BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to...

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BTeV Pixel Substrate C. M. Lei November 2001

Transcript of BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to...

Page 1: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

BTeV Pixel Substrate

C. M. LeiNovember 2001

Page 2: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum, 10E-4 torr or better Serve as a Dimensionally Stable Support Serve as a Heat Sink to remove heat 60W

(0.5W/cm^2)

Page 3: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Material Spec.

Rad-Hardness and Low Rad Length Low Out-gassing Rate Light and Stiff High Thermal k and Low cte

Page 4: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Design Approach Address Cooling Needs First Heat Removed Basically by

Conduction to Coolant: Q = k*A* T/ L

Maximize k*A while Keeping Thickness L Small

Page 5: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Design Types

Cooling Tubes Array with Added Substrate (Fuzzy C Design)

Cooling Chamber as Substrate (Beryllium Design)

Page 6: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Cooling Tubes Array with Added Substrate

Need Manifolds and many Joints Need to build up Substrate on Array Allow Porous Substrate – Low Rad L Seamless Tubing Array Generate a Temp Drop across the

Array/Substrate Interface Effective Heat Transfer Area limited

Page 7: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Cooling Chamber as Substrate

Need to Machine Integral Cooling Channels

Need to make a Large-Surface Quality Joint at the Interface

Huge Area for Heat Transfer Wall = Substrate, Min. Thickness Allow Smaller Temp Drop due to 1 less

Joint Impedance

Page 8: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Material Choices

Material K, in-plane K, out-of-plane cte, in-plane cte, out-of-plane Rad L E DensityW/m-K W/m-K ppm/K ppm/K cm Gpa g/cc

Be 145.0 145.0 11.6 11.6 35.4 290.0 1.85AlBeMet 210.0 210.0 13.9 13.9 16.1 200.0 2.10diamond 1500.0 1800.0 1.8 1.8 12.0 896.6 3.27Aluminum 237.0 237.0 23.4 23.4 8.9 69.0 2.76

C-C 185.0 25.0 2.0 2.0 19.0 4.8 2.25C-fiber composite, uni-tape 520.0 0.8 -1.1 0.2 25.0 606.0 1.87SiC 300.0 300.0 2.2 2.2 8.0 460.0 3.21pyrolitic graphite 400.0 3.5 0.5 6.5 19.4 20.0 2.20peek 0.2 0.2 4.7 4.7 35.0 3.6 1.32CoolPoly RS012 (PPS) 10.0 10.0 10.0 20.0 21.0 1.70

SiC foam, 8% packing ratio 11.0 11.0 2.2 2.2 99.0 2.8 0.26RVC foam (vitreous C), 3% pr 0.5 0.5 2.2 2.2 854.0 0.1 0.05poco-foam, 25% pr 80.0 150.0 2.5 2.5 76.0 20.7 0.56fuzzy C, 5% pr, 100% contact 55.0 1.0 1.0 406.7 50.0 0.11

Glassy C 5.0 5.0 3.0 3.0 25.9 30.0 1.65peekBeAl

Page 9: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Fuzzy Carbon Design All Carbon Heat Exchanger - Non-permeable Leak-tight

Glassy Carbon Tubing, Manifold and Joints Tubing Flattened in Cooling Area and Bonded together to

form a Stiffened Array Radial high k Carbon fibers bonded to Array with Intimate

Carbon Joint Pixel Sensors to be supported directly by fuzzy carbon

fibers Leak-tight Carbon Joints Toughened by Resin mixed with

Carbon Nanotubes (Preferred, Regular Epoxy may be allowed to use)

Page 10: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Radial Fintubing Array

Top View

Bottom View

Page 11: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Ovalized Tubing Array

Ovalized C tubing precursor fuses together for greater stiffness

Monolayer of C fiber applied to ovalized tube array

Page 12: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Carbon Coupon

Toughening and fuzzy C interface not illustrated here

Page 13: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Coupon Test Article

Al ManifoldWith epoxy joints

C ManifoldWith C joints

Page 14: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Problems Before Tubing and Joint Broken Many fibers not in contact with Tubing

Small diameter thin wall tubing Tubing Array used as the sole Support Brittle carbonized joint between tubing

and manifold (just good for sealing purpose)

Page 15: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Prospective Solutions Use larger diameter, thicker wall tubing, and

fused together to form a solid cooling array Use C superstructures next to cooling array and

connect them to manifolds to form a rectangular back-frame support

Toughen the manifold/tubing joints with carbonized resin or regular epoxy

Radial C fibers are sure in contact with tubing by forming a solid cooling array

Page 16: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Be Substrate Design

4X 0.5-mm-Deep Channels Cooling Strips along the Channels Overall Thickness 3.066 mm Ave. Rad L per Plane = 0.33%

Page 17: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Be Substrate – Bottom Plate

Page 18: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Be Substrate – Top Plate

Page 19: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Be Substrate – Assembly

Page 20: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Flow Test on Be Substrate

@ 960 cc/min

Page 21: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Loading on Bond Area

Coolant Contact Area = 8.9 in^2For P = 80 psi, F = 710 lbf

Bonding Area = 5.8 in^2Tensile Stress in Bond = 122 psi

If Peeling occurs, (assume all forces acting on 1 line)PIW =150

Page 22: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Choices of Structural AdhesivesVendor Loctite 3M Ciba-Geigy Ciba-Geigy Bacon Emerson

Adhesive Hysol EA9394 DP460 off-whiteAradite 2011 TDR 1100 LCA-48 Eccobond 285Activator BA105

Filler 24LV

Curing Temp C 20 20 20 82 100 25Curing Time hrs 2

Work Life minutesViscosity cp 160000 80000 45000 13000 25

Modulus Msi 0.396Gravity 1.36 1.75 2.18

Hardness Shore D 77 80 95Glass TT C 193

Tensile Strength psi 6675 4800 9100Lap Shear St. psi 4200 4500 2560 3820 2000

T-peel PIW 5 50 28Elongation % 1.66 9 3.6

CTE ppm/C 55.6 59 85 25Thermal K W/M-K 0.331 0.015 1.22

outgassing TML 0.848CVCM 0.002

suggested by Axsys, Hysol Hardric Peregrine

Page 23: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,
Page 24: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

FEA on Be Substrate

Heat Load from ROC = .5 W/cm^2 Heat Load from Sensor = .025 W/cm^2

Constant Coolant Temp = -15C Coolant Pressure = 40 psi Convective film Coef. = 2000 W/m^2*C Radiation Effect Ignored (< 1%) Surrounding Temp = 20C

Page 25: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Temp Profile

3.8C

Coolant Temp = -15C

Page 26: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Temp Profile

Coolant Temp = -15C

3.8C

Page 27: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Temp Profile

Page 28: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Displacement UY

UY = 0 at 4 corners

.071

Page 29: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Displacement UX

UX = 0 this side

.018

Page 30: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Displacement UZ

.025 mm

UZ = 0 this side

Page 31: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Resultant Stresses

(16,710 psi)

Be Sy = 240 MPa

Page 32: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Resultant Stresses in Epoxy Layers

(5,550 psi)

Stresses can be lowered significantlyIf epoxy with lower E is used.

E = 1 Msi

Page 33: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Resultant Stresses in ROC

(5,440 psi)

Sy = 120 MPa

Page 34: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Resultant Stresses in Sensor

(5,470 psi)

Sy = 120 MPa

Page 35: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Temp Profile of 8-chip Module

Coolant Temp = -15C

In this model, bump bonds between ROC & sensor are added.Kapton HDI cable with epoxy are also added.

Results of temperatures, displacements and stressesAre somewhat similar and less because of smaller size of model.

Page 36: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Temp Profile on ROC

Page 37: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Resultant Stresses in HDI Cable

(290 psi)

Tensile stress of Kapton= 24,000 psi

Page 38: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Resultant Stresses in Bump Bonds

Bump bonds (0.01mm DIA, 0.01mm high) were modeled with Beam Elements

Min Principle Stress = -104 Mpa (15,000 psi) Max Principle Stress = +189 Mpa (27,400 psi)

Tensile Strength of Indium = 1.6 Mpa ~13.7 Mpa (?)

Stresses can be reduced significantly if 0.5mm wide epoxy can be glued around the ROC

Reinforced Min Principle Stress = -71 Mpa (10,300 psi) Reinforced Max Principle Stress = +44 Mpa (6,380 psi)

Page 39: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Resultant Stresses in Reinforced Epoxy

(4.600 psi)

(0.5mm wide epoxy around ROC perimeter)

Page 40: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

FEA Conclusions on Be Substrate

For h = 2000, Temperature Distribution OK For T = 35C, Thermal Displacements OK Stresses on Epoxy is High Stresses on Bump Bond is not Acceptable

Displacements and Stresses can be reduced if Smaller T allowed

Page 41: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Choices of Thermal Conductive Epoxy

Vendor Master Bond Master Bond Emerson & C Emerson & C Emerson & C Emerson & C Emerson & C NeumannAdhesive EP21 EP21Stycast 2850KTStycast 2850KTStycast 2850FT-FRStycast 2850FTStycast 2850FT NEE001Activator TDCAOHT TCHT-1 24LV 9 9 9 24LV

Filler

Curing Temp C 20 20 25 25 25 25 25Curing Time hrs 24 40 12 20 20 20 12

Work Life minutes 75 45 30 45 45 45 30Viscosity cp <60000 <60000 22000 174000 80000 58000 5600

Modulus Msi 0.39 0.47Gravity 2.7 2.8 2.33 2.29 2.19

Hardness Shore D 92 94 92 96 92Bond Strength psi (8700} {10200} 3300

Glass TT C 40 68 86 68

CTE ppm/C 36 19 24.3 20.3 21 35 39Thermal K W/M-K 1.44 1.44 2.29 2.68 1.23 1.25 1.02 0.24

outgassing TML 0.55% 0.34% 0.25% 0.39%CVCM 0.02% 0.01% 0.01% 0.00%

Vendor Tra-Con Tra-Con Tra-Con Tra-Con Tra-Con Tra-ConAdhesive 2151 2154Supertherm2004Supertherm2005Supertherm2009 816H01Activator

Filler a-alumina boron nitrile

Curing Temp C 25 25 25 25 25 25Curing Time hrs 24 24 24 24 24 24

Work Life minutes 90 45 180 45 90 180Viscosity cp 40000 33000 33000 33000 460000 5000

Modulus MsiGravity 2.3 2.3 2.3 2.3 1.7 1.3

Hardness Shore D 90 90 90 90 80 80Bond Strength psi 7500 2000

Glass TT C 60 48 48 48 54

CTE ppm/C 26 26 26 26 19 40Thermal K W/M-K 0.95 0.88 1.01 1.06 2.7 2

outgassing TML pass NASA pass NASA pass NASA 0.60%CVCM 0.02%

strength @65C

Page 42: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Thermal Cycle Test

After 5 cycles between –15C and 20C, all 3 epoxies stay OK.

Page 43: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Other Tubing-Array Designs

Page 44: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Rad L % of Designs

Thickness per Plane in mm

tubing wall coolant substrate C-CBe 1.13 fuzzy C 0.15 0.58 0.90 pocofoam 0.20 0.29 1.45 pocofoam+cc 0.10 0.53 1.32 0.10

Rad L % per Plane

tubing wall coolant substrate C-C TotalBe 0.32% 0.33%fuzzy C 0.06% 0.08% 0.02% 0.16%pocofoam 0.08% 0.04% 0.19% 0.31%pocofoam+cc 0.03% 0.07% 0.17% 0.05% 0.33%

Page 45: BTeV Pixel Substrate C. M. Lei November 2001. Design Spec. Exposed to >10 Mrad Radiation Exposed to Operational Temp about –15C Under Ultra-high Vacuum,

Future Plans

Run Thermal Test and verify effective h with cooling-strip effect included

Try to lower coolant temp to –10C or so Evaluate and Select Epoxies Do Thermal Cyclic Test on Si Dummies

with Bump-Bond Do Bump-bonds Testing Works on other Designs