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LECTRONEVICESOCIETY

April 2004 Vol. 11, No. 2 ISSN:1074 1879 Editor-in-Chief: Ninoslav D. Stojadinovic

Your Comments SolicitedYour comments are most welcome. Please writedirectly to the Editor-in-Chief of the Newsletter at

[email protected]

The seventh annual IEEE IITC (International Interconnect Technology Con-ference), the premier conference dedicated to advanced interconnect tech-nology, will be held June 7-9, 2004 at the San Francisco Airport HyattRegency Hotel, conveniently located 20 minutes from Silicon Valley anddowntown San Francisco.

The IITC was established with the support of the IEEE Electron DevicesSociety to provide an international forum to address interconnect issuesfrom a system level viewpoint. The ever-increasing demand for more highlyintegrated circuit density and performance has led to a crisis in connectivity,and has shifted the design, cost, performance and reliability focus to inter-connects. New materials, architectures, communication mechanisms andprocess technologies have arisen to meet this challenge, and no other semi-conductor technology sector has been growing or changing more rapidly.The IITC provides a unique forum for professionals in the semiconductorindustry and academia to present and discuss interconnect-related issuesand new technologies for the fabrication of advanced interconnects inmonolithic ICs, multi-chip modules (MCMs) and state-of-the-art packages.

This conference provides several venues for learning and professionalinteraction. The ever-popular short course, which addresses advancedinterconnect process, design and reliability issues, will once again beoffered on the day preceding the conference (June 6), and participation isstrongly encouraged by those wishing to keep abreast of the latest inter-connect technology advances. Without doubt, the cost and performance ofULSI circuits strongly depend on the capability and productivity of intercon-

Table of ContentsUpcoming Technical Meetings...................1

• 2004 IITC • 2004 SIMC• 2004 IVNC • 2004 VLSI Symposium

EDS Technical Committees Chair’s Report...3Message from the EDS Newsletter

Editor-in-Chief ...........................................7

Society News......................................................8• December 2003 AdCom Meeting Summary • 2003 EDS J.J. Ebers Award • 2004 EDS J.J. Ebers Award Call for Nominations• 2003 EDS Distinguished Service Award• EDS Members Awarded 2002 National

Medal of Technology• EDS Members Named Winners of 2004 IEEE

Technical Field Awards• 34 EDS Members Elected to IEEE Grade of

Fellow• Rajendra Singh Receives the RTP Conference

J. Gibbons Achievement Award• Congratulations to the EDS Members Recently

Elected to IEEE Senior Member Grade• Final Call for Nominations for the 2004 EDS

Graduate Student Fellowship Program• 2003 EDS Chapter of the Year Award• EDS Regions 1-3 & 7 Chapters Meeting

Summary• EDS Distinguished Lecturer/Chapter Partner

visits East Ukraine • Reliability – Year-In-Review Seminar

Regional & Chapter News ...........................22

EDS Meetings Calendar ...............................30Call for Nominations - 2003 EDS Region 9

Outstanding Student Paper Award .....31In Memory of James M. Early..................32Summary of Changes to the EDS

Constitution and Bylaws......................32

continued on page 5

2004 IEEE InternationalInterconnect Technology

Conference (IITC)

2004 IEEE InternationalInterconnect Technology

Conference (IITC)

2 IEEE Electron Devices Society Newsletter ❍ April 2004

President

Hiroshi IwaiTokyo Institute of TechnologyE-Mail: [email protected]

Vice President

Ilesanmi AdesidaUniversity of IllinoisE-Mail: [email protected]

Treasurer

Paul K. L. YuUniversity of California at San DiegoE-Mail: [email protected]

Secretary

John K. LowellConsultantE-Mail: [email protected]

Jr. Past President

Steven J. HilleniusAgere SystemsE-Mail: [email protected]

Sr. Past President

Cary Y. YangSanta Clara UniversityE-Mail: [email protected]

Awards Chair

Alfred U. Mac RaeMac Rae TechnologiesE-Mail: [email protected]

Educational Activities Chair

Ilesanmi AdesidaUniversity of IllinoisE-Mail: [email protected]

Meetings Chair

Kenneth F. GallowayVanderbilt UniversityE-Mail: [email protected]

Membership Chair

James B. KuoNational Taiwan UniversityTel: +886 2 236352251 Ext. 338E-Mail: [email protected]

Publications Chair

Renuka P. JindalUniversity of Louisiana at LafayetteE-Mail: [email protected]

Regions/Chapters Chair

Cor L. ClaeysIMECE-Mail: [email protected]

Technical Committees Chair

Mark E. LawUniversity of FloridaE-Mail: [email protected]

IEEE Newsletters

Paul DotoIEEE Operations CenterE-Mail: [email protected]

EDS Executive Director

William F. Van Der VortIEEE Operations CenterE-Mail: [email protected]

IEEE Electron Devices Society Newsletter (ISSN 1074 1879) is published quarterly by the Electron Devices Society of the Institute of Electrical and ElectronicsEngineers, Inc. Headquarters: 3 Park Avenue, 17th Floor, New York, NY 10016-5997. Printed in the U.S.A. One dollar ($1.00) per member per year is included inthe Society fee for each member of the Electron Devices Society. Periodicals postage paid at New York, NY and at additional mailing offices. Postmaster: Sendaddress changes to IEEE Electron Devices Society Newsletter, IEEE, 445 Hoes Lane, P.O. Box 1331, Piscataway, NJ 08855-1331.

Copyright © 2004 by IEEE: Information contained in this Newsletter may be copied without permission provided that copies are not used or distributed fordirect commercial advantage, and the title of the publication and its date appear on each photocopy.

EDS AdComElected Members-at-Large

(Elected for a three-year term (maximum two terms) with ‘full’ voting privileges)

2004 Term 2005 Term 2006 Term

M. Estrada del Cueto (1) C.L. Claeys (2) S.S. Chung (1)K. F. Galloway (2) J.A. Dayton, Jr. (2) T. Hiramoto (2)S. J. Hillenius (2) M. Fukuma (2) L.M. Lunardi (2)C. Jagadish (2) F.J. Garcia-Sanchez (1) M. Lundstrom (1)J. K. O. Sin (1) K. Lee (2) A. Wang (1)R. Singh (2) J.J. Liou (1) H.S.P. Wong (2)N.D. Stojadinovic (1) M. Ostling (2) X. Zhou (1)

D.L. Pulfrey (2)

ELECTRON DEVICES

SOCIETY

ELECTRON DEVICES

SOCIETY

CONTRIBUTIONS WELCOMECONTRIBUTIONS WELCOME

Readers are encouraged to submit news items concerning the Societyand its members. Please send your ideas/articles directly to either the Edi-tor-in-Chief or appropriate Editor. The e-mail addresses of these individu-als are listed on this page. Whenever possible, e-mail is the preferredform of submission.

Newsletter DeadlinesIssue Due Date

January October 1stApril January 1stJuly April 1stOctober July 1st

REGIONS 1-6, 7 & 9

Eastern, Northeastern & South-

eastern USA (Regions 1, 2 & 3)

Murty S. PolavarapuBAE SystemsE-Mail: [email protected]

Central USA & Canada (Regions 4

& 7)

Arokia NathanUniversity of WaterlooE-Mail: [email protected]

Southwestern & Western USA

(Regions 5 & 6)

Sunit TyagiIntelE-Mail: [email protected]

Latin America (Region 9)

Adelmo Ortiz-CondeUniversidad Simon BolivarE-Mail: [email protected]

REGION 8

Eastern Europe & The Former

Soviet Union

Alexander V. GridchinNovosibirsk State Technical Uni-versityE-mail: [email protected]

Scandinavia & Central Europe

Andrzej NapieralskiTechnical University of LodzE-Mail: [email protected]

UK, Middle East & Africa

Gady GolanThe Open UniversityE-Mail: [email protected]

Western Europe

Christian ZardiniUniversite Bordeaux IE-Mail: [email protected]

REGION 10

Australia, New Zealand & South

Asia

Xing ZhouNanyang Technological UniversityE-Mail: [email protected]

Northeast Asia

Hisayo Sasaki MomoseToshiba CorporationE-Mail:[email protected]

East Asia

Hei WongCity University of Hong KongE-Mail: [email protected]

Editor-In-Chief

Ninoslav D. StojadinovicUniversity of NisE-Mail: [email protected]

NEWSLETTER

EDITORIAL STAFF

NEWSLETTER

EDITORIAL STAFF

April 2004 ❍ IEEE Electron Devices Society Newsletter 3

EDS Technical Committees Chair’s ReportEDS Technical Committees Chair’s Report

The Electron Device Society has set-uptechnical committees to help makesure the Society is serving the righttechnical areas. The committees coor-dinate with meetings and publicationsto help insure that the technical infor-mation IEEE is rightly proud ofremains on target and covers all theareas the members of the EDS areinterested in.

There are 14 technical committeescovering a wide spectrum of topics.They range from mainstream silicontechnologies (VLSI Technology andCircuits) to more exotic materials(Organic Electronics) and emergingareas (Nanotechnology). Below is thecomplete list of the committees andtheir respective chairs.

We are currently refining the char-ter of a technical committee chair, sothe role of the committees is betterunderstood. The primary reason thatcommittees exist is to make sure theEDS is responsive to new trends. TheEDS, as an active technical society ofthe IEEE, needs to make sure that thetechnical offerings of the Society arein tune with emerging trends. TheSociety needs to be nimble enoughto make sure it helps get meetingsstarted or expanded to include newtopical areas.

The technical committees performseveral important functions for meet-ings management. We review andendorse all meetings that request anytype of EDS support (both financial &non-financial). This is done to help

make sure new meetings meet twogoals. First, the meeting must coveran area of importance to the Societymembership. Second, the meetingcan’t be in competition with anothermeeting – there are already over 140EDS sponsored meetings. To helpcontrol the growth of meeting num-bers, we also will be starting toreview EDS sponsorship of meetingsto see if EDS should sunset itsinvolvement. As part of our meetingsrole, we also offer advice and sugges-tions to conferences. We can help aconference identify invited speakers,panelists, or short course lecturers.

The committees also work withpublications. We attempt to coordi-nate with the Editors-in-Chief of thejournals fully sponsored by EDS, i.e., –

Transactions on Electron Devices andElectron Device Letters. Also, severalof the committees have been veryactive in helping some of the publica-tions co-sponsored by EDS with othersocieties be successful. One of thethings the technical committees havebeen active in is creation of specialissues. For example, the CompoundSemiconductor Device and CircuitsCommittee helped organize a specialissue of the Transactions on Semicon-ductor Manufacturing (August 2003),entitled “Compound SemiconductorMicroelectronics Manufacturing: TheFuture is Here.” We also get involvedwith book proposals as appropriate.

The technical committee structureexists primarily to serve members’technical needs by making sure thoseneeds are identified and addressed.We work with the conferences andmeetings and journal editorship tomake sure timely and relevant infor-mation is available to you to stay cur-rent in the field. If you see areas wherethe Electron Devices Society can betterserve your needs for technical infor-mation, please share it with the appro-priate technical committee chair.

Mark E. LawEDS Technical Committees Chair

University of FloridaGainesville, Fl, USA

Nine of the 14 of EDS Technical Committee Chairs (left to right) Alan Seabaugh, John Meakin, JimDayton, Herb Bennett, Mark Law, Leda Lunardi, Andy Steckl, Chennupati Jagadish, and Rajendra Singh

EDS Technical Committee Chairs


The IEEE International VacuumNanoelectronics Conference(IVNC 2004) formerly known asthe International Vacuum Micro-electronics Conference (IVMC),which rotates between America,Europe and Asia, returns to theUSA in 2004. The 17th IEEEInternational Vacuum Nanolec-tronics Conference (IVNC) will beheld from Sunday, July 11 to Fri-day, July 16, 2004 at the Massa-chusetts Institute of Technology,Cambridge, MA, USA. The conferencelocation is the Tang Center at MIT andProfessor Tayo Akinwande will serveas the conference chairperson.

Since the first IVMC in Williams-burg, Virginia in 1988 under the pio-neering sponsorship of IEEE, theconference has evolved into the lead-ing international forum for reportingresearch in field emission mecha-nism, materials and devices, vacuumnanoelectronics, vacuum microelec-tronics, field ionization and field emis-sion displays. A highlight of theconference will be the presentation ofthe Shoulders-Gray and Spindt (SGS)award for the best student paper atthe conference banquet.

Vacuum nanoelectronics and fieldemission devices have evolved fromlaboratory curiosities to device tech-nologies for a number of exciting andemerging applications ranging fromfield emission displays to electronbeam lithography. Early work in fieldemission arrays focused on makingarrays of gated microstructures basedon metal or semiconductor field emis-sion tips. These efforts focused onimproving emission properties byforming nano-meter tip structures orlowering the workfunction of theemitting tips. Field emission arraysbenefited from an exponentialincrease in feature density and theability to fabricate nanometer struc-tures using advanced lithographicand fine-feature deposition and etchtools. Recent advances in materialsscience specifically in carbon nan-

otube, semiconductor nanowires,micro-crystalline diamond, amor-phous carbon, wide band semicon-ductors (GaN, AlN, AlGaN, SiC etc) aswell as metal carbides have resultedin a limitless set of possibilities forimproving device performance andincrease the potential applications forfield emitters. The materials and fab-rication technology advances haveallowed large-scale arrays of fieldemitters with nano-scale featuresoperating at low voltages.

Applications of field emissiondevices include high frequency pow-er amplifiers, switching devices andradiation-hard electronics. Others areminiature x-ray sources, miniaturefree electron lasers and multi-elec-tron beam lithography. The ability tofabricate large area field emissiondevices on a variety of substrates hasled to the demonstration of 30" flatpanel displays, very high resolutionimagers (vidicons), jumbo displays,theater lights and backlights.

The goal of the conference is tobring together scientists and engi-neers with basic and applied researchinterests in electron and ion emissionand devices based on these phenom-ena. The objective is to foster a crossbreeding of ideas between basic andapplied research in field emission andfield ionization phenomena, and itstechnical applications in communica-tions, multimedia, and nanotechnolo-gy and nanotechnology research.This conference will provide a forumfor presentation and discussion of

recent developments in electronand ion emission mechanisms,new materials for electron andion emission, vacuum nanoelec-tronic devices and technologiesand field emission displays. Oth-er topics of interest includethrusters based on ion or colloidemission and sensors.

Presentations are expectedfrom both industrial and academ-ic groups highlighting progressin a wide range of areas includ-

ing field emission displays, surfacescience relevant to field emission,miniaturized X-ray sources, and fieldionization. Past conferences have hada number of exciting announcementsand display product demonstrations,including carbon nanotube-based andhigh resolution Spindt-tip based fullcolor FED panels.

The program will include technicalsessions comprised of both invitedand contributed papers, which maybe given in the form of oral as well asposter presentations. A number ofinternational experts will giveoverviews on new developments andrecent results. Workshops will be heldon a number of specific subjects.Papers are solicited for oral andposter presentations at the IVNC ’04in all research topics related to fieldelectron emission and field ionizationphenomena and their applications tonovel devices. The main topics are:

Theory, Modeling andSimulationField electron emission, field ioniza-tion, charged droplet emission, newelectron, ion and liquid-metal sources,trajectories of charged particles,including near the field emitter andbeam optics, vacuum micro- andnano-electronic devices.

Materials and Technologies forCold CathodesMetal, silicon and wide bandgapsemiconductor electron emitters, car-bon materials, carbon nanotubes,

Upcoming Technical MeetingsUpcoming Technical Meetings

2004 IEEE International Vacuum

Nanoelectronics Conference (IVNC ’04)

2004 IEEE International Vacuum

Nanoelectronics Conference (IVNC ’04)

continued on page 5


nect materials and processing equip-ment. In recognition of this critical role,supplier exhibits and seminars areincluded as an integral part of the IITCtechnical program and will be held onthe first and second days of the confer-ence. These exhibits and seminarsoffer additional learning and network-ing opportunities, and provide alterna-tive forums to address specifictechnological challenges.

Oral presentations and posterpapers offered during the conferencespan a broad range of interconnecttechnology topics, which include:1. Dielectrics: Dielectric materials

(low k, high k, ARCs, etc.) anddeposition processes (vapordeposition, CVD, spin-on, etc.) forinterconnect applications

2. CMP/Planarization: Dielectric/Met-al CMP processes, equipment andmetrology issues, and Alternateplanarization techniques.

3. Metallization: Metal depositionprocesses/equipment (PVD, CVD,ALD, electroplating) and materialscharacterization, with particularemphasis on advanced aluminumand copper metallization.

4. Process Integration: Multilevelinterconnect processes, clusteredprocesses, novel interconnectstructures, contact/via integration,

metal barrier and materials inter-face issues, etc.

5. Process Control/Modeling: CMP,metal/dielectric deposition andetching processes, PVD, CVD,electroplating, etc.

6. Reliability: Metal electro migra-tion and stress voiding, dielectricintegrity and mechanical stability,thermal effects, passivationissues, interconnect reliabilityprediction/modeling.

7. Interconnect Systems: Intercon-nect performance modeling andhigh frequency characterization,interconnect system integrationand advanced packaging con-cepts (flip-chip, chip-on-chip,MCM, etc.), novel architectures.

8. System-on-a-Chip: Interconnect,design and processing of SOC,embedded memory processing,materials and integration, RF andhigh frequency passive compo-nents, noise and cross-talk issues

9. Dry Processing: Dry etching ofvias, trenches and damascenestructures, dry etching of metal,dry cleaning processes, plasmainduced damage, etc.

10. Alternative Interconnects: Ad-vanced interconnect concepts,optical and RF interconnect, super-conductors, nanotechnology-

based interconnect, etc.Given the rapid acceleration of

integrated circuit technology, the lasttopic provides an important forum fordiscussion of the interconnect crisisand potential paradigm shifts to novelinterconnect schemes.

Professionals involved in intercon-nect-related activities are stronglyencouraged to participate in thisexciting new conference. Detailedinformation can be obtained from theIITC website: http://www.ieee.org/con-ference/iitc. For additional informa-tion or inquiries regarding supplierexhibits and seminars please contactWendy Walker, IITC Administrator at+1 301-527-0900 Ext. 104, Fax: +1-301-527-0994, or email: [email protected].

Betsy WeitzmanIITC General Co-Chair

International SEMATECHAustin, TX, USA

Douglas C.H. YuIITC General Co-Chair

TSMCHsinchu, Taiwan

Joaquin TorresIITC General Co-Chair

STMicroelectronicsCrolles, France

2004 IEEE International Interconnect Technology

Conference (IITC)

2004 IEEE International Interconnect Technology

Conference (IITC)(continued from page 1)

nanowires, negative electron affinitysurfaces, coatings and multi-layerthin-films, emitter structures (flat sur-faces, high aspect ratio structures andNEA surfaces), reliability, lifetime,emission noise, interactions withresidual gases, ion bombardment andcurrent limitations.

Design, Fabrication andCharacterization of VacuumNanoelectronic DevicesMicro- and nano-fabricated emittersand integrated electrodes, MIMs, flatpanel displays and display phosphors,field emission microwave amplifiers,sensors & actuators, analytical instru-ments and novel applications.

Student participation is encouragedfor the conference. The Shoulders-

Gray-Spindt award will be presentedhonoring a student or recent graduatewho presents the most innovativework at the conference.

IVNC-2004 venue is the campus ofthe Massachusetts Institute of Tech-nology, located in Cambridge, Massa-chusetts. Cambridge is just across theCharles River from Boston and itoffers an exciting multi-cultural set-ting where visitors from around theworld mingle in the shadow of two ofthe world’s premier educational insti-tutions: Massachusetts Institute ofTechnology at Kendall Square andHarvard University at Harvard Square.

A city with a rich cultural heritage,Boston offers renowned museums,educational institutions and year-round performances in the arts. Near-

by are the waterfront, public garden,and many fine locales for dining andshopping, all easily accessible bypublic transportation.

Short abstracts are due on April 1,2004. For more information on theconference and to view the call forpapers please visit the website athttp://www-mtl.mit.edu/research/ivncor contact the organizing committeevia email at [email protected]. Thelocal organizing committee consistsof Professor Tayo Akinwande, Chair,Dr. Ioannis Kymissis and Dr. Ching-yin Hong.

Tayo Akinwande,IVNC General Chair

Massachusetts Institute of TechnologyCambridge, MA, USA

2004 IEEE International Vacuum Nanoelectronics Conference 2004 IEEE International Vacuum Nanoelectronics Conference (continued from page 4)


The 24th Annual Symposium onVLSI Technology will be held in thebeautiful city of Honolulu, HawaiiJune 15-17, 2004. The Japan Soci-ety of Applied Physics (JSAP) andthe IEEE Electron Devices Society(EDS) jointly sponsor the Sympo-sium on VLSI Technology.

The conference will be held inthe Hilton Hawaiian Village andbegins with a one-day short courseheld on Monday, June 14, 2004.This is followed by three days oftechnical sessions held June 15-17,2004. The technical sessions com-mence with a plenary sessiongiven by distinguished invited speak-ers, and then continue with presen-tations of submitted technicalpapers. Evening “Rump Sessions”on topics of current technical interestwill also be held. A banquet will beheld on the evening of Tuesday,June 15, 2004.

The Symposium welcomes thesubmission of papers on all aspects

of VLSI Technology. The scope of theSymposium includes:• New concepts and breakthroughs

in VLSI devices and processes • New functional devices including

quantum effect devices with possi-ble VLSI implementation

• Materials innovation for MOSFETand interconnect in VLSI

• Advanced lithography and fine pat-

terning technologies for highdensity VLSI

• Process/Device modeling of VLSIdevices

• Packaging and reliability of VLSI devices

• Theories and fundamentals related to the above devices

• New concepts and technologies for VLSI manufacturingTwo technical committees con-

sisting of technical experts fromindustry and academia review sub-mitted technical papers. These twocommittees are a North Americaand Europe (NAE) committee, and

a Japan and the Far East (JFE) com-mittee. Based on the combined rank-ing of these two committees, the bestpapers are selected and organizedinto technical sessions.

One of the strengths of the Sympo-sium on VLSI Technology is its asso-ciation with the Symposium on VLSICircuits, which is held each year atthe same location during the same

The 13th IEEE Semi-conductingand insulating Materials Confer-ence (SIMC-XIII 2004) will be held20-25 September 2004 in Beijing,China. The SIMC is a series ofbiennial conferences initiated in1980 in Nottingham (UK). SIMCwill continue its tradition of high-lighting the fundamental materialsproblems of compound semicon-ductors, which are widely used forelectronic and optoelectronicdevices. Beijing is a city of con-trasts. On one hand, it’s fastbecoming a modern city of first-class hotels, business centers,shopping malls and wide avenues.On the other hand, there are theHutongs, those ageless communitiesof narrow streets that have changedlittle over the past 700 years.

An important purpose of the meet-ing is to provide an opportunity forscientists and engineers from boththe academic sphere and industry tomeet together for an efficient scientif-

ic exchange. The following seven top-ical areas comprise the scope of theConference:

• Semi-insulating III-V compounds, • Non-Stoichiometric III-V com-

pounds• Narrow band gap nitrides such as

GaAsN and GaAsPN etc,

• Wide gap materials such as GaN,AlGaN, AlGaInN, SiC and ZnO etc,

• Nanomaterials and technologies • Novel materials • All kinds of devices emerging

from the above materials.

The IEEE Electron Devices Soci-ety, the Chinese Academy of Sci-ences, and the National NaturalScience Foundation of China, spon-sor the conference. For additionalconference program and registrationinformation, please view our web-site at http://simc.semi.ac.cn:6666/ orcontact Conference Chairman, Prof..Zhanguo Wang, at: Tel: 0086-10-

82304250; Fax: 0086-10-82305002;Email: [email protected].

Zhanguo Wang, SIMC General ChairKey Laboratory of Semiconductor

Materials ScienceInstitute of Semiconductors, CAS, China

2004 IEEE Semi-conducting & Insulating

Materials Conference (SIMC)

2004 IEEE Semi-conducting & Insulating

Materials Conference (SIMC)

2004 IEEE Symposium on VLSI Technology 2004 IEEE Symposium on VLSI Technology


week. The 2004 Symposium on VLSIcircuits will also be held at the HiltonHawaiian Village June 17-19, 2004. Ajoint “Rump Session”, on a topic ofinterest to both technologists and cir-cuit designers, will be held on theevening of Wednesday, June 16, 2004.

The 2004 Symposium on VLSITechnology will be the 24th suchmeeting. The Symposium was initi-ated for the purpose of bringingtogether VLSI technologists fromaround the world in a forum whereideas and results can be exchangedand directions for future advancescan be discussed and debated. Thelocation of the Symposium typicallyalternates between the United Statesand Japan. The 2003 Symposiumon VLSI Technology, held in Kyoto,Japan, was attended by more than500 participants from around the

world, including attendance fromthe U.S., Japan, Europe, Taiwan,and Korea.

Honolulu, Hawaii is a beautifulcity, which includes many beautifulphysical and cultural attractions.Travel to the other surroundingHawaiian Islands, each of whichoffers a unique setting and flavor, isalso relatively easy. The HiltonHawaiian Village, located on world-famous Waikiki Beach, is a world-class facility, which offers manyrecreational opportunities in additionto the intellectual stimulation of theconference. The Hotel is easilyreached by taxi from nearby Honolu-lu International Airport.

For further information, please visitour web site at http://www.vlsisympo-sium.org, or contact the followingorganizations:

Secretariat for VLSI Symposia(USA) Widerkehr and Associates

16220 S. Frederick Ave.Suite 312

Gaithersburg, Md. 20877 USATel: +1 301 527 0900 ext. 103

Fax: +1 301 527 0994E-mail: [email protected]

Secretariat for VLSI Symposia(Japan) c/o Business Center for

Academic Societies Japan5-16-9 Honkomagome, Bunkyo-ku,

Tokyo 113-8622, Japan.Tel: +81 3 5814 5800Fax: +81 3 5814 5823

E-mail: [email protected]

Yuan TaurVLSI General Chair

University of CaliforniaSan Diego, CA, USA

2004 IEEE Symposium on VLSI Technology 2004 IEEE Symposium on VLSI Technology (continued from page 6)

After six years of distinguished ser-vice, Dr. Wee Kiong Choi has departedfrom the Editorial Board this year. Iam taking this opportunity to thankWee Kiong for his dedicated serviceto the Newsletter as a Region 10Editor. Replacing Dr. Choi is Dr.Xing Zhou from the Nanyang Tech-nological University, Singapore,whose biography follows. Xing hasa lot of experience in EDS relatedactivities, and it is my pleasure towelcome him as the new Region 10Newsletter Editor for Austral ia,

New Zealand andSouth Asia.

Xing Zhou re-ceived the B.Sc.degree in electricalengineering fromthe Tsinghua Uni-versity in 1983,and M.Sc. andPh.D. degrees in

electrical engineering from the Uni-versity of Rochester in 1987 and1990, respectively. He is currentlyan Associate Professor at theSchool of Electrical and ElectronicEngineering, Nanyang Technologi-cal University, Singapore. His pastresearch interests include MonteCarlo simulation of photocarriertransport and ultrafast phenomenaas well as mixed-mode circuit simu-lation and CAD tool development.His recent research mainly focuseson nanoscale CMOS technology anddevice compact modeling. He was aVisiting Fellow at the Center forIntegrated Systems, Stanford Uni-versity during 1997 and 2001, and aVisiting Professor at Hiroshima Uni-versity in January 2003. He hasbeen the organizer for the Work-shop on Compact Modeling (WCM)in collaboration with the Interna-tional Conference on Modeling and

Simulation of Microsystems (MSM)in Puerto Rico (2002), San Francisco(2003), and Boston (2004). He hasbeen a member of the Rel/CPMT/EDSingapore Chapter since 2003, andhe was one of the organizers for the3rd Workshop and IEEE EDS Mini-colloquium on Nanometer CMOSTechnology (WIMNACT-Singapore)in Oct. 2003. Dr. Zhou is a SeniorMember of IEEE, a member of theEDS VLSI Technology & Circuitsand Compact Modeling technicalcommittees, a member of the EDSRegions/Chapters Committee, anEDS Distinguished Lecturer, and anelected Member of the IEEE EDSAdCom.

Ninoslav D. StojadinovicEDS Newsletter Editor-in-Chief

University of NisNis, Serbia and Montenegro

Message from the EDS Newsletter

Editor-in-Chief

Message from the EDS Newsletter

Editor-in-Chief

Xing Zhou


President, Steve Hillenius, called the2003 annual meeting of the IEEE Elec-tron Devices Society to order on Sun-day, December 7 at the Washington,D.C. Hilton preceding the 2003 IEDM.

Executive ReportsRecognized outgoing members ofAdCom included: Arlene Santos, Ilesan-mi Adesida, S.C. Sun, and Paul Yu(elected AdCom members); Herb Ben-nett (Compound Semiconductor TCChair); Chennupati Jagadish (Optoelec-tronics TC Chair); John Meakin (Photo-voltaic Devices TC Chair); RajendraSingh (Semiconductor ManufacturingTC Chair); M. Ayman Shibib (PowerDevices TC Chair); and James Hutchby(VLSI Technology TC Chair). Steve’sopening remarks focused on the EDSstrategic plan and its progress to date.To recap, the strategic plan calls for EDSto (1) broaden the base of technicalareas of interest, (2) ensure that EDSactivities reflect global trends, and (3)enhance its industry relationship. It wasgenerally agreed by AdCom that theactions to date (which are summarizedin the following reports) are in factaligned with these goals, and that therealignment of the technical committeesand new membership initiatives in Chi-na and India are carrying this plan for-ward. Also discussed were the locationsof the Spring 2004 AdCom meeting(Madrid, May 23rd), and the Spring2005 AdCom meeting (tentativelySeoul, Korea early June).

EDS Strategic InitiativePosition Statements• Broaden the base of technical areas

of interest• Ensure EDS activities reflect the

current and future global trendsExecutive Director, Bill Van Der

Vort, took a slightly different approachthan usual in his report. In previoussessions, he listed the many adhocprojects that the Executive Office hasbeen involved in over the course ofthe year. This year he discussed the“day-to-day” organization of the Exec-utive Office, and its many functions. In

general, the Office consists of anExecutive Director, five full-time staff,and two part-time staff split into twomajor groups, Business Administra-tion, and Publications Administration,respectively, as shown in the graphic.

Bill discussed in detail the workperformed by the Business Adminis-tration Group and advisedthat he would do thesame for the PublicationsAdministration Group atthe next AdCom meeting.The Business Administra-tion group handles gen-eral administration andfinances (budgets, agree-ments, payment process-ing, purchase orders), theExCom and AdCom activi-ties (meeting support,presentation preparations,accommodations, meet-ing minutes, elections,recruitment), awards andrecognitions (nomination& selection processes,development of newawards, brochures,preparation of certifi-cates, Fellow nominationand selection, societyendorsement for IEEEawards), and chapters

and education (development of newchapters, maintain Chapter ChairsList, Chapters Partners Program, trav-el reimbursements, chapter subsidies,the Distinguished Lecturer Program,Meetings, & Videotape LendingLibrary). Other activity includes mem-bership (brochures, application

Society NewsSociety News

December 2003 AdCom Meeting SummaryDecember 2003 AdCom Meeting Summary

EDS President, Hiroshi Iwai, presents Steve Hillenius with a gift andcertificate in appreciation of his service as EDS President the past

two years.


forms, promotions, inquiries), theNewsletter (maintain schedule of arti-cles to be published, editor support,meeting & chapter news), publica-tions and CDs (production and distrib-ution of CD ROM package, jointsociety publication agreements, newpublication proposals), and technicalmeetings (maintain calendar, approvenew EDS-sponsored meetings, reviewmeeting budgets, issue loans, moni-tor status of meetings).

Chair Reports Treasurer, Paul Yu, reported that EDSfinances took a positive turn in 2003following the costly IEEE assessmentsof the previous two years, and thatthe reserves are increasing. He pro-jected a $42.9K net surplus for theyear with a possible $107K netin 2004 due to higher incomefrom publications and confer-ences. [Note: all financial infor-mation within this report is inUS$.] Reserves rose to $3,033Kfor 2003 and should remain sta-ble for 2004. The brighter finan-cial picture is also due to IEEE’schange in policy to have thereserves of jointly sponsoredpublications, e.g., the Journal ofMicroelectromechanical Sys-tems, and Transactions onSemiconductor Manufacturing, trans-ferred to the sponsoring entities.Thus, Paul stated that EDS is in goodfiscal shape compared to the last twoyears. His proposal to set the 2005page count for EDL and T-ED at 925 &2,600 pages, respectively, with a $2increase in the member price forthese publications, was passed. It wasalso voted to keep the EDS member-ship fee at $10 for 2005.

On the membership side, EDS had12,371 members as of 10/31/03,slightly down from the 2002-year endfigure of 13,368 (-7.4%). Of the 2003count, 6,982 are regular members,4,237 are permanent members, 1,129are students, and 23 remain affiliatemembers. The demographics can beseen below.

Membership Chair, James Kuo,reports that EDS’ –7.4% loss is amongthe lowest decrease of all the DivisionI societies. By comparison, CAS Soci-ety membership dropped by almost

32%. Senior membership in EDSincreased in 2003 with 103 new SMs.The Membership Committee contin-ues to promote interest through cred-it voucher programs at the IEDM, TIPmailings, and coordination of theMembership Fee Subsidy Program(MFSP), which subsidizes IEEE andEDS memberships for individualswho have an annual income that doesnot exceed $11,100. In 2003, 15 chap-ters (125 members) have takenadvantage of this program. Member-

ship is also playing a large role in theEDS Strategic Initiative. New mem-bership promotion in China and Indiareflect the increase in semiconductoractivity in these regions, particularlyChina, which has become a majorsemiconductor producer within thelast few years. James showed thattrends project a 50%-50% mix of US& non-US membership by approxi-mately 2013 with a majority for thenon-US members thereafter. In addi-tion to this new recruiting program,the committee is continuing previousinitiatives such as the promotion of

new chapters in under-servedregions, a modified version of theMembership Fee Subsidy Program(now called PMFSP) and the continua-tion of the Senior Membership Pro-gram (SMP) for membershipretention. There are plans to partici-pate in IEEE’s Corporate SponsoredMembership Program. AdCompassed motions to (1) spend $12K tosupport the PMFSP program for 2005,and (2) give $5K to the SMP initiativefor 2004.

New Regions/ChaptersChair, Cor Claeys, listed thefive new EDS chaptersformed in 2003. NamelyAP/ED/MTT/CPMT EasternNorth Carolina, ED/MTTOrange County, ED/CAS Univ.Catholique de Louvain (stu-dent branch), and ED Calcut-ta. This brings the currentnumber of worldwide chap-ters to 109. Twenty-two otherpossible chapters are in thediscussion stage for 2004.

After reviewing the various sectionalchapter activities, Cor announced thatED Boise is the EDS’ “Chapter-of-the-Year” for 2003. The DistinguishedLecturer (DL) program continuesworldwide. However, both the num-ber of lecturers (107) and the numberof lectures given (76) has dipped fromtheir respective 2002 levels accordingto Ilesanmi Adesida, Education Chair.On the other hand, the number of“Mini Colloquia”, where a group ofDL’s may visit a particular chapter orsite, has risen. This year such meet-ings were held in Japan, Korea, Sin-

“Trends project a 50%-50% mix ofUS & non-US membership byapproximately 2013 with a majorityfor the non-US members thereafter”

-James Kuo, Membership Chair

EDS Recipients of National, and EDS Awards for 2003


gapore, Romania, Brazil and Mexico.Also in 2003, the EDS VideotapeLending Library was less active withfewer tapes borrowed. The EDS Grad-uate Student Fellowship Program hada very successful year. This year’swinners were Yu-Long Jaing (FudanUniversity, Shanghai, PRC) and JavierSalcedo (Univ. of Central Florida).There were no nominees from Region8 (Europe, Middle East, and Africa).On the Short Course side, the com-mittee has produced a brochure list-ing the topics and lecturers. EDS hasbeen participating in IEEE EAB’sXplore-Based Educational ProductsInitiative (started in July 2003) withfunding from the IEEE Foundation toprovide web-based short courses. Acourse on High-K Dielectrics by JackLee (U Texas-Austin) will be EDS’ ini-tial contribution to the program.

The address by Renuka Jindal,Publications Chair, discussed hisgroup’s efforts in establishing poli-cies, procedures, & guidelines, perfor-mance metrics, publication costs,digitization, author recognition, IEEEPress relations, and all-electronic pro-cessing standards. As nanotechnolo-gy interest increases, EDS’ Field-ofInterest statement defines its interestand position in this area. With this inmind, the definition of nanotechnolo-gy broadens and often EDS mustdecide if a particular activity pertainsto EDS. This often comes down to thedifference between nano-technologyand nano-electronics. In Renuka’sview “so long as the end result ofsuch an activity is an electronic/ionicdevice it is in the domain of the Elec-tron Devices Society”. The Nanotech-nology Council plans to work withEDS on establishing guidelines. Withincreasing electronic publishing,hardcopy circulation of both EDL & T-ED is decreasing. Renuka’s groupcontinues to examine additional met-rics, or quality factors, based on edi-torial quality ratings, author surveys,and number of hits on IEEE Xplore tobetter rate publications. Both EDL &T-ED were profitable in 2003 with T-ED bringing in $540K, and EDL about$224K. As previously planned, thenumber of publications available viaXplore was reduced from 11 to 4,dropping the cost from $121K to$30K. In terms of electronic publish-ing, the status of IEEE publications is

mixed. While T-ED and EDL increas-ingly look more electronic in han-dling, and presentation (withelectronic submission and prepublica-tion access on Xplore) others havebeen less successful. T-CAD was dis-continued and T-DMR is under a lot ofstress. Thus the committee is sensi-tive to what authors and readers willbe looking for as more journals goelectronic and away from traditionalhardcopy. In closing, Renukaannounced the 2002 EDS best paperawards. The Paul Rappaport awardgoes to Yee Chia Yeo, Vivek Subra-manian, Jakub Kedzierski, Peiqi Xuan,Tsu-Jae King, Jeffrey Bokor andChenming Hu, and the inauguralGeorge E. Smith award went to agroup of researchers from IBM.

Jeff Welser, Technical Chair of the2003 IEDM, expects 1500 attendees.The financials also look good with anexpected surplus of $98K to EDS.Meetings Chair, Ken Galloway gotapproval for all EDS repeat meetingsin 2005. EDS is involved in 31 finan-cially sponsored meetings, 109 tech-nically co-sponsored meetings and nocooperation meetings. This is consis-tent with the decision made in 2002 todiscontinue purely “cooperative”sponsorship. All conferences in thefuture must be either totally spon-sored, or technically co-sponsored.Ken did express concern that for theperiod 2000-2003 EDS paid$7990.00US in late fees for confer-ences that did not close their bookson time. Some good financial news isthe EDS surplus for meetings in 2003should reach about $400,000.00

Award’s Chair, Al MacRae, pre-sented a comprehensive list of EDSmembers recognized with majornational, IEEE, and EDS awards in2003, as summarized as follows:

Al reminded the assembledAdCom to continue being pro-activein nominating members for IEEEAwards in 2004. Steve Hilleniusreported for the Fellows Chair, YoshioNishi, and he stated that from the 54nominations received and evaluatedby EDS, 19 were promoted to Fellowgrade. There were also another 17EDS Members elected who were eval-uated by other societies. Cary Yang,who heads the Nominations and Elec-tions Committee, discussed his pro-posal to change the position of EDS

Vice President to President-elect,which AdCom passed. Anothermotion was to require that at leastone AdCom member is a GOLD mem-ber (“Graduate Of the Last Decade”).AdCom voted the motions favorably.Cary also initiated a motion torename the chairs of all standingcommittees (Awards, Education,Meetings, Regions/Chapters, Mem-bership, and Publications) to VicePresident, which AdCom approved.AdCom also supported renaming theposition of Technical CommitteesChair (Mark Law) to Vice President ofTechnical Activities. Cary also gave abrief speech as outgoing Division IDirector in which he lightly touchedon the subjects of IEEE IT operations,cost control measures, and executiveIEEE recruitment and hiring. Past EDSPresident, Lew Terman, is the incom-ing Division I Director in 2004. EDLEditor-in-Chief, Yuan Taur, reportedthat EDL further reduced its totalpaper turnaround time to an averageof 3.7 months, surpassing hispromised target as EIC. Paper accep-tance increased from 42% to 45%.The 225 papers published in 2003 arehigher than the 2002 number of 205.

Technical Committee (TC)ReportsHerb Bennett’s Compound Semi-conductor TC reported their list ofhot topics for 2004, which includes40 Gb/s Optical Systems, longwavelength VCSELs (QDs orInGaAsN), optical interconnects (i.e.integration of CMOS with LEDs,VCSELs and photodetectors), organ-ic light emitting devices/displays,and widebandgap (ZnO & GaN)optoelectronics. Other issues suchas high-power UV (275nm to290nm) light emitting diodes forcommunications and biosensorapplications (e.g., AlGaN and AlN),carbon nanotube transistors, andspintronic devices (near 300K) arealso on their “hot” list. This yearHerb gave an overview of theRoadmap on Compound Semicon-ductors embedded in the 2003 ITRS.The addition of compound semitechnology in the Wireless RF andAnalog/Mixed-Signal IC TechnologyRoadmap in the “Process Integra-tion, Devices and Structures” chap-ter of the 2003 International


Technology Roadmap ( ITRS) forSemiconductors is a major step ingetting recognition for this technolo-gy. In addition, the CSDCTC logowas registered in 2003 as an officialtrademark.

Rajendra Singh, past chair of theSemiconductor Manufacturing TC,praised the work of his group and theTransactions on Semiconductor Manu-facturing staff in preparing the specialissue, “Single Wafer Manufacturing inthe Nanochip Era”. Both groups arepreparing a new issue in 2004, “Materi-al Related Manufacturing Issues inNanochip Era”. Also sponsored was aworkshop at the 2003 ISSM on “Costand Performance Challenges at the 90nm node and Beyond”. At the 2004ASMC there will be SMTC-driven paneldiscussion on growth, productivity andprofitability related issues within thesemiconductor industry. On the nan-otechnology side, Alan Seabaugh’s TCkept busy supporting the IEEE Nan-otechnology Council, the Transactionson Nanotechology, and the IEEE-Nanoconference. Nanotechnology shortcourses at IEDM and the IEEE-NanoConference were also among their 2003activities. Finally, Jim Hutchby, VLSITechnology Chair, briefly discussed hisgroup’s adding four new members,activity within the ITRS Working Groupon Emerging Research Devices, andtransferring the administration of theirwebsite to IEEE as some of theiraccomplishments. In 2003, they teamedup with the “Comp 2002” InternationalConference on Modeling and Simula-tion of Microsystems Modeling for a“Compact Models” workshop, andanother workshop on “Future Informa-tion Processing Technologies”. Amongtheir 2004 goals are proposed T-EDissues covering organic electronics,precise electrical measurement tech-niques for nanometer technologies,and Si/Dielectric Interfaces.

On the digitization scene, all EDL(1980-1987) and T-ED (1954-1987)issues have been scanned. The digiti-zation of the IEDM proceedings from1955-1987 has commenced. The 1963IEDM Proceedings remain unfound asof this writing, and a search for it is inprogress. This leaves EDS with aninteresting choice: whether or not tooffer the scanned publications as a

DVD and/or on the IEEE Xplore sys-tem, which offers web-based access.To convert all the pubs to DVD meta-data would cost about $113K versus$12K for Xplore. In addition, the costto produce the DVDs’ (as recently esti-mated) would be $65K for 5,000 ($13per set). However, DVD format ismore advanced than Xplore in termsof search capability. Moreover, DVDoffers additional possibilities such asa market segment for resale whichcould help recoup some of the moneyinvested and provide a stand-alonebetter product than Xplore, improveservice to members, and open thedoor to future DVD releases as a con-tinuous source of income. AdComwas asked to choose whether or notto go the DVD route with a number ofquestions on the table. It was voted byAdCom to share the cost with IEDM in2005 to convert all the pubs to DVDmetadata, with EDS’ cost not toexceed $50K. The additional cost ofproducing the DVDs’ will need to beaddressed at the next AdCom meet-ing. AdCom also passed that the digi-tized EDS publications database beadded to Xplore some time in 2004and made available to all EDS mem-bers as part of their membership fee.

Publication ReportsEDS IEEE Press Coordinator, JoeBrewer, reports that IEEE Press booksare doing well in the marketplace. Aspecial “Electron Devices” book seriesis being discussed where selectedbooks would carry the EDS logo, andreturn some royalties to EDS. A for-mal approval of this plan is expectedin early 2004. Newsletter Editor-in-Chief, Nino Stojadinovic, reviewed thehighly favorable comments towardsthe Newsletter made in the IEEE All-Society Research Survey made in2003. Respondees indicated that theNewsletter was very competitive interms of reader satisfaction with themore research-heavy publications,EDL & T-ED, and non-research jour-nals like Circuits & Devices Magazine.

Reporting on T-ED, Editor-in-Chief,Doug Verret, reported that the journalis accepting around 45-50% of its sub-missions with increasing interest fromJapan, Taiwan, China, and Korea. Ingeneral, sources for papers are split

between 80% from academia, and20% from industry. Doug explainedthat a two-month lag time in gettingT-ED out to subscribers in late 2002and early 2003 was due to attrition inthe IEEE Publications Department.Speaking for T-DMR, Lu Kazprzak,standing in for Tony Oates, addressedsome of the problems the publicationis experiencing. Since 2001, this all-electronic journal has had a difficulttime attracting authors and is just nowstarting to meet its budgeted pagecount. Over the past three years, thejournal has experienced some signifi-cant financial losses, which are beingequally shared with the ReliabilitySociety. The trend can be explainedby some inaccurate financial assump-tions, lack of corporate sponsorship,and insufficient promotion. It is hopedthat T-DMR will receive a share of thereturn from the IEEE All Society Peri-odicals Package in 2005, which mayoffset the money problems. AdComconsidered whether or not to let T-DMR keep going, unbundle the jour-nal, or cease publication altogether. Avote was delayed until 2004.

For 2003, the elected EDS officersare President, Hiroshi Iwai, Vice Presi-dent, Ilesanmi Adesida, Treasurer PaulYu, and Secretary, John Lowell.AdCom members who were electedfor a second term are: Toshio Hiramo-to (The University of Tokyo, Japan),Leda Lunardi (North Carolina StateUniversity, USA) and Philip Wong(IBM, USA). Newly elected AdCommembers are: Steve Chung (NationalChaio Tung University, Taiwan), MarkLundstrom (Purdue University, USA),Albert H. Wang (Illinois Institute ofTechnology, USA) and Xing Zhou(Nanyang Technological University,Singapore).

The next meeting of EDS AdCom willbe on Sunday May 23, 2004 in Madrid,Spain.

John LowellEDS Secretary

ConsultantDallas, TX, USA

John K. Lowell


The 2003 J.J. EbersAward, the presti-gious ElectronDevices Societyaward for out-standing technicalcontr ibutions toelectron devices,was presented toProfessor James D.

Plummer of Stanford University. Hewas presented with the award at theInternational Electron Devices Meet-ing in Washington, D.C. on 8 Decem-ber 2003. This award recognizesProfessor Plummer “For contribu-t ions to new devices for power,memory and logic, and fundamentalcontributions to process modeling.“

Jim Plummer was born in TorontoCanada. He received his B.S. degreefrom UCLA and his M.S. and Ph.D.degrees in EE from Stanford Universi-ty in 1966, 1967 and 1971 respectively.From 1971 to 1978 he was a researchstaff member in the Integrated CircuitsLab at Stanford. He joined the Stan-ford faculty in 1978 as an AssociateProfessor and became Professor ofElectrical Engineering in 1983. Hiscareer at Stanford has included serv-ing as Director of the IC Laboratory,Senior Associate Dean in the Schoolof Engineering, and Chair of the EEDepartment. He is currently the Fred-erick Emmons Terman Dean of theSchool of Engineering. He also holdsthe John Fluke Professorship in EE.

Much of Dr. Plummer’s early work

focused on high voltage ICs and onhigh voltage device structures. He andhis group made important contribu-tions to integrating CMOS logic andhigh voltage lateral DMOS devices onthe same chip and demonstrated cir-cuits operating at several hundredvolts. This work also led to severalpower MOS device concepts such asthe IGBT which have become impor-tant power switching devices.

Throughout the 1980s and 90s, amajor focus of his work was on siliconprocess modeling. This work involvedmany students and other faculty, par-ticularly Professor Bob Dutton, andresulted in the development of severalgenerations of SUPREM, which hasbecome the standard process model-ing tool used worldwide today. Dr.Plummer’s contributions were princi-pally in the areas of physical under-standing and modeling of oxidation,diffusion, ion implantation and anneal-ing. His recent work has focused onnanoscale silicon devices for logic andmemory and has demonstrated newdevice concepts including verticalMOSFETs, the TRAM thyristor memo-ry cell and the IMOS device whichachieves <kT/q subthreshold slopes.

Dr. Plummer is a member of theNational Academy of Engineering,and a Fellow of the IEEE. He hasreceived many awards for hisresearch, including the 1991 SolidState Science and Technology Awardfrom the Electrochemical Society,the 2001 Semiconductor Industry

Association University ResearchAward and the IEEE Third Millenni-um Medal. He has graduated over 80Ph.D. students with whom he haspublished more than 400 journalpapers and conference presenta-tions. These papers have won 8 bestpaper awards including 2 at IEDMand 3 at ISSCC. His recent textbookon VLSI technology is used by manyuniversities around the world. Hehas also received three teachingawards at Stanford. He serves on theBoard of Directors and on the techni-cal advisory boards of several publicand start-up companies and was oneof the founders of T-RAM.

Dr. Plummer directed the StanfordNanofabrication Facility from 1994 to2000 and received an NSF commen-dation in 2000 for national leadershipin building the NNUN, a consortium of5 universities who opened theirnanofabrication facilities as nationalresources for industry and for stu-dents from around the nation.

Jim and his wife Patti live in Porto-la Valley with their two daughtersKatie and Julie who are 7 and 5. Jimenjoys running, swimming, skiing,golf and scuba diving. He’s still able tooutrun and outski both daughters, butthey’re gaining on him and it’s prettyclear who the best athletes in the fam-ily will be in a few years.

Louis C. ParrilloEDS J.J. Ebers Award Chair

Austin, TX, USA

2003 EDS J.J. Ebers Award2003 EDS J.J. Ebers Award

James D. Plummer

The IEEE Electron Devices Societyinvites the submission of nominationsfor the 2004 J.J. Ebers Award. Thisaward is presented annually for out-standing technical contributions toelectron devices. The recipient(s) is

awarded a certificate and a check for$5,000, presented in December at theInternational Electron Devices Meeting(IEDM).

Nomination forms can be request-ed from the EDS Executive Office

(see contact information on page 2)or is available on the web atwww.ieee.org/organizations/society/eds/ebers.html. The deadline for sub-mission of nominations for the 2004award is 1 July.

2004 EDS J.J. Ebers Award

Call For Nominations

2004 EDS J.J. Ebers Award

Call For Nominations


The IEEE ElectronDevices Society isextremely proud ofthe services that itprovides to itsmembers. Its mem-bers generate thepremier new devel-opments in thefield of electron

devices and share these results withtheir peers and the world at large bypublishing their papers in EDS journalsand presenting results in its meetings.This is a global activity that is effectivebecause of the efforts of numerous vol-unteers. Many of these volunteerslabor in relative obscurity, with theironly reward being the satisfaction thatthey receive in being an important partof a successful organization, namely ofthe Electron Devices Society. Theyshould be thanked.

The 2003 EDS Distinguished Ser-vice Award was presented to Freder-ick H. Dill at the International ElectronDevices Meeting in Washington, D.C.on 8 December 2003.

Frederick Dill was born in Sewick-ley, PA, in 1932. He received a BS inPhysics from Carnegie Institute ofTechnology in 1954 and MSEE andPhDEE degrees from the same schoolin 1956 and 1958. In his thesis work

he did some of the first numericalmodeling of electron devices. He setup a small lab where he made thedevices himself.

He joined IBM in 1958 and had avaried career, mostly in Research,but with seven years in semicon-ductor manufacturing. He fabricatedthe first tunnel diodes in IBM andalso made their first GaAs lasers(invented coincident with Hall, et al.at GE). He is responsible for theconcept of using cleaved surfacesfor laser faces.

In the mid 1960’s, he led a groupbuilding high speed integrated circuitswith germanium as a high mobilitysemiconductor and achieved 150picosecond circuit delays in 1967. Healso terminated the program when itwas clear that silicon was the correctpath despite the lower electron speeds.

In the 1970’s, he concentrated onmetrology and lithography. He holdsthe fundamental patents on the com-puter-controlled spectrometer formeasuring thin film thickness andalso on rotating-analyzer and rotat-ing-compensator ellipsometers.

Much of his external reputation isfrom his work in photolithographywhere he and his team created thefirst process models along with theunderlying measurements needed to

support the models. The parametersused to describe photoresist expo-sure and development are now calledthe Dill Parameters.

In the 1980’s, while managing dis-play technology at IBM, he inventedthe video RAM (a DRAM with a sec-ondary port for display refresh).

In the mid 1990’s, Rick chose to re-invent his technical career and hasfocused his attention on process tech-nologies for building recording headsfor disk drives. With his electrondevice experience he has been ableto significantly contribute to theshrinking of recording heads to thenanometer range. He was promotedto IBM Distinguished Engineer in2002, IBM’s highest engineering rank.With IBM’s sale of the disk drive busi-ness to Hitachi, he moved to the newcompany in a similar role.

Rick has been married for 35 yearsto Amanda, a physician. They havethree children, Kevin, Janet, andStephen. Both sons work in computersoftware engineering. He lives in NewYork and California and enjoys hiking,skiing and historic house restoration.

H. Craig Casey, Jr.EDS Distinguished Service

Award ChairDurham, N.C., USA

2003 EDS Distinguished Service Award 2003 EDS Distinguished Service Award

On November 6, 2003, PresidentGeorge W. Bush, in a White Houseceremony, presented the NationalMedal of Technology to the team ofNick Holonyak, Jr., H. George Craford,Russell Dean Dupuis - inventors andinnovators in the light-emitting diode(LED) technology field spanning fortyyears. This medal is the highest honorin technology in the United States.The National Medal of Technologywas established by Congress in 1980and recognizes men and women whoembody the spirit of American inno-vation and have advanced thenation’s global competitiveness. Theirgroundbreaking contributions com-

mercialize technologies, create jobs,improve productivity and stimulatethe nation’s growth and development.

This team, consisting of ProfessorNicholas Holonyak, Jr., Microelec-tronics Lab, University of Illinois atUrbana-Champaign, Urbana-Cham-paign, IL and his former students M.George Craford, LumiLeds Lighting,San Jose, CA, and Russell DeanDupuis, Georgia Institute of Technol-ogy at Atlanta, GA, has made pio-neering contributions and beenleaders in developing and commer-cializing the LED as a solid statelight source. The citation for theiraward is; “For contributions to the

development and commercializationof light-emitting diode (LED) tech-nology, with applications to digitaldisplays, consumer electronics,automotive lighting, traffic signalsand general i l lumination,” theworld’s most efficient light sourcebeing mass-produced today.

Nick Holonyak Jr. made the firstvisible LED in 1962, ushering in anew era in electronics and digital dis-play technology. Ten years later, M.George Craford made the extremelybright yellow LED, expanding thepotential uses of LEDs dramatically.He subsequently led the R&D effortsat Hewlett-Packard/Agilent Technolo-

EDS MEMBERS AWARDED 2002

NATIONAL MEDAL OF TECHNOLOGY

EDS MEMBERS AWARDED 2002

NATIONAL MEDAL OF TECHNOLOGY

Frederick H. Dill


EDS MEMBERS NAMED WINNERS OF

2004 IEEE TECHNICAL FIELD AWARDS

EDS MEMBERS NAMED WINNERS OF

2004 IEEE TECHNICAL FIELD AWARDS

gies/LumiLeds Lighting, resulting inproducts that are now the highest-brightness available LEDs. In 1977,Russell Dupuis demonstrated thatmetalorganic chemical vapor deposi-tion (MOCVD) could be used to growhigh-quality semiconductor thin filmsand devices, including LEDs. Today,the MOCVD materials technology is awidely used method for the high-vol-ume production of LEDs worldwide.

The proven and anticipated eco-nomic effects of LED technology areimpressive. High-efficiency/high-brightness LEDs promise to revolu-

tionize lighting in general, in bothexterior and interior applications. LEDtechnology is widely used in the indi-cator, display and illumination mar-kets, for instance clocks, watches,medical equipment, printers, flash-lights and signs. LED technology israpidly taking over the automotivelighting and traffic signal markets.LEDs are already beginning to pene-trate the low-power white-light mar-ket in homes and in business. Theirhigh efficiency and resultant wide-spread use will have an appreciableimpact on worldwide energy require-

ments and thereby be an importantcontributor to the objective of reduc-ing pollution.

The Electron Devices Society isproud of their accomplishments andcongratulates this team of NicholasHolonyak, Jr., M. George Craford andRussell Dean Dupuis for this highestlevel of recognition and for their impor-tant contributions to electron devices.

Alfred U. Mac RaeEDS Awards Chair

Mac Rae TechnologiesBerkeley Heights, NJ, USA

Five EDS Members were among thewinners of the 2004 IEEE TechnicalField Awards. They are:

Stephen Y. Chouof Princeton Uni-versity won the2004 IEEE CledoBrunetti Award.His citation states,“For the inventionand development oftools for nanoscale

patterning, especially nanoimprint lith-ography, and for the scaling of devicesinto new physical regimes.”

Dr. Stephen Y. Chou’s pioneeringresearch on a broad variety of nan-otechnologies and nanodevices hashelped shape new paths in the fieldsof nanofabrication, nanoscale elec-tronics, optoelectronics, magneticsand materials. In February 2003, theMIT Technology Review selectednanoimprint technologies and Chou’slaser-assisted direct imprint (LADI) asone of the “10 emerging technologiesthat will change the world.”

Dr. Chou’s graduate work used X-ray lithography to scale MOSFETs tothe 60 nm range, and since 1985 hehas demonstrated very small MOS-FETs and single electron transistorsusing various nanotechnologies. In1995, he pioneered his best-knownwork (nanoimprint lithography (NIL) arevolutionary nanoscale patterningmethod that allows 10 nm patterningover large areas with high throughputand low cost. Numerous universitiesand industrial laboratories have since

established NIL research programs inresponse to Dr. Chou’s work. The useand development of NIL in academiaand industry has grown rapidly.Recently NIL was selected as one ofthe next generation lithographies forsemiconductor IC manufacturing.Other achievements include hisexplorations of new phenomena andnanodevices, where conventional the-ory may no longer apply: such as lith-ographically induced self-assembly(LISA), sub wavelength optical ele-ments and nanomagnetic devices.

Stephen Y. Chou was born in Bei-jing, China, on 30 October 1955. Hestudied physics at the University of Sci-ence and Technology of China and theState University of New York (SUNY) atStony Brook, and in 1986 he earned adoctorate at the Massachusetts Instituteof Technology (MIT), Cambridge, Mass-achusetts. After working at the ChineseAcademy of Sciences’ Institute of HighEnergy Physics in Bejing, SUNY StonyBrook, MIT and Stanford University inPalo Alto, California, Dr. Chou becamea faculty member at the University ofMinnesota in Twin-City in 1989 andeventually named the McKnight-LandGrant Chair Professor in the Depart-ment of Electrical Engineering. Since1997, he has been the Joseph C. ElginProfessor of Electrical Engineering andhead of the Nanostructure Laboratoryat Princeton University, Princeton, NewJersey. He recently founded NanonexCorp., and NanoOpto Corp., in Mon-mouth Junction and Somerset, NewJersey respectively.

An IEEE and Packard Fellow, Dr.

Chou is a reviewer for a number ofIEEE publications. He has received theIEEE LEOS Best Student Paper Award,the University of Minnesota’s GeorgeTaylor Distinguished ResearchAward, and the DARPA’s ULTRA Pro-gram Significant Technical Achieve-ment Award. Dr. Chou has publishedmore than 280 papers and holds eightU.S. patents. His work has been citedover 3000 times by other scientificjournal papers.

Youssef Aly El-Mansy of Intel Cor-poration won the2004 IEEE FrederickPhilips Award. Hiscitation states,“For leadership indeveloping state-of-the-art logictechnologies for

high performance/high volume generalpurpose microprocessors.”

Dr. Youssef A. El-Mansy has ledthe way in balancing technologicalperformance with manufacturabilityin the development of microproces-sors. Thanks to his pioneering leader-ship, Intel has achieved preeminencein its field and the semiconductortechnology cycle has been accelerat-ed from three years to two.

Dr. El-Mansy joined Intel Corpora-tion, Hillsboro, Oregon, as programmanager of technology evaluation in1979. He was appointed group vicepresident in 1993 and is currently corpo-rate vice president and director of logictechnology development. In the mid-1980s, Dr. El-Mansy led the develop-

April 2004 ❍ IEEE Electron Devices Society Newsletter 15October 2003 ❍ IEEE Electron Devices Society Newsletter 15

ment of 1-micron logic technology.After being named director of PortlandTechnology Development (PTD), heguided Intel’s logic technologies from 1-micron to the 0.065-micron generation.In doing so, Dr. El-Mansy implementedthe “copy exactly” methodology,requiring all Intel manufacturing fabs tocopy the PTD process tools and recipesexactly. This has placed extra burden onthe development group, but hasenabled unprecedented productionrates at multiple sites and has beeninstrumental to Intel’s preeminence incost-effective support of high-volumeproduct demand.

As a leader, Dr. El-Mansy personallycontributed to critical technology choic-es and established the need to balanceperformance and manufacturabilitywhen selecting logic process features.He attracted and retained people withhigh technical skills and the willingnessto take initiative, and under him the PTDgroup has become a leading R&D insti-tution. Dr. El-Mansy is highly respectedfor his depth of VLSI knowledge and hisearly work in MOS devices and model-ing. His current responsibilities includelong-term research, leading edge micro-processor technology development andmanufacturing, technology CAD andredesign of microprocessors for newtechnology generations.

Youssef A. El-Mansy was born on 8March 1945 in Dessouk, Egypt. Heearned a bachelor’s and master’s of sci-ence in electrical engineering fromAlexandria University in Egypt in 1966and 1970, respectively, and a doctoratein electronics from Carleton University,Ottawa, Ontario, Canada, in 1974.

An IEEE Fellow, Dr. El-Mansy hasserved on the IEEE Electron DevicesSociety (EDS) VLSI Symposia ExecutiveCommittee, was a member of the EDSAdCom, VLSI Technology SymposiumProgram Committee, and the Interna-tional Electron Devices Meeting (IEDM)Program Committee. He has publishedover 30 papers.

Larry J. Horn-beck of TexasInstruments, Inc.won the IEEEDaniel E. NobleAward. His cita-tion states, “Forhis pioneeringwork and sus-tained develop-

ment of the Digital Micro mirror

Device, used in projection displays.”Dr. Larry J. Hornbeck, TI Fellow, led

the development of the Digital Micromirror Device (DMD), a microchip thatrevolutionized projection displays. TheDMD remains the most complex micro-electro-mechanical systems (MEMS)device in existence today. Texas Instru-ments in Plano, Texas, where Dr. Horn-beck has worked since 1973, isrecognized as a leader in the technology.

Thanks to its small size, high bright-ness and exceptional image fidelity, sta-bility and reliability, many of the world’stop display manufacturers market pro-jectors and big-screen TVs based on theDMD microchip for conference rooms,home entertainment, large-venues, anddigital cinema. After spending a decadeworking on new architectures for spatiallight modulators at Texas Instruments,Dr. Hornbeck invented the DMD in 1987.Products capitalizing on the technologywere shipped as early as 1996.

An array of fast, MEMS digital lightswitches monolithically integrated ontoa silicon address chip, the DMDmicrochip enables stable images withno perceptible flicker. Dr. Hornbeck’sleadership was pivotal to the project—from conceptualization to design of thesilicon structures to development of thecommercial manufacturing process,including allaying concerns about thecomplexity of the device and itsextremely low tolerance of processingdefects. Over the first decade of theDMD’s existence, Dr. Hornbeck partici-pated in numerous significant improve-ments targeted at performance,scalability, reliability and yield. As a tech-nical leader, he constantly challengedhis colleagues to continue the evolutionof the technology and its capability.

Larry J. Hornbeck was born on 17September 1943 in St. Louis, Missouri.He studied physics and solid-statephysics at Case Western Reserve Uni-versity in Cleveland, Ohio, earning hisdoctorate in 1974. He and his wife, Lau-ra, reside on their thirty-two acre proper-ty in the country, near Van Alstyne,Texas north of Dallas. They have twosons, Jason and David.

Dr. Hornbeck is an IEEE Member andInternational Society for Optical Engi-neering (SPIE) Fellow. He has receivedGermany’s Eduard Rhein FoundationTechnology Award, England’s RankPrize, North Texas Inventor of the Year,an Emmy Engineering Award from theAcademy of Television Arts & Sciences,

the Karl Ferdinand Braun Prize from theSociety for Information Display (SID),the Electronic Imaging Honoree of theYear award from the SPIE, and theDavid Sarnoff Medal Award from theSociety of Motion Picture and TelevisionEngineers. Dr. Hornbeck has authored orco-authored 27 publications and holds32 U.S patents.

Richard C. Jaegerfrom Auburn Uni-versity won the2004 IEEE Under-graduate TeachingAward. His citationstates, “For excel-lence in undergrad-uate teaching anddevelopment of

outstanding textbooks for courses inmicroelectronics.”

A dedicated professor, Dr. Richard C.Jaeger is hailed by students for his abil-ity to communicate complex conceptsin a simplified manner, relating abstractthought to real-world applications.

Distinguished University Professorand Electronics Stem Chair at AuburnUniversity in Alabama, Dr. Jaeger hasbeen a driving force behind engineer-ing curriculum development since1979. He also has also served as act-ing director of wireless engineeringsince 2001, and is leading the imple-mentation of the program’s new bach-elor of wireless engineering degree.

As founding director of Auburn’sAlabama Microelectronics Science andTechnology Center from 1984 to 2000,Dr. Jaeger championed the facility’sdevelopment. The center allows under-graduates to participate in and practiceevery step of fabricating microelectron-ic chips, an opportunity most oftenreserved for graduate students.

Dr. Jaeger has published morethan 200 technical papers and arti-cles. The textbooks he has written,Introduction to Microelectronic Fabri-cation and Microelectronic CircuitDesign, and co-written ComputerizedCircuit Design Using SPICE Programs(with Bogdan M. Wilamowski) arerapidly becoming standards through-out the world. His microelectronictexts have been translated into anumber of different languages.

Born on 2 September 1944,Richard C. Jaeger received his bache-lor’s and master’s degrees in electri-cal engineering in 1966, and hisdoctoral degree in 1969, all from the


University of Florida, Gainesville. Heworked for the IBM Corporation in anumber of capacities from 1969 to1979, including as staff engineer andadvisory engineer in Boca Raton,Florida, and a research staff memberat the IBM T.J. Watson Research Cen-ter in Yorktown Heights, New York.

An IEEE Fellow, Dr. Jaeger is VicePresident of the IEEE Solid-State Cir-cuits Society. He previously hasserved on the IEEE Solid-State CircuitsCouncil as president and member.Founding editor-in-chief of IEEEMicro, he is also past editor of theIEEE Journal of Solid State Circuits.

Dr. Jaeger holds three patents andhas received two Invention Achieve-ment Awards from the IBM Corpora-tion. His numerous honors include theIEEE Computer Society’s OutstandingContribution Award and Golden CoreRecognition, the IEEE Third Millenni-um Medal, the IEEE Education SocietyMcGraw-Hill/Jacob Millman Award foroutstanding textbook development,and Auburn University’s BirdsongMerit Teaching Award. He also wasselected as the 1993 Outstanding Elec-trical Engineering Faculty Member bythe electrical and computer engineer-ing students.

Krishna C. Sara-swat of StanfordUniversity won the2004 IEEE AndrewS. Grove Award.His citation states,“For seminal contri-butions to siliconprocess technology.”

Demonstratingvisionary leadership for more than 30years, Dr. Krishna Saraswat’s influence

extends from fundamental research ofsilicon oxidation to system-level stud-ies of wiring delays and chip perfor-mance. Consistently ahead of his time,he has made fundamental contribu-tions on device structures, new materi-als and process technology of silicondevices and integrated circuits. Thesecontributions have helped in continuedscaling of device dimensions andimprovement in the performance ofintegrated circuits. A Professor of Elec-trical Engineering and theRickey/Nielsen Professor of Engineer-ing at Stanford University in Stanford,California, Dr. Saraswat also serves asthe Associate Director of the NationalScience Foundation / SemiconductorResearch Corporation – EngineeringResearch Center for EnvironmentallyBenign Semiconductor Manufacturing.

Dr. Saraswat’s pioneering discov-eries have repeatedly resulted inseminal advances for industry. Oneimportant example is his early 1980swork in WSi2 polycide gate MOStechnology, in which he broke withprevailing trends to successfullyfocus on chemical vapor deposition(CVD) technology. He later developedan Al/Ti metallization process whichquickly became an industry standard.Dr. Saraswat has provided invaluableleadership on interconnect scalingand modeling/simulation, notablythrough his farsighted delineation ofthe RC delay in an article twodecades ago. In the late 1980s, hefocused on single wafer manufactur-ing, developing equipment and simu-lators for rapid thermal processing,deposition and etching. Since themid-1990s, Dr. Saraswat has beenworking on scaling MOS technology

to nm range and on new concepts of3-D integrated circuits with multiplelayers of heterogeneous devices. Healso is currently researching envi-ronmentally benign semiconductormanufacturing.

Born on 3 July 1947 in Pilani, India,Krishna Saraswat earned a bachelorof engineering degree in electronicsfrom the Birla Institute of Technologyand Science in Pilani, India, and aMaster of Science degree in electricalengineering from Stanford University.After two years with Texas Instru-ments in Dallas, Texas, he returned toStanford for his doctorate, completedin 1974, and to work as a researchassociate and subsequently as a pro-fessor in electrical engineering.

An IEEE Fellow and member of theElectrochemical and the MaterialsResearch Societies, Dr. Saraswat hasreceived the Electrochemical Society’sThomas D. Callinan Award and twogold medals for undergraduate excel-lence while attending the Birla Insituteof Technology and Science. He is theauthor or co-author of more than 400technical papers and is the recipient ofseveral Best Paper Awards, includingfrom the IEEE Electron Devices Meet-ing, the Annual Device Research Con-ference and from the Journal of theElectrochemical Society.

Dr. Saraswat resides in Saratoga,California, with his wife, Sonia andtheir two sons, Prashant and Vivek. Hisoutside interests include traveling, hik-ing, photography, music and tennis.

Al Mac RaeEDS Awards Chair


Effective 1 January 2004

Mark T. Bohr, Intel Corp, Hills-boro, OR, USAfor leadership in advancing CMOS log-ic technologies

Thomas J. Brazil, National Univer-sity of Ireland, Dublin, Irelandfor contributions to circuit level model-ing of non-linear devices

Kevin F. Brennan, Georgia Tech,Atlanta, GA, USAfor contributions to the modeling ofimpact ionization in heterostructuresand multiquantum well structures

Constantin Bulucea, NationalSemiconductor Corp., SantaClara, CA, USAfor contributions to transistor engineer-ing in the area of power electronics

Hsing-Yao Chen, Chunghwa Pic-ture Tubes, LTD, Fox River Grove,IL, USAfor contributions to electron gundesign for color cathode ray tubes

Denice Denton, University ofWashington, Seattle, WA, USAfor leadership in engineering educa-tion and faculty mentoring

34 EDS Members Elected to the

IEEE Grade of Fellow

34 EDS Members Elected to the

IEEE Grade of Fellow


Robert R. Doering, Texas Instru-ments, Inc., Dallas, TX, USAfor leadership in the development ofsub-micron CMOS and semiconductormanufacturing technology

Robert H. Eklund, Texas Instru-ments, Inc., Plano, TX, USAfor leadership in the development andmanufacturing of sub-micron CMOStechnologies

Hiromu Fujioka, Osaka University,Osaka, Japanfor contributions to electron beamtesting of semiconductor devices andcircuits

Stephen M. Goodnick, ArizonaState University, Tempe, AZ, USAfor contributions to carrier transportfundamentals and semiconductordevices

Erik H.M. Heijne, CERN, Geneva,Switzerlandfor contributions to semiconductordetector systems and radiation tolerantdetector readout electronics

Jerry Hudgins, University of SouthCarolina, Columbia, SC, USAfor contributions to the design, model-ing, and teaching of semiconductordevices for power electonics

Shuji Ikeda, Trecenti Technolo-gies, Inc., Ibaraki, Japanfor contributions to the developmentand manufacturing of static randomaccess memory

Hajime Ishikawa, Fujitsu Laborato-ries Ltd., Kanagawa, Japanfor technical leadership in the develop-ment of high-performance Si and GaAsdevices and circuits

Robert W. Jackson, University ofMassachusetts, Amherst, MA,USAfor contributions to the electromagnet-ic modeling of microwave integratedcircuits and packaging

Kenneth M. Lakin, TFR Technolo-gies, Inc., Bend, OR, USAfor contributions to thin-film resonatortechnology and applications

Colin C. McAndrew, Motorola,

Tempe, AZ, USAfor contributions to compact and statis-tical modeling of semiconductordevices

Meyya Meyyappan, NASA AmesResearch Center, Moffett Field,CA, USAfor leadership in the development ofnanoelectronic devices and processes

Alexander Nosich, Institute ofRadio-Physics and Electronics ofthe National Academy of Sciencesof Ukraine, Kharkov, Ukrainefor contributions to the applications ofcomputational electromagnetics toantennas and open waveguides

Hiroshi Nozawa, Kyoto University,Kyoto Prefecture, Japanfor contributions to nonvolatile semi-conductor memories

Mikael L. Ostling, KTH, Royal Insti-tute of Technology, Kista, Swedenfor contributions to semiconductordevice technology and education

Jerzy Ruzyllo, Pennsylvania StateUniversity, University Park, PA,USAfor contributions to ultrathin oxidationin microelectronic manufacturing

Victor Ryzhii, University of Aizu,Fukushima, Japanfor contributions to the developmentof quantum well infrared photodetec-tors and quantum dot infrared pho-todetectors

Nobuhiko Sawaki, Nagoya Univer-sity, Nagoya, Japanfor contributions to the development ofgroup III-nitride semiconductor materi-als and devices

Martin A. Schmidt, MIT, Reading,MA, USAfor contributions to design and fabri-cation of mircoelectromechanicalsystems

David B. Scott, Texas Instruments,Inc., Plano, TX, USAfor contributions to CMOS and BIC-MOS technology and circuits

Ninoslav Stojadinovic, Universityof Nis, Nis, Serbia & Montenegro

for contributions to the reliabilityphysics of metal-oxide-semiconductordevices

Roger W. Sudbury, MIT LincolnLaboratory, Lexington, MA, USAfor leadership in gallium arsenide inte-grated circuits

Christer M. Svensson, LinkopingUniversity, Linkoping, Swedenfor contributions to single phase clock-ing and high speed CMOS circuits

Stuart K. Tewksbury, StevensInstitute of Technology, Hoboken,NJ, USAfor contributions to telecommunica-tions and interconnections in high per-formance digital systems

Douglas P. Verret, Texas Instru-ments, Inc., Stafford, TX, USAfor leadership in the commercializationof bipolar and BiCMOS technologies

Dwight L. Woolard, US ArmyResearch Lab., Research TrianglePark, NC, USAfor leadership in the discovery anddevelopment of novel sensing method-ologies and advanced electronicdevices at terahertz frequencies

Shin-Tson Wu, University of Cen-tral Florida, Orlando, FL, USAfor contributions to liquid crystal dis-plays and tunable photonic devices

Katsumi Yoshino, Osaka University,Osaka, Japanfor contributions to organal electronicand optoelectronic materials

The Nominations of theFollowing IEEE Members WereEvaluated by EDS But theindividuals are Not CurrentMembers of EDSGary B. Bronner, IBM, HopewellJunction, NY, USAfor contributions to dynamic randomaccess memory technology

Ghavam G. Shahidi, IBM Micro-electronics, Hopewell Junction,NY, USAfor contributions to silicon-on-insulatortechnology products


Rajendra Singh of Clemson Universi-ty received the RTP Conference J.Gibbons Achievement Award 2003for his contribution to Rapid ThermalProcessing. The award was present-ed to Prof. Singh at the 11th Interna-tional Conference on AdvancedThermal Processing of Semiconduc-tors – RTP2003 in Charleston, SouthCarolina last September.

R. Singh received the award “forpioneering contributions to RapidThermal Processing.” Prof. Singh isrecognized as a promoter of RapidThermal Processing and especially sin-gle wafer processing since this tech-nology entered the semiconductormanufacturing fabs. He is one of thefirst to recognize the important differ-

ence in non-equilibrium thermal pro-cessing such as “photonic” effect. Prof.Singh wrote a review paper summariz-ing the aspects of rapid thermal pro-cessing which became a mandatoryreading for all newcomers to the field.

Dr. Singh is currently D. HouserBanks Professor and Director Centerfor Silicon Nanoelectronics at Hol-combe Department of Electrical andComputer Engineering Clemson Uni-versity. He received a Ph.D. in physicsfrom McMaster University, Hamilton,Ont., Canada, in 1979. He has pub-lished over 260 papers. He is a Fellowof IEEE, the Society of Optical Scienceand Engineering, the American Associ-ation of Advancement of Science andthe material information Society ASM.

Rajendra Singh Receives the RTP Conference

J. Gibbons Achievement Award

Rajendra Singh Receives the RTP Conference

J. Gibbons Achievement Award

Prof. Rajendra Singh, recipient of J. Gibbons AchievementAward 2003 with Co-chairs of 11th InternationalConference on Advanced Thermal Processing

Semiconductors (From left to right: Zsolt Nenyei, MattsonTechnology, R. Singh, Jeff Gelpey, Vortek Industries, B.

Lojek Atmel Corporation.)

Congratulations to the EDS Members RecentlyElected to IEEE Senior Member Grade!

Congratulations to the EDS Members RecentlyElected to IEEE Senior Member Grade!

Shahzad AkbarMark G. AllenMykhaylo I. Andriychuk*Bob AtwellMohamed H. BadawiJoan Bausells*Oliver BrandJeff D. BudeIqbal M. ChaudhryYves de CoulonGuido W. DietzMohamed A. DitaliWilliam A. DoolittleIan T. Ferguson

Roobik GharabagiElmer H. GuritzGarry J. HausfeldWilliam D. HuntBenjamin IniguezMohammad Rezwan KhanC. Christopher KlepperKelin J. Kuhn*Youngwoo KwonPui To LaiAlvin LS LokeBurhanuddin Yeop MajilisOleksandr Malik*Dong-Sun Min

Kenneth OSitthichai PookaiyudomDavid C. PottsShankarnarayana Ramaswamy*Partha RayWilliam R. Richards, Jr.Hrayr A. SayadianGregory A. SiminBruce E. Sohn*John W. SpargoGoran StemmeNoriharu SuematsuMamoru TerauchiXijin Tian

Luan C. TranOliver Werther*Walter WohlmuthGuo-Liang WuMeng-Chyi WuXiao Jie YuanOlga F. Zamorska*Truc Q. VuRobert A. WellerSteven E. WetterlingRichard L. WoodinKen H. WongViktor D. Yeryomka*

* = Individual designated EDS as nominating entity

If you have been in professional practice for 10 years, you may be eligible for Senior Membership, the highest gradeof membership for which an individual can apply. New senior members receive a wood and bronze plaque and a creditcertificate for up to US $25 for a new IEEE society membership. In addition, a letter will be sent to employers, recogniz-ing this new status.

For more information on senior member status, visit http://www.ieee.org/membership/grades_cats.html#SENIORMEMTo apply for senior member status, fill out an application at http://www.ieee.org/organizations/rab/md/smelev.htm.


Description: One year fellowshipsawarded to promote, recognize, andsupport graduate level study andresearch within the Electron DevicesSociety’s field of interest: The field ofinterest for EDS is all aspects of thephysics, engineering, theory and phe-nomena of electron and ion devicessuch as elemental and compoundsemiconductor devices, organic andother emerging materials baseddevices, quantum effect devices, opticaldevices, displays and imaging devices,photovoltaics, solid-state sensors andactuators, solid-state power devices,high frequency devices, micromechan-ics, tubes and other vacuum devices.

The society is concerned withresearch, development, design, andmanufacture related to the materials,processing, technology, and applica-tions of such devices, and the scientific,technical and other activities that con-tribute to the advancement of this field.

At least one fellowship will beawarded to students in each of the fol-lowing geographical regions everyyear: Americas, Europe/MiddleEast/Africa, Asia & Pacific.

Prize: US$5,000 to the student,US$1,000 grant to the student’s depart-ment, US$1,000 grant to the student’sfaculty advisor in support of the stu-

dent’s project, travel subsidy of up toUS$3,000 to each recipient to attendthe IEDM for presentation of awardplaque. The EDS Newsletter will fea-ture articles about the EDS GraduateFellows and their work over the courseof the next year.

Eligibility: Candidate must: be an IEEEEDS student member at the time ofnomination; be pursuing a doctoratedegree within the EDS field of intereston a full-time basis; and continuehis/her studies at the current institutionwith the same faculty advisor fortwelve months after receipt of award.Sponsor must be an IEEE EDS member.Previous award winners are ineligible.

Basis for Judging: Demonstration ofhis/her significant ability to performindependent research in the fields ofelectron devices and a proven historyof academic excellence.

Nomination Package:• Nominating letter by an EDS member• Two-page (maximum) statement by

the student describing his or hereducation and research interestsand accomplishments

• One-page biographical sketch of thestudent

• One copy of the student’s under-grad-

uate and graduate transcripts/grades.Please provide an explanation of thegrading system if different from theA-F format

• Two letters of recommendationfrom individuals familiar with thestudent’s research and educationalcredentials

Timetable:• Nomination packages will be due at

the EDS Executive Office no laterthan May 15, 2004

• Recipients will be notified by July15, 2004

• Monetary awards will be given byAugust 15, 2004

• Formal presentation of the awardswill take place at the IEDM AwardsCeremony in December 2004.

• Nominations packages can be sub-mitted by mail, fax or e-mail, but ahard copy must be received at theEDS Office.

Send completed package to:IEEE Operations CenterEDS Executive Office 445 Hoes Lane, Piscataway, NJ 08854USAhttp://www.ieee.org/eds/fellowshipFor more information contact:Christopher Salicco, EDS Executive [email protected] or 732-562-6549

FINAL CALL FOR NOMINATIONS2004 Electron Devices Society Graduate

Student Fellowship

FINAL CALL FOR NOMINATIONS2004 Electron Devices Society Graduate

Student Fellowship

The EDS Chapter of the YearAward is presented annually to rec-ognize an EDS Chapter for the quali-ty and quantity of the activities andprograms implemented during theprior July-June period.

On December 8, 2003, at the IEDMheld in Washington, D.C., the ED BoiseChapter received the 2003 EDS Chap-ter of the Year Award, which includeda certificate and check for $1,000. Theaward was received by officers of theBoise Chapter: Dr. Stephen Parke,Boise State University, University Liai-son; Fernando Gonzalez, Micron Tech-nology, Inc., 2003 Chapter Chair;Kunal Parekh, Micron Technology,Inc., 2003 Vice-Chair; and Dr. Salman

Akram, Micron Technology, Inc., 2004Chapter Chair. The Boise Chapter,formed in 1998, sponsored the 1stRegional Workshop on Microelectron-ics and Electron Devices (uE-ED) inOctober 2002, and the University/Gov-ernment/Industry Microelectronics(UGIM) Symposium in July 2003.Both conferences drew presentersand attendees from around the world.The next Regional Workshop onMicroelectronics and Electron Devices(WMED) will take place in Boise, Ida-ho, on April 16, 2004.

Cor L. ClaeysEDS Regions/Chapters Chair

IMECLeuven, Belgium

2003 EDS Chapter of the Year Award2003 EDS Chapter of the Year Award

EDS 2003 President, Steven J. Hillenius, presents theEDS Chapter of the Year Award to Kunal Parekh (2003

Vice Chair), and Stephen Parke (University Liaison) of theED Boise Chapter.


All the EDS chapters inIEEE regions 1, 2, 3 and7 (East coast of U.S. andall of Canada i.e., NorthAmerica East-NAE) wereinvited to the biennialChapters meeting heldon December 7, 2003 inconjunction with theIEDM at the WashingtonHilton and Towers Hotel,Washington D.C. Themain goal of the meet-ing was to establish aforum that facilitates forthe chapters in NAE toshare their experiences,issues and activities.Towards this end, achapter from each of the4 regions was invited tomake a brief presentation.

M. Ayman Shibib, the Chair of theNAE Subcommittee for Regions/Chapters(SRC) SRC-NAE welcomed the atten-dees and introduced the agenda, whichincluded an invited presentation fromthe ED Boise Chapter, the winner of theEDS 2003 Chapter of the Year Award.That was followed by a presentationfrom the CAS/ED North Jersey, EDWashington & Northern Virginia,ED/CPMT Orlando and ED/SSC Kitchen-er-Waterloo chapters. Then the Chair ledan open forum where issues and con-cerns of the chapters were discussed.Following is a synopsis of the meeting.

Kunal Parekh, representing the EDBoise Chapter, presented the activitiesof the EDS 2003 Chapter of the Yearwinner. The main points of his presen-tation: 1. The executive committee ofthe chapter included 10 people cover-ing important functions in the chapter,2. The activities of 2003 included anational symposium, several IEDMtutorials (via use of the EDS LendingLibrary) and a membership drive, 3.The plans for 2004 included a workshopwith short course, monthly invited talksfrom DL lecturers and local experts andsome social functions, including a pic-nic and a banquet.

Durga Misra, representing the NorthJersey Chapter (Region 1), highlightedtheir main activities. The North NJ Chap-ter in 2003 worked to cosponsor meet-ings with other societies of IEEE basedon the membership’s interest using the

EDS DL program. They offered 7 lec-tures that were well attended.

Murty Polavarapu, representing theED Washington/Northern VirginiaChapter of Region 2, gave an overviewof the chapter, their membership, activ-ities and some perspective on runningsuccessful chapter meetings. The mem-bership of the Chapter is a mix of gov-ernment, industry and academia. TheChapter sponsored a series of lectureson nanotechnology that was wellreceived. Murty also presented a per-spective on running a successful chap-ter meeting summarized in: 1. choose atopic of broad appeal, 2. find a suitablelocation for the meeting (e.g. a universi-ty), 3. publicize the meeting throughIEEE channels, 4. establish a websitethat reference the presented lectures.

Anwar Sadat, representing the EDOrlando Chapter of Region 3, gave anoverview of the chapter’s activities for2003. The chapter that included a varietyof topics like CMOS-MEMS integration,ESD protection, CMOS RF Ics, spon-sored several lectures. Future activitiesinclude lectures on the following topics:nanotechnology, optoelectronics,MEMS, CMOS device and IC reliability.

Arokia Nathan represented theED/SSC Kitchner-Waterloo Chapter inRegion 7 (Canada). He gave anoverview of the chapter and its activi-ties. The main activities of the chapterare around the University of Waterloowith good participation from studentmembers. The chapter sponsored a

solar cell car competi-tion, a series of 12 semi-nars on a variety oftopics and a Fall Semi-nar Series on Giga-to-Nano Electronics. For2004, the chapter isorganizing a new semi-nar series on FlexibleElectronics.

After the presenta-tions, the Chair of SRC-NAE, Ayman Shibib,and the Vice-chair, TedSargent, led an opendiscussion and askedfor input regardingchapter’s perspective onmembership participa-tion, interaction withchapter partners, inter-

action with IEEE local sections and oth-er issues.

All the chapters agreed that the EDSDL program is extremely helpful for thechapters and is and will remain a mainsource for their activities. Some chaptersexpressed some reservation about ask-ing DL lecturers to give a talk because ofthe burden on the lecturer or financialconsiderations. Some noted that partici-pation from industry is decreasing as theindustry went through a difficult timethe last few years and wondered aboutways to improve that. Also observedwas that the chapter chair was the onlyperson in the chapter’s executive com-mittee and thus had to carry out manytasks in a limited time.

In responding to the chapters’issues, Ayman encouraged the chap-ters not to be bashful about requestingDL lecturers and pointed out that theSRC-NAE has supported partially thefinancial burden in some cases. As forthe participation from industry, it wasproposed that chapters should think ofinducting members from industry forjoining the executive committee andparticipation in their meetings by con-sidering value-added activities fromindustry’s perspective, for example pro-viding relevant courses or workshopsor helping in career development activi-ties. For the interaction with partners,many chapters had minimal interac-tions with partners and it was clearsomething needed to be done to facili-tate that. Ayman pointed out that he is

EDS Regions 1-3 & 7 Chapters Meeting SummaryEDS Regions 1-3 & 7 Chapters Meeting Summary

Participants at the EDS Regions 1-3 & 7 Chapters Meeting


considering the appointment of severalVice Chairs whose main responsibilitieswill be to establish and monitor theinteractions of the chapters with thepartners. One Vice Chair will beappointed for each of the four regions.

To alleviate the burden of running allthe chapters activities by one person,and to make sure of continuity of succes-sion for chapter chairs, Ayman encour-aged the chapters to extend theirexecutive committees to many members

noting that the Boise Chapter, winner ofthe Chapter of the 2003 Year Award, had10 members on its executive committeewith well defined responsibilities.

To facilitate the interactions andcommunications of the chapters in theregion, one of the Vice chairs will alsobe appointed to establish a virtual com-munity for NAE and another Vice chairto promote educational activities withinNAE. The new appointments will beannounced shortly.

Overall, the meeting achieved itsobjectives and was helpful to the chap-ters and to the executive committee ofSRC-NAE, which received good feed-back from the chapters.

M. Ayman ShibibEDS SRC-NAE Chair

Agere SystemsAllentown, PA, USA

The visit to Kharkov andAlushta by Prof. Chen-nupati Jagadish, ourEDS Chapter partnerand EDS DistinguishedLecturer was held Sep-tember 14-21, 2003. Dur-ing his stay in Kharkov,Prof. Jagadish visitedthe Institute of Radio-Physics and Electronicsof the National Acade-my of Sciences ofUkraine (IRE NASU).The IRE Director, Acade-mician NASU VladimirYakovenko, briefly intro-duced Prof. Jagadish tothe Institute structureand scope of research.Then Prof. AlexanderNosich, EDS EastUkraine Joint Chapter Manager, guid-ed Prof. Jagadish through the Instituteand talked about its history (since1955) and major accomplishments inthe area of millimeter and sub-mil-limeter wave physics and technology.He also introduced Prof. Jagadish, aschapter partner, to the history andmajor activities of the Chapter.

The East Ukraine Joint Chapter wasestablished in May 1995 by the initia-tive of 16 grassroots IEEE members, asthe first in the ex-USSR IEEE chapterof the Antennas and Propagation Soci-ety. Next year it joined the ED, MTTand AES societies, and later the LEO,GRS, NPS and EMB societies. The fullhistory of the Chapter, including origi-nal documents, annual reports, andannouncements of forthcoming activi-ties, can be found at its Website,//www.rocket.kharkov.ua/euachapter.Today this is the largest IEEE chapter

in the Ukraine, a nation of 50-millionpopulation and strong scientific com-munity. It is not a surprise that it wasestablished in Kharkov, the secondlargest Ukrainian city (1.6 million) andthe hub of Ukrainian science and tech-nology. Kharkov is located in the East-North of Ukraine and boasts its199-years-old classical university, 23other university-level education estab-lishments, National Center for NuclearPhysics, 7 other R&D institutes ofNASU, and, what is most remarkable,a perfectly cosmopolite reputation.

The East Ukraine Chapter holdstwo regular international forums withEnglish as working language and a300-strong attendance: the KharkovSymposium on Physics and Engineer-ing of Microwaves, Millimeter andSub-Millimeter Waves (MSMW), andthe International Conference on Math-ematical Methods in Electromagnetic

Theory (MMET). Bothwill be taking placenext time in 2004 andcan be found throughthe Chapter Website.What is especiallyinteresting, this Chap-ter is the only one inthe Ukraine and proba-bly the ex-USSR, whichpractices competitiveannual elections of thechapter officers by thevoting of all members,with an IEEE-stylenomination, secret bal-lot, and tellers commis-sion. The electioninformation is availableonline and can be rec-ommended to the oth-er chapters in this part

of the world as an example to follow.Perhaps, the IEEE RAB/TAB shouldencourage this experience and dis-seminate it as wide as possible.

When visiting the IRE, Prof.Jagadish presented his distinguishedlecturer’s talk on “Quantum well andquantum dot intermixing for opto-electronic device integration”. Thiswas an exciting survey of the existingand prospective techniques for novelquantum electronic devices. Amongthem, there are multi-wavelengthsemiconductor lasers, WDM circuits,multi-color infrared detectors andother actively developed now ideasfor the emerging photonic applica-tions. The audience consisted of theIRE staff members, and alsoresearchers and students from vari-ous Kharkov laboratories and univer-sities. Prof. Jagadish replied to many

EDS Distinguished Lecturer/Chapter

Partner Visits East Ukraine



Professor Chennupati Jagadish visits Kharkov and Alushta in East Ukraine.

continued on page 29


USA, Canada andLatin America(Regions 1-6, 7 & 9)

USA, Canada andLatin America(Regions 1-6, 7 & 9)

ED Washington/NorthernVirginia- by Michael HurtThe Washington/Northern VirginiaChapter of the Electron Devices Soci-ety held its last two meetings of theFall Nanotechnology Series onNovember 6 and December 4, 2003 atthe Mitre Corporation campus inMcLean, VA. At the November meet-ing, Dr. Anantha Krishnan of theDefense Sciences Office of DARPAgave a presentation entitled “Nan-otechnology Applications - Biotechnol-ogy and Medicine.” Dr. Krishnanreviewed aspects of the DARPA pro-grams that address the integration ofbiological phenomena with MEMS andmicrofluidic technologies as well asnovel hybrid interfaces to convertinformation from the biological worldto electrical signals.

Ms. Deb Newberry, co-author ofthe recently published book, “NextBig Thing Is Really Small: How Nan-otechnology Will Change the Future ofYour Business”, spoke on societalimplications of nanotechnology at theDecember meeting. She shared manyof the observations gleaned from therecently concluded National ScienceFoundation Workshop on the samesubject.

2004 IEEE/SEMI AdvancedSemiconductor ManufacturingConference and Workshop- by Tom CarboneThe IEEE/SEMI Advanced Semiconduc-tor Manufacturing Conference (ASMC)and Workshop is an international con-ference sponsored by the IEEE ElectronDevices Society (EDS), the IEEE Com-ponents, Packaging, and Manufactur-ing Technology Society (CPMT), andSemiconductor Equipment andMaterials International (SEMI). ASMC2004 will be held May 2 – 4, 2004 atthe Seaport Hotel in Boston, Massa-chusetts. For general information andregistration on ASMC 2004, visithttp://www.semi.org/asmc, or contactMs. Margaret M. Kindling, SEMI Wash-ington, DC ([email protected])

ED/CAS North Jersey- by Dick SnyderProfessor Agis Illiadis of the Universityof Maryland and an EDS DistinguishedLecturer delivered a talk titled “HighPower Microwave Effects on ElectronicDevices and Circuits” at the ED/CASNorth Jersey Chapter meeting onNovember 3, 2003. The meeting washeld at the New Jersey Institute ofTechnology, Newark, NJ and 51 peo-ple attended. Professor Illiadis present-ed an overview of the researchactivities of his group at the Universityof Maryland in high frequency devicesand also highlighted EDS activities ingeneral.

ED/CPMT Orlando- by Anwar SadatThe ED/CPMT Orlando chapter held aseminar on “Electrostatic Discharge(ESD) Protection Structures inMicrochips” on September 10, 2003 atthe University of Central Florida. In histalk Dr. J. J. Liou from the Universityof Central Florida presented anoverview on the ESD and ESD protec-tion techniques and discussed a MOSmodel suitable for circuit simulationunder the ESD event. Finally, headdressed the design and optimizationof ESD protection structures for RFapplications.

The ED/CPMT Orlando chapter helda meeting on November 17, 2003 atthe University of Central Florida. Atthe meeting EDS Distinguished Lec-turer, Dr. Yuhua Cheng from Sky-works Solutions, Inc., presented a talkon “An Overview of Device Behaviorand Modeling Issues in CMOS Tech-nology for RF IC Design”.

Finally, the ED/CPMT SocietyOrlando Chapter hosted a booth at the11th IEEE International Symposium onElectron Devices for Microwave andOptoelectronic Applications (EDMO2003) held November 17-18 inOrlando.

~ Murty S. Polavarapu, Editor

ED Boise-by Fernando GonzalezThe 2004 EDS Boise Chapter Officershave a vision - a year of growth. The

Regional and Chapter NewsRegional and Chapter News

Prof. Agis Illiadis at the ED/CAS North Jersey Chapter Meeting

Dr. Yuhua Cheng at the ED/CPMT Orlando Chapter


new officers, led by Dr. SalmanAkram, are focused on involving newmembers in different chapter activi-ties. The Vice-chairs, Dr. Jeff Jessingand Dr. Tom Jiang, will organize theDistinguished Speaker Series and theShort Course Tutorial Series, respec-tively. Our 2004 Secretary, ZhipingYen, and Treasurer, Dr. Joseph Wang,will maintain our records in order.

Fernando Gonzalez will be the EDSChapter Advisor and the GeneralChair for the 2004 WMED “Workshopon the Microelectronics and ElectronDevices” on 16 April 2004, with thehelp of Kunal Parekh, Cynthia Brad-bury, Dave Daniel, and Dr. JosephWang. The WMED is the centerpieceof our program. Dr. Steve Hilleniuswill be the keynote speaker, and Dr.Gary Bronner and Dr. Howard Rhodeswill be invited speakers. The Call forPapers has gone out asking for con-tributing abstracts and papers thatcan be submitted by e-mail to [email protected] by Feb. 15th.

The Chapter of the Year Award hasmade our chapter more appreciativeof the role that each EDS memberhas. Also, we realize that there aremany other chapters equally worthyof such award. It is our challenge thatwe continue to better our chapter bybringing in new members with thehelp of William Kueber and trainingthem to do a good job. Dr. StephenParke will lead the Chapter’s Universi-ty Liaison activities, and Gail Hawkinswill lead the Chapter’s Corporate Liai-son activities.

National Engineers Week, Febru-ary 16-22, will be an opportunity for

the EDS Boise Chapter to advertise tothe other engineers. It will also be anopportunity to talk to high school anduniversity students to encouragethem to pursue engineering.

~ Sunit Tyagi, Editor

EUROPE, MIDDLEEAST & AFRICA(REGION 8)

MTT/ED/AP/CPMT/SSC WestUkraine -by Mykhailo I. AndriychukThe continuous cooperation betweenthe IEEE Poland and Ukraine Sectionsas well as their chapters was embodiedin the visit of Dr. Olga Zamorska, theWest Ukraine Chapter Secretary/ Trea-surer to the TelecommunicationsResearch Institute (TRI) and WarsawUniversity of Technology (WUT), War-saw, Poland October 13-17, 2003. Weare very thankful to Prof. MarianKazmierkowski, the IEEE Poland Sec-tion Chair, and Prof. Josef Modelski, theIEEE MTT-S Transnational CommitteeCo-Chairman for their efforts forthe organization of this visit. Dur-ing this visit, Dr. O. Zamorska pre-sented the distinguished lecture“Optimization of plane antennawith semitransparent aperture”at the TRI and the Institute ofRadioelectronics of WUT. In thelecture some questions of directand inverse problems formula-tion for the various types ofantennas with semitransparentboundaries were discussed. They

are: the fundamentals of cross-sectionmethod for solving the direct problems,the basic components of algorithm ofoptimization, the local variationsmethod, the cross-sections method andthe opposite directions method as wellas various optimization criteria andresults of numerical simulation.

The special meeting was devotedto the co-operation between the IEEEPoland and Ukraine Sections. In hisspeech, Prof. J. Modelski talked aboutthe policy of the IEEE MTT-S Transna-tional Committee to serve the IEEERegion 8 Sections and their Chapters.The examples of such servicesregarding the IEEE Poland Sectionwere presented in the talk of Prof. M.Kazmierkowski. Dr. Ye. Yashchyshyn,the West Ukraine Chapter representa-tive at the IEEE MTT-S Region 8 Chap-ter’s Chair Meeting, informed theattendees about the perspectives ofevolution of the European microwavecommunity discussed there.

The social program included thecity tour around Warsaw and the pos-sibility to become acquainted with itsmain sights: the Rynok Square, the

Juin Liou (left), EDMO 2003 General Chair, and Anwar Sadat(right), ED/CPMT Orlando Chapter Chair

WMED Tutorial

EUROPE, MIDDLEEAST & AFRICA(REGION 8)

Dr.Olga Zamorska visits the MTT/ED/AP/CPMT/SSC WestUkraine Chapter.


Kings Castle, etc. The excursion tourin the wonderful ancient city Krakowwas also organized.

MTT/ED/CPMT/COM/SSCNovosibirsk -by Viatcheslav P. ShuvalovA summary of the technical, profes-sional and business activity of theED/MTT/CPMT/COM/SSC Joint Novosi-birsk Chapter for the second half of theyear 2003 is as follows:

The 4th International Conference‘Microwave Electronics: Measure-ments, Identification. ApplicationMEMIA’2003’ was held in NovosibirskState Technical University fromDecember 23 to 26, 2003. This confer-ence attracted the interests of manyspecialists in the field of solid-stateelectronics, microwave electronics,communications, etc. The generalattendance was about 70. Last yearthis conference was held in Septem-ber, but we consider the tradition tohold such conferences in the winteras: new and very prospective. As aresult of the conference, the volume ofproceedings was issued. The IEEEED/MTT/CPMT/COM/SSC NovosibirskJoint chapter has provided the finan-cial support for organizing the confer-ence and printing the proceedings.

Our chapter presented material forthe International Trade-Industrial Exhi-bition ‘Sibsvyaz-2003’ (Novosibirsk,World Trade Center ‘Siberian Fair’,September, 2003). Our chapter alsomade presentations at the great sci-entific-practical forum ‘New Informa-tion Communication Technologies:

Achievements, Problems, and Perspec-tives’, which were held in SiberianState University of Telecommunicationand Informatics in September 2003.Our chapter provided technical andfinancial support for this forum as well.

Next year the IEEE NovosibirskState Technical University StudentBranch will celebrate its 5th Anniver-sary. Our chapter is planning to takepart in the organizing and celebratingof this jubilee. We are planning tohelp in establishing the IEEE Educa-tion chapter, which will be establishednext year in Novosibirsk. We are alsoplanning to participate in the 5th Inter-national Workshop and Tutorial onElectron Devices and MaterialsEDM’2004, which will be held at theNovosibirsk State Technical Universi-ty Conference Center ‘Erlagol’ July 1-5,2004. In general, we consider this yearas being successful and fruitful.

~ Alexander V. Gridchin, Editor

EDS DistinguishedLecturer/Chapter Partner VisitsHungary-by James B. KuoI visited the AP/ED/MTT/COM HungaryChapter, January 15-16. The ChapterChair, Professor Tibor Berceli ofBudapest University of Technologyand Economics gave me a warmreception. During the visit, I gave a lec-ture entitled Low-Voltage SOI CMOSVLSI Devices and Circuits. I also metwith about 15 professors, includingProf. Laszlo Zombora, who is the pres-ident of Hungarian Association for Infocommunications. I also visited their EDrelated research labs to see their

booming research activities. Duringthe visit, we discussed the promotingof EDS membership and activities. Inaddition, to its excellent location andgreat cultures, Hungary is full of high-quality high-tech manpower owing toits very successful education system.After becoming a member of the Euro-pean Union (EU) in May, the high-techindustry and research will be furtherenhanced.

ED Poland- by Andrzej Napieralski After the 10th International Confer-ence, “MIXED DESIGN OF INTEGRAT-ED CIRCUITS AND SYSTEMS” -MIXDES’2003”, which took place June26-28, 2003 in Lodz Poland, awardedpapers were published in the PolishJournal “Elektronizacja”, which issponsored by the ED Poland Chapter.Interesting papers from the conferencepresentations will be published in oth-er editions of this journal. Some cho-sen awarded papers have also beensubmitted to the Microelectronics Reli-ability Journal.

On November 3, 2003, Lodz,Poland there was a joint meeting ofthe Microelectronics Section of Elec-tronics and Telecommunication Com-mittee of Polish Academy of Scienceand ED Poland Chapter. During themeeting, Dr. Jan Dziuban from theWroclaw University of Technologypresented achievements of the Uni-versity in the area of chemicalMicrosystems. The idea of the jointmeeting was well received by bothgroups, and this kind of commonmeeting will continue in the future.

MEMIA’2003 General Chair, Prof. Victor Gridchin, isopening the conference

James Kuo with professors at Budapest University of Technology and Economics during theAP/ED/MTT/COM Hungary chapter partner visit on January 15


On November 6, 2003 the Instituteof Electron Technology in Warsaw,Poland organized a scientific meetingof the IEEE ED Poland Chapter, whereProf. Sorin Cristoloveanu (an EDSDistinguished Lecturer) from theCentre de Projets en Microélectron-ique Avancée presented a talk enti-tled “Advanced SOI Structures:Characterization and Mechanisms”.

The ED Poland Chapter co-orga-nized the 11th International Confer-ence MIXDES 2004, which will beheld on 26 June 2004 in Szczecin,Poland. During the conference twospecial sessions are planned:• “High Speed Networking” orga-

nized by Dr. Kris Iniewski, Silico-MOS, Canada

• “Advanced Compact Modelingand its Standardization” organizedby Dr. Wladyslaw Grabinski,MOTOROLA Geneva, Switzerland For the open of the plenary session

the following presentations areplanned:• “Diamond Technology for MEMS

and Electronics” (Prof. Erhard Kohn,University of Ulm, Germany)

• “Electronic Product Life-CycleDesign-For-Test: Status and FutureChallenges” (Dr. Ben Bennetts, Ben-netts Associates, United Kingdom)

• “Compact Modeling of Silicon Car-bide Power Devices” (Prof. H. AlanMantooth and Ty R. McNutt, Univer-sity of Arkansas, USA)

• “Development of IntegratedMicrosensors for Chemical And Bio-chemical Applications” (Prof. Salva-tore Baglio, University of Catania,Italy)

• “Mixed Mode Device and CircuitSimulation” (Stephan Wagner andProf. Siegfried Selberherr, Technis-che Universität Wien, Austria)During the conference, the ED

Poland Chapter and MicroelectronicsSection of Electronics and Telecom-munication Committee of the PolishAcademy of Science will take place.

Starting from this edition of theconference the “Information Technol-ogy” topic will be included. Moreinformation about the conference canbe found at http://www.mixdes.org.

The next joint meeting of the EDPoland Chapter and MicroelectronicsSection of Electronics and Telecom-munication Committee of the PolishAcademy of Science is planned during

the 8th National ELTE 2004 Confer-ence, which will take place in StareJablonki, Poland on 19-22 April 2004.

~ Andrzej Napieralski, Editor

Report on EDS Mini-colloquiumon SemiconductorNanotechnology, Bucharest-Romania, 17-18 November 2003-by Marcel D. ProfirescuProfessor Rajendra Singh of ClemsonUniversity, USA, the ED RomaniaChapter Partner, was scheduled to visitand give a distinguished lecturer thispast November. In order to have amore consistent technical meeting anda wider audience, Dr. Wim Schoen-maker of MAGWEL, (formerly withIMEC), was subsequently invited andtherefore a mini-colloquium was held17-18 November.

On 17 November, after a welcom-ing address by Marcel D. Profirescu,the EDS SRC- EAM Vice Chair, Profes-sor R. Singh presented the first lectureentitled: Nanotechnology: Hype andReality followed by the EDS 50thAnniversary tape: 50 Years in 50 Min-utes. There were almost 200 attendeesand the talks were followed by ques-tions and comments.

On 18 November, Dr. Wim Schoen-maker gave a talk entitled: HF Inter-connects and Passives Modelingfollowed by Rajendra Singh’s lecture:Semiconductor Manufacturing: Chal-lenges and Opportunity for Profitabili-ty and Sustained Growth. There wereabout 150 participants and many ques-tions and comments. Over the two-dayperiod, the participants included acad-emics, students and experts fromresearch institutions and industry.

The guests had a full program withtechnical and social visits and meet-ings, including the local Chapter andStudent Branch Chapter members.

Overall the mini-colloquium wassuccessful, and the audience hadthe chance to listen to more thanone DL in one place.

MTT/ED/AP/LEO UK&RI-by Terry OxleyIEEE International Symposium onElectron Devices for Microwave &Optoelectronic Applications(EDMO) - In its 11th year, EDMO-2003 was held for the first time inthe USA, at the Radisson BarceloHotel, Orlando, Central Florida on17 and 18 November 2003. TheUniversity of Central Florida andthe UK&RI MTT/ED/AP/LEO Chap-

ter sponsored the event, with technicalco-sponsorship from IEEE EDS and incooperation with IEEE MTT-S & LEOS,IEE UK and IOP UK.

The Symposium was hosted byProfessor Juin J Liou (Chairman),from the Department of Electricaland Computer Engineering, Universi-ty of Central Florida, Orlando, Flori-da. Professor Liou opened themeeting with a welcoming addressstressing the high quality of the sub-mitted papers and encouraged theparticipants to actively contribute tosession discussions. Special thankswere also given to Prof Ali A. Reza-zadeh who inaugurated the f irstEDMO symposium at King's CollegeLondon in 1993.

The technical sessions lasted twodays addressing important issues ofthe electron devices for microwaveand optoelectronic applicationsresearch. Papers were presentedfrom eighteen different countries andwere arranged in eight oral and oneposter sessions - 41 oral presenta-tions and 11 poster papers - coveringall aspects of modern SiGe, GaAs,InP, GaN, SiC devices ranging frommodelling over circuit simulation anddesign to system aspects. Emphasiswas placed on material growth andcharacterizations, wide-band gapmicrowave devices, Si and SiGedevices and circuits, device and cir-cuit modelling and technology andon microwave and photonic devicesas well as circuits.

Participants at the EDS Mini-Colloquium in Bucharest, Romania.


Prestigious Invited Speakers includ-ed papers on the topics of: “Novel wideband gap devices using strain energyband engineering” by Michael Shur,Rensselaer Polytechnic Institute, USA;“Progress and challenges of GaN-based microwave HEMTs amplifiersand novel spin devices” by StevePearton, University of Florida, USA; “L-band, high-efficiency 25 Watt poweramplifier for base station systems” byYeong-Her Wang, National Cheng KungUniversity, Taiwan; “Impact of semi-conductor technology scaling on CMOSradio” by Kwyro Lee, KAIST, Korea;“Recent advances in GaN HEMT devel-opment” by Frank Schwierz, TechnicalUniversity Ilmenau, Germany; “Highpower and high linearity electroabsorption analog RF link” by Paul Yu,UC San Diego, USA; “Review on ESDprotection for RF and microwave IC’s”by Albert Wang, Illinois Institute ofTechnology, USA; “Analysis of gatemisalignment effect on the thresholdvoltage of DG/FD SOI NMOS devices”by James Kuo, National Taiwan Univer-sity, Taiwan; “Multi-gate 3-D SOI MOS-FETs as the mainstream technology inhigh speed CMO applications” by Adel-mo Ortiz-Conde, Simon Bolivar Univer-sity, Venezuela; “CMOS RF devices andcircuit reliability” by Peter Yuan, Uni-versity of Central Florida, USA; “Anoverview of device behaviour and mod-elling of CMOS technology for RF ICdesign” by Yuhua Cheng, SkyworksSolutions, Inc., USA; “Silicon integratedphotonics: potentials and promises” byHei Wong, City University of HongKong, Hong Kong; and “Use of MeVion implantation for isolation of GaAsand InP-based HBTs” by Ali A Reza-zadeh, University of Manchester Insti-tute of Science and Technology(UMIST), Manchester, UK.

In addition to the technical ses-sions, the Symposium dinner washeld on Monday at a nearby restau-rant, providing a unique atmospherefor the delegates to discuss theirexperience and networking. In sum-mary, the meeting was considered tobe highly successful; it attractedmore than 70 delegates. The Sympo-sium Proceedings, containing morethan 300 pages, is available throughthe IEEE on-line Catalog (IEEE Cata-log No. 03TH8691, ISBN 0-7803-7904-7, Library of Congress 2003103734).

The next EDMO, EDMO-2004, in its12th consecutive year, will take placeat Gruger National Park, South Africafrom November 8-9, 2004, SouthAfrica, For further information, pleasecontact the EDMO 2004 ChairmanProfessor Lukas W Snyman, E-Mail:[email protected], or visit:www.edmo-symposium.org.

IEEE High Frequency PostgraduateStudent Colloquium (HFPSC) – HFP-SC-2004, the 9th in the series, will beheld at UMIST in Manchester UK onMonday 6th and Tuesday 7th Septem-ber 2004. Contributions are soughtfrom postgraduate students who areworking in fields relating to electro-magnetism, RF, microwave, mm-waveand optical technologies. For furtherdetails, please contact the 9th HFPSCChairman Dr Rob Sloan, E-Mail:[email protected], or the websitewww.ee.umist.ac.uk/mw/.

CHAPTER CHAIRMAN: For furtherinformation on Chapter news pleasecontact the Chapter Chairman: Ali ARezazadeh, Professor of MicrowaveEngineering, Dept. of Electrical Engi-neering and Electronics, University ofManchester Institute of Science andTechnology (UMIST), P.O. Box 88,Manchester M60 1QD, UK. Tel: +44 (0)161 200 4708 (Sec.4801). E-Mail:[email protected].

~ Gady Golan, Editor

ED Benelux-by Hans WallingaThe ED Benelux Chapter had a numberof technical meetings in 2003.

April 25, Seminar by Prof. MuchioTajima, Institute of Space and Astro-nautical Science, Sagamihara, Japan,“Characterization of SOI Wafers byPhotoluminescence Spectroscopy,Decay and Micro/Macro-Mapping”.Venue: the IMEC auditorium, IMEC,Leuven.

May 20, 2003: Seminar by Dr. ir.J.H. Klootwijk, Philips Research, Eind-hoven, “InP based HBT technology fornext generation microwave applica-tions”. Venue: University of TwenteBuilding EL/TN, Enschede.

November 25-26: SAFE workshop2003 in Veldhoven (jointly with STW)

For 2004 the following events havebeen held/are scheduled at thismoment:

16 January 2004, 14.00 hr, Seminar

by Dr. L.K.J. Vandamme, Eindhoven University of Technolo-

gy, “1/f Noise in MOSTs: Faster isNoisier”

Venue: University of Twente, Build-ing: Hogekamp (formerly EL/TN) roomnr. B 1220

11 and 12 October, GAAS 2004,Amsterdam (sponsored by IEEE, EDS)

24, 25 and 26 November 2004 (pre-liminary; jointly with STW) WorkshopSAFE/Prorisc, Veldhoven.

Members, planning to organizetechnical meetings in 2004 that mightfit to the interest of the ED BeneluxChapter are invited to contact thechapter chair: Prof. Hans Wallinga;[email protected]

University of Twente, PO Box 217,7500AE Enschede, the Netherlands.

~ Christian Zardini, Editor

ASIA & PACIFIC

(REGION 10)

ED/MTT India -by Dr. K.S. ChariA national seminar on “System onChip (SOC)” was organized at Shan-mugha Arts, Science, Technology andResearch Academy at Tamil Nadu dur-ing 27–29 November, 2003. The eventfeatured presentations covering: Evolu-tion, Trends and Opportunities in SOC;Design flow for IP Integration; MovingIndia up in the Semiconductor valuechain; Smart Sensors in SOC; Designfor test considerations in SOC; Insideinto the SOC design flow, modelingand simulating software definedradios; Embedded systems for SOC;Challenges to SOC designers in wire-less communication applications;Impact on nanometer related timingfailures on at-speed testing; Emergingtrends in 4G Wireless technologies;and Embedded Systems Design. Over80 participants attended the event fromindustry, academia and research com-munities. The event received majorfinancial support from the Ministry ofCommunications and InformationTechnology.

A National conference on the“Legal Issues in IT Industry – Tech-no-Legal 2003” was organized bythe Manufacturers Association ofInformation Technology (MAIT) Ban-

ASIA & PACIFIC

(REGION 10)


galore in association with the Chap-ter during 10-11 December. Theevent brought together representa-tives from semiconductor industry,legal councils and attorneys andresearchers at one forum to discussissues related to techno-legalaspects of the IT sector. Several leadtalks del ivered included: Legalissues for IT product companies;Opportunities for Indian Technolo-gies companies through alternativeinvestment; Issues for IT/ BPO com-panies; Doing business internation-ally, Data protection; Integratedcircuits design law; Managing out-sourcing contracts; and M&A in thetechnology industry. The eventbrought together over 100 partici-pants and was also supported by theMinistry of Communications andInformation Technology.

The Chapter Chair visited thePSNA College of Engineering andTechnology, REC Trichi and SASTRAand MS Ramaiah School ofAdvanced Studies in Bangalore. TheChapter Chair delivered talks onAdvances in Microelectronics: R&Dand teaching approaches; Issues inSystems on Chip; Intellectual Proper-ty Cores; Project Implementations atUG/PG in IT; and VLSI DesignMethodologies. A promotion of IEEE/EDS membership was also launchedat these venues. The Chapter had anexecutive meeting at REC Trichi on29 December.

For more information, please con-tact Dr. K.S. Chari, Director, Microelec-tronics & Photonics Division,Department of Electronics, C.G.O.Complex, New Delhi, India, Tel: 91-11-4361464; Fax: 91-11-4363082; email:[email protected].

AP/ED Bombay -by Prof. M.B. PatilOn 3 October, Ms. Saroj Pathak, Sub-micron Circuits, Inc (USA) gave a talkon “Future market and technologytrends for non volatile technology anddesign.”

The All India EDS Chapters’ Meetingwas held on 4 October at IIT Bombay.Dr. Renuka Jindal, Dr. M.K. Radhakrish-nan (Chapter partners for some of thechapters in India) and office bearersfrom the Bangalore, Bombay, Calcuttaand Delhi chapters attended the meet-ing. A variety of issues related to EDSactivities were discussed.

A Mini-Colloquium was held on 4October in which the following talkswere presented: (a) “RF MEMSDesign” by Navakanta Bhat, IndianInstitute of Science, (b) “Micro struc-tural damages induced by gate dielec-tric stressing in sub-micron devices”by Dr. M.K. Radhakrishnan, Singa-pore, and (c) “From multi bits to terabits” by Dr. Renuka Jindal, Universityof Louisiana at Lafayette.

Dr. Lajos Gazsi, Infineon Technolo-gies, Munich, talked on “System com-plexity in the semiconductorsindustry and its consequences” on 28November. Dr. Lucky Vishnubhotla,Motorola Philips-ST MicroelectronicsAlliance, Crolles, France talked onUltra thin plasma nitrated gate dielec-tric for 65nm CMOS platform” on 16December. On 23 December, Dr KarlBaringer presented a seminar on“MEMS micro-optical and micro-robotic actuators”.

For more information, please con-tact Prof. MB Patil, Electrical Engineer-ing Department, IIT Bombay, Powai,Mumbai 400076, India, Email:[email protected].

REL/CPMT/ED Singapore-by Dr. SH OngThe Singapore Chapter successfullyorganized the 3rdWorkshop and IEEEEDS Mini-colloquia on NanometerCMOS Technology (WIMNACT-Sin-gapore) on 15 October 2003 in Singa-pore. For details, please refer to theEDS Newsletter, Jan. 2004, Vol. 11,No. 1 reported by Xing Zhou and KinLeong Pey.

Mr. Chih-Hang Tung of the Instituteof Microelectronics (Singapore) pre-sented a technical talk on ULSI Semi-conductor Technology – A MicroscopicTour through TEM. Both graduate stu-dents and industry engineers showeddeep interests in the topic.

The Chapter also organized the5th Electronics Packaging Technolo-gy Conference (EPTC 2003), 10-12December 2003, Singapore. The con-ference had 150 selected technicalpapers presented in 28 sessions with4 parallel tracks. The conference waswell attended.

The Chapter Committee memberDr Xing Zhou has been appointed asan Editor of the IEEE EDS Newsletterfor 2004.

Charles Lee is elected as CPMTBOG for 2004.

For more information, please contactDr. SH Ong, Email: [email protected].

~ Wee Kiong Choi, Editor

ED/SSC Seoul - by Taegeun ParkIn 2003, the IEEE Seoul Chapter hostedthree talks by distinguished lecturers.Prof. Steve Kang, University of Califor-nia, Santa Cruz presented an interest-ing paper entitled, “Three High-TechTenors for the 21st Century,” at Korea

Delegates at the SOC seminar held at SASTRA, Tanjavur


University, Aug. 27, 2003. In this talk,important aspects of information tech-nology, nanotechnology, and biotech-nology were discussed with emphasison their synergistic engineering appli-cations. A chapter meeting followed thedistinguished lecture at the dinner tableto give the chapter members a chanceto get together with the distinguishedlecturers and to have close conversa-tions on selected topics. Prof. Vojin G.Oklobdzija, University of California,Irvine, presented another talk entitled,“Microprocessor Development Per-spective,” at the Korea University, Sep.17, 2003. He addressed advances inenabling technology and a perspectivefor the future development. The fea-tures, which enabled development ofmodern microprocessors and the guid-ing principles of modern microproces-sor architecture, were discussed. Prof.Vojin G. Oklobdzija presented anothertalk entitled, “High-Speed VLSI Arith-metic UNIT: VLSI circuits for arithmeticoperations, “critical path” optimization,implementation and algorithm,” atYonsei University, Oct. 31, 2003. Achapter meeting was held with chaptermembers after his presentation. As apart of annual support of the confer-ences, the Seoul Chapter sponsoredthe SOC Design Conference held atCoex, Asem Hall, Seoul, Korea, Nov. 5-6, 2003. The Seoul Chapter sponsored($300) for the “Best Student PaperAward” to recognize outstanding stu-dent authors, who published highquality papers in IEEE EDS and SSCSjournals. Two student authors (onefrom EDS and SSCS) have been select-ed for the prize with $200 cash. Theaward was presented at the SOCDesign conference. The IEEE SeoulChapter has held a chapter meeting ona bimonthly basis and also makes aneffort to promote membership byopening the membership develop-ment desk on local meetings.

ED Kansai - by Hiroyuki SakaiOn December 17 2003, an educationalmeeting was held at Osaka University,Osaka, Japan. This was the firstattempt to provide video lectures forthe Kansai Chapter members by tak-ing advantage of the EDS VideotapeLending Library. Five lectures fromthe short course of the 2002 IEDM

entitled “RF Device Technologies forCommunication Systems” werescreened. The meeting went over verywell with the participants, 13 in totalincluding 7 students. After this suc-cess, we have decided to hold a 2ndone on January 14 2004 and continueto provide this kind of meetingsthrough the year.

~ Hisayo S. Momose, Editor

Report on the 2003 IEEEConference on Electron Devicesand Solid State Circuits(EDSSC’03)-by Hei WongOn December 16-18, 2003, the ED/SSCHong Kong Chapter held the interna-tional conference: IEEE Conference onElectron Devices and Solid State Cir-cuits (EDSSC 2003), at the New WorldRenaissance Hotel. The goals of thisconference were to bring together sci-entists, engineers, and students to dis-cuss the latest achievements inelectron devices and solid-state circuitsand to facilitate interactions amonglocal researchers as well as their inter-national counterparts. This event wastechnically co-sponsored by the IEEEElectron Devices and Solid State Cir-cuits (ED/SSC) Hong Kong Chapter,IEEE Electron Devices Society, IEEESolid-State Circuits Society, IEEE HongKong Section and financially supportedby the K.C. Wong Foundation, theHong Kong University of Science andTechnology, Fong’s Family Foundationand Mr. Lim Por Yen.

EDSSC’03 continues a series startedin 1994 when the IEEE ElectronDevices Chapter was first established.The first 9 meetings were held underthe name Hong Kong Electron DevicesMeeting (HKEDM). The new name,introduced in 2003, reflects a broaden-ing of the Conference scope and theenhancement of the collaboration withthe solid-state circuits expertise and asa consequence of the establishment ofthe ED/SSC Hong Kong Chapter.

EDSSC’03 featured fifteen invitedtalks on timely and important topics

“Best Student Paper Award” in SOC designconference on Nov.5-6, 2003.

The educational meeting for Kansai Chapter members

Participants of the 2003 IEEE Conference on Electron Devices and Solid State Circuits (EDSSC’03)


like nanoelectronics, advanced mem-ory technology, power devices andcircuits, RF devices, and communica-tion circuits. The invited distin-guished speakers did not onlypresent interesting talks on topics ofcurrent importance, but also stimu-lated the discussion of the criticalissues of microelectronics from basicscience to the practical subjects.Even under the shadow of the SARSdisease, the response of theEDSSC’03 was still overwhelming.We had a significant number of inter-national submissions from 22 coun-tries or regions. After being carefullyreferred, a total of 110 high-qualitycontributing papers, covering broadareas and important topics in thefield of advanced microelectronicprocesses, devices and circuits, werefinally accepted for presentation inthe three-day program.

This year’s event was also speciallyorganized for celebrating the 10thAnniversary of the ED Hong KongChapter. During the past decade,many colleagues in Hong Kong and

friends from overseas have made sig-nificant contributions to the develop-ment of the ED Hong Kong Chapterand our local and international activi-ties. On this special occasion, theChapter presented the 10th Anniver-sary Award to Professor J. J. Liou(University of Central Florida, U.S.A.),Dr. P. T. Lai (University of Hong Kong)and Dr. M. C. Poon (Hong Kong Uni-versity of Science and Technology) fortheir “Outstanding Contribution to theDevelopment of ED/SSC Hong KongChapter”.

In addition to the technical pro-gram, we had arranged several non-technical events. On Tuesdayevening we hosted a traditional Chi-nese banquet and held the 10thAnniversary awards ceremony. OnWednesday evening, we arranged aboat trip around the Harbor and onthe boat the best paper awards werepresented. The Best Paper onDevices was given to M. -C. Cheng, L.Jun and M. Shen of Clarkson Univer-sity, USA (Paper title: Dynamic Ther-mal Circuit of SOI MOSFETs for Fast

Digital Operation). C. -H. Shih, Y. -M.Chen and C. Lien of National TsingHua University, Taiwan with theirpaper entitled “Design Strategy ofLocalized Heavy Doped Halo Profilefor Achieving Sub-50 nm Bulk MOS-FET" were awarded with the BestStudent Paper on Devices. S. Chen,O. Trescases and W. T. Ng of Univer-sity of Toronto, Canada and TexasInstruments, USA with their paperentitled "Fast Dead-Time LockedLoops for a High-Efficiency Micro-processor-Load ZVS-QSW DC/DCConverter” received the Best Paperon Circuits. The Best Student Paperon Circuits was “1.25-Gb/s 0.25-µ mCMOS Clock Recovery Based onPhase- and Frequency- Locked Loop”by Y. Hu and Z. -G. Wang of South-east University, China. On Thursdayafternoon, a local tour was arrangedto explore the different sides of theCity. Those functions had offeredexcellent opportunities to renewfriendships and make new acquain-tances for the participants.

~ Hei Wong, Editor

questions of the audience, about bothhis own research and research donein the Australian National Universityin Canberra.

In 2001, due to a significant increasein LEOS membership, an independentchapter was established in Kharkov.Both Kharkov chapters were the prima-ry organizers of the International Con-ference on Advanced Optoelectronics

and Lasers (CAOL-03) in Alushta, smallcity on the Black Sea coast of theCrimea, on September 16-21. The con-ference attracted some 150 participantsfrom the Ukraine, Russia, Europe,North America, Australia and Japan.Thanks to the use of English as theworking language and the niceMediterranean-type environment, Prof.Jagadish took part in CAOL-03 and pre-

sented an invited paper there. He wasthen seen to the airport in Simferopol,the main city of the Crimea, and flew tohis further destinations as an EDS Dis-tinguished Lecturer.

Anatoly KirilenkoED/AP/MTT/AES/GRS/NPS/EMB East Ukraine Joint Chapter IRE

NASUKharkov, Ukraine

The IEEE Electron Devices Societyand IEEE Reliability Society sponsorthe Reliability-Year-In Review semi-nar. The purpose of the seminar isto provide a clear concise summaryof some of the top papers on hottopics from the previous year alongwith experts to discuss and answeryour questions on each topic.

The 2004 seminar will be held 29April at the Hyatt Regency Phoenix atCivic Plaza, Phoenix, Arizona and thereview topics are: Failure Analysis;Transistor Stability; Product Reliability(User Perspective); Nanotechnology &Dielectrics. Registration for the semi-nar is $100.00 and to register go tohttp://www.irps.org/04-42nd/reg.html.

The 2003 seminar covered: Cu-Low kInterconnect Reliability, High-k Reliabili-ty, Non-Volatile Memory Reliability andESD. If you missed the 2003 seminar,you can order a DVD for $75.00. Visit theIRPS site at: http://www.irps.org/past-pub_sales.pdf for an order form and faxit to 315-336-9134, or call 877-772-7101,or email: [email protected].

Reliability – Year-In-Review SeminarReliability – Year-In-Review Seminar





continued from page 21


EDS Meetings Calendar(As of 20 February 2004)

EDS Meetings Calendar(As of 20 February 2004)

The complete EDS Calendar can be found at our web site:http://www.ieee.org/organizations/society/eds/meetings_calendar.html Please visit!

April 14 - 15, 2004, T Siberian Conferenceon Electron Devices and Materials, Location:TUSCR, Contact: Oleg Stoukatch, Tomsk StateUniv. of Control Systems & Radioelec, Tomsk, Rus-sia, E-Mail: [email protected], Deadline: 12/10/03,www: http://www.me.tusur.ru/~tieee

April 15 - 16, 2004, T Wireless andMicrowave Technology Conference,Location: Marriott Suite Hotel, Clearwater, FL, USA,Contact: Lawrence Dunleavy, University of SouthFlorida, E-Mail: [email protected], Deadline:1/15/04, www: http://www.wami2004.org

April 20 - 20, 2004, T Workshop on Photon-ics & Its Applications, Location: Cairo Universi-ty, Giza, Egypt, Contact: Said El-Khamy,Alexandria University, E-Mail: [email protected],Deadline: Not Available, www: Not Available

April 25 - 29, 2004, * IEEE International Reli-ability Physics Symposium, Location: HyattRegency Phoenix at Civic Plaza, Phoenix, AZ,USA, Contact: Bernie Pietrucha, Rowan University,E-Mail: [email protected], Deadline:10/24/03, www: http://www.irps.org

April 25 - 29, 2004, T Science & Technologyof Semiconductor-on-Insulator Structures& Devices in a Harsh Environment,Location: Sanatorium “Pushcha Ozerna”, Kyiv,Ukraine, Contact: Yuri Houk, Institute of Semicon-ductor Physics, NAS of Ukraine, E-Mail:[email protected], Deadline: 1/15/04, www:ht tp://www.dice.uc l .ac.be/NATO-ARW-SOI/NATO-ARW-SOI-fulldetails.pdf

April 26 - 27, 2004, T IEEE/Sarnoff Symposiumon Advances in Wired and Wireless Com-munications, Location: Nassau Inn, Princeton, NJ,USA, Contact: Henry Owen, Sarnoff Corporation, E-Mail: [email protected], Deadline: 10/30/03,www: http://www.sarnoffsymposium.org

April 27 - 29, 2004, @ IEEE InternationalVacuum Electronics Conference, Location:Double Tree Hotel, Monterey, CA, USA, Contact:Ralph Nadell, Palisades Convention Management,E-Mail: [email protected], Deadline: 1/5/04,www: http://www.ivec2004.org

May 4 - 6, 2004, * IEEE/SEMI AdvancedSemiconductor Manufacturing Conference

and Workshop, Location: The Seaport Hotel,Boston, MA, USA, Contact: Margaret Kindling,SEMI, E-Mail: [email protected], Deadline:9/18/03, www: http://www.semi.org/asmc

May 16 - 19, 2004, * International Confer-ence on Microelectronics, Location: Universityof Nis, Nis, Yugoslavia, Contact: Ninoslav Sto-jadinovic, University of Nis, E-Mail: [email protected], Deadline: 9/30/03, www:http://unitop.elfak.ni.ac.yu/miel

May 17 - 21, 2004, T International Confer-ence on Microwaves, Radar and WirelessCommunication, Location: Gromada Confer-ence Center, Warszawa, Poland, Contact: Elzbi-eta Sedek, Telecom Research Institute, E-Mail:[email protected], Deadline: Not Available,www: http://www.pit.edu.pl/MIKON-2004

May 18 - 20, 2004, T International High Tem-perature Electronics Conference, Location: Hiltonof Sante Fe, Santa Fe, NM, USA, Contact: R Johnson,Auburn University, E-Mail: [email protected],Deadline: 12/5/03, www: http://www.imaps.org/callfor/HiTEC2004.htm

May 23 - 26, 2004, T International PowerModulator Symposium, Location: RenaissanceParc 55 Hotel, San Francisco, CA, USA, Contact:Hulya Kirkici, Auburn University, E-Mail: hulya@[email protected], Deadline: 2/10/04, www:http://www.eng.auburn.edu/pmc2004/

May 24 - 27, 2004, @ IEEE InternationalSymposium on Power SemiconductorDevices & Integrated Circuits, Location:Kitakyushu International Conference Center,Kitakyushu, Fukuoka, Japan, Contact: TatsuoSakai, NTT Musashino R&D Center, E-Mail:[email protected], Deadline: 12/20/03,www: Not Available

June 1 - 4, 2004, T International Conferenceon Electron, Ion and Photon Beam Tech-nology and Nanofabrication, Location: SanDiego Marriott Hotel & Marina, San Diego, CA, USA,Contact: W Meisbruger, E-Mail: [email protected],Deadline: 1/7/04, www: http://www.EIPBN.org

June 1 - 4, 2004, T International Workshopon Expert Evaluation & Control of Com-pound Semiconductor Materials & Tech-

nologies, Location: ENSAM, Montpellier, France,Contact: S Contreras, E-Mail: [email protected], Deadline: Not Available, www:h t t p ://exma tec04 .ge s . un i v -mon tp2 . f r /welcome.php

June 6 - 8, 2004, T IEEE Radio FrequencyIntegrated Circuits Symposium, Location:Fort Worth Convention Center, Fort Worth, TX,USA, Contact: Stephen Lloyd, Skyworks SolutionsInc, E-Mail: [email protected], Deadline: 1/15/04,www: http://www.rfic2004.org

June 7 - 11, 2004, T European PhotovoltaicSolar Energy Conference and Exhibition,Location: Le Palais des Congres, Paris, France www:http://www.photovoltaic-conference.com/index.html

June 7 - 9, 2004, * IEEE International Intercon-nect Technology Conference, Location: HyattRegency at the San Francisco Airport, Burlingame,CA, USA, Contact: Wendy Walker, Widerkehr &Associates, E-Mail: [email protected], Dead-line: 1/9/04, www: http://www.his.com/~iitc

June 13 - 14, 2004, @ IEEE Silicon Nanoelec-tronics Workshop, Location: Hilton HawaiianVillage, Honolulu, HI, USA, Contact: WolfgangPorod, University of Notre Dame, E-Mail:[email protected], Deadline: 2/15/04, www:http://www.nd.edu/~ndnano/si-nano/

June 15 - 17, 2004, @ IEEE Symposium on VLSITechnology, Location: Hilton Hawaiian Village, Hon-olulu, HI, USA, Contact: Phyllis Mahoney, Widerkehr& Associates, E-Mail: [email protected], Dead-line: 1/7/04, www: http://www.vlsisymposium.org

June 17 - 19, 2004, T IEEE Symposium on VLSICircuits, Location: Hilton Hawaiian Village, Honolu-lu, HI, USA, Contact: Phyllis Mahoney, Widerkehr &Associates, E-Mail: [email protected], Dead-line: 1/7/04, www: http://www.vlsisymposium.org

June 21 - 23, 2004, T Device Research Confer-ence, Location: University of Notre Dame, NotreDame, IN, USA, Contact: Alan Seabaugh, Universityof Notre Dame, E-Mail: [email protected], Dead-line: Not Available, www:http://www.tms.org/meetings/specialty/DRC/2004/DRC-2004-home.html


June 21 - 25, 2004, T International Sympo-sium on Physics & Engineering of Millime-ter & Sub-Millimeter Waves, Location:Kharkov National University, Kharkov, Ukraine,Contact: Alexander Nosich, IRE NASU, E-Mail:[email protected], Deadline: 11/1/03, www:http://www.ire.kharkov.ua

June 24 - 26, 2004, T International Confer-ence on Mixed Design of Integrated Cir-cuits and Systems, Location: Hotel Orbis,Neptun S. A., Poland, Contact: Andrzej Napierals-ki, Technical University of Lodz, E-Mail:[email protected], Deadline: 2/29/04,www: http://www.mixdes.org/

June 26 - July 3, 2004, T Korea-Russia Inter-national Symposium on Science and Tech-nology, Location: Tomsk Polytechnic University,Tomsk, Russia, Contact: Sergey Kalganov, E-Mail:[email protected], Deadline: 3/29/04, www:http://korus.tpu.ru

* = Sponsorship or Co-Sponsorship Support @ = Alternates support between ’Sponsorship/Co-Sponsorship’ and ’Technical Co-Sponsorship’T = Technical Co-Sponsorship Support # = Cooperation Support

Description: Awarded to promote,recognize, and support meritoriousresearch achievement on the part ofRegion 9 (Latin America and theCaribbean) students, and their advisors,through the public recognition of theirpublished work in 2003, within the Elec-tron Devices Society’s field of interest:All aspects of the physics, engineering,theory and phenomena of electron andion devices such as elemental and com-pound semiconductor devices, organicand other emerging materials baseddevices, quantum effect devices, opticaldevices, displays and imaging devices,photovoltaics, solid-state sensors andactuators, solid-state power devices,high frequency devices, micromechan-ics, tubes and other vacuum devices.The society is concerned with research,development, design, and manufacturerelated to the materials, processing,technology, and applications of suchdevices, and the scientific, technicaland other activities that contribute tothe advancement of this field.

Prize: A distinction will be conferred inthe form of an Award certificatebestowed upon the most outstandingStudent Paper nominated for the year.The prize will be presented the follow-ing year at one of the EDS supportedconferences periodically held withinRegion 9. In addition to the recognitioncertificate, the recipient will receive asubsidy of up to $1,000 to attend theconference where the award is to bepresented. There will be a formalannouncement of the winner in afuture issue of the EDS Newsletter.

Eligibility: Nominee must be anIEEE EDS student member at thetime of nomination, be enrolled at aHigher Education institution locatedin Region 9. In the case of a co-authored paper, only eligible co-authors may be nominated. Papersshould be written in English on anelectron devices related topic.Papers should have been published,in full-feature form, during the yearin an internationally recognized EDSsponsored journal or conferencebook of proceedings. Statements bythe student and by the faculty advi-sor should accompany the nomina-tion. Nominator must be an IEEEEDS member. Previous winners ofthis award are ineligible.

Basis for Judging: Demonstration ofNominee’s significant ability to per-form outstanding research and reportits results in the field of electrondevices. Papers will be judged on:technical content merit, originality,structure, clarity of composition, writ-ing skills, overall presentation. Thesecriteria will be weighted by the assess-ment of the nominee’s personal contri-bution and the linkage of thenominated work to the nominee’scareer plans.

Nomination Package:• Nominating letter by an EDS member

(It may be the faculty advisor)• A brief one-page (maximum) bio-

graphical sketch of the student• 1000 words (maximum) statement

by the nominated student describing

the significance and repercussion of the nominated work within the wider scope of the nominee’s career plans.

• 400 words (maximum) statement by the faculty advisor under whose guidance the nominated work was carried out. It should unmistakably state the faculty advisor’s support of the nomination, and clearly explain the extent of the nominated stu-dent’s contribution, as well as its relevance for the overall success of the reported work.

• A copy of the published paper

Timetable:• Nomination packages will be due at

the EDS Executive Office no later than May 15, 2004

• Recipients will be notified by July 1, 2004

• Formal presentation of the awards will take place at the ICCDCS 2004 Awards Ceremony on November 3, 2004.

• Nominations packages can be sub-mitted by mail, fax or e-mail, but a hard copy must be received at the EDS Office.

Send completed package to:IEEE Operations CenterEDS Executive Office 445 Hoes Lane, Piscataway, NJ 08854USA

For more information contact:Christopher Salicco, EDS Executive [email protected] or 732-562-6549

CALL FOR NOMINATIONS

2003 IEEE Electron Devices Society Region 9

Annual Outstanding Student Paper Award

CALL FOR NOMINATIONS

2003 IEEE Electron Devices Society Region 9

Annual Outstanding Student Paper Award

At its 7 December 2003 meeting, theEDS Administrative Committee(AdCom) approved changes to theEDS Constitution & Bylaws concern-ing its election process and variousAdCom member titles. These amend-ments were then approved in January2004 by the Chair of the IEEE Techni-cal Activities Board (TAB) and will bereported to TAB at its February 2004meeting. The changes can take effect30 days following their publication inthis copy of the Newsletter (distrib-uted to all EDS members), unlessobjections are received by 5% of the

membership. The following is a sum-mary of the changes:• Officer Nomination and Election

Process – To have a two-year Presi-dent-Elect position instead of thecurrent 1 year (max. 2 terms) VicePresident position

• AdCom Nomination and ElectionProcess – To require that at leastone elected AdCom member is aGraduate of the Last Decade (GOLDMember)

• To change the title of various Stand-ing Committee Chairs (Awards, Edu-cational Activities, Meetings,

Membership, Publications andRegions/Chapters) to Vice President

• To change the title of the TechnicalCommittees Chair to Vice Presidentof Technical Activities The complete EDS Constitution and

Bylaws may be obtained from the EDSExecutive Office or on the web atwww.ieee.org/eds/ (click on Adminis-trative Committee).

Cary Y. Yang2003 EDS Nominations and

Elections ChairSanta Clara University

Santa Clara, CA, USA

Summary Of Changes To The EDSConstitution & Bylaws

Summary Of Changes To The EDSConstitution & Bylaws

James M. Early, Fellow of the IEEE andthe 1979 recipient of the ElectronDevices Society J. J. Ebers Award “ForOutstanding Technical Contributions toElectron Devices”, died in Palo Alto, CAon January 12, 2004.

He was born in Syracuse, NY onJuly 25, 1922 and received his Bachelorof Science degree from the New YorkState School of Forestry at SyracuseUniversity in 1943, served in the Armyand then received his Ph.D. in electricalengineering from Ohio State Universityin 1951. He then joined Bell Labs inMurray Hill, NJ where his first task wasto measure the performance of some ofthe first bipolar transistors made in BellLabs. During the 1950’s he made theo-retical contributions to the understand-ing of the performance of high-speedbipolar transistors. The “Early” effect,the finite collector-current-dependentoutput conductance due to base nar-rowing, continues to be an importantfactor in the modeling of bipolar tran-sistors. He remained in Bell Labs for 18years, eventually serving as a Laborato-

ry Director in both Murray Hill, NJ andAllentown, PA, with early responsibilityfor the development and transfer intomanufacture of integrated circuits.

Jim joined Fairchild Camera andInstruments in Palo Alto, CA in 1969 asDirector of the Fairchild Research Cen-ter. While there, he directed the devel-opment of integrated circuits andcharge-coupled devices, retiring in 1986.

In retirement, Jim continued hisinterest in devices, often attending the

EDS IEDM meetings in San Francisco.He gave the invited talk on “The Historyof Bipolar Transistors” at the 2002IEDM, celebrating the 50th anniversaryof the formation of the Electron DevicesSociety. He received 14 patents, mostlyon transistors and semiconductors. Iknew him as a gentleman who took thetime to explain the nuances of bipolartransistors to me. He was one of thevital contributors to the early under-standing and development of silicondevices and integrated circuits, tech-nologies that today continue to be thebasis of the fuel for the establishmentand growth of new products and newbusinesses at an impressive pace. Weowe much to Jim and his colleaguesfrom those early days.

Jim is survived by his wife MaryAgnes of Palo Alto, CA and eightchildren.

Alfred U. Mac RaeEDS Awards Chair


In Memory of James M. EarlyIn Memory of James M. Early

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