Design and Material Integration for an Advanced Wafer ... · PDF fileDesign and Material...

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Design and Material Integration for an Advanced Wafer-Level Chip Scale Package Glenn Rinne, Unitive Electronics Mike Paugh, Texas Instruments Jim Rosson, Texas Instruments Craig Schuckert, HD Microsystems

Transcript of Design and Material Integration for an Advanced Wafer ... · PDF fileDesign and Material...

Page 1: Design and Material Integration for an Advanced Wafer ... · PDF fileDesign and Material Integration for an Advanced Wafer-Level ... Craig Schuckert, HD Microsystems. Outline ... Introduction

Design and Material Integration for an Advanced Wafer-Level

Chip Scale PackageGlenn Rinne, Unitive ElectronicsMike Paugh, Texas InstrumentsJim Rosson, Texas Instruments

Craig Schuckert, HD Microsystems

Page 2: Design and Material Integration for an Advanced Wafer ... · PDF fileDesign and Material Integration for an Advanced Wafer-Level ... Craig Schuckert, HD Microsystems. Outline ... Introduction

Outline• Introduction• Package Requirements• Motivations• Design Solutions• Performance Metrics• Conclusion

Page 3: Design and Material Integration for an Advanced Wafer ... · PDF fileDesign and Material Integration for an Advanced Wafer-Level ... Craig Schuckert, HD Microsystems. Outline ... Introduction

Introduction• Unitive is a Wafer-Level Packaging

foundry with operations in North Carolina and Hsinchu, Taiwan.

• Recently released a new family of packages based on PSPI for low cost, high reliability WL-CSP applications.

• This overview describes the motivations and results of this development effort.

Page 4: Design and Material Integration for an Advanced Wafer ... · PDF fileDesign and Material Integration for an Advanced Wafer-Level ... Craig Schuckert, HD Microsystems. Outline ... Introduction

CSP on Organic

• Differential thermal expansion between the PCB and the CSP causes compressive, tensile, and shear strains in the interconnect.

SiCTE = 2.3E-6 K-1

Substrate5E-6 < CTE < 60E-6 K-1

T=300K

T=225K

T=425K

Page 5: Design and Material Integration for an Advanced Wafer ... · PDF fileDesign and Material Integration for an Advanced Wafer-Level ... Craig Schuckert, HD Microsystems. Outline ... Introduction

Package Requirements

• Coarse pitch• Low bump height• Elimination of underfill• Pb-free materials• Robust connections

• Redistribution• Electrical

performance• Low system level cost• Low radiation

Contemporary WL-CSPs require:

Page 6: Design and Material Integration for an Advanced Wafer ... · PDF fileDesign and Material Integration for an Advanced Wafer-Level ... Craig Schuckert, HD Microsystems. Outline ... Introduction

Bump Pitch• PCB costs drive chip size down and bump

pitch up.– Fine-pitch PCB footprints for CSP mounting

increase the cost of the whole PCB.• This multiplier provides significant leverage for

packagers

Page 7: Design and Material Integration for an Advanced Wafer ... · PDF fileDesign and Material Integration for an Advanced Wafer-Level ... Craig Schuckert, HD Microsystems. Outline ... Introduction

Bump Pitch Examples

50 micron pitch(40E3 bumps/cm2)

(12.6E6 bumps/wafer)

250 micron pitch

75 micron pitch

Page 8: Design and Material Integration for an Advanced Wafer ... · PDF fileDesign and Material Integration for an Advanced Wafer-Level ... Craig Schuckert, HD Microsystems. Outline ... Introduction

Bump Height• System size drives package height down and

bump height with it. (hpkg = 1 mm -> 0.625 mm)– Superhemispheric bumps previously desired to

minimize the strain in the bumps are too tall.– Short bumps will experience plastic deformation and

fatigue damage unless a stress buffer is used.• This drove the choice of PSPI

– Wide bumps transfer too much stress into the interface

Page 9: Design and Material Integration for an Advanced Wafer ... · PDF fileDesign and Material Integration for an Advanced Wafer-Level ... Craig Schuckert, HD Microsystems. Outline ... Introduction

Strain Asymmetry• Shear strains are nonuniform in the package.• Localized stress is higher in the polymer than in the solder.• PI adds compliance where it is needed, at the pad edge.

Page 10: Design and Material Integration for an Advanced Wafer ... · PDF fileDesign and Material Integration for an Advanced Wafer-Level ... Craig Schuckert, HD Microsystems. Outline ... Introduction

Generic Stress/Strain Cycle

ShearDisplacement(Strain)

Shear Force(Stress)

Elastic

Plastic

Creep

Page 11: Design and Material Integration for an Advanced Wafer ... · PDF fileDesign and Material Integration for an Advanced Wafer-Level ... Craig Schuckert, HD Microsystems. Outline ... Introduction

Thermomechanics of Temperature Cycling

LowTemperature

HighTemperature

SolderTemperatureCycle

ShearDisplacement(Strain)

Shear Force(Stress)

Elastic

Plastic

Creep

Page 12: Design and Material Integration for an Advanced Wafer ... · PDF fileDesign and Material Integration for an Advanced Wafer-Level ... Craig Schuckert, HD Microsystems. Outline ... Introduction

Bump Material• Portable applications subject packages to

impact and bending forces, yet Pb-free solders have higher modulus and absorb less stress.– Short, stiff bumps transmit the most stress

into the package and die. – The bumps must be well anchored.

Page 13: Design and Material Integration for an Advanced Wafer ... · PDF fileDesign and Material Integration for an Advanced Wafer-Level ... Craig Schuckert, HD Microsystems. Outline ... Introduction

Motivations• Our customers demanded a cost effective

WL-CSP that could meet the reliability requirements of portable electronics.

• Cost is becoming more a system concern than a component concern so materials must be selected for their total impact on system cost.

Page 14: Design and Material Integration for an Advanced Wafer ... · PDF fileDesign and Material Integration for an Advanced Wafer-Level ... Craig Schuckert, HD Microsystems. Outline ... Introduction

Unitive’s SolutionA family of PSPI passivated, Cu redistributed, 0.5 mm pitch CSPs

Page 15: Design and Material Integration for an Advanced Wafer ... · PDF fileDesign and Material Integration for an Advanced Wafer-Level ... Craig Schuckert, HD Microsystems. Outline ... Introduction

Package Options• Four package styles

have been qualified, depending on application requirements.– Each of these present

their own challenges • Stress• Process compatibility

Page 16: Design and Material Integration for an Advanced Wafer ... · PDF fileDesign and Material Integration for an Advanced Wafer-Level ... Craig Schuckert, HD Microsystems. Outline ... Introduction

BCB and HD PropertiesProperty HD4000 BCB

Dielectric Const 3.3 (1MHz) 2.65Breakdown Field (V/cm) > 2 X 106 3 x 106

Moisture Uptake (% wt.) 2 - 3 <0.2Cure Temp. (oC) 375 250Glass Trans. Temp. (Tg ) 325 >350CTE (ppm/C) 35 52

Tensile Strength (MPa) 200 87Elongation to break 45% 9%Young’s Modulus (GPa) 3.5 2.9Stress (MPa) 34 27Adhesion (General) Excellent ExcellentProcess Compatible with Cu Yes YesEase of Process (time variables; bakes; exp; etc Excellent Excellent

Page 17: Design and Material Integration for an Advanced Wafer ... · PDF fileDesign and Material Integration for an Advanced Wafer-Level ... Craig Schuckert, HD Microsystems. Outline ... Introduction

BCB and HD4000 ComparedProperty BCB HD4000

Tensile Strength Poor (80GPa) Excellent (200GPa)

Yield Strain Poor (9%) Excellent (45%)

Planarization Excellent Poor

Moisture Absorption Excellent (0.2%) Good (2%)

Relative Permittivity 3.3 2.65

Page 18: Design and Material Integration for an Advanced Wafer ... · PDF fileDesign and Material Integration for an Advanced Wafer-Level ... Craig Schuckert, HD Microsystems. Outline ... Introduction

Planarization• IC topology can be severe.

Page 19: Design and Material Integration for an Advanced Wafer ... · PDF fileDesign and Material Integration for an Advanced Wafer-Level ... Craig Schuckert, HD Microsystems. Outline ... Introduction

Bump on Pad

PI

Metal Pad

PI Outside I/O Passivation Cut PI Inside I/O Passivation Cut

BSE image

Page 20: Design and Material Integration for an Advanced Wafer ... · PDF fileDesign and Material Integration for an Advanced Wafer-Level ... Craig Schuckert, HD Microsystems. Outline ... Introduction

Double PI/RDL/Bump

Solder Sphere

Ti/Cu/Ni UBM

PI 2PI 1

Page 21: Design and Material Integration for an Advanced Wafer ... · PDF fileDesign and Material Integration for an Advanced Wafer-Level ... Craig Schuckert, HD Microsystems. Outline ... Introduction

Thick PI with RDL

<15 microns of Cu

PI 2

PI 1

Cu RDL

UBM

Solder

Page 22: Design and Material Integration for an Advanced Wafer ... · PDF fileDesign and Material Integration for an Advanced Wafer-Level ... Craig Schuckert, HD Microsystems. Outline ... Introduction

Mounted CSP Reliability Test SuiteTest Condition Criteria Sample

Size

Temperature Cycle

–40 to +125°C, 1 cycle/hr, 15 min. ramp, 1000 cycles,

R<1.2X from R0 36

Thermal Shock –40 to +125°C, 2 cycle/hr, 5 min. ramp, 500 cycle minimum

R<1.2X from R0 36

Drop Test 0.5m, 3 axes, ε > 0.002, measured impact 10 drops,

R<1.2X from R0 5

Key Push 100 cycle/min, 20K cycles, Force = 20N, Displacement = 2.7mm,

R<1.2X from R0 5

Three-point Bend

Strain Rate 5 mm/min, 100mm span

R<1.2X from R0 (35mm Maximum)

5

Page 23: Design and Material Integration for an Advanced Wafer ... · PDF fileDesign and Material Integration for an Advanced Wafer-Level ... Craig Schuckert, HD Microsystems. Outline ... Introduction

Reliability Test ResultsTest Conditions Lot 1

SS/F Lot 2 SS/F

Lot 3 SS/F

Life Test

155°C, 300 Hrs. 116/0 116/0 116/0

HAST 130ºC, 85%RH, 33.5 psia, 96 Hrs.

80/0 80/0 80/0

Autoclave 121°C, 15 psia, 100%RH, 240 Hrs.

80/0 80/0 80/0

Temp Cycle 55ºC to 125ºC, 500 cycles

80/0 79/0 79/0

Board Level Temp Cycle

-40ºC to 125ºC, 1500 cycles, 5ºC/ min Ramp Rate, 12 min dwell

36/0

Three Point Bend

Strain Rate 5 mm/min., 85 mm span

8/0

Keypush 100 cycles/min, 1300µ ª d = 2.7 mm max

8/0

Drop Test 50 cm 8/0 HT Storage Life

150C/1000Hrs 45/0 45/0 45/0

HT Storage Life

170C/420Hrs 45/0 45/0 45/0

Moisture Sensitivity

Level 1 @ 240C 12/0 12/0 12/0

Page 24: Design and Material Integration for an Advanced Wafer ... · PDF fileDesign and Material Integration for an Advanced Wafer-Level ... Craig Schuckert, HD Microsystems. Outline ... Introduction

Life Test Results

Page 25: Design and Material Integration for an Advanced Wafer ... · PDF fileDesign and Material Integration for an Advanced Wafer-Level ... Craig Schuckert, HD Microsystems. Outline ... Introduction

Thermocycle Failure Mode• Fatigue cracks in the solder rather than in

the dielectric.

Page 26: Design and Material Integration for an Advanced Wafer ... · PDF fileDesign and Material Integration for an Advanced Wafer-Level ... Craig Schuckert, HD Microsystems. Outline ... Introduction

Conclusion• A new family of wafer-level chip scale

packages has been introduced using PSPI to provide better thermomechanical reliability.