SiC Pulsed Power Semiconductor Device Technology
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www.isl.eu © ISL 2017 Pulsed power semiconductor device technology Innovative electronic devices based on silicon carbide ISL develops electronic devices based on silicon carbide (SiC), the wide band-gap semiconductor material, with special focus on pulsed power ap- plications. Owing to its outstanding physical properties, SiC by far outper- forms the standard silicon (Si) semiconductor material and allows the fab- rication of devices with a blocking capability far beyond 10 kV and a tenfold to hundredfold higher power density. Therefore, SiC bipolar devices such as PiN diodes and thyristors are regarded as key elements for future electric weapon and protection systems. ISL developed the fabrication technology of different types of SiC thyris- tors within the framework of numerous research projects. ISL was the first to demonstrate the light triggering of SiC thyristors using UV LEDs [1], to- gether with the Ampère laboratory, its partner at INSA Lyon. Based on a 14-layer mask set, ISL developed the entire fabrication process for gate turn-off (GTO) thy- ristors.These 10 kV-class devices possess an in- novative and very efficient (> 96%) etched de- vice termination (GEJTE) [2]. Furthermore, ISL is about to develop and investigate thyristors with so-called amplifying gate structures with a focus on large-area, high-current devices. ISL – French-German Research Institute of Saint-Louis Scientific contact: [email protected] • Business Development Office: [email protected] 5 rue du Général Cassagnou • 68301 Saint-Louis • France A 100 m 2 clean room environment is necessary for the development and validation of innovative device con- cepts based on wide band-gap semi- conductors. ISL now has at its disposal a high-temperature furnace to be used for ion implantation activation anneal- ing at a temperature of up to 2000°C besides standard equipment such as photolithography. Potentially, this equipment will enable ISL to extend its capabilities to the growth of graphene or the processing of diamond. Applications • Advanced electric weapon systems such as railguns • Electromagnetic protection systems • Fast short-pulse applications References [1] N. Dheilly, et al. Optical triggering of SiC Thyristors using UV LEDs Electronics Letters, vol. 47, 2011 [2] G. Pâques, et al. High-voltage 4H-SiC thyristors with a graded etched junction termination extension IEEE Electron Device Letters, vol. 32, 2011 Technical features Devices under investigation • UV light-triggered SiC thyristors • 10 kV-class gate turn-off (GTO) thyristors • 1.2 kV amplifying gate thyristors SiC gate turn-off thyristor 100 mm SiC wafer with amplifying gate thyristors
Transcript of SiC Pulsed Power Semiconductor Device Technology
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Pulsed power semiconductor device technology
Innovative electronic devices based on silicon carbide
ISL develops electronic devices based on silicon carbide (SiC), the wide band-gap semiconductor material, with special focus on pulsed power ap-plications. Owing to its outstanding physical properties, SiC by far outper-forms the standard silicon (Si) semiconductor material and allows the fab-rication of devices with a blocking capability far beyond 10 kV and a tenfold to hundredfold higher power density. Therefore, SiC bipolar devices such as PiN diodes and thyristors are regarded as key elements for future electric weapon and protection systems.
ISL developed the fabrication technology of different types of SiC thyris-tors within the framework of numerous research projects. ISL was the � rst to demonstrate the light triggering of SiC thyristors using UV LEDs [1], to-gether with the Ampère laboratory, its partner at INSA Lyon. Based on a
14-layer mask set, ISL developed the entire fabrication process for gate turn-off (GTO) thy-ristors. These 10 kV-class devices possess an in-novative and very ef� cient (> 96%) etched de-vice termination (GEJTE) [2]. Furthermore, ISL is about to develop and investigate thyristors with so-called amplifying gate structures with a focus on large-area, high-current devices.
ISL – French-German Research Institute of Saint-Louis Scientifi c contact: [email protected] • Business Development Offi ce: [email protected] rue du Général Cassagnou • 68301 Saint-Louis • France
A 100 m2 clean room environment is necessary for the development and validation of innovative device con-cepts based on wide band-gap semi-conductors. ISL now has at its disposal a high-temperature furnace to be used for ion implantation activation anneal-ing at a temperature of up to 2000°C besides standard equipment such as photolithography. Potentially, this equipment will enable ISL to extend its capabilities to the growth of graphene or the processing of diamond.
Applications
• Advanced electric weapon systems such as railguns
• Electromagnetic protection systems
• Fast short-pulse applications
References[1] N. Dheilly, et al.
Optical triggering of SiC Thyristors using UV LEDsElectronics Letters, vol. 47, 2011
[2] G. Pâques, et al.High-voltage 4H-SiC thyristors with a graded etched junction termination extensionIEEE Electron Device Letters, vol. 32, 2011
Technical features
Devices under investigation• UV light-triggered SiC thyristors
• 10 kV-class gate turn-off (GTO) thyristors
• 1.2 kV amplifying gate thyristors
SiC gate turn-off thyristor
100 mm SiC wafer with amplifying gate thyristors
