PROCEEDINGS OF SPIE · and technical status of the critical mask industry. ... Taiwan Semiconductor...

PROCEEDINGS OF SPIE

SPIEDigitalLibrary.org/conference-proceedings-of-spie

Mask industry assessment trendanalysis: 2012

Chan, Y. David

Y. David Chan, "Mask industry assessment trend analysis: 2012," Proc. SPIE8352, 28th European Mask and Lithography Conference, 835203 (16 April2012); doi: 10.1117/12.923746

Event: 28th European Mask and Lithography Conference (EMLC 2012), 2012,Dresden, Germany

Downloaded From: https://www.spiedigitallibrary.org/conference-proceedings-of-spie on 31 Jul 2020 Terms of Use: https://www.spiedigitallibrary.org/terms-of-use

Mask Industry Assessment Trend Analysis: 2012 Y. David Chan

SEMATECH, 257 Fuller Road, Albany, USA 12203

ABSTRACT

Microelectronics industry leaders consistently cite the cost and cycle time of mask technology and mask supply among the top critical issues for lithography. A survey was designed by SEMATECH with input from semiconductor company mask technologists and merchant mask suppliers to objectively assess the overall conditions of the mask industry. With the continued support of the industry, this year’s assessment was the tenth in the current series of annual reports. This year’s survey is basically the same as the 2005 through 2011 surveys. Questions are grouped into six categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category is a multitude of questions that ultimately produce a detailed profile of both the business and technical status of the critical mask industry. We received data from 11 companies this year, which was a record high since the beginning of the series. The responding companies represented more than 96% of the volume shipped and about 90% of the 2011 revenue for the photomask industry. These survey reports are often used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. They will continue to serve as a valuable reference to identify strengths and opportunities. Results can also be used to guide future investments in critical path issues.

Keywords: Mask industry, photomask, industry, mask yield, photomask yield, mask quality, photomask quality

1. INTRODUCTION

SEMATECH reinitiated a survey of the mask industry in 2002, intending to enhance the level of understanding of the unique and critical issues associated with the photomask industry.1 It planned to conduct the survey annually to provide a substantial and valuable reference database. This database has been built over time to help identify past trends and validate future projections. A similar survey had been done annually for seven years but was suspended after 1999 for because of lack of financial support to conduct it. The results from those past surveys were published as SPIE papers and presented at BACUS, where they were found to provide valuable insights for both mask makers and mask users.2, 3 From 2002 to 2011, the survey questions remained essentially constant4-15. Questions are grouped into six categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Time, Returns, and Services. Within each category are multiple questions that provide a detailed profile of both the business and technical status of the mask industry.

2. ASSESSMENT APPROACH David Powell Consulting was the focal point for data collection. Participant identification markings were removed by them to make the raw data anonymous before the data were forwarded to the author. Data were requested from survey participants for the previous 12 months, from July 1 through June 30. The data were loaded into a spreadsheet and summarized for lowest, highest, and average values. Respondents received an Excel file with complete summary data for further analysis as an incentive for participation.

Invited Paper

28th European Mask and Lithography Conference, edited by Uwe F.W. Behringer,Wilhelm Maurer, Proc. of SPIE Vol. 8352, 835203 · © 2012 SPIE

CCC code: 0277-786X/12/$18 · doi: 10.1117/12.923746

Proc. of SPIE Vol. 8352 835203-1

Downloaded From: https://www.spiedigitallibrary.org/conference-proceedings-of-spie on 31 Jul 2020Terms of Use: https://www.spiedigitallibrary.org/terms-of-use

The survey participants by years can be seen in the table below.

Table 1 – Participants by year

Description of survey sections:

1. General Mask Profile Information This section seeks to establish a general description of the basic elements of the mask business: technology groundrule categories; application types (logic, memory, microprocessors, etc.); mask types by glass size (PSM, binary, OPC); magnification distribution; and distribution of fabrication methods used for patterning. The type of pellicle is also included.

2. Data Processing This section requests data on file size and data preparation time average, maximum, and 95th percentile of each respondent’s distribution. For the fifth time, write time data were gathered. The 95th percentile is requested to help discern what file sizes and write times are truly representative of the norm without having extraordinarily large, anomalous files over weighted in the analysis.

3. Yields and Yield Loss Mechanisms Overall yield by glass size and mask type (binary, phase-shifting method) is given. Fifteen yield loss mechanisms are offered to generate an industry Pareto chart. Binary and phase shift mask losses were separated since the 2007 survey.

4. Delivery Time Data on average delivery time and time for the first three layers of a new mask set are collected by four different mask type categories: binary, binary with moderate to aggressive optical proximity correction (OPC), attenuated, and alternating phase shift masks Note: Attenuated phase shift masks are also known as embedded phase shift masks or half-tone phase shift masks. Alternating phase shift masks are also known as strong phase shift masks or hard shifted masks.

5. Mask Returns This section collects data on mask returns according to nine categories.

6. Mask Service “Mask maintenance” services are divided into eight service categories.

Participants 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011Advanced Mask Technology Center YES W/Toppan W/Toppan YES YES YESCompugraphics International Ltd YES YES YES YES YES YES YES YES YES YESDai Nippon Printing YES YES YES YES YES YES YES YES YES YESToppan Photomasks Inc/DuPont Photomasks Inc YES YES YES W/Toppan W/Toppan W/Toppan W/Toppan W/Toppan W/Toppan W/Toppan

Hoya YES YES YES YES YES YES YES YESHynix YES YESIBM YES YES YESIntel Mask Operation YES YES YES YES YES YES YES YES YES YESMicron Technology Mask Shop YESPhotronics Inc YES YES YES YES YESSamsung YESSemiconductor Manufacturing International Company (SMIC) YES YES YES YES YES YESTaiwan Mask Shop (TMC) YES YES YES YES YES YES YES YES YESToppan Printing YES YES YES YES YES YES YES YES YESTaiwan Semiconductor Manufacturing Company, Ltd. (TSMC) YES YES YES YES YES YES YES YES YES YES

Total Respondents 7 10 10 8 9 8 9 9 10 11



NOTE: Comof the overallappropriate, respondents. averages by r

1. General

MasDesadvaindienco

Logto odeclchipsust

mparisons amonl industry (as sthe results froGraphs with

response for al

Mask Profile I

sk volume for pite the economancement. Theicating a numbouraged many

gic designs are our endless appline while the mp (SOC) produtained.

ng the surveys seen in Table 1om the 2003 to

2002* have dll years.

Information

the < 45 nm mic turmoil in

ere were also sber of relevanproducts and a

still driving thpetite for mobimicroprocessoct percentages

3may not be tot

1). In addition,o 2011 surveysdata that are v

nodes increasn 2008 and 200significant incrnt products at application inn

he majority of tile application

or suffered a sigremained stab

3. DATA tally accurate snot all particip

s have been vovolume-weight

sed at an appr09, the high-endreases in mask

the mature novations with t

the mask volums. The memorygnificant declin

ble. More data

since the survepants answeredolume-weighteted except for

roximate growd device makevolume for th

nodes. The ecothe mature tech

me. The devicey percentage ine in 2011. Thpoints are nee

eys represent a d every questioed. All 2002 re2002. Charts

wth rate of 70%rs continue the

he ≥ 250 nm nonomic problehnology.

e landscape is s now trending

he RF/mixed sided to see whe

different crosson. Where possesults are averwith 2002 ar

% from 2007 eir investmentsode in 2010 anem in 2008 an

changing, perhg up after somignal and systeether the trend

s-section sible and raged by e simple

to 2011. s in node nd 2011, nd 2009

haps due me recent em-on-a-s will be



Morhas avaicoul

Thevolucert

re than 84% ofsteadily increailable.) The mald be indicative

e production phume has remaiain amount of

f photomasks aased. (Note: Thask volume fore that some old

hase-shifting mined very low.year-to-year fl

are currently mhe question wasr the 5X magnider generation

masks (PSMs). Attenuated mluctuations.

ade on the 602s asked differeification is abouwafer steppers

have been excmask type is st

25 format. Oveently in 2002; thut the same as s are beginning

clusively madetable ~10-12%

r the last five yherefore, no co4X for the firs

g to be retired.

e on 6-inch ma%. The particip

years, this percomparative datst time in 2011

asks. Alternatiant mix could

centage ta are . This

ing PSM d cause a



AggTheare toptimanand aggr

Pellcateseemnod

Thedeclrelat

gressive opticae no OPC categtwo possible eical exposure hnufactured usin

wavelength cressive OPC. M

licle usage seemegory. This coums to be upwae volume incre

e combined vollining in favorted to the incre

al proximity cogory also had axplanations: 1)has reached itng double patteconstant. Tran

More data poin

ms to remain fuld be an artif

ard trends for bease.

lumes for the rr of the high vease in ≥ 250 n

orrection (OPCa significant jum) year-to-year pts limit at 40 nerning as a waynsition from snts are needed t

flat over the yefact of the chanboth DUV and

raster spot e-bevoltage shapednm products.

C) was growingmp in 2011 aftparticipants vanm half-pitch y of extending single patternito see whether

ears with a twonge in the mixI-line pellicle

eam tools and td e-beam tools

g at a steady pter stabilizing aaried, and 2) ac

(hp)16. Todaythe half-pitch wing to DP mathe trends can

o-year higher thx of mask shop usage, which

the ≤ 50kV sha. Increase in t

pace until a sigat ~70% in fromccording to ITRy, 32 nm hp flwhile keeping ay temporarilybe sustained.

han normal usaps represented could directly

aped e-beam tothe usage of la

gnificant drop m 2007 to 201RS 2011 editiolash devices athe numerical

y provide reli

age in the “no by the survey

y result from ≥

ools have beenaser patterning

in 2011. 0. There n, single

are being aperture

ief from

pellicle” y. There 250 nm

n steadily g tools is



The volu2010. Threplace Ssubseque

The perc

increased

ume percentagehe reason for thSEM measuremently need to h

centages of died dramatically

es for optical mhe significant iments. More dhave a better br

:database and in 2011, perha

metrology toolsincrease in 201data points are nreakdown in th

die:die were esaps due to the i

s using < 300 n1 is not clear. needed to see wis category.

ssentially the sincrease in mul

nm wavelengthInnovative optwhether we hav

same from 2006lti devices/shu

h were stable frtical means couve a real trend.

6 through 2010uttle in wafer lo

rom 2006 throuuld be deploye. We may

0. The die:dataots.

ugh d to

abase



Theof resteadispbett

Desyear

e no repair percecord yield (se

adily increased proportionate iner see the trend

ign data file sirs of the survey

centage had beeee below) and t

from 2007 to 2ncrease in matud.

ze averages any. This represe

en stable from the mature tech2010 and then ure technology

nd 95th percentints a growth o

~35% to ~40%hnology volumdeclined slight

y volume than i

iles are increasf over 3X over

% with a big jume increase in 2

tly in 2011. Thin high-end vo

sing at a steadyr the last four y

mp in 2011. Th2011. The use ohis is more likelume. More da

y pace of 1.4X years.

his could be thof e-beam repaely due to the ata points are n

per year over t

he result air

needed to

the ten



Pattthe incrsigndata201

Datayear

Theover

terning write tim95th percentile

reasing consistnificantly (44%a volume in 201 did not incre

a preparation Crs.

e average yield r the last six ye

me has been ge represents thtently since 20

%). This might 10. Such a cha

ease.

CPU processin

for binary maears.

athered since 2he e-beam pat002, 2010 waimply that e-b

allenge may ha

ng times are sta

asks was at a re

2007. The avetterning write s the first yeabeam mask wrave subsequent

arting to increa

ecord high of 9

rage is dominatime. Even th

ar when the 9riters were nottly been resolve

ase again, but m

97.6% in 2011

ated by the lasehough the dat

95th percentilest able to keep ed as the 95th p

more data poin

. Yields have b

er patterning tota volumes has write time inup with the inpercentile write

nts are needed

been slowly in

ool while ave been ncreased

ncreasing e time in

in future

ncreasing



*Represenpaper by B

Thethre

Theaccoat abeneand

ts survey years (JuBrian Grenon.

e 6-inch PSM yee mask categor

e major procesount for more tabout 15%. Crefit from the fPSM losses.

uly to June). The 1

yields have geries in 2011.

ss-related yieldthan half of thritical dimensiofeed backward/

1995 to 1999 data

enerally increas

d loss mechanhe yield loss. Hon (CD) mean/forward proto

are any data avail

sed over the la

nisms are esseHuman errors (an-to-target is aocols often use

lable in the calend

ast four years.

entially constaadministrative always higher

ed in wafer fab

dar year reported i

Record yields

ant from year and manufactuthan uniform

bs. The chart b

in the 1999 BACU

s were achieve

to year. Harduring errors) a

mity and could below combine

US survey

ed for all

d defects are stable

perhaps es binary



Delidrivtimeas ccom

As e

ivery times varver for deliveryes. Both attenucompared to b

mplexity are inc

expected, the d

ry significantlyy times. OPC muated and alterbinary masks. creasing.

Deliv

delivery times f

y by the typesmasks take lon

rnating PSMs ta In general,

very Times

for the first thr

of masks. Expnger to manufaake longer becdelivery times

for First T

ree layers are b

perience anticifacture due to tcause of additios have been s

Three Laye

etter than the a

pates this as ththeir increasedonal lithographstable even th

rs

average deliver

he yields are thd complexity ahy and processihough the con

ry times.

he major and write ing steps

ntent and

Proc. of SPIE Vol. 8352 835203-10


Mashandrefin

sk maintenancedling procedurned as new cat

e service was rres may be neegories in futu

Average

required most oeeded. The “oture year’s surve

Delivery T

often for replather” category eys.

Times

acing damaged is growing at

pellicles. Retrt a significant

raining of in-fapace and nee

ab reticle eds to be

Proc. of SPIE Vol. 8352 835203-11


Whether248

We received responding cthe photomas

The economithe landscapeindicating a ntheir investmapproximate volume, the RF/mixed sigsustained.

Mask yields yield loss, co1.4X/year. Thand keep pacindustry segm

The authorsInternational ManufacturinManufacturinalso thank Dcontributions

Most importtechnical assi

en the 2011 phre is a strong d

nm and 100X

survey data frcompanies reprsk industry. Th

ic downturn froe of the photomnumber of rele

ments in shrinkgrowth rate omemory perc

gnal and SOC

for binary, EAost, and delivehe productivityce with growinments addresse

s heartily thaLtd., Dai N

ng Internationng Company, L

Dede Adams ats.

antly, we wouistance and gui

hoto-induced ddependence on

of 365 nm.

from 11 comparesented more his database pro

om 2008 to 20mask industry. evant and innoking feature sof 70% from 2centage is now

C products rem

APSM, and AAery time. Daty of e-beam wrng file sizes. Ded by each mas

ank the particNippon Printin

al Company (Ltd., for their st David Powell

uld like to thanidance provide

degradation sern exposure wav

4. COanies this year,than 96% of thovided a good

009 and our unMask volume

ovative productizes. The mas

2007 to 2011. w trending up

mains stable. M

APSM are at ata file sizes coriters must con

Data preparationsk maker.

ACKNOWcipating compng, Hoya, Hy(SMIC), Taiwspirit of cooperl Consulting, I

nk SEMATECed in the genera

rvice rates are velengths. The

ONCLUSION, which was a he mask volumunderstanding

nsatiated appetiincreased signts using the msk volume forWhile Logic

p and microprMore data poin

an all-time higontinue to incntinuously be imn times vary a

WLEDGEMEpanies, Advanynix, IBM, Inwan Mask Shoration in providInc. for her rol

CH and its memation of this pa

normalized wnormalized da

NS record high si

me shipped and of the state of

ite for mobile anificantly for th

mature nodes. Tr the < 45 nmdesigns are st

rocessors trendnts are needed

gh. Hard defectrease with themproved to ma

among respond

ENTS nced Mask Tntel Mask Opop, Toppan Prding this valuale in data colle

mber companiaper.

ith the percentamage rate for

ince the beginnd about 90% of the photomask

applications hahe ≥ 250 nm noThe high-end dm nodes contintill driving theding downward to see wheth

ts continue to e 95th percentiaintain the curr

dents, which m

Technology Ceeration, Photrrinting, and T

able data to theection and Gre

ies for their fu

tage of masks r 193 nm is 9X

ning of the serof the 2011 revk industry.

ave a lasting imodes in 2010 andevice makers nued to increae majority of trd. The percenher such trends

be the major ile at a growthrent level of w

may reflect the

enter, Compuronics, SemicoTaiwan Semicoe industry. Theeg Hughes for

unding support

shipped, X that of

ries. The venue for

mpact on nd 2011, continue

ase at an the mask ntage of s can be

factor in h rate of

write time different

ugraphics onductor onductor e authors

his past

t and the

Proc. of SPIE Vol. 8352 835203-12


REFERENCES 1. K.R. Kimmel, “A Mask Industry Assessment: 2002,” 22nd Annual Symposium on Photomask Technology and

Management BACUS, Proceedings of SPIE Vol. 4889 Part 1, pp. 1-14, 2002. 2. B.J. Grenon, “1999 Mask Industry Quality Assessment,” 15th Annual Symposium on Photomask Technology and

Management BACUS, Proceedings of SPIE Vol. 3873, pp. 162-174, 1999. 3. E. Gonzalez-La’O, “1998 Mask Industry Quality Assessment,” Proc. SPIE 14th Annual Symposium on Photomask

Technology and Management BACUS, Proceedings of SPIE Vol. 3546, pp. 10-29, 1998. 4. B.J. Grenon, Mask Makers Data Book, 2002 Edition, published by Grenon Consulting, Inc., 2002. 5. K.R. Kimmel, “A Mask Industry Assessment: 2003,” 23rd Annual Symposium on Photomask Technology and

Management BACUS, Proceedings of SPIE Vol. 5256, pp. 331-43, 2003. 6. G. Shelden and S. Hector, “Mask industry Assessment, 2004,” Photomask Technology Conference, Proceedings of

SPIE Vol. 5567, pp. 1-12, 2004 7. G. Shelden and S Hector, “Mask industry Assessment, 2005,” Photomask Technology Conference, Proceedings of

SPIE Vol. 5992, 2005 8. G. Shelden and P. Marmillion, “Mask industry Assessment, 2006,” Photomask Technology Conference,

Proceedings of SPIE 6349-2, 2006 9. G. Shelden, P. Marmillion and G. Hughes, “Mask industry Assessment, 2007,” Photomask Technology Conference,

Proceedings of SPIE 6730-2, 2007 10. G. Hughes, H. Yun, “Mask industry Assessment, 2008,” Photomask Technology Conference, Proceedings of SPIE

7122-02, 2008. 11. G. Hughes, H. Yun, “Mask industry Assessment, 2009,” Photomask Technology Conference, Proceedings of SPIE

7488-2, 2009. 12. G. Hughes, H. Yun, “Mask Industry Assessment Trend Analysis: 2010,” 26th European Mask and Lithography

Conference, Proceedings of SPIE 7545-2, 2010. 13. G. Hughes, D. Chan, “Mask industry Assessment, 2010,” Photomask Technology Conference, Proceedings of SPIE

7823-3, 2010. 14. G. Hughes, D. Chan, “The 2002 to 2010 Mask Survey Trend Analysis,” 27th European Mask and Lithography

Conference, Proceedings of SPIE 7985-1, 2011. 15. Y. D. Chan, “Mask Industry Assessment: 2011,” Photomask Technology Conference, Proceedings of SPIE 8166-2,

2011. 16. International Technology Roadmap for Semiconductors, 2011 Edition, Lithography Chapter.

Proc. of SPIE Vol. 8352 835203-13


PROCEEDINGS OF SPIE · and technical status of the critical mask industry. ... Taiwan Semiconductor...

Documents

Transcript of PROCEEDINGS OF SPIE · and technical status of the critical mask industry. ... Taiwan Semiconductor...