SiC-Based Materials and Devices Enabling Electrification ...€¦ · 2020-05-29  · SiC and GaN...

9
Copyright 2020, II-VI Incorporated. All rights reserved. SiC-Based Materials and Devices Enabling Electrification and Mobility at Scale May 29, 2020

Transcript of SiC-Based Materials and Devices Enabling Electrification ...€¦ · 2020-05-29  · SiC and GaN...

Page 1: SiC-Based Materials and Devices Enabling Electrification ...€¦ · 2020-05-29  · SiC and GaN II-VI will be a key enabler of SiC and GaN compound semiconductor technology nodes

Copyright 2020, II-VI Incorporated. All rights reserved.

SiC-Based Materials and Devices Enabling Electrification and Mobility at Scale

May 29, 2020

Page 2: SiC-Based Materials and Devices Enabling Electrification ...€¦ · 2020-05-29  · SiC and GaN II-VI will be a key enabler of SiC and GaN compound semiconductor technology nodes

Page 2Copyright 2020, II-VI Incorporated. All rights reserved.

II-VI Incorporated Q3 FY2020 Overview

18Countries

69Locations

22,000+Employees

$388MCash and Equivalents

$627MRevenue

$120M YTDCash Flow from Operations

11%

68%

Revenue by

End Markets

5% Semi. Cap. Equip.

2% Life Science

6% Consumer Electronics

1% Other

7% Military

Revenue by

Regions

49%

21%20%

8%3%

“TWO SIX”Refers to groups II and VI

of the Periodic Table of Elements

Core Competency:ENGINEERED MATERIALS

Page 3: SiC-Based Materials and Devices Enabling Electrification ...€¦ · 2020-05-29  · SiC and GaN II-VI will be a key enabler of SiC and GaN compound semiconductor technology nodes

Page 3Copyright 2020, II-VI Incorporated. All rights reserved.

Core Strategy

Diversified per Platform

Capital Intensive

Markets

▪ A Leader in engineered materials and optoelectronic devices

▪ Differentiated lasers, optics, andintegrated circuits

▪ Enabling the convergence ofcommunications, computing, and sensing

Infrastructure

Core Competency Innovation Strategy

Engineered MaterialsDifferentiation

Valued By CustomersPerformance

Process IntensiveProducts

Page 4: SiC-Based Materials and Devices Enabling Electrification ...€¦ · 2020-05-29  · SiC and GaN II-VI will be a key enabler of SiC and GaN compound semiconductor technology nodes

Page 4Copyright 2020, II-VI Incorporated. All rights reserved.

Aerospace & DefenseRF and Power ElectronicsOptical Communications 3D Sensing & LiDAR

$7.5BCY25

Market

For 3D sensing in consumer electronics & LiDAR in

automotive

For terrestrial, undersea, wireless optical infrastructure

and datacenters

14%CY20-25

CAGR

$6.2B

For electric vehicles, smart power grids and 4G/5G RF

antennas

24%

For F35, contested space, directed energy and

hypersonics

$22B

24%

GaAs | InP | LCoS GaAs | InP GaAs | Sapphire

Source: Ovum, LightCounting, Cignal AI, Internal Estimates

$2.6B

15%

SiC | GaN/SiC | Diamond

Addressing Multiple Strong and Growing Markets

Source: Morgan Stanley, Forbes, Yole, IDC

Source: Yole, Strategy Analytics, LightCounting (includes devices)

Source: Internal estimates

Updated on 4/9/2020

Page 5: SiC-Based Materials and Devices Enabling Electrification ...€¦ · 2020-05-29  · SiC and GaN II-VI will be a key enabler of SiC and GaN compound semiconductor technology nodes

Page 5Copyright 2020, II-VI Incorporated. All rights reserved.

Easton, PA, USASiC Substrates (RF and Power)• Crystal growth

• Ongoing Expansion

• > 250K sq.ft. space

Strategic Compound Semiconductor Platforms:SiC and GaN

II-VI will be a key enabler of SiC and GaN compound semiconductor technology nodes▪ Leading technology, vertical integration, scalable 150mm platform, supply chain security▪ 5G wireless, green energy, EV/HEV

Pine Brook, NJ, USASiC Substrates (RF and Power)• R&D

• Crystal growth

• Slicing

Champaign, IL, USAGaN and SiC EpiWafers• GaN/SiC RF

• SiC/SiC Power

• Ongoing Expansion

Starkville, MS, USABack End SiC Wafer Processing• Polish

• Clean

• Characterize

• Ship

• RF & Power Market

Warren, NJ, USA

RF GaN/SiC Devices• GaN/SiC RF HEMT’s

Page 6: SiC-Based Materials and Devices Enabling Electrification ...€¦ · 2020-05-29  · SiC and GaN II-VI will be a key enabler of SiC and GaN compound semiconductor technology nodes

Page 6Copyright 2020, II-VI Incorporated. All rights reserved.

II-VI SiC Diameter Expansion Timeline

Advantages of Large Diameter Substrates

▪ Large diameter substrate fabrication cost (per unit area) is reduced significantly

▪ Large diameter wafer availability has helped move SiC-based devices from niche to mainstream

▪ Existing 200 mm silicon wafer fab lines can be used for SiC devices manufacturing

2’’ WaferManufacturing

3’’ WaferManufacturing

100 mm Wafer

Demonstrated

High Quality Wafer

Manufacturing

150 mm WaferDemonstrated

Manufacturing

02 03 04 05 06 07 08 09 10 11 12 13 14 15 16 17 18 19

World First200 mm WaferDemonstrated

4H n-Type 6H SI

Major Capacity Expansion

Page 7: SiC-Based Materials and Devices Enabling Electrification ...€¦ · 2020-05-29  · SiC and GaN II-VI will be a key enabler of SiC and GaN compound semiconductor technology nodes

Page 7Copyright 2020, II-VI Incorporated. All rights reserved.

SiC Manufacturing Capacity Expansion

Rel

ativ

e Q

uan

tity

of

Sub

stra

tes

Doubled Capacity

Every 18-24 Months

Actual Projected

Calendar Year

5-10x Capacity Increase

Over the Next 5 Years

Page 8: SiC-Based Materials and Devices Enabling Electrification ...€¦ · 2020-05-29  · SiC and GaN II-VI will be a key enabler of SiC and GaN compound semiconductor technology nodes

Page 8Copyright 2020, II-VI Incorporated. All rights reserved.

Remote Radio HeadBeam-forming Antenna

5GWIRELESS

4GWIRELESSBi-Directional Converter/ Inverter/ Electric Motor

DC-DC Converter Electric Charger / HV Battery

Enabling Electrification & Mobility

EV/HEV

GREEN ENERGYSolar & Wind Energy

Smart Grid Power Switching

Ramping silicon carbide substrate capacity 5-10x over the next 5 years

▪ 100, 150 mm diameter conductive substrates▪ 2015: World’s first 200 mm conductive substrates▪ For SiC MOSFETs power devices▪ About 10% more driving distance on the same charge

POWER ELECTRONICS FOR ELECTRIC VEHICLES

▪ 100, 150 mm diameter semi-insulating substrates▪ 2019: Word’s first 200 mm semi-insulating substrates ▪ For SiC-based GaN HEMT devices▪ GaN/SiC enables high-bandwidth 5G bands

RF ELECTRONICS FOR WIRELESS BASE STATIONS

Page 9: SiC-Based Materials and Devices Enabling Electrification ...€¦ · 2020-05-29  · SiC and GaN II-VI will be a key enabler of SiC and GaN compound semiconductor technology nodes

Design Considerations for High Frequency Magnetic Materials · Markets for GaN and SiC •GaN + SiC likely to reach ~$10B by 20271 –GaN is expected to achieve price parity with

Design Considerations for High Frequency Magnetic Materials · Markets for GaN and SiC •GaN + SiC likely to reach ~$10B by 20271 –GaN is expected to achieve price parity with

Outstanding quality Gallium Nitride (GaN) – enabler for new industries

Outstanding quality Gallium Nitride (GaN) – enabler for new industries

Designing with SiC & GaN devices with Emphasis on …...EPE 2018, 17–21 September 2018, Riga, Latvia Designing with Si to SiC & GaN devices including Safety & EMC considerations

Designing with SiC & GaN devices with Emphasis on …...EPE 2018, 17–21 September 2018, Riga, Latvia Designing with Si to SiC & GaN devices including Safety & EMC considerations

Effects of surface oxide on wafer bonding of GaN and SiC

Effects of surface oxide on wafer bonding of GaN and SiC

Commercialization of SiC and GaN Power Devices · 2018. 5. 14. · Adv. Energy Conference March 24, 2018 T.P. Chow Commercialization of SiC and GaN Power Devices. T. Paul Chow. Rensselaer

Commercialization of SiC and GaN Power Devices · 2018. 5. 14. · Adv. Energy Conference March 24, 2018 T.P. Chow Commercialization of SiC and GaN Power Devices. T. Paul Chow. Rensselaer

GaN and SiC for power electronics applications 2015 Report by Yole Developpement

GaN and SiC for power electronics applications 2015 Report by Yole Developpement

Update on GaN and SiC Activities Within JEDEC JC … Update on...1 of 26 Update on GaN and SiC Activities Within JEDEC JC-70 Committee Jeffrey Casady, Wolfspeed, JEDEC JC-70.2 Chair

Update on GaN and SiC Activities Within JEDEC JC … Update on...1 of 26 Update on GaN and SiC Activities Within JEDEC JC-70 Committee Jeffrey Casady, Wolfspeed, JEDEC JC-70.2 Chair

A Review of GaN on SiC High Electron-Mobility Power Transistors

A Review of GaN on SiC High Electron-Mobility Power Transistors

The Little Box Challenge Ultra-Compact GaN- or SiC-Based ... · Ultra-Compact GaN- or SiC-Based . ... PFC Rectifier Topology. ... Accurate Measurement of ZVS Losses Using Calorimetric

The Little Box Challenge Ultra-Compact GaN- or SiC-Based ... · Ultra-Compact GaN- or SiC-Based . ... PFC Rectifier Topology. ... Accurate Measurement of ZVS Losses Using Calorimetric

Wide Band-Gap Semiconductors GaN &SIC

Wide Band-Gap Semiconductors GaN &SIC

Channel Temperature Determination for AlGaN/GaN · PDF fileChannel Temperature Determination for AlGaN/GaN HEMTs on SiC and Sapphire ... Channel Temperature Determination for AlGaN/GaN

Channel Temperature Determination for AlGaN/GaN · PDF fileChannel Temperature Determination for AlGaN/GaN HEMTs on SiC and Sapphire ... Channel Temperature Determination for AlGaN/GaN

RF Power GaN on SiC Transistor Depletion Mode …cache.nxp.com/files/rf_if/doc/data_sheet/MMRF5015N.pdfMMRF5015N 1 RF Device Data Freescale Semiconductor, Inc. RF Power GaN on SiC

RF Power GaN on SiC Transistor Depletion Mode …cache.nxp.com/files/rf_if/doc/data_sheet/MMRF5015N.pdfMMRF5015N 1 RF Device Data Freescale Semiconductor, Inc. RF Power GaN on SiC

Growth of GaN on porous SiC by molecular beam epitaxy · Growth of GaN on porous SiC by molecular beam epitaxy ... complicated process. ... MBE, compared to CVD, ...

Growth of GaN on porous SiC by molecular beam epitaxy · Growth of GaN on porous SiC by molecular beam epitaxy ... complicated process. ... MBE, compared to CVD, ...

RF Power GaN on SiC Transistor Depletion Mode … Power GaN on SiC Transistor Depletion Mode HEMT ... L2 17.5 nH Inductor, ... 0 80 η D, DRAINEFFICIENCY (%) 40 16 32 48 64

RF Power GaN on SiC Transistor Depletion Mode … Power GaN on SiC Transistor Depletion Mode HEMT ... L2 17.5 nH Inductor, ... 0 80 η D, DRAINEFFICIENCY (%) 40 16 32 48 64

Wide band gap, (GaN, SiC etc.) device evaluation with the ...Source: Yole Development, 2009 Source: Yole Development, 2012 SiC devices GaN devices 4 times better thermal conductivity

Wide band gap, (GaN, SiC etc.) device evaluation with the ...Source: Yole Development, 2009 Source: Yole Development, 2012 SiC devices GaN devices 4 times better thermal conductivity

Wide Bandgap (SiC/GaN) Power Devices Characterization and ...

Wide Bandgap (SiC/GaN) Power Devices Characterization and ...

Future SiC/GaN Variable Speed Drive Inverter Topologies

Future SiC/GaN Variable Speed Drive Inverter Topologies

Applying SiC and GaN to high-frequency power - TI.com · Applying SiC and GaN to high-frequency power Rais Miftakhutdinov Systems Architect High Voltage Power Solutions John Rice

Applying SiC and GaN to high-frequency power - TI.com · Applying SiC and GaN to high-frequency power Rais Miftakhutdinov Systems Architect High Voltage Power Solutions John Rice

Char Act. of GaN SiC

Char Act. of GaN SiC

A Review of GaN on SiC High Electron-Mobility Power Transistors ...

A Review of GaN on SiC High Electron-Mobility Power Transistors ...