Mitsubishi Power Semiconductor DevicesMitsubishi Power Semiconductor Devices

Mitsubishi Electric CorporationPower Device Works

27th May, 2008

Major ApplicationsMain Product categories (examples)

DIP-IPM/SIP-IPM（600V, 3～75A, 6 devices, Transfer molding tech.）

HVIPM,HVIGBT（1.7～6.5kV, 0.4～2.4kA）

Air con.Refrigerator

Washing machine

Motor drive for Locomotive Mill machineGCT

（4.5～6.5kV, 0.4～6kA）

IPD Acceleration Sensor HVIC

HEV-IPM (600V/600A) HEV-IPU (600V/300A) EV/HEV for Motor drive

Automobile

White goods

Standard IPM, ASIPM（600V/1200V, 4～800A） Inverter

IGBT module（600V/1200V, 50～1000A）

Industry

LocomotiveHigh power

Other

AC ServoWind Power

SolarSystem

Major Markets Areas and Some Product Families of Mitsubishi Power DevicesMajor Markets Areas and Some Product Families of Mitsubishi Power Devices

0 .01

0 .1

1

10

100

1980 1990 2000 2010 2020

年

パワ

ー密

度　

[W/cc]

M-Converter（RB-IGBT)

Power Density Enhancement for Medium Power PE EquipmentPower Density Enhancement for Medium Power PE EquipmentPower Density Enhancement for Medium Power PE Equipment

Pow

er D

ensi

ty (

w/c

c)

Year

Gen-purpose Inverter( Bipolar )

Gen-purpose Inverter( IPM )

Inverter for Appliances( DIP-IPM )

HEV Inverter( EV-IPM )

Gen-purpose Inverter( RC-IGBT & others )

M-ConverterInverterHEV Inverter •• Efforts toward Efforts toward

SiCSiC Application Application •• Integration Integration

TechnologyTechnology•• New Packaging New Packaging

TechnologiesTechnologies

Note:IPM: Intelligent Power ModuleDIP-IPM: Dual In-line Package IPMEV-IPM: IPM for EV and/or HEV applicationsRB-IGBT: Reverse Blocking type IGBTRC-IGBT: Reverse Conducting type IGBTM-Converter: Matrix ConverterHEV Inverter: Inverter systems for hybrid vehicles

Mitsubishi IGBT-G2

Mitsubishi IGBT-G3

Mitsubishi IGBT-G5（CSTBT）

Projected Growth of Power Density in Power Electronics System Designs

Equipment’s Power Density = Pout (W) / Volume (cc)

Key Steps of IGBT Structural Improvements Key Steps of IGBT Structural Improvements

33rdrd Gen. Planar (3um), PTGen. Planar (3um), PT

G （Gate）E （Emitter）

n+ buffer layer（Epi.）

pn+ p+

C （collector）

p+ substrate

n- layer（Epi.）

pn+ p+

250 μ

m

55thth Gen. CSTBTGen. CSTBTTMTM (1um), LPT(1um), LPT

n- layer (FZ)

np

n+p+

n+ buffer layer

p+

1７0μ

m

C（Collector）

G（Gate）E（Emitter）

N-type CS layer

New structure implementing modified CSTBT cell design, optimized LPT concept and

advanced fabrication process

44thth Gen. Trench (1um), PTGen. Trench (1um), PT

n+ buffer Layer (Epi.)

n- layer (Epi.)

p

p+

250μ

m

C（Collector）

G（Gate）E（Emitter）

p+substrate

n+

• Shrink cell 1/10• Thinner -30%

1200V class IGBT

VCE(sat)

Eoff

CSTBT

PlanarIGBT

1.3

1.5

1.7

1.9

2.1

2.3

2.5

2.7

2.0 2.5 3.0 3.5 4.0 4.5

cell pitch [μm]

V CE(

sat)

[V] (

150A

/cm

2 ,398

K) 1200V IGBT

Trench IGBT

CSTBTTM

800

850

900

950

1000

1050

2.0 2.5 3.0 3.5 4.0 4.5

cell pitch [μm]

J C(s

at) [

A/c

m2 ] (

398K

) 1200V IGBT

Trench IGBT

CSTBTTM

1.0μm1.5μm

Cell pitch

CS

nB

Emitter electrode

nE

pB

Trenchgate

Isolation layer

Cell pitch

VCE:200V/div, VGE:10V/div, IC:10A/div, time:0.5μs/div

VCE=0VIC=0A

VGE=0V

VGE

1200V50A(600A/cm2)

IC

VCE

VCE=0VIC=0A

VGE=0V

VCE:200V/div, VGE:20V/div, IC:20A/div, time:2μs/div

VGE

VCE

IC800V

60A(750A/cm2)

+16V

-15V

6th Generation IGBT

Technology

6th Generation IGBT

Technology

Turn-off switching

Short-circuit ruggedness

Structural Features

0

2

4

6

8

10

12

14

1985 1990 1995 2000 2005 2010Year

FO

M r

atio

[re

fere

nced t

o 1

stge

n.]

1st gen.

5th gen.4th gen.(with RTC)

3rd gen.

2nd gen.

6th gen.1200V IGBT

Fine pattern process

Trench structure

CSTBT structure Thin wafer process

IGBT’s FOM ImprovementIGBT’s FOM Improvement

Figure Of Merit (FOM) = Figure Of Merit (FOM) = JcJc / {/ {vvce(satce(sat)) ×× eeoffoff}}

where, Jc = device’s rated current density. ［A/㎝2 ］

vce(sat) = saturation voltage drop at rated current density conduction with Tj at 400K. [V]

eoff = turn-off switching energy per pulse of operation at rated current density and Tj at 400K. [mj/pulse/A]

The fundamentals of IPM Concept：Local monitoring and safe control of IGBT operation on a real time basis

The fundamentals of IPM ConceptThe fundamentals of IPM Concept：：Local monitoring and safe control of IGBT operation on a real tiLocal monitoring and safe control of IGBT operation on a real time basis me basis

Fast detectionSlow shutdown

Over-currentProtection

Drive Logic

Low impedance drive for high-speed turn-off

Error OutputInput

Current sensing by sense-cell implementation

【 Integrated schemes for a fast over-current detection & a speed-controlled turn-off 】

【 Operation by a simple unipolar power source 】

Advantages:

(1) Improvement of IGBT saturation voltage => Achieving lower power loss

(2) Slowed over-current shutdown=> Controlling voltage over-shoot and noise

(3) Monolithic integration of drive and protection circuit => Miniaturization

Advantages:

(1) Simplification of driving circuit => Miniaturization

(2) Fast turn-off at normal switching => Achieving lower power loss

(3) Monolithic integration of drive and protection circuit => Miniaturization

IGBTFWD

Input

Drive Logic

Biasing power sourceBiasing power source

IGBTFWD

C

E

Auxiliary Emitter Current Measurement

On Chip Temperature Detection

Supply Voltage Detection

DRIVERFault Logic

UV

OT

SC Gate Drive adjustment for EMI optimisation

GND

Vcc

In

Fo

5th gen.CSTBT

Functional Features of Existing IPMs(5th Gen. Level)

Functional Features of Existing IPMs(5th Gen. Level)

Progressing HVIC TechnologyProgressing HVIC Technology

1.31.3μμm, 5m, 5φφ, 600V, 600V

HigherHigher PerformancePerformance& Integration& Integration

0.80.8μμm, 5m, 5φφ,, with OTP, 600Vwith OTP, 600V

0.50.5μμm, 8m, 8φφ, 600V, 600V

55μμm, 5m, 5φφ, 600V, 600V＆＆1200V1200V

1.31.3μμm, 5m, 5φφ, SOI, SOI

State-of-the-Art Future Prospects

MFFP & Double Buried Layer Structure for HVIC structure

MFFP & Double Buried Layer Structure MFFP & Double Buried Layer Structure for HVIC structurefor HVIC structure

・ MFFP (Multiple Floating Field Plate): Surface electric field is relaxed by MFFP.・ Double Buried Layer: Avalanching points are shifted from surface to substrate by an

unique Double Buried Layer Structure to stabilize breakdown voltage.

High Voltage Al WiringMFFP Structure

n+/n-Double Buried Layer

n-p+

p-

n+

n-

n+

n+

Progressing Package TechnologyProgressing Package Technology

Medium PowerIPM/IGBT

•For Industry/Consumer/

High PowerHigh Voltage

•For Traction/Large drives •(AlSiC/AlN)

CategoryCategory

Low PowerIPM/IGBT

•For Industry/Consumer/Automotive fields •1.2KV/25A DIP-IPM•

•Low Rth, Small size

•New VHV structure

•For 1.7kV class •For 6.5kV class

•ＤＩＰ-CIB•High current•DIP-IPM

•Super-mini DIP-IPM

•New Gen Mold type(Under feasibility study)New molding concept

(synergic)Direct lead-Bonded (DLB) Housing

•Base plate-less(Cu/Al203/AlN)

Case type•(Cu/AlN)

Case type

•Metal base plate)

High current Transfer-molded Housing (TPM)

•High Rel. DIP-IPM

•Heat-sink Integration

• Version 3 DIP-IPM

Common Platform

•New Case type (Nx series)

Automotive fields

IPM/IGBT

Progress based on molding technologyProgress based on molding technology

CompactFlexible and easy-to-useStandardized

CompactHigher P/C & H/C endurance Higher isolation capabilityLower thermal resistance

High High TjTj housinghousing

•Case type

Transfer-molded type

State-of-the-Art Future Prospects

TransferTransfer--mold DIPmold DIP--IPMIPMPackage StructurePackage Structure

Package Outline

Large DIP-IPM

Mini DIP-IPM

Mini DIP-IPM

Large DIP-IPM

Mold resin

IGBT

Thermal-sheet for heat dissipation and electrical insulation (Cu foil + Resin)

HVIC, ASICDiodeAl Wire

Cu FrameAu Wire

Mold resin

IGBT HVIC, ASICDiodeAl Wire

Cu FrameAu Wire

1st Mold resin

Diode, IGBTHVIC, ASICAl wire Cu frame

2nd Mold resinAl heat sink

Au wire

New Mini DIP-IPM Super mini DIP-IPM

Package Outline

Advanced DIP-IPM Structure

M size base M size base

substratesubstratecovercover

Double terminalDouble terminal

bushbush

M size caseM size case

pinpin

terminalterminal

NX package conceptNX package concept

Si power devices : approaching theoretical limit…Can SiC be a choice!? How!?

SiC MOSFET・Wide band gap (3 times of Si)

・Breakdown strength (10 times of Si)

・Thermal conductivity (3 times of Si)

→Higher operating temperature

→Higher blocking voltage with thin layer

MOS gate controlled unipolar switching device・Easy to control by gate voltage variation・Low carrier storing effect, low switching loss ・No latch-up, No secondary breakdown

SiC-MOSFETNext generation ideal power switch

Comparison of physical properties between Si and SiC

< 1311403.34H-SiC～ 3000.315001.1Si

[mΩ[MV/cm]

Dielectric Breakdown

Electron Mobility

BandgapMaterial

cm2][cm2/Vs]

Theoretical limit for unipolar devices, Ron.sp @ 1.2kV

[eV]

New Power Semiconductor MaterialNew Power Semiconductor Material

3.7kW/400V motor drive

3.7kW/400V motor Dynamometer

SiC inverter

Time (msec)

Phas

e cu

rren

t (A

)Overview of the experimental motor drive system

3-phase output current at full-load motor drive operation

Pow

er lo

ss in

inve

rter m

odul

e (a

rb. u

nits

)

Carrier frequency (kHz)

4HSiC-MOSFET inverter operation4HSiC-MOSFET inverter operation

Fabrication Fabrication for R&D work.for R&D work.

W81×D98×H55Fabricated SiC Module

Achieved Power Density: 9W/cm3

High Power Density Inverter Fabrication and Evaluation Using 1200V SiC-MOSFET/SBD

High Power Density Inverter Fabrication and Evaluation Using 1200V SiC-MOSFET/SBD

Fabrication Fabrication for R&D workfor R&D work

Experimental Inverter (3.7kW/400V/3ph)

Improvement of Operating Power Losses Improvement of Operating Power Losses

100100％％

0st Gen. 1st Gen. 2nd Gen. 3rd Gen. 4th Gen. 5th Gen. 6th Gen. 7th Gen.

100％

67％50％

33％27％ 22％ 17％

10％？

FR-Z200

High hfeBipolar Tr 1st Gen 2nd Gen 3rd Gen 4th Gen

‘80

5th Gen 66thth GenGendevicedevice SiCSiC devicedevice

‘85 ‘90 ’95 ‘00 ‘05 ‘10

FR-A200 FR-A500 FR-A700

Design rule : 5μｍ 3μｍ 1μｍ 1μｍCurrent density ： 100A/cm2 135A/cm2 180A/cm2 200A/cm2

Saturation voltage ： 2.4ｖ 2.2ｖ 1.6ｖ 1.6ｖ

power lossreduction

Transistorturn-off loss

Transistoron-state loss

Transistorturn-on loss

Power loss on inverter operation

Pow

er l

oss

Bipolar Planar IGBT Trench IGBT SiC!?

～～

10 100 1K 10K 10OK 1M

10

100

1K

10K

10OK

1M

10M

100M

Operation Frequency (Hz)

MOSFET

Discrete IGBT

Thyristor

Triac New Application Trend

Bipolar Transistor

Module

Out

put C

apac

ity o

f PE

Syst

em (V

A)

Heavy PE SystemsTraction PE

Automotive PE

Consumer Electronics

GTOGCT

Si

IPMIPMIGBT ModuleIGBT Module

Unipolar solution

Bipolar solutionSiC

☆☆ High speedHigh speed☆☆ Low lossLow loss☆☆ DownsizingDownsizing☆☆ High temp. operationHigh temp. operation

AutomotiveInverter

UPS

Power SupplyCommunication

Power Transmission

Large DriveTraction

SiC potential

Industrial EquipmentPower Supplies

Medical Equipment

Possible Enhancement of Power Device Application Range by Possible Enhancement of Power Device Application Range by SiCSiC

Major Technological TrendsMajor Technological Trends

Eoff

Von

SOA

Higher operating temperature

Lower storage temperature

Balance

Higher power density and integration Lower lossesRobustness / Wider SOA

Higher PC/TC capability

Improved heat dissipation

Packages featuring compatibility

New Material