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IEEE ELECTRON DEVICES SOCIETY IEEE ELECTRON DEVICES SOCIETY IEEE ELECTRON DEVICES SOCIETY EEDDSS

LECTRONEVICESOCIETY

Oct. 2003 Vol. 10, No. 4 ISSN:1074 1879 Editor-in-Chief: Ninoslav D. Stojadinovic

Your Comments SolicitedYour comments are most welcome. Please writedirectly to the Editor-in-Chief of the Newsletter at

the address given on the back cover page.

The 49th annual IEEE International Electron Devices Meeting (IEDM)will be held 8-10 December, 2003 at the Hilton Washington and Towers,preceded by a full day of Short Courses on Sunday, 7 Dec. IEDM, theElectron Devices Society’s annual technical meeting, is the world’s pre-mier conference for the presentation of advances in nano- and microelec-tronics-related devices and processes.

IEDM draws presentations and attendees from industry, academia,and governmental agencies worldwide. No other meeting presents asmuch leading work in so many different areas of microelectronics,encompassing both silicon and non-silicon device and process technolo-gy, optoelectronics; molecular electronics; and MEMS (MicroElectro-Mechanical System) technology.

Short CoursesThis year’s Short Courses are “Silicon+: Augmented CMOS Technology,”organized by Tsu-Jae King at University of California, Berkeley; and“Interconnect Scaling: Materials and Systems,” organized by KarenMaex of IMEC, Belgium.

The courses provide attendees with the opportunity to learn aboutemerging new areas and important developments, and to benefit fromdirect contact with lecturers who are experts in the field. They alsoinclude introductory material for general audiences. Advance registrationis required.

Technical ProgramThe areas to be covered in this year’s technical program are:

• CMOS Devices• CMOS and Interconnect Reliability• Displays, Sensors and MEMs• Integrated Circuits and Manufacturing

Table of ContentsUpcoming Technical Meetings ................1

• 2003 IEDM • 2003 GaAs IC• 2003 IRW • 2003 SISC

Spring 2003 EDS AdCom MeetingSummary ...........................................................2IEEE Transactions on Device & MaterialsReliability Call for Papers (T-DMR) ...........9Society News.................................................10• EDS Members Named Winners of 2003

IEEE Medals• Congratulations to the EDS Members

Recently Elected to IEEE Senior MemberGrade!

• Your Help is Needed - Request for yourAssistance in Obtaining Past Proceedingsof the International Electron DevicesMeeting (IEDM)

• IEEE Election – Did You Vote Yet?• On-Line Access to IEEE Journals Available

to EDS Members• Important - New Requirements for

Submission of Conference Proceedings to IEEE

• EDS Distinguished Lecturers/ChapterPartners Visit Illinois Institute ofTechnology and the Chicago Chapter

• Annual CD-ROM Packages Available toEDS Members

• EDS Distinguished Lecturer Program –Lecturers Residing in Central, Western &South Western USA and Latin America(Regions 4,5,6 & 9)

• EDS Membership Fee Subsidy Program(MFSP)

• In Memory of Kevin F. Brennan

Regional & Chapter News ........................17

EDS Meetings Calendar ............................23

continued on page 4

2003 IEEE InternationalElectron Devices Meeting

(IEDM)

2003 IEEE InternationalElectron Devices Meeting

(IEDM)

President, Steve Hillenius, called the2003 Spring meeting of the IEEE ElectronDevices Society to order on Sunday,June 1, 2003 at the IEEE Operations Cen-ter in Piscataway, NJ.

Executive ReportsThe President’s report reviewed the EDSStrategic Plan Position statements, whichfall broadly into two principal areas:

Broadening the base of technical interests, and ensuring thatEDS activities reflect current and future global trends. Withinthe first area, the main task is to restructure the EDS TechnicalCommittees (TC), adding a position on both AdCom andExCom for a TC Chair. For the second, EDS plans to promoteand develop activities in underdeveloped regions, increasethe profile of silicon manufacturing issues, and look at overlapor consolidation within IEEE with an eye to their affect onEDS. Membership development is also on the agenda as EDSlooks at a long-term strategy for membership especially with-in Southeast Asia. Steve also announced that the 2004Spring EDS AdCom series would be held in Madrid, Spain onMay 22-23. Turning to financial matters, Treasurer, Paul Yu,projected a net loss for 2003 of $119.6K due mostly to IEEE’sassessments to EDS. The 2002 assessment was $1,940K(US), which was comprised of a $1,047K fee for infrastructurecosts and a charge of $893K to help IEEE cover its investmentlosses. For 2003, the infrastructure charge should be around$1,032K, while there may still be an additional charge tohelp cover investment losses (if any). While sobering, it is alower net loss than that of 2002. The good news is that

2 IEEE Electron Devices Society Newsletter ❍ October 2003

President

Steven J. HilleniusAgere SystemsTel: +1 610 712 6054E-Mail: [email protected]

Vice President

Hiroshi IwaiTokyo Institute of TechnologyTel: +81 45 924 5471E-Mail: [email protected]

Treasurer

Paul K. L. YuUniversity of California at San DiegoTel: +1 858 534 6180E-Mail: [email protected]

Secretary

John K. LowellConsultantTel: +1 972 839 4900E-Mail: [email protected]

Sr. Past President

Bruce F. GriffingN/ATel: N/AE-Mail: [email protected]

Jr. Past President

Cary Y. YangSanta Clara UniversityTel: +1 408 554 6814E-Mail: [email protected]

EDS Executive Director

William F. Van Der VortIEEE Operations Center445 Hoes LanePiscataway, NJ 08854Tel: +1 732 562 3926Fax: +1 732 235 1626E-Mail: [email protected]

Awards Chair

Alfred U. Mac RaeMac Rae TechnologiesTel: +1 908 464 6769E-Mail: [email protected]

Educational Activities Chair

Ilesanmi AdesidaUniversity of IllinoisTel: +1 217 244 6379E-Mail: [email protected]

Meetings Chair

Kenneth F. GallowayVanderbilt UniversityTel: +1 615 322 0720E-Mail: [email protected]

Membership Chair

James B. KuoNational Taiwan UniversityTel: +886 2 236352251 Ext. 338E-Mail: [email protected]

Publications Chair

Renuka P. JindalUniversity of Louisiana at LafayetteTel: +1 337 482 6570E-Mail: [email protected]

Regions/Chapters Chair

Cor L. ClaeysIMECTel: +32 16 281328E-Mail: [email protected]

IEEE Newsletters

Paul DotoIEEE Operations Center445 Hoes LanePiscataway, NJ 08854Tel: +1 732 562 3945Fax: +1 732 981 1855E-Mail: [email protected]

IEEE Electron Devices Society Newsletter (ISSN 1074 1879) is published quarterly by the Electron Devices Society of the Institute of Electrical and ElectronicsEngineers, Inc. Headquarters: 3 Park Avenue, 17th Floor, New York, NY 10016-5997. Printed in the U.S.A. One dollar ($1.00) per member per year is included inthe Society fee for each member of the Electron Devices Society. Periodicals postage paid at New York, NY and at additional mailing offices. Postmaster: Sendaddress changes to IEEE Electron Devices Society Newsletter, IEEE, 445 Hoes Lane, P.O. Box 1331, Piscataway, NJ 08855-1331.

Copyright © 2003 by IEEE: Information contained in this Newsletter may be copied without permission provided that copies are not used or distributed fordirect commercial advantage, and the title of the publication and its date appear on each photocopy.

EDS ADCOM ELECTED MEMBERS-AT-LARGE

Term Expires:

2003 2004 *2005

I. Adesida (2) M. Estrada del Cueto (1) C.L. Claeys (2)T. Hiramoto (1) K. F. Galloway (2) J.A. Dayton, Jr. (2)L. Lunardi (1) S. J. Hillenius (2) M. Fukuma (2)A. A. Santos (2) C. Jagadish (2) F.J. Garcia-Sanchez (1)S. C. Sun (2) J. K. O. Sin (1) K. Lee (2)H. S. P. Wong (1) R. Singh (2) J.J. Liou (1)P. K. L. Yu (2) N.D. Stojadinovic (1) M. Ostling (2)

D.L. Pulfrey (2)

Number in parenthesis represents term.* Members elected 12/02

continued on page 7

Electron Devices SocietyElectron Devices Society

Contributions WelcomeContributions WelcomeReaders are encouraged to submit news itemsconcerning the Society and its members. Pleasesend your ideas/articles directly to either the Edi-tor-in-Chief or appropriate Editor. All contactinformation is listed on the back cover page.Whenever possible, e-mail is the preferred formof submission.

Newsletter DeadlinesIssue Due Date

January October 1stApril January 1stJuly April 1stOctober July 1st

Spring 2003 EDSAdCom Meeting

Summary

Spring 2003 EDSAdCom Meeting

Summary

John K. Lowell

October 2003 ❍ IEEE Electron Devices Society Newsletter 3

The 2003 IEEE IntegratedReliability Workshop (IRW),sponsored by the IEEE Reliabili-ty Society and the IEEE ElectronDevices Society, will be held atthe Stanford Sierra Camp onthe shore of Fallen Leaf Lakenear South Lake Tahoe, CAfrom October 20th to 23rd,2003. This workshop provides aunique forum for open andfrank discussions of all areas ofreliability research and technol-ogy for present and futuresemiconductor applications.

This year's workshop will feature akeynote address by Alain Diebold,Senior Fellow of International Semat-ech. He will be talking onmetrology/physical characterizationchallenges for advanced semiconduc-tor technology.

The technical portion of the 2003workshop is being organized by AlvinStrong of IBM and will focus on sev-eral main areas:

• Wafer Level Reliability Tests andTest Approaches

• Reliability Characterization andPrediction Models

• Novel Reliability Test Structures• Customer Product Reliability

Requirements / Manufacturer Reli-ability Tasks

• Designing-in-Reliability (Circuits,Processes, Products)Hot topics include Cu intercon-

nects; reliability of deep sub-micron;high speed, high frequency devices;new dielectric systems; and reliabilitymodeling and simulation.

The IRW is quite a bit differentfrom a typical technical conference.From the moment you arrive, afterwinding slowly back to the southshore of Fallen Leaf Lake, you realizethat you are taking part in somethingspecial. Attendees stay in cabins with-out TVs or phones, dress is casual(suits, ties and high heels areshunned), affiliations are down-played, and meals are taken at thelodge dining room, family-style.

Attendees of the workshop areexpected to participate actively. Mostattendees will find themselves drawninto technical discussions from thestart. Every aspect of this conference,from the isolated location to the for-mat of the technical program, isdesigned to get attendees to interact.

Located just a short scenic drive(less than two hours) from Reno, theStanford Sierra Camp is situated at6000 ft in the High Sierra on FallenLeaf Lake. Attendees stay in cabinsnestled amid the pines and cedarsalong the shoreline. All cabins havedecks and breathtaking views of thelake and surrounding peaks (don'tworry, the cabins also have warmbeds and hot showers; phone boothsare available in the lodge). Thispeaceful setting, free from the distrac-tions and annoyances of modern life,presents a terrific opportunity to getto know your colleagues, includinginternationally renowned experts.This is an opportunity not usuallyavailable at bigger, more hectic relia-bility conferences. Instead of watch-ing TV, participants spend theirevenings at poster sessions, discus-sion groups, and special interestgroups (SIGs), all with refreshmentsprovided to stimulate discussions.

One unique aspect of this workshopis the opportunity for attendees to pre-sent a poster of their own research, nomatter what state it is in. Just arrangefor space when you register or bring

last-minute results in your brief-case or backpack. There will evenbe opportunity to present a shortsummary description for yourposter. This a great way to sharethat new project you are workingon and to get world-class feed-back. The poster presentations areeven eligible for a two-page writeup in the conference proceedings.The open poster sessions, orga-nized by Bill Tonti of IBM, are butone example of the opportunitiesfor interaction that sets the IRWapart from other conferences.

Another distinction of the IRW isthe moderated Discussion Groupsthat are held in the evenings. Orga-nized this year by Sylvie Bruyere ofST Microelectronics, typical Discus-sion Groups are likely to include top-ics such as Single Event Upsets(SEU), WLR Monitoring, ProductQualification / Burn In, Gate OxideIntegrity, Electro migration, andDesigning for Reliability. Lively con-versation and debate among partici-pants is promised and writtensummaries will be included in theworkshop proceedings.

For those with the stamina, the Dis-cussion Groups are followed by theSpecial Interest Group meetingsor SIGs (as attendees refer to them).The SIGs are composed of smallgroups of researchers and engineerswho often continue their conversa-tions and collaborations even afterthey leave the workshop. Attendeeshave the opportunity to become partof an existing SIG or suggest a newtopic and start one of their own. Bewarned, remnants of the SIG discus-sions sometimes rage on into the weehours of the morning.

Yet another advantage of attend-ing the IRW is the TutorialProgram, presented by world-classexperts and included at no additionalcost. The tutorials review basic topicsas well as the latest developmentsand are designed to be beneficial

Upcoming Technical MeetingsUpcoming Technical Meetings

continued on page 4

2003 IEEE Integrated ReliabilityWorkshop (IRW)

2003 IEEE Integrated ReliabilityWorkshop (IRW)


both to newcomers and experiencedmembers of the reliability communi-ty. Organized this year by Amr Hag-gag of Motorola, this year's tutorialprogram will cover reliability tutorialson evolutionary and revolutionarytechnologies. Tutorials will includethe reliability physics and chemistryof thin and high-k gate oxides, fastwafer level reliability monitoring ofproduct wafers, and process monitor-ing techniques. In addition for thefirst time, tutorials on revolutionarytechnologies beyond standard siliconwill be presented.

Last, but certainly not least, atten-dees have Wednesday afternoon off toenjoy activities such as hiking (with theannual trek to the top of Mt. Tallac as afavorite goal), volleyball, canoeing, bik-ing, walking, or just conversing by thelake, all in the fresh clean mountain air.This free afternoon is a great way notonly to network, but also to build long-lasting friendships.

Additional information about theworkshop is available on the IRWwebsite at www.irps.org/irw, or bycontacting SAR Associates at 301 N.Madison Street; Rome, NY 13440,

Phone: 315-339-3968; fax: 315-336-9134. Note: If you want to take part inthis event, please register early asspace at the Stanford Sierra Camp islimited to roughly 120 attendees andthe workshop has sold out in the past.

On behalf of the 2003 IntegratedReliability Workshop Committee, welook forward to meeting you in LakeTahoe!

Michael DionCommunications Chair

Intersil Corp.Melbourne, FL, USA

• Modeling and Simulation• Processing Technology• Quantum Electronics and Com-

pound Semiconductors• Solid State DevicesAs the central core of IEDM, the

CMOS Devices sessions will coverbreakthroughs and advancements indevice physics; novel MOS devicestructures (such as vertical, multiple-gate, and 3-D integrated FETs); CMOSscaling issues; high-performance, low-power and analog/RF devices; SOI,strained silicon and SiGe devices;noise behavior of MOS structures anddevice measurement and characteriza-tion.

CMOS and Interconnect Relia-bility will cover all areas of IC anddevice reliability, at both the front- andback-end of the manufacturingprocess. Specific topics will includehot carriers; gate dielectric wear-outand breakdown; process chargingdamage; latch-up, ESD and soft errors;bias temperature instabilities; reliabili-ty of high- and low-k materials, circuitsand packaging; interconnect reliability,electromigration, and the impact ofback-end processing on devices; man-ufacturing technologies for reliability;and reliability issues for memory, SOIand BICMOS technologies.

Displays, Sensors and MEMSsessions will cover critical devices,structures and integration for imag-ing, displays, detectors, sensors, andmicroelectromechanical systems(MEMS). A subset of these key topicsincludes CMOS imagers; CCDs; TFTs;organic, amorphous and polycrys-talline devices; vacuum microelectron-ics; emissive displays; and sensors for

chemical, molecular and biologicalapplications. MEMS topics includeresonators, switches and passives forRF applications; integrated sensors;micro-optical and micro-fluidicdevices; and micro-power generators.Paper topics will encompass design,fabrication, reliability, theory andmodeling.

Integrated Circuits and Manu-facturing focuses on advances inintegrated circuits; novel memory cellconcepts; and full process integrationfor memory, logic and mixed-modeapplications. Also, process architec-tures for performance and manufac-turability of high-speed logic,advanced memories and multifunc-tion integrated circuits; and integratedpassives and low-power, low-noiseanalog, RF and mixed signal ICs. Top-ics also include IC manufacturingprocess control, failure analysis, yieldenhancements and modeling.

Modeling and Simulation ses-sions will discuss analytical, numeri-cal, and statistical approaches to themodeling of electronic and opticaldevices, their isolation and intercon-nection; physical and circuit modelsfor devices and interconnects; and themodeling of fabrication processes andequipment, including simulation algo-rithms, process characterization, andparameter extraction.

Processing Technology sessionswill cover front- and back-end processmodules for fabrication of CMOS log-ic, memory, and BICMOS devices.Front-end topics will include substratetechnologies; lithography; etching;isolation; thin dielectrics; high-k mate-rials and metal electrodes for transis-

tors and MIM capacitors; shallowjunctions; RTP; silicides; and newmaterials. Back-end topics will includeinterconnect systems; low-k materials;contact and via processes; planariza-tion, and multilevel interconnectdesign considerations.

Quantum Electronics and Com-pound Semiconductors will covercompound semiconductors (e.g.GaAs, InP, GaN, SiC and relatedalloys) with electronic and optoelec-tronic device applications, such asFETs, HBTs, high-power transistors,LEDs, lasers and external modulators.Also, devices with ballistic, quantum,and single-electron effects; spintron-ics, self-assembly, and nano- and mol-ecular-scale devices; optoelectronicICs and interconnects; and photonicbandgap structures.

Solid State Devices sessions willfocus on discrete and integrated highpower/current/voltage devices; Si andSiGe bipolar transistors; novel devicesand technology; high-speed Si devices;integrated RF components includinginductors, capacitors and switches; andsingle-electron devices in Si or SiGematerials systems. Research on othernovel device and memory structuresalso will be presented, including nan-otubes, nanowires, quantum dots, bio-electronics, and molecular devices onsilicon, along with new methods ofassessing silicon device and materialperformance.

Additional highlightsWhile the heart of IEDM is the technicalprogram, other highlights will include:

2003 IEEE Integrated Reliability Workshop (IRW)2003 IEEE Integrated Reliability Workshop (IRW)(continued from page 3)

2003 IEEE International Electron Devices Meeting (IEDM) 2003 IEEE International Electron Devices Meeting (IEDM)(continued from page 1)

continued on page 9

This year’s symposium will be heldNovember 9th to the 12th in sunnySan Diego, California at the historicU.S. Grant Hotel. Over the last 25years, the IEEE GaAs IC Symposiumhas become the preeminent interna-tional forum on developments in inte-grated circuit technologies usingGaAs, InP, SiGe, GaN, SiC and oth-er compound semiconductor devices.

The Symposium will begin on Sun-day, November 9th, with a shortcourse taught by five experts onemerging technologies from defenseto commercial. Kevin Kobayashi hasorganized the course with an emphasis inthe latest trends in advanced technologiesused in both defense and commercial. Anoverview of DARPA sponsored emergingtechnologies and their role in meetingdefense needs will kick off the shortcourse. Presentation on several of theseadvanced technologies will follow includ-ing focused instruction on RF MEMS, GaNand infrastructure applications, latestadvances in SiGe, and InP HBT technolo-gy and circuit applications.

On Sunday evening, Stephen Long andDonald Estreich will once again present theSymposium Primer Course, an excellentoverview of the basics of GaAs, InP andSiGe RFICs. The course is good as both anintroduction to those with little or no experi-ence in the compound semiconductor indus-try, and as a refresher for those with moreexperience. Among the topics covered willbe III/V materials; fabrication technology;FET and bipolar devices; and digital andanalog/RF/microwave circuits. As always,the material will be tailored to fit the contextof this year’s technical program.

The Symposium Opening Reception willbe held Sunday night in the U.S Grant Hotel.Come meet with old friends and make somenew ones as you sample light hors d’oeuvresand wine, beer or soft drinks.

On Monday morning, the TechnicalProgram, assembled by Brad Nelson andthe Technical Program Committee, willopen with our plenary session. This ses-sion features six invited papers by world-renowned experts in their fields. First, JohnZolper of DARPA will highlight the chal-lenges and future opportunities for com-pound semiconductor electronics. Next,Richard Eden of Technology Applicationswill talk about 25 years of digital III-V tech-

nology. Following that, George Bechtelwill share his thoughts on GaAs; the wire-less device technology of the future andpast, Freek Van Straten of Philips Semicon-ductor will highlight the latest in quadBand cellular power amplifiers, BrandonPillans of Raytheon will review the currentadvances in capacitive RF MEMS switchesand Phillip Smith of BAE SYSTEMS willdiscuss the progress of GaAs metamor-phic HEMT technology.

Following the Plenary Session, therewill be fifteen more sessions featuring bothcontributed and invited papers, which willrun from Monday afternoon to Wednes-day afternoon. These sessions will consistof papers that are focused on a particulartopic, such as “The Changing Face ofHigh Speed Digital Technology”, “Ampli-fiers from S to W Band Applications”, and“HBT Technology”. A separate session willalso be dedicated to late newspapers fea-turing particularly outstanding results.

In addition to the paper sessions, wealso feature five panel sessions on con-troversial topics of high interest. Thepanel moderator will set the tone of thediscussion and the five to six expert pan-elists will each spend up to five minutesstaking out a position. Following that, itwill be a free-for-all as audience mem-bers make their own points and grill thepanelists. Panel session topics are: “InPvs SiGe vs CMOS for High Speed Digi-tal Applications: Performance, Reliabili-ty, Costs and Market Conditions”; “WhyWould I Want to Switch?” “Is First PassSuccess for Complex Mixed SignalDesign Realizable?”; “Base Station PATechnology – LDMOS Forever?”; “Mod-ule to MMIC to Module – PAs Here WeGo Again”.

Another way to keep abreast of thelatest developments in the field will beby attending the GaAs IC TechnologyExhibition, which will be held onNovember 10 and 11 at the U.S. GrantHotel. The Exhibition is open to all con-ference registrants, and features a widevariety of companies who offer state-of-the-art compound semiconductor IC’s aswell as those that products and servicesto the compound semiconductor ICindustry. The exhibitors will host an Exhi-bition Opening Reception on Mondayevening, as well as an Exhibition Lun-cheon on Tuesday. Of course, conference attendees will

also have an opportunity to relax andlearn about life outside of high-speedelectronics. Tuesday evening is the Sym-posium Theme Party at the San Diego’sSea World. We will be departing fromthe hotel on luxury motor coaches. Wewill enjoy a private cocktail and horsd’oeuvre reception at the Wild Arctic.This unprecedented attraction features abreathtaking simulated helicopter flightover the frozen North. Next, we willenjoy the Base Station Wild Arctic, arealistic center for polar exploration thatfeatures above and underwater viewingof polar bears, beluga whales, walrus-es, and harbor seals. This attractioncaptures the beauty and starkness of theArctic environment. We will also enjoySea World’s Penguin Encounter themost extensive exhibit of Antarctic birdsin the world. We will dine on a wonder-ful dinner buffet at Nautilus Pavilion.Located alongside Mission Bay. Thegood food and refreshments will pro-vide an excellent atmosphere to meetwith col leagues old and new. Theevening finale will feature Shamu’sHouse of Douse Show!

On behalf of the organizing committeeand the IEEE EDS, MTT-S, and SSCS, Iinvite you to be a part of the upcoming2003 IEEE GaAs IC Symposium. Formore information, try our website athttp://www.gaasic.org. See you in SanDiego. You won’t want to miss it!

Chris Bozada, General Chairman

Air Force Research Laboratory Wright-Patterson Air Force Base,

Ohio, USA


2003 IEEE Gallium Arsenide IntegratedCircuits Symposium (GaAS IC)

2003 IEEE Gallium Arsenide IntegratedCircuits Symposium (GaAS IC)


The 2003 IEEE SemiconductorInterface Specialists Conference(SISC) will be held December 4-6,2003 at the Key Bridge Marriott inArlington, VA immediately prior tothe IEDM. The Key Bridge Marriottoverlooks the Nation’s Capital andGeorgetown from the Virginia sideof the Francis Scott Key Bridge,and is only minutes from Wash-ington, D.C. The SISC provides aunique forum for device engi-neers, solid-state physicists, andmaterials scientists to discussissues of common interest. Principaltopics for discussion at SISC are semi-conductor/insulator interfaces; thephysics of insulating thin films, andthe interaction among materials sci-ence, device physics, and state-of-the-art technology.

This year will be the thirty-fourthmeeting of SISC. The first meetingwas held in 1965 and attendance wasby invitation. The conference, nowpublic, alternates between the eastand west coasts, and meets just beforethe IEDM. An important goal of theconference is to provide an environ-ment that encourages interplaybetween scientific and technologicalissues. Invited and contributed talks,as well as a lively poster session, arepresented in an informal settingdesigned to encourage discussion,and conference participants enjoynumerous opportunities for socialgatherings with renown scientists andengineers.

The conference emphasis is on sili-con-based devices, including the SiCand SiGe systems, and topics evolvewith the state-of-the-art. The programincludes talks from all areas of MOSscience and technology, including butnot limited to the following:

• alternative and high-k gate dielec-tric materials,

• physics of thin dielectrics and theirinterfaces,

• gate-dielectric conduction andbreakdown,

• silicon carbide and its interfaces,

• physical and electrical characteriza-tion of Si/SiO2 interfaces,

• micro-roughness measurement,modeling, and device-relatedeffects,

• hot carrier, plasma damage andradiation effects,

• nitrogen-containing oxides andstacked interfaces,

• surface cleaning technology andeffects on dielectrics and interfaces,

• novel oxidation, deposition, andetching techniques, and

• theory of oxide and interfacedefects

Invited and contributed talks arecomplemented by informal eventsdesigned to encourage lively discus-sion and debate. Invited speakers thisyear include:Dr. Suvi Haukka, ASM Microchem-istry Ltd., Finland- “Novel Dielectric and Electrode

Materials by Atomic Layer Deposition”Prof. Peter E. Bloechl, ClausthalUniversity of Technology, Germany- “First-principles calculations of the

formation of the SrTiO3/Si interfaces”Dr. H.-S. Philip Wong, IBM T.J. Wat-son Research Center, USA- “Gate Dielectric Considerations for

Non-Classical FETs”Prof. Alex Grishin, KTH, Royal Insti-tute of Technology, Sweden- “Integration of novel functional

oxides with Si”Dr. Satoshi Yamasaki, AdvancedSemiconductor Research Center(AIST), Japan

- “Creation mechanism of interfacedefects at the early stage of Si oxida-tion processes studied by UHV-ESR” Jamie Schaeffer, Motorola, USA- “Dual Metal Gate Electrodes on Hi-K Gate Dielectrics”

Generous hospitality allowsattendants to focus on enjoying theconference. Hors d’oeuvres, wine,and cheese encourage interactionamong poster authors and otherconference participants at Thurs-day’s poster session. Friday after-noon has no scheduled talks, to

allow time to meet informally, relax,or visit local Washington D.C. attrac-tions. On Friday evening the confer-ence hosts a banquet and awardsceremony, complete with the now-famous (and always riotous) limerickcontest. The limericks never fail togive the conference presentations,people and events an entirely newperspective!

This year’s SISC will continue thetradition of presenting an awardmemorializing Prof. E. H. Nicollian.The award will be given for the beststudent presentation. Ed Nicollian wasa pioneer in the exploration of metaloxide semiconductor (MOS) systems.His contributions were important toestablishing SISC in its early years,and he served as the Technical Chairin 1982. With John Brews, he wrotethe definitive book MOS Physics andTechnology.

For registration information andgeneral inquir ies about SISC,please refer to the web-site:www.ieeesisc.com or contact theArrangements Chair, Eric Vogel, at theNational Institute of Standards andTechnology, 100 Bureau Dr., MS 8123,Gaithersburg, MD 20899. Phone: (301)975-4723, Fax: (301) 975-5668, E-mail:[email protected]

Eric VogelArrangements Chair

National Institute of Standards andTechnology

Gaithersburg, MD, USA

2003 IEEE Semiconductor InterfaceSpecialists Conference (SISC)

2003 IEEE Semiconductor InterfaceSpecialists Conference (SISC)

publication and conference revenueshave increased. Paul cautioned thatwhile 2003 finances are better thanthose of 2002, 2004’s figures might bedown due to the slowing global econo-my and the influence of SARS, whichtranslates into lower meeting atten-dance, and membership reduction. Asreported in December, EDS has adapt-ed policies for reducing expenses byincreasing subscription prices andmembership fees, as well as makingcost cuts in the Executive Office.

Nevertheless, Bill Van Der Vortand his staff have completed sev-eral Adhoc projects since Decem-ber 2002. Among these are thedetermination and coordination of50th Anniversary ce lebrat ions ,compilation of a list for the EDSNational Academy of Engineeringcommittee of EDS Fellows who arenot members of NAE and whowould be good potent ia l nomi-nees, working with the EDS Fin-Com (F inance Commit tee) toperform a cost-cutting exercise forthe 2002 & 2003 budgets, doingthe ground work to establish a newTC Chair position, obtaining TABapproval for the revised EDS Field-of-Interest statement, starting toarrange for the biennial Region 9chapters meeting, and providinginput to the development of anIEEE member survey to be sent toEDS members. Addit ional tasksincluded the continued coordina-tion of the scanning and digitiza-tion of the pre-1988 issues of EDL,T-ED, and the IEDM proceedings,development of a proposal to pro-duce an archival DVD of all issuesof EDL, T-ED, and the IEDM pro-ceedings (or offer them all on-lineto members), working with the EICof T-DMR to implement initiativesto increase readership and papersubmissions, coordination of theselection process for the new"George Smith" Best Paper Award,initiating preparation for IEEE TAB’sfive-year review of the Society’soverall operations as well as a sepa-rate review of EDL, T-ED, and theEDS Newsletter, and providing infor-

mation and coordinating approvalsfor two meetings requesting EDSsupport for the first t ime. Fromnow until December, the Executiveoffice will be working on complet-ing these projects.

Chair Reports To date, 2003 has been a difficult yearmembership-wise for EDS. Membershipchair, James Kuo, reported that theglobal economic slowdown (especiallyin semiconductors), SARS, the Iraq war,and related economic issues in thePacific Rim have contributed to a dropin EDS membership. As shown thegraph, membership is down in mid-2003 compared to its levels in previousyears. The percentage translates to aloss of 2,253 members. While thenumbers are not encouraging, Jamespointed out that many other IEEE soci-eties have seen far greater member-ship terminations, some as great as31% of their total members. So com-paratively, EDS is actually doing well.

Year Total Net Gain/Loss12/31/2001 13,489 +1.4%+12/31/2002 13,368 -0.9%4/30/2003 11,385 -6.0%*

EDS Membership Statistics(+Compared to Y2000: *Calculated

Percentages compared to 4/30/02 counts)

The numbers show that Regions1,6, 8 and 10, which corresponddirectly with the major areas ofsemiconductor design and produc-tion, have been hit the hardest eco-nomically, and show the highermember losses. In addition to mem-bership retention, chapter meetingshave also been affected. For exam-ple, due to the SARS scare in the FarEast, member attendance at meet-

ings and conferences has dropped,and speakers have shown reluctanceto travel to infected countries. Withthe SARS epidemic in recession, andglobal economies slowly improving,the impact of world affairs on EDSwill have an affect. It will requiresome major strategy for EDS torespond to these issues. In fact, Pres-ident Hil lenius has charged theMembership Committee to formulatea strategy on member recruitmentand retention for the next severalyears. The committee has continuedits ongoing projects such as recruit-ment using conference onsite creditvouchers, annual TIP mailing, pro-motional material to EDS sponsoredmeetings and lecturers given by DLs.In addition, they have coordinatedother activities including the SeniorMember Program (SMP), allowingannual chapter subsidies to be usedto pay for memberships and sub-scriptions, distribution of the Eng-lish, Japanese, and Mandarinversions of the EDS Membershipbrochure, and offering the Member-ship Fee Subsidy Program for low-income members. James expressedconcern over the impact of EDSbudget reductions on memberrecruitment. Contained in the Execu-tive Office cost cutting recommenda-tions is the discontinuance of suchprograms as the Japanese, and Man-darin membership brochures, theSenior Member Program, annual TIPmailing, and the sending of promo-tional materials to technically co-spon-sored meetings. EDS will also cancelusing an outside person to cover themembership booth at IEDM.

The report of Cor Claeys, Regions/Chapters Chair, referenced two new(joint) EDS chapters in Eastern NorthCarolina, and Orange County Califor-


IEDM To Be Advertised as the EDS Annual Meeting

The EDS AdCom has decided to start advertising the International ElectronDevices Meeting as its “Annual Meeting”. This change is consistent with theformat currently in use by many of our IEEE sister societies (e.g., SSC, LEO,MTT, etc.), and should provide a focal point for student attendance, activities,and professional interaction.

Spring 2003 EDS AdCom Meeting Summary(continued from page 2)

Spring 2003 EDS AdCom Meeting Summary(continued from page 2)

nia. Additional chapters in Virginia,Minneapolis, Pennsylvania, Califor-nia, Belgium, Mexico, Brazil, India,Japan, and Columbia are possible in2003. There is discussion on formingfour chapters in Mainland China aswell. At present, EDS has 107 chap-ters worldwide including eight stu-dent branches. In discussion, AdCommembers expressed concern on thecontinuation of chapter subsidies inthe light of the current budget situa-tion. It was decided that EDS wouldchange its policy for chapters spon-sored by EDS and one or more otherIEEE societies to only grant a maxi-mum annual subsidy of US $500(instead of US $1000). I lesanmi“Ade” Adesida, Education Chair, con-centrated mainly on the EDS ShortCourse, and Young Industry EngineerAward actions in his address. Atissue with the Short Course pro-gram is the selection of speakersand the relationship between EDSand companies that may wish tohost a course at their site. AdCommembers were concerned thatEDS appears to “endorse” particu-lar speakers with the current for-mat. More suitable is for EDS totake the lead in looking at hot top-ics for short courses, and thenpolling the full EDS DistinguishedLecture List for speakers willing togive talks on these hot topics. Itwould then be up to the compa-nies to select the speaker of theirchoice. In particular, short courses innanotechnology are in demand, andEDS should increase efforts in pro-viding education on this topic.AdCom will ask the NanotechnologyTC for assistance in this task. Theproposed EDS Young Industry Engi-neer Award would be aimed at recog-nizing achievements made by EDSmembers under 35 years of age, andno more than 12 years past his/herB.Sc. degree. While a committee hasbeen formed, the award proposal willbe deferred. IEEE already has a simi-lar award and it was decided to waitto see if they receive a sufficientnumber of nominations before EDSgoes forward with its proposal. Dueto budget issues, it is also good forEDS to wait to pursue this award atthis time. Ade also mentioned thatthe number of Distinguished Lec-tures, and videotape loans are down,and that there were no Region 8 can-

didates for the Graduate Student Fel-lowship this year.

On the meetings front, last yearEDS was involved with 31 spon-sored meetings, and 101 technicallyco-sponsored meetings. It was dis-cussed that conferences that havenot closed their books are a continu-ing problem, and EDS has paid over$10K in penalty fees since 1999. Thegood news is that Ken expects a sur-plus of $341K from meetings in2003. The issue was brought beforeAdCom about starting to advertisethe IEDM as the "annual meeting"for EDS. While it has always had thisrole de facto, neither EDS nor IEDMhas ever used this identification.Since similar societies such as SSC,LEO & MTT identify one of theirmeetings as their “annual meeting”,using this description for IEDM has

merit. It would also give students afocal point for attending, especiallyif special student-related activitiesand recruit ing were included.AdCom’s decision was to adopt theterm “annual meeting” for IEDM inthe future.

For the past two years now, EDShas been working on completing thedigitization of all past issues of EDL,T-ED and the IEDM Proceedings.This task was driven by the desire topossibly provide all the content forEDL, T-ED & the IEDM to memberson an archival DVD and/or online.Publications Chair, Renuka Jindal,reported that scanning and conver-sion of EDL from 1980-1987 hasbeen completed. Similar processingfor all the 1954-1987 issues of T-EDand the IEDM Proceedings from1955-1987 will be finished by theend of 2003. All pre-1988 digitiza-tion work has been budgeted, with

the final payment to be made in2004. Renuka has discovered that aproblem exists for the 1988-1996issues of EDL & T-ED current lyresiding on IEEE Xplore. Theseissues were not scanned as search-able PDFs, therefore to get all ofthese issues into a “fully search-able” format requires an extraexpenditure of $7K. AdCom felt thiswould be a worthwhile expense toincur, as we could request IEEE toreplace these issues on IEEE Xploreand improve the search capabilityfor our members. Renuka alsoadvised that i t st i l l needs to bedecided whether we would haveParity Computing create for the post1987 issues of EDL, T-ED & IEDM allthe same metadata it is currentlyestablishing for the pre-1988 issues.To do this job will cost approxi-

mately $88K. If EDS decides tocreate an archival DVD, comple-tion of this work would be essen-tial. Also, if IEEE could make useof the metadata onl ine viaXplore, it would also be good tohave this work done. ThusAdCom continued its past dis-cussion concerning whether weshould produce an archival DVDof EDL, T-ED & the IEDM. Discus-sion on this topic centered onwhether or not a DVD would bevaluable, and whether or notIEEE Xplore could make use ofthis additional information. Turn-

ing first to the latter issue, Bill VanDer Vort and Renuka were asked toinvestigate what the plans are forIEEE Xplore. A report will be due inDecember. As for the DVD, it wascommented that producing a DVD wasnot a solution since most users preferon-line access, but further discussionswill be continued in December afterfinding out what enhancements IEEEXplore will support. In short, notspending extra funds to make a DVDsaves money, and it is possible thatthe assimilation of EDL, IEDM and T-ED into IEEE Xplore will be sufficient.In another notable achievement, rev-enue for T-ED passed the $1M markfor the first time.

Cary Yang, Nominations and Elec-tions Chair, discussed the need toincrease AdCom nominations fromRegions 8 & 10. Cary also proposedbringing a suggested amendment (tothe society by-laws) to require that we


“For the first time, revenue

from Transactions on Electron

Devices has reached $1million

(US) dollars.”

-Renuka Jindal,

EDS Publications Chair

always have one elected member ofAdCom be a Graduate of the LastDecade (GOLD Member). An effort toofficially change the title of “Chair” forall EDS Standing Committees (i.e.,Meetings, Publications, Education,Membership, Awards, and Regions/Chapters) to “Vice-President” was pre-sented by Renuka Jindal. AdCom dis-cussed the conflict in this title with thecurrent EDS officer title of Vice Presi-dent. Cary and Renuka were chargedwith redoing this proposal for Decem-ber discussion with the inclusion of a

change in the election process to havea President-Elect instead of a Vice Pres-ident. For the Awards Committee,Chair Al MacRae, suggested that themonetary awards for the DistinguishedService Award be reduced from $2.5Kto $1K. A vote on this issue was post-poned until December. The George E.Smith Award for the best EDL paperhas obtained official approval, and willannounce its first recipient at the 2003IEDM. He also encouraged all mem-bers to send in nominees for the J.J.Ebers, DSC, and IEEE Field awards.

AdCom also recognized Al for hisrecent induction into the NationalAcademy of Engineering.

The next meeting of EDS AdComwill be on Sunday December 7, 2003at the Hilton Washington Towers inWashington, D.C. in conjunction withthe IEDM meeting.

John K. LowellConsultant

Dallas, TX, USA


• an Emerging Technologies ses-sion on the topic “New MemoryConcepts”

• three plenary presentations byprominent experts: “Ambient Intel-ligence--Key Technologies in theInformation Age,” by Dr. WernerWeber of Infineon; “Future ChipTechnology for Mobile Communi-cations,” by Dr. Keiji Tachikawa ofNTT DoCoMo; and “Nanotechnolo-gy Needs Today,” by Dr. JosephBordogna of the National ScienceFoundation

• two evening panel sessions onfuture challenges to the industry:“Who will solve the power prob-lem?” and “When will CMOSreplace SiGe HBT?”

• a luncheon talk by Michael Cima ofMassachusetts Institute of Technol-ogy on “Implantable Drug Delivery”

• presentation of prestigious IEEEand EDS awards.The submission date for regular

papers has already passed but a limit-ed number of late-news papers willbe accepted for presentation untilSeptember 12th, 2003. Limited finan-cial assistance is available for stu-dents presenting papers.

For registration and other informa-tion, visit the IEDM 2003 home page atwww.ieee.org/conference/iedm or con-tact Conference Manager PhyllisMahoney, 16220 S. Frederick Ave.,Gaithersburg, MD 20877, USA; tel. (301)527-0900, ext. 103; fax (301) 527-0994;

or email: [email protected], D.C. provides many

attractions for visitors and weencourage attendees to explore themin the off hours of the conference.The IEDM organizers and committeemembers look forward to seeing youin December 2003.

H-S. Philip WongPublicity Chair

IBM T.J. Watson Research CenterYorktown Heights, NY, USA

Clifford KingPublicity Vice Chair

Noble Device TechnologiesNew York, NY, USA

In an era of rapidly increasing densi-ty and integration of devices, IEEETransactions on Device and Materi-als Reliability (T-DMR) is dedicatedto providing leading informationthat is critically relevant to the cre-ation of reliable products. This fullypeer-reviewed archival publication isavailable online and via quarterlyl ibrary subscript ion. The broadscope of T-DMR includes, but is notlimited to:• The reliability of electronic, optical &

magnetic devices, MEMs devicesMicrosystems & packages

• The reliability of the materials used inthese devices, micro-systems andpackages

• Properties of the interfaces, surfaces,and microstructure that impact the

reliability of materials• Fabrication processes that modulate

materials and device reliability Original work is solicited on the mea-surement, physical analysis, and fun-damental understanding of thereliability of electronic devices andmaterials from the concept stagethrough research and development,and during manufacture. Papers to bepublished in the IEEE Transactions onDevice and Materials Reliability aresought in the following areas:• Mechanisms of failure of electronic

devices and materials• Influence of fabrication processes on

failure mechanisms• Theoretical modeling and simulation

of failure mechanisms• Reliability testing and screening

methodologies for materials anddevices

• Reliability impact of device and circuitdesign, material, and process selection

The intent of the T-DMR is to facili-tate rapid dissemination of newresearch findings. The Editorial Boardstrives to expedite publication toensure rapid dissemination of newresults. Manuscripts will appearonline shortly after acceptance forpublication. Current publication statis-tics for T-DMR indicate that firstreviews are complete in less than 2months while accepted manuscriptsare published on-line on average inless than 4 months.

Manuscript submission details andinstructions for authors can be obtainedat www.ieee.org/tdmr/emanuscript.

IEEE Transactions on Device and MaterialsReliability Call for Papers

IEEE Transactions on Device and MaterialsReliability Call for Papers

2003 IEEE International Electron Devices Meeting (IEDM) 2003 IEEE International Electron Devices Meeting (IEDM)(continued from page 4)


Two EDS members won 2003 IEEEmedals. Professor Nick Holonyak, Jr.won the IEEE Medal of Honor and Dr.Donald R. Scifres won the IEEE RobertN. Noyce Medal.

IEEE Medal of Honor“For a career ofpioneering contri-butions to semi-c o n d u c t o r s ,including thegrowth of semi-conductor alloysand heterojunc-tions, and to visi-ble light-emitting

diodes and injection lasers.”Hailed as the “father of semicon-

ductor light emitter technology in thewestern world,” Nick Holonyak, Jr. iscommonly credited with inventing thelight-emitting diode (LED) and thefirst semiconductor laser to operate inthe visible spectrum. Light sourcesbased on his work dominate the opti-cal communications and home enter-tainment industries. He is the first tomake III-V alloy devices.

The John Bardeen Chair and pro-fessor at the Center for AdvancedStudy at the University of Illinois atUrbana-Champaign, Dr. Holonyakwas Bardeen’s first graduate studentand enjoyed a 40-year friendship andcollaboration with him. Since 1963 Dr.Holonyak and his students have madeseminal contributions to semiconduc-tor lasers and LEDs, and since 1977 toquantum well lasers. Virtually allsemiconductor lasers today use quan-tum wells for fiber-optic communica-tions, compact disk and digitalvideodisk players, medical diagnosis,surgery, ophthalmology and manyother applications.

In the early 1980s, Dr. Holonyak’sgroup introduced impurity-induced lay-er disordering, which converts lowerband gap layers of a semiconductorstructure into intermixed higher bandgap alloy. The discovery of thisprocess solved the low-reliabilityissues previously plaguing lasers, and

is used also to define semiconductorwaveguides. With this technology,lasers exhibit higher performance anddurability, making them ideal for DVDplayers and other optical storageequipment. In 1990 he and his studentsintroduced the III-V oxide technologynow used universally to define VCSEL(vertical laser) currents and cavities.

Dr. Holonyak began his career atBell Telephone Laboratories in 1954.He joined General Electric’sAdvanced Semiconductor Lab in1957, where he helped developthyristors in 1957-60, invented thebasic symmetrical switch in house-hold light-dimmer switches, andmade the first visible semiconductorlaser and visible LED in 1962.

Dr. Holonyak holds 31 patents, haspublished numerous papers and co-authored two books. A Life Fellow ofthe IEEE and a Fellow of the AmericanAcademy of Arts and Sciences, theAmerican Physical Society, and theOptical Society of America, he is amember of the U.S. National Acade-my of Engineering and NationalAcademy of Sciences. His honorsinclude the IEEE Jack A. MortonAward, the IEEE Edison Medal, theU.S. National Medal of Science, theFrederic Ives Medal of the OpticalSociety of America, the NationalAcademy of Sciences Award for theIndustrial Application of Science, theJohn Scott Medal of the City ofPhiladelphia, and the Japan Prize.

IEEE Robert N. Noyce Medal

“For pioneering con-tributions to thetechnology and busi-ness development ofs e m i c o n d u c t o rlasers.”

A laser physicsbusiness and tech-nology visionary,

Donald Scifres helped launch a revo-lution in the optical communicationsindustry. His founding contributionsto distributed feedback lasers, high

power diode arrays, vertical cavitysurface emitting lasers and morehave consistently delivered sophisti-cated devices into the market.

At Xerox PARC, where he workedfrom 1972 to 1983, he and hiscoworkers patented the pioneeringdistributed feedback semiconductorinjection laser. It became the pre-ferred light source for high-speed,long distance optical fiber commu-nications.

In 1983, Dr. Scifres founded SpectraDiode Laboratories, Inc., which becamea leading supplier of fiber optic com-munications components and mod-ules. The company’s products includedhigh-power semiconductor lasers,erbium doped fiber amplifiers, lightmodulators, optical performance moni-tors, planar light wave circuits andhigh-speed electronics for poweringfiber optic communications. SDLmerged with JDS Uniphase Corpora-tion in 2001, and Scifres became co-chairman and chief strategy officeruntil his retirement in January 2003.Scifres is now chairman of SDL Ven-tures, an investment company.

Dr. Scifres holds more than 130patents and has published more than300 articles and book contributions.An active Fellow of the IEEE, he hasbeen president, board member andtechnical committee chair of the IEEELasers and Electro-Optics Society. Hehas also been a director of the OpticalSociety of America and president anddirector of the Lasers and ElectroOptics Manufacturers Association.

Dr. Scifres’ honors include theIEEE Jack A. Morton Medal, the IEEEThird Millennium Medal and the IEEELEOS Award for EngineeringAchievement. A member of the Inter-national Society for Photonics andOptical Engineering, the AmericanPhysical Society and the NationalAcademy of Engineering, and Fellowof the OSA, he has also earned theRank Prize from the Rank Foundation,the OSA’s Edwin H. Land Medal andthe American Physical Society’sGeorge E. Pake Prize.

Society NewsSociety News

EDS Members Named Winners of 2003 IEEE MedalsEDS Members Named Winners of 2003 IEEE Medals

Nick Holonyak

Donald Scifres

Position CandidatesIEEE – President-Elect, 2004 W. Cleon Anderson

Michael R. Lightner

Division I Delegate/Director Gordon W. Day2004-2005 Lewis M. Terman

Region 1 Delegate-Elect/ Charles P. RubensteinDirector-Elect 2004-2005 Barry L. Shoop

Region 3 Delegate-Elect/ Donald W. HillDirector-Elect 2004-2005 George F. McClure

Region 5 Delegate-Elect/ Robert W. Leavene, Jr.Director-Elect 2004-2005 Robert A. Scolli

Region 7 Delegate-Elect/ Robert A. HannaDirector-Elect 2004-2005 John B. Plant

Region 8 Delegate-Elect/ Duncan C. BakerDirector-Elect 2004 Baldomir Zajc

Region 9 Delegate-Elect/ Enrique E. AlvarezDirector-Elect 2004-2005 Rodolfo F. MacDonald

Luiz Pilotto

Standards Association Raymond HapemanPresident-Elect, 2004 Donald N. Heirman

Standards Association Profile 1Board of Governors Laura E. HitchcockMember-at-Large Steven A. Seeker

Profile 4Gerald T. LaneDouglas R. ToppingProfile 5George W. ArnoldL. Bruce McClungProfile 6Roy W. AlexanderPaul J. Menchini

Technical Activities Vice Celia L. DesmondPresident-Elect, 2004 John R. Vig

IEEE-USA President-Elect, Gerard A. Alphonse2004 Jean M. Eason

IEEE-USA Member-at-Large, Gary E. Johnson2004-2005 C. Lee Stogner

Election ballots with biographies of the candidates weremailed out September 1 to all IEEE voting members and thedeadline for the submission of your ballot is November 1,2003. For more information concerning the election (includ-ing biographies) please visit the IEEE website atwww.ieee.org/organizations/corporate/candidates.htm

This is a reminder for EDS members to vote in the 2003IEEE Election for the following positions and candidates.

IEEE Election –Did You Vote YET?

IEEE Election –Did You Vote YET?

Khaled Z. AhmedSalman AkramMohamed ArafaJeffrey BeckGeorge A. BrownKuei-Shu Chang-Liao*Ilan GoleckiYan Kit G. HauDonming HeThorsten HesjedalDavid M. HiemstraPerry A. Holman*Nam HwangWalid A. Kamali*Gennady P. Kulemin*

Shigetaka KumashiroHyeokjae Lee*Steven M. LeibigerYongxiang Li*Anthony S. Oates*Ci-Ling PanRobert PearsonNorman J. RohrerEdward H. SargentKalluri R. SarmaVivek SaxenaToshio SunagaCharles R. Thurber, Jr.*Willie J. Yarbrough*

If you have been in professional practice for 10 years,you may be eligible for Senior Membership, the highestgrade of membership for which an individual can apply.New senior members receive a wood and bronze plaqueand a credit certificate for up to US $25 for a new IEEEsociety membership. In addition, a letter will be sent toemployers, recognizing this new status.

For more information on senior member status, vis-it http://www. ieee.org/membership/grades_cats.html#SENIORMEM To apply for senior member status, fillout an application at http://www.ieee. org/organiza-tions/rab/md/smelev.htm.

* = Individual designated EDS as nominating entity

Congratulations tothe EDS Members

Recently Elected toIEEE Senior Member

Grade!

Congratulations tothe EDS Members

Recently Elected toIEEE Senior Member

Grade!

YOUR HELP IS NEEDED – Request for your assistance in obtaining past pro-

ceedings of the International Electron DevicesMeeting (IEDM)

Attention All EDS Members:

As you may already be aware EDS is currently workingon a project to scan and digitize all the past proceed-ings of the International Electron Devices Meeting(IEDM) that are not currently accessible via IEEE Xplore(pre 1988) issues. In order for this project to be complet-ed all the proceedings must be located and scannedand we have been able to obtain many of the proceed-ings already. However, we still need to acquire theIEDM proceedings (abstracts) from 1955-1964.

If you have any of these proceedings and would like todonate them for scanning it would be greatly appreciated.The proceedings will have to be cut to be able to scanthem properly but if you would like they can be boundback together and returned to you when the job is com-pleted. If you have any of the past proceedings and arewilling to lend them to the Society, please notify StaceyWaters at the EDS Executive Office at your earliest conve-nience and she will make the arrangements to obtain theproceeding(s). Stacey can be reached via e-mail [email protected] or via telephone at +1 732 981 3448.


IMPORTANT -New Requirementsfor Submission of Conference

proceedings to IEEE


PDF SPECIFICATIONS FOR SUBMISSION TO IEEE XPLORE(R) - All conferenceproceedings that are distributed by the IEEE are made available online throughIEEE Xplore(R), the premier delivery system that is used by global customers atleading academic, corporate and government libraries, who download an averageof 1.6 million documents per month. Conference content is an essential part of theIEEE Xplore(R) success story.

The IEEE has adopted new requirements for the submission of conference pro-ceedings to IEEE Xplore(R). The current collection of online conference proceed-ings is largely composed of bitmapped Portable Document Format (PDF) filescreated from scanned print volumes. IEEE staff and volunteers have long plannedto upgrade the display quality of new conference content in IEEE Xplore(R) bymigrating to full-text PDF files. The use of full-text PDFs will markedly improve thedisplay quality and value of conference documents. Full-text PDFs will also pre-sent the opportunity for increased circulation of content in the future, with refer-ence linking and enhanced search capabilities.

In 2000, IEEE volunteer leadership approved an initiative to require that speci-fications be drafted for the submission of full-text conference documents to IEEEXplore(R). Those specifications were circulated in draft form to a focus group ofIEEE conference organizers, who offered comment and support for their adop-tion. The documents have since been issued and can be downloaded athttp://www.ieee.org/confstandards

These specifications are provided for use by all conferences acquired forinclusion in the IEEE Conference Publications Program (formerly known as"Book Broker") in 2003 and thereafter. The IEEE Conference Publications Pro-gram coordinates the submission of conference material to IEEE Xplore(R). Con-ference organizers are urged to share these specifications with their vendors, asthey define the parameters for distilling PDFs from authors' source files.

The IEEE volunteer leadership - the IEEE Technical Activities Board (TAB), theIEEE Publication Services and Products Board (PSPB), and the PSPB/TAB ElectronicServices and Products Committee (ESPC) - voted in February 2002 to approve thenew requirements, effective with conferences held in 2003. In June 2002, the volun-teer boards passed motions defining the following compliance schedule:• During 2003, conference proceedings that are submitted in print format only, or

as non-compliant electronic files, will be scanned from print to bitmappedimage-file PDFs, following the current process.

• Beginning with conferences held in 2004, proceedings that are not provided asfull-text PDF files will be scanned from print as high-quality PDFs, with searchability and display equivalent to full-text PDF. The cost of this conversion is tobe borne by the IEEE organization(s) involved in the conference.

• Beginning with conferences held in 2005, any conference that is financially spon-sored by the IEEE or one of its organizations must provide a full-text PDF record,without exception.There are three documents on the Web site http://www.ieee.org/confstandards:

• IEEE Requirements for PDF Documents Intended for IEEE Xplore(R) describesrequirements for converting application files or PostScript files to full-text PDFfor inclusion in IEEE Xplore(R).

• IEEE Packing List Specification for Conference Proceedings includes instruc-tions for preparing the packing list that will specify the sequence for the PDFfiles prepared for IEEE Xplore(R). This list must accompany full-text PDF confer-ence files submitted to IEEE Xplore(R).

• IEEE Publication Types for Conference Proceedings is a comprehensive list ofelements found in a conference record. It is essential to use this categorized listfor the completion of a packing list or conversion of PDF files.

The Electron Devices Society is com-mitted to providing on-line access toits periodicals. The on-line deliverysystem, IEEE Xplore, provides IEEEmembers with the following bene-fits/capabilities:• Online access to their IEEE personal

subscriptions• Full-text PDF image files for con-

tent, including all original charts,graphics, diagrams, photographsand illustrative material startingfrom 1988

• Links to references and cross linkingbetween EDS publications and oth-er IEEE publications is available inarticles from 1996 through current

• Online available prior to the printequivalent

• Free and unlimited access toabstract/citation records

• Unlimited printing of bibliographicrecords and full-text documents

As an IEEE and EDS member, youhave FREE on-line access to the fullarticles of the following publications: • Electron Device Letters • Transactions on Electron Devices • Transactions on Device and Materi-

als Reliability • Journal of Lightwave Technology

Free on-line access was a newbenefit given to EDS members on 1September 1998.

In addition to the on-line access toperiodicals included with EDS mem-bership, Transactions on Semicon-ductor Manufacturing and theJournal of MicroelectromechanicalSystems are available on-line to theirrespective member subscribers ofthe print version.

To use the Xplore system, youmust establish an IEEE Web Account.This account is also used for renew-ing your IEEE membership online. Ifyou need to establish an IEEE WebAccount, please visit www.ieee.org/web/accounts/

IEEE members can go to theXplore site through the URLwww.ieeexplore.ieee.org. Weencourage all members of the Soci-ety to use this dynamic system.

Renuka P. JindalEDS Publications Chair

University of Louisiana at LafayetteLafayette, LA, USA

On-Line Accessto IEEE JournalsAvailable to EDS

Members

On-Line Accessto IEEE JournalsAvailable to EDS

Members

IMPORTANT -New Requirementsfor Submission of Conference

proceedings to IEEE

We report two EDS Distinguished Lec-turer seminars recently held in Chica-go jointly organized by the IllinoisInstitute of Technology (IIT) and theChicago Chapter. On April 18th, Prof.Hiroshi Iwai of the Tokyo Institute ofTechnology visited the ED/SSC/CASChicago Chapter and delivered a DLseminar at IIT. In his talk entitled“CMOS Downsizing Toward Sub-10nm”, Prof. Iwai outlined the currentstatus and future directions in sub-10nm CMOS research. Following theseminar, Prof. Iwai had discussionswith the Officers of the Chicago Chap-ter regarding various EDS-relatedissues. On May 2nd, Prof. IlesanmiAdesida of the University of Illinois at

Urbana-Champaign delivered a DLseminar at IIT, jointly hosted by IITand the Chicago Chapter. Prof. Adesi-da’s presentation, entitled “Processingand Device Issues in GaN and RelatedCompounds”, provide detailed resultsand general information of the recentadvances in the field of GaN research,which is of promising future semi-conductor for wireless applications.Both seminars were well receivedby the local EDS community, includ-ing students, faculties and workingprofessionals.

Albert WangIllinois Institute of Technology

Chicago, IL, USA

Prof. H. Iwai visited IIT and Chicago Chapter hosted by Prof. A. Wang. From left to right are, Prof. J.Stine (IIT), Prof. Albert Wang (IIT), R. Schenke (Chicago Chapter), Prof. Hiroshi Iwai (TIT), N. Phoenix

(Chair, Chicago Chapter) and R. Rollman (Chicago Chapter).

Prof. I. Adesida visited the IntegratedElectronics Laboratory at IIT hosted by Prof.Albert Wang. Prof. Ilesanmi Adesida (Left) andProf. Albert Wang (Right).

EDS Distinguished Lecturers/Chapter Partners Visit Illinois

Institute of Technology andthe Chicago Chapter

EDS Distinguished Lecturers/Chapter Partners Visit Illinois

Institute of Technology andthe Chicago Chapter


The EDS CD ROM Packageincludes all issues for a given yearof Electron Device Letters (EDL)and Transactions on ElectronDevices (T-ED), as well as the pro-ceedings of the given year of theInternational Electron DevicesMeeting (IEDM). The CDs have aneasy to use interface and aresearchable by author, title and keyword. All materials were publishedusing Adobe Acrobat Technology.Included on the CD ROM are ver-sions of Acrobat Reader forMicrosoft Windows, Apple Macin-tosh and UNIX.

Currently, EDS has six CD ROMPackages available to its mem-bers, i .e . , 1997, through 2002.Each is available for US $25.00(US $19.00 for students). If youwould l ike to receive an orderform for any of these products,please visit the EDS web site at:www.ieee.org/organizations/soci-ety/eds/pubs.html and click on theorder form.

For the 2003 CD ROM Package,you can request it in advance as asubscription via your 2004 IEEEMembership Renewal Bill whenyou receive it this Fall. The 2003EDS CD ROM Package wil l beavailable in June 2004. Once yousign-up to receive the 2003 pack-age via your Member Renewal Bill,you will automatically be billedeach year for subsequent versionsof the package.

Renuka P. JindalEDS Publications Chair

University of Louisiana at LafayetteLafayette, LA, USA

ANNUAL CD ROMPACKAGES

AVAILABLE TOEDS MEMBERS

ANNUAL CD ROMPACKAGES

AVAILABLE TOEDS MEMBERS

ILESANMI ADESIDA Tel: +1 217 244 6379E-Mail: [email protected] Fax: +1 217 244 6375- GaN Processing and Devices- Advanced Fabrication Techniques for Heterostructure FETs- High Speed Optoelectronic Integrated Receivers for Fiber

Optical Communications

RAMESH K. AGARWAL Tel: +1 314 935 6091E-Mail: [email protected] Fax: +1 314 935 4014- Application of Computational Fluid Dynamics Based

Technology to Computational Electromagnetics- Application of CFD Based Technology to Computational

Electromagnetics and Semiconductor Device Simulations- Numerical Simulation of Partial Differential Equations- (PDEs) of Computational Physics on Parallel Computers

SANJAY KUMAR BANERJEE Tel: +1 512 471 6730E-Mail: [email protected] Fax: +1 512 471 8420- Silicon-Germanium-Carbon Hetero-Epitaxy and Devices- Ultra-Shallow Junctions Using Very Low Energy Ion

Implantation- Mos Device Modeling

DONALD P. BUTLER Tel: +1 817 272 1305E-Mail: [email protected] Fax: +1 817 272 7458- Micromachined Uncooled Infrared Sensors- Electronic Transport and Optical Properties in Semiconduct

ing, Nanocrystalline Y-BA-Cu-O

ZEYNEP CELIK-BUTLER Tel: +1 817 272 1309E-Mail: [email protected] Fax: +1 817 272 7458 - Scalable, Compact Noise Models for Advanced and Bipolar

Devices- Infrared Sensors on Flexible Substrates (Smart Skin)- Noise and Reliability in Advanced Microelectronic and

Nanoelectronic Devices

ANTONIO CERDEIRA ALTUZARRA Tel: +52 5 747 73780E-Mail: [email protected] Fax: +52 5 574 77114-Device Modeling and Extraction Procedures-The Harmonic Distortion in SOI MOSFET

MANSUN J. CHAN Tel: +1 510 642 3393E-Mail: [email protected] Fax: +1 510 642 2739

YUHUA CHENG Tel: +1 949 231 4623E-Mail: [email protected] Fax: +1 949 483 6970- Device Modeling for Mixed-Signal/RF Circuit Design- The Influence and Modeling of Process Variation and

Device Mismatch for Analog/RF Circuit Design- Characterization and Modeling of MOSFET Flicker Noise for

RF IC Design

CARLOS H. DIAZ Tel: +1 408 382 8029E-Mail: [email protected] Fax: +1 408 382 8181- CMOS Technology Trends for MS-RF System-On-Chip- Sub 100nm CMOS Technology

ANANTH DODABALPUR Tel: +1 512 232 [email protected] Fax: +1 512 471 8575

MAGALI ESTRADA DEL CUETO Tel: +52 5 747 7000 E-Mail: [email protected] Fax: +52 5 747 7114- Alternative Dielectrics for Ultrathin MOS Devices- Modeling Fabricataion and Characteriziation of Amorphous

and Polycristalline TFTs- Dielectrics for Submicrometric Devices- Modeling of Amorphous and Polycrystalline TFTs

RENUKA P. JINDAL Tel: +1 337 482 6570E-Mail: [email protected] Fax: +1 337 482 6569- Approaching Fundamental Limits on Signal Detection:

Devices and Principles- Nano-FET Fluctuation Physics

ARTURO MORALES-ACEVEDO Tel: +52 5 747-3781E-Mail: [email protected]: +52 5 747-7114 - Fabrication of Silicon Oxynitride Thin Films to be Applied

in Microelectronics Industry- Polycrystalline and Amorphous Thin Films for PhotovoltaicDevices

JAYASIMHA S. PRASAD Tel: +1 408 965 8178E-Mail: [email protected] Fax: +1 408 933 1350- Heterojunction Bipolar Technology and Applications

DIETER K. SCHRODER Tel: +1 480 965 6621E-Mail: [email protected] Fax: +1 480 965 8118- Negative Bias Temperature Instability in p-Channel MOSFETS


The EDS Distinguished Lecturer Program exists for the purpose of providing EDS Chapters with a list of quality lecturers whocan potentially give talks at local chapter meetings. To arrange for a lecture, the EDS chapters should contact the DistinguishedLecturer directly. A general guideline for the visit, but not the absolute rule, is that the lecturer should be able to include themeeting site with an already planned travel schedule at a small incremental cost to the travel plan. Alternatively, a prior coinci-dent travel plan would not be required if the lecturer is already located within an approximate fifty mile radius of a meetingsite. Although the concept of the program is to have the lecturers minimize travel costs by combining their visits with plannedbusiness trips, EDS will help subsidize lecturer travel in cases where few/no lecturers will be visiting an area and/or a chaptercannot pay for all the expenses for a lecturer trip. For a full listing of EDS Distinguished Lecturers and travel plans please con-tact Laura Riello of the EDS Executive Office (Tel: 1-732-562-3927, Fax: 1-732-235-1626, E-Mail: [email protected]).

EDS DISTINGUISHED LECTURER PROGRAM -LECTURERS RESIDING IN CENTRAL, WESTERN& SOUTH WESTERN USA AND LATIN AMERICA

EDS DISTINGUISHED LECTURER PROGRAM -LECTURERS RESIDING IN CENTRAL, WESTERN& SOUTH WESTERN USA AND LATIN AMERICA

- Carrier Lifetimes in Semiconductors- Contactless Surface Charge Semiconductor Characterization

KRISHNA SHENAI Tel: +1 312 996 2633E-Mail: [email protected] Fax: +1 312 996 0763- Status and Trends in High-Power Semiconductor Devices- Mixed Device and Circuit Simulation - Low-power Electronics Technologies for Portable and Wire-

less Applications- Potential of Emerging Wide Bandgap Semiconductor

Technologies Computer Integrated Electronics Education

JOHANNES (HANS) M.C. STORK Tel: +1 972 995 2371E-Mail: [email protected] Fax: +1 972 995 1480- The realities of System-on-Chip Integration- Low Power for Internet Data Centers- Technologies for Ubiquitous Computing Infrastructure- Process and Design Issues for sub-100 nm CMOS SoC

Integration Technologies for Ubiquitous Computing

YUAN TAUR Tel: +1 858 534 3816E-Mail: [email protected] Fax: +1 858 822 1247- Challenges Near the Limit of CMOS Scaling

ALBERT Z.H. WANG Tel: +1 312 567 6912E-Mail: [email protected] Fax: +1 312 567 8976- Advanced ESD Protection for Integrated Circuits

CARY Y. YANG Tel: +1 408 554 6814E-Mail: [email protected] Fax: +1 408 554 5474- Ultra-thin Oxide Characterization- MOSFET Modeling - Past, Present and Future

PAUL K.L. YU Tel: +1 619 534 6180E-Mail: [email protected] Fax: +1 619 534 0556- Recent Advances in Photonic Devices for RF/Wireless

Communication Application


IEEE policy currently allows a 50% dis-count on IEEE dues and one societymembership for any individual whoseannual salary is less than US$11,300.This offering is referred to as the Mini-mum Income Special CircumstancesOption. The Electron Devices Societyhas a program for its chapters calledthe Membership Fee Subsidy Program(MFSP), which will both complementthe IEEE Minimum Income offering andprovide a significant additional benefitfor qualified individuals.

With the EDS Membership Fee Sub-sidy Program, EDS will pay the other50% of the IEEE and EDS dues that arenot covered by IEEE for individualsqualifying for the Minimum Incomeoption for a maximum of 10 individu-als per chapter. These individuals canbe either prospective newstudents/members or existing stu-dents/ members. This program is alsoavailable to all unemployed members.Although the IEEE Minimum Incomeoption allows individuals to purchasepublication subscriptions for one soci-

ety at a 50% reduced rate, the EDSMFSP does not cover the payment ofpublication subscriptions.

If a chapter has individuals whoqualify for the reduced IEEE Mini-mum Income offering and the EDSMFSP, all the Chapter Chair needs todo is coordinate the obtaining andsubmission of the IEEE/EDS member-ship application forms (for prospec-tive new members) and/or IEEEmembership renewal bills (for exist-ing members) for the individualshe/she is proposing to be covered byEDS. The Chapter Chair should alsocontact the EDS Executive Office toadvise of their participation in theprogram. All application forms andrenewal bills should be mailed to theEDS Executive Office. Once received,the application forms and bills will becoded by the Executive Office with aspecial account number and submit-ted to the pertinent IEEE departmentfor processing.

For a given year of participation inthe EDS MFSP, a chapter must replace a

minimum of six of the ten memberswho were paid for by EDS in the previ-ous year. Also, a given member willonly be allowed to have his/her mem-berships paid for by EDS a maximum oftwo times. These two policies will avoidhaving the same members receive thebenefit each year and encourage newmembership. These EDS membersreceiving the MFSP benefits are encour-aged to participate in chapter activitiesand promote its growth.

Aside from being a program forexisting EDS chapters, the EDS Mem-bership Fee Subsidy Program is alsoan extremely good means to helpfacilitate the launching of new chap-ters in low income geographicalareas. For any questions concerningthe program, please contact LauraRiello ([email protected]) of the EDSExecutive Office.

James B. KuoEDS Membership Chair

National Taiwan UniversityTaipei, Taiwan

EDS MEMBERSHIP FEE SUBSIDY PROGRAM(MFSP)

EDS MEMBERSHIP FEE SUBSIDY PROGRAM(MFSP)


In Memory of Dr. Kevin Francis Brennan

Dr. Kevin Francis Bren-nan of Atlanta, GA diedAug. 2, 2003 after a three-year battle with a rare formof pancreatic cancer.

He is survived by his wifeof 5 _ years, Lea A. McLees;their pets, Casper and Jack;his mother, Rita C. Brennanof Ocala, FL; brother, GregoryJ. Brennan of Brick, NJ;mother-in-law, Norma J.McLees of Auburn, GA;brother- and sister-in-law,David W. and Davida D.McLees of Greenville, NC;and extended family, friends,students and colleagues. Hewas preceded in death by hisfather, Frank J. Brennan.

Brennan was a Westfield,N.J., native. He earned aB.S. in physics from theMassachusetts Institute ofTechnology in Cambridge;and an M.S. physics and a Ph.D. inelectrical engineering from the Uni-versity of Illinois at Urbana-Cham-paign. A professor in Georgia Tech’sSchool of Electrical and ComputerEngineering since 1984, Brennantaught, performed research and didservice work for the university, aswell as graduating 11 Ph.D. studentswho work at leading U.S. companiesand universities. A National ScienceFoundation Presidential Young Inves-tigator, he authored almost 150 refer-eed journal papers and more than100 conference articles. Brennan heldfive U.S. patents and consulted forindustry and government.

Brennan specialized in the in-depththeoretical analysis of semiconductordevices and materials at the submi-cron level. He also developed super-

lattice devices for electroluminescentdisplays -- such as those that glow onyour car dashboard at night -- andinfrared detectors – such as thoseused in night vision goggles.

Brennan created computer simula-tions of high-speed, high frequencytransistors, as well as of quantummechanical effects in semiconduc-tors. His specialty was modelingwide-band-gap semiconductors forfuture high-power, high-frequency,high-thermal-resistance applicationssuch as automobile and jet enginesand power amplifiers for wirelesscommunication systems.

Nationally, Brennan was a Distin-guished Lecturer for the Institute ofElectrical and Electronics Engineers(IEEE). He was invited around thecountry to discuss future approaches

to computing hardware, and theimpact of wide-band-gap semi-conductors on wireless commu-nications. He served on theboard of the Journal of Light-wave Technology, as well asseveral national technologyadvisory boards. Brennan was amember of IEEE, the AmericanPhysical Society and Sigma Xi.

Brennan authored “ThePhysics of Semiconductorswith Applications to ElectronicDevices” (Cambridge Universi-ty Press), “Theory and ModernElectronic SemiconductorDevices” (John Wiley and SonsTextbook Division); and co-edit-ed “Topics in High Field Trans-port in Semiconductors”(World Scientific). An addition-al book wil l be publishedposthumously.

At Georgia Tech, Brennanwas an Institute Fellow and a

Byers Professor in Optical Network-ing. He was instrumental in organiz-ing Georgia Tech’s first internalsabbatical program on “The Future ofComputing Technology,” whichexplored new areas of collaborationon campus.

In 2003 Brennan won GeorgiaTech’s highest award, DistinguishedProfessor of the Year. He received aspecial recognition award for gradu-ate education and research scholar-ship presented in 2002.

In his free time Brennan enjoyedgrilling, reading American and scientif-ic history books, running, backcountryhiking, sailing, model railroading, wine,good food and travel. He was knownfor his stunning blue eyes, handsomephysique, great one-liners and a ready,booming and infectious laugh.

In Memory of Dr. Kevin Francis Brennan

Dr. Kevin Francis Brennan


EUROPE, MIDDLEEAST & AFRICA(REGION 8)

USA, Canada andLatin America(Regions 1-6, 7 & 9)

USA, Canada andLatin America(Regions 1-6, 7 & 9)

ED Washington/Northern Virginia- by Michael HurtThe Washington/Northern VirginiaEDS Chapter held two meetings dur-ing the months of April and May atGeorge Mason University. The Aprilmeeting was a talk on Spin BasedQuantum Computers by Dr. SupriyoBandyopadhyay an EDS Distin-guished Lecturer, of Virginia Com-monwealth University. Quantumcomputers promise vastly enhancedcomputational prowess and anuncanny ability to solve intractableproblems. More importantly, aquantum computer can solve prob-lems much more efficiently than aclassical computer.

Dr. Bandyopadhyay presented astimulating lecture with a focus onthe solid state aspects of the world ofquantum computers, including exam-ple images and lab results of quan-tum devices.

In May, Dr. Dimitris E. Ioannouof George Mason University pre-sented an overview of Fully Deplet-ed SOI MOSFETs. Because of theinherent electrostatic coupling ofthe front and back channel, the Ful-ly Depleted (FD) SOI MOSFET wasthought to be superior to both Par-tially Depleted (PD) SOI and bulkMOSFETs. But a closer look at thedevice physics revealed that thissuperiority was diminished in thedeep submicron range. Hence,there is currently a renewed inter-est on FD-SOI, because of its poten-tial for continued scalability beyondthis limit. Dr. Ioannou reviewed thelatest results from the literature,concerning the performance andreliability of extremely scaled FDtransistors, and offered predictionson where future work should bedirected.

This chapter is planning a series oflectures on nanotechnology for theFall term.

ED/CPMT Orlando - by Anwar SadatThe Electron Devices/Component Pack-aging & Manufacturing Society Orlan-do Chapter held a meeting on June 18,2003 at the University of Central Flori-da campus. Dr. Huikai Xie from theUniversity of Florida delivered a talk on“CMOS-MEMS: Process, Design andApplications”. In his talk, Dr. Xie firstintroduced a bulk silicon based CMOS-MEMS process and then he focused ontwo applications: inertial sensors andmicro mirrors. Based on the CMOS-MEMS process, he introduced aunique technique that they have devel-oped to realize three-dimensionalmotion sensing and actuation that isessential to realize integrated inertialmeasurement units (IMUs) for naviga-tion, guidance and control of vehicles,spacecrafts and missiles. He thenbriefly introduced a few exampledevices including an accelerometerand a gyroscope. He also talked aboutthe micro mirrors, which use the sametechnique, and their applications inoptical coherence tomographic (OCT)imaging. His group assembled the firstever-micro mirror-based endoscopicOCT imaging system for in vivo imag-ing of biological tissue. Preliminaryexperiments show very promising res-olution and scanning speed. This workopens the possibility to make compact,high-performance and low-cost OCTcatheters and endoscopes for futureclinical applications by using MEMStechnology. Compatibility of MEMSfabrication with mainstream CMOStechnologies not only provides high

sensitivity, on-chip “smart” condition-ing circuitry and low cost, but also hassuch advantages as scalability, multi-vendor accessibility and short designcycles. The lecture took about an hourand another 15 minutes for questionsand answers. There were around 30attendees in the meeting, mostly stu-dents and faculty from electrical &computer engineering departmentsand School of Optics (CREOL). Foradditional information, contact AnwarSadat at [email protected].

— Murty Polavarapu, Editor

EUROPE, MIDDLEEAST & AFRICA(REGION 8)

Message from the PastNovosibirsk State TechnicalUniversity Student BranchCounselor- by Alexander V. Gridchin

I have beeninvolved in IEEEEDS activitiessince 1998 asone of the orga-nizers of the IEEEN o v o s i b i r s kState TechnicalUniversity Stu-dent Branch.Since the date ofestablishing the

student branch I was serving as aCounselor. It was a time of good prac-tice for me. I was studying to organize

Dr. S. Bandyopadhay at the Chapter meeting.

Dr. Dimitris Ioannou at the Chapter meeting

Regional and Chapter NewsRegional and Chapter News

Alexander V. Gridchin


the meeting, to invite lecturers, toserve members via e-mail, to plan theStudent Branch activities, to writereports, to renew IEEE memberships,to subscribe to IEEE journals. One ofmost difficult problems for me asCounselor was forming the team andpreparing the person who can replaceme in the future. Now, four years later,I can tell you that this problem is suc-cessfully solved. I’m very appreciativeto all of my colleagues who havemade me an unprecedented assis-tance during the period of last fouryears like Mr. William F. Van Der Vort,Prof. Cary Yang, Prof. Hiroshi Iwai,Prof. Rolf Remshardt, Prof. Jan VanDer Spiegel and many other people.Now I want to introduce you to ournew Student Branch Counselor, Mr.Vladimir A. Kolchuzhin. During the lasttwo years he was successfully servingthe IEEE Novosibirsk State TechnicalUniversity (NSTU) Student Branch as aBranch Chair.

ED Novosibirsk State TechnicalUniversity Student Branch - by Vladimir A. KolchuzhinOur IEEE EDS Student Branch Chapterin the NSTU was founded in 1999, andnow is a good time to summarize ourworking activity. As one of first IEEEEDS Student Branch Chapters in Rus-sia, we were faced with a lot of afinancial and organization problemsduring the process of establishing ourbranch. However, due to support fromthe Dean of Faculty of Radio Engineer-ing, Electronics and Physics, Dr. VictorA. Gridchin, and to the outstandingenthusiasm from the students wesolved most of these problems.

Now that our EDS Student branchchapter is firmly established, all of our

students can benefit from EDS mem-bership. They read EDS publications,like IEEE Electron Device Letters, IEEETransactions on Electron Devices, andIEEE Transactions on Electronics Pack-aging Manufacturing, which are anindispensable source of knowledge inthis field. Most of our students takepart in EDS sponsored/co-sponsoredinternational conferences, like IEEESensors, Euro sensors, APEIE andKORUS. As a result, an unprecedent-ed increase of student scientific publi-cations takes place. Now our studentmembers send their papers to 3-5international conferences and takepart in these meetings each year.There is a good trend among ourstudent members. After finishingtheir education most of our IEEE stu-dent members are continuing theirresearch activity at the University asresearch assistants or Ph.D. studentsand keeping or upgrading their IEEEmembership.

At the beginning of the develop-ment of our Student Branch, wedecided to establish our own work-shop in order to give our studentsa possibility to publish their resultsin English in IEEE-related proceed-ings. So we established an annual“Electron Devices and Materials”meeting. This meeting is not only aworkshop, which participants fromall ex-USSR terr i tory and othercountries attend, but also includestutorials where well known scien-t is ts f rom Germany, USA andSouth Korea report about the mostinteresting trends in the field ofelectron devices.

Among our activities, the mostimportant one is the student scientific

research. Due to support given byIEEE EDS, we started some projects inthe field of simulation and characteri-zation of microsystem devices. All ofour EDS members are involved inrealizing this project as members ofresearch teams, whose efforts areconcentrated on simulation anddevelopment of the technologicalprocess for the microsystem devices.

Now, with the help of the newlyestablished Siberian section, we planto increase our efforts for involvingnew members and creating new stu-dent scientific teams in the EDS fieldof interests.

— Alexander V. Gridchin, Editor

ED Poland

- by Andrzej Napieralski The ED Poland Chapter sponsored twoInternational Conferences. The firstone, “The 6th Symposium Diagnosticsand Yield: Advanced Silicon Devicesand Technologies for ULSI Era,” washeld June 22-25, 2003 in Warsaw,Poland. A number of invited speakers(including such leading scientists asSiegfried Selberherr – author of MINI-MOS) from Austria, Belgium, France,Germany, Japan, Norway, UnitedKingdom, U.S.A., Ukraine and Polandpresented papers on the most impor-tant issues concerning semiconductortechnology, device performance, mod-eling and characterization. A lot ofattention was paid to the future ofdevice scaling and the resulting tech-nological difficulties. Advantages ofnew materials, such as SOI, SiGe,SiGeC and strained silicon, as well asthe difficulties associated with the useof these materials, were anotherVladimir A. Kolchuzhin

Team of EDS NSTU Student Branch Chapter, from left to right: Mr. Nicolay M. Shmakov, Mr. Vladimir A.Kolchuzhin, Mr. Alexey V. Shaporin, Mr. Dmitry V. Brunev and others (Collage by Mr. Alexey V. Shaporin)


important topic. Several papers weredevoted to modeling issues encoun-tered in SiGe-based devices, powerdevices, short-channel MOSFETs anddevices fabricated in very thin semi-conductor layers. The subject of ultrathin SiO2 and high-k dielectrics wasalso covered. Three special sessionssponsored by NEXUS were devoted toMEMS. A special IEEE meeting wasdevoted to the discussion of futuredirections of the NEXUS program.

The Symposium retained its tradi-tional character of an extensive tutori-al, which included the presentation of25 invited papers and 20 posters. Aconsiderable number of graduate andPh.D. students participated in theSymposium. Conference materials willbe published in the Journal ofTelecommunications and InformationTechnology.

The second one: “The 10th JubileeInternational Conference: “MIXEDDESIGN OF INTEGRATED CIRCUITSAND SYSTEMS” - MIXDES’2003” washeld June 26-28, 2003 in Lodz, Poland.During the last 10 years, MIXDES hasbeen growing to become one of thelargest microelectronics conferencesin Central and Eastern Europe. Morethan 150 submitted articles werereviewed by the Program Committeeto put together a high quality technicalprogram of 131 papers from 28 coun-tries organized in oral and poster pre-sentations. During the conference, fiveinvited papers were presented byinternationally recognized distin-guished speakers: Daniel Foty fromGilgamesh Associates, USA, KrzysztofIniewski from PMC Sierra Inc., Canada,Andreas Wild (replaced by WladyslawGrabinski) and Charles Cordonnierfrom Motorola, and Hisayo SasakiMomose from Toshiba Corp., Japan.Two special sessions were organized:

“Compact Modeling and its Standard-ization”, by Dr. Wladyslaw Grabinskifrom Motorola Modeling Centre inGeneva and “Optoelectronics andPhotonics” organized by Dr. MarekTurowski from CFD Research Corpora-tion in Huntsville USA.

In addition to the regular program,one course and three tutorials wereorganized as follows: Tutorial - “ICDesign for Manufacturability” by Prof.Wieslaw Kuzmicz from IMiO WarsawUniversity of Technology; Tutorial -“Design and Modeling of MEMS Sen-sor and Actuators”; Course -“Advanced Thermal MeasurementTechniques” by Department of Micro-electronics and Computer ScienceTechnical University of Lodz (DMCSTUL); and Tutorial - “Half Day on Ther-mal Measurement Techniques” byDMCS TUL, Lviv Politechnic, Ukraineand Budapest University of Technolo-gy. All these events were organized inthe frame of FP5 European projectREASON: “Research and TrainingAction for System on Chip Design”.During MIXDES, the plenary meetingof FP5 European project SEWING:“System for European Water Monitor-ing” coordinated by Prof. Andrzej Filip-kowski from ISE Warsaw University ofTechnology in Poland was organized.Two new members joined the Interna-tional Program Committee: Dr. H.Wang from Southern Illinois Universityand Dr. Mariusz Zubert from TechnicalUniversity of Lódz. Information aboutnext year’s conference is posted onlineat http://www.mixdes.org.

ED/SSC Yugoslavia- by Tatjana PesicThe ED/SSC Yugoslavia Chapter orga-nized a session on Microelectronicsand Optoelectronics at the 47th Confer-ence on Electronics, Telecommunica-tions, Computers, Automation andNuclear Engineering (ETRAN 2003),held 8-13 June in Herceg Novi, Mon-tenegro. A total of 48 papers were pre-sented at this session, including invitedpapers entitled “Bipolar TransistorCompact Modeling” (by Dr. SlobodanMijalkovic, DELFT University of Tech-nology, Netherlands) and “Silicon Pho-toniocs Circuits” (by Prof. GrahamReed, University of Surrey, UK). TwoBest Student Paper awards were pre-sented to Ms. Elva Jovanovic, Universi-ty of Nis, for the contribution entitled

“Simulation of Vertical Hall Device inHigh-Voltage CMOS Technology”, andto Ms. Ivana Jokic, IHTM Belgrade, forthe contribution entitled “Determinationof the Desorption Energy that Charac-terizes the Adsorption-DesorptionProcess in MEMS and NEMS Sensors”.The session was attended by more than60 participants, most of them beingmembers of IEEE EDS and SSCS.

— Andrzej Napieralski, Editor

MTT/ED/AP/LEO UK&RI - by Terry OxleyThe three major annual events estab-lished/sponsored by the Chapter andplanned for 2003 are summarizedbelow (the first two events fall withinthe times of writing this report andnewsletter publication).

The 4th IEEE/IEE European MIDAS(Mm-wave, microwave and rf Integrat-ed circuit Design And Simulation)Workshop titled “Photonic ICs for CostEfficient Optical Networks and MilitarySystems” is planned for the 7th and8th of July 2003 at The University ofSurrey, Guildford. The focus onmicrowave, millimetre-wave and RFintegrated circuits combined in sys-tems together with opto-electronicscircuits, best described as `PhotonicSolutions‘ to commercial and militarysystems and applications, is aimed tofacilitate the design of photonic inte-grated circuits by increasing theunderstanding and cross fertilizationbetween the two traditional expertiseareas of microwave and opto-elec-tronic circuit design. The technicalprogram combining four sessionscovers the topics of Optical Communi-cations, Microwave Design, AdvancedTechniques for Optical Networks andPhotonic ICs for Military Applications,with all speakers being invitedacknowledged leaders in the field. Theschedule for the workshop dinner inthe evening of the first day includesan invited lecture on Silicon-BasedOptoelectronics.

The 8th IEEE High Frequency Post-graduate Student Colloquium, aimedto provide an opportunity for studentresearchers to present their work andgain experience in the art of profes-sional presentation, is planned for the8th and 9th of September 2003 atQueens University, Belfast. The tech-nical program included six oral ses-sions plus poster presentations, with

Invited speaker Hisayo Sasaki Momose receivingthe flowers from the MIXDES Session Chairman,

Prof. Andrzej Jakubowski.


ASIA & PACIFIC(REGION 10)

the oral sessions covering the topicsof Wave Propagation, Dielectric Char-acterisation, Non-linear Devices, Guid-ed Propagation, Passive Devices andAntennas. The evening dinner on thefirst day is followed by an Invited Talk.Prize presentations for best oral andposter papers are included in the clos-ing session.

The 11th IEEE International EDMO(Electron Devices for Microwave andOptoelectronic Applications) Sympo-sium, aimed at providing a forum formicrowave and optoelectronic devicedesigners, technologists and end-users, to discuss advances in deviceperformance and system require-ments, is planned for the first time inthe USA. The EDMO Symposium, inits eleventh consecutive year, will takeplace 17-18 November 2003 at CentralUniversity of Florida, USA. For moredetails, please see the EDMO websitewww.edmo-symposium.org, or for thelocal organizer http://www.ucf.edu).Congratulations to David Rhodes ofFiltronics Ltd UK, the 2003 recipient ofthe MTT-S Microwave Career Award.

For further information on Chapternews, please contact the ChapterChairman: Ali A Rezazadeh, Professorof Microwave Engineering, Dept. ofElectrical Engineering and Electronics,University of Manchester Institute ofScience and Technology (UMIST), P.O.Box 88, Manchester M60 1QD, UK. Tel:+44 (0) 161 200 4708 (Sec.4801). E-Mail: [email protected].

— Gady Golan, Editor

ASIA & PACIFIC(REGION 10)AP/ED Bombay -by Prof. M.B. PatilProf Nicholas Shuley, University ofQueensland gave a talk on “Fastapproximation of Green’s functions inMPIE formulations for large antennasand scatterers,” on April 8, 2003. Thetalk led to questions from the audienceand technical discussion.

The IEEE AP/ED Bombay Chapterco-sponsored a two-day workshop onVLSI for faculty members in engineer-ing colleges at the PICT School ofInformation Technology and Manage-ment, Pune on May 6 and 7, 2003. Theobjective of the workshop was to cre-ate awareness among faculty mem-

bers about VLSI design andtechnology, future prospects ofVLSI, and the manpower needsof industry in the VLSI area.Twenty faculty membersattended the program and ben-efited enormously from thelectures and the laboratorysessions organized as a part ofthe program.

On May 12, 2003, Prof. K. N.Bhat, Indian Institute of Tech-nology, Madras, talked on“Polysilicon piezoresistive pres-sure sensors.” He described thechallenges involved in the fabri-cation of the sensors, innova-tive ways to address theproblems, and characterization of thefabricated devices.

For more information, please con-tact Prof. MB Patil, Electrical Engi-neering Department, IIT Bombay,Powai, Mumbai 400076, India, Email:[email protected].

ED/MTT India -by Dr. K.S. ChariThe Chapter Chair addressed a gather-ing of under- and postgraduate studentsat the Department of Information Tech-nology Delhi on “Simulation and Char-acterization Issues” on 15 April. Mattersrelated to evolution of simulation as acontemporary tool for device design,structure of simulator, model validation,benchmarking and testing issues weretouched upon. The second talk by Dr S.Ahmed on “Numerical Techniques forSimulation, Optimization and Modelingof Devices”. This talk covered the

aspects of popular numerical approach-es for simulation, role of optimizers insimulation, algorithms for optimization,correlation of simulator data with exper-imental data etc. The Chapter Chairgave a talk on “Intellectual Propertyissues in Semiconductor Lay out Designand Indian efforts” on 12th June at ameeting of Semiconductor Industry atBangalore. The meeting was held inassociation with the ManufacturersAssociation of Information Technology.Several issues related to the Semicon-ductor Topography, Registrations of theIPR as enablers of innovation, enforce-ment issues, infringement matters,approaches for detection of IC layoutduplication, etc., were discussed. Thefourth talk was delivered by the ChapterChair at Delhi to a gathering of LINUXuser and developer groups at theDepartment of Information Technologyon 22nd June. The fifth talk held on 25th

Dr. Rajendra Datar, Cirrus Logic, Pune, speaking at the VLSIWorkshop organized in Pune on May 6-7, 2003

Section of Attendees of NASET’2003


June was an invited lecture on“Advanced Diagnostic Techniques forNondestructive Characterization andFailure Analysis of IC” delivered by MrTan Ah Young from NPTest Technolo-gies Pte Ltd. (Singapore). Topics cov-ered included analysis of problematicparts of IC, case studies on 0.18 and0.13 micron, evolution of probing meth-ods, role of detectors in the resolutionand analysis capabilities, design debugexperiences with CMOS devices tech-nology issues and results of failureanalysis using optical technologies.These meetings were attended by about30-40 participants from industry, acade-mia and students.

The Chapter, in association withthe Electronics Science Department ofKurukshetra University, organized atwo day National Level Symposiumon Electronics Technology (NASET2003) during March, 2003. Details ofthe events were reported in the lastNewsletter. A group photograph of asection of the attendees to the event isattached.

For more information, please con-tact Dr. K.S. Chari, Director, Micro-electronics & Photonics Division,Department of Electronics, C.G.O.Complex, New Delhi, India, Tel: 91-11-4361464; Fax: 91-11-4363082; email:[email protected].

ED/SSC Bangalore -by Prof. Navakanta BhatA technical seminar was held on 24April in collaboration with the NationalSemiconductor (Bangalore). Dr. NikhilBalaram, CTO Displays group, NationalSemiconductor, USA delivered the sem-inar on “Display Electronics for DigitalTelevision”. He presented the typicalsystem level architecture of digitalTV/monitor and elaborated on thedesign issues of individual buildingblocks. The seminar was attended byabout 150 people, mostly from industry.

A three day workshop on VLSI &MEMS was organized in Mysore 1-3May with the IEEE student branch ofthe Sri Jayachamarajendra Collegeof Engineering (SJCE), Mysore. Theaudience for the workshop includedpostgraduate students and facultyfrom different engineering colleges.Dr. C.P. Ravikumar from TexasInstruments, India delivered a semi-nar on Introduction to VLSI, CADtools, VLSI Architectures and appli-cations. Dr. P.R. Suresh from Texas

Instruments, India delivered a semi-nar on Layout Verif ication. Dr.Navakanta Bhat from Indian Instituteof Science delivered seminars onSubthreshold MOS circuit designand RF circuit design and MEMS. Dr.D.V. Poornaiah from Indian Tele-phone Industries delivered seminaron VLSI for wireless communication.

Dr. Chandu Visweswaraiah fromIBM T.J. Watson research lab present-ed a technical talk titled “Death, Taxesand Failing chips” on 18th June at theIndian Institute of Science, Bangalore.The theme of his talk was the fact thatthe need to deal with variability instate-of-the-art chip design is asinevitable as death and taxes. He pro-

posed the need for “probabilistic cir-cuit design” as a new paradigm andpresented the top 10 items whichform the wish list for such a para-digm. The talk was very well receivedwith an audience of 140 people.

For more information, please con-tact Prof. Dr. Navakanta Bhat, email:[email protected].

— Wee Kiong Choi, Editor

ED Kansai - by Hiroyuki SakaiThe executive committee meeting forthe “2003 International Meeting forFuture Electron Devices, Kansai (2003IMFEDK)” was held at the Hotel GranviaKyoto, Kyoto, Japan on March 31,

The inauguration of 3 day workshop on VLSI and MEMS at SJCE, Mysore

The executive committee meeting for 2003 IMFEDK


2003. Professor Yoshio Nishi, GeneralChair of the Conference, came acrossthe ocean to participate in this meetingfrom Stanford University. Detailedissues including the paper selection,presentation manners, conferenceoperations, advertisements, etc., arediscussed and decided. The confer-ence will be held at Osaka UniversityConvention Center, Osaka, Japan July16-18, 2003.

ED Japan - by Naoki YokoyamaOn January 20 2003, a Japan Chapterofficer's meeting was held in Tokyo. Theactivities and budget for 2002 and 2003were discussed with members of theIEEE Japan Council. The Japan Chapter,technically supported more than 40workshops in 2002 with other societies,including the Institute of Electronics,Information and Communication Engi-neering Japan, Japan Applied PhysicsSociety, and the Institute of ElectricalEngineering of Japan. The chapterestablished a Japan Chapter StudentAward selecting 5 student winners in2002. The Chapter Operating Committeeof the Japan Council financially support-ed this award. The number of EDSmembers in the Japan Chapter is morethan 1,000, with 53 Fellows and 77senior members. The number of senior

members is slightly increasing. Theplans for the 2003 Japan Chapter Stu-dent Award and the renewal of JapanChapter web page were approved. TheChair proposed to have a DL meeting inthe Tokyo area in July at the Tokyo Insti-tute of Technology.

ED/SSC Chapter, Seoul - by Taegeun ParkAs a part of the annual support ofthe conferences, the ED/SSC SeoulChapter sponsored the VLSI and

CAD Conference, held at EwhaWomen’s University, Suwon, Koreaon May 10, 2003. The number ofattendees was about 150. The Chap-ter sponsored $300 for the bestpaper awards. The Seoul Chapterannually presents a “Best StudentPaper Award” to recognize out-standing student authors from thelocal area (Seoul, Korea), who pub-lished high quality papers in theIEEE EDS and SSCS journals. Forarticles included in the 2003 jour-nals, two student authors (one ofeach from EDS and SSCS) will beselected for the prize. A $200 cashprize will be awarded with the prizebeing presented at the SOC Designconference being held in October2003. The IEEE Seoul Chapter hasheld a chapter meet ing on abimonthly basis. In 2003, the SeoulChapter plans to invite two IEEE Dis-tinguished Lecturers from EDS andSSCS and sponsor several localtechnical conferences (IEEK CADand VLSI Conference, IEEK Circuitsand Systems Conference, and SOCDesign conference). We also madean effort on the membership pro-motion by opening the membershipdevelopment desk at local meetings.

— Hisayo S. Momose, Editor

Japan Chapter Officers and executive members in Japan Council

ED/SSC Seoul Chapter meeting


October 5 - 9, 2003, T International Confer-ence on Miniaturized Chemical and Bio-chemical Analysis Systems Location: The Resortat Squaw Creek, Squaw Valley, CA, USA Contact:Shirley Galloway, 2320 6th Ave, San Diego, CA,USA 92101-1643 Tel: +1 619 232 9499 Fax: +1619 232 0799 E-Mail: [email protected]: 4/1/03 www: http://www.micro-TAS2003.org

October 6 - 7, 2003, T European GalliumArsenide and Other Semiconductor Applica-tions Symposium Location: ICM Convention Cen-tre, Munich, Germany Contact: Ing. Schiechtweg,Fraunhofer-Institute IAF, Tullaster 72 79108, Freiburg,Germany Tel: +49 761 5159 534 Fax: +49 7615759 565 E-Mail: [email protected] Deadline: 7/12/03 www: http://www.eumw2003.com/gaasconf.html

October 6 - 10, 2003, T European Symposiumon Reliability of Electron Devices, FailurePhysics and Analysis Location: Palatium-Arca-chon, Arcachon, France Contact: Nathalie Labat,Universite Bordeaux 1 - Laboratoire IXL, 351, coursde la Liberation, Talence, France 33405 Tel: +33556 84 6551 Fax: +33 556 37 1545 E-Mail:[email protected] Deadline: 4/6/03 www:http://www.esref.org

October 12 - 15, 2003, T IEEE Conference onIntelligent Transportation Systems Location:Regal International East Asia Hotel, Shanghai, ChinaContact: Fei Wang, University of Arizona, PO Box210020, Tucson, AZ, USA 85721 Tel: +1 520 6216558 Fax: +1 520 621 6555 E-Mail:[email protected] Deadline: 3/1/03 www:http://www.ewh.ieee.org/tc/its/conf.html

October 15, 2003, T Workshop and IEEE EDSMini-Colloquim on NA nometer CMOS Tech-nology Location: Nanyang Technological Universi-ty, Singapore Contact: Zhou Xing, NanyangTechnological University, Division of Microelectron-ics, Singapore Tel: +65 6790 4532 Fax: Not Avail-able E-Mail: [email protected] Deadline: NotAvailable www: Not Available

October 20 - 23, 2003, * IEEE InternationalIntegrated Reliability Workshop Location:Stanford Sierra Camp, South Lake Tahoe, CA, USAContact: Roy and Becky Walker, 301 North Madi-son, Rome, NY, USA 13440 Tel: +1 315 339 3968Fax: +1 315 336 9134 E-Mail: [email protected]: 7/6/03 www: http://www.irps.org/irw/

October 21 - 24, 2003, T IEEE InternationalConference on Sensors Location: Canada Shera-ton Centre Hotel, Toronto, Canada Contact: Mark

Goldfarb, Palisades CMS, 411 Lafayette Street, Suite201, New York, NY, USA 10003 Tel: +1 212 4608090 Fax: +1 212 460 5460 E-Mail:[email protected] Deadline: 4/14/03www: http://www.ewh.ieee.org/tc/sensors

October 28 - 31, 2003, T International Micro-processes and Nanotechnology ConferenceLocation: Tokyo Fashion Town, Tokyo, Japan Contact:Hiroaki Masuko, Business Center for Academic Soci-eties Japan, 5-16-9 Honkomagome, Bunkyo-ku,Tokyo, Japan 113-8622 Tel: +81 3 5814 5800 Fax:+81 3 5814 5823 E-Mail: [email protected] Dead-line: 7/10/03 www: http://www.nano.ee.es.osaka-u.ac.jp/mnc

November 6 - 7, 2003, T International Work-shop on Gate Insulators Location: NationalMuseum of Emerging Science & Innovation, Tokyo,Japan Contact: Fumio Ootsuka, 16-1 Onogawa,Tsukuba-shi, Ibaraki-ken, , Japan 305-8569 Tel: +81298 49 1260 Fax: +81 298 49 1185 E-Mail: [email protected] Deadline: 8/20/03 www:http://www.semiconductorportal.com/iwgi/index.cfm

November 9, 2003, T Gallium Arsenide Reliabili-ty Workshop Location: US Grant Hotel, San Diego,CA, USA Contact: Anthony Immorlica, BAE Systems,65 Spit Brook Road, Nashua, NH, USA 03061-0868 Tel: +1 603 885 1100 Fax: +1 603 8856061 E-Mail: [email protected]: Not Available www: Not Available

November 9 - 12, 2003, * IEEE GalliumArsenide Integrated Circuits SymposiumLocation: U.S. Grant Hotel, San Diego, CA, USAContact: William Peatman, 141 Mt. Bethel Road,Warren, NJ, USA 07059 Tel: +1 908 668 5842Fax: +1 908 412 5989 E-Mail: [email protected] Deadline: 5/5/03 www: http://www.gaa-sic.org

November 9 - 13, 2003, # IEEE InternationalConference on Computer Aided Design Loca-tion: San Jose Doubletree Hotel, San Jose, CA, USAContact: Kathy MacLennan, MP Associates, Inc,5305 Spine Road Suite A, Boulder, CO, USA80301 Tel: +1 303 530 4562 Fax: +1 303 5304-4334 E-Mail: [email protected] Deadline:4/16/03 www: http://www.iccad.com

November 17 - 18, 2003, T International Sym-posium on Electron Devices for Microwaveand Optoelectronic Applications Location:Radisson Barcelo Hotel, Orlando, FL, USA Contact:Juin Liou, ECE Department, University of Central Flori-da, Orlando, Florida, USA 32816-2450 Tel: +1407 823 5339 Fax: +1 407 407 823 5835 E-

Mail: [email protected] Deadline: 9/8/03www: http://www.edmo-symposium.org

December 3 - 6, 2003, * IEEE SemiconductorInterface Specialists Conference Location: Mar-riott Key Bridge, Arlington, VA, USA Contact: EricVogel, National Institute of Standards and Technolo-gy, 100 Bureau Drive, Stop 8123, Gaithersburg,MD, USA 20899 Tel: +1 301 975 4723 Fax: +1301 975 5668 E-Mail: [email protected] Deadline:7/14/03 www: http://www.ieeesisc.com

December 7 - 10, 2003, * IEEE InternationalElectron Devices Meeting Location: Hilton Wash-ington Towers Hotel, Washington, DC, USAContact: Phyllis Mahoney, Widerkehr & Associates,16220 South Frederick Avenue, Suite 312, Gaithers-burg, MD, USA 20877-4020 Tel: +1 301 5270900 ext. 103 Fax: +1 301 527 0994 E-Mail: [email protected] Deadline: Not Available www:http://www.ieee.org/conference/iedm

December 9 - 11, 2003, T International Confer-ence on Microelectronics Location: Nile Hilton,Cairo, Egypt Contact: Mohamed Elmasry, Universityof Waterloo, VLSI Research Group, ECE Department,Waterloo, Ontario, Canada N2L 3G1 Tel: +1 519888 4567 ext. 3753 Fax: +1 519 746 5195 E-Mail: [email protected] Deadline: 8/15/03www: www.icm03.org

December 10 - 12, 2003, T International Semi-conductor Device Research Symposium Loca-tion: Holiday Inn Georgetown, Washington, DC,USA Contact: Tom Murphy, 2363 A.V. WilliamsBldg, College Park, MD, USA 20742 Tel: +1 301405 3602 Fax: +1 301 314 9281 E-Mail:[email protected] Deadline: 9/8/02 www:http://www.ece.umd.edu/isdrs2003/

December 15 - 20, 2003, T International Work-shop on the Physics of SemiconductorDevices Location: Indian Institute of TechnologyMadras, Chennai, India Contact: S. Agarwai,IWPSD Secretary, Dept of Electrical Engineering, IITMadras, Chennai, India 600 036 Tel: +91 442578383/2578362 Fax: +91 44 2570545/2578383 E-Mail: [email protected] i tm.ernet. inDeadline: 5/31/03 www: http://www.iwpsd.net

December 16 - 18, 2003, T IEEE Conference onElectron Devices and Solid State CircuitsLocation: New World Renaissance Hotel, HongKong, China Contact: Hei Wong, City University, 83Tat Chee Avenue, Kowloon, Hong Kong Tel: +8522788 7722 Fax: +852 2788 7791 E-Mail:[email protected] Deadline: 8/15/03 www:http://www.ee.ust.hk/ieee_eds/edssc.htm

EDS Meetings Calendar(As of 26 August 2003)The complete EDS Calendar can be found at our web site:

http://www.ieee.org/organizations/society/eds/meetings_calendar.html Please visit!

EDS Meetings Calendar(As of 26 August 2003)

EEDDSS

EDITOR-IN-CHIEF

REGIONS 1-6, 7 & 9Eastern, Northeastern & SoutheasternUSA (Regions 1, 2 & 3)Murty S. PolavarapuBAE SystemsMail Stop MVA01-0169300 Wellington RoadManassas, VA 20110, USATel: +1 703 367 4197Fax: +1 703 367 3540E-Mail: [email protected]

Central USA & Canada (Regions 4 & 7)Arokia NathanDALSA/NSERC Industrial Research ChairElectrical & Computer EngineeringUniversity of WaterlooWaterloo, Ontario N2L 3GICanadaTel: +1 519 888 4803Fax: +1 519 746 6321E-Mail: [email protected]

Southwestern & Western USA (Regions 5 & 6)Sunit TyagiIntelM/S RA1 - 2045200 NE Elam Young ParkwayHillsboro, OR 97124-6497, USATel: +1 503 613 6052Fax: +1 503 613 6052E-Mail: [email protected]

Latin America (Region 9)Adelmo Ortiz-CondeUniversidad Simon BolivarApdo. 89000Caracas 1080-AVenezuelaTel: +58 212 906 4025Fax: +58 212 906 4010E-Mail: [email protected]

REGION 8Eastern Europe & The Former Soviet UnionAlexander V. GridchinNovosibirsk State Technical University20 Karl Marx ProspectNovosibirsk, 630092RussiaTel: +7 383 246 0877Fax: +7 383 246 0209E-mail: [email protected]

Scandinavia & Central EuropeAndrzej NapieralskiDept. of Microelectronics & Computer ScienceTechnical University of LodzAl. Politechniki 11, 93-590 LodzPolandTel: +48 (42) 631 26 45Fax: +48 (42) 636 03 27E-Mail: [email protected]

UK, Middle East & AfricaGady GolanHolan Academic Institute of Technology andThe Open UniversityPO Box 3932816 Klauzner St.Aviv 61392, IsraelTel: +972 54 526 122Fax: +972 3 646 5465E-Mail: [email protected]

Western EuropeChristian ZardiniLaboratoire IXLUniversite Bordeaux I351 Cours de la Liberation33405 TalenceFranceTel: +33 5 56 84 65 46Fax: +33 5 56 37 15 45E-Mail: [email protected]

REGION 10Australia, New Zealand & South AsiaWee Kiong Choi Dept. of Electrical EngineeringNational University of Singapore10 Kent Ridge CrescentSingapore 119260Tel: +65 874 6473Fax: +65 779 1103E-Mail: [email protected]

Northeast AsiaHisayo Sasaki MomoseMicroelectronics Engineering LaboratoryToshiba Corporation8, Shin-Sugita-cho, Isogo-kuYokohama, 235-8522 JapanTel: +81 45 770 3628Fax: +81 45 770 3575E-Mail: [email protected]

East AsiaHei WongCity University of Hong KongDept. of Electronic Engineering83 Tat Chee AvenueKowloon, Hong KongTel: +852 2788 7722Fax: +852 2788 7791E-Mail: [email protected]

NEWSLETTER EDITORIAL STAFF

EDITORS

Ninoslav D. StojadinovicFaculty of Electronic EngineeringUniversity of NisBeogradska 14, 18000 NisYugoslaviaTel: +381 18 529 326Fax: +381 18 46 180E-Mail: [email protected]

ELECTRON DEVICES SOCIETY IEEE ELECTRON DEVICES SOCIETY … · 2012. 2. 7. · the profile of...

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