Hybrid Modules



APTM50HM75SCTG 500 34 SP4 Full-Bridge MOSFET/Series FRED/Parallel SiC

APT58M50JCU2 500 43 SOT-227 Boost Chopper MOSFET/SiC diode

APTM50AM38SCTG 500 67 SP4 Half-Bridge MOSFET/Series FRED/Parallel SiC

APTM50AM24SCG 500 110 SP6 Half-Bridge MOSFET/Series FRED/Parallel SiC

APTC60HM70SCTG 600 29 SP4 Full-Bridge MOSFET/Series FRED/Parallel SiC

APT50N60JCCU2 600 38 SOT-227 Boost Chopper MOSFET/SiC diode

APTC60HM45SCTG 600 38 SP4 Full-Bridge MOSFET/Series FRED/Parallel SiC

APTC60AM35SCTG 600 54 SP4 Half-Bridge MOSFET/Series FRED/Parallel SiC


APTC60SKM24CT1G 600 70 SP1 Buck Chopper MOSFET/SiC diode

APTC60TAM21SCTPAG 600 87 SP6P 3 phase bridge MOSFET/Series FRED/Parallel SiC

APTC60AM18SCG 600 107 SP6 Half-Bridge MOSFET/Series FRED/Parallel SiC

APTC60DAM18CTG 600 107 SP4 Boost Chopper MOSFET/SiC diode

APTC80H29SCTG 800 11 SP4 Full-Bridge MOSFET/Series FRED/Parallel SiC

APTC80A15SCTG 800 21 SP4 Half-Bridge MOSFET/Series FRED/Parallel SiC

APTC80A10SCTG 800 32 SP4 Half-Bridge MOSFET/Series FRED/Parallel SiC

APTC80AM75SCG 800 43 SP6 Half-Bridge MOSFET/Series FRED/Parallel SiC

APTC90H12SCTG 900 23 SP4 Full-Bridge MOSFET/Series FRED/Parallel SiC

APT33N90JCCU2 900 25 SOT-227 Boost Chopper MOSFET/SiC diode


APTC90DAM60CT1G 900 44 SP1 Boost Chopper MOSFET/SiC diode

APTC90SKM60CT1G 900 44 SP1 Buck Chopper MOSFET/SiC diode

APTM100H45SCTG 1000 14 SP4 Full-Bridge MOSFET/Series FRED/Parallel SiC


APT26M100JCU3 1000 20 SOT-227 Buck Chopper MOSFET/SiC diode

APTM100A13SCG 1000 49 SP6 Half-Bridge MOSFET/Series FRED/Parallel SiC

APTC100TAM35SCTPAG 1000 50 SP6P 3 phase bridge MOSFET/Series FRED/Parallel SiC

APTM100UM65SCAVG 1000 145 SOT-227 Single MOSFET/Series FRED/Parallel SiC


APT20M120JCU3 1200 15 SOT-227 Buck Chopper MOSFET/SiC diode

APTMC120HR11CT3AG 1200 20 SP3F T-Type SiC MOSFET/IGBT3

APTM120DA30CT1G 1200 23 SP1 Boost Chopper MOSFET/SiC diode

APT25GLQ120JCU2 1200 25 SOT-227 Boost Chopper IGBT/SiC diode

APT40GLQ120JCU2 1200 40 SOT-227 Boost Chopper IGBT/SiC diode

APTGLQ40DDA120CT3G 1200 40 SP3F Dual Boost Chopper IGBT/SiC diode

APTMC120HRM40CT3AG 1200 55 SP3F T-Type SiC MOSFET/IGBT3

APTM120U10SCAVG 1200 116 SOT-227 Single MOSFET/Series FRED/Parallel SiC62x108 (SP6P)

43x73 (SP3F)

SOT-227 (Isotop)

41x52 (SP1)

62x108 (SP6)




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Part NumberVoltage

(V)Rds(on)

(mΩ)Current

(A)Package Config

10-PC094PB017ME02-L620F36Y 900 17 140 flow 0 H-Bridge

10-PC094PB035ME02-L629F36Y 900 35 70 flow 0 H-Bridge

10-PY096PA035ME-L224F18Y 900 35 70 flow 1 Sixpack

10-PC094PB065ME01-L637F06Y 900 65 33 flow 0 Dual Half-Bridge

10-PY126PA020ME-L227F18Y 1200 20 50 flow 1 Sixpack

10-PY126PA020MR-L227F28Y 1200 20 50 flow 1 Sixpack

10-PZ123BA040MR01-M909L68Y 1200 40 20 flow 0 3x Boost

30-FT123BA040MR-L878L08 1200 40 20 flow 2 3x Boost

10-FY12B2A040MR-L387L68 1200 40 30 flow 1 Dual Boost

10-FY12B2A040MR02-L387L63 1200 40 30 flow 1 Dual Boost

10-PZ12B2A040ME01-M330L63Y 1200 40 35 flow 0 Dual Boost

10-PZ12B2A040MR01-M330L68Y 1200 40 35 flow 0 Dual Boost

10-PY126PA040MR-L226F28Y 1200 40 35 flow 1 Sixpack

10-PC124PA040MR-L638F18Y 1200 40 40 flow 0 Dual Half-Bridge

10-PZ123BA080ME-M909L18Y 1200 80 35 flow 0 3x Boost

10-PZ123BA080MR-M909L28Y 1200 80 35 flow 0 3x Boost

V23990-P629-L81-PM 1200 80 35 flow 0 Dual Boost

V23990-P629-L83-PM 1200 80 35 flow 0 Dual Boost

10-PZ126PA080ME-M909F18Y 1200 80 35 flow 0 Sixpack

10-PZ126PA080MR-M909F28Y 1200 80 35 flow 0 Sixpack



10-PG12NAB008MR02-LC59F36T 1200 100 flow 0 MNPC (T-Type)/IGBT/SiC MOSFET

10-PG12NAB008MR04-LC59F46T 1200 100 flow 0 MNPC (T-Type)/IGBT/SiC MOSFET

30-PT12NIA150SH-LG09F08 1500 150 flow 2 NPC/IGBT/SiC Diodes

30-FT10NIA375F9-LQ08F08 1500 375 flow 2 NPC/IGBT/SiC Diodes

30-FT10NIA400S7-LP59F08 1500 400 flow 2 NPC/IGBT/SiC Diodes

30-PT10NIA400S7-LP59F08Y 1500 400 flow 2 NPC/IGBT/SiC Diodes

10-PG12NAC008MR02-LC69F36T 2400 150 flow 1 ANPC/IGBT/SiC MOSFET

10-PG12NAC008MR04-LC69F46T 2400 150 flow 1 ANPC/IGBT/SiC MOSFET

10-PZ12NMA027ME-M340F63Y 2400 150 flow 1 Dual ANPC/IGBT/SiC MOSFET

10-PZ12NMA027MR-M340F68Y 2400 150 flow 1 Dual ANPC/IGBT/SiC MOSFET

MOSFET Modules


37x82 (Flow 1)

33x66 (Flow 0)

47x108 (Flow 2)

SiC Products



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Franchised for Mitsubishi in NA only.



PSF15S92F6 600 15 SuperMini DIP DIPIPM/6-in-1

PSF20L91A6-A 600 20 SuperMini DIP Boost Chopper PFC/Dual/Full SiC

PSH20L91A6-A 600 20 SuperMini DIP Boost Chopper PFC/Dual/IGBT/SiC diode

PSF25S92F6 600 25 SuperMini DIP DIPIPM/6-in-1

PSH50YA2A6 600 50 Large DIP Full-Bridge/IGBT/SiC diode

CMH100DY-24NFH 1200 100 48 x 94mm Half-Bridge IGBT/SiC diode

CMH150DY-24NFH 1200 150 48 x 94mm Half-Bridge IGBT/SiC diode

CMH200DU-24NFH 1200 200 62 x 108mm Half-Bridge IGBT/SiC diode


CMH300DX-24NFH 1200 300 62 x 152mm Half-Bridge IGBT/SiC diode


CMH400HC6-24NFM 1200 400 62 x 108mm Single IGBT/SiC diode


CMH1200DC-34S 1700 1200 130 x 140mm Dual IGBT/SiC diode


62x10848x94

62x152

80x110

SuperMini DIP Large DIP

130x140




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Tamura’s 2DM180506CM and 2DM180206CM gate driver modules feature the characteristics – low common-mode noise and high-speed response – required for driving silicon carbide modules. Additional features of this series include:

• Integrated DC/DC converter with gate driver • Dielectric withstand voltage: AC 2500Vrms• Low common mode noise (parasitic capacitance: 15pF typical) • Fast response (100ns typical)• 5V logic input • Over current protection by DESAT detection• 70kV/usec CMTI

Part Number Output Voltage (on) / (off) Peak Current Oper Temp Max Freq2DM180206CM (17V to 19V) / (-1V to -3V) 18A -30C to +85C 200kHz

2DM180506CM (17V to 19V) / (-4V to -6V) 18A -30C to +85C 200kHz

2DMB80407CC (17V to 19V) / (-3V to -5V) 35A -30C to +85C 200kHz

2DMB80206CC (17V to 19V) / (-1V to -3V) 35A -30C to +85C 200kHz

Microsemi offers gate drive modules to maximize the performance of their SiC products. The MSCSICMDD/REF1 is a universal SiC driver with adjustable output that can be used on most modules. The MSCSICSP3/REF2 is specifically designed for easy mounting to SiC offering in the SP3 package. The MSCSICSP6/REF3 is designed for SiC in the all new, high performance SP6LI package, featuring ultra-low 2.9nH of stray inductance.

Part Number Outputs Device Voltage Peak Current Products Max FreqMSCSICMDD/REF1 2 700V/1200V 30A Universal 400kHz

MSCSICSP3/REF2 2 1200V 30A SP3 package 400kHz

MSCSICSP6/REF3 2 1200V 30A SP6LI Package 400kHz

MSCSICMDD/REF1 MSCSICSP3/REF2 MSCSICSP6/REF3

High-speed Gate Drivers for GaN & SiC

AgileSwitch, LLC develops transformative technology that dramatically improves the performance and efficiency of electric vehicle and renewable energy applications. Patented Augmented SwitchingTM technology in our Gate Driver Cores, Plug and Play Gate Drivers are suitable for SiC and IGBT switches. AgileSwitch drivers can be fully customized to meet the needs and demands of virtually any customer application.

Part Number Outputs Device Voltage Peak Current Products Max Freq2ASC-12A1HP 2 1200V 10A 150kHz 1200V High Performance Driver Core.

62EM1-00001 2 1200V, 1700V 20A 200kHzPlug and Play Driver for CAS120M12BM2,

CAS300M12BM2, CAS300M17BM2

62CA1 2 1200V 10A 150kHz Adapter Board for 1200V Half-Bridge 62mm/D3 packages

62CA2 2 1200V 10A 150kHz Adapter Board for Wolfspeed 1200V CAS325M12HM2

ASDAK-2ASC-12A1HP-62

2 1200V 10A 150kHzAccelerated SiC Dev Kit includes 3ea 2ASC-12A1HP core, 62mm adapter

bd., 1ea device programmer, 1ea Intelligent Config Tool download.

62CA1 62CA2 2ASC-12A1HP 62EM1-00001 ASDAK-2ASC12A1HP-62



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High-speed Gate Drivers for GaN & SiC

Wolfspeed offers a range of gate driver products for their discrete and module SiC devices with 1, 2 and 6 channel outputs. These products are designed to maximize performance and feature isolated power supplies, and module products also feature short circuit, over temperature and under voltage protection in direct mount, low inductance designs.

Part Number Outputs Device Voltage Peak Current Products Max FreqCGD15FB45P1 6 1200V 9A CCSxxxM12CM2 250kHz

CGD15HB62P1 2 1200V 9A CASxxxM12BM2 64kHz

CRD-001 1 1200V, 1700V 9A C2M/CMF —

CGD15HB62LP 2 1200V 14A CAS325M12HM2 115kHz

CGD15SG00D2 1 900V, 1200V 9A C3M —

CGD12HBXMP 2 1200V 10A CAB450M12XM3 80kHz

CGD12HB00D 2 1200V 10A CGD12HBXMP / CGD15HB62LP 1MHz

CGD15HB62LPCGD15FB45P1 CRD-001 CGD15HB62P1 CGD15SG00D2CGD12HBXMP CGD12HB00D

In addition to driving conventional Si-based power devices like IGBTs and MOSFETs, SCALE-2, SCALE-2+ gate driver cores and SCALE-iDriver gate driver ICs are also capable of driving SiC MOSFET power switches. However, SiC switches often require turn-on and turn-off voltage levels which are different from those required by Si-based devices. Application Note AN-1601 on the Power Integrations website outlines how to modify the devices below in order to provide correct drive levels and control of SiC based modules.

Part Number Outputs Device Voltage Max Output Peak Current CMTI Max Freq

SIC1182K 1 1200V 30V 8A 100kV/usec 250kHz

2SC0115T-12 2 1200V 30V 15A 50kV/usec 50kHz




2SC0650P-17 2 1700V 30V 50A 100kV/usec 150kHz

1SC2060P-17 2 1700V 30V 60A 100kV/usec 500kHz

2SC0535T-17 2SC0115T-12 2SC0635T-45 1SC2060P-17 SIC1182K 2SC0650P-17 2SC0435T-17

Isolated gate drivers provide electrical isolation as well as strong gate drive capability, which is often required for safety and robustness in many system architectures. The isolated gate driver portfolio from Analog Devices offers designers performance and reliability advantages over optocouplers or pulse transformers by utilizing ADI’s proven iCoupler® technology. The isolated gate driver family offers the advantage of a maximum propagation delay of 50 ns, less than 5 ns channel-to-channel matching, up to 150kV/use Common Mode Transient Immunity (CMTI), and output voltages to cover all SiC and GaN drive levels.

Part Number Outputs Max output Peak Current CMTI Miller Clamp UVLO

ADuM4120 1 35V 2A 150kV/usec No Yes

ADuM4121 1 35V 2A 150kV/usec Yes Yes






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High-speed Gate Drivers for GaN & SiC (cont.)

RECOM offers DC/DC converters designed for GaN and SiC gate drive applications. The modules are available with input voltages of 5, 12, 15, or 24VDC with two asymmetric outputs of +20V / -5V and +15V /-3V for SiC and single +6V output for GaN. The modules offer 3kVDC to 6.4kVDC isolation and operating temperature range of -40C to +100°C (with derating) to meet harsh environmental requirements.

Part Number Output Voltage Input Voltage Power Short Circuit Protect Iso Voltage

RPxx06S 6 5, 12, 15, 24 2W No 5.2kV

RKZxx2005D +20/-5 5, 12, 15, 24 2W Yes 3kV, 4kV

RxxP21503D +15/-3 12, 15, 24 1W Yes 6.4kV

RxxP22005D +20/-5 5, 12, 15, 24 2W Yes 6.4kV

RxxP22005DRPxx06S RxxP21503D RKZxx2005D

High Isolation DC-DC Converters for GaN & SiC Gate Driver Applications

pSemi’s UltraCMOS® technology enables integrated circuits to operate at much faster speeds than conventional CMOS technologies. With a switching frequency up to 40 MHz (PE29102), pSemi’s GaN FET drivers deliver the industry’s fastest switching speeds, empowering design engineers to extract the full performance advantages from GaN transistors, resulting in significantly smaller power converters with increased power density.

Part Number Max Gate Drive Peak Current Max Freq Propagation DelayPE29101 6.5V 2A/4A source/sink 40MHz 11ns

PE29102 6.0V 2A/4A source/sink 40MHz 9ns

Ceramic Capacitors for Fast Switching GaN & SiC

TDK CeraLinkTM capacitors are a highly compact solution for the snubber and DC links of fast-switching converters based on SiC and GaN semiconductors. These capacitors are based on a PLZT ceramic material (lead lanthanum zirconate titanate). In contrast to conventional ceramic capacitors, CeraLinkTM capacitors have their maximum capacitance at the application voltage, and this even increases proportionately to the share of the ripple voltage. The capacitors are designed for an operating temp from -40°C to +125°C and can withstand brief exposures up to +150°C.

Type Capacitance Voltage (Rated)

Voltage (Optimal)

Voltage (Peak) Current (Arms) ESL ESR

(25DegC @1MHz) Terminal

B58031 1uF 500V 400V 650V 10A 3nH 12mΩ J-lead, L-lead

B58031 0.5uF 700V 600V 1000V 6A 3nH 24mΩ J-lead, L-lead

B58031 0.25uF 900V 800V 1300V 5A 3nH 45mΩ J-lead, L-lead

B58033 20uF 500V 400V 650V 32A 4nH 12mΩ Solder-Pin



B58035 10uF / 3uF / 2uF 500V 400V 650V 38A / 17A / 14A 3nH 3mΩ / 4mΩ / 5mΩ FA J-lead

B58035 5uF / 1.5uF / 1uF 700V 600V 1000V 30A / 13A /11A 3nH 5mΩ /12mΩ / 17mΩ FA J-lead

B58035 2.5uF / 0.75uF / 0.5uF 900V 800V 1300V 23A / 9A / 7A 3nH 7mΩ / 20mΩ / 29mΩ FA J-lead

J-lead package L-lead package Solder Pin FA J-Lead



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KEMET’s KC-LINKTM surface mount capacitors use Kemet’s proprietary C0G base metal electrode dielectric and are designed to meet the growing demand for fast-switching wide bandgap (WBG) semiconductors that operate at higher voltages, temperatures, and frequencies. With extremely low effective series resistance (ESR) and very low thermal resistance, KC-LINKTM capacitors can operate at very high ripple currents with no change in capacitance versus DC voltage, and negligible change in capacitance over temperature of -55°C to 150°C. Suitable for snubber, DC-link and resonant applications. Available in AEC-Q200 automotive grade.

Payton Planar offers standard and custom planar transformers for automotive, defense, industrial, medical, space & aviation, and telecom applications. Transformers made of the planar principle eliminate virtually all the shortcomings of old-fashioned wire wound types. In a planar design, the windings are made of copper foil lead frames or printed circuit boards. (Flat copper spirals laminated into thin dielectric substrates). These windings are then sandwiched, along with appropriate insulators, between large area, yet thin, state-of-the-art ferrite cores. This construction technique yields a host of benefits including high power density, high efficiency, good thermal conduction, low profile, low leakage inductance and high repeatability.

Power Operating Frequency Peak Operating Voltage RMS Current Typical Efficiency

5W - 150kW 50kHz - 5MHz Up to 1500V mA - 1000A+ 97% - 99%

Transformers Optimized for GaN & SiC

Size 250 Size 5000 Size 551 Size 80

Series Rated Volt Peak Voltage Capacitance Range Operating Temp

CKC33C-Series 500V 750V 4700pF – 0.22uF -55C to +150C

CKC33C-Series 650V 845V 4700pF – 0.15uF -55C to +150C

CKC33C-Series 1000V 1200V 4700pF – 56000pF -55C to +150C



Ceramic Capacitors for Fast Switching GaN & SiC

SiC and GaN Power Semiconductors deliver greater efficiency while operating at much higher frequencies than regular Si semiconductors. Power magnetics used in these designs must be able to handle high current and fast-switching speeds that can exceed 1MHz. Eaton FP and HC series are designed to deliver high power density by using high frequency core materials, which can significantly improve system efficiency.

Series Frequency RMS Current Inductance DC Resistance

FP 1kHz - 2MHz 13A -110A 22nH – 950nH 0.05 mΩ - 0.65mΩ

HC 1kHz – 1MHz 11A – 78A 0.047uH – 10.5uH 0.24mΩ - 8.7mΩ

Inductors for High Frequency Power Applications

HC SeriesFP Series




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ATS High-Performance Cold Plates According to research published by SatCon1, The University of Kiel2 and Wolfspeed3, direct liquid cooling via cold plates is an effective way to cool SiC Power Modules. ATS cold plates have more than 30% better performance compared to other commercially-available cold plates. An internal, mini-channel fin structure enhances the surface area to maximize heat transfer with low pressure drop characteristics and provides uniform cold plate surface temperature. ATS cold plates can be quickly customized to fit different mounting configurations.

Part Number Dimensions (L x W x H) Flow Rate (L/min) ΔT @ 1kW between the cold plate base and inlet fluid temperature

ATS-CP-1000 202 x 130 x 20mm 4 L/min 5.50°C

ATS-CP-1001 198 x 147 x 20mm 4 L/min 5.00°C

ATS-CP-1002 162 x 136 x 20mm 4 L/min 7.00°C

ATS-CP-1003 162 x 147 x 20mm 4 L/min 6.80°C

ATS-CP-1004 162 x 172 x 20mm 4 L/min 5.90°C

Thermal Management

Standard and Custom Thermal SolutionsWakefield-Vette designs and manufactures a wide array of thermal management products, including extrusions, LED heat sinks, heat frames, heat pipes, fan assemblies, heat exchangers, coolant distribution units and liquid cold plates. This means Wakefield-Vette has the most complete thermal solution toolbox to solve customers’ heat density challenges. Standard and custom products are available to fit any need. Richardson RFPD stocks many standard extrusion profiles as well as rolled tube, exposed tube and full buried tube cold plates.

ExtrusionsBonded Fin Heat Pipes AssembliesCold Plates

607 Series219 Series

218 Series

3000 / 4000-series coldplates for Wolfspeed XM3, HM2 and 62mm modulesWieland-Microcool 3000 and 4000 series Friction Stir Welded coldplates have been optimized specifically for the high heat flux of silicon carbide power modules. The Micro Deformation Technology (MDT™) inside allows for the very low thermal resistance, low pressure drop, balanced parallel flow and is the coldplate of choice for Wolfspeed/Cree. The new 4000 series coldplates are thinner and can have cooling on both sides. Custom designs, internal nickel plating, fitting options, and MDT™ pin fin density options are all available with no tooling and quick lead times.

Part Number Dimensions (mm)

Fin Spacing (mm)

Module Compatibility # of Modules Thermal Res @ 24L/min FR (C/W)

CP3012-STD 100 x 195 x 25.5 1 XM3 (CABxxxM12XM3) 3 0.007

CP3012-XP 100 x 195 x 25.5 0.5 XM3 (CABxxxM12XM3) 3 0.006

CP3009-STD 130 x 225 x 25.5 1 62mm / CAS325M12HM2 3 0.007

CP3009-XP 130 x 225 x 25.5 0.5 62mm / CAS325M12HM2 3 0.006

CP4012-STD 90 x 180 x 20 1 XM3 (CABxxxM12XM3) 3 0.007

CP4012-XP 90 x 180 x 20 0.5 XM3 (CABxxxM12XM3) 3 0.006

CP4012D-STD 90 x 180 x 22 1 XM3 (CABxxxM12XM3) 6 (Double sided) 0.004

CP4012D-XP 90 x 180 x 22 0.5 XM3 (CABxxxM12XM3) 6 (Double sided) 0.003

CP4009-STD 130 x 225 x 20 1 62mm / CAS325M12HM2 3 0.007

CP4009-XP 130 x 225 x 20 0.5 62mm / CAS325M12HM2 3 0.006

CP4009D-STD 130 x 225 x 22 1 62mm / CAS325M12HM2 6 (Double sided) 0.004

CP4009D-XP 130 x 225 x 22 0.5 62mm / CAS325M12HM2 6 (Double sided) 0.003

CP4009 CP4009D CP4012D CP4012CP3009

CP3012



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GaN-on-Si E-HEMT Evaluation Platforms and Reference Designs

Part Number: GS61004B-EVBCD Full-Bridge amp using GS61004B 100V, 15mΩ andpSemi PE29102 high speed gate driver.

Part Number: GS665MB-EVB 650V universal motherboard for GS665XXX-EVBDB.

Part Number: GS66508B-EVBDB11.5kW Half bridge daughter board.Part Number: GS66508T-EVBDB2 2kW Half bridge daughter board.Part Number: GS66516T-EVBDB2 2.5kW Half bridge daughter board.

Part Number: GS61008P-EVBHF Half bridge using GS61008P 100V, 7mΩ andpSemi PE29101 high speed gate driver.

Part Number: GS665BTP-REF* 3kW High 99% efficiency bridgeless totem pole PFC using GS66516T 650V, 25mΩ. Vin: 176 - 264Vrms • Vout: 400VDC*No hardware. Documentation only.

Part Number: GSP65R25HB-EVB 1-3kW half bridge IMS using GS66516B 650V, 25mΩ.

Part Number: GSP65R13HB-EVB 4-6kW half bridge IMS using 2x GS66516B 650V, 25mΩ (13mΩ).

Part Number: GSP65MB-EVB Motherboard for GSP65R13HB-EVB and GSP65R25HB-EVB.

Part Number: GSWP050W-EVBPA50W Wireless Power Transfer (WPT) amp using GS61004B 100V, 15mΩ device and PE29102 gate driver from pSemi.Part Number: GSWP100W-EVBPA 100W WPT amp using GS61008P 100V, 7mΩ device and PE29102 gate driver from pSemi.Part Number: GSWP300W-EVBPA300W WPT amp using GS66508B 650V, 50mΩ device and PE29102 gate driver from pSemi.

50W, 100W and 300W amps for wireless power transfer/charging applications. Push-pull class EF2 topology, operating at 6.78MHz, 90% peak efficiency.

Reference Design

Part Number: MSCSICPFC/REF5* For qualified opportunities. Reference design files only, no hardware.30kW Vienna PFC Reference Design using Microsemi Next Generation SiC diodes and MOSFETs.Vin: 380/400Vrms, 3-Phase • Vout: 780VDC

*No hardware. Documentation only.

Part Number: GSWPT-EVBSKY SkyCurrent IIITM Charging Pad dual-mode charging pad supports both AirFuel’s Magnetic Resonant (MR) and WPC’s Qi charging standard.

Part Number: GSP66516HB-EVBIMS2 6kW High power half-bridge IMS2 using GS66516B, 650V, 25mΩ device.

Part Number: GSP66508HB-EVBIMS2 3kW High power half-bridge IMS2 using GS66508B, 650V, 50mΩ device.

Part Number: GSP665HPMB-EVBIMS2 3-12kW High Power Full Bridge evaluation platform mother board for GSP66508HB-EVBIMS2 and GSP66516HB-EVBIMS2.

Part Number: GS65011-EVBEZ EZDrive™ Open Loop Boost Evaluation Board. A low-cost, easy way to implement a GaN driving circuit using a standard MOSFET controller with integrated driver. Adaptable to any power level, any frequency, and any LLC and PFC controller.

Part Number: GS1200BTP-EVB 1.2kW High 99% efficiency Bridgeless Totem Pole PFC Eval Board using GS66508B 650V, 50mΩ.Vin: 85 – 264Vrms • Vout: 240VDC • Fmax: 100kHz

Part Number: GS-EVB-ACDC-300W-ON Ultra high power density 300W PFC/LLC Evaluation Boardusing GS66504B 650V, 100mΩ. Vin: 85-264Vrms • Vout: 19VDC

Part Number: GS-EVB-AUD-BUNDLE1-GS High performance 75-250W Class D Audio Amplifier + companion SMPSAmp uses GS61008P 100V, 7mΩ. SMPS uses GS66506T 650V, 67mΩ.

Part Number: GS-EVB-HB-66508B-ON1 Fully functional Half-Bridge using GS66508B 650V, 50mΩ and ON-Semi NCP51820 high-speed gate driver.




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SiC Evaluation Platforms and Reference Designs

Part Number: CRD-5FF0912P High-frequency, flexible half bridge configurationusing C3M0120090J.

Part Number: KIT8020-CRD-8FF1217P-1 Half bridge eval kit using C2M0080120D.

Part Number: CRD-060DD17P-2 48W Aux power supply using C2M1000170J. Vin: 300 – 1000VDC • Vout : 12VDC/4A, 12VDC/0.1A

Part Number: KIT8020-CRD-5FF0917P-2 Half bridge eval board using C3M0075120K.

Part Number: CRD-20DD09P-2* 20kW full bridge resonant LLC using C3M0065100K. Vin: 650 - 750VDC • Vout: 300 - 550VDC • Iout : 35A

Part Number: CRD-02AD09N* 2.2kW, 98.5% efficiency Bridgeless Totem Pole PFC using C3M0065090J. Vin: 180 - 264Vrms • Vout: 400VDC

Part Number: CRD-06600FF10N* 6.6kW Bi-directional EV on-board charger. using C3M0065100K.Vin: 176 - 264Vrms • Vout: 400VDC

Part Number: CRD-15DD17P 15W wide input aux supply using C2M1000170J.Vin: 300 – 1200VDC or 480 – 530VAC • Vout: 12VDC

Part Number: CRD-60DD12N* 60kW 4-phase interleaved boost using C3M0075120K.Vin: 470 – 800VDC • Vout: 850VDC

Part Number: CRD300DA12E-XM3 300kW three-phase inverter using CAB450M12XM3 module, CGD12HBXMP gate driver and CP3012-XP high performance cold plate.Vin: 800 – 900VDC • Vout: 480Vrms • Fmax: 80kHz

Part Number: KIT-CRD-3DD12P 2.5kW Buck Boost evaluation kit using C3M0075120K 4-lead and layout to accommodate TO-247 3-lead as well. Kit also allows TO-247 and TO-220 packaged diodes.Boost- Vin: 400VDC • Vout: 800VDC • Fmax: 100kHzBuck- Vin: 800VDC • Vout: 400VDC • Fmax: 100kHz

Note: *No hardware. Documentation only.

Part Number: KIT-CRD-CIL12N-XM3 XM3 half-bridge module dynamic evaluation board.Clamped inductive load (CIL) test fixture designed to accurately measure the voltage and current waveforms of CAB450M12XM3 power module.

Part Number: CRD250DA12E-XM3 250kW three-phase inverter using CAB425M12XM3module, CGD12HBXMP gate driver and CP3012-XPhigh performance cold plate. Vin: 800 – 900VDC • Vout: 480Vrms • Fmax: 80kHz

Part Number: CRD200DA12E-XM3 200kW three-phase inverter using CAB400M12XM3module, CGD12HBXMP gate driver and CP3012-XPhigh performance cold plate. Vin: 800 – 900VDC • Vout: 480Vrms • Fmax: 80kHz

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