Preliminary LumiCAL FEE Specification Presented by Alexander Solin NC PHEP [email protected] FCAL...

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Transcript of Preliminary LumiCAL FEE Specification Presented by Alexander Solin NC PHEP [email protected] FCAL...

  • Preliminary LumiCAL FEE SpecificationPresented by Alexander SolinNC [email protected] collaboration meeting, February 12-13, 2006,Krakow (INP PAS), Poland

    February 12-13, 2006, Krakow A.Solin

  • ContentsPreliminary LumiCAL FEE SpecificationASICs for FCAL detectors prototypes (main parameters measurement setup, bench and beam tests)

    February 12-13, 2006, Krakow A.Solin

  • Preliminary LumiCAL FEE Specification

    February 12-13, 2006, Krakow A.Solin

  • Estimation of the pad Si-sensor capacitancies

    February 12-13, 2006, Krakow A.Solin

    295pF/1413 sq. mm

    42pF/201 sq. mm

    15 deg

    15 deg

    80 mm

    280 mm

    280 mm

    80 mm

    10 pads

    22 pads

    B

    B

    98pF/471 sq. mm

    137pF/655 sq. mm

    Cmax/Cmin=295pF/42pF=7

    Rough segmentation parts

    Fine segmentation part

  • Estimation of the strip Si-sensor capacitancies

    February 12-13, 2006, Krakow A.Solin

    30 deg

    80 mm

    280 mm

    3 deg

    80 mm

    280 mm

    64 concentric strips

    120 radial strips

    B

    B

    28pF/133 sq.mm

    395pF/1885 sq. mm

    For the bonded concentric strips: Cmin=168 pF, Cmax=571 pF

    95pF/455 sq.mm

    Cmax/Cmin=395pF/28pF=14

    The large difference of capacitance is problem for a preamplifier noise optimization.

  • Estimation of the maximum Si-sensor charge collection(1-1000)MIP channel signal rangefrom B.Pawliks talk

    February 12-13, 2006, Krakow A.Solin

    1

    Cfb=3.2pF

    2V

    CSP

    1000MIP

  • LumiCal Si-sensor parameters

    February 12-13, 2006, Krakow A.Solin

  • LumiCAL ASIC requirements

    February 12-13, 2006, Krakow A.Solin

  • ASIC technologiesNext four pictures can help to estimate noises of frond end electronics. Calculations are done for Bi-JFET technology (see picture).

    Same calculations can be done for other technologies. Preamplifier noises will be similar to the presented calculations.

    February 12-13, 2006, Krakow A.Solin

  • Capacitance of Si-sensor vs its area 572pF28pF

    February 12-13, 2006, Krakow A.Solin

  • ENC vs preamplifier power consumption 8000e

    February 12-13, 2006, Krakow A.Solin

  • ENC vs shaping time8000e

    February 12-13, 2006, Krakow A.Solin

  • ENC vs Si-sensor Capacitance572pF

    February 12-13, 2006, Krakow A.Solin

  • ASICs for FCAL detectors prototypes(main parameters measurement setup, bench and beam tests)

    February 12-13, 2006, Krakow A.Solin

  • Tetrode-BT, Tetrode-JFET ASICs1996 year, CMS ECAL

    Two designs CSP were made in Minsk NC PHEP with slightly different circuits for amplifying of signals from Hamamtsu R2149 vacuum phototetrode:TETRODE-BT with bipolar input transistor;TETRODE-JFET with p-JFET input transistor.

    February 12-13, 2006, Krakow A.Solin

  • Design requirements to Tetrode CSPsHamamtsu R2149 parameters:

    CSP requirements:

    February 12-13, 2006, Krakow A.Solin

  • CSP based on Tetrode JFETENC=320e+18e/pF, Tp=800ns

    February 12-13, 2006, Krakow A.Solin

    Wykres2

    489.6891712957

    326.3275571756

    322.145457262

    319.8688109209

    ENC

    Vsupply, V

    ENC, e

    ENC vs Vsupplies at Cd=0Tetrode JFET based CSP

    ENC at Vsupplies=(6-9)V and 0pF

    Cd=0

    VccENCGainVsVn_stdVn_ICVn_cableQin, fCfC, eClCrTpTmeasure

    6489.689171295725.7325.732.122.01595238040.65616250874

    7326.327557175627.9527.951.61.45933683570.65616250838

    8322.14545726228.128.11.591.44836597590.65616250804122682835

    9319.868810920928.328.31.591.44836597590.65616250827

    Cd=0

    VccENCGainVsVn_stdVn_ICVn_cableQin, fCfC, eCrClTpTmeasure

    0318.294210585928.4456.881.591.44836597590.65626250804122682804

    11.222558.290952909328.16556.332.62.51588235020.65626250122698820

    22.58691.909713481927.8355.663.153.08093557220.65626250122710832

    47.881157.576105016627.03554.075.055.00721119990.65626250122741863

    82.291806.650397594326.0252.047.557.52144693530.65626250122775897

    ENC at Vsupplies=(6-9)V and 0pF

    Gain

    Vsupply, V

    ENC, e

    Gain vs Vsupplies at Cd=0

    ENC

    Vsupply, V

    ENC, e

    ENC vs Vsupplies at Cd=0Tetrode JFET based CSP

    ENC

    Cd, pF

    ENC, e

    ENC vs Cd at Vsupplies=+/-8VTetrode JFET based CSP

    Wykres3

    318.2942105859

    558.2909529093

    691.9097134819

    1157.5761050166

    1806.6503975943

    ENC

    Cd, pF

    ENC, e

    ENC vs Cd at Vsupplies=+/-8VTetrode JFET based CSP

    ENC at Vsupplies=(6-9)V and 0pF

    Cd=0

    VccENCGainVsVn_stdVn_ICVn_cableQin, fCfC, eClCrTpTmeasure

    6489.689171295725.7325.732.122.01595238040.65616250874

    7326.327557175627.9527.951.61.45933683570.65616250838

    8322.14545726228.128.11.591.44836597590.65616250804122682835

    9319.868810920928.328.31.591.44836597590.65616250827

    Cd=0

    VccENCGainVsVn_stdVn_ICVn_cableQin, fCfC, eCrClTpTmeasure

    0318.294210585928.4456.881.591.44836597590.65626250804122682804

    11.222558.290952909328.16556.332.62.51588235020.65626250122698820

    22.58691.909713481927.8355.663.153.08093557220.65626250122710832

    47.881157.576105016627.03554.075.055.00721119990.65626250122741863

    82.291806.650397594326.0252.047.557.52144693530.65626250122775897

    ENC at Vsupplies=(6-9)V and 0pF

    0

    0

    0

    0

    Gain

    Vsupply, V

    ENC, e

    Gain vs Vsupplies at Cd=0

    0

    0

    0

    0

    ENC

    Vsupply, V

    ENC, e

    ENC vs Vsupplies at Cd=0Tetrode JFET based CSP

    0

    0

    0

    0

    0

    ENC

    Cd, pF

    ENC, e

    ENC vs Cd at Vsupplies=+/-8VTetrode JFET based CSP

  • AS01PDA, AS01T ASICs2002 year, TESLA THCAL

    Next AS01PDA ASIC were designed and manufactured in Minsk NC PHEP for amplifying of signals from photodetectors.The AS01PDA ASIC is a development of the Tetrode BT design line. It additionally contains a shaper and shaper gain control stage.

    February 12-13, 2006, Krakow A.Solin

  • AS01PDA main parameters

    February 12-13, 2006, Krakow A.Solin

  • AS01PDA block diagram

    February 12-13, 2006, Krakow A.Solin

    Box sizes with text.Hit to start anew line of text.

    Preamplifier- Shaper- 50 Ohm Driver

    Reference level (Vref)

    Gain control(Gain_ctrl)

    Signal input (In)

    Ct 0.2pF

    Test input (In_t)

    Positive output (Op)

    Negativeoutput(On)

    Bias block

  • AS01PDA testsOctober, 2002 Output signals were digitalized with theTDS3032 scope.

    February 12-13, 2006, Krakow A.Solin

  • AS01PDA noise curvesFebruary, 2006 Noise is measured with the Infiniium 54830B scope.

    February 12-13, 2006, Krakow A.Solin

    Wykres1

    1270.6571341.511445.7471523.6441547.797

    1277.2061366.4211468.3321527.2971550.699

    1404.081451.1161524.0261587.7111612.332

    1723.3331744.3981811.4871844.0821879.057

    2068.2422097.6352120.3352130.5222152.839

    4100.6024059.523940.5883899.0283884.099

    5V

    6V

    7V

    8V

    9V

    Trend line

    Cd, pF

    ENC, e

    ENC vs Cd and Vcc

    ENC = 14,123e/pF + 1000e

    6V

    CdENCGainVsVn_stdVn_ICVn_cableVn_oscQin, fCfC, e

    01169.75304643553.074930.7490.7020.57549978280.4020.334106250

    3.5671170.01940097733.074230.7420.7020.57549978280.4020.334106250

    6.2261173.94958534233.070430.7040.7030.57671916910.4020.334106250

    11.2221201.53360785283.069430.6940.7140.5900779610.4020.334106250

    22.581275.59410736783.044130.4410.740.62128576360.4020.334106250

    47.881481.84534450583.014430.1440.820.7146999370.4020.334106250

    82.291872.76703766072.946129.4610.970.88277743510.4020.334106250

    104.622286.46596016362.904329.0431.1361.06249329410.4020.334106250

    212.23806.70999729842.627426.2741.651.60027997550.4020.334106250

    346.90.4020.334106250

    728.30.4020.334106250

    1028.70.4020.334106250

    0.4020.334106250

    6V

    0

    0

    0

    0

    0

    0

    0

    0

    0

    ENC

    Cd, pF

    ENC, e

    ENC vs Cd at Vcc=+6V

    6V_diff

    0

    0

    0

    0

    0

    0

    0

    0

    0

    Gain

    Gain

    5V_int

    CdENCGainVsVn_stdVn_ICVn_cableVn_oscQin, fCfC, e

    01385.67106997278.67986.792.011.92419827460.5810.456106250

    3.5671416.7133712578.67386.732.051.9659448110.5810.456106250

    6.2261419.45853394298.6786.72.0531.96907287830.5810.456106250

    11.2221448.91760465668.6686.62.092.0076202330.5810.456106250

    22.581544.04289445258.63186.312.212.13226147550.5810.456106250

    47.881769.83465652658.56585.652.4942.42538141330.5810.456106250

    82.292177.89037341368.41784.172.992.93300852370.5810.456106250

    104.622454.5173430648.31383.133.3163.26470442770.5810.456106250

    212.23982.17892414597.6976.94.9344.89967294830.5810.456106250

    346.90.5810.456106250

    728.30.5810.456106250

    1028.70.5810.456106250

    0.5810.456106250

    5V_int

    0

    0

    0

    0

    0

    0

    0

    0

    0

    ENC

    Cd, pF

    ENC, e

    ENC vs Cd at Vcc=+6V

    5V_diff_no signal

    CdENC_5VENC_7VGainVsVn_stdVn_ICVn_cableVn_oscQin, fCfC, e

    01050.2905771671118.1266.1861.81.191.03852732270.5810.456106250

    6.2261052.50458357251143.1986.16761.671.191.03852732270.5810.456106250

    11.2221065.31143666721160.4266.1661.61.21.0499709520.5810.456106250

    22.581162.87040333811259.3486.1361.31.281.14054329160.5810.456106250

    47.881363.32091414651387.2245.9459.41.421.29570019680.5810.456106250