Designing with SiC & GaN devices with Emphasis on …...EPE 2018, 17–21 September 2018, Riga,...
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EPE 2018, 17–21 September 2018, Riga, Latvia Designing with Si to SiC & GaN devices including Safety & EMC considerations 1 Designing with SiC & GaN devices with Emphasis on EMC & Safety considerations Dr. Supratim Basu, Prof. Tore Undeland & Prof. Jorma Kyyrä Seminar Presentation Time: Full day Seminar Presentation Abstract: The ability of WBG devices to switch very fast, have negligible switching losses and also low on-state losses at high voltages greater than 600 V, etc, makes them near an ideal switch. While Practical Power Electronics design has never been something straightforward, realizing converters having high power densities at lowest cost, stringent EMI and safety requirements and high efficiency at both full/light load, makes their design even more challenging. Thus good design practice and in depth technical knowledge of power-electronics design, thermal design, failure modes, designing for immunity to noise, control system design, conservative PCB layout, wiring and grounding issues, etc., is the key to success in designing with SiC & GaN components. This intermediate to advanced level course will begin with a refresh on SiC components followed by an in-depth treatment of various topics like switching speed considerations, EMI generation and management, PCB layout, control loop noise susceptibility, ground loops etc. Lastly the focus of this presentation is to present everything with as many practical engineering examples as possible and thus have a mix of both practice and theoretical explanations and not focus on only theory or physics. Presenting Speakers and Affiliations: Corresponding Presenter Non-Corresponding Presenter Dr. Supratim Basu BOSE RESEARCH PVT. LTD. #1, KVC Complex, 5th Main, R.M.V.– 2nd Stage, Bangalore 560 094, India Tel.: +91 80 2341 9658E- Mail: [email protected] Prof. Tore. M. Undeland NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY Dept. of Electrical Power Engineering, Trondheim, Norway Tel.:+47 73 59 42 44, Mail: [email protected] Prof. Jorma Kyyrä ALTO UNIVERSITY Department of Electrical Engineering and Automation, Helsinki, Finland Tel.:+358 50 563 9146 Mail: [email protected]
Transcript of Designing with SiC & GaN devices with Emphasis on …...EPE 2018, 17–21 September 2018, Riga,...
EPE 2018, 17–21 September 2018, Riga, Latvia
Designing with Si to SiC & GaN devices including Safety & EMC considerations
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Designing with SiC & GaN devices
with Emphasis on EMC & Safety considerations
Dr. Supratim Basu, Prof. Tore Undeland & Prof.
Jorma Kyyrä
Seminar Presentation Time: Full day
Seminar Presentation Abstract: The ability of WBG devices to switch very fast, have negligible switching losses and also low on-state losses at high voltages greater than 600 V, etc, makes them near an ideal switch. While Practical Power Electronics design has never been something straightforward, realizing converters having high power densities at lowest cost, stringent EMI and safety requirements and high efficiency at both full/light load, makes their design even more challenging. Thus good design practice and in depth technical knowledge of power-electronics design, thermal design, failure modes, designing for immunity to noise, control system design, conservative PCB layout, wiring and grounding issues, etc., is the key to success in designing with SiC & GaN components. This intermediate to advanced level course will begin with a refresh on SiC components followed by an in-depth treatment of various topics like switching speed considerations, EMI generation and management, PCB layout, control loop noise susceptibility, ground loops etc. Lastly the focus of this presentation is to present everything with as many practical engineering examples as possible and thus have a mix of both practice and theoretical explanations and not focus on only theory or physics. Presenting Speakers and Affiliations: Corresponding Presenter Non-Corresponding Presenter
Dr. Supratim Basu BOSE RESEARCH PVT. LTD.
#1, KVC Complex, 5th Main, R.M.V.– 2nd Stage,
Bangalore 560 094, India Tel.: +91 80 2341 9658E-
Mail: [email protected]
Prof. Tore. M. Undeland NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY
Dept. of Electrical Power Engineering, Trondheim, Norway
Tel.:+47 73 59 42 44, Mail: [email protected]
Prof. Jorma Kyyrä ALTO UNIVERSITY
Department of Electrical Engineering and Automation, Helsinki, Finland
Tel.:+358 50 563 9146 Mail: [email protected]
EPE 2018, 17–21 September 2018, Riga, Latvia
Designing with Si to SiC & GaN devices including Safety & EMC considerations
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Tutorial-Part 1
Introduction and Overview
Si and WBG-An Introduction.
●ThePhysicsofWBGsemiconductors●WhySiC●WhyGaN●ComparisonbetweenSiandSiC/GaN●TheSiCDiode●NormallyonandNormallyoffdevices●TheSiCtransistor●TheSiCMOSFET●GaNdevices●Commercialavailabilitytoday.
Overview of Important Power Electronics Components.
● Components: Capacitors, Resistors, Inductors, transformers ● Components: Diodes,Zeners Components: Magnetics ● Understanding & Designing with resistors ●Understanding & Designing with capacitors ● Understanding & Designing with magneticcomponents ● Leakage inductance & Inter-winding Capacitance ● Driving inductivecomponents.
Understanding WBG Design Considerations
Design considerations for WBG switches. ●Switching speedofWBGdevices●Parasitic oscillations● Inductance-a baneor boon●Parasitic oscillations ● Switching and conduction losses of SiC devices ● Driving SiCFETS/Transistors optimally ● SiC Driver Circuits ● GaN devices ● GaN Driver Circuits ●Switching and conduction lossesofGaNdevices●DrivingGaNFETSoptimally●CommoncausesofWBGDeviceFailures●ThermalConsiderations●MountingofSiC&GaNdevices●Importantsafetyconsiderations●Overtemperatureprotection●OvercurrentprotectionofSiCswitches●OvervoltageprotectionofSiCcomponents●OvercurrentprotectionofGaNswitches●OvervoltageprotectionofGaNdevices.
Practical Design Considerations
Circuit design, ringing, grounding issues, etc. with SiC & GaN devices
DrivercircuitdesignforSiC&GaNdevices●Understandingtransients,circuitprotection&ESD●Circuitparasiticelements,ringinganddampingwithSiC&GaNdevices●ControllingswitchingspeedofSiC&GaNdevices●ReducingcircuitinductanceforswitchingSiC&GaNdevices ● Passive& regenerative snubber circuits ● Ferrite Beads ● Kelvin connections ●UsingICs●Generationofnoise,coupling&itsmanagement●Instabilitiescausedbynoise.
EPE 2018, 17–21 September 2018, Riga, Latvia
Designing with Si to SiC & GaN devices including Safety & EMC considerations
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Tutorial-Part 2
PCB & Safety Considerations, EMC Management, etc.
PCB Layout issues.
● Thermal considerations of SiC & GaN SMD power semiconductors ● Inductanceconsiderationsof SiC&GaN SMDpower semiconductors●Kelvin connections●Shieldingand noise guards for sensitive signals ● Grounding considerations and ground planes ●Understandingandplacingdecouplingcapacitors●Reducingheatingofcapacitors●NeedformultiplePTHs●Placementofheatgeneratingcomponents●Selectionof componentsbased on wave or reflow soldering ● Understanding generation of fields from PCB ●IdentifyingtrackswithhighdV/dtandhighdI/dt.●E fieldandBfieldcoupling● Shortesttracklengthandbalancingswitchingcurrentsconsiderations●Understandingsignificanceofresistance, inductance,mutual capacitive coupling andmutual inductancewith other PCBtraces as PCB traces are not perfect equi-potential conductors ● Influence of PCB traceinductance on ringing, voltage spikes, switching loss and associated EMI. ● Managingswitching speed of SiC & GaN devices ● Good converter design always has low highfrequency ringing emissions without the need for a slow switching speed or significantsnubber dissipation ● Internal circuit ground node is never at zero potential causingcirculating ground loop currents ● Minimizing coupling of signals and fields by propercomponentplacement●Multi-layerPCBs.
Overview of EMI management. Design of Practical Filters.
●NoiseCouplingModes andpaths forSiC&GaNapplications●Electrostatic&Magneticcoupling ● Common & Differential Mode Noise ● Ground plane, grounding and highfrequency current paths ● Electric & Magnetic Field Noise Emissions for SiC & GaNapplications●EmissionsfromhighdV/dtsurfacesandremedies●Heat-sinksandcommonmodecurrents●Heat-sinktodevicecapacitance,Heat-sinkshields●InfluenceofhighspeedswitchingofSiC&GaNcomponentsonCommonModecurrentsthroughtransformerinter-winding capacitances ● Transformer Shields and Flux Straps ● dI/dt Current loops andradiatedmagnetic field ● RadiatedMagnetic Fields fromMagnetic Circuits ● How noisecurrentflowcancontributetoEMI●RelevanceofswitchingspeedofSiC&GaNdevicesonEMI●ConductorsactasAntennasastheycarrynoisecurrent●Improperearthingorhighearth resistance significantly increases EMI ● Safety Capacitors and Leakage currents ● AtypicalEMIfilterandhowitworks●MitigatingRadiationcouplingtofilters●ShieldingEMIfiltersandtheirimportance●PlacementofEMIfiltersandinfluenceonPCBBoardLayout.
Safety Considerations.
●Singlefaultconsiderations●Creepage/clearencedistances●SafetyCapacitors●Residualvoltages●Insulation●SELV●RMSvoltageconsiderations.
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Designing with Si to SiC & GaN devices including Safety & EMC considerations
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End of Tutorial Presentation Biography of Presenting Speakers and Authors:
Supratim Basu received the B.E. degree in electrical and electronics
engineering from BIT, Mesra, India, in 1988 and the M.Tech. degree from
Indian Institute of Science, Bangalore, India, in 1992 & Ph.D. degree from
Chalmers University of Technology, Göteborg, Sweden in 2006.
He has published many papers, presented many lectures in many universities &
industries in Europe & India and presented many Seminars in IEEE & EPE conferences on Power
Electronics design. His current research interests are power electronics applications and EMI and
has independently developed many converters and inverters. Presently he is managing director at
Bose Research Pvt. Ltd, Bangalore, India and heads a research and development team of sixteen
power electronics engineers. He also works as an independent power electronics consultant for
many companies around the world.
Tore M. Undeland (M’86, SM’92, F’00) is Professor of power electronics at
the Norwegian University of Science and Technology, Trondheim, Norway. He
has been teaching since 1972 and as a Professor since 1984. He has authored
many publications in the field of power converters, snubbers, and control in
power electronics. He is a coauthor of the book Power Electronics: Converters,
Applications, and Design (New York: Wiley, 2003).
Dr. Undeland was the chairman of the European Power Electronics and Drives Association (EPE)
1997 Conference, Trondheim, and is presently member of EPE. He is a Fellow of IEEE. For six
years he is a member of the AdCom, IEEE Power Electronics Society.
Prof. Jorma Kyyrä received M.Sc., Lic.Sc. and D.Sc. degrees from Helsinki
University of Technology (TKK), Helsinki, Finland, in 1987, 1991, and 1995,
respectively. He has worked at the university since 1985 in various positions-
Associate Professor of Power Electronics since 1996, Professor of Power
Electronics since 1998, Dean of the Faculty of Electronics, Communications
and Automation during 2008-2009, Vice President at Aalto during 2009-2011 and presently head
of the department of electrical engineering and automation at Aalto.
His research interest is power electronics at large. Power electronics group at Aalto University
has expertise e.g. in power electronics for ac drives, dc-dc converters, modeling of converters,
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filtering of EMI, power factor correction, distributed power systems and hybrid electric
vehicles. He has been lecturing a full semester course on EMI, for many years.
