EDN Design Ideas 2005

134
www.edn.com January 6, 2005 | edn 63 ideas design Edited by Brad Thompson L aser diodes can destroy themselves in a few nanoseconds, so testing the response and stability of a feedback- stabilized laser-diode driver can be ex- pensive. The simulator circuit in Figure 1 shows a typical laser-diode package, which contains not only the diode, which is driven by current I L , but also a photodiode. The laser diode’s front facet emits a main beam that goes to work in the outside world, and the rear facet emits a reference beam that falls on the photodiode. Although much weaker than the main beam, the reference beam’s power is di- rectly proportional to the main beam, as is the current, I P , that produces the pho- todiode. Connecting the photodiode back to the laser-diode driver via a care- fully designed amplifier completes a feedback loop that should hold the main beam power stable and con- stant. Ensuring that the laser diode nev- er sustains a destructive overload under any conditions is the tricky part. A laser diode exhibits a current thresh- old, or “knee,” below which its emission is weak and incoherent, as is photocur- rent I P . Above the knee, laser action oc- curs, and the optical output and pho- tocurrent rise linearly with increasing drive current. A simulator must reflect these charac- teristics, and the circuit in Figure 2 com- prises a basic voltage-controlled current source that presents a threshold. Based on a TO-92 or E-line-packaged PNP transis- tor and two resistors and packaged in a blob of epoxy, the simulator takes the place of the laser diode until circuit operation is stable. It’s easy to build several modules to emulate laser diodes of various ratings. In operation, the laser driver sinks cur- rent I L and develops a voltage, V S , across R 1 . When V S exceeds Q 1 ’s V BE ,Q 1 con- ducts and sources a simulated photocur- rent, I P , into the feedback-control cir- cuitry. As I L increases, I P increases linearly in proportion. As a design example, consider an av- erage laser diode with a threshold current (I TH ) of 10 mA, an operating current at full optical output (I LMAX ) of 30 mA, and a photocurrent of 100 A at full power. R 1 must then equal V BE /I TH , or 560 mV/10 mA and thus yields a value of 56 for R 1 . Then, R 2 equals ((I LMAX •R 1 )V BE )/I PMAX , or approximately 11 k. Using a value of 560 mV for V BE produces the best practi- cal relationship between I L and I P . Inverting the transistor—that is, swap- ping Q 1 ’s collector and emitter connec- tions— produces a more abrupt conduc- tion-threshold voltage of approximately 500 mV but decreases the slope of I P ver- sus I L . In this example, inverting the tran- sistor requires lowering the value of R 2 to approximately 7.5 k. The inverted-transistor circuit provides a sharper threshold and thus more real- istic simulation, even though it may re- quire some experimentation with resistor values for optimal performance. You can use almost any PNP bipolar-junction transistor for Q 1 , such as a ZTX502, and decreasing R 2 by 30% renders I P within 5% of the desired nominal value of I P . Note that laser diodes’ characteristics vary widely, even within a batch, so us- ing preferred-value resistors for R 1 and R 2 makes little practical difference in per- formance. Laser diodes exhibit a typical forward-voltage drop of about 2V, and the simulator circuit should thus drop no more voltage at full current. Also, the simulator circuit responds more slowly than a laser diode, but, if the feedback cir- cuitry operates even more slowly, as it usually does, the simulator’s slow re- sponse presents no problem. A simulator for an N-type laser diode requires an NPN transistor and reversal of connections. More complex laser diodes may require more elaborate cir- cuitry that includes current mirrors and additional connections. If adequate pow- er-supply voltage is available for current- source compliance, you can connect an LED in series with the I L lead to provide a visual indication of circuit operation. Connecting an oscilloscope across R 1 al- lows monitoring laser-drive and modu- lation currents. (In this context,“N-” and “P-type” refer not to laser-diode-device diffusions but to the polarity of the com- mon terminal.) MAIN BEAM LASER DIODE REFERENCE BEAM PHOTO DIODE I L I P COMMON V Figure 1 Laser simulator helps avoid destroyed diodes Nick Cornford, Berkhamsted, Hertfordshire, UK A P-type-laser diode assembly includes the photodiode power sensor. R 1 I L I P COMMON V R 2 Q 1 ALTERNATIVE ORIENTATION FOR Q 1 A laser-diode simulator requires only one transistor. Figure 2 Laser simulator helps avoid destroyed diodes ................................63 Differential driver doubles as versatile RF-switch driver ........................64 Pseudologarithmic thermistor signal conditioning spans wide temperature range ..............................66 RF telemetry transmitter features minimal parts count ......................................68 Publish your Design Idea in EDN. See the What’s Up section at www.edn.com. The best of design ideas 8 Check it out at: www.edn.com

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Collector of EDN Design Ideas 2005

Transcript of EDN Design Ideas 2005

  • www.edn.com January 6, 2005 | edn 63

    ideasdesignEdited by Brad Thompson

    Laser diodes can destroy themselvesin a few nanoseconds, so testing theresponse and stability of a feedback-stabilized laser-diode driver can be ex-pensive. The simulator circuit in Figure1 shows a typical laser-diode package,which contains not only the diode, whichis driven by current I

    L, but also a

    photodiode. The laser diodes frontfacet emits a main beam that goes towork in the outside world, and the rearfacet emits a reference beam that falls onthe photodiode.

    Although much weaker than the mainbeam, the reference beams power is di-rectly proportional to the main beam, asis the current, I

    P, that produces the pho-

    todiode. Connecting the photodiodeback to the laser-diode driver via a care-fully designed amplifier completes afeedback loop that should hold themain beam power stable and con-stant. Ensuring that the laser diode nev-er sustains a destructive overload underany conditions is the tricky part.

    A laser diode exhibits a current thresh-old, or knee, below which its emissionis weak and incoherent, as is photocur-rent I

    P. Above the knee, laser action oc-

    curs, and the optical output and pho-tocurrent rise linearly with increasingdrive current.

    A simulator must reflect these charac-teristics, and the circuit in Figure 2 com-

    prises a basic voltage-controlled currentsource that presents a threshold. Based ona TO-92 or E-line-packaged PNP transis-tor and two resistors and packaged in ablob of epoxy, the simulator takes the placeof the laser diode until circuit operationis stable. Its easy to build several modulesto emulate laser diodes of various ratings.

    In operation, the laser driver sinks cur-rent I

    Land develops a voltage, V

    S, across

    R1. When V

    Sexceeds Q

    1s V

    BE, Q

    1con-

    ducts and sources a simulated photocur-rent, I

    P, into the feedback-control cir-

    cuitry. As IL increases, I

    Pincreases linearly

    in proportion.As a design example, consider an av-

    erage laser diode with a threshold current(I

    TH) of 10 mA, an operating current at

    full optical output (ILMAX

    ) of 30 mA, anda photocurrent of 100 A at full power.R

    1must then equal V

    BE/I

    TH,or 560 mV/10

    mA and thus yields a value of 56 for R1.

    Then, R2

    equals ((ILMAX

    R1)V

    BE)/I

    PMAX,

    or approximately 11 k. Using a value of

    560 mV for VBE

    produces the best practi-cal relationship between I

    L and I

    P.

    Inverting the transistorthat is, swap-ping Q

    1s collector and emitter connec-

    tions produces a more abrupt conduc-tion-threshold voltage of approximately500 mV but decreases the slope of I

    P ver-

    susIL. In this example, inverting the tran-

    sistor requires lowering the value of R2

    to approximately 7.5 k.The inverted-transistor circuit provides

    a sharper threshold and thus more real-istic simulation, even though it may re-quire some experimentation with resistorvalues for optimal performance. You canuse almost any PNP bipolar-junctiontransistor for Q

    1, such as a ZTX502, and

    decreasing R2

    by 30% renders IP

    within5% of the desired nominal value of I

    P.

    Note that laser diodes characteristicsvary widely, even within a batch, so us-ing preferred-value resistors for R

    1and R

    2

    makes little practical difference in per-formance. Laser diodes exhibit a typicalforward-voltage drop of about 2V, andthe simulator circuit should thus drop nomore voltage at full current. Also, thesimulator circuit responds more slowlythan a laser diode, but, if the feedback cir-cuitry operates even more slowly, as itusually does, the simulators slow re-sponse presents no problem.

    A simulator for an N-type laser dioderequires an NPN transistor and reversalof connections. More complex laserdiodes may require more elaborate cir-cuitry that includes current mirrors andadditional connections. If adequate pow-er-supply voltage is available for current-source compliance, you can connect anLED in series with the I

    Llead to provide

    a visual indication of circuit operation.Connecting an oscilloscope across R

    1 al-

    lows monitoring laser-drive and modu-lation currents. (In this context,N-andP-type refer not to laser-diode-devicediffusions but to the polarity of the com-mon terminal.)

    MAINBEAM

    LASERDIODE

    REFERENCEBEAM

    PHOTODIODE

    IL IP

    COMMON V

    F igure 1

    Laser simulator helps avoid destroyed diodesNick Cornford, Berkhamsted, Hertfordshire, UK

    A P-type-laser diode assembly includes thephotodiode power sensor.

    R1

    IL IP

    COMMON V

    R2

    Q1

    ALTERNATIVEORIENTATION

    FOR Q1

    A laser-diode simulatorrequires only one transistor.

    F igure 2

    Laser simulator helps avoid destroyed diodes ................................63

    Differential driver doubles as versatile RF-switch driver ........................64

    Pseudologarithmic thermistor signal conditioning spans wide temperature range ..............................66

    RF telemetry transmitter features minimal parts count ......................................68

    Publish your Design Idea in EDN. See theWhats Up section at www.edn.com.

    The best ofdesign ideas Check it out at:www.edn.com

  • 64 edn | January 6, 2005 www.edn.com

    ideasdesign

    Designed as a high-speed driver for12-bit ADCs, the AD8137 controlsSPDT GaAs (gallium-arsenide)FET-MMIC (microwave-monolithic-IC)and PIN-diode RF switches and thus pro-vides a low-cost and versatile alternativeto conventional switch drivers. This cir-cuit achieves typical switching speeds ofapproximately 7 to 11 nsec, including thepropagation delays of the driver and RFload.

    The GaAsFET-driver circuit(Figure 1) converts a single-end-ed, 0 to 3.5V TTL signal into a comple-mentary, 0 to 4V differential-outputsignal. The divider formed by the 50source impedance, R

    S, and the input ter-

    mination, RT, imposes a 50% signal re-

    duction. To compensate, the circuit am-plifies its input by approximately 2.3times to yield the proper output ampli-tude of 4V p-p. The circuit also shifts theoutput level by 2V to provide the prop-er GaAsFET bias. Equation 1 determinesthe output voltage:

    For a symmetrical output swing, gain-setting resistors R

    1and R

    4must present

    the same Thevenin-equivalent resistance.In Figure 1, R

    4increases by 20 over R

    1.

    This increase compensates for the factthat source resistor R

    S and termination

    resistor RT

    combine in parallel to intro-duce additional resistance of 25. SettingR

    4to 1.02 k (the closest standard value

    to 1.025 k) ensures that the circuit willprovide approximately equal gains at thedifferential outputs.

    The AD8137s VOCM

    input (Pin 2) of-fers a convenient method of shifting theoutputs dc common-mode level. In Fig-ure 1, R

    2and R

    3form a voltage divider,

    which sets the dc output level to 2V.Connecting the AD8137s inverting inputto a reference voltage of 1.75V establish-es the midpoint of the input signal andallows for proper switching of theAD8137s input stage.

    Figure 2 shows the GaAs FET driversturn-on switching speed of approximate-ly 5 nsec for isolation to insertion lossthat is, 50% of the TTL input to 90% de-tected RF. Figure 3 shows turn-offswitching speed of approximately 11 nsecfor insertion loss to isolationthat is,50% of the TTL input to 10% detected RF.

    As Figure 4 shows, with only minormodifications, the GaAs switch-drivercircuit can drive PIN-diode loads that re-quire both positive and negative bias cur-rents. IC

    1s V

    OCMinput connects to

    ground to provide symmetrical outputsof 63.5V about ground and sinks andsources 10 mA of bias current. Altering

    A1/B2

    A2/B1

    C510 pF

    C610 pF

    C915 pF

    C815 pF

    C715 pF

    MASW20000IC2

    RF

    RF2

    RF1

    RF SECTION

    _

    + 5

    PULSE GENERATOR

    RS50

    R11k

    R23k

    R32k

    RT50

    C30.1 F

    5VC12.2 F

    82

    1

    3

    46

    R52.32k

    C22.2 F

    5V

    5V

    R62.32kR4

    1.02k

    C40.1 F

    IC1

    VREF

    AD8137

    F igure 1

    Differential driver doubles as versatile RF-switch driver John Ardizzoni, Analog Devices, Wilmington, MA

    ADC IC1 converts TTL levels todifferential-control signals forGaAs RF switch IC2.

    Vertical cursors denote GaAs switch turn-ontime of approximately 5 nsec.

    F igure 2 Turn-off time is approximately 11 nsec.F igure 3

    (1)

  • 66 edn | January 6, 2005 www.edn.com

    ideasdesign

    feedback resistors R3

    and R4

    to 2 kV pro-vides an output swing of 63.5V. ResistorsR

    5and R

    6set the steady-state PIN-diode

    current, ISS

    , as Equation 2 shows:

    Capacitors C5

    and C6

    set the spikingcurrent I

    S, which removes stored charge

    in the PIN diodes. You can optimize agiven diode switchs responsetime by using the AD8137s out-put slew rate for dV/dt and Equation 3,

    to calculate spiking current.

    _

    + 5

    PULSE GENERATOR

    RS50

    R11k

    RT50

    C30.1 F

    5VC12.2 F

    82

    1

    3

    46

    R32k

    C22.2 F

    VO

    VO

    5V

    R42kR2

    1.02k

    C522 pF

    R6280

    VD

    VD

    R5280

    C622 pF

    C40.1 F

    IC1

    VREF1.75V

    TO PINDIODESAD8137

    F igure 4

    A few modifications convertthe circuit in Figure 1 into aPIN-diode switch driver.

    Given its low cost, small size, ro-bust construction, accuracy, versa-tility and sensitivity, its no wonderthat the thermistor rates as one of themost popular temperature sensors avail-able. However, in some applications, athermistor can exhibit too much sensi-tivity for wide-range temperature meas-urements. For example, when you com-bine a thermistors radically nonlinearexponential resistance-versus-tempera-ture-response curve with a linear signalconditioner (Reference 1), the resultantgraph resembles a difficult-to-character-ize response, as Trace A shows (Figure 1).

    Note that most of the thermistors re-

    sistance range crowdsinto a small spanof temperatures atthe lower limit of therange. As Curve B in Fig-ure 1 shows, the changeof resistance per degreeof temperature changelooks exaggerated at lowtemperatures.As temper-ature increases, the reso-lution diminishes andmay become inadequateat the upper end of thetemperature scale.

    In contrast, the signal-conditioning circuit inFigure 2 mitigates thethermistors inherent nonlinearity bygenerating a compensating, pseudologa-rithmic response function thats Curve Cin Figure 1 represents. The followingequation relates the circuits 10V out-put span for an ADC 10V input span tothermistor resistance: Thermistor resist-anceR

    4(V

    O10)/(102V

    O).

    Curve D in Figure 1 shows the result-ant resolution curve. Maximum resolu-tion occurs at a temperature that corre-sponds to a thermistor resistance equal toR

    4and an output voltage of 0V. Although

    selection of this value optimizes resolu-tion in the middle of the measurementrange, the thermistors nominal resist-ance is relatively noncritical.You can alsoselect a different value of reference volt-age, V

    REF, to shift the 10V output span

    to meet other requirements. For best per-formance, you can share the same refer-ence source for V

    REFand for the meas-

    urement systems ADC, which makesmeasurements ratiometric and thus in-sensitive to reference-voltage drift.

    In addition to resolution, span, and

    TEMPERATURE

    BLINEAR-RESOLUTION CURVE

    ARUST

    CUR

    VES

    A AN

    D C

    RES

    ISTA

    NCE

    CPSUEDOLOGARITHMIC

    RESPONSE

    DPSUEDOLOGARITHMIC

    RESOLUTION

    Pseudologarithmic thermistor signal conditioningspans wide temperature rangeStephen Woodward, University of North Carolina, Chapel Hill, NC

    These resistance-versus-tem-perature curves highlight the improved resolu-tion available in a pseudologarithmic circuit.

    +

    IC1

    R333.2k1%

    R424.9k1%

    R124.9k1%

    C10.1 F

    C20.1 F

    VREF2.5V

    R2100k1%

    THERMISTOR

    F igure 2

    This pseudologarithmic thermistor signal conditioner uses a sin-gle operational amplifier and a few passive components.

    F igure 1

    (2)

    (3),

  • 68 edn | January 6, 2005 www.edn.com

    ideasdesign

    reference-drift considerations, thermis-torsand, for that matter, all tempera-ture sensorsexperience self-heating ef-fects. The excitation current producesohmic power that causes these effects.The limited thermal mass of miniaturethermistors provides limited heat dissi-pationoften only a few microwatts per

    degreeand that dissipation can pro-duce especially severe temperature shifts.

    In the circuit in Figure 2, the powerdissipated due to thermistors self-heat-ing reaches a maximum at midspanthat is, when output voltage is 0V andequals: V

    REF2/(4R

    4)63 W for the

    component values illustrated. For all but

    the smallest thermistors, this level of self-heating produces acceptably low frac-tional-degree errors.

    Reference1. Woodward, Steve,Optimize linear-

    sensor resolution, EDN, March 7, 2002,pg 131.

    Requirements for portable, short-range telemetry systems frequentlyinclude low power consumption,small size, and low cost. The circuit in Fig-ure 1 meets these criteria and uses onlythree off-the-shelf ICs and a few passivecomponents. Although dedicated to con-ditioning the low-level signal a strain-gauge bridge produces, the circuit can op-erate with almost any resistive transducerbased on a Wheatstone bridge. The circuitcomprises a VFC (voltage-to-frequencyconverter) that produces a PPM (pulse-position-modulation) output, and anOOK (on/off-keyed) RF transmitter.Based on direct digitization, the VFC inFigure 1 comprises IC

    1, IC

    2, IC

    3A, and

    IC3B

    . A Wheatstone bridge containingstrain gauge R

    Xproduces an output of ap-

    proximately 5 mV. An integrator stagecomprising C

    6and IC

    1, a Linear Technol-

    ogy LTC1250 offset-compensated, low-

    drift operational amplifier, connects di-rectly across the bridge. (Note that the val-ue of the remaining resistors in the bridgedepends on the application.)

    To yield a ratiometric conversion, thevoltage applied to the bridge, V

    COMP,

    varies with power-supply voltage andequals the difference between the twothreshold voltages of a Schmitt-triggercircuit. In Figure 1, the Schmitt triggercomprises a Maxim MAX9075 compara-tor, IC

    2; a CMOS inverter, IC

    3A; and the

    positive feedback network comprising R1,

    R2, and C

    1. Equations 1 and 2 define the

    Schmitt triggers high, VTH

    , and low, VTL

    ,threshold voltages:

    To understand the circuits operation,assume that the comparators output ishigh and, consequently, the inverters out-put is low. Also assume that the seriescombination of the strain gauge, R

    X, and

    the trimmer, RT, is always equivalent to

    R(1X)R. That is, for linear operation,the sensors resistance variation representsa small fraction of the arm resistance.

    Under these conditions, the nonin-verting input of IC

    1biases to V

    DD/2, and

    the Wheatstone bridges active arm drivesa positive current, I

    I, into the summing

    node of IC1. This current causes the in-

    tegrators output, VOI

    ,to ramp down to-ward the low threshold voltage, V

    TL, of

    the Schmitt trigger.When V

    OIV

    TL, the comparators out-

    put goes to zero, and the inverters out-put consequently rises to V

    DD. This ac-

    tion inverts the direction of theintegrators input current, causing the in-

    +_

    R

    RX

    RT

    R

    R

    IC1IC3A IC3B

    IC3C

    VCOMP

    R1100k

    C66.8 nF

    VINV

    C115 pF

    VOI

    R2

    VCOMP

    R3330

    C2100 pF

    R4

    PPMOUT

    VINV

    VDD

    VPPM C318 pF

    C418 pF

    C51 nF

    VDD4V

    SPIRALANTENNA

    L180 nH

    _

    +

    +IC2_

    RF-telemetry transmitter features minimal parts countFrancis Rodes, Eliane Garnier, and Olivier Chevalerias, ENSEIRB Talence, France

    Thise RF-telemetry transmitter and strain-gauge amplifier use only three ICs.

    (1)

    (2)

    F igure 1

  • 70 edn | January 6, 2005 www.edn.com

    ideasdesign

    tegrators output to ramp up-ward to the Schmitt triggershigh threshold voltage. Final-ly, when V

    OI= V

    TH, the com-

    parators output goes high,and the above sequence re-peats indefinitely, producing afree-running oscillation inwhich the integrators outputramps up and down betweenthe threshold voltages of theSchmitt trigger (Trace 1 inFigure 2). Meanwhile, thecomparators output andthe inverters output delivertwo square waves with a 50%-duty-cycle ratio (traces 2 and3, respectively, in Figure 2)that drive the bridge.

    To produce the PPM signal (Trace 4 inFigure 2), the inverters output drives amonostable circuit comprising a secondinverter, IC

    3B, and timing components R

    4

    and C2, which produces a 15-sec-wide

    pulse. Current-limiting resistor R3

    pre-vents latch-up of IC

    3, and R

    2and C

    4 set

    the output-pulse width.To model the VFCs transfer function,

    calculate period TX

    of the comparatorsoutput. Due to the symmetry of IC

    1s

    output, this period is twice the time theintegrators output takes to ramp linear-ly between the two threshold voltages ofthe Schmitt trigger. Consequently, youcan express t

    Xas in Equation 3:

    where dVOI

    /dt is the slope of the ramp atthe integrators output. Assuming thatthe integrators input current is constantduring one period, Equation 4 gives theslope:

    After applying a Thevenin transfor-mation of the bridges active arm, you canexpress the integrators input current as

    Replacing VTL

    , VTH

    , and dVOI

    /dt in Equa-tion 3 with the respective expressions

    from equations 1, 2, and 4 finally yieldsthe frequency in Equation 6.

    Knowing that X1, you can approxi-mate the PPMs output frequency byEquation 7:

    This transfer function highlights theVFCs three most important features: thatthe modulation frequency, f

    X, is directly

    proportional to the relative variation ofthe bridges sensor resistance, R

    X; that the

    modulation frequency is independent ofthe power-supply, V

    DD; and, therefore,

    that this PPM converter is ratiometric.This feature is attractive for any portable-system application in which the supplyvoltage decreases as the battery ages. Themodulation frequency is independent ofthe PPM pulse width, which eliminatesthe source of error you typically en-counter with single-slope VFCs.

    Using the components values shown inFigure 1, the converters frequency spanis: 200 HzF

    X600 Hz for a relative vari-

    ation of the strain-gauge resist-ance:4.2103R/R4.2103.Consequently, with zero force applied tothe strain gauge, R/R0, and the con-verter produces a 400-Hz modulationfrequency. The waveforms in Figure 2correspond to this case.

    To transmit data over a distance of afew meters, the PPM signal modulates an

    80-MHz OOK RF transmit-ter. This transmitter com-prises an interruptible Col-pitts oscillator based on avery-high-speed CMOSNOR gate, IC

    3C; a 74VHC-

    02; and a tank circuit com-prising two identical feed-back capacitors, C

    3and C

    4;

    and a square-spiral pc in-ductor, L. To obtain reliableoscillation start-up, setC

    3C

    4C. Neglecting the

    effects of stray capacitances,you can calculate the outputfrequency of the Colpitts os-cillator via Equation 8:

    The values of L, C3, and C

    4shown in

    Figure 1 produce a carrier frequency, fC,

    of approximately 80 MHz. Inductor L1

    also doubles as the transmitters antenna,and its characteristics of eight turns in an88-mm pc-board footprint stem froma process that ensures that the transmit-ters radiated power never exceeds 250nW at 80 MHz.

    According to European Telecommuni-cation Standard I-ETS 300 220, the trans-mitter requires no license and can oper-ate at any carrier frequency within the 74-to 87.5-MHz band. Consult applicableregulations for unlicensed transmitteroperation in your locality.

    At a transmitted power of less than 250nW, an AM receiver with a tangential sen-sitivity of 1 V provides a receptionrange as long as 10m, which is sufficientfor many indoor-telemetry applications.At a maximum PPM frequency of 600Hz, the current drain of the circuit in Fig-ure 1 is approximately 2 mA at a supplyvoltage of 4V.

    References1. Williams, Jim, Circuits allow direct

    digitization of low- level transducer out-puts, EDN, Nov 29, 1984, pg 183.

    2. Williams, Jim, Digitize transduceroutputs directly at the source, EDN, Jan10, 1985, pg 201.

    This oscilloscope photo shows circuits internal waveforms:Trace 1 is the integrators output voltage, Trace 2 is the comparators out-put voltage, Trace 3 is the inverters output voltage, and Trace 4 is thePPM-output voltage.

    F igure 2

    TRACE 1

    TRACE 2

    TRACE 3

    TRACE 4

    CHANNEL 1 HIGH2.655V

    CHANNEL 1 LOW1.721V

    CHANNEL 1 FREQUENCY404.9VLOW SIGNAL AMPLITUDE

    CHANNEL 4 + WIDTH15.92 SECLOW SIGNAL AMPLITUDE

    (3)

    (4)

    (5)

    (6)

    (7)

    (8)

  • www.edn.com January 20, 2005 | edn 79

    ideasdesign

    Texas Instruments BQ2010 battery-gas-gauge IC offers a convenientmethod for recording availablecharge stored in a nickel-cadmium ornickel-metal-hydride battery. However,even though plenty of charge remainsavailable, under certain circumstances,transient-current spikes can fool theBQ2010 into registering a discharged bat-tery. For example, spikes can occur whenyou connect a heating element or aswitched-mode regulator containing ahigh-value input capacitor, or if you mo-mentarily short-circuit the batterys ter-

    minals while making a connection.During a current spike, the battery

    voltage decreases by the voltage dropacross the batterys internal resistanceplus the voltage drop across the circuitscurrent-sense resistor. The BQ2010 mis-interprets the voltage decrease as a low-cell voltage condition normally seen dur-ing discharge. The device then loses dataon the remaining battery capacity, and,depending on the application, of theBQ2010s Empty output, the load mayinadvertently disconnect. Finally, the bat-tery must contain a partial charge to un-

    Enhanced battery gas gauge keeps its data through glitchesHerbert Seidenberg, Costa Mesa, CA

    Edited by Brad Thompson

    IC4LT1790

    VIN VOUT

    GND

    VOLTAGEREGULATOR

    VBATTERY

    VINT

    VBATTERY

    VBATTERY

    VLOAD

    VCC

    VINT

    PROGRAMMINGRESISTORS

    DISP

    SB

    SR

    LCOM

    GND

    EMPTY

    IC1BQ2010

    GAS-GAUGE IC

    EMPTY

    ON

    VOLTAGE SENSE

    CURRENT SENSE

    LCOM

    LCOM

    LED DISPLAY

    RESISTORNETWORK

    CURRENTCOMPENSATION

    CURRENT SENSE

    CURRENTCOMP

    R7

    R6

    R40.1

    R36

    VOLTAGE SENSE

    VBATTERY

    VBATTERY

    LOGIC

    TIMERON

    VLOAD

    VLOAD

    EMPTY

    S1

    S2

    IC5LTC1477

    D6

    VLOADJ1

    ON/OFF

    HIGH-SIDESWITCH

    +BATTERY

    CURRENT SENSE

    +

    TO LOAD

    IC3BTLC2262_

    +

    ON

    OFF

    F igure 1

    This circuit improves the BQ2010s current-spike immunity in several ways and adds several useful features.

    Enhanced battery gas gauge keeps its data through glitches ..................79

    Charge pump converts 5V to 5V ..........82

    JFETs offer LC oscillators with few components....................................82

    Autostart circuit helps ATX motherboards resume operationafter power interruptions..............................86

    Publish your Design Idea in EDN. See theWhats Up section at www.edn.com.

  • 80 edn | January 20, 2005 www.edn.com

    ideasdesign

    latch the BQ2010s Empty output.The circuit in Figure 1 improves the

    BQ2010s current-spike immunity inseveral ways and adds several useful fea-tures. First, a 3.3V, current-limited low-dropout voltage regulator, IC

    4, supplies

    power to IC1, the BQ2010. Second, an

    LTC1477 short-circuit-protected, high-side FET switch, IC

    5, limits battery-to-

    load current to a maximum of 2A. Toprevent IC

    1s SB (single-cell voltage)

    monitor pin from sensing an invalidEmpty state, current-compensation am-plifier IC

    3Bmakes the voltage to the SB

    pin current-independent. The negativerail of IC

    3Bconnects to the active side of

    the ground-referenced current-sense re-sistor, R

    4. With no load current, op amp

    IC3B

    s output should rest at 0V, but few

    rail-to-rail op amps provide outputs thatgo to 0V. The solution is to bias the pos-itive side of the op amp enough to set theoutput above V

    OL and compensate by

    lowering the gas-gauge-voltage sense-re-sistor ratio.

    Additional features include a short-circuited load shutoff to prevent IC

    5from

    going into thermal-protection mode(Figure 2). Also, the entire circuit shutsoff when the battery provides no currentto the load or when the battery is dis-charged.A timer circuit consisting of IC

    7,

    IC8

    and IC9

    provides an additional shut-off option. You can set the turnoff delayfrom minutes to days by changing R

    33

    and C7

    to reduce the clock frequency, orby selecting other taps on binary ripplecounters IC

    8and IC

    9. Pressing switch S

    2

    or starting a recharging cycle turns thecontroller back on. The parallel-con-nected sections of Schottky diode D

    6pro-

    vide a current path for recharging thebattery.

    Although the resistor values shown inFigure 2 apply to a specific application,you can customize the circuit for a bat-terys chemistry, capacity, internal resist-ance, cell count, and timer and displayoptions. You can calculate componentvalues via a Microsoft Excel 2002 spread-sheet in the Web version of this DesignIdea at www.edn.com. All of the circuitslow-profile, surface-mounted compo-nents fit on one side of a 1.8-sq-in., four-layer board. The switches and LEDreadout connect to the pc boards un-derside.

    14 3 1 2

    5

    4

    6

    8

    12

    9

    ASTABLE

    TRIGGER+ TRIGGER

    RETRIGGER

    RESET

    R3324.9k

    VSS

    OUT

    OUT

    OSC OFF

    11

    13

    10 CLOCK

    C70.047 F

    VCC COM RC EXT C EXT R

    7

    9765

    4

    32

    131214151

    9765

    4

    32

    131214151

    RESET

    INPUT

    VDD

    10

    VSSCD4040B8 8

    Q5

    Q2Q3Q4

    Q6Q7

    Q10Q9Q8

    Q12Q11

    Q1

    VLOAD

    16

    10CLOCK

    TIMER

    11

    CD4040B

    TIME- OUT

    VLOAD

    7CD4002B

    3452

    9101112

    EMPTY

    7

    VLOAD

    VLOAD

    ON

    S2

    VBATTERY

    VLOAD LOGIC

    13

    R34100k

    VLOAD

    16

    INPUT

    RESET

    Q5

    Q2Q3Q4

    Q6Q7

    Q10Q9Q8

    Q12Q11

    Q1VDD

    VSS

    IC8 IC9

    R32100k

    IC7CD4047B

    ASTABLE

    R35100k

    R30100k

    ON

    14

    3

    VLOADVLOAD VBATTERY

    21C5

    0.1 FC6

    0.1 F

    IC2B

    CD4002B

    J1

    OUTPUTCONNECTOR

    CURRENTCOMPENSATION

    VBATTERY

    CURRENT SENSE

    CURRENT SENSE

    CURRENT SENSE

    R2010.5k

    R25499k

    5

    6

    R23100k

    R2471.5k

    IC3B

    TLC2262

    4

    IC2A

    21

    VIN1

    VIN3

    VIN2

    VINS

    VOUT1

    VOUT2

    EN GND

    4+

    +

    VLOADVBATSWITCH

    IC5LTC1477

    D620CJQ030

    C210 FC3

    10 F

    ON/OFF

    5

    8

    12

    3

    7

    6

    NOTE: IC3A IS UNUSED.

    D7BAV74

    11

    VLOAD

    8

    21

    3

    CON2

    VLOAD

    14

    CURRENTCOMPENSATION

    _

    +_+

    You can customize this circuit for a batterys chemistry, capacity, internal resistance, cell count, and timer and displayoptions.F igure 2

  • 82 edn | January 20, 2005 www.edn.com

    ideasdesign

    Versatile switched-capacitorcharge-pump voltage converterscan provide a negative supply volt-age from a positive-voltage source ordouble a positive sources voltage. How-ever, certain applications that consist en-tirely of ECL (emitter-coupled-logic)circuits provide only a negative-voltagesupplyfor example, 5.2V. Figure 1shows how you can use a switched-capacitor converter to obtain a pos-itive power-supply voltage suitable forpowering ECL-to-TTL (transistor-to-transistor-logic)-level translators andother circuits.

    Although connections to IC1

    may ap-pear to be reversed, the bilateral charac-teristics of IC

    1s internal switches allow

    use of IC1s output pin as its power in-

    put. Capacitor C1

    acquires a chargewhen IC

    1s internal switches connect the

    CAP pin to ground and CAP to thenegative-voltage power source via theoutput pin, OUT. During the next half-cycle, IC

    1connects CAP to

    ground and CAP to IN(normally used as the input), transfer-ring C

    1s positive charge to output ca-

    pacitor C3

    and the load. With FSEL con-nected to OUT, an internal oscillator setsthe charge-discharge cycles frequency toapproximately 1 MHz.

    As Figure 2 shows, IC1s switches pres-

    ent internal resistances that affect theoutput voltages magnitude, which is

    lower than the input voltage and subjectto less-than-ideal regulation as output-load current increases. For optimum

    performance, use low-ESR capacitorsfor C

    1,and input and output bypass ca-

    pacitors C2

    and C3.

    INOUT

    LV

    FSEL

    SHDN

    IC1MAX1681

    CAP+

    CAP

    VOUT4 TO 5.5V

    VIN4 TO 5.5V

    C11 F

    C31 F

    C21 F

    8

    2

    4

    5

    6

    1

    7

    3 GNDF igure 1

    OUTPUTVOLTAGE

    (V)

    0 20 40 60 80 100 120 1403.8

    4

    4.2

    4.4

    4.6

    4.8

    5

    5.2VIN=5V

    F igure 2

    Charge pump converts 5V to 5VKen Yang, Maxim Integrated Products Inc, Sunnyvale, CA

    The backwards switched-capacitor converter converts 5V to 5V.

    This load-voltage-versus-current graph shows the effects of the converters nonzero output imped-ance on output regulation.

    JFETs offer LC oscillators with few componentsHerminio Martnez, Joan Domingo, Juan Gmiz, and Antoni Grau,Technical University of Catalonia, Barcelona, Spain

    By using JFETs in unusual configu-rations, you can design simple,high-frequency LC oscillators withfew passive components. The structurefor implementing the amplifier stagecomprises a JFET transistor that you con-figure as a common drain (Figure 1).

    When the JFET transistor works in thesaturation zone, the drain current, I

    D, is:

    where IDSS

    is the maximum saturationcurrent and V

    Pis the pinch-off voltage.

    You can model the JFET in this satura-

    tion zone in the small-signal regime us-ing an infinite input impedance and acurrent source that the gate-source volt-age controls. The following equation de-termines the small-signal transconduc-tance of the transistor:

  • 84 edn | January 20, 2005 www.edn.com

    ideasdesign

    VIN (t)VOUT (t)

    VDD

    RG RS

    Q1

    F igure 1

    You can configure an amplifier stage, based ona JFET transistor, as a common drain.

    To complete the oscillator circuit, you add anLC-resonant tank to the amplifier stage; theresult is a Colpitts oscillator.

    VOUT (t)

    VDD

    C2

    L3

    C1

    RS

    Q1

    F igure 2

    You can develop a Hartley oscillator based ona JFET transistor.

    VOUT (t)

    VDD

    L2

    C3

    L1

    RS

    Q1

    F igure 3

    Gate resistance RG

    provides the neces-sary connection from the gate to ground.Its typical value is in the low-megaohmrange to provide the needed high imped-ance of the amplifier structure. Resis-tance R

    Sbiases the transistor; the

    following equation determines re-sistance:

    To complete the oscillator circuit, youadd an LC-resonant tank to the amplifierstage (Figure 2); the result is a Colpitts os-cillator. The connection from the gate toground for dc exists because of the induc-tance of the LC-resonant tank, removingthe gate resistance of the amplifier.

    Analyzing the circuit using theBarkhausen criterion, the frequency ofoscillation f

    Oof the circuit is:

    The necessary condition on the capac-itors so that the circuit can oscillate is:

    or, equivalently, the voltage gain, AV, of

    the amplifier stage, VOUT

    (t)/VG(t), is:

    where voltage gain of the common drainstage is:

    which demonstrates that the voltage gainin always lower than one.

    Similarly, you can develop a Hartleyoscillator based on a JFET transistor (Fig-ure 3). The simulation and experimen-tal results for the Colpitts oscillator cir-cuit uses a 2N3819, an n-channel device,for the JFET. The PSpice parameters forthis transistor are I

    DSSof 12 mA and V

    P

    of 3V. Simulation shows the voltagegain of the amplifier circuit is 0.3064V,and, with C

    1 having a value of 50 nF and

    C2

    having a value of 114 nF, then

    and the circuit oscillates (Figure 4),which also shows the start-up process ofthe oscillator. The voltage gain also showsthat the design meets the start-up con-

    ditions on the capacitors:

    Note that transconductance of thetransistor is equal to the value of the slopeof the curve i

    Df(V

    GS) at this operating

    point. Depending on this point, the ac-tual value of the transconductance will belarger or smaller. Confirming this value,when oscillations start up, the curveiDf(V

    GS) restricts the amplitude of the

    output signal due to the reduction of thetransconductance when V

    GSdecreases to

    values close to the pinch-off voltage; inthis zone of the curve, its slope and, there-fore, the transconductance is smaller. Theintrinsic nonlinearity of the JFET tran-sistor limits the gain of the amplifierstage, and no additional circuit stabiliz-ing the amplitude of the output signal isnecessary.

    With C1 having a value of 50 nF and C2 having a value of 114 nF, the circuit oscillates.

    F igure 4

    ,

    TIME(nSEC)

    VOUT(V)

  • 86 edn | January 20, 2005 www.edn.com

    ideasdesign

    Unlike legacy PC motherboards, anATX-style motherboard controls itspower supplys on/off state. If acpower fails, many ATX motherboards donot automatically restart when power re-turns, and that behavior is unacceptablefor a server system that must providenear-continuous service. Although somePCs provide BIOS configuration selec-tions for wake-on-LAN or wake-on-modemoperation, these options dependon another computer to provide thewake-up call. A few ATX motherboardchip sets offer an always-onBIOS option, but chances are, themotherboard thats available foryour server system isnt one ofthese.

    The circuit design in Figure 1offers a reliable method of recov-ery from a power interruption.Upon restoration of ac power, anATX power supply delivers astandby voltage of 5V dc at amaximum of 10 mA via Pin 9 ofits power connector (Figure2). With standby power avail-able, low-power CMOS timer

    TLC555 CP IC1

    functions as an astableoscillator and delivers pulses at approxi-mately 4-sec intervals to MOSFET-out-put optoisolator IC

    2. The output of IC

    2

    connects in parallel with the PCs front-panel power-on switch and in effectpushes the power switch every 4 sec.

    In most astable-oscillator designsbased on the generic 555 timer, timingcapacitor C

    3connects from pins 2 and 6

    to ground. Upon initial application ofpower, IC

    1s output goes low, activating

    IC2

    and generating an immediate pow-

    er-on signal. Depending on the mother-boards design, an immediate start-upsignal may cause the motherboard to lockup. Connecting C

    3as shown eliminates

    the initial start-up pulse.When the power supply switches on,

    primary 5V power becomes available atpins 4, 6, 19, and 20, driving diode D

    1

    into conduction and biasing Pin 7 of IC1

    to a level that stops oscillation. AlthoughIC

    1s output (Pin 3) can directly drive a

    motherboards power-on input, MOS-FET-output optoisolator IC

    2removes the

    need to trace the polarity of thepower-on switchs connections. Inaddition, IC

    2eliminates any pos-

    sibility of incompatible logic lev-els that some 3.3V motherboards impose.

    You can assemble the start-upcircuit on a small section of proto-typing board and splice its con-nections into the power supplyswiring harness and power-onpushbutton wiring. Variants ofATX connectors exist, so verifywiring before connecting the start-up circuit.

    IC1TLC555CP

    IC2HSR312LRST

    DIS

    VCC

    OUT

    GND CON

    1 6

    R3820

    C20.1 F

    C40.1 F

    C3100 F

    D11N4148

    C1100 F

    R222.1k1%

    R122.1k1%

    THRES

    TRIG

    4

    7

    6

    2

    5VSB

    8

    +

    5VSB+

    PIN 9PURPLE

    WIRE

    21

    PIN 4, 6,19, OR 20RED WIRE

    ASTABLE MODE: 2.7 SECONDS ON1.3 SECONDS OFF

    3 1

    2

    3

    PIN 3, 5, 7,13, 15, 16, OR 17

    BLACK WIRE

    5V

    COM

    6

    5

    4 MB2

    MB1

    PB2

    PB1 FROM CHASSISPOWER PUSHBUTTONSWITCH

    TO MOTHERBOARDPOWER PUSHBUTTONSWITCH

    F igure 1

    Autostart circuit helps ATX motherboards resumeoperation after power interruptionsWilliam Mohat , Ameritech, Cleveland, OH

    An inexpensive CMOS 555 timer generates power-on-switch closures upon restoration of ac power.

    This view of an ATX power supplys connec-tor shows color codes. Pinouts may differ

    slightly from manufacturer to manufacturer.

    ORANGEBLUEBLACKGREENBLACKBLACKBLACKWHITEREDRED

    3.3V12VCOM/PS_ONCOMCOMCOM5V5V5V

    ORANGEORANGEBLACKREDBLACKREDBLACKGRAYPURPLEYELLOW

    3.3V3.3VCOM5VCOM5VCOMPWR_OK5VSB12V

    12345678910

    11121314151617181920

    NOTES: 5VSB = 10 mA MAXIMUM. SHORT /PS_ON TO COM TO TURN ON.

    F igure 2

  • www.edn.com February 3, 2005 | edn 83

    ideasdesignEdited by Brad Thompson

    Ensuring that new networkedproducts, such as routers, gatewaysor DSLAMs (digital-subscriber-line-access multiplexers) meet stringent tim-ing specifications usually requires a spe-cialized jitter/wander generator. As asubstitute, you can use a standardfunction generator equipped with PM(phase modulation) or FM (frequencymodulation) to measure jitter and wan-der tolerance. This Design Idea describeshow to convert PM and FM parameters(phase deviation, frequency deviation,and modulating frequency) into jitter/wander parametersamplitude in UIs(unit intervals) and frequency.

    Network-communications engineersuse the terms jitter and wander todescribe phase noise in digital signals.Wander refers to phase noise at fre-quencies below 10 Hz, and jitterrefers tophase noise at frequencies at or above 10Hz. Defining phase noise requires specify-ing both its amplitude and its frequency.

    As Figure 1 shows, if you observe aclock with phase noise on an oscilloscopetriggered by a clock of the same frequen-cy but without phase noise, the rising andfalling edges of the noisy clock appearblurredthat is, not clearly defined intime. If the clock has low frequency-phase noise (wander), the rising and

    falling edges move back and forth at arate equal to the wander frequency. Therange of this movement defines the jit-ter/wander amplitude.

    Figure 2 illustrates an instance of sine-wave-shaped FM of jitter or wander. Youcan express jitter or wander amplitude inUIs; one UI is equal to the clock period.For example, the amplitude of the jit-ter/wander in Figure 2 is 0.25 UI p-p.

    You can use a signal generator to gen-erate waveform jitter and wander by con-necting a low-frequency signal source tothe signal generators PM or FM input.Equation 1 applies to both FM and PMand describes the general form of an an-

    gle-modulating signal:s(t)Acos[2f

    Ct(t)].

    Although in digital communications,s(t) usually approximates a square-wavefunction, using a square wave instead ofa sine wave complicates the math butdoesnt affect the process of angle mod-ulation. For simplicity, this Design Ideauses a sine-wave function for s(t).

    For PM, the phase (t) in Equation 1is proportional to the modulation signal:

    (t)DPM

    cos(2fm

    t),where D

    PMis the phase deviation (peak

    variation of the phase), and fm

    representsthe modulating frequency, which is alsothe jitter/wander frequency. The rela-

    Use an off-the-shelf signal source as a jitter/wander generator Slobodan Milijevic, Zarlink Semiconductor

    The effects of jitter or wander appear as position modulation of a pulses leadingand trailing edges.

    1 UI

    JITTER/WANDERAMPLITUDE

    [UI p-p]

    JITTER/WANDERFREQUENCY(Hz)=1/Tj/w

    Tj/wF igure 2

    Applying an external signal source to a signal generators phase- or frequency-modulation inputproduces a jittery output waveform.

    Use an off-the-shelf signal sourceas a jitter/wander generator ......................83

    Temperature controller saves energy........84

    Calculator program finds closest standard-resistor values..................86

    Reduce voltage-reference output noise by half ..............................................................88

    Touch switch needs no dc return path......90

    Publish your Design Idea in EDN. See theWhats Up section at www.edn.com.

    F igure 1

    (1)

    (2)

    The best ofdesign ideas Check it out at:www.edn.com

  • 84 edn | February 3, 2005 www.edn.com

    ideasdesigntionship between phase deviation and jit-ter/wander amplitude is straightforward,and you can obtain it from:

    JITTER/WANDER[UI p-p]D

    PM/180, (3)

    where DPM

    has units of radians in com-munications theory, but, for convenience,most signal generators specify units ofdegrees instead.

    For FM, the phase (t) in Equation 1 isproportional to the integral of modulatingsignal.

    where DFM

    is the frequency deviation(peak variation of the frequency) and f

    m

    is the modulating frequency. The FMmodulating frequency is the same as thejitter/wander frequency. Equation 5 yieldsthe jitter/wander amplitude:

    which derives from Equation 6:

    Therefore, the peak-to-peak deviationof (t) is:

    in which the factor of 2 originates fromthe peak-to-peak amplitude of a sine-wave function. To get jitter/wander inpeak-to-peak unit intervals, divide Equa-tion 7 by the period of the sine-wavefunction, 2. Thus, you get Equation 6,which is valid only when the modulatingsignal comprises a sine wave because theintegral of a sine wave is also a sine-wavefunction shifted in phase. Fortunately,most jitter/wander-tolerance tests almost

    exclusively use sine-wave modulation.Some signal generators specify modu-

    lation in phase and frequency span in-stead of phase and frequency deviation.For PM, the span is the peak-to-peakvariation of the phase, and, for FM, thespan is the peak-to-peak variation of thefrequency. That is, the span equals twicethe deviation for both PM and FM. Inthis case, the jitter/wander amplitude forPM is:

    and it is:

    for FM.

    Given the high cost of electricalpower, replacing a conventionalon/off temperature control with aproportional controller can often saveenergy and money. Figure 1 shows a low-cost, high-efficiency, time-proportionaltemperature controller for a residentialwater heater. An Analog Devices ADT14,

    IC1, serves multiple functions as a tem-

    perature sensor, quad-setpoint, pro-grammable analog temperature monitorand controller. Resistors R

    1, R

    2, R

    3, R

    4,and

    R5adjust desired temperature at setpoints

    SETP1, SETP2, SETP3, and SETP4,which IC

    1compares with the actual tem-

    perature from its internal sensor. The

    ADT14s active-low open-collector out-puts drive Input Port A of IC

    2, an 8-bit

    Motorola/Freescale 68HC908QT4 mi-crocontroller that provides 4 kbytes offlash memory, 128 bytes of RAM, and anon-chip clock oscillator.

    Available at EDNs online version ofthis Design Idea at www.edn.com, List-

    VREF

    SETP4

    SETP3

    SETP2

    SETP1

    GND

    VCC

    OUT4

    OUT3

    OUT2

    OUT1

    VPT

    14

    15

    10

    7

    2

    5

    R110.2k

    R2475

    R3475

    R4475

    R520k

    6

    1

    8

    9

    16 4

    5

    6

    7

    11

    8

    HYST

    PTA3

    PTA2

    PTA1

    PTA0

    PTA3

    PTA3

    GND

    VCC

    1

    5VVCC

    2

    3 1 IC3A2

    74LS06

    ACPOWER

    ACPOWER

    Q1

    HEATER

    68HC908QTADT14SENSOR

    ZERO-CROSS

    CIRCUIT

    IC4

    R6475

    1

    2

    MOC3043

    TIC263M

    R1221

    6

    4

    13

    IC1 IC2

    Temperature controller saves energyTito Smailagich, ENIC, Belgrade, Yugoslavia

    This proportional temperature controller features a minimal parts count.F igure 1

  • 86 edn | February 3, 2005 www.edn.com

    ideasdesign

    ing 1 contains commented assembly-lan-guage software. When you load it into themicrocontrollers flash memory, the soft-ware provides the time-proportionalcontrol algorithm. When IC

    1s OUT1,

    OUT2, OUT3, and OUT4 outputs are in-active, IC

    2 switches its output PTA4 to a

    totally on-state, 100% duty cycle for max-imum heating. Listing 2 at the Web ver-sion of this Design Idea contains an as-sembled version of the software, andListing 3 presents the hex code for pro-gramming IC

    2.

    When IC1s OUT1 output is active, IC

    2

    produces a 75%-duty-cycle output onPTA

    4. In similar fashion, when IC

    1s

    OUT2 output goes active, IC2

    producesa 50%-duty-cycle output on PTA4

    ,, and

    when IC1s OUT3 output goes active, IC

    2

    produces a 25%-duty-cycle output on

    PTA4. When IC

    1s OUT4 output goes ac-

    tive, IC1

    disables the output on PTA4 toproduce a totally off state (0% duty cy-cle). Table 1 summarizes the relationshipof IC

    2s inputs and output duty cycle.

    To minimize component count, IC2s

    internal oscillator generates a 12.8-MHzclock that divides to produce a samplepulse whose basic width is 0.1 sec for each1% of output on-time. One cycle of out-put comprises 100 samples for a total du-ration of 10 sec. Thus, for a 25% duty cy-

    cle, IC2s output PTA4 generates a 2.5-sec

    on interval followed by a 7.5-sec off in-terval. One section of an open-collectorhex inverter, IC

    3A, a 74LS06, drives opto-

    coupler IC4, an MOC3043, which fea-

    tures an internal zero-crossing circuit andpilot triac. Power triac Q

    1, a TIC263M

    rated for 600V and 25A, controls appli-cation of power to the water heaters 2-kW resistive heating element. For best re-sults, place IC

    1in close thermal contact

    with the water heaters inner tank.

    Calculator program finds closest standard-resistor valuesFrancesc Casanellas, Aiguafreda, Spain

    Although it may not appear obviousto newcomers to the electronics-de-sign profession, components valuesfollow one of several progressions that di-vide a decadewide span into equallyspaced increments on a logarithmic scale.For example, when you plot the values of1, 2.2, and 4.7 on a logarithmic scale, theydivide the range 1 to 10 into three rough-ly equal increments (1... 2... 5). To meet re-quirements for greater precision, resistormanufacturers offer parts in several addi-tional series. The most precise series di-vide a decade into 24, 48, or 96 incrementsby computing 10n/m ,where n1... (m1),

    and m24, 48, or 96, and then roundingthe values to two or three digits. The re-sults are the R

    24, R

    48, and R

    96series and re-

    spectively contain 24, 48, or 96 values perdecade.

    You can use a Hewlett-Packard HP-48or HP-49 calculator and one of the fol-lowing programs written in RPN (Re-verse-Polish Notation) to compute thenearest standard value thats closest to arequired value.You enter a required resis-tor value, and the program returns theclosest higher or lower value in the select-ed series. Table 1 lists a few examples.

    Each program acts as an operator byprocessing the first line ofthe calculators stack and re-turning the new value in thesame line of the stack. TheR

    48and R

    96series are math-

    ematically exact, and theirprograms consist of only asingle line of code. The List-

    ings at the Web version of this Design Ideaat www.edn.com show the code. The val-ues of the older R

    24series are not as strict-

    ly rounded,and the program is thus some-what more complex.

    Note that the values of other compo-nents, such as capacitors, inductors, andzener diodes, also follow preferred-valueseries, making these programs universal-ly applicable. You can view an earlier ver-sion of a standard-value calculator forIBM-compatible PCs at EDNs online ver-sion of Design Ideas. David Kirkby of theDepartment of Medical Physics, Univer-sity College London, UK, wrote the pro-gram in C. EDN first presented it, Resis-tance calculator yields precise values,in the Aug 3, 1995, issue.You can read theinstructions at www.edn.com/archives/1995/080395/16di5.htm. Note that cer-tain portions of the software may requirerewriting for better operation on todaysPCs.

    TABLE 1INPUT VALUE IN SELECTED SERIES RETURNS A CLOSEST VALUE OF:47.8 R24 47490 R24 51012.2 R96 12.112.3 R96 12.4

    TABLE 1IC2S LOGIC STATES VERSUS OUTPUT DURATIONSPTA3 PTA2 PTA1 On (%) Off (%) On (sec) Off (sec)

    1 1 1 100 0 10 01 1 1 75 25 7.5 2.51 1 0 50 50 5 51 0 0 25 75 2.5 7.50 0 0 0 100 100 10

  • 88 edn | February 3, 2005 www.edn.com

    ideasdesign

    Reducing low-frequency (1/f)noise generated by an IC voltagereference can prove difficult. In the-ory, adding a lowpass filter to a refer-ences output reduces noise. In practice,a lowpass RC filter for suppression ofnoise frequencies below 10 Hz requireslarge values of series resistance and shuntcapacitance. Unfortunately, a high-valueseries resistor introduces resistance errorsand thermal noise, and a shunt capaci-tors leakage resistance forms an unpre-dictable and unstable shunt path. To-gether, the two components form a noisyand temperature-dependent voltage di-vider that directly affects the referencesaccuracy and long-term stability. In ad-dition, pc-board surface contaminantscan add yet another possible leakage pathand error source.

    You can stack multiple voltage refer-ences in series to reduce their 1/f noise.The references dc outputs add linearly,and their uncorrelated internal noisesources add geometrically. For example,consider a stack of four voltage refer-ences, each comprising a dc referencesource, V

    REF, in series with a random-

    noise generator, VNOISE

    . Adding four ref-erence sources produces the followingoutputs: V

    REFTOTAL4V

    REF, and V

    NOISE-

    TOTAL4(V

    NOISE)22V

    NOISE. The

    original ratio of noise voltage to dc ref-erence voltage thus divides in half.

    Figure 1 illustrates a method of addingmultiple references to produce a single,less noisy reference voltage. The resistorsare parts of a highly stable metal-filmnetwork, and buffer amplifier IC

    5offers

    low noise, low input-offset voltage, andlow offset-temperature coefficients.

    Tables 1 and 2 present the noise volt-ages that result from stacking four eachof two types of 2.5V references. Eachtable shows the 0.1- to 10-Hz noise volt-age for each of the four references,IC

    1through IC

    4, and for the com-

    bination. Note that the dispersion in theratios of rms to peak-to-peak values re-lates to subjectivity in the method ofmeasuring the values. In addition to low-er 0.1- to 10-Hz noise, the circuit also re-duces long-term drift of the referencevoltage.

    Four 2.5V references, IC1 through IC4, produce 10V. Resistors R1 and R2 form a voltage divider thatreduces the 10V output to 2.5V and lowers the output-noise voltage by half. Buffer amplifier IC5isolates the reference circuit from the load.

    IC12.5V

    REFERENCE IC10VREF

    OUTINGND

    IC22.5V

    REFERENCE IC OUTIN

    GND

    IC32.5V

    REFERENCE IC OUTIN

    GND

    IC42.5V

    REFERENCE IC OUTIN

    GND

    2.5VREDUCED-

    NOISEREFERENCE

    OUTPUT

    IC5MAX4236A

    R24.99k

    R14.99k

    C50.1 F

    C40.1 F

    C30.1 F

    C1 C2100 F

    12V0.1 F

    12V

    C60.1 F

    F igure 1

    Reduce voltage-reference output noise by halfAlfredo H Saab and Steve Logan, Maxim Integrated Products Inc, Sunnyvale, CA

    TABLE 1NOISE VOLTAGES MEASURED IN FIGURE 1 USING FOUR 2.5V MAX6037 VOLTAGE REFERENCES

    Measurement points Noise Noise(V rms) (V p-p)

    Reduced noise output 1 10(op amps output to V)Across Reference A (IC1) 1.9 20(OUT to GND)Across Reference B (IC2) 1.6 19(OUT to GND)Across Reference C (IC3) 1.7 20(OUT to GND)Across Reference D (IC4) 2.7 30(OUT to GND)

    TABLE 2NOISE VOLTAGES MEASURED IN FIGURE 1 USING FOUR 2.5V MAX6143 VOLTAGE REFERENCES

    Measurement points Noise Noise(V rms) (V p-p)

    Reduced noise output 0.27 2.2(op amps output to V)Across Reference A (IC1) 0.52 4.7(OUT to GND)Across Reference B (IC2) 0.6 4.8(OUT to GND)Across Reference C (IC3) 0.5 4.3(OUT to GND)Across Reference D (IC4) 0.55 4.7(OUT to GND)

  • 90 edn | February 3, 2005 www.edn.com

    ideasdesign

    Common designs for touch switch-es detect a decrease in resistancewhen a users fingertip either con-nects a contact to the circuits commonground or supplies an injection of 60-Hzac voltage, resulting from immersion inthe electrostatic field that nearby powerlines radiate. But what if no nearby pow-er lines exist and the equipment operatesfrom a battery source, such as in an au-tomotive application, or if a galvanic con-tact to circuit common is unavailable?

    The circuit shown in Figure 1 operatesby sensing an increase in capacitance thatresults from touching a contact. Al-though a straightforward design mightrequire a complex circuit, the design

    shown offers a low-cost approach thatuses few components.

    In Figure 1, IC1A

    operates as a square-wave oscillator at approximately 150 kHz.The oscillators output gets ac-coupled topotentiometer R

    2that sets the drive level

    and, hence, the sensitivity for the touchpad. Applying negative excursions of sev-eral volts of square-wave signal to its gaterepetitively drive N-channel JFET Q

    1

    from conduction into cutoff. An approx-imation of the square wave swingingfrom 0 to 12V appears at Q

    1s drain. A

    peak detector circuit formed by D1, R

    7

    and C4

    provides sufficient dc voltage toforce IC

    1Bs output to a logic low.

    However, if someone touches the

    touch pad, any added capacitance toground or circuit common reduces the acdrive at the FETs gate, and Q

    1continu-

    ously conducts. The square-wave voltageapplied to D

    1decreases. The voltage on

    C4

    drops below the logic threshold, andIC

    1Bs output goes high.You can adjust R

    2

    to set sensitivity and compensate for de-vice-to-device variations in the FETspinch-off voltage. For novelty or nostal-gias sake, you can use one-half of a12AX7 dual triode as an oscillator and theremaining half in place of Q

    1. Selecting

    plate resistors allows operation with a12V plate power supply.

    IC14010

    8

    IC1401

    10

    IC14010

    IC1C40106

    IC1B40106

    C41 nF

    R71M

    R410k

    R3100k

    R510M

    D11N4148

    R610k

    R210k

    R16.8k

    C21 nF

    C30.1 F

    C10.1 F

    Q12N5457

    12

    9

    11

    13

    TOUCH

    TOUCH

    TOUCHPAD

    12V

    12V

    5 6

    3 4

    1 2

    7

    14IC1A

    40106

    DRIVE LEVEL/SENSITIVITY

    F igure 1

    Touch switch needs no dc return pathBrad Albing, Philips Medical Systems Inc, Cleveland, OH

    A low-cost touch-switch interface uses three Schmitt trigger hex inverters and a single JFET per channel.

  • www.edn.com February 17, 2005 | edn 77

    ideasdesign

    Digitally controlled potentiome-ters are useful for generating analogcontrol voltages under the controlof a microcontroller. In some applica-tions, manual pushbutton switches couldreplace a microcontroller and simplifyproduct design. Mechanical switches ex-hibit contact bounce, and, when a useractuates them, they may open and closemany times before reaching a stable state.

    A digital potentiometers control inputslack switch-debouncing capabilities, andits up/down control is not suited forpushbutton operation. Figure 1 illus-trates solutions to these issues and showshow to use a digital potentiometer tocontrol a boost converter.

    The potentiometer, IC1 , a MAX5160M,

    presents an end-to-end resistance of 100k. To increment the wipers position,W,you press and hold the U/D pushbutton,S

    2, to pull the U/D pin high and then

    press and release pushbutton S1

    to pulsethe INC input. Similarly, you decrementthe wiper position by releasing S

    2and

    pulsing S1.

    A time-delay network comprising R1,

    R2, and C

    1masks S

    1s switch bounce,

    which would otherwise toggle the wipersposition between V

    DDand approximate-

    ly 0V. When you press S1, capacitor C

    1

    charges via R2

    and causes the INC pin to ramp slowly toward 0V, thereby re-moving the effects of S

    1s contact bounce.

    The R1C

    1time constant requires that

    you depress S1

    for several milliseconds before the INC input takes effect.

    In this application, switching convert-er IC

    2,, a MAX1771, operates as a stan-

    dard boost converter and increases its 5Vinput to a higher voltage positive output.You can use Equation 1 to set IC

    2s out-

    R1100k

    R210k

    S1R610k

    2

    1

    3

    4

    5V

    5V

    S2

    C10.1 F

    5VVIN

    MAX5160IC1

    7

    6

    5

    VIN

    VDD 8

    CS

    L

    W

    IC2MAX1771

    GND

    5

    4

    6

    REF

    SHDN

    AGND

    EXT

    CS

    FB

    VOUT5 TO16V

    R333k

    +

    +

    VIN5V C4

    68 FC2

    0.1 F

    2

    1

    8

    3

    V+L1

    47 H

    D11N5817

    R510k

    R44.7k

    7

    R70.1

    Q1IRF530

    200 FC6

    INC

    U/D

    H

    GND

    5V

    C30.1 F

    Pushbuttons and digital potentiometer control boost converterSimon Bramble, Maxim Integrated Products Inc, Wokingham, UK

    A digital potentiometer, IC1, and two pushbutton switches, S1 and S2, let you adjust the regulated output voltage of boost con-verter IC2 over a 10V range.

    Pushbuttons and digital potentiometer control boost converter ................................77

    Microcontroller protects dc motor..............78

    Improved Kelvin contacts boost current-sensing accuracy by an order of magnitude ..........................80

    Active pullup/pulldown network saves watts ......................................................82

    Sine-wave step-up converter uses Class E concept ..............................................82

    Publish your Design Idea in EDN. See theWhats Up section at www.edn.com.

    Edited by Brad Thompson

    The best ofdesign ideas Check it out at:www.edn.com

    F igure 1

  • 78 edn | February 17, 2005 www.edn.com

    ideasdesign

    Although any overloadeddc motor can draw exces-sive current and sustaindamage, a cooling fans motoris particularly vulnerable dueto fouling by dust, insects, ormisplaced objects. A fewfans include built-in overloadprotection, and others can usean external warning device,such as Microchips TC670 fan-failure detector.

    In many products, its essen-tial not only to detect an over-loaded motor, but also toswitch off the motor to preventfailure. Although you can de-sign a protection systemaround the TC670, a low-endmicrocontroller can offer a lessexpensive, more flexible, andeasier to implement alterna-tive. If a product includes a mi-crocontroller, only two sparepins are necessary for motorprotection.

    Figure 1 shows a dedicatedprotection circuit based on asmall microcontroller and apower FET. This project uses aneight-pin flash-memory MC68HC-908QT2 from Freescale and an IRF520AFET from Fairchild to control a dc brush-less-fan motor rated for 0.72A at 12V dc.A high or low output voltage on outputPA5 of IC

    1 controls Q

    1, an N-channel FET

    that in turn controls the motor. Currentthrough the motor develops a voltage, V,thats proportional to the motor currentacross sense resistor R

    1. A lowpass filter

    comprising R2

    and C1

    reduces noise onthe sense voltage you apply to input PA4

    and IC1s built-in A/D con-

    verter. Voltage regulator IC2

    provides stable 5V power forIC

    1.

    Under normal operation,the voltage across R

    1measures

    approximately 0.52V. Whenthe motor undergoes an over-load, voltage increases until itreaches a preset upper limit of0.85V. The output on PA5then drops to a low level,switching off transistor Q

    1 to

    stop the motor, and lightingD

    1to indicate the overload.

    When the motor stops, itdraws no current, and thesense voltage falls below theminimum threshold value of0.3V. The microcontrollersoutput on PA5 remains lowand holds off Q

    1, a state that

    it maintains indefinitely untilyou cycle the circuits poweroff and then on.

    The control program, in as-sembly language for the MC-68HC908, features a straight-

    forward algorithm adaptableto other microcontrollers that

    include an A/D converter. A 2.5-sec de-lay routine prevents the motor fromstarting until the systems power-supplyvoltage stabilizes. You can download thelisting from the online version of this Design Idea at www.edn.com.

    LED

    78L051 3

    2

    IC2

    D1

    IC1

    12V

    DCMOTOR

    Q1IRF520

    R11.3

    R2100k

    C110 F

    2

    3

    1

    8

    1

    2

    3

    MC68HC908QT2

    PA5

    PA4

    V

    NOTE: D1, A LITE-ON LTL-4223-R2, INCLUDES A BUILT-IN RESISTOR.

    F igure 1

    Microcontroller protects dc motorAbel Raynus, Armatron International Inc, Malden, MA

    Controller for dc brushless fan motor features minimal parts count.

    put to a nominal 12V output without thedigital potentiometer:

    Connecting IC1s wiper via 10-k re-

    sistor R5

    to IC2s FB (feedback) node sets

    IC2s voltage-feedback level. Although

    inclusion of feedback resistors R3, R

    4,

    and R5

    and digital potentiometer IC1

    complicates the precise calculation ofIC

    2s output voltage, you can simplify the

    math by calculating the output voltages

    at the potentiometers extreme settings.Thus, with IC

    1s wiper set to 0V, R

    equals the paralleled resistance of R4

    andR

    5, and IC

    2s maximum output voltage

    becomes Equation 2:

    or VMAX16.84V.

    With IC1s wiper set to 5V, you can at-

    tempt to calculate the minimum outputvoltage by summing voltages into thefeedback node:

    which simplifies to VMIN0.48V.

    However, Equation 3 provides an incor-rect value for V

    MINbecause a boost con-

    verters output voltage cannot go belowits input voltage. You can approximateV

    MINby substituting a value of 10 k for

    R5

    in Equation 3 and solving for VMIN

    :V

    MIN4.93V. Refer to the manufacturers

    application notes for additional compo-nent information.

    (2)

    (3)

    (1)

  • 80 edn | February 17, 2005 www.edn.com

    ideasdesign

    Many power-supply designs relyon accurately sensing the voltageacross a current-sense element.Multiphase regulators use the sense volt-age to force current sharing among phas-es, and single-phase regulators to controlthe current-limit setpoint. As internalcomplexity and clock speeds increase,processors impose narrower operatingmargins for power-supply voltages andcurrents, which in turn make accuratecurrent sensing critically important. Themost accurate of several available meth-ods involves inserting a low-value cur-rent-sensing resistor in the power sup-plys output path. Another populartechnique uses the parasitic resistance ofa switching regulators output inductoras the sense element. For either method,currents of 20A or more per power-sup-ply phase impose a sense-resistance lim-it of approximately 1 m. Precision re-sistors of 1% accuracy are available atreasonable cost, but an error of 1% of 1m amounts to only 10 .

    The resistance of solder joints that at-tach a sense resistor or inductor can eas-ily exceed 10 and, worse yet, can varysignificantly during a production run. Inthe past, discrete four-wire resistors pro-vided separate high-current and sense-voltage connections, allowing accurateKelvin sensing and excluding voltagedrops that the high-current connectionsintroduce. Unfortunately, four-wire senseresistors or inductors are unavailable inlow cost SMD packages. Thus, most pow-er-supply designers use two-wire sensecomponents and apply a Kelvin-connec-tion pc-board-layout technique (Figure1). However, test results reveal that ap-plying conventional Kelvin sensing tech-niques to low-value resistors introducestransduction errors as high as 25%anunacceptable error margin for designsthat require high accuracy.

    So, whats a power-supply designer todo? The answer involves a slight variationon an old idea that requires only a minor

    change in a sense resistors mountingfootprint. To compare performance ofconventional Kelvin connections versusthe proposed method, a test board in-cludes three pc-layout footprints for in-stallation of 1-m, 1%-accurate, surface-mount resistors. In all three patterns,current enters and exits the resistor viatraces (not shown) on the pads left andright sides, respectively.

    In Figure 1a, applying a current of4.004A produces a sense voltage at theKelvin terminals of 4.058 mV, a 1.35% er-ror. At 8.002A, the sense voltage at theKelvin terminals measures 8.090 mV, a1.1% error. In Figure 1b, a current of4.004A produces a sense voltage at theKelvin terminals of 5.01 mV, a 25% error.At 8.002A, the sense voltage at the Kelvinterminals measures 9.462 mV for an er-

    ror of 18.2%. Figure 2 shows an im-proved component footprint. Each largesolder pad includes a central cutout areathat partially surrounds a narrow padthat solders directly to the sense elementand thus carries no current. This ap-proach removes from the sense path thelarge-area solder joints that mount thepart and carry high load current.

    When you apply a current of 4.002A tothe pads in Figure 2, voltage at the Kelvinterminals measures 4.004 mV, a 0.05%error. At 8.003A, the sense voltage meas-ures 8.012 mV, an error of only 0.11%and an order of magnitude improvementover Figure 1a. Sense-voltage variationover temperature should greatly improve,and solder-thickness variation no longeraffects the sense voltage. Best of all, thetechnique costs nothing to implement.

    Obviously, the technique in Figure 2works only with terminations sufficient-ly wide to allow dividing the solder padinto three sections and still retain ade-quate soldering area to handle the high-current connections. However, for manydesigns, this simple technique can signif-icantly improve the accuracy of currentsharing, V-I load-line characterization,and current-limit setpoints.

    CURRENT FLOW

    S1 S2

    CURRENT FLOW

    (a)

    (b)

    S1 S2

    S1 S2

    Improved Kelvin contacts boost current-sensing accuracy by an order of magnitudeCraig Varga, National Semiconductor Corp, Phoenix, AZ

    Conventional solderpads offer two choices

    for Kelvin connections: on the pads inneredges (a) or outer corners (b).

    Modified pads provideisolated Kelvin connec-

    tions that eliminate errors introduced by volt-age drops across soldered connections carryinghigh current.

    F igure 1

    F igure 2

  • 82 edn | February 17, 2005 www.edn.com

    ideasdesign

    Many power applications rangingfrom luminescent and fluorescentlighting to telephone-ringing volt-age generators require a more or less si-nusoidal-drive voltage. These applica-tions typically require a waveform of onlymoderate quality, and its frequency isntespecially critical. However, avoidingwaveform discontinuities that cause un-wanted current peaks, excessive device

    dissipation, and EMC problems rules outusing filtered square waves or otherstepped waveforms. Sometimes, a trape-zoidal drive may be acceptable but itsonly a second choice at best. This DesignIdea proposes a method of generatingsine waves that offers a number of ad-vantages over more complex methods:

    The circuit requires only one power-switching device, and you can use an ana-

    log or a digital signal to drive the switch-ing device. The circuit also requires onlya few components: a diode, a switchingtransistor or a MOSFET, an inductor ora transformer, and a capacitor. Further,the designs circuit losses are low, and theswitching device experiences minimalstress during operation. Figure 1 showsthe basic circuit, and Figure 2 illustrates

    Sine-wave step-up converter uses Class E conceptLouis Vlemincq, Belgacom, Evere, Belgium

    The control circuit in Figure 1presents a relatively low input resist-ance and thus imposes a low value onexternal pulldown resistor R

    1to provide

    the desired low-level input voltage. Inturn, R

    1 wastes power by drawing a rela-

    tively high current through switch S1. For

    example, suppose that the control circuitpresents an input resistance of 2.2 k andrequires a logic-low input of 5V or less.At a V

    CCof 24V, R

    1must not exceed 500

    for a current drain of 24/50048 mA.The power dissipated in R

    1is thus

    242/0.51152 mW, which requires a 2Wresistor for reliable operation.

    In this application, the system includesthree controls with three input circuits,which present a total current of 432 mA

    and adds approximately 10W to the pow-er budget. To reduce wasted power, it usesan active pulldown circuit (inside thedashed line in Figure 2).As long as switchS

    1remains closed, PNP transistor Q

    1s

    base voltage exceeds its emitter voltagedue to diode D

    1s forward voltage drop.

    Thus, Q1

    doesnt conduct, and the con-trol circuits input voltage rests atV

    CC0.7V (D

    1s forward voltage drop).

    Opening S1

    reverse-biases D1, and the

    base current flowing through resistor R1

    turns on Q1, which saturates and pulls the

    circuits input to VCE(SAT)

    . Closed-circuitcurrent through S

    1is thus V

    CC/R

    1. For ex-

    ample, with VCC

    of 24V and R1

    having avalue of 10 k, I24/102.4 mA, and R

    1

    dissipates 0.058W, or approximately 20times less power than in Figure 1. In thisapplication, current demand of the ninecontrol-circuit inputs decreases from 432to 22 mA and saves pc-board space byeliminating the need for using 2W. As avariant, Figure 3 shows an active-pullupversion of the circuit.

    ENABLE

    D2

    S1

    VCC

    R22.2k

    R1500

    I ENABLE

    D2D1

    Q1

    S1

    VCC

    R22.2k

    R110k

    I

    D1

    Q1

    R110k

    S2

    VDD

    Active pullup/pulldown network saves wattsJB Guiot, DCS Dental AG, Allschwil, Switzerland

    A conventional networkrequires a low-value pulldown resistor.

    An active pulldown cir-cuit substitutes a saturated transistor for apower-consuming pulldown resistor.

    Rearranging the circuit andusing an NPN transistor for Q1 yields an active-pullup network.

    F igure 1F igure 3F igure 2

    (continued on pg 86)

  • 86 edn | February 17, 2005 www.edn.com

    ideasdesign

    waveforms within the circuit.In operation, the sine-wave output ap-

    pears across inductor L in a series LC cir-cuit. An external clock source pro-duces gate drive for transistor Q at afrequency thats lower than the LC cir-cuits natural resonant frequency. Whenthe transistor conducts, the inductor re-ceives a charging current via diode D.When conduction ends, energy stored inthe inductor transfers to capacitor C, anda damped oscillation begins (uppermosttrace in Figure 2). The voltage across ca-pacitor C approximates a sine wave (toptrace). Drain current in transistor Qshows that no current flows until the ca-pacitor voltage forward-biases diode D(middle trace). The gate-drive pulse in-terval is lower than the series-resonantfrequency that L and C present (bottomtrace).

    During the negative-going portion ofthe cycle, the external clock source appliesgate drive to the transistor. Diode D is stillreverse-biased, and thus no current flowsinto Q. When the voltage across C goespositive, diode D conducts and allows

    current to recharge the inductor and re-plenish energy lost in the previous cycle.In balanced operation, energy suppliedduring the conduction phase replenish-es energy supplied to the load and dissi-pated in component losses.

    To produce a higher peak voltage, youextend the conduction interval by raising

    the drive frequency or by extending theon interval. You can regulate the outputvoltage by applying conventional closed-loop feedback techniques to a variable-frequency clock oscillator or, in digitalsystems, by altering the clocks duration.For most applications in which load cur-rent is relatively fixed, such as in an elec-troluminescent panel lamp, an open-loopadjustment or manual control offers suf-ficient flexibility once you determine aclock-frequency range that correspondsto the desired degree of illumination.

    For peak voltages not exceeding 10times the power-supply voltage, you canconnect the load directly to the junctionof D, L, and C. You can achieve highervoltage-to-step-up ratios at the expenseof applying additional voltage and cur-rent stress to L and C. Instead, you canadd an isolated secondary step-up wind-ing to the inductor. For optimum effi-ciency, use components designed forhigh-frequency power handlingfor ex-ample, a polypropylene-dielectric capac-itor and a low-loss inductor.

    If the load consists of an electrolumi-nescent panel that behaves as a lossy ca-pacitor, you may be able to eliminate theuse of external capacitor C. Transistor Qmust obviously be able to withstand peakvoltages and currents that the circuit im-poses, but its specifications are otherwiserelatively noncritical. No switching lossoccurs at the beginning of the conduc-tion due to the Class E mode of opera-tion, and the output capacitor assists thedevices turn-off recovery. For outputvoltages not exceeding approximately50V, you can improve efficiency by se-lecting a Schottky or other fast-recoverydiode for use in the circuit.

    For powering lamps and generatingtelephone-ringing signals, the sine wavesflat spots are of little consequence be-cause of their relatively short durationand low harmonic-energy content. Youcan minimize these intervals by reducingthe LC ratio and thus increasing theloaded Q factor of the LC circuit. How-ever, for a given output voltage, increas-ing Q factor also increases the peak cur-rent because the same amount of energymust transfer to the inductor in lesstime.

    OUTPUT

    L

    D

    QGATE-DRIVEINPUT

    C

    F igure 1

    Few components are necessary to produce apseudo sine wave.

    The circuit in Figure 1 produces these waveforms.

    VOLTAGE ACROSS

    CAPACITORVCC

    GROUND

    DRAINCURRENT

    GATEDRIVE

    TRANSISTOROFF INTERVAL

    TRANSISTOR QCONDUCTION

    INTERVALF igure 2

    (continued from pg 82)

  • www.edn.com March 3, 2005 | edn 71

    ideasdesign

    Applications such as audio equal-izers require bandpass filters with aconstant maximum gain thats inde-pendent of the filters quality factor, Q.However, all of the well-known filter ar-chitecturesSallen-Key, multiple-feed-back, state-variable, and Tow-Thomassuffer from altered maximum gain whenQ varies. Equation 1 expresses the sec-ond-order bandpass transfer function ofa bandpass filter:

    where K represents the filters gain con-stant.When the input frequency equals

    O,

    the filters gain,AMAX

    , is proportional to theproduct, KQ. Thus, modifying the qualityfactor alters the gain and vice versa.

    This Design Idea describes a filterstructure in which K is inversely propor-tional to Q. Altering Q also modifies K,producing a magnitude-plot set in whichthe curves maintain the same maximumgain at the central frequency

    0that is,

    KQ remains constant. Figure 1 shows thefilter, which comprises a twin T cell withan adjustable quality factor and a differ-ential stage. The differential stage com-prises op amp IC

    3and resistors R

    5A

    through R5D

    . This stage outputs the dif-ference between the filters input signaland the twin-T networks output. Capac-itors C

    1and C

    2are of equal value,

    CC1C

    2, capacitor C

    3equals 2C, resis-

    tors R1

    and R2

    are also equal and of val-ue RR

    1R

    2, and R

    3equals R/

    2. Equa-

    tion 2 describes the twin-T circuitstransfer-function response as a notch fil-ter producing output V

    BR(t):

    Equation 3 describes the compete cir-cuits transfer function, a bandpass-filterresponse with output V

    OUT(t):

    where m represents the twin-T cellsfeedback factor. If you designate R

    XYas

    the resistance potentiometer R4s upper

    terminal, Point X; the rotor as Point Y;and R

    YZas the resistance between the ro-

    tor and the bottom terminal, Point Z,you can express m as the quotient ofEquation 4:

    Comparing Equation 3 with the re-spective normalized transfer functions ofa bandpass filter, Equation 1, Equation5 expresses the central frequency of thefilter,

    O, coincident with the transmis-

    sion zero of the twin-T network:

    R1 R2

    VIN(t)

    VOUT(t)

    C1 C2R3

    C3

    IC2

    IC1 R5A R5B

    R5C R5D

    IC3A

    XY

    Z

    VBR(t)

    R4

    _

    +

    _

    +_

    +

    Bandpass filter features adjustable Q and constant maximum gainHerminio Martnez, Joan Domingo, Juan Gmiz, and Antoni Grau,Technical University of Catalonia, Barcelona, Spain

    This bandpass active filter features adjustable Q and maximum gain in thepassband and consists of a twin-T cell with Q adjustment and a differential

    output stage. You can also extract a frequency-notch output from the voltage-follower stage.

    Bandpass filter features adjustable Q and constant maximum gain......................71

    Moving-coil meter measures low-level currents ..........................................72

    MOSFET enhances voltage regulators overcurrent protection ..................................74

    Digitally programmable resistorserves as test load..........................................76

    Publish your Design Idea in EDN. See theWhats Up section at www.edn.com.

    Edited by Brad Thompson

    F igure 1

    (1)

    (2)

    (3)

    (4)

    (5)

    The best ofdesign ideas Check it out at:www.edn.com

  • 72 edn | March 3, 2005 www.edn.com

    ideasdesign

    Equations 6 and 7, respectively, givequality factor Q and gain constant K:

    The maximum gain, AMAX

    , at O,

    always remains constant and equal to 1(0 dB) and is independent of Q. Theminimum quality factor is 1/4 for m0,which corresponds to the potentiome-ters rotor connected to ground. Themaximum gain is theoretically infinite,but, in practice, its difficult to achieve aquality factor beyond 50. In most appli-cations, Q ranges from 1 to 10.

    Figure 2 shows the filters magnitudeand phase Bode plots for the frequency-notch output V

    BR(t) (available at IC

    1s

    output) for values of m from 0.1 to 0.9.Figure 3 shows Bode plots for the filtersbandpass output, V

    OUT(t), for the same

    values of m. In both graphs, frequency fO

    equals 1061 Hz. To minimize frequency-response variations and improve re-sponse accuracy, you can build the filterwith precision metal-film resistors of 1%or better tolerance. Likewise, use close-tolerance mica, polycarbonate, polyester,polystyrene, polypropylene, or Teflon ca-pacitors. For best performance, avoidcarbon resistors and electrolytic, tanta-lum, or ceramic capacitors.

    Magnitude and phase Bode plots at the bandpass output, VOUT(t), showeffects of varying twin-T-cell feedback factor, m, from 0.1 to 0.9.

    Although an analog moving-coilmeter may lack the resolution andaccuracy that a digital readout pro-vides, a meter remains the display ofchoice for certain applications. A digitalreadout simply cannot provide informa-tion about a measurements rate ofchange, and tracking a readings trend iseasier on an analog meter.

    Large moving-coil meters may requiresignificant amounts of current for full-scale deflection, and using a shunt resis-tor may prove impractical when the me-

    ter current is larger than the current youare measuring.You can solve the problemby driving the meter from a separatepower supply (Figure 1). In this example,an 8-in. moving-coil meter that requires15 mA for full-scale deflection displays acurrent range of 0 to 1A dc. This tech-nique can also simplify specifying or fab-ricating shunt resistors for custom cur-rent ranges. Unlike other current-senseamplifiers that derive operating powerfrom the current you are measuring, IC

    1

    provides a separate supply-voltage ter-

    minal for its internal circuitry. In opera-tion, IC

    1s output current, I

    OUT, equals

    VSENSE

    /100V, where VSENSE

    is the voltageacross R

    SENSE1.

    This Design Idea uses IC1

    rather thanthe many current-sense amplifiers avail-able because it provides a separate sup-ply-voltage terminal for the internal cir-cuitry, whereas other devices take powerfrom the current you are measuring. Inthis application, a full-scale current of 1Adevelops 1V across R

    SENSE1, which IC

    1

    converts to a maximum output current

    Moving-coil meter measures low-level currentsKevin Bilke, Maxim Integrated Products Inc, Hook Hants, UK

    F igure 3

    Magnitude and phase Bode plots at the frequency-notch output, VBR(t),show effects of varying twin-T-cell feedback factor, m, from 0.1 to 0.9.

    F igure 2

    0

    40

    80

    100

    0

    100

    0

    10

    20

    30

    100

    0

    100

    100 Hz 300 Hz 1 kHz 3 kHz 10 kHz FREQUENCY

    100 Hz 300 Hz 1 kHz 3 kHz 10 kHz FREQUENCY

    VdB (VNOTCH)

    VdB (VNOTCH)

    (6)

    (7)

    PHASEMARGIN

    ()

    GAIN(dB)

    PHASEMARGIN

    ()

    GAIN(dB)

  • 74 edn | March 3, 2005 www.edn.com

    ideasdesign

    of 10 mA that produces a maximumvoltage of 1V across R

    1. Operational am-

    plifier IC2

    and transistor Q1

    form a volt-age-controlled current sink that drawscurrent through meter M

    1. A full-scale

    reading of 15 mA develops 1V across66 resistor R

    SENSE2. You can adjust the

    resistors value to calibrate the meter orto alter the full-scale current range.

    This circuit also allows separation ofthe measurement point and meter loca-tion. Moving-coil meters are not intend-ed for applications that require precisionmeasurement, and you can use relaxed-accuracy passive components.Bypass the instrument-supplyvoltage with decoupling capacitors thatthe electrical-noise environment re-quires.

    MAX4172

    MAX495

    RS+ RS

    V+

    OUT

    RSENSE11

    RSENSE266

    1 2

    OPERATING-SUPPLYRANGE

    0 TO 32V

    MEASUREDCURRENT

    0 TO 100 mA

    5

    6

    8

    3

    4

    7

    62

    GND

    1k

    5V INSTRUMENT SUPPLY

    _

    +

    BC182

    METERFULL-SCALE

    15 mA

    FULL-SCALE=1V

    IC1

    IC2R1 Q1

    M1

    F igure 1

    This circuit displays current on a moving-coil meter that consumes a substantial fraction of the cur-rent you are measuring.

    The classic LM317 adjustable-outputlinear voltage regulator offers a rela-tively high, if package-dependent,current-handling capability. In addition,the LM317 features current limiting andthermal-overload protection. With theaddition of a few components, you canenhance an LM317-based voltage regu-lator by adding a high-speedshort-circuit current limiter(Figure 1). Under normal operation, re-sistors R

    2and R

    3apply V

    GSbias to power

    MOSFET Q1, an IRF4905S, which fully

    conducts and presents an on-resistanceof a few milliohms. The voltage dropacross current-sampling resistor R

    1is

    proportional to IC1s input current and

    provides base drive for bipolar transis-tor Q

    2.

    As load current increases, the voltageacross R

    1increases, biasing Q

    2into con-

    duction and decreasing Q1s gate bias. As

    Q1s gate bias decreases, its on-resistance

    increases, limiting the current into IC1,

    according to IMAX

    VBE

    Q2/R

    1, or approx-

    imately 0.6V/1.

    Resistors R5

    and R6

    set IC1s output

    voltage, as the LM317s application notesdescribe. By varying the value of R

    1, you

    can adjust the circuits limiting currentfrom milliamperes to the LM317s maximum current-handling capability.

    Diodes D1

    and D2, respectively, protect

    against capacitive-load discharge and po-larity reversal. Depending on the circuitsrequirements, IC

    1and Q

    1may require

    heat dissipators.

    MOSFET enhances voltage regulators overcurrent protectionHerb Hulseman, Eagle Test Systems, Mundelein, IL

    +2N3906Q2 +

    R320k

    1N4002

    D1

    IRF4905SQ1

    IN OUT

    ADJ

    18VOUT

    D21N4002

    1 FC2

    R5240

    R63.3k

    20kR2

    R220k

    1

    R1124VIN

    G

    S D

    C1 F

    IC1LM317

    1

    23

    A few added components extend this linear regulators overcurrent protection.

    F igure 1

  • 76 edn | March 3, 2005 www.edn.com

    ideasdesign

    F IGURE 1 illustrates a digitally pro-grammable precision resistance thatcan serve as a microprocessor-driv-en power-supply load in custom-de-signed ATE (automatic-test equipment).An 8-bit current-output DAC, IC

    1, a

    DAC08, drives current-to-voltage con-verter IC

    2A, which in turn drives the gate

    of power MOSFET Q1. The device under

    test connects to J1

    and J2. In operation,

    current from the device under test devel-ops a voltage across sampling resistorsR

    8Aand R

    8B. Amplifier IC

    2Bdrives IC

    1s

    reference input and closes the feedbackpath. Transistor Q

    2provides overcurrent

    protection by diverting gate drive from

    Q1

    when the voltage drop across R8A

    andR

    8Breaches Q

    2s V

    BE(ON).V

    Oand I

    Orepre-

    sent the output voltage and current, re-spectively; N represents the decimalequivalent of the binary input applied toIC

    1; and A represents the gain of the am-

    plifier stage IC2B

    . R1

    comprises the paral-lel combination of R

    1Aand R

    1B. Equation

    1 describes the circuits load current:

    Solving Equation 2 yields the circuitsoutput resistance:

    Using the component values shown,the circuits equivalent resistance ran