EE-463 STATIC POWER CONVERSION-I

Power Semiconductor DevicesOzan Keysan

keysan.me

O�ce: C-113 • Tel: 210 7586

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Diode

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Power Diode (>50 A)

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Ideal Diode

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Ideal DiodeV-I Characteristics

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Ideal DiodeV-I Characteristics

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Practical DiodeImportant Parameters

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Practical DiodeImportant Parameters

Forward Voltage

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Practical DiodeImportant Parameters

Forward Voltage

Reverse Break-down Voltage

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Practical DiodeImportant Parameters

Forward Voltage

Reverse Break-down Voltage

On-resistance

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Practical DiodeImportant Parameters

Forward Voltage

Reverse Break-down Voltage

On-resistance

Turn-on, turn-o� times (forward, reverse-recovery)

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Practical Diode: V-I Characteristics

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A few Data-sheetsSTTH6012, 1200V, 60A Diode

FERD20S100S, 100V, 20 A Diode

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Reverse Biased Diode

More info

Er�ksson, Fundamentals of Power Electron�cs, Ch4 9 / 53

Forward Biased Diode

More info

Er�ksson, Fundamentals of Power Electron�cs, Ch4 10 / 53

Diode Switching WaveformsTurn-on transient

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Diode Switching WaveformsTurn-o� transient

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Diode Switching WaveformsTurn-o� transient

Reverse current is required to remove carrier charges13 / 53

Reverse RecoveryDiode conducts a reverse current during turn-o�

: Reverse recovery time, : Reverse recovery currenttrr Irr 14 / 53

Reverse Recovery

Softness Factor

Reverse recovery

Fast diode vs Slow Diode15 / 53

Types of Power Diodes

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Types of Power DiodesStandard Recovery

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Types of Power DiodesStandard Recovery

Fast (ultra-fast) Recovery

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Types of Power DiodesStandard Recovery

Fast (ultra-fast) Recovery

Schottky Diode

Majority carrier (due to metal layer)

No recovered charge,

Limited to low voltage (<100V)

= 0trr

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Types of Power Diodes

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Types of Power Diodes

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Types of Power Diodes

What is the relation between and ?Vmax VF 17 / 53

Losses

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Losses

Conduction Losses

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Losses

Conduction LossesIncreases with current

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Losses

Conduction LossesIncreases with current

Switching Losses

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Losses

Conduction LossesIncreases with current

Switching LossesIncreases with turn-on, turn-o�-time

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Losses

Conduction LossesIncreases with current

Switching LossesIncreases with turn-on, turn-o�-time

Increases with switching frequency

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Switching LossesLinearized

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LossesExtra Reading Material

Fast, Faster, Fastest

Power Losses, Thermal Considerations

Calculation of conduction losses in a power recti�er

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Thyristor

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Thyristor

A diode with a gate terminal!

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Thyristor

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Thyristor

Four layer PNPN semiconductor (and two-transistorequivalent circuit)

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Thyristor

A diode that you can delay on-state with gatesignal(pulse)

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Thyristor

A diode that you can delay on-state with gatesignal(pulse)

but no control while turning-o�

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Thyristor

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Thyristor

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Thyristor: Controlled Recti�er

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Thyristor: Controlled Recti�er

More on thyristor recti�ers next week!26 / 53

Thyristor

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ThyristorHas the highest current and voltage rating among other devices

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ThyristorHas the highest current and voltage rating among other devices

Slow switching device (eg compared to MOSFET)

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ThyristorHas the highest current and voltage rating among other devices

Slow switching device (eg compared to MOSFET)

Latching switch (can be turned on by Ig, but cannot be turned o� )

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ThyristorV-I Characteristics

Reverse Blocking

Forward Blocking

Forward Conducting

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V-I Characteristics

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V-I Characteristics

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Types of Thyristors

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Types of ThyristorsSCR (Silicon Controlled Recti�er)

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Types of ThyristorsSCR (Silicon Controlled Recti�er)

TRIAC, DIAC

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Types of ThyristorsSCR (Silicon Controlled Recti�er)

TRIAC, DIAC

GTO (Gate Turn-O� Tyhristor)

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GTOs

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GTOs

4500 V, 3000 A GTO

Used at very high power levels33 / 53

GTOsFully contrallable switch

Can be turned-on and turned-o�

Turn-on achieved by positive current pulse

Turn-o� achieved by negative current pulse

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Types of ThyristorsTRIAC

Bi-directional device

TRIACs can be triggered by positive or negativecurrent

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Types of ThyristorsTRIAC: Two anti-parallel thyristors

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Datasheet Exercise50 A - 1200 V automotive grade SCR Thyristor

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MOSFET

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MOSFETMetal-Oxide Semiconductor Field-E�ect Transistor

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MOSFETMetal-Oxide Semiconductor Field-E�ect Transistor

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MOSFET

n+ n+

p

x

L

Source DrainGate

Body

Oxide

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MOSFETV-I Characteristics

To be discussed more in detail throughout the semester 40 / 53

MOSFETBody Diode

Power MOSFET Basics41 / 53

Equivalent Circuit

Cgs: large, constant

Cgd: small, highly nonlinear

Cds: intermediate, nonlinear42 / 53

MOSFET Comparison

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MOSFET

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MOSFET

Fast device (ten to hundreds kHz)

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MOSFET

Fast device (ten to hundreds kHz)

Easy to drive

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MOSFET

Fast device (ten to hundreds kHz)

Easy to drive

Blocking voltage is usually <500 V

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MOSFET

Fast device (ten to hundreds kHz)

Easy to drive

Blocking voltage is usually <500 V

Positive Temperature coe�cient (easy to parallel)

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MOSFET

Fast device (ten to hundreds kHz)

Easy to drive

Blocking voltage is usually <500 V

Positive Temperature coe�cient (easy to parallel)

Body diode can conduct the full rated current (but usually slow)

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MOSFET

Fast device (ten to hundreds kHz)

Easy to drive

Blocking voltage is usually <500 V

Positive Temperature coe�cient (easy to parallel)

Body diode can conduct the full rated current (but usually slow)

Switching time determined by charging/discharging gatecapacitors

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IGBT

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IGBTInsulated-Gate Bipolar Transistor

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IGBTInsulated-Gate Bipolar Transistor

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IGBT

IGBT

IGBT, when to use them?

IGBT or MOSFET? 46 / 53

IGBT

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IGBTSlower compared to MOSFET (<20-30kHz)

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IGBTSlower compared to MOSFET (<20-30kHz)

Lower on-resistance

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IGBTSlower compared to MOSFET (<20-30kHz)

Lower on-resistance

Can withstand higher voltages (upto 1700V)

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IGBTSlower compared to MOSFET (<20-30kHz)

Lower on-resistance

Can withstand higher voltages (upto 1700V)

Possible to parallel for new generations

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IGBTSlower compared to MOSFET (<20-30kHz)

Lower on-resistance

Can withstand higher voltages (upto 1700V)

Possible to parallel for new generations

Probably best choice for 500-1700V, kWs ofapplications

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IGBT Comparison

To be discussed more in detail throughout the semester

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Data-Sheet ExerciseIGBT, H series 1200 V, 40 A high speed

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Some New Transistor Technologies

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Some New Transistor Technologies

GaN

Advancing power supply solutions through the promise of GaN

Power GaN Opens New Applications50 / 53

Some New Transistor Technologies

SiC

Next Generation Power Semiconductors: What is GaN / SiC?

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Some New Transistor Technologies

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You can download this presentation from:keysan.me/ee463

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