ELECTRON DEVICES SOCIETY IEEE ELECTRON DEVICES SOCIETY IIEEE ELECTRON DEVICES SOCIETY ... ·...

IEEE ELECTRON DEVICES SOCIETY IEEE ELECTRON DEVICES SOCIETY IEEE ELECTRON DEVICES SOCIETY EDS

LECTRONEVICESOCIETY

OCTOBER 2004 Vol. 11, No. 4 ISSN:1074 1879 Editor-in-Chief: Ninoslav D. Stojadinovic

Your Comments SolicitedYour comments are most welcome. Please writedirectly to the Editor-in-Chief of the Newsletter at

[email protected]

This year marks the 50th anniversary of the Electron Devices Society’sannual technical conference, the IEEE International Electron DevicesMeeting (IEDM). IEDM will be held in San Francisco, California, U.S.A. atthe Hilton San Francisco and Towers Hotel, December 13-15, 2004. It willbe preceded by a full day of Short Courses on Sunday, December 12.

A number of special events and functions are planned to commemo-rate the role the IEDM has played over the last half-century as theworld’s premier forum for cutting-edge research into electronic, micro-electronic, and now nano-electronic devices and processes.

Among them are a special historical poster session and eveningreception; a luncheon address by Prof. Richard Smalley, winner ofthe 1996 Nobel Prize in Chemistry; a commemorative DVD containingall past IEDM Technical Digests; and a retrospective plenary talk tobe given by Dr. Louis C. Parrillo, former Chief Technology Officer ofthe semiconductor products sector at Motorola, and a past IEDMGeneral Chair.

IEDM draws presentations and attendees from industry, academia,and governmental agencies worldwide. No other meeting presents asmuch leading work in so many different areas of microelectronics,encompassing both silicon and non-silicon device and process tech-nology, molecular electronics; optoelectronics; and MEMS (Micro-ElectroMechanical System) technology.

IEDM 2004 will offer a full slate of short courses, evening paneldebates, invited plenary talks and presentation of prestigious IEEE/EDSawards, in addition to the technical program.

Table of ContentsUpcoming Technical Meetings...................1

• 2004 IEDM • 2004 SISC

• 2004 CSICS • 2004 PVSCSpring 2004 EDS AdCom

Meeting Summary ............................................3IEEE Election – Did You Vote?.......................5EDS Announces “Revised” Membership

Fee Subsidy Program (MFSP)................10Society News ...................................................11• EDS Standing Committee Report – Awards

Committee• EDS Technical Committee Reports – Compact

Modeling and Vacuum Devices• 2003 EDS George E. Smith Award• 2003 EDS Paul Rappaport Award• Congratulations to the EDS Members Recently

Elected to IEEE Senior Member Grade!• EDS Members Named Winners of 2004 IEEE

Medals and Service Awards• 2003 IEEE Transactions on Semiconductor

Manufacturing Best Paper Award• EDS Distinguished Lecturers Participate in the 4th

WIMNACT – Singapore• Annual CD-ROM Packages Available to EDS

Members• 2004 EDS Region 8 Chapters Meeting Summary –

Madrid, Spain• How to Form an IEEE Student Branch and Student

Branch Chapter• OFAC – Where Are We Today?Regional & Chapter News ..........................20

EDS Meetings Calendar ..............................30

Report on the IEEE EDS EAM Mini-Colloquium – Madrid, Spain .........32

continued on page 7

2004 IEEE International

Electron Devices Meeting

To Celebrate 50th Anniversary

2004 IEEE International

Electron Devices Meeting


“San

Fra

ncis

co C

onve

ntio

n &

Vis

itors

Bur

eau.

”

eds1004.qxd 8/13/04 9:55 AM

2 IEEE Electron Devices Society Newsletter ❍ October 2004

President

Hiroshi IwaiTokyo Institute of TechnologyE-Mail: [email protected]

President-Elect

Ilesanmi AdesidaUniversity of IllinoisE-Mail: [email protected]

Treasurer

Paul K. L. YuUniversity of California at San DiegoE-Mail: [email protected]

Secretary

John K. LowellConsultantE-Mail: [email protected]

Jr. Past President

Steven J. HilleniusAgere SystemsE-Mail: [email protected]

Sr. Past President

Cary Y. YangSanta Clara UniversityE-Mail: [email protected]

Vice-President of Awards

Alfred U. Mac RaeMac Rae TechnologiesE-Mail: [email protected]

Vice-President of

Educational Activities

Ilesanmi AdesidaUniversity of IllinoisE-Mail: [email protected]

Vice-President of Meetings

Kenneth F. GallowayVanderbilt UniversityE-Mail: [email protected]

Vice-President of Membership

James B. KuoNational Taiwan UniversityE-Mail: [email protected]

Vice-President of Publications

Renuka P. JindalUniversity of Louisiana at LafayetteE-Mail: [email protected]

Vice-President of Regions/Chapters

Cor L. ClaeysIMECE-Mail: [email protected]

Vice-President of

Technical Activities

Mark E. LawUniversity of FloridaE-Mail: [email protected]

IEEE Newsletters

Paul DotoIEEE Operations CenterE-Mail: [email protected]

Executive Director

William F. Van Der VortIEEE Operations CenterE-Mail: [email protected]

Business Administrator

Christopher SaliccoIEEE Operations CenterEmail: [email protected]

IEEE Electron Devices Society Newsletter (ISSN 1074 1879) is published quarterly by the Electron Devices Society of the Institute of Electrical and ElectronicsEngineers, Inc. Headquarters: 3 Park Avenue, 17th Floor, New York, NY 10016-5997. Printed in the U.S.A. One dollar ($1.00) per member per year is included inthe Society fee for each member of the Electron Devices Society. Periodicals postage paid at New York, NY and at additional mailing offices. Postmaster: Sendaddress changes to IEEE Electron Devices Society Newsletter, IEEE, 445 Hoes Lane, P.O. Box 1331, Piscataway, NJ 08855-1331.

Copyright © 2004 by IEEE: Information contained in this Newsletter may be copied without permission provided that copies are not used or distributed fordirect commercial advantage, and the title of the publication and its date appear on each photocopy.

EDS AdComElected Members-at-Large

Elected for a three-year term (maximum two terms) with ‘full’ voting privileges

2004 Term 2005 Term 2006 Term

M. Estrada del Cueto (1) C.L. Claeys (2) S.S. Chung (1)K. F. Galloway (2) J.A. Dayton, Jr. (2) T. Hiramoto (2)S. J. Hillenius (2) M. Fukuma (2) L.M. Lunardi (2)C. Jagadish (2) F.J. Garcia-Sanchez (1) M. Lundstrom (1)J. K. O. Sin (1) K. Lee (2) A. Wang (1)R. Singh (2) J.J. Liou (1) H.S.P. Wong (2)N.D. Stojadinovic (1) M. Ostling (2) X. Zhou (1)

D.L. Pulfrey (2)

ELECTRON DEVICES

SOCIETY

ELECTRON DEVICES

SOCIETY

CONTRIBUTIONS WELCOMECONTRIBUTIONS WELCOME

Readers are encouraged to submit news items concerning the Societyand its members. Please send your ideas/articles directly to either the Edi-tor-in-Chief or appropriate Editor. The e-mail addresses of these individu-als are listed on this page. Whenever possible, e-mail is the preferredform of submission.

Newsletter DeadlinesIssue Due Date

January October 1stApril January 1stJuly April 1stOctober July 1st

REGIONS 1-6, 7 & 9

Eastern, Northeastern & South-

eastern USA (Regions 1, 2 & 3)

Murty S. PolavarapuBAE SystemsE-Mail: [email protected]

Central USA & Canada

(Regions 4 & 7)

Arokia NathanUniversity of WaterlooE-Mail: [email protected]

Southwestern & Western USA

(Regions 5 & 6)

Sunit TyagiIntelE-Mail: [email protected]

Latin America (Region 9)

Adelmo Ortiz-CondeUniversidad Simon BolivarE-Mail: [email protected]

REGION 8

Eastern Europe & The Former

Soviet Union

Alexander V. GridchinNovosibirsk State Technical Uni-versityE-mail: [email protected]

Scandinavia & Central Europe

Andrzej NapieralskiTechnical University of LodzE-Mail: [email protected]

UK, Middle East & Africa

Gady GolanThe Open UniversityE-Mail: [email protected]

Western Europe

Cora SalmUniversity of TwenteE-Mail: [email protected]

REGION 10

Australia, New Zealand & South

Asia

Xing ZhouNanyang Technological UniversityE-Mail: [email protected]

Northeast Asia

Hisayo Sasaki MomoseToshiba CorporationE-Mail:[email protected]

East Asia

Hei WongCity University of Hong KongE-Mail: [email protected]

Editor-In-Chief

Ninoslav D. StojadinovicUniversity of NisE-Mail: [email protected]

NEWSLETTER

EDITORIAL STAFF

NEWSLETTER

EDITORIAL STAFF

eds1004.qxd 8/13/04 9:55 AM

October 2004 ❍ IEEE Electron Devices Society Newsletter 3

President, Hiroshi Iwai, called theSpring 2004 meeting of the IEEE Elec-tron Devices Society to order on Sun-day, May 23 at the Mirasierra Hotel inMadrid, Spain.

Executive ReportsFollowing the approval of the December2003 AdCom minutes, President Iwaiaddressed the group outlining severalof the EDS goals for 2004 and there-after. For the last two years, EDS hasbeen developing a strategic plan forEDS (see EDS Newsletter, April 2004).Half-day meetings have been held atevery AdCom meeting since 7 June2002, spending the first two hours ofevery Executive Committee meetingdiscussing our strategic plan. As previ-ously reported, one of the outcomes ofthese meetings has been the EDS’ posi-tion statements, “To Broaden the Baseof Technical Areas of Interest” and,“Ensure EDS Activities Reflect the Cur-rent and Future Global Trends”. Morerecently, on 13 February at the TABMeeting in Savannah, GA, a few mem-bers of ExCom held a Strategic PlanningMeeting whereby the current positionstatements were reviewed and severalnew goals and projects were identified.These positions are as follows: (1) “Towork with the IEDM to increase industryparticipation at the meeting (possiblyinclude exhibitors) and to implement afew procedural changes to better pro-mote IEEE and EDS membership”, (2)“To include IEEE and EDS membershipinformation in the acceptance letters toauthors of manuscripts accepted by EDLand T-ED”, (3) “To show more apprecia-tion to EDS volunteers by increasing the

number of AdCom members awardedwith certificates when leaving office(e.g., Chapter Chairs and SRCChairs/Vice-Chairs)”, “Increase thenumber of Distinguished Lecturers(DLs) by insuring each technical com-mittee has at least ten speakers repre-senting their respective area, andincrease the DL budget”, (4)”Increasethe value of EDS membership by com-pleting the development of an archivalDVD of all past issues of EDL, T-ED andthe IEDM proceedings to be made avail-able at this year’s IEDM (at a cost of $30for members). Moreover, IEDM will begiving a free archival DVD of all pastIEDM proceedings to all attendees ofthe 2004 meeting, and (5) “Increaseboth the number of members fromindustry and the overall involvement ofindustry people.”

In the news, President Iwai reportedthat EDS, EDL, T-ED and the Newsletterhad their Five Year Review by the IEEETechnical Activities Board (TAB). Eachpublication fared well, but the final com-mittee report has not been received. Anew publication, Journal of DisplayTechnology, was approved by TAB. TheEDS AdCom had previously approvedto co-sponsor this publication, alongwith OSA, LEOS and a few other IEEEsocieties. Following a better thanexpected net revenue from the IEEEElectronic Library (IEL) and a late rallyby the investment market, the IEEE bud-get for 2003 closed with a surplus of$26.4M as opposed to a budgetedamount of $0.7M. Due to this positiveoutcome of the IEEE budget, the TABand EDS budgets for 2003 fared betterthan expected, as IEEE was able to

reduce the infrastructure charge andgive an investment credit to its variousentities. EDS ended the year with a sur-plus of about $877K instead of the nega-tive final budgeted amount of $230K. InApril, the TAB FinCom requested allsocieties to submit information con-cerning any adhoc initiatives that theyhave planned for 2005 and beyond. TABFinance will evaluate the impact of allthese proposals with an eye towardshaving societies collaborate their effortson any parallel initiatives. The Spring2005 EDS AdCom meeting is scheduledto be held in conjunction with the Trans-ducers - International Conference onSolid State Sensors, Actuators andMicrosystems at the Convention andExhibition Center (COEX) in Seoul,Korea on Sunday, June 5th.

Chair Reports Treasurer, Paul Yu, reported that EDSfinances look good for 2004 in the after-math of costly IEEE assessments of pre-vious years, and that the reserves areholding steady. EDS budgeted for a$107K net surplus for 2004, but the cur-rent forecast shows -$93.2K outcomedue to a lower net return from publica-tions (-$70K) and conferences (-$113K).[Note: all financial information withinthis report is in US$.]

Reporting for the EDS ExecutiveOffice, Bill Van Der Vort, presented alengthy list of Adhoc projects com-pleted since the December AdCommeeting. A few of the projects include;obtaining the necessary approvals tohave a President-Elect instead of aVice-President, and require that a leastone AdCom member be a Graduate of

Spring 2004 EDS AdCom Meeting Summary

Attendees at the EDS Spring AdCom meeting in Madrid, Spain

Spring 2004 EDS AdCom Meeting Summary

eds1004.qxd 8/13/04 9:55 AM


the Last Decade (GOLD); obtainingapproval for a the new Region 9 Out-standing Student Paper Award;preparation of documents for theTAB Five-year review of EDS and itsfully-owned publications (T-ED, EDL,EDS Newsletter); respond to TABdraft report concerning the EDSreview; hiring a consultant to analyzethe EDS survey results and make rec-ommendations on improving EDSand better serving its members; help-ing to develop an industry mailinglist to advertise the EDS Short CourseProgram; coordinating EDS’ partici-pation in IEEE’s pilot project of offer-ing web-based short courses calledthe Xplore Enabled Learning Library(XELL); performed an analysis of thecosts and sales associated with theshort course videotapes to determineif the business should be continued;worked with IEDM to include manu-script acceptance letters on its regis-tration form and website; modifiedthe EDL and T-ED acceptance lettersto encourage authors to join IEEEand EDS; and participate in the IEEE’sall society renewal survey project todetermine why members drop theirsociety membership; continued toadd changes in EDS’ Newsletterdesign, color, and content; convertedto IEEE’s new web software whichenables updates to be easier; contin-ued the scanning and digitization ofpre-1988 issues of T-ED, EDL and theIEDM proceedings; developed a pro-posal with the IEDM and Parity Com-puting to produce (in time for the2004 IEDM) an archival ‘IEDM only’DVD as well as a two-DVD set of EDL& T-ED and the IEDM Proceedings. Inaddition, the Executive Office teamcontinues to coordinate initiativesthat might increase both the reader-ship and number of manuscripts forT-DMR, and prepared documentationfor a review of T-DMR by the IEEEFinCom and the IEEE PeriodicalsReview Committee to decide if T-DMR can receive its full share ofASPP income.

Between now and December someadditional projects will include chang-ing the December 2004 election torequire that at least one AdCom mem-ber be a GOLD candidate, coordinat-ing the selection and award grantingfor the Region 9 Student Paper Award,

preparing a response to the TAB Peri-odicals Review Committee for EDL, T-ED, and the Newsletter, working withthe Industrial Relations Committee tomake recommendations on betterserving the membership, composeslides which promote EDS member-ship for use at the Industry ShortCourses, continue EDS’ participationin the XELL program, expand thenumber of Distinguished Lecturers byrequesting that each of the technicalcommittees have at least ten lecturersrepresenting their respective area,complete study to assess whether ornot to continue making and sellingShort Course videotapes, add changesto the Membership Fee Subsidy Pro-gram for the 2005 billing cycle, imple-ment cost savings changes to the EDSSenior Member Program, coordinatewith IEDM to add ‘EDS Member” andIEEE Grade on IEDM badges of all EDSmembers, continue EDS Newsletterimprovements, continue all tasks forthe EDS Digitization project, coordi-nate production of EDS DVDs andmake available with IEEE Publications,all years of T-ED, EDL, and IEDM on-line through Xplore for EDS members.

Vice-President of Regions/Chapters,Cor Claeys, listed the ED University ofCampinas Student Branch (Brazil) as thefirst new EDS chapter scheduled forapproval in 2004 with twenty one chap-ters currently in-progress to be formed.Today, the current number of world-wide chapters is 110.Additional committeeactions are the estab-lishment of an EDSRegion 9 OutstandingStudent Paper Award,and the appointment ofnew SRC Vice Chairs,namely Durga Misra(R1), Murty S. Polavara-pu (R2), Juin J. Liou(R3), Arokia Nathan (R7),and Enrico Sangiorgi(R8). The DistinguishedLecturer (DL) programcontinues worldwide.However, both the num-ber of lecturers (106)and the number of lec-tures scheduled for 2004(76) will be lower thantheir respective 2003 lev-els according to Ilesanmi

Adesida, Vice-President of Education.The EDS Graduate Student FellowshipProgram has rebounded from 2003when there were no nominees fromRegion 8. This year an impressive list ofsixteen nominees from all over the worldhas been received. After an update onIEEE EAB’s Xplore-Based EducationalProducts Initiative (started in July2003), Ade discussed a new subcom-mittee headed by Leda Lunardi onincreasing student attendance andinvolvement in IEDM. Among the com-mittee’s plans are the establishment ofa new criteria for student IEDM papers,reduced rates for students at confer-ences & short courses, posting thepaper that wins the IEDM StudentPaper Award on the IEDM website,appointment of student co-chairs forsessions, holding workshops/tutorialsaimed at students or early career engi-neers, and informal recruiting sessionsfor students only. A new EDS/IEDM col-laboration to increase EDS’ visibilityand promotion was also outlined. Sug-gestions for this new directive areincluding information about how to joinIEEE and EDS on the paper acceptanceletters to authors, including informationon IEEE and EDS membership on theIEDM conference registration forms,possibly have exhibitors at IEDM, and,for EDS members only, adding EDSMember and IEEE grade on individualIEDM badges. AdCom also approved amotion to insert in an upcoming issue

Renuka Jindal, Vice-President of Publications gives the EDS PublicationsCommittee report to the EDS AdCom.

eds1004.qxd 8/13/04 9:55 AM


of the EDS Newsletter, instructions for forming a newstudent chapter.

Renuka Jindal, Vice-President of Publications,reviewed his group’s efforts in establishing policies,procedures, & guidelines, performance metrics, publi-cation costs, digitization, author recognition, IEEE Pressrelations, and all-electronic processing standards. Onthe nanotechnology side, Renuka reported that theNanotechology Council (NTC) would increase the rateof diversification by adjustments in the editorial boardto minimize the overlap between T-ED and Transac-tions on Nanotechnology (TNT). Doug Verret will heada subcommittee to look at EDS’ nanotechnologyinvolvement. Addressing the EDS DVD project, Renukasummarized the expenses for producing a 2-DVD Set ofIEDM (1955-2004), T-ED (1954 -June 2004) and EDL(1980 -June 2004) and will include SSC metadata forVLSI Symposium (1988-2003), ISSCC (1955-2003), &JSSC (1966-2003). The total cost for completion of thisproject is $185.3K. A second, “IEDM Only” DVD will beproduced for distribution at the 2004 IEDM Conference.

New EDS Vice-President of Technical Activities, MarkLaw, reviewed the goals the technical committees.Specifically, the technical committees will identify newtechnical areas, assume responsibility for updating theIEEE New Technology Directions Committee’s HomePage, provide inputs for the Spectrum Magazine’s annu-al technology issue, initiate the start of new or modifyexisting technical meetings or publications for “HotAreas” of technology, coordinate and provide supportfor meetings, and suggest speakers/panels/short cours-es to IEDM. In addition, the committees will insure theSociety has sufficient coverage of its respective field inits journal, provide a liaison to other technically - relatedsocieties, and IEEE Staff, and direct awards and fellownominations as appropriate.

Technical Committee (TC) ReportsNarain Arora’s Compact Modeling TC reported confer-ence involvement for 2004, which includes a workshopon Compact Modeling (Boston, March 2004) and a Sym-posium on Compact Modeling (Santa Clara, June 2004).A new on-line Journal of Compact Modeling is seekingapproval. However, Narain reports that there has beenlittle progress in collaborative work between Foundriesand development of compact models at universities. Themeeting closed with short reports from Jim Dayton onthe Vacuum Devices TC, and the SRC Chairs from NorthAmerica West, Latin America, and Asia-Pacific.

The next meeting of EDS AdCom will be on SundayDecember 12, 2004 in San Francisco at the 2004 IEDM.

John K. LowellEDS SecretaryLowell ConsultingDallas, TX, USA

Position Candidates

IEEE – President-Elect, 2005 Michael R. Lightner

Levent Onural

James M. Tien

Division I Delegate Elect/ Steven J. Hillenius

Director 2005 H. Scott Hinton

Hari C. Reddy

Region 2 Delegate-Elect/ Satish Aggarwal

Director-Elect 2005-2006 Parvis Famouri

John Dentler

Region 4 Delegate-Elect/ Robert J. Dawson

Director-Elect 2005-2006 James N. Riess

Region 6 Delegate-Elect/ Loretta J. Arellano

Director-Elect 2005-2006 Sundaran K. Ramesh

Region 10 Delegate-Elect/ Jakkampudi A. Chowdary

Director-Elect 2005-2006 Marzuki B. Khalid

Janina Mazierska

Standards Association Board Jean M. Baronas

of Governors Member-at-Large Steven M. Mills

2005-2006

Standards Association Board George D. Gregory

of Governors Member-at-Large Raymond Hapeman

2005-2006

Technical Activities Vice Celia L. Desmond

President-Elect, 2005 James D. Isaak

Phillip T. Krein

IEEE-USA President-Elect, Charles P. Rubenstein

2005 Peter S. Winokur

Ralph W. Wyndrum, Jr.

IEEE-USA Member-at-Large, Donald C. Herres

2005-2006 James M. Howard

Election ballots with biographies of the candidates weremailed out September 1 to all IEEE voting members and thedeadline for the submission of your ballot is November 1,2004. For more information concerning the election (includ-ing biographies), please visit the IEEE website atwww.ieee.org/corporate/elections/candidates.xml

This is a reminder for EDS members to vote in the 2004IEEE Election for the following positions and candidates.

IEEE Election –

Did You Vote YET?

IEEE Election –

Did You Vote YET?

eds1004.qxd 8/13/04 9:55 AM


Upcoming Technical MeetingsUpcoming Technical Meetings

The wireless and optical fibermarkets are roaring back to life.The lifeblood of these marketshave been the high performanceintegrated circuits typically madein compound semiconductortechnology. GaAs, SiGe, InP, SiC,and more recently GaN and anti-monides, have been makingimpressive strides in perfor-mance, availability and features.However, the recent market lullhas given RF CMOS a chance tomake inroads into some opportu-nities that were previously thesole purview of III-V semiconduc-tors. The Compound Semicon-ductor Integrated CircuitSymposium (formerly the GaAs ICSymposium) offers the premier van-tage point to stay abreast of thesedevelopments in critical compoundsemiconductor technology and cir-cuit techniques. This year, our 26th,the symposium will be held from 24-27 October in Monterey, its homeaway from home, in the PortolaPlaza Hotel overlooking MontereyBay. The Symposium is co-locatedwith CS-Max with a unified CS-Week2004 Technology Exhibition. CS-Max will offer a distinct manufactur-ing oriented technical program thatwill follow the CSICS technical pro-gram 27-30 October.

If you work or are interested incompound semiconductor technol-ogy and mult i -GHz c ircui ts andwant to keep abreast of develop-ments in your specialty or in com-peting technologies, then this is theconference for you. Exciting newdevelopments from a variety ofcompound semiconductor disci-plines will be presented. Our newname reflects the diversity of mate-r ia ls technology that current ly

exists and is of interest to ourattendees. There are papers onGaN, SiC, SiGe, InP and of courseGaAs as well as other less wide-spread technologies. There is onceagain a tremendous amount ofactivity in the wireless and opticalcommunication areas, as well as astrong showing in defense electron-ics. For the first time, we will holdan entire technical session on cir-cuits with data rates beyond 100Gb/s. In keeping with our long tradi-tion as a forum for microwave andmillimeter wave and multi-Gb/s cir-cuits and not just as a showcase forGaAs or InP, we will hold an entiresession on Si-based tranceivers andhave our first-ever presentation on40 Gb/s CMOS.The technical pro-gram for IEEE CSICS consists of oneday of short courses given by notedexperts and three days of invitedand contributed technical presenta-t ions in the areas of compoundsemiconductor technology, RFdevices and circuits andDigital/OEIC circuits. There are morethan 64 technical papers, five panel

sessions, an Industry Exhibit, andtwo Short Courses, “PowerAmplifier Technologies and Mar-kets for Compound Semiconduc-tors” and “High Speed DataConverters.” We wil l also beoffering our annual introductorylevel class “Basics of CompoundSemiconductor ICs” (PrimerCourse). This year we have invit-ed 22 papers on a wide range ofimportant topics encompassingdevice engineering to circuitapplication using advanced com-pound and other related semi-conductor technologies. Inaddition, we will continue the tra-dit ion of including important

“late breaking news” papers. It is no surprise that Monterey is a

favorite venue among our attendees.The Portola Plaza Hotel (formerly theDoubletree) is located on pic-turesque Monterey Bay and is withinwalking distance of numerous shops,galleries, Fisherman’s wharf, Can-nery row and, for the more physical-ly f it , the Monterey aquarium.Attendees and guests can enjoy thefresh seafood, play golf at one of 17world-class courses or just enjoy oneof the most picturesque towns alongCalifornia’s coast. The more adven-turous can seek out some of themost spectacular scenery along theCalifornia coast just a short drivesouth of Monterey at Big Sur.

For registration and other infor-mation, please visit our website athttp://www.csics.org. We hope thatyou wi l l jo in us in Monterey inOctober.

Marko SokolichCSICS 2004 Publicity Chair

HRL LaboratoriesMalibu, CA, USA

2004 IEEE Compound Semiconductor Integrated

Circuit Symposium (CSICS), (formerly the

Gallium Arsenide IC Symposium, GaAs IC)

2004 IEEE Compound Semiconductor Integrated

Circuit Symposium (CSICS), (formerly the

Gallium Arsenide IC Symposium, GaAs IC)

eds1004.qxd 8/13/04 9:55 AM

The 2004 IEEE Semiconductor Inter-face Specialists Conference (SISC) willbe held December 9-11, 2004 in SanDiego, CA, immediately prior to theIEDM. The SISC provides a uniqueforum for device engineers, solid-statephysicists, and materials scientists todiscuss issues of common interest.Principal topics for discussion at SISCare semiconductor/insulator inter-faces; the physics of insulating thinfilms, and the interaction among mate-rials science, device physics, andstate-of-the-art technology.

This year will be the 35th meetingof SISC. The first meeting was held in1965 and attendance was by invita-tion. The conference, now public,alternates between the east and westcoasts, and meets just before theIEDM in San Francisco. An importantgoal of the conference is to provide anenvironment that encourages inter-play between scientific and technolog-ical issues. Invited and contributedtalks, as well as a lively poster ses-sion, are presented in an informal set-ting designed to encouragediscussion, and conference partici-pants enjoy numerous opportunitiesfor social gatherings with renown sci-entists and engineers. Abstracts forcontributed talks will be due in mid-July (see website listed below formore information).

The 2004 SISC will be held at theCatamaran Resort Hotel, 3999 Mis-

s ion Boulevard, San Diego, CA92109, phone 1-800-422-8386. TheCatamaran is on Mission Bay, andone block from the Pacific Ocean(see photo). San Diego typically hasfabulous weather, which comple-ments the Catamaran’s luxuriousHawaiian decor. The hotel groundsare beautifully lush with colorfulfish and tropical birds. San Diegoalso boasts Sea World™, a world-class zoo and historic monuments,all within an easy drive from theCatamaran. Bike and boat rentalsare offered on the Catamaranpremises.

The conference emphasis is onsilicon-based devices, including thehigh-k dielectrics, metal gates, SiC,SiGe and nanocrystal systems, andother topics that evolve with thestate-of-the-art. There will be invit-ed and contributed talks, comple-mented by informal eventsdesigned to encourage lively discus-sion and debate. Generous hospital-ity allows attendants to focus onenjoying the conference. Horsd’oeuvres, wine, and cheeseencourage interaction among posterauthors and other conference partic-ipants at Thursday’s poster session.Friday afternoon has no scheduledtalks, to allow time to meet infor-mally, relax on the beach, or visitone of San Diego’s numerousattractions. On Friday evening the

conference hosts a banquet andawards ceremony, complete withthe now-famous (and alwaysriotous) limerick contest. The limer-icks never fail to give the confer-ence presentat ions, people andevents an entirely new perspective!

This year’s SISC will continue thetradition of presenting an awardmemorializing Prof. E. H. Nicollian.The award will be given for the beststudent presentation. Ed Nicollianwas a pioneer in the exploration ofmetal oxide semiconductor (MOS)systems. His contributions wereimportant to establishing SISC in itsearly years, and he served as theTechnical Chair in 1982. With JohnBrews, he wrote the definitive bookMOS Physics and Technology.

For registration information andgeneral inquiries about SISC, pleasecontact the Arrangements Chair, GlenWilk, at ASM America, 3440 E Univer-sity Dr., Phoenix, AZ 85034, USA.Phone: 602-470-5825, Fax: 602-437-1403, E-mail: [email protected], for updates on the 2004 IEEESISC, including travel, technical pro-gram, and registration information,visit our web site at http://www.IEEESISC.com

Glen WilkSISC Arrangements Chair

ASM AmericaPhoenix, AZ, USA


2004 IEEE Semiconductor Interface

Specialists Conference (SISC)

2004 IEEE Semiconductor Interface

Specialists Conference (SISC)

eds1004.qxd 8/13/04 9:55 AM


Once thought of as a futuristicsource of electricity, solar elec-tric (photovoltaic) energy ismore and more becoming amainstream choice for residen-tial and commercial consumersof electricity. Strong incentiveprograms in Japan, Germany,and California are spreadingthroughout Europe, whilemore states in the U.S. are opt-ing to promote solar electricenergy as a viable choice overconventional energy sourcesand even other renewables.With the increase in incentiveprograms around the world,photovoltaic shipments couldincrease substantially, primari-ly into on-grid applications, and hope-fully prove to the conventional energycommunity that solar electric energyhas now entered the mainstream, andis here to stay.

To continue to promote photo-voltaic energy the 31st IEEE Photo-voltaic Specialists Conference andExhibition will take place from Mon-day to Friday, January 3-7, 2005, atDisney’s Coronado Springs Resort, inLake Buena Vista, Orlando, Florida.The conference Technical Programwill feature not only plenary sessionsin each of the major areas, such asthose organized in the past, but willbe broadened scientifically and yetaccommodate the needs of the rapid-ly growing PV industry better. Boththe terrestrial and space communitieswill be well represented. The follow-ing six major areas will be covered atthe conference.

Area 1 is concerned with Fundamen-tals, Novel Materials and Devices.Advances in the synthesis of nanostruc-tured materials and further research onthe physics of photo-carrier generationand collection in materials may enablenew and fundamental advances in pho-tovoltaics to be made. Area 2 will focuson polycrystalline thin-film semicon-ductors, mainly based on cadmium tel-luride and copper indium diselenide.These are scoring impressive advancesin small cell efficiencies while the rangeof promising alloy materials broadens.Improvements are also being made in

the efficiency, reproducibility and relia-bility of large-area modules while theproduction volume of several manufac-turers is increasing

Area 3 concerns solar cells based onIII-V semiconductors and concentratorphotovoltaics. These are among thehighest-efficiency routes to solar energyconversion, in terms of both theoreticalpotential and demonstrated perfor-mance. Solar concentrators stronglyfavor the use of highly efficient cells,whether they are made from silicon, III-Vs, or other semiconductors, and canaccommodate technologies that haverelatively high cost per unit cell area,because of the small area of cellsrequired in such systems. Crystalline sil-icon (c-Si) continues to be the dominantmaterial system for solar cell manufac-turing and is fully represented in Area 4.Many advances have occurred in theareas of material growth, solar cell pro-cessing, process-monitoring/characteri-zation methods, and modulemanufacturing, which have facilitatedincreases in production and lowering ofthe photovoltaic energy costs.

Area 5 encompasses photovoltaicstechnology based on multijunctions ofamorphous and nano/microcrystallinesilicon and its alloys with germanium.These have matured over the last twodecades through steady advances inthe design and fabrication of improvedmaterials and solar cell structures aswell as the manufacture of very largearea, integrated panels. The global

market for photovoltaic panelsis increasing at an annual rateof 25 to 30%. The largestgrowth has been in the urbanarea where PV systems con-nected to the grid are becom-ing increasingly popular. Amajor share of the market hasbeen taken up by building-integrated photovoltaic – PVintegrated to the roof and thisfaçade is now a commonsight. PV is used extensively inremote areas as well. Area 6focuses on terrestrial systemsand brings together the topicsof manufacturing, reliabilityand field experience.

This conference not onlyfulfills the need to understand the keytechnical issues, but also addressesthe recent activities, problems andconcerns of the PV community. To thisend an expanded exhibition is beingorganized with the participation ofcompanies active in PV. The mostrecent developments in products andservices will be highlighted with spe-cial emphasis on applications, systemintegrators, distributors, and manufac-turers. Because we recognize theimpressive growth in the marketsworldwide, the conference organizersare making significant efforts toensure that the program offeringsaddress the needs, not just of the R&Dcommunity, but also of the criticallyimportant commercial markets and theinfrastructures that support them (e.g.,finance and development community,government officials and policy mak-ers, utilities, etc.). Having these com-munities, as active participants of theConference will enhance the overallexchange of information, provide abetter context for the technologies,and make available an expanded audi-ence for the markets that theexhibitors need to reach.

The Auxiliary Program for the31st IEEE Photovoltaic SpecialistsConference and Exhibition consistsof special events for attendees andstudents, as well as specialized pro-grams for target audiences. A spe-cial topical workshop will be heldbefore the conference, and there will

2005 IEEE Photovoltaic Specialists

Conference and Exhibition (PVSC)

2005 IEEE Photovoltaic Specialists

Conference and Exhibition (PVSC)

eds1004.qxd 8/13/04 9:55 AM

Short Courses

This year the Short Courses, on Sun-day Dec. 12, will be: “45 nm CMOSTechnology,” organized by ClementWann of IBM, and “Circuit and Sys-tem Technologies for Digital Con-sumer Electronics,” organized byAkira Matsuzawa of Tokyo Institute ofTechnology.

These courses give attendees theopportunity to learn about emergingnew areas and important develop-ments, and to benefit from directcontact with lecturers who areexperts in the field. They also includeintroductory material for generalaudiences. Advance registration isrequired.Technical Program

This year’s technical areas of cov-erage are: • CMOS Devices• CMOS and Interconnect Reliability• Displays, Sensors and MEMS• Integrated Circuits and Manufacturing• Modeling and Simulation• Process Technology• Quantum Electronics and Com-

pound Semiconductors• Solid State Devices

The CMOS Devices sessions willcover breakthroughs and advance-ments in device physics; novel MOSdevice structures (such as vertical,multiple-gate, and 3-D integratedFET); CMOS scaling issues; high-per-formance, low power and analog/RFdevices; SOI, strained silicon and SiGedevices; noise behavior of MOS struc-tures and device measurement andcharacterization.

CMOS and Interconnect Relia-

bility will cover all areas of reliabilityfor both device and interconnect man-ufacturing processes. Specific topicswill include hot carriers; gate dielectricwear-out and breakdown; processcharging damage; latch-up, ESD andsoft errors; bias temperature instabili-ties; reliability of high-k and low-kmaterials, circuits and packaging;interconnect reliability, electromigra-tion, and the impact of back-end pro-cessing on devices; manufacturingtechnologies for reliability; and relia-bility issues for memory technologies,SOI and BICMOS.

Displays, Sensors and MEMSsessions will cover critical devices,structures and integration for imag-ing, and displays, detectors, sensors,and MEMS. A subset of key topicswould include CMOS imagers; CCDs;TFTs; organic, amorphous and poly-crystalline devices; vacuum micro-electronics; emissive displays; andsensors for chemical, molecular andbiological applications. MEMS topicsinclude resonators, switches and pas-sives for RF applications; integratedsensors; micro-optical and micro-flu-idic devices, and micro-power genera-tors. Particular emphasis will beplaced on integrated implementa-tions. Other relevant subjects includedesign, fabrication, reliability, theoryand modeling.

Integrated Circuits and Manu-facturing sessions will focus onadvances in integrated circuits tech-nology; novel memory cell concepts;full process integration for memory,logic and mixed-mode applications,and manufacturing. Areas of interestinclude process architecture for per-

formance and manufacturing, high-speed logic, advanced memories andmultifunction integrated circuits; andintegrated passives, low power, low-noise, analog, RF and mixed signalICs. Topics also include IC manufac-turing technology and methodology,process control, failure analysis, yieldenhancements and modeling.

Modeling and Simulation ses-sions will discuss all areas of analyti-cal, numerical, and statisticalapproaches to the modeling of elec-tronic and optical devices, their isola-tion and interconnection; physical andcircuit models for devices and inter-connects; and the modeling of fabrica-tion processes and equipment,including simulation algorithms,process characterization, and parame-ter extraction. Submissions shouldadvance the modeling and simulationart or apply existing techniques togain new insights into devices.

Process Technology sessionswill cover front-end and back-endprocess modules for fabrication ofCMOS, memory, and BICMOSdevices. Front-end topics will includesubstrate technologies; lithography;etching; isolation; thin dielectrics;high-k materials and metal elec-trodes for transistors and MIMcapacitors; shallow junctions; RTP;silicides; and new materials. Back-end topics will include conductorsystems; low-k materials; contactand via processes; planarization, andmultilevel interconnect design con-siderations.

Quantum Electronics andCompound Semiconductors willcover compound semiconductors


be a high school demonstration ofphotovoltaic applications. SolarDecathlon is a special workshop forparticipating university teams thatwill be held on Monday, January 3,2005. The Solar Decathlon is a com-petition for university schools ofarchitecture and engineering todesign, build and operate the mosteffective and efficient solar poweredhouse. The contest will be held inlate September 2005 on the NationalMall in Washington, DC. The work-

shop, with all 19 participating teams,will be used to assess progress andfully plan for the historic event onthe Mall.

An Exhibition of High School Photo-voltaic Demonstrations will be held inconjunction with the exposition. Highschool students from the Orlando areawill design and build experiments andapplications in photovoltaic technolo-gy. Students will display their workand discuss their projects with atten-dees. Awards will also be given to the

best high school projects.Please visit our web site at

www.ieeepvsc.org and join us at Dis-ney’s Coronado Springs Resort, WaltDisney World®, Florida for the nextconference in this foundation series ofphotovoltaic conferences that haveserved the field since 1961.

Christopher R. WronskiPVSC General Chair

Penn State UniversityUniversity Park, PA, USA

2004 IEEE International Electron Devices Meeting


(continued from page 1)

eds1004.qxd 8/13/04 9:55 AM

(e.g. GaAs, InP, GaN, SiC and relatedalloys) with electronic and optoelec-tronic device applications, such asFETs, HBTs, high-power transistors,LEDs, lasers and external modula-tors. Also, devices with ballistic,quantum, and single-electron effects;spintronics, optoelectronic ICs andoptical interconnects; and photonicbandgap structures and crystals.

Solid State Devices sessions willfocus on discrete and integrated highpower/current/voltage devices; Si andSiGe bipolar transistors; novel devicesand technology; high-speed Si devices;and integrated RF components includ-ing inductors, capacitors and switcheson Si or SiGe platforms. Research onother novel device and memory struc-tures also will be presented, includingnanotubes, nanowires, quantum dots,bioelectronics, and molecular deviceson silicon, along with new methods ofassessing silicon device and materialsperformance.

Plenary PresentationsThis year’s plenary talks are, “FutureSemiconductor Manufacturing — Chal-

lenges and Opportunities,” by HiroshiAwai, current EDS Society Presidentand Director of the Iwai Laboratory,Frontier Collaborative Research Center,Tokyo Institute of Technology; and“Emerging Technologies on Silicon,”by Michel Brillouet, Deputy Director ofCEA/LETI of France; and the retrospec-tive talk by Louis Parrillo.

Evening Panel SessionsIEDM 2004 will feature two eveningpanel sessions. One, organized andmoderated by Prof. Mark Lundstromof Purdue University, will deal withthe question, “Nanotechnology =Nanoprofits?” Another, organizedand moderated by Dr. Hans Stork,Chief Technology Officer at TexasInstruments, is on the topic, “Whatwill end CMOS Scaling — Money orPhysics?”

For Registration and otherinformation, visit the IEDM 2004home page at www.ieee.org/confer-ence/iedm or contact ConferenceManager, Phyllis Mahoney, 16220 S.Frederick Ave., Gaithersburg, MD20877, USA; tel. (301) 527-0900, ext.

103; fax (301) 527-0994; or email:[email protected]. The sub-mission date for regular papers hasalready passed, but a limited numberof Late-News Papers will beaccepted for presentation until Sep-tember 13, 2004.

The San Francisco area providesmany attractions for visitors and weencourage attendees to explorethem in the off hours of the confer-ence. The IEDM committee memberslook forward to seeing you inDecember.

Clifford King, Noble Device Tech-nologies, Publicity Chair

E-mail: [email protected]

Tom Bonifield, Texas Instruments,Publicity Vice Chair

E-mail: [email protected]

Jeffrey J. WelserIEDM General Chair

IBM T.J. Watson Research CenterYorktown Heights, NY, USA


EDS Announces “Revised” Membership

Fee Subsidy Program (MFSP)

EDS Announces “Revised” Membership

Fee Subsidy Program (MFSP)

Effective for the 2005 member cycle(9 /1 /04) , EDS has revamped i tsMembership Fee Subsidy Programand will be launching a new PartialMembership Fee Subsidy Program(PMFSP).

IEEE policy currently allows a50% discount on IEEE dues and onesociety membership for any individ-ual whose annual salary is less thanUS$11,300. This offering is referredto as the Minimum Income SpecialConsiderations Option. The ElectronDevices Society currently has a pro-gram for i ts chapters cal led theMembership Fee Subsidy Program(MFSP), which both complementsthe IEEE Minimum Income offeringand provides a significant additionalbenefit for qualified individuals.With the EDS Partial MembershipFee Subsidy Program, EDS will pay$30 ($15 for students) towards theIEEE and EDS dues for any newmember or student applicant quali-

fying for the Minimum Incomeoption. The individuals can beapplying for either regular member-ship or student membership. Thisprogram is also avai lable to al lunemployed members. Although theIEEE Minimum Income option allowsindividuals to purchase publicationsubscriptions for one-society at a50% reduced rate, the EDS PMFSPdoes not cover the payment of publi-cation subscriptions. In addition,PMFSP is not available to currentIEEE members or students renewingtheir IEEE and EDS memberships.

If a chapter has individuals whoqualify for the reduced IEEE Mini-mum Income offering and the EDSPMFSP, all the Chapter Chair needsto do is coordinate the obtainingand submission of the IEEE/EDSmembership application forms forthe individuals he/she is proposingto be covered by EDS. The ChapterChair should also contact the EDS

Executive Office to advise of theirparticipation in the program. Allapplication forms should be mailedto the EDS Executive Office alongwith the appropriate funds. Oncereceived, the application forms willbe coded by the Executive Officewith a special account number andsubmitted to the pert inent IEEEdepartment for processing.

Aside from being a program forexisting EDS chapters, the EDS Par-tial Membership Fee Subsidy Pro-gram is also an extremely goodmeans to help facilitate the launch-ing of new chapters in low incomegeographical areas. For any ques-t ions concerning the program,please contact Laura Riello ([email protected]) of the EDS ExecutiveOffice.

James B. KuoEDS Vice-President of Membership

Simon Fraser UniversityBurnaby, British Columbia, Canada

eds1004.qxd 8/13/04 9:55 AM


Society NewsSociety News

The Awards Committee of the Elec-tron Devices Society is responsiblefor oversight of all its awards aswell as the stimulation of nomina-tions for both EDS awards and thenumerous IEEE awards. The AwardsCommittee consists of the followingmembers: D. Buss; Y. Hirayama;R.P. Jindal; L.C. Parrillo; J. Prasad;S.C. Sun and J.J. Welser. Ourawards include:

J. J. Ebers - This is the premieraward of the EDS and recognizesoutstanding technical contribu-tions to electron devices. Theaward consists of a certificate anda check for $5,000 and is present-ed annually to the recipient in theopening ceremonies at the IEDM.The submission deadline for thisaward is July 1st.Distinguished Service - Thisaward was established in 1993 torecognize and honor outstandingservice to the Electron DevicesSociety and its sponsored activi-ties. It is presented annually andthe recipient is awarded a certifi-cate and a check for $2,500, and ispresented to the recipient in theopening ceremonies at the IEDM.The submission deadline for thisaward is July 1st.Paul Rappaport Award - Thisaward was established in 1984 tohonor the author(s) of the bestpaper that has appeared in an EDSpublication in the preceding calen-dar year. With the start of theGeorge Smith Award in 2002, thisaward is targeted specifically toTransactions on Electron Devices.It is presented annually and therecipient(s) is awarded a certificateand a check for $2,500, presentedat the IEDM. George E. Smith - This Awardwas established in 2002 to recog-

nize the best paper appearing ina fast turn around archival publi-cat ion of the IEEE ElectronDevices Society, targeted to IEEEElectron Device Letters. It is pre-sented annually and the recipi-ent(s) is awarded a certificate anda check for $2,500, presented atthe IEDM.EDS Graduate Student Fel-lowships - EDS established theGraduate Fellowship Program topromote, recognize, and supportgraduate level study andresearch within the fields of inter-est of the Electron Devices Soci-eties. At least one fellowship isawarded annually to students ineach of the Americas, Europe/Mid-East/Africa, Asia-Pacific. geo-graphical regions every year. Itconsists of a prize of US$5,000 tothe student, US$1,000 grant tothe student’s department,US$1,000 grant to the student’sfaculty advisor in support of thestudent’s project and a travelsubsidy of up to US$3,000 toeach recipient to attend the IEDMfor presentat ion of an awardplaque. The submission deadlinefor this award is May 15th.EDS Chapter of the Year - Theaward is given annually basedon the quantity and quality of theactivities and programs imple-mented by the chapters duringthe prior July 1st - June 30thperiod. It is presented annuallyand the recipient(s) is awarded acertificate and a check for $1,000,presented at the IEDM. The sub-mission deadline for this awardis September 15th.EDS Region 9 OutstandingStudent Paper Award - It pro-motes, recognizes, and supportsmeritorious research achievement

on the part of Region 9 (LatinAmerica and the Caribbean) stu-dents, and their advisors, throughthe public recognition of theirpublished work, within the Elec-tron Devices Society’s field ofinterests. The prize is presented atone of the EDS supported confer-ences periodically held withinRegion 9. In addit ion to therecognition certificate, the recipi-ent will receive a subsidy of up to$1,000 to attend the conferencewhere the award is to be present-ed. The submission deadline forthis biennial award is April 15th.The IEEE has numerous awards

consisting of Medals and TechnicalFields Awards. Fortunately, EDSmembers make contributions thatare included in the technical, educa-tional and leadership categoriescovered by these awards and therecipient list typically includes EDSmembers every year. I encourageyou to become familiar with theseawards, which are listed on “IEEEAwards and Recognition” web siteand nominate colleagues for theawards. It is my experience thatEDS and IEEE award recipients andtheir institutions are proud of therecognition that is an integral partof the award structure. Do yourpart- nominate deserving col-leagues for an award.

Alfred U. Mac Rae,EDS Vice-President

of AwardsMac Rae Technologies

Berkeley Heights,NJ, USA

EDS Standing Committee Report

– Awards Committee

EDS Standing Committee Report

– Awards Committee

eds1004.qxd 8/13/04 9:55 AM


EDS Compact ModelingTechnical Committee Report- by Narian Arora, EDS Compact Modeling Chair

The IEEE ElectronDevices Society(EDS) Santa ClaraValley Chapter(SCV) in collabora-tion with the IEEECompact ModelingCommittee (CMC)organized a half-day symposium on

Compact modeling on May 7, 2004. Themeeting was held at National Semicon-ductor’s Building 31 Auditorium, 955Kifer Road, Sunnyvale, CA. The EventManager was IEEE-EDS CMC member,Dr. Samar Saha ([email protected]). Thesymposium proceeding was publishedin CD-ROM. The registration fee perperson was $40 and $50 for IEEE mem-bers and non-members, respectively,while full time students and unem-ployed were free. The total number ofattendees was more than 125. Therewere six speakers (Professor Bob Dut-ton, Dr. Jane Xi, Dr. Peter Bendix, Dr.Narain Arora, Sunil Yu, and Dr. PhilipJensen) and seven presentations in themeeting. Dr. Narain Arora presentedthe paper for Dr. Miura-Mattausch whocould not be at the meeting. The title ofthe papers and their authors are:

1. Next Generation CompactModeling, R.W. Dutton and C-H.Choi, Stanford University.

2. The Development of theNext Generation BSIM for Sub-100nm Mixed-Signal Circuit Sim-ulation, J. Xi, University ofCalifornia, Berkeley.

3. A Practical Examination ofMOS Transistor Model Accuracy inModern CMOS Technology, P. Ben-dix, *D. Foty, and D. Pachura, LSI LogicCorporation, *Gilgamesh Associates.

4. Self-consistent Surface-Potential-based Model HiSIM:Advantages and Applications, M.Miura-Mattausch, H.J. Mattausch, *T.Ohguro, *T. Iizuka, *M. Taguchi, and*S. Miyamoto, Hiroshima University,Japan, *Semiconductor TechnologyAcademic Research Center, Japan.

5. Interconnect Modeling forFrequency-Dependent CrosstalkNoise Analysis, S. Yu, S. -P. Sim, S.Krishnan, *D.M. Petranovic, and C. Y.Yang, Santa Clara University, *Men-tor Graphics Corporation.

6. Compact Modeling for Snap-back-based ESD Protection, P.Jansen, V. Vassilev, N. Mahadeva, andG. Groeseneken, IMEC, Belgium.

7. Modeling and Characteriza-tion of On-chip Inductance forSub-100nm Cu CMOS Process, N.Arora, L. Song, Cadence Design Sys-tems, and *V. Chang, Cadence DesignSystems, *TSMC.

Limited number of conference CD-ROMs are available from the SCVchapter EDS committee (contact:[email protected]).

EDS Vacuum Devices TechnicalCommittee Report-by James A. Dayton, EDS Vacuum Devices Chair

Dan M. Goebel hasbeen elected Chair-man of the EDSTechnical Commit-tee on VacuumDevices, succeedingJames A. Dayton,Jr., who organizedthe committee in1998. Goebel recent-

ly joined the NASA Jet Propulsion Labo-ratory, Pasadena, CA, after adistinguished career with Hughes, firstat the Research Laboratory in Malibu,CA and later with the Electron Dynam-ics Division (now Boeing EDD) in Tor-rance, CA. Goebel has served as theVacuum Devices Editor for Transac-tions on Electron Devices (T-ED) forthe last five years.

The EDS President appoints chair-men and members of the technicalcommittees. Typically, the outgoingchairman proposes a successor to theEDS President for appointment. Theelection of Goebel represents the firstoccasion that this recommendation isbased on an election by the commit-tee members. All 19 committee mem-bers participated in the nomination

and election process. The most visible product of the

Technical Committee has been theInternational Vacuum Electronics Con-ference (IVEC), which was initiated in2000 and has become the premier con-ference for the presentation of work inthe field. The fifth IVEC was held inMonterey, CA in April with Goebel asGeneral Chair and Carol L. Kory asTechnical Program Chair. A new fea-ture at IVEC 2004 was the IVEC Stu-dent Paper Award, which was won byC. W. Baik of Seoul National Universi-ty. Georges Fleury of Thales ED,Velizy, France, won the IVEC Award forExcellence in Vacuum Electronics,which was initiated in 2002. Previouswinners of the Award for Excellencehave been George Caryotakis of Stan-ford Linear Accelerator Center, PaloAlto, CA, in 2003 and ArmandStaprans of Communication and Pow-er Industries, Palo Alto, CA, in 2002.

Under the leadership of Gun-SikPark, the fourth IVEC was held in Seoul,Korea in May 2003 under what can beconservatively described as dramaticconditions brought about by the threatof the SARS epidemic. Fortunately, thevirus did not migrate to Korea and IVEC2003 was a resounding success.

Venues have been selected for IVECthrough 2007. They are IVEC 2005,April 20-22, Noordwijk, The Nether-lands, General Chair, Pierre Waller;IVEC 2006, April 25-27, Monterey CA,General Chair, Bob Fickett and Techni-cal Program Chair, Baruch Levush; andIVEC 2007, April 24-26, Kitakyushi,Japan, General Chair, Takao Kageya-ma. IVEC 2006 will be a joint meetingwith the International Vacuum Elec-tronic Sources Conference.

The current members of the Techni-cal Committee are Dan M. Goebel(Chairman), NASA Jet Propulsion Lab-oratory, Pasadena, CA, John H.Booske, U. of Wisconsin, Madison, WI,Richard G. Carter, Lancaster Universi-ty, Lancaster UK, George Caryotakis,Stanford Linear Accelerator Center,Palo Alto, CA, Han-Ying Chen, Air AsiaTechnology, Hsinchu, Taiwan, Jon A.Christensen, Boeing EDD, Torrance,CA, James A. Dayton, Jr., GenvacAerospace, Cleveland, OH, Takao

EDS Technical Committee Reports –

Compact Modeling and Vacuum Devices

EDS Technical Committee Reports –

Compact Modeling and Vacuum Devices

Narian Arora

James A. Dayton, Jr.

eds1004.qxd 8/13/04 9:55 AM


Kageyama, Kitakyushi Foundation,Kitakyushi, Japan, Guenter Kornfeld,Thales ED, Ulm, Germany, Carol L.Kory, Calabazas Creek Research andAnalex/NASA Glenn Research Center,Cleveland, OH, Baruch Levush, NavalResearch Laboratory, Washington, DC,Shenggang Liu, U. of Electronic Sci-ence and Technology, Chengdu, ROC,Gun-Sik Park, Seoul National U., Seoul,Korea, Michael I. Petelin, Russian

Academy of Science, Nizhny Nov-gorod, Russia, Charles A. Spindt, SRIInternational, Menlo Park, CA, ArmandStaprans, Communication and PowerIndustries, Palo Alto, CA, PhilippeThouvenin, Thales ED, Velizy, France,Richard B. True, L-3 CommunicationsED, San Carlos, CA, Pierre Waller,European Space Agency, Noordwijk,The Netherlands.

The Technical Committee meets

annually during IVEC. In the interim,communication is maintained by emailand occasional audio teleconferences.The membership of the committeeprovides not only geographic diversi-ty, but also represents the varied tech-nical specialties that comprise vacuumelectronics. It should also be pointedout that two of the members, Kory andWaller, were under the age of 30 whenthey joined the committee.

2003 GEORGE E SMITH AWARD2003 GEORGE E SMITH AWARDOne priority of the Electron DevicesSociety is to recognize and enhancethe quality of papers published in EDSarchival literature. The George E.Smith Award was established in 2002to recognize the best paper appearingin a fast turnaround archival publica-tion of EDS, targeted to IEEE ElectronDevice Letters. Among other criteriaincluding technical excellence, animportant criterion for selection for theaward is comprehensive and impartialreferencing of prior art. The paper win-ning the 2003 George E. Smith Awardwas selected from 225 manuscriptsthat were published in 2003. The arti-cle is entitled “(110) Strained-SOI n-MOSFETs With Higher ElectronMobility”. This paper appeared in theApril 2003 issue of IEEE ElectronDevice Letters and was authored byTomohisa. Mizuno, Naoharu Sugiya-ma, Tsutomu Tezuka and Shin-ichiTakagi. The award will be presented inthe plenary session of the Internation-al Electron Devices Meeting to be heldon December 13th, 2004 in San Fran-cisco, California. In addition to theaward certificate, the authors willreceive a check for $2,500. On behalfof the Electron Devices Society I wouldlike to congratulate the authors for thisachievement. Brief biographies of theauthors are given below.

Tomohisa Mizunowas born in Japan,1955. He receivedthe B.S. degree inphysics, the M.S.degree in astro-physics, and thePh.D. degree inapplied physicsfrom Nagoya Uni-

versity, Nagoya, Japan, in 1979, 1981,and 1991, respectively. In 1982, hejoined Toshiba Corp., where he wasengaged in the research of DRAMs,SiN-LDD spacer, and dual-gate verticalMOSFETs. Since 1990, he has beenengaged in the research of scaled-CMOS, performance fluctuations, andcarrier’s velocity overshoot. In 2004, hemoved to Kanagawa University, wherehe is a professor in faculty of science.He has been working on the strained-SOI CMOS in MIRAI Project since 2001.

Naoharu Sugiya-ma was born inShizuoka, Japan, in1959. He receivedthe B.S., M.S., andPh.D degrees innuclear engineeringfrom Nagoya Uni-versity, Nagoya,Japan, in 1982,

1984, and 1993, respectively. In 1984,he joined the Toshiba Research andDevelopment Center, Kawasaki, Japan.From 1987 to 1990, he was on leave atthe Optoelectronics TechnologyResearch Laboratory, Tsukuba, Japan.His research field is the epitaxialgrowth of semiconductor thin films. Dr.Sugiyama is a member of the JapanSociety of Applied Physics and the Vac-uum Society of Japan.

Tsutomu Tezukawas born inUtsunomiya, Japan,in 1964. He receivedB.S. and M.S.degrees in physicsfrom Tohoku Uni-versity, Sendai,Japan in 1987 and

1989, respectively. He joined the Toshi-ba Research and Development Center,Kawasaki, Japan, where he has beenworking on the research and develop-ment of semiconductor lasers andstrained-SiGe/Si field effect transistors.He is currently developing strained Si-on-Insulator MOSFETs. Mr. Tezuka wonthe Japan Society of Applied PhysicsAward for the Most Promising YoungScientist in 1994. He is a member of thePhysical Society of Japan and the JapanSociety of Applied Physics.

Shin-ichi Takagiwas born in Tokyo,Japan, on August25, 1959. Hereceived the B.S.,M.S. and Ph.D.degrees in electronicengineering fromthe University ofTokyo in 1982, 1984

and 1987, respectively. He joined theToshiba R&D Center in 1987, where hehas been engaged in the research on thedevice physics of Si MOSFETs. From1993 to 1995, he was a Visiting Scholarat Stanford University. Since 2001, hehas joined to MIRAI Project, as theleader of New Transistor StructuresGroup. In 2003, he moved to the Univer-sity of Tokyo as a professor in the Grad-uate School of Frontier Science.

Renuka P. JindalEDS Vice-President of Publications

University of Louisiana at LafayetteLafayette, LA, USA

eds1004.qxd 8/13/04 9:55 AM

One priority of the Electron Devices Soci-ety is to recognize and enhance the qual-ity of papers published in EDS archivalliterature. To this end, the Society con-fers its prestigious Paul RappaportAward to the best paper published in theIEEE Transactions on Electron Devices.Among other criteria including technicalexcellence, an important criterion forselection for the award is comprehensiveand impartial referencing of prior art. Thewinning paper was selected from 333manuscripts that were published in 2003.The article is entitled, “ProgrammableSingle-Electron Transistor Logic forFuture Low-Power Intelligent LSI: Pro-posal and Room-Temperature Opera-tion”. This paper was published in July,2003 issue of the IEEE Transactions onElectron Devices, and was authored byKen Uchida, Junji Koga, Ryuji Ohba andAkira Toriumi. The award will be present-ed in the plenary session of the Interna-tional Electron Devices Meeting to beheld on December 13th, 2004 in SanFrancisco, California. In addition to theaward certificate, the authors will receivea check for $2,500. On behalf of the Elec-tron Devices Society I would like to con-gratulate the authors for thisachievement. Brief biographies of theauthors are given below.

Ken Uchida wasborn in Cambridge,MA in 1971. Hereceived B.S. degreein physics, M.S. andPh. D. degrees inapplied physics allfrom the Universityof Tokyo, Tokyo,

Japan, in 1993, 1995, and 2002, respec-tively. In 1995, he joined the R&D Center,Toshiba Corporation, Kawasaki, Japan.He has studied the carrier transportproperties in nano-scaled structures andhas engaged in the research on physicsand technology of single-electrondevices, Schottky source/drain MOS-FETs, and ultrathin-body SOI MOSFETs.

Junji Koga re-ceived the B.S.degree in physicsfrom the Universityof Tokyo, Japan, in1988. He joined theResearch and Devel-opment Center of

Toshiba Corporation, Kawasaki,Japan, in 1988, where he has beenengaged in the research on the MOS-FET device physics including thin filmSOI transistor, Cryo-CMOS devicetechnology, and silicon functional tun-nel devices. He is with Advanced LSITechnology Laboratory of ToshibaCorporation.

Ryuji Ohba wasborn in Osaka,Japan, on Septem-ber 10, 1966. Hereceived the B.S.and M.S. degreesin physics in 1989,1991, respectively,from the Universi-

ty of Tokyo, Tokyo, Japan. Since1994, he has been working withResearch and Development Center ofToshiba Corporation, where he hasbeen doing research on the semicon-ductor device physics in sub-0.1mmSi devices.

Akira Toriumireceived the B.S.degree in physics,the M.S. and Ph.D.degrees in appliedphysics from theUniversity of Tokyoin Japan, 1978,1980 and 1983,

respectively. He entered R&D Center ofToshiba Corporation in 1983. FromAug. 1988 to Feb. 1990, he was withMassachusetts Institute of Technologyas a visiting researcher, on leave fromToshiba Corporation. In May 2000, hemoved to the University of Tokyo. Hisresearch interests have been silicondevice physics and related materialsscience throughout his professionalcarrier. He is now interested in reliabili-ty physics of ultra-thin gate oxides andmaterials science of high-k dielectrics,and physics and technology of organicelectron devices as well as very smallsize silicon devices.




2003 PAUL RAPPAPORT AWARD2003 PAUL RAPPAPORT AWARD

Akintunde I. Akinwande

Andreas G. Andreou

Yves L. Baeyens

James D. Bernstein

Zeljko Butkovic

Ming-Cheng Cheng

Wing Yiu Cheung

Vitaly P. Chumachenko*

Mark D. Feuer

Shri N. Gupta

Krzysztof Iniewski

Naz E. Islam

Igor V. Ivanchenko*

Wai Tung Ng

Jorgen Olsson

Nina O. Popenko*

Roland Stenzel

Randir Thakur*

Peide Ye*

* = Individual designated EDS as nominating entity

If you have been in professionalpractice for 10 years, you may be eli-gible for Senior Membership, thehighest grade of membership forwhich an individual can apply. Newsenior members receive a wood andbronze plaque and a credit certificatefor up to US $25 for a new IEEE soci-ety membership. In addition, a letterwill be sent to employers, recognizingthis new status.

For more information on seniormember status, visit http://www.ieee.org/membership/grades_cats.html#SENIORMEM To apply for seniormember status, fill out an application athttp://www.ieee.org/organizations/rab/md/smelev.htm.

Congratulations

to the EDS

Members Recently

Elected to IEEE

Senior Member

Grade!

Congratulations

to the EDS

Members Recently

Elected to IEEE

Senior Member

Grade!

eds1004.qxd 8/13/04 9:55 AM


EDS Members Named Winners of

2004 IEEE Medals and Service Awards

EDS Members Named Winners of

2004 IEEE Medals and Service AwardsThree EDS members won 2004 IEEEmedals. Paul R. Gray won the IEEEJames H. Mulligan, Jr. Education Medal,Frederick H. Dill won the IEEE Jun-ichiNishizawa Medal and Jerry R. Yearganwon the IEEE Haraden Pratt Award.

IEEE James H. Mulligan, Jr. Edu-cation Medal

“For exemplarycontributions toelectrical engineer-ing educationthrough mentoringof students, an influ-ential textbook, andUniversity-wide aca-demic leadership.”

The executivevice chancellor

and provost at the University of Cali-fornia at Berkeley, Dr. Paul R. Grayhas equipped a generation of inte-grated circuit designers to excel inindustry and academia. His studentshave won numerous prizes, includingfour Best Paper Awards at the IEEEInternational Solid State Circuits Con-ference and the IEEE Transactions onCircuits and Systems and the IEEEJournal of Solid-State Circuits BestPaper Awards.

Since joining Berkeley’s departmentof electrical engineering and computersciences (EECS) in 1971, Dr. Gray hasheld a number of administrative posts,including department chairman in theearly 1990s, dean of engineering from1996 to 2000 and now executive vicechancellor and provost. He helpedredesign the EECS undergraduate cur-riculum, established a department ofbioengineering and championed inter-disciplinary initiatives in health scienceand nanotechnology.

Dr. Gray is the co-author of the wide-ly used 1977 textbook “Analysis andDesign of Analog Integrated Circuits.”Expanded in successive editions, itremains the standard reference workfor the field. He has co-edited two othertexts, contributed to more than 130papers and holds 13 U.S. patents.

An IEEE Fellow and member of theU.S. National Academy of Engineer-ing, Dr. Gray has served as editor ofthe IEEE Journal of Solid State Cir-cuits and also as president of the IEEE

Solid-State Circuits Council. He is apast member of several EngineeringDean’s Councils, and his numerousawards include the IEEE W.R.G. BakerPrize Paper Award and the IEEE Solid-State Circuits Award. He has held sev-eral industry positions and continuesto consult to electronics companies.

IEEE Jun-ichi Nishizawa Medal“For lifetime

contributions tomicroelectronicsprocessing, includ-ing lithographicsimulation, semi-conductor lasersand magneticrecording.”

Since 1958,when he joined

IBM Research Division, then in Pough-keepsie, New York, Frederick (Rick)Dill, the inaugural recipient of the IEEEJun-ichi Nishizawa Medal, has doneseminal work in a remarkable range offields.

Dr. Dill’s early achievements includeessential contributions to semiconduc-tor lasers, and to building high-speedintegrated circuits using germanium. Inthe 1970s he spearheaded researchthat led to pioneering process modelsand materials characterization for pho-tolithography, transforming device lith-ography from an art to an engineeringscience. His papers are still referencedtoday; the parameters used to describephotoresist exposure are called “TheDill Parameters.” In the 1980s Dr. Dillwas lead inventor of the video RAM,and he currently works on disk driverecording heads to improve disk drivecapacity. Today’s disk drive heads arebuilt with processes he pioneered.

An IEEE Life Fellow, Dr. Dill hasserved on the IEEE Board of Directors asDivision I Director. He also served aspresident of the IEEE Electron DevicesSociety and on the society’s Administra-tive Committee. Dr. Dill helped establishseveral IEEE journals including the IEEEJournal of Technology Computer AidedDesign, the first IEEE all-electronic jour-nal. Inaugurated into the U.S. NationalAcademy of Engineers in 1990, Dr. Dillsubsequently chaired the Academy’sEngineering Electronics Engineering sec-

tion. He also was one of the early presi-dent’s of IBM’s Academy of Technology.

A recipient of an IEEE CentennialMedal and an IEEE Third MillenniumMedal, Dr. Dill has more than 30patents, including fundamental patentson automated tools for thin film mea-surements. IBM promoted him to Dis-tinguished Engineer in 2002. He joinedHitachi Global Storage Technologies inSan Jose, California in 2003, followingIBM’s sale of the disk drive business.He is an executive engineer solvingmanufacturing process problems.

IEEE Haraden Pratt Service Award“For outstand-

ing contributionsto the EngineeringA c c r e d i t a t i o nActivities of theIEEE.”

A skillful andcharismatic diplo-mat, Dr. Jerry Year-gan is widely hailedas a voice of reason

with a knack for creative compromiseably demonstrated over a long career ofIEEE service. He is an outstandingambassador for the IEEE, advancing itsaccreditation interests and influencewith his appearances around the globe.

Dr. Yeargan distinguished himselfas an IEEE representative director onthe Accreditation Board for Engineer-ing and Technology (ABET) Board ofDirectors and as ABET president. Heplayed a seminal role in the vitallyimportant merger of ABET and theComputer Science Accreditation Board(CSAB), enabling unprecedented syn-ergy in the accreditation of computerscience, computer engineering andsoftware engineering programs.

Dr. Yeargan is Distinguished Profes-sor and the Texas Instruments Chair ofMixed-Signal and Linear Microelec-tronics in Electrical Engineering at theUniversity of Arkansas in Fayetteville,where he has taught since 1967.

An IEEE Fellow, Dr. Yeargan hasserved as IEEE vice president for Edu-cational Activities (EA) and as presi-dent of the IEEE Education Society, aswell as on the IEEE Board of Directors,

Frederick H. Dill

Paul R. Gray

Jerry R. Yeargan

continued on page 16

eds1004.qxd 8/13/04 9:55 AM

The IEEE Transactions on Semiconduc-tor Manufacturing (T-SM) Best PaperAward is presented to the authors ofthat paper considered by the Transac-tions’ Editorial Staff and reviewers to bethe outstanding paper published duringthe year. The Award is based on theaccuracy, originality, and importance ofthe technical concepts, as well as thequality and readability of the manu-script. The Best Paper is also based onthe immediate or potential impact thatthis work will have on the overall semi-conductor manufacturing industry.

The Editorial Staff is pleased toannounce that the paper entitled “Elec-trical Characterization of the CopperCMP Process and Derivation of MetalLayout Rules,” by S. Lakshmi-narayanan, Peter J. Wright, and Jayan-thi Pallinti has been recognized as thebest paper published in the 2003 Trans-actions. This paper, which appeared inthe November issue, has been chosenbecause it develops and demonstratesa methodology to understand the effectof process variations on electrical inter-connect parameters, and to definedesign rules which limit or minimizethe impact of these variations. By usinga pair of carefully designed test masks,the effects of dishing and erosion inchemical mechanical polishing (orCMP) are studied, and the impact onelectrical line resistances in a variety ofsingle level metal and multilevel metaldual damascene copper interconnectstructures are characterized. Based onanalysis of these structures, guidelinesabout pattern density, feature size, andfeature proximity are generated. Thepaper convincingly demonstrates theimprovements possible through engi-neering-based methodologies fordesign rule generation, and shows the

importance of this link between designand manufacturing.

S. Lakshmi-n a r a y a n a nreceived theB.Tech. degree inelectronics andc o m m u n i c a t i o nengineering fromthe Indian Instituteof Technology,

Madras, India, in1990 and the M.S. and Ph.D. degrees inelectrical engineering from RensselaerPolytechnic Institute, Troy, NY, in 1992and 1997, respectively. He is currently aProcess Development Engineer at LSILogic, Milpitas, CA. From 1997 to 2000,he was a member of the process inte-gration team working on the develop-ment of LSI’s 0.18-<formula><tex>$\mu$</tex></formula>m backend tech-nology. Since 2001, his research inter-ests have included advancedinterconnect development for the 65-nm technology node.

Peter J. Wrightreceived the B.S.and M.E. degrees inelectrical engineer-ing from Rensse-laer PolytechnicInstitute, Troy, NY,in 1983 and 1984,respectively, andthe Ph.D. degree in

electrical engineering in 1989 fromStanford University, Stanford, CA. Heheld summer positions at GTE Labora-tories in 1982 and 1984, and the GER& D Center in 1983, working inthe area of VLSI device and materialsresearch. From 1989 to 1994, he

worked on silicon process integrationand module development at TexasInstruments, Dallas, TX. From 1994 to1998, he worked on integration issuesfor EEPROM products, Altera Corpora-tion, San Jose, CA. From 1998 to thepresent, he has worked on metal inte-gration at LSI Logic, Milpitas, CA. Hehas authored or coauthored over 35technical papers.

Jayanthi Pallintireceived the B.S.degree in chemicalengineering fromAnna University,Madras, India, theM.S. degree inchemical engineer-ing from Indian Insti-tute of Technology,

Madras, India, and the Ph.D. degree inchemical engineering from PennsylvaniaState University, State College, in 1989,1991, and 1996, respectively. She was aPostdoctoral Fellow at the Center forIntegrated Electronics, Rennselaer Poly-technic Institute, NY, from 1996 to 1997.She joined the CMP process modulegroup at LSI Logic Corporation, SantaClara, CA, in 1997, and has been a keycontributor to the BEOL process researchand development. She is currentlyemployed as a Staff Engineer in the Cop-per Wiring Module of Advanced ProcessR& D Group at LSI Logic, Gresham,OR. She has numerous publications/pre-sentations in various conferences andjournals and have nine issued patents.

Duane Boning T-SM Editor-in-Chief

MITCambridge, MA, USA

2003 IEEE Transactions on Semiconductor

Manufacturing (T-SM) Best Paper Award

2003 IEEE Transactions on Semiconductor

Manufacturing (T-SM) Best Paper Award


the IEEE Executive Committee andnumerous committees including theIEEE EA Accreditation Policy Commit-tee. He is a Fellow of the AmericanSociety for Engineering Education(ASEE) and former chair of the ASEEElectrical Engineering Division.

Dr. Yeargan’s honors include the

IEEE Educational Activities BoardMeritorious Service Award, the IEEEEducation Society AchievementAward, the Arkansas Academy ofElectrical Engineers and HalliburtonOutstanding Faculty Awards and theCollege of Engineering OutstandingService to Students Award. He holds

one patent and has produced approx-imately 100 papers.

Alfred U. Mac Rae,EDS Vice-President of Awards

Mac Rae TechnologiesBerkeley Heights, NJ, USA

EDS Members Named Winners of 2004 IEEE Medals

and Service Awards (continued from page 15)

eds1004.qxd 8/13/04 9:55 AM


EDS Distinguished Lecturers Participate in

the 4th WIMNACT-Singapore

EDS Distinguished Lecturers Participate in

the 4th WIMNACT-Singapore

The 4th Workshop and IEEE EDS Mini-colloquium on NAnometer CMOS Tech-nology (WIMNACT-Singapore) wassuccessfully held on July 12, 2004 in Sin-gapore. This mini-colloquium was orga-nized and sponsored by the IEEECPMT/ED/R Singapore Chapter, and co-sponsored by the EDS DistinguishedLecturer (DL) Program and Subcommit-tee for Regions/Chapters (SRC) as well asthe School of Electrical & Electronic Engi-neering (EEE) at Nanyang TechnologicalUniversity (NTU). The Guest-of-Honorwas Prof. Meng Hwa Er, Deputy Presi-dent and Dean, School of EEE, NTU, whodelivered a welcome address to the invit-ed guests and the audience. ChapterChair, Prof. Kin Leong Pey, delivered theopening address and introduced Chapteractivities to the audience. This was fol-lowed by brief introductions of the Sili-

con Technology, Nanoelectronics &Devices, and Computational Nano-Elec-tronics Groups in the MicroelectronicsDivision, NTU, who were the co-hosts ofthis event, by the Program Directors,Prof. Kin Leong Pey, Prof. Beng KangTay, and Prof. Xing Zhou, respectively.

There were five invited DL speakers,including four from overseas and onefrom the local Chapter. The first talk wasgiven by Prof. Cary Yang from SantaClara University entitled “Carbon Nan-otubes as On-chip Interconnects,” fol-lowed by the talk on “Trends onLow-Voltage SOI CMOS VLSI Devicesand Circuits” given by Prof. James Kuoof National Taiwan University. Afterlunch at the NTU staff club with the invit-ed guests and Chapter committee mem-bers, Prof. Juin Liou from University ofCentral Florida gave the talk on “On-Chip

Spiral Inductors for RF Applications: AnOverview,” followed by the talk on “AnOverview of CMOS Technology for RF ICApplications” given by Dr. Yuhua Chengfrom Skyworks Solutions. The Workshopended with the talk by Prof. Xing Zhouon “Technology-Based Predictive Com-pact Model Development for Next Gen-eration CMOS.” The Chapter at the endof the Workshop presented all the speak-ers with a token of appreciation.

In summary, the 4th WIMNACT-Sin-gapore has been another successfulevent after the 3rd WIMNACT-Singa-pore, which was organized by the Chap-ter in October 2003. The Workshopreceived enthusiastic response withmore than 100 attendees from the localindustries and academic institutions.They showed deep interests in the invit-ed talks, which covered a wide range ofimportant topics of current and futuretechnologies. The complete informationon the 4th WIMNACT-Singapore,including all the slides and snapshots,has been made available at the follow-ing website: http://www.ntu.edu.sg/eee/eee6/conf/WIMNACT04.htm

Xing ZhouNanyang Technical University

Singapore

Kin Leong PeyCPMT/ED/R Chapter Chair

Nanyang Technical UniversitySingapore

From right to left: James Kuo (Speaker, National Taiwan University), Kin Leong Pey (Chapter Chair, NTU),Juin Liou (Speaker, University of Central Florida), Meng Hwa Er (Guest-of-Honor, NTU), Cary Yang

(Speaker, Santa Clara University), Yuhua Cheng (Speaker, Skyworks Solutions), Chaw Sing Ho (ChapterCommittee Member, Chartered Semiconductor Manufacturing), Chee Lip Gan (Chapter Committee

Member, NTU), Xing Zhou (Speaker, NTU, Chapter Committee Member)

The EDS CD ROM Package includesall issues for a given year of Elec-tron Device Letters (EDL) and Trans-actions on Electron Devices (T-ED),as well as the proceedings of thegiven year of the International Elec-tron Devices Meeting (IEDM). TheCDs have an easy to use interfaceand are searchable by author, titleand key word. All materials werepubl ished using Adobe AcrobatTechnology. Included on the CDROM are versions of Acrobat Read-er for Microsoft Windows, AppleMacintosh and UNIX.

Currently, EDS has seven CD ROMPackages available to its members,i.e., 1997, through 2003. Each is avail-able for US $25.00 (US $13.00 for stu-dents). If you would like to receive anorder form for any of these products,please visit the EDS web site at:http:/ /www.ieee.org/society/eds/pubs/pubs.xml and click on the orderform. Please note that this is strictlyan EDS member benefit with a non-member price of $175.00.

You can request the 2004 CD ROMPackage in advance as a subscriptionvia your 2005 IEEE Membership

Renewal Bill when you receive it thisFall. The 2004 EDS CD ROM Packagewill be available in June 2005. Onceyou sign-up to receive the 2004 pack-age via your member renewal bill,you will automatically be billed eachyear for subsequent versions of thepackage. If there is any way we canimprove this offering and make itmore useful please let us know.



ANNUAL CD ROM PACKAGES AVAILABLE

TO EDS MEMBERS

ANNUAL CD ROM PACKAGES AVAILABLE

TO EDS MEMBERS

eds1004.qxd 8/13/04 9:55 AM


The 2004 EDS Region 8 Chaptersmeeting was held in conjunction withthe EDS Administrative Committee(AdCom) meeting at the MirasierraSuites Hotel, Madrid on Saturday, May22nd. The meeting gathered around 30people representing 19 chapters fromRegion 8 (Europe, Africa & MiddleEast). This was the first EDS Region 8Chapters meeting in four years.

Professor Cor Claeys, EDS Vice-President Regions/Chapters, openedthe meeting and greeted everyonewith an introduction to the RegionalChapter Coordination Program.

Professor Mikael Östling, the SRCChair for Region 8 gave the detailed

plan for the activities and also intro-duced a new Vice-Chair, ProfessorEnrico Sangiorgi, University ofBologna, Italy. Region 8 currently hasa total of 39 chapters and there areplans for a number of new studentchapters in the future. In order to sup-port all these chapters, it was decidedlast year to appoint one more SRCVice-Chair. Enrico has generouslyaccepted the Vice-Chair position andwill be the main coordinator for thefollowing chapters; Novosibirsk,Novosibirsk Student Chapter, Tomsk,Sweden, Finland, Poland, Spain, Por-tugal and France.

Vice-Chair, Prof Ninoslav Stojadi-novic, is coordinating; Egypt, Israel,Kiev, Kharkov, Lviv, Yugoslavia,Yugoslavia Student Chapter, BulgariaVarna, Bulgaria, Greece, UK & Ireland,Benelux, and the UniversiteCatholique de Louvain Student Chap-ter. Vice-Chair, Marcel Profirescu,coordinates; Moscow, Saratov-Penza,Nizhny Novgorod, Hungary, Czecho-slovakia, Germany and South Africa.Mikael is coordinating the chapters;Central & South Italy, North Italy,Switzerland, St. Petersburg, Lithuania,Minsk, Georgia, Romania, Turkey, andMiddle East Student Chapter.

Professor Ilesanmi Adesida, EDSPresident-Elect and Vice-President ofEducational Activities, gave a compre-hensive overview of the EDS Distin-guished Lecturer Program. The DLprogram should be used by the differentchapters to facilitate technical seminarsby invitation of lecturers in hot topics.

Professor Magali Estrada, SRC ofLatin America presented a specialreport on the Region 9 activities andalso discussed the establishment ofthe special EDS outstanding studentpaper award for the region. During thechapter reports portion of the meeting12 of the 19 attending chapters gavepresentations.

Dr. Mykhaylo Andriychuk, ChapterChair of the joint MTT/ED/AP/CPMT/SSCWest Ukraine Chapter, gave a thoroughdescription of the activities and plans ofthe coming period. Mykhaylo describedthe forming of the Lviv PolytechnicNational University Student Branch dur-

ing 2003 and its official approval in 2004.Moreover, the joint chapter showed afull activity agenda with a membershipdevelopment prognosis reaching 55 dur-ing the coming year, 18 technical lec-tures and 2 educational events. Theyalso identified several members eligibleto become IEEE Senior Members.

It was very encouraging to see sev-eral student branch presentations. DrAlexander Gridchin reported on boththe Novosibirsk State Technical Uni-versity Student Branch and the jointMTT/ED/COM/CPMT/SSC Novosibirskchapter.

In total, we had three studentbranch reports. Mr. Oray OrkunCellek reported on the ED/SSC Mid-dle East Technical University Stu-dent Branch (as well as theMTT/AP/ED/EMC Turkey chapter)and Mr. Remy Pampin gave a pre-sentation concerning the ED/CASUniversité Catholique de LouvainStudent Branch. Also, representa-tives presented the ED Romania,ED/SSC Bulgaria-Varna, ED Poland,ED Sweden, ED Israel, ED/LEO SouthAfrica, ED Benelux, and ED Spainchapter reports from the variousrespective chapters. In addition, theBelarus, Bulgaria-Sofia, Central&South I taly, Georgia, Russia-Moscow, UK& RI and Yugoslaviarepresentatives were all present andtook part in the various discussions.

Mikael Ostling led an open forumdiscussion and it covered severalimportant issues like meeting formsand frequency, relation with the regionand activation of ED members. Oneidea to promote activities in the chap-ters was to establish an EDS Region 8Award. The SRC team will furtherexplore this idea. The discussion wasvery vivid, but we had to close theopen forum in time for the EDS buffetdinner. In summary, the EDS Region 8Chapters Meeting was much appreciat-ed and it was considered to be a veryimportant forum for the EDS activities.

Mikael ÖstlingEDS Region 8 SRC EAM Chair

KTH, Royal Institute of TechnologyKista, Sweden

2004 EDS Region 8 Chapters Meeting Summary

– Madrid, Spain

2004 EDS Region 8 Chapters Meeting Summary

– Madrid, Spain

Professor Cor Claeys, opens the EDS Region 8Chapters meeting.

A coffee break during the region 8 chaptersmeeting. In the middle Professor Enrico Sangiorgi,the new SRC EAM Vice-Chair in discussion with

IEEE EDS colleagues.

eds1004.qxd 8/13/04 9:55 AM


An IEEE Student Branch gives studentsthe opportunity to meet and learn fromfellow students, as well as faculty mem-bers and professionals in the field. Agood IEEE Student Branch can be oneof the most positive elements in anElectrical Engineering, Computer Engi-neering or Engineering Technologydepartment. IEEE Student Branches areestablished at over 1,000 universitiesand colleges throughout the world. Stu-dent Branch activities offer numerouseducational, technical, and professionaladvantages of IEEE membershipthrough special projects, activities,meetings, tours and field trips.

Establishing an IEEE StudentBranch requires the signatures of 20IEEE Student members on a petition.The petition must specify the name ofthe Branch, and the names of theInterim Student Chair and facultymember who will serve as Counselorof the Branch. The petition must alsobe approved by the Department Chairand two faculty members, who arealso IEEE members above studentgrade. Submit the petition to IEEEStudent Services to begin theapproval process, which includes ver-ification of the IEEE membership ofthe students and the faculty memberson the petition, review of the pro-grams offered at the educational insti-

tution, review and approval by theIEEE Regional Director, the RegionalStudent Activities Committee Chairand the IEEE Regional ActivitiesBoard (RAB). If further information isrequired, please contact: IEEE StudentServices, Phone +1 732 5625527/5392, Fax +1 732 463 3657 or e-mail: [email protected]

Once a university/college has estab-lished an IEEE Student Branch, an affili-ation can be made with one or more ofIEEE’s technical societies to form a Stu-dent Branch ‘Chapter’. There are cur-rently over 300 IEEE Student BranchChapters, with the Electron DevicesSociety having 10 at various institu-tions in a number of regions. Therequirements for the establishment ofan IEEE Student Branch Chapter forEDS are as follows:

• A petition by not less than twelve(12) Student Branch members,who are members of the IEEEtechnical Society, must be sub-mitted to Stacey Waters of theEDS Executive Office at 445 HoesLane, Piscataway, NJ 08854 USAor via fax at 732-235-1626.

• The petition must specify thename of the Student Branch, thename of the technical Societywith which the Student BranchChapter will be affiliated, the

name of the interim Branch Chap-ter Chair and the name of the fac-ulty Advisor, who must be amember of IEEE and the technicalSociety above student grade.

• After the Advisor and the IEEEStudent Branch Executive Com-mittee have approved the peti-tion, it should be sent to the EDSExecutive Office.

• Upon receipt of the petition, theEDS Office will forward it to IEEEStudent Services to verify theIEEE and technical Society mem-bership of individuals whosigned the petition. If the peti-tion is in order, Student Servicesstaff will take the necessaryaction to obtain formal approvalof the petition by the SocietyPresident, the Regional Directorand the Regional Student Activi-ties Committee Chair. StudentServices staff will acknowledgereceipt of the petition and willkeep the faculty advisorinformed of the status of therequest

EDS welcomes the formation ofnew Student Branch Chapters and welook forward to hearing from you. Ifyou have any further questions,please contact Stacey Waters([email protected]).

How to Form an IEEE Student Branch

and Student Branch Chapter

How to Form an IEEE Student Branch

and Student Branch Chapter

OFAC – Where Are We Today?OFAC – Where Are We Today?

Note: On 2 April 2004, IEEE received aruling from OFAC that resolved U.S.embargo-related publishing issues forthe IEEE. The decision confirmedIEEE’s argument that its entire scholar-ly publishing process is exempt fromOFAC restrictions. IEEE immediatelyresumed its normal publicationprocess, including copy and style edit-ing, for authors worldwide. IEEE is nowfocusing its resources on an assess-ment of unresolved membershipissues to determine those that mayrequire further clarification from OFAC.

One of these unresolved issues isrestrictions on scholarly collaboration.IEEE President Arthur Winston report-ed at the June, 2004 Board of Direc-tors’ meeting that “this concerns IEEE

because it is a membership issue thattranscends publication authorship andcould be seen to inhibit a broad rangeof activities that are normally associat-ed with participating as a member of aprofessional society.”

The information below providesthe background leading up to the April2004 OFAC ruling and the current sta-tus of issues affecting membership.

OFAC stands for United StatesDepartment of the Treasury’s Office ofForeign Assets Control (OFAC). In 2001IEEE, during a transfer of funds for aconference to be held in Iran, wasinformed by a financial institution thatthe transfer could not occur due toOFAC restrictions. IEEE researchedOFAC embargoes and found that they

could impact our normal businessoperations including member servicesand publishing activities for individu-als in certain countries. Needless tosay, IEEE was not at all pleased withthis knowledge, so staff and volun-teers have been actively working withthe US government and the publishingindustry to determine what needs tohappen to allow us to continue ourbusiness as usual.

With knowledge of the embargoes,IEEE informed members residing in,Cuba, Iran, Libya and Sudan — coun-tries sanctioned by OFAC — that,because of OFAC regulations, thosemembers would not be able to take

continued on page 31

eds1004.qxd 8/13/04 9:55 AM


USA, CANADA &LATIN AMERICA(Regions 1-6, 7 & 9)

ED NorthernVirginia/Washington- by Hrayr SayadianThe Northern Virginia/WashingtonChapter of the Electron Devices Societyheld three meetings in April and Mayof 2004. Two of the meetings were co-sponsored with other organizations aspart of the ongoing Atlantic NanoFo-rum activities, and the third meetingwas co-sponsored with the Washing-ton/Northern Virginia Chapter of theIEEE LEOS.

The April 29, 2004, nano-technolo-gy presentation was titled “NanotechTools: Accelerating the Developmentof Nanotechnology,” and was moder-ated by Mr. Kitu Bindra of the Nan-otech Team at Burns, Doane, Swecker& Mathis. This presentation featuredMr. Lewis Gruber, CEO and Chairmanof Arryx, Inc., and Dr. Brian Holloway,Assistant Professor of Applied Scienceat College of William & Mary. The pre-senters described instruments andsoftware allowing us to see, touch,manipulate, manufacture, model andsimulate in the nano-world.

The May 26, 2004, nano-technolo-gy presentation was titled “NanotechTools: Part II,” and was moderated byMr. Murty Polavarapu, Chair Elect ofIEEE Northern Virginia Section andSenior Principal Engineer, BAE Sys-tems. This presentation featured Dr.S. V. Sreenivasan, CTO and Co-Founder of Molecular Imprints, andDr. George T. Gillies, Research Pro-fessor of Mechanical and BiomedicalEngineering, University of Virginia.Dr. Sreenivasan described lithogra-phy systems and technology for man-ufacturing applications in the areas ofnano-devices, microstructures,advanced packaging, bio-devices,optical components, and semiconduc-tor devices. Dr. Gillies describednano-scale tools for neuro and cancercharacterization and surgery.

Addit ionally, on May 12, ourChapter co-sponsored with the

Washington/Northern Virginia Chap-ter of the IEEE LEOS an IEEE Distin-guished Lecturer presentation titled“Solid State Lighting” by Dr. MichaelShur, Patricia & Sheldon RobertsProfessor at Rensselear PolytechnicInstitute. Dr. Shur described history,technology, and applications of visi-ble LEDs.

For more information, please seehttp://www.ewh.ieee.org/r2/no_vir-ginia/eds/.

ED Mid-Hudson Valley- by Michael HargroveThe IEEE EDS Mid-Hudson ValleyChapter has had a busy start to 2004.The Chapter Executive Committeemet in early February to plan theupcoming year’s activities and dis-cuss who might be interested inreplacing me as Chairman in 2005.We are still discussing the latter, buthave already started implementingour activity plans. On March 25, 2004,the Chapter hosted the regional IEEESection meeting and invited Dr. KenShepard of Columbia University totalk on CMOS Biochips. The meetingwas very well attended and Dr. Shep-ard provided an excellent talk thatfostered many questions and discus-sion. The talk described his ongoingresearch project to develop CMOSDNA micro arrays, biochips thatincorporate silicon microelectronicstechnology for detection, program-ming, and hybridization control. Thegeneral approach described is one ofhybridization analysis in which targetsingle-stranded DNA binds to immo-bilized DNA probes generating dou-ble-stranded DNA. Dr. Shepard alsodescribed the detection scheme usedto determine if the DNA has bound tothe probe site, including the activeCMOS DNA micro array substratewith integrated photodiodes thatreplace much of the expensive exter-nal bulky measurement equipment.

Our plans for the remainder of theyear include a possible lecture on car-bon nanotubes, and a possible tour ofthe University at Albany AdvancedTechnology Center.

~ Murty S. Polavarapu, Editor

ED/SSC Kitchener-Waterloo- by Arokia Nathan & Emanuel IstrateThe ED/SSC Chapter at the University ofWaterloo and the ED/CA/CPMT/LEOChapter at the University of Torontohave been active in hosting several veryinteresting and well-received lectures.

In 2004, the technical meetings atWaterloo included:

• Prof. Nicolas Wyrsch, Institute ofMicrotechnology, University ofNeuchatel – Microcrystalline sili-con: From Material to Solar Cells(April 20, 2004).

• Dr. Peyman Servati, Laboratoryfor Giga-to-Nano Electronics,University of Waterloo – Mechan-ically Flexible Electronics (May21, 2004).

• Dr. Beng S. Ong, Xerox ResearchCentre of Canada – Towards Print-ed Organic Electronics – Design ofEnabling Materials for Low-CostTransistors (May 3, 2004).

These talks addressed new andemerging research areas in large areaelectronics on glass and flexible plas-tic substrates, intended for multi-disci-plinary researchers, includinggraduate students, from the Facultiesof Engineering and Science.

Prof. Juin J. Liou from the Univer-sity of Central Florida visited the

Regional and Chapter NewsRegional and Chapter News

USA, CANADA &LATIN AMERICA(Regions 1-6, 7 & 9)

Prof. Juin Liou gives a Distinguished Lecture in Toronto on the evolution and recent advances

in RF/microwave transistors.

eds1004.qxd 8/13/04 9:55 AM


Toronto Chapter on April 27, andgave an EDS Distinguished Lecturetitled “Evolution and RecentAdvances in RF/Microwave Transis-tors.” The lecture was held at the Uni-versity of Toronto and was attendedby approximately 20 people. In thetalk, Prof. Liou gave an overview ofthe applications of high-frequencytransistors and then described the dif-ferent classes of transistors, dis-cussing their properties, advantagesand disadvantages.

~ Arokia Nathan, Editor

EDS Distinguished Lecturer/ Chapter Partner Visits Orange County- by Hector J. De Los SantosThe ED/MTT Orange County jointchapter held a seminar on April 192004 at the campus of Skyworks Solu-tions. Prof. Mikael Östling, Head ofDept. of Microelectronics and Informa-tion Technology in KTH – Royal Insti-tute of Technology, Sweden, wasinvited to deliver a distinguished lec-ture on “SiGe HBT Device Technologyfor High-Speed Applications”. Sky-works Solutions sponsored this semi-nar. The chapter chair, Dr. Hector J. DeLos Santos, and Dr. Yuhua Cheng ofSkyworks Solutions, hosted the semi-nar. In this seminar, Prof. Östlingreviewed the recent trend of SiGe BiC-MOS for RF wireless and high-speedoptical applications and summarizedthe key process features and perfor-mance of advanced SiGe bipolarprocesses. A device with novel collec-tor structures is discussed as an exam-ple of demonstrating advancedprocess features. A mixed-mode

device and circuit simulation method-ology was also presented to investi-gate the influence of collector dopingand Ge-profiles on the intermodula-tion distortion.

The lecture took about 50 minutesand 20 minutes for questions andanswers. Prof. Östling’s talk was wellreceived by the audience. After theseminar, a group of people continuedanother 20-minute discussion withProf. Östling on the technical contentsin the presentation. About 30 atten-dees from universities and companiesattended the seminar.

~ Sunit Tyagi, Editor

EDS Distinguished Lecturer/ Chapter Partner VisitsVenezuela-by Adelmo Ortiz-CondeChapter Partner and AdCom memberProf. Juin J. Liou, from University ofCentral Florida, visited the ED

Venezuela Chapter 1-2 April 2004. Dur-ing his visit he met with chapter offi-cers and other members to discussand support several operationalaspects of the chapter’s activities. Thevisit to the Chapter was combinedwith a Distinguished Lecture deliveredby Prof. Liou. The two-hour technicaltalk, entitled “Recent Advances andModeling of RF MOS Devices,” waspresented at the “Universidad SimónBolívar” and attended by numerousgraduate students and research staff.Prof. Liou, who is a well knownresearcher in the areas of semiconduc-tor device modeling/simulation, RFdevice/IC design, and semiconductormanufacturing, had ample opportunityto interact with the audience, and todiscuss about how MOSFETs arepresently considered for radio fre-quency applications due to the aggres-sive feature size reduction in the pastseveral years. In addition and in con-junction with these activities, Prof.Liou attended a working meeting ofthe Organizing Committee of the fifth“IEEE International Caracas Confer-ence on Devices, Circuits and Sys-tems” (ICCDCS). This conference hasbeen organized by this Chapter since1995 and is held biannually within theCaribbean basin. The coming one willtake place in the Dominican Republicduring the first week of November2004. Chapter members thank and rec-ognize Prof. Liou’s valuable and con-tinuous support of our chapter’sactivities.

For additional information, contactProfessor Adelmo Ortiz-Conde [email protected].

~ Adelmo Ortiz-Conde, EditorFrom left to right: Dr Carina Zaring, Prof. Mikael Östling, Dr. Yuhua Cheng, and Dr. Hector J. De Los Santos

From left to right: Francisco García Sánchez, Víctor Guzmán, Juan Muci, Juin Liou, and Adelmo Ortiz-Conde.

eds1004.qxd 8/13/04 9:55 AM


EUROPE, MIDDLEEAST & AFRICA(REGION 8)

MTT/ED Republic of Georgia - by Revaz S. ZaridzeThe Georgia Chapter was founded in1996. To understand the importance ofthis organization for Georgian scien-tists several serious factors should betaken into consideration. At that timeGeorgia was one of the republics in thepost-Soviet space, where together withthe economy, the science and the tech-nology were also subject to destructiveprocesses. For years the overwhelmingmajority of scientists and engineershad been working in the defenseindustry of the former Soviet Unionand due to the specific character oftheir work they were completelyexcluded from the world community ofscientists. Finally, with the breakdownof the Soviet Union, financing of thescientific activity practically stoppedand supply of organizations with scien-tific literature was interrupted.

Last year’s Georgia Chapter waswidely represented by experiencedscientists and skilled engineers insemiconductor technology, materialscience, RF engineering and instru-ment-making. This year the foreignfinancial support of Georgian scientif-ic schools is a single source forpreservation and developing of theirscientific potential.

Along with such organizations andprograms as the International Scienceand Technology Center (ISTC), theScience and Technology Center inUkraine (STCU), the NATO ScienceProgram and Eurocommission Pro-grams, IEEE has already made a sig-nificant contribution to the solution ofour problems. At present, the GeorgiaChapter is joint with MTT/ED/AP.

It is interesting to trace the change inthe number of Chapter members since1996. In the first years, when IEEE com-pletely undertook a financial support,the Chapter consisted of about 24members. Today there are 18 Chaptermembers, but only ten of them are sup-ported by IEEE, whereas eight mem-bers became self-financing. This maybe regarded as progress. We hope thatas the economic situation in Georgiaimproves, the number of Chapter mem-bers will increase and they will change-over to full self-financing.

Initially the Georgia Chapterinvolved mainly scientists and engi-neers from Tbilisi State University, butnow the circle of participants hasbroadened. At different periods it con-sisted of members from GeorgianTechnical University, Institutes ofPhysics and Cybernetics of the Acade-my of Sciences of Georgia andResearch and Production Association“MION”.

Now, we believe that the IEEE mem-bership has the following advantages:

• First, to be a member of the IEEEis rather prestigious and here wesee an interesting moral factor.

• Second, IEEE facilitates integra-tion of the Georgia Chaptermembers into the world commu-nity of scientists by participationin regular meetings of this orga-nization and grants them a finan-cial support. An opportunity toparticipate in international pro-fessional conferences and sym-posiums on preferential terms isan important aspect of IEEEmembership.

• Third, some of Georgia Chaptermembers can pay their IEEEmembership and scientific litera-ture on the reduced rate basis.

The main goal of the GeorgiaChapter activity is to attract scientistsand engineers who want to use thepossibilities of IEEE via distribution ofliterature for members and publiclibraries and the organization of semi-nars and workshops.

Finally, we support a regularIEEE/EDS Region 8 Chapters Meetingin Georgia. Optimally, it can be a com-bined with a Workshop in ElectronDevices with the participation of inter-national experts.

The reasons for this proposal are:• the new, young government of

Georgia is solving questions ofpriorities for the country, one ofwhich should be Hi-Tec; there-fore this meeting together with aconference, will attract the gov-ernment’s attention to the prob-lems of electronics;

• no doubt that this event willevoke interest of young special-ists and students in the field ofElectron Devices and will stimu-late their activity.

• meeting participants could famil-iarize themselves with Georgia –a country with beautiful nature,

ancient culture and unique hospi-tality.The prerequisites are:

– intensive stabilization of thesituation in the country;

– availability of meeting halls perfectly equipped with required facilities;

– availability of first-class hotels with modern com-munication systems.

The Georgia Chapter will be happy totake part in the organization of thisMeeting. One can also rely on the assis-tance of the government of Georgia.

ED/MTT/AP St. Petersburg - by Margarita F. SitnikovaSome important events have beenorganized and held by the IEEEED/MTT/AP St. Petersburg Chapterwith good success.

First, the 2004 Regional OlympicGames on Radio Engineering andTelecommunications was held in St.Petersburg State University of Electri-cal Engineering ‘LETI’ on April 24.About 40 undergraduate students par-ticipated in this event.

Second, the 11th International Stu-dent Seminar on Microwave Applica-tions of Novel Physical Phenomenawas held at LETI University June 7-9.The total number of accepted paperswas 36 and the total number of partici-pants was 135. This seminar was orga-nized by Professors Orest and IrinaVendik from LETI University, Russiaand E. Kolberg from Chalmer Techni-cal University, Göteborg, Sweden. Forthe past 10 years, this seminar hasbeen held in many European countriesand has been very successful. The aimof the seminar is to bring together thegraduate and postgraduate studentsfrom the world and to provide theplace for exchange of scientific experi-ence in the field of microwave applica-tions of physical phenomena.

During the seminars six sessionson various scientific directions wereorganized by many outstanding pro-fessors such as Irina B. Vendik, ‘LETI’University, Russia, Sergei A.Tretyakov, Helsinki University of Tech-nology, Finland, Heli Jantunen, Uni-versity of Oulu, Finland, AntinVelichko, University of Birminghamand Peter K. Petrov, London SouthBank University (UK), etc. Graduateand postgraduate students from vari-ous countries like Switzerland, Swe-den, Belgium, Turkey, Greece, Spain,

EUROPE, MIDDLEEAST & AFRICA(REGION 8)

eds1004.qxd 8/13/04 9:55 AM


Ukraine and from various Russiancities like St. Petersburg, Moscow,Nizhny Novgorod presented their sci-entific results in the seminar.

As a result, the volume of Proceed-ings with all presented papers waspublished. Some report from thisseminar was published in one of lead-ing Russian newspapers (‘Izvestija’)on June 15, 2004.

~ Alexander V. Gridchin, Editor

2004 International Conferenceon Microelectronics (MIEL)- by Ninoslav StojadinovicThe 24th International Conference onMicroelectronics (MIEL 2004) was heldon 16-19 May 2004 at the Faculty ofElectronic Engineering, University ofNis, Serbia and Montenegro. The con-ference was organized by the IEEEYugoslavia Section and ED/SSC Chap-ter, in co-operation with the Faculty ofElectronic Engineering and Ei-HoldingCo.-Nis, and under the auspices of theSerbian Ministry of Science and Envi-ronment Protection, Yugoslav Acade-my of Engineering, Society for ETRAN,and City Assembly of Nis.

Two workshops, “Power Devicesand ICs” and “Microsystem Technolo-gies”, along with an opening addressentitled “The Objectives of the 6thFramework of the European Commis-sion: Research Training Networks,Nanotechnologies and Eligibility ofParticipants from Western BalkanCountries”, given by Dr. GordanaPopovic, representative of theResearch Directorate General, Euro-pean Commission (Brussels, Belgium),attracted a lot of attention and was anexcellent introduction to the main tech-nical program. The technical programconsisted of eight sessions: PowerDevices and ICs, Microsystem Tech-

nologies, Modeling and Simulation,Opto and Microwave Devices, Process-es and Technologies, Circuit Design,Reliability Physics, and System Design.

A total of 47 domestic and 109 for-eign participants took part at the con-ference, representing 34 countriesfrom all over the world (Algeria, Aus-tralia, Austria, Belgium, Bulgaria, Chi-na, Czech Republic, Estonia, Finland,France, Germany, Greece, Hong Kong,India, Iran, Ireland, Israel, Italy, Japan,Korea, Macedonia, Mexico, Poland,Romania, Russia, Serbia and Montene-gro, Slovak Republic, Spain, Taiwan,The Netherlands, Turkey, Ukraine,United Kingdom, and USA). A total of22 keynote speakers were invited and135 regular papers (71 oral and 64posters) were presented. The confer-ence proceedings (two volumes, 802pages) were published through theIEEE Book Broker Program.

The keynote invited speakers were:N. Shammas, Staffordshire University,Stafford, United Kingdom (“Forwardand Reverse Recovery Behaviour ofDiodes in Power Converter Applica-tions”), J. Lutz, Chemnitz University ofTechnology, Germany (“Fast RecoveryDiodes-Reverse Recovery Behaviourand Dynamic Avalanche”), P.A. Maw-by, University of Wales Swansea, Unit-ed Kingdom (“Advanced JunctionIsolation Structures for Power Integrat-ed Circuit Technology”), J. Millan,CNM-CSIC, Barcelona, Spain (“RecentDevelopments in SiC Power Devicesand Related Technology”), M. Darvish,Vishay-Siliconix, Santa Clara, USA(“Advanced Power devices for DC-DCConversion”), H. Detter, Technical Uni-versity of Vienna, Austria (“Concept ofVirtual MST Factory”), G. Wachutka,Munich University of Technology, Ger-many (“Predictive Simulation ofMicrodevices and Microsystems: TheBasis of Virtual Prototyping”), R. Plana,LAAS-CNRS, Toulouse, France (“Pow-er Capabilities of RF MEMS”), M. Bazu,National Institute for Microtechnolo-gies, Bucharest, Romania (“ConcurrentEngineering – A Tool for ImprovingMEMS Research and Manufacturing”),T. Rijks, Philips Research, Eindhoven,The Netherlands (“MEMS TunableCapacitors and Switches for RF Appli-cations”), I. De Wolf, IMEC, Leuven,Belgium (“Instrumentation andMethodology for MEMS Testing, Relia-bility Assessment and Failure Analy-sis”), J. Burghartz, Delft University of

Technology, The Netherlands (“Add-On Process – An Economic Enhance-ment for High-Frequency SiliconTechnology”), I. Adesida, University ofIllinois at Urbana-Champaign, USA(“GaN Electronics with High ElectronMobility Transistors”), V. Palankovski,Vienna University of Technology, Aus-tria (“Analysis of High Speed Het-erostructure Devices”), P. Yu,University of California, San Diego,USA (“Microwave Photonics Links inModern Networks: Component Tech-nology”), K. Kim, Samsung ElectronicsCo., Kyungki-Do, Korea (“Future Mem-ory Technology Including EmergingNew Memories”), O. Nieto-TaladrizGarcia, Technical University of Madrid,Spain (“High Speed Circuits for Genet-ics Applications”), Y. Papananos,National Technical University ofAthens, Greece (“Inductor Over MOS-FET: Operation and Theoretical Studyof a CMOS RF Three-DimensionalStructure”), V. Liberali, University ofMilano, Crema, Italy (“CMOS AnalogDesign for Wireless Communication”),K. Lee, KAIST, Daejeon, Korea(“MICROS: An Experimental Coin-Sized, Low Cost, Low-Power CMOSZigBee-Like Radio at 2.4 GHz as anUbiquitous Network Node”), andJ. Liou, University of Central Florida,Orlando, USA (“Design and Modelingof On-Chip Electrostatic Discharge(ESD) Protection Structures”).

Based on evaluation of the quality ofthe papers and presentations, three BestPaper Awards were presented to J. Mil-lan (CNM-CSIC, Barcelona, Spain) for anoral paper “Direct Measurements ofSelf-Heating Effects at the Drift Region of600V PT-IGBTs“, to H. Hein (FraunhoferInstitute for Integrated Circuits, Erlan-gen, Germany) for a poster paper “AFully Integrated 0.35 mm CMOS MMICAmplifier for Short Range 433 MHz ISMBand Transceiver Application“, and to F.De Paola (University of Naples FedericoII, Italy) for a student paper “A ScalablePhysical Model for Coplanar WaveguideTransition in Flip-Chip Applications“.The international scientific journalMicroelectronics Reliability also award-ed the paper “Electrical Properties andConduction Mechanisms in HfxTiySizOFilms Obtained from Novel MOCVD Pre-cursors“ by A. Paskaleva et al., Instituteof Solid State Physics, Bulgarian Acade-my of Sciences, Sofia, Bulgaria.

As is the past, the social program ofthis year’s conference issue was partic-

Participants of the 11th International StudentSeminar on Microwave Applications of Novel

Physical Phenomena

eds1004.qxd 8/13/04 9:55 AM


ularly rich, with a conference banquetand gala-dinner as highlights. In gener-al, besides the high quality of presenta-tions, the MIEL conferences areflavored by the friendly atmosphereand great hospitality of the organizersand people of Nis. This special charmadds to the very positive impressionsparticipants bring from MIEL and Nis,and is one of the reasons why onerarely attends MIEL just once: one whocomes once will almost certainly comeagain. So, we are very much lookingforward to welcoming old and newfriends at MIEL 2006 in Nis.

11th International Conference:“MIXED DESIGN OFINTEGRATED CIRCUITS ANDSYSTEMS” - MIXDES’2004- by Andrzej Napieralski

The 11th International ConferenceMIXDES 2004 was held on 24-26 June2004 in Szczecin, Poland. The event wasorganized by The Technical University ofLódz (DMCS-TUL), Poland, in coopera-tion with The Warsaw University ofTechnology. The conference was co-sponsored by The Institute of Electricaland Electronics Engineers, Inc., IEEEED/CAS Poland Chapter, REASON -

Research and Training Action for Systemon Chip Design IST-2000-30193, Ministryof Scientific Research And InformationTechnology, and Section of Microelec-tronics and Section of Signals, ElectronicCircuits and Systems of the Committeeof Electronics and Telecommunication ofthe Polish Academy of Sciences.

In addition to the regular program,six tutorials, coordinated by Prof. LechJózwiak from Eindhoven University ofTechnology (The Netherlands), wereorganized and presented in the frameof FP5 European project REASON:“Research and Training Action forSystem on Chip Design”. The REA-SON Tutorial Event accompanyingMIXDES’2004 were composed of thefollowing half-day parts:

• “Measurement, Modeling andSimulation of Thermal Dynamicsin Microelectronic Structures” -A. Poppe (Budapest Univ. ofTechn. and Econom., Hungary),M. Janicki (Technical Univ. Lodz,Poland),

• “Embedded Application SpecificSystems on Silicon” - B. Mes-man, O.P. Gangwal, J.L. vanMeerbergen (Philips, TechnischeUniversiteit Eindhoven),

• “Behavioral Design Using VHDL”- K. Siekierska, D. Obrebski (Insti-tute of Electron Technology,Poland),

• “Methods for Testing of Electron-ics Systems” - S. Mosin (VladimirState Univ., Russia), R. Ubar(Tallinn Tech. Univ., Estonia), R.Seinauskas (Kaunas Univ. ofTechn., Lithuania),

• “Frontiers of Nanoelectronics” -V. Nelayev (Belarusian StateUniv. of Informatics and Radioel.,Belarus), A. Melker (St. Peters-burg State Tech. Univ., Russia),

V. Labunov (Belarusian StateUniv. of Informatics and Radioel.,Belarus), P. Vityaz F., S. Zhdanok,S. Gaponenko, V. Kabanov, S.Kilin (National Academy of Sci-ences, Belarus),

• “Analog and RF design” - M. Hris-tov, E. Gadjeva (Tech. Univ. Sofia,Bulgaria), V. Lantsov (VladimirState Univ., Russia), M. Tomaska(Slovak Univ. of Techn., Slovakia).

In addition to the regular confer-ence program, a special session:“Advanved Compact Modeling and itsStandardization” was organized by Dr.Wladyslaw Grabinski from MotorolaModeling Center in Geneva. After thediscussion with Prof. Hiroshi Iwaifrom Tokyo Institute of Technology,Japan, and Dr Sadayui Yoshitomifrom Toshiba Semiconductor, Japan,the organization of a new “ToshibaSpecial Session” has been plannedfor MIXDES 2005 in Kraków.

The conference was attended byover 140 scientists from 29 countriesfrom all over the world (Algeria, Aus-tralia, Austria, Belarus, Belgium, Bulgar-ia, Canada, Czech Republic, Estonia,Finland, France, Germany, Greece, Hun-gary, Italy, Japan, Lithuania, Nether-lands, Poland, Romania, Russia,Slovakia, Slovenia, Spain, Sweden,Switzerland, UK, Ukraine, and USA).During the conference six invitedpapers and over 120 regular paperswere presented at oral, poster, and spe-cial sessions. The conference proceed-ings (684 pages, ISBN 83-919289-7-7)and CD ROM were published by DMCSTUL.

The keynote invited speakers were:Hiroshi Iwai, Tokyo Institute of Technol-ogy, Japan, (“Future Scaling of CMOSDevices”), Salvatore Baglio, Universityof Catania, Italy, (“Development of Inte-grated Microsensors for Chemical andBiochemical Applications”), H. AlanMantooth, University of Arkansas, USA,(“Compact Modeling for Silicon Car-bide Power Devices”), Stephan Wagn-er, Technische Universität Wien,Austria, (“Mixed-Mode Device and Cir-cuit Simulation”), R. “Ben” Bennetts,Bennetts Associates, UK, (“ElectronicProduct Life-Cycle Design-For-Test: Sta-tus and Future Challenges”), andErhard Kohn, University of Ulm, Ger-many, (“Diamond Technology forMEMS and Electronics”).

Based on evaluation of the quality ofthe papers and presentations, eleven

Dr. Aleksandar Popovic, Serbian Minister ofScience and Environment Protection, is giving the

opening address at MIEL 2004

A part of MIXDES 2004 participants during the excursion around Szczecin.

eds1004.qxd 8/13/04 9:55 AM


Best Paper Awards were presented. During the conference a joint meet-

ing of the IEEE ED Chapter and Sectionof Microelectronics of the Committee ofElectronics and Telecommunication ofthe Polish Academy of Sciences tookplace. As is among the best traditionsof MIXDES, the social program of thisyear’s conference was particularly rich,with a welcome party and conferencebanquet as highlights. The participantsof the conference had also a possibilityto learn more about Szczecin. Unfortu-nately due to heavy rain, the plannedfootball match between the conferenceorganizers and participants was can-celled. The organizers hope that nextyear the weather will be more conve-nient and the football match “Polandagainst the Rest of the World” will takeplace in Kraków next year.

The Preliminary Call for Papers for thenext 12th MIXDES Conference is alreadyavailable at http://www.mixdes.org/downloads/call2005.pdf. More informa-tion about the MIXDES Conference canbe found at http:// www.mixdes.org.

EDS Distinguished LecturerVisits Hungary- by Gady GolanOn Thursday, June 24, 2004, at theTechnical University of Budapest, Hun-gary a Distinguished Lecturer talk wasgiven by Professor Gady Golan, enti-tiled “From science to industry - PTCbarium titanate crystals as self-regulat-ed heaters/sensors”.

Abstract: Positive temperaturecoefficient (PTC) thermistors as heat-ing elements are electronic devicesthat utilize barium titanate crystals asopposed to metallic filaments to gen-erate heat. When used as a heating

element the PTC thermistor is electri-cally heated until it becomes highlyresistive. The high resistance reducesthe power absorbed. A state of equi-librium is then established in whichthe electrically absorbed power equalsthe thermally dissipated power. Incontrast to other types of heating ele-ments, PTC thermistors are “self-regu-lated”, they adapt their electricallyabsorbed power automatically to thethermally dissipated power.

Chairman of the meeting: Prof.Tibor Berceli

~ Andrzej Napieralski, Editor

ED Israel -by Prof. Gady Golan; A. On Wednesday, June 9, 2004, at the

Holon Inst. of Technology (HAIT) - Holon.

Subject of meeting: “Lighting”, ByDr. Inna Nissenboim,

Abstract: Lighting consists of sev-eral fields of study: physics, mathe-matics, optics, engineering,physiology, ergonomic and architec-tural design. In this talk we discussedthe quality of light on a qualitativebasis. The physiology of the eye willbe briefly presented. Also, systems forcolor definition, practical units andlight sources and luminaries, werepresented. Furthermore, we discussedsome topics of regulations and stan-dards, calculate light installation prop-erties and, finely, described practicalimplementations in buildings.

About the author: Inna Nis-senbaum holds B.Sc., M.Sc. and Ph.D.degrees from Tel Aviv University (Elec-tric and Electronic Engineering). Energystudies at the Gordon Institute. Since1987, Inna Nissenbaum has an exten-sive industrial record in lighting engi-neering and design (such as Beer-ShevaCourt Building, Tourism Center of Old

City of Acre, Israeli New Lighting Regu-lation etc.). Inna Nissenbaum is activewithin the societies of Electrical Engi-neering, chairman of the Israeli LightingSociety and plays an active role inenhancing the dialog between academyand industry on this matter. Chairmanof the meeting: Prof. Gady Golan -

50 people, students and academicstaff, attended the meeting at HAIT.B. On Wednesday, June 16, 2004, at

the Holon Inst. of Technology (HAIT) - Holon.

Subject of meeting: “The Zero-crossing nonlinearity and switched cir-cuits; an initial design principle forconsideration: linear or nonlinear?” ByDr. Immanuel Gluskin,

Abstract: The nonlinearity associ-ated with a use in the time domain ofzeros (e.g. zero-crossings) of statevariables is considered. The way fromsome equational examples that intro-duce this nonlinearity, to a designprinciple for switched circuits, isstraightforward. The point is to know,in terms of switching, whether theswitched system being designed willbe linear or nonlinear.

About the author: EmanuelGluskin received his M.Sc. in PhysicalEngineering from Leningrad Polytech-nical Institute (Faculty of Radio-Elec-tronics), and his Ph.D. in ElectricalEngineering from Ben-Gurion Univer-sity, Beer-Sheva. He has industrial andresearch experience, and has taughtB.Sc. students in Israel for many years.His research interests include basicsystem theory, electrical and physicalaspects of lighting circuits, quality ofthe power consumption, spatial filtra-tion, signal processing and the prob-lem of autistic vision disturbance.

Chairman of the meeting: Prof.Gady Golan -

50 people, students and academicstaff, attended the meeting at HAIT.

~ Gady Golan, Editor

Exmatec04- by Jean CamasselThe seventh International Workshopon Expert Evaluation & Control ofCompound Semiconductor Materials &Technologies (EXMATEC 04) tookplace in Montpellier, France, June 1-4,2004. It was attended by 112 partici-pants from all over Europe and addi-tional countries like Australia, Japan,South Africa and the USA. The centraltopic of the Conference was on the

From right to left: Prof. Tibor Berceli, Prof. GadyGolan and Prof. Imre Zolomy at the Technical

University of Hungary

Two invited speakers of MIXDES: Prof. Hiroshi Iwaifrom Tokyo Institute of Technology, Japan (center)

and Prof. Salvatore Baglio from University of Catania,Italy (left) during the welcome party discussion withProf Mitiko Miura-Mattausch, Prof. Andrzej Kobus,Dr Wladyslaw Grabinski and Dr Sadayui Yoshitomi.

eds1004.qxd 8/13/04 9:55 AM


development, improvement and appli-cation of advances investigation meth-ods devoted to the fabrication andevaluation of compound semiconduc-tor materials and devices.

The technical program covered 3days of presentations with 11 invitedspeakers, 20 contributed presenta-tions and 75 poster papers arrangedin 2 sessions. With respect to the pre-vious EXMATEC conferences, one hasto notice an increasing participation ofthe industrial companies; some ofthem contributing directly to the tech-nical program, some exhibiting theirlatest development.

The Introductory Session reviewedthe state of the art of layer transfertechnologies. Three successive pre-sentations covered the whole range oftechnologies running from bondedSiGe layer onto Si wafers for strainedsilicon applications to large area solarcells produced by epitaxial lift-off and,finally, molecular bonding of InPdetectors on processed Si wafersusing standard “pick and place”machines.

Most of the Growth and Charac-terisation sessions were devoted towide bandgap semiconductors. Thepresentations included the use of the“checkers-board” carbonisationmethod to reduced the bow of 2 inch3C-SiC wafers on Si, as well as thegrowth of AlN substrates by the PVT(Physical Vapor Transport) methodor the investigation of defects inbinary and ternary wide gap II-VIcompounds using the synchrotronradiation facilities. Concerning GaNand related compounds, the mainemphasis was on the reduction ofthreading dislocations by in-situ pat-terning; on the properties of InNmaterial, on the bowing and non-random distribution of atomicspecies in InGaN and AlGaN epitaxi-al layers, on the investigation ofdeep levels by combined capacitancetransient techniques and, finally, onthe deposition of highly resistiveiron-doped GaN layers.

Concerning some more advancedcharacterisation techniques, the focuswas either on 3d-surface metrologyusing interferometry or in-depth char-acterisation of epitaxial layers usingphotoreflectance and spectroscopicellipsometry. Time-resolved four wavemixing was also reviewed, as wellhigh resolution glow discharge mass

spectroscopy for control of the chemi-cal composition.

Optoelectronics covered manydifferent topics, including the evalu-ation of dilute nitride semiconduc-tors for optical communicationsystems, the review of nitride-basedlaser manufacturing, the develop-ment of Sb-based laser diodes emit-ting at room temperature at 2.61 µmin the CW mode. The radiat iverecombination in InAs-based QDlasers, the defect-states in AlGaNsolar-blind UV photodetectors andthe degradation signature inAlGaAs-based high-power laserarrays were also considered.

Concerning the field of electronicdevices, the source of noise in Hallsensors based on III-V heterostructurewas reviewed. Then the generation ofterahertz frequencies by plasmawaves in nm gate HEMTs was consid-ered and the role of mesa-etching in4H-SiC pin diodes was demonstrated.The preparation of novel group III-nitride devices for micro andnanomechanical MEMS concludedthe presentations.

~ Cora Salm, Editor

ASIA & PACIFIC(REGION 10)

ED/SSC Bangalore -by Dr P R SureshThe Chapter along with National Semi-conductor, India conducted a 5-hourseminar on May 17th. The topic was“Art of Analog Electronics” presentedby Bob Pease, National Semiconduc-tor, USA. This event received a phe-nomenal response with more than 200attendees. Bob’s lively presentationensured that the audience stayedthrough the event. The topics included

amplifiers, power management appli-cations, linear regulators, and dataconverters. The audience appreciatedthe issues discussed in the practicalimplementation of the circuits.

The Chapter co-sponsored a two-week “VLSI Education Workshop”along with the VLSI Society of India,conducted at SJCE, Mysore from May24th to June 5th. The workshop wasspecifically targeted towards the facul-ty members of engineering collegesengaged in postgraduate courses inVLSI. The attendance was limited toabout 35, so that a better interactionwas possible. The workshop also hadlab sessions to enable the attendeesto get hands on exposure to variousdesign tools. Several leading expertspresented the lectures from academiaand industry. Some of the topics cov-ered were physics of sub-micron MOStransistors, analog CMOS design, CADtools for VLSI circuits, testing and ver-ification, VLSI system architecture, fil-ter design and reliability of IC’s.

The third event was held on 28June. This was a technical seminar byProf. Bhargab Bhattacharya, IndianStatistical Institute on “Energy-AwareTesting of VLSI Circuits”.

ED/MTT India-by K. S. ChariDuring the period April-June 2004, theChapter activities focused on the fol-lowing events:

- Two invited lectures were orga-nized. The first talk on “Evolution ofSemiconductor Manufacturing: Designand Technology Issues” was deliveredby Mr. Kuldip Sethi, President andCEO of Sentient AMR TechnologiesInc, Sunnyvale, CA, U.S.A on 24 May.The second talk “OptoelectronicDevices for IT and Bio-medics” wasgiven by Prof D. K. Gautam, a JSPS

ASIA & PACIFIC(REGION 10)

A section of attendees to NASET-2004 held at Kurukshetra University, Kuruk

eds1004.qxd 8/13/04 9:55 AM


Fellow and Head of Electrnic ScienceDepartment in North Maharashtra Uni-versity, Jalagaon, Maharashtra on 16June. Both these talks, held at theDepartment of Information Technolo-gy, attracted large audiences.

- A 2-day National Conference onMicrowaves and Optoelectronics(NCMO-2004) was organized at Babasa-heb Ambedkar University, Aurangabadduring the period 29-30 June. Theevent held under the active encourage-ment and co-sponsorship of the chap-ter also attracted co-sponsorship andfunding from the Ministry of Communi-cations and Information Technology,the University Grants Commission, theDepartment of Science and Technologyetc. The conference was attended by300 participants and featured over 100presentations covering the theme ofthe conference. Prof M. D. Shirsat of theDepartment of Physics coordinated theevent at the University.

- Electronic Science Department ofKurukshetra University, with activeco-sponsoring of the Chapter, orga-nized a 2-day National Symposium ofElectronics Technology (NASET-2004) from 19-20 March. This event,held as a special event exclusively tothe student community, attractedover 300 students from differentEngineering Colleges and Universi-ties in the northern region. NASET-2004 featured the events of the S&T

Quiz, Logic Design Context, PosterContest, Hardware contest and Pre-sentation on Computers and Informa-tion Technology and Electronics. Theevents attracted entries in excess of150 from which a condensed list ofselections was drawn for attendance.The Chapter awarded a total of 12prizes for the outstanding candidatesin these events. The winners of theseevents are:

S&T Quiz: Mr. Jitender Saini, Mr.Hinashu Sekahr Pandey (1st Prize) andRitesh Saini and Rohit Bharadwaj (2ndPrize) from NIT, Kurukshetra. Mr. AmitGupta of DVIET, Karnal received the3rd Prize.

Poster Contest: The winnerswere Mr. Vedpal Singh (1st Prize) andMs Meenu Srivastava and Ms SeemaTomar (2nd Prize) from Department ofElectronic Science, Kurukshetra andMr. Gaurav Kumar and Satish Kaushik(3rd prize) from DVIET.

Hardware Exhibition: SandeepSharma, Mr. Vichal Verma (1st prize)and Ms Jasbir Kaur (2nd Prize) fromDept of Electronic Science. 3rd Prizewent to Mr. Sachin Gupta of HEC,Jagasdhari.

Paper Presentation: 6 awardswere won. The prizes went to Mr.Guntas Randhawa and Ms Meera Jin-dal; Mr. Mohit Handa and IshpreetSingh of PEC Chandigarh (1st Prizes),Mr. Sameer Mehta and Mr. Amit Goel

Prasanna of DEC, New Delhi and Mr.Vikram Singh and Mr. Kamal Kant ofKUK (2nd Prize).

Prof A. K. Chawla, Vice-Chancellor,inaugurated the event. Prof Anil Vohraand Prof P. J. George along with facul-ty were local hosts at Kurukshetra Uni-versity. NASET has been playing therole of fostering innovation in students.A snapshot of the event is attached.

ED Malaysia - by Burhanuddin Yeop MajlisThe ED Malaysia Chapter, togetherwith the Institute of Micro engineeringand Nanoelectronics (IMEN), Universi-ty Kebangsaan Malaysia successfullyorganized a workshop on Nanotechnol-ogy 3–4 June 2004 at the Merriot HotelPutrajaya. The workshop covered all-important aspects of nanotechnolo-gies, giving an introduction to buddingenthusiasts of the Nanoworld. It wasattended by academia and researchersrepresenting almost all universities andrelated research institutions from allover Malaysia that have an interest innanotechnology. The main speakerwas Dr. Joydeep Dutta from the AsianInstitute of Technology (AIT). Dr. Duttahas been associated with the SwissFederal Institute of Technology since1993. From 1997 to 2001, he worked forseveral companies in technical andmanagerial qualities, namely Unaxis,Phonak, CNET and Bobst. He has beenthe member of the board of two com-panies working in high technologyelectronics and environmental consult-ing, respectively. Dr. Dutta has built upthe course on nanomaterials alongwith Prof. Hofmann in 1997, probablythe first of this kind in Europe and hasdelivered it in EPFL since 2002. Dr. Dut-ta is a member of several professionalbodies, including the Asia-Pacific Nan-otechnology Forum (APNF), Institute ofNanotechnology, UK Futurists Net-work, The Science Advisory Board, TheNanotechnology Group, InternationalMicroelectronics & Packaging Society,and European Consortium on Nanoma-terials amongst others. His broadresearch interests include nanomateri-als and nanotechnology, self-organiza-tion, microelectronic devices,nanoparticles and its applications inelectronics and biology.For more information, please contact:Prof. Burhanuddin Yeop MajlisInstitute of Microengneering andNanoelectronics (IMEN) University

Participants of Nanotechnology Workshop. Third from left is the ED Chapter Chair, Prof. BurhanuddinYeop Majlis, and the main speaker, Dr. Joydeep Dutta

eds1004.qxd 8/13/04 9:55 AM


Kebangsaan Malaysia. TEL: 603-89265861, FAX: 603-89259080, E-Mail:[email protected].

CPMT/ED/R Singapore -by Dr. Kin Leong PeyThe Chapter organized the followingED-related technical talks during April-June 2004:(1)On April 15, Professor Chandan

Kumar Sarkar (IEEE EDS distin-guished lecturer) of Jadavpur Uni-versity, India gave a talk on “GateOxide Degradation in MOS “DevicesUnder High Field Stress-BreakdownIssues and the Model”

(2)On May 20, Professor Kishor S.Trivedi of Duke University, USAgave a talk on “Reliability Modeling:Tools & Techniques”

(3)On May 27, Dr. Lakshmi Kanta Beraof Institute of Microelectronics, Sin-gapore gave a talk on “Strained-SiMOSFETs and High-K GateDielectrics for Advanced CMOSApplications”.These technical talks were well

attended by members, professionalsand students.

A Workshop and IEEE EDS Mini-col-

loquium on NAnometer CMOS Tech-nology (called “The 4th WIMNACT-Sin-gapore”) scheduled for 12 July 2004was organized and sponsored by IEEECPMT/ED/R Singapore Chapter, and isco-sponsored by the IEEE EDS Distin-guished Lecturer Program & Subcom-mittee for Regions/Chapters, and theSchool of Electrical & Electronic Engi-neering (EEE), Nanyang TechnologicalUniversity (NTU). In conjunction withthe Chapter, the event will be co-hostedby the Silicon Technology, Nanoelec-tronics & Devices, and ComputationalNano-Electronics Groups of the Micro-electronics Division, School of EEE,NTU. Two IEEE Fellows and three DLswill present their latest research workon nano-scale devices. Further detailsregarding WIMNACT can be found in aseparate article in this issue of theNewsletter.

The 2004 International Symposiumon the Physical and Failure Analysis ofIntegrated Circuits (IPFA’04), jointlyorganized by the IEEE ED Taipei Chap-ter, IEEE Taipei Section, NationalChiao Tung University (NCTU) andIEEE CPMT/ED/R Singapore Chapter,and technically co-sponsored by EDS

has been progressing well. More than70 technical papers were presented,including two Keynotes speeches on“Opportunities and Challenges forHigh-k Gate Dielectrics” by Prof. T. P.Ma of Yale University, USA and“Technology and Reliability Chal-lenges: A Foundry Perspective” by Dr.Jack Sun of TSMC, Taiwan. As per theIPFA tradition, four tutorial sessionsand an equipment exhibition wereheld in conjunction with IPFA’04.

The General Chair, Dr. AlastairTrigg of the Institute of Microelectron-ics, Singapore, has formed the orga-nizing committee of IPFA’05. It will beheld in Singapore in July 2005 and thefirst call for papers was announced atthe IPFA’04 in Taiwan.

The Chapter has donated S$1,200 toTemasek Polytechnic for a BronzeCourse Medal Award in 2004 and 2005.

~ Xing Zhou, Editor

ED Kansai- by Hiroyuki SakaiThe ED Kansai Chapter held a Distin-guished Lecturer Meeting at KyotoUniversity, Kyoto, Japan, on May 12,2004. Dr. Hidemi Takasu, Director,

Distinguished lecturers and invited speakers presented in the meetings organized by the ED Japan Chapter. From the upper left to the lower right; Prof. H. Iwai,Dr. Y. Takahashi, Dr. K. Maeguchi, Dr. K. Okuwada, Prof. K. Itoh, Dr. E. Godshalk, Prof. R. Dutton, Prof. D. Donoval and Prof. E. Seebaue.

eds1004.qxd 8/13/04 9:56 AM


Member of the Board, R&D Head-quarters, Rohm Co., Ltd. was invitedas a Distinguished Lecturer. Dr. Taka-su is well known for his prominentcontributions to the semiconductordevices field both in technical and inindustrial aspects. The title of his talkwas “Technology trends of FeRAMapplication to CMOS logics”. Startingfrom a brief review of superiority ofFeRAM to other memory technolo-gies, he introduced the cutting edgetechnologies of FeRAM applications;not only as replacement of SRAM butalso as novel logics using ferroelec-tric materials. His talk was not limitedto technical fields but extended to theindustrial structure. He concluded byexpressing his strong expectations toyoung researchers. Prof. Nozawa,Kyoto University, hosted the meetingand the number of participants was20 including students and researchersfrom industries. We truly appreciateDr. Takasu’s dedicated effort.

ED Japan-by Hiroshi IshiwaraThe ED Japan Chapter held Distin-guished Lecturer Meetings on 22 April,28 May, and 4 June 2004, at the TokyoInstitute of Technology, Yokohama.Three prestigious lecturers from EDSgave presentations on: “Technologyand Architecture Challenges ofSub90nm” by Prof. Robert W. Dutton(Stanford Univ.) on 22nd April, “NewMechanisms Governing Diffusion inSilicon for Transistor Manufacture” byProf. Edmund G. Seebaue (Univ. of Illi-nois) on 28th May, and “Microelec-tronic Department, Slovak Universityof Technology in Bratislava” by Prof.Daniel Donoval (Slovak Univ. of Tech-nol., Slovakia) on 4th June. On thesame day of the first lecture, the tech-nical meeting was also held in whichDr. Ernest L. Godshalk (President andCOO of Varian Semiconductor Equip-

ment Associates) presented a talk enti-tled “Semiconductor EquipmentIndustry’s Response to Market Trendsand Challenges”. The workshop enti-tled “New collaborations betweenindustries and universities on semi-conductor technology” was held on26th March at Tokyo Institute of Tech-nology, Yokohama, cosponsored bythe EDS Japan Chapter, Silicon Tech-nology Subcommittee of the JapaneseSociety of Applied Physics, Subcom-mittee of the Institute of ElectricalEngineering of Japan, and Researchand Development Association ofFuture Electron Devices. Prof. HiroshiIwai (Tokyo Inst. of Technol.), Dr.Yasuo Takahashi (NTT), Prof. KoheiItoh (Keio Univ.), Prof. ToshiroHiramoto (Univ. Tokyo), Dr. KumiOkuwada (Ministry of Education, Cul-ture, Sports, Science and Technology),and Dr. Kenji Meguchi (Toshiba Corp.)presented topics related to the work-shop theme, and we enjoyed veryactive discussions.

~ Hisayo S. Momose, Editor

ED Shanghai- by Guo-Ping RuThe ED Shanghai Chapter was involvedin organizing an international workshopnamed the 4th International Workshopon Junction Technology (IWJT-2004)during March 15-16, 2004. IWJT is anannual event and the first three work-shops were held in Japan. IWJT-2004was sponsored by the Chinese Instituteof Electronics and Japan Society ofApplied Physics (Silicon TechnologyDivision), and technically co-sponsoredby the IEEE Electron Devices Society,the IEEE EDS Shanghai Chapter, incooperation with the InternationalSEMATECH & SEMI and Electrochemi-cal Society, supported by the NaturalScience Foundation of China, Scienceand Technology Commission of Shang-hai Municipality, School of Microelec-

tronics at Fudan University, AxcelisTechnologies Inc., and the State KeyLaboratory of Functional Materials forInformatics at the Shanghai Institute ofMicrosystem and Information Technol-ogy of Chinese Academy of Sciences.

IWJT-2004 consisted of a plenarysession, six parallel sessions, and oneposter session. A total of 85 papers,including 63 oral and 22 poster papers,were accepted for presentation. Over140 participants from 10 countries orregions attended the workshop. Dr. S.Deleonibus from CEA-LETI delivered aplenary talk entitled “The nanoelectron-ic CMOS era: silicon meets the othermaterials on the roadmap”. Dr. H. M.Wu from Semiconductor Manufactur-ing International Corporation (SMIC)gave a plenary talk on “Technologyrequirement for leading edge foundryoperation in Mainland China”. Mr. J. O.Borland from JOB Technologies pre-sented a plenary talk on “USJ forma-tion & characterization for 65nm nodeand beyond”, and Prof. Y. Nanishi fromRitsumeikan University gave a plenarytalk titled “Recent development ofnitride semiconductor electronicdevices for next generation wirelesscommunications”. In addition, promi-nent scientists presented 12 invitedtalks from Belgium, China, Japan, Sin-gapore and the USA in the parallel ses-sions. After the two-day technicalprogram, a tour of the Grace Semicon-ductor Manufacturing Corporation(GSMC) at Zhangjiang Hi-tech Park inShanghai Pudong Area was arranged.

IWJT-2004 provided a very goodopportunity for Chinese scientists andengineers involved with junction technol-ogy to have a close touch with theworld’s pioneering scientists. Mean-while, it gave an opportunity for over-seas researchers to have a vivid view ofthe rapid progress of microelectronicsresearch and industry in Mainland China.

~ Hei Wong, Editor

Dr. Hidemi Takasu giving a Distinguished Lectureon May12, 2004 at Kyoto University, Kyoto, Japan

Part of the IWJT-2004 committee members and plenary speakers.

eds1004.qxd 8/13/04 9:56 AM

October 1 - 6, 2004, T International Schoolon Chaotic Oscillations and Pattern Forma-tion, Location: Volzhskie Dali Hotel, Saratov, Rus-sia, Contact: Dmitry Trubestskov, Saratov StateUniversity, E-Mail: [email protected],Deadline: 6/20/04, www: http://www.nonlin-mod.sgu.ru/chaos04.htm

October 3 - 6, 2004, T IEEE Custom IntegratedCircuits Conference, Location: Caribe RoyaleResort Suites, Orlando, FL, USA, Contact: MelissaWiderkehr, Widerkehr & Associates, E-Mail: [email protected], Deadline: 4/5/04, www:http://www.ieee-cicc.org

October 3 - 6, 2004, T IEEE Conference onIntelligent Transportation Systems, Location:Loews L’Enfant Plaza Hotel, Washington, DC, USA,Contact: Paul Kostek, E-Mail: [email protected],Deadline: 5/1/04, www: http://www.itsc2004.org/

October 4 - 7, 2004, * IEEE International SOIConference, Location: Francis Marion Hotel,Charleston, SC, USA, Contact: Bobbi Armbruster,BACM, E-Mail: [email protected], Deadline:8/13/04, www: http://www.soiconference.org

October 4 - 8, 2004, T European Symposiumon Reliability of Electron Devices, FailurePhysics and Analysis, Location: Swiss FederalInstitute of Technology Main Bldg, Zurich, Switzer-land, Contact: Mauro Ciappa, Swiss Federal Insti-tute of Technology (ETH), E-Mail:[email protected], Deadline: 3/26/04, www:http://www.iis.ee.ethz.ch/esref/index.html

October 4 - 6, 2004, * International Semicon-ductor Conference, Location: Sinaia Hotel, Sina-ia, Prahova, Romania, Contact: Dan Dascalu,IMT-Bucharest, E-Mail: [email protected], Deadline:5/19/04, www: http://www.imt.ro/CAS

October 11 - 14, 2004, T IEEE International Sem-inar/Workshop on Direct and Inverse Prob-lems of Electromagnetic and Acoustic WaveTheory, Location: Tbilisi State University, Republic ofGeorgia, Ukraine, Contact: Mykhalyo Andriychuk,Inst. of Applied Problems of Mech. & Math. Of NASU,E-Mail: [email protected], Deadline: 7/1/04www: http://www.ewh.ieee.org/soc/cpmt/ukraine/

October 11 - 12, 2004, T European GalliumArsenide and Other Semiconductor Appli-

cations Symposium, Location: Amsterdam RAI,Amsterdam, The Netherlands, Contact: Frank Vanden Bogaart, E-Mail: [email protected], Dead-line: 3/1/04, www: http://www.eumw2004.com/gaas2004.html

October 11 - 13, 2004, T IEEE InternationalConference on Computer Design, Location:Doubletree Hotel, San Jose, CA, USA, Contact:Thomas Dillinger, Sun Microsystems Inc., E-Mail:[email protected], Deadline: 5/14/04, www:http://www.iccd-conference.org

October 17 - 21, 2004, T International Con-ference on Advanced SemiconductorDevices and Microsystems, Location:Smolenice Castle, Smolenice, Slovak Republic,Contact: Stefan Hascik, Institute of Electrical Engi-neering, Slovak Academy of Sciences, E-Mail:[email protected], Deadline: 4/15/04, www:http://www.elu.sav.sk/asdam

October 18 - 21, 2004, * IEEE InternationalIntegrated Reliability Workshop, Location:Stanford Sierra Camp, Lake Tahoe, CA, USA, Con-tact: Roy and Becky Walker, E-Mail:[email protected], Deadline: 6/18/04, www:http://www.irps.org/irw

October 18 - 21, 2004, T International Con-ference on Solid-State & Integrated CircuitsTechnology, Location: Beijing International Con-ference Center, Beijing, China, Contact: MengqiZhou, Chinese Institute of Electronics, E-Mail:[email protected], Deadline: 5/31/04,www: http://dme.pku.edu.cn/icsict

October 24 - 27, 2004, T International Work-shop on Computational Electronics, Location:Purdue University, West Lafayette, IN, USA, Con-tact: Jane Boone, NSF Network for ComputationalNanotechnology, Purdue University, E-Mail:[email protected], Deadline: 6/14/04, www:http://www.iwce.nanohub.org

October 24 - 27, 2004, T IEEE InternationalConference on Sensors, Location: The ViennaUniversity of Technology, Vienna, Austria, Contact:M Vellekoop, Vienna University of Technology, E-Mail: vellekoop@ iemw.tuwien.ac.at, Deadline:4/16/04, www: http://www.ewh.ieee.org/tc/sen-sors/sensors2004/index.html

October 24 - 27, 2004, * IEEE CompoundSemiconductor IC Symposium, Location: Dou-ble Tree Monterey, Monterey, CA, USA, Contact:Brad Nelson, Sirenza Microdevices, E-Mail: [email protected], Deadline: 7/28/04, www:http://www.csics.org

October 24 - 24, 2004, T Reliability Workshopon Compound Semiconductors, Location: Dou-bletree Hotel, Monerey, CA, USA, Contact: AnthonyImmorlica, BAE Systems, E-Mail: [email protected], Deadline: 8/16/04, www:http://www.jedec.org/home/gaas/default.cfm

October 26 - 29, 2004, T International Micro-processes and Nanotechnology Confer-ence, Location: Hotel Hankyu Expo Park, Osaka,Japan, Contact: Hiroaki Masuko, Business Centerfor Academic Societies Japan, E-Mail:[email protected], Deadline: 7/9/04, www:http://www.nano.ee.es.osaka-u.ac.jp/mnc

November 3 - 3, 2004, T IEEE Electron DevicesActivities in Western New York Confer-ence, Location: Xerox Auditorium, James E. Glea-son Building, Rochester, NY, USA, Contact: KarlHirschman, RIT Microelectronic Engineering, E-Mail: [email protected], Deadline: 10/22/04,www: http://www.microe.rit.edu/eds.html

November 3 - 5, 2004, T International CaracasConference on Devices, Circuits and Sys-tems, Location: Barcelo Bavaro Convention Center,Punta Cana, Dominican Republic, Contact: AdelmoOrtiz-Conde, Dpto de Electronica, Simon BolivarUniversity, E-Mail: [email protected], Deadline:5/17/04, www: http://pancho.labc.usb.ve/iccd-cs2004

November 7 - 11, 2004, T IEEE InternationalConference on Computer Aided Design,Location: Doubletree Hotel, San Jose, CA, USA,Contact: Kathy MacLennan, MP Associates, Inc., E-Mail: [email protected], Deadline: 4/21/04, www:www.iccad.com

November 8 - 9, 2004, T International Sym-posium on Electron Devices for Microwaveand Optoelectronic Applications, Location:Kruger National Park, Pretoria, South Africa, Con-tact: Thereza Botha, Techno Conferences, E-Mail:[email protected], Deadline: 9/10/04,www: http://www.edmo-symposium.org


EDS Meetings Calendar(As of 5 August 2004)

EDS Meetings Calendar(As of 5 August 2004)

The complete EDS Calendar can be found at our web site:http://www.ieee.org/organizations/society/eds/meetings_calendar.xml Please visit!

eds1004.qxd 8/13/04 9:56 AM

advantage of member benefits andservices; only print subscriptions toIEEE publications could be providedwith membership.

Certain aspects of editing of papersand manuscripts submitted to IEEE pub-lications also were affected by these reg-ulations. So, in December 2002, IEEEsent a request for OFAC to exempt itsentire publishing process. After manymonths of discussions and providingadditional information to OFAC, on 30September 2003, OFAC confirmed thatIEEE could publish articles from authorsin Iran and that the IEEE peer reviewprocess was entirely exempt from theIranian embargo rules. But OFAC alsosaid IEEE needed a license forediting. On 6 October 2003, IEEE provid-ed supplemental information to OFAC,reiterating our position that the entirepublishing process for authors in all

embargoed countries should be exempt.At the same time, IEEE also requestedthat OFAC issue a license to enable us tocarry on our normal publication processif an exemption was not possible. Afterthe ruling, IEEE continued to receivepapers, send them to editors andreviewers for peer review and publishthose that met its publication standardswithout style and copy editing.

While awaiting the decision about theOctober request, IEEE took a leading roleto help other scholarly publishers under-stand its experience with OFAC regula-tions by organizing a special summit ofscientific, technical and medical publish-ing organizations, which was held on 9February 2004 in Washington, D.C. Atthat meeting, David Mills, OFAC chief oflicensing, encouraged the groups repre-sented to work together to help OFACbetter understand the academic peer

review process.After the meeting, IEEE continued

discussions with OFAC. On 2 April, IEEEreceived the ruling mentioned at thenote at the top of this document thatexempted our entire scholarly publish-ing process from OFAC restrictions.IEEE has been the subject of a numberof news stories worldwide duringrecent months about this issue. Sincemany of these stories contain inaccu-rate information, IEEE has been com-municating the facts on the IEEE OFACweb page at http:// www.ieee.org/ofac.

Please continue to monitor thisWeb page for updates to all aspects ofthis situation.

Celia DesmondIEEE Transnational Committee Chair

World Class-TelecommunicationsMissisauga, Ontario, Canada


OFAC – Where Are We Today?OFAC – Where Are We Today? continued from page 19

November 15 - 17, 2004, T Non-VolatileMemory Technology Symposium, Location:Crowne Plaza Universal Hotel, Orlando, FL, USA,Contact: Nazeeh Aranki, E-Mail: [email protected], Deadline: 6/15/04, www:http://nvm.jpl.nasa.gov/

December 6 - 8, 2004, T International Confer-ence on Field-Programmable Technology,Location: University of Queensland, Brisbane, Aus-tralia, Contact: Neil Bergmann, School of ITEE,University of Queensland, Brisbane, E-Mail:[email protected], Deadline: 6/7/04,www: http://www.itee.uq.edu.au/~icfpt04/

December 6 - 8, 2004, T International Confer-ence on Microelectronics, Location: Le PalaceHotel, Carthage, Tunis, Tunisia, Contact: BrahimMezghani, IPEIS BP 805, E-Mail:[email protected], Deadline:8/10/04, www: http://www.gmslab.org/confer-ences/icm2004

December 7 - 9, 2004, T IEEE InternationalConference on Semiconductor Electronics,Location: Mines Beach Resort & Spa, Kuala Lumpur,Malaysia, Contact: Burhanuddin Majlis, Institute ofMicroengineering and Nanoelectronics (IMEN), E-Mail: [email protected], Deadline: 8/1/04,www: http://www.eng.ukm.my/~eds/icse

December 8 - 10, 2004, T Conference onOptoelectronic and Microelectronic Materi-als & Devices, Location: The University ofQueensland, Brisbane, Australia, Contact: Alek-sander Rakic, The University of Queensland, E-Mail: [email protected], Deadline: 7/25/04,www: http://www.commad2004.itee.uq.edu.au

December 9 - 11, 2004, * IEEE SemiconductorInterface Specialists Conference, Location:Catamaran Hotel Resort, San Diego, CA, USA,Contact: Glen Wilk, ASM America, E-Mail:[email protected], Deadline: 7/15/04, www:http://www.ieeesisc.com

December 9 - 11, 2004, T International Con-ference on Fibre Optics and Photonics, Loca-tion: Hotel Le Meridien, Cochin, India, Contact: PRadhakrishnan, International School of Photonics,Cochin University of Science & Technology, E-Mail:[email protected], Deadline: 8/15/04, www:http://www.photonics.cusat.edu/ph_2004/pho-tonics2004.htm

December 13 - 15, 2004, * IEEE InternationalElectron Devices Meeting, Location: San Fran-cisco Hilton & Towers Hotel, San Francisco, CA,USA, Contact: Phyllis Mahoney, Widerkehr & Asso-ciates, E-Mail: [email protected], Deadline:6/24/04, www: http://www.ieee.org/confer-ence/iedm

January 3 - 7, 2005, * IEEE Photovoltaic Spe-cialists Conference, Location: Disney’s Corona-do Springs Resort, Lake Buena Vista, FL, USA,Contact: Americo Forestieri, E-Mail: [email protected], Deadline: 7/9/04, www:http://www.ieee.org/pvsc

January 3 - 7, 2005, T International Confer-ence on VLSI Design, Location: Taj Bengal,Kolkata (Calcutta), India, Contact: Partha Das,Interra Systems (I) Pvt. Ltd., E-Mail: [email protected], Deadline: 7/10/04, www:http://www.isical.ac.in/~vlsi2005

February 2 - 5, 2005, T Spanish Conferenceon Electron Devices, Location: Hotel ImperialTorraco, Tarragona, Spain, Contact: Josep Pal-lares, University Rovira I Virgili, E-Mail:[email protected], Deadline: 10/1/04, www:http://cde05.etse.urv.es

February 6 - 10, 2005, T IEEE InternationalSolid-State Circuits Conference, Location:San Francisco Marriott Hotel, San Francisco, CA,USA, Contact: Anne O’Neill, IEEE Solid-State Cir-cuits Society, E-Mail: [email protected], Deadline:9/20/04, www: http://www.isscc.org/isscc/

* = Sponsorship or Co-Sponsorship Support @ = Alternates support between ’Sponsorship/Co-Sponsorship’ and ’Technical Co-Sponsorship’T = Technical Co-Sponsorship Support

eds1004.qxd 8/13/04 9:56 AM


An IEEE EDS Europe, Africa and MiddleEast (EAM) Mini-colloquium was heldin Madrid, Spain on 21 May in conjunc-tion with the EAM (Region 8) ChaptersMeeting and the EDS Ad-Com Meetingon 22 and 23 May, respectively. Thespeakers were composed of elevenEDS Distinguished Lecturers. After thewelcoming address by Marcel Profires-cu, EDS SRC EAM Vice-Chair, ProfessorGady Golan from the Open Universityin Tel Aviv, Israel, presented the firstlecture entitled ‘Investigation of Metal-Silicon Interfaces Influenced by Vacu-um Photothermal Processing (VPP)‘.Two presentations on deep submicrondevice simulation followed given byProfessor Marcel Profirescu of Techni-cal University of Bucharest, Romania,on ‘Simulation on the NanometerScale’ and Professor Enrico Sangiorgiof the University of Bologna, Forli, Italy,on ‘Advanced Simulation ofDecananometer MOSFETS’. The lastlecture before lunch on ‘MICROS: AnExperimental Coin-Sized, Low Cost,Low Power CMOS ZigBee-Like Radio at2.4 GHz as an Unbiquitous NetworkNode’ was presented by ProfessorKwyro Lee from Korea Advanced Insti-tute of Science and Technology, Tae-jon, Korea.

The afternoon session comprisedfour talks given by Professor RenukaJindal from the University ofLouisiana at Lafayette, USA, on‘Nano-FET Fluctuation Physics’, Pro-fessor Cor Claeys of KUL / IMEC inLeuven, Belgium on ‘TechnologicalChallenges of Advanced CMOS Pro-cessing and Their Impact on DesignAspects’, Professor Monuko du Plessisfrom the University of Pretoria, South

Africa, about ‘Silicon Light EmittingDevices in Standard CMOS / BiCMOSTechnology’ and Professor AlexanderGridchin of Novosibirsk State Techni-cal University, Russia, on ‘Physicalfundamentals for designing the pres-sure and pressure-temperature sensorbased on shear piezoresistive effect’.

Within the last session after thecoffee break Professor Paul Yu fromthe University of California at SanDiego, USA, presented a lecture on‘Advances in Analog Fiber Links’, thenProfessor Mikael Ostling of KTH, Roy-al Institute of Technology in Kista,Sweden, gave a talk on ‘Silicon Car-bide Device Technology – The State ofthe Art’, and Professor Mark Law fromthe University of Florida inGainesville, USA, presented the last

lecture entitled ‘Moore’s Law – Chal-lenges for Materials and Processes’.

The level of the lecturers was highand they were lively and well present-ed. There were 28 attendees frommost Region 8 Chapters who showeddeep interest in all presentations, withquestions and comments extendedover the breaks.

In summary, the Madrid EAM Mini-colloquium was successful and wellorganized and once again it provedthe efficiency of such events wherethe audience has the chance to listento many DLs in one place.

Marcel D. ProfirescuRegion 8 SRC EAM Vice-Chair

Technical University of BucharestBucharest, Romania

Report on the IEEE EDS EAM Mini-Colloquium

- Madrid, Spain

Report on the IEEE EDS EAM Mini-Colloquium

- Madrid, Spain

The lecturers and attendees of the IEEE EDS EAM Mini-Colloquium

eds1004.qxd 8/13/04 9:56 AM

ELECTRON DEVICES SOCIETY IEEE ELECTRON DEVICES SOCIETY IIEEE ELECTRON DEVICES SOCIETY ... ·...

Documents

Transcript of ELECTRON DEVICES SOCIETY IEEE ELECTRON DEVICES SOCIETY IIEEE ELECTRON DEVICES SOCIETY ... ·...