fMftVy ekWMqys”ku

rduhd uke : Hkqis”k >k

• czkap : bysDVzkfuDl ,oa dE;qfuds”ku bUthfu;fjax • REG. NO. : G-61• GROUP : GE-5

• dkWyst : SKYLINE institute of engineering and technology, greater Noida

fo’k; lqphofMthVy ekWMqys”ku VsfDud ,oa izdkjoBinary phase shift keyingoQuadrature phase shift keyingoOffset QPSKoQuadrature amplitude modulationoField effect transistor ,oa izdkjoZener diodeoL E DoGunn diodeoPIN diodeoSCRoTransistor 2

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Ikfjp; fMftVy dE;wfuds”ku flLVe

fMftVy dE;wfuds”ku flLVe essa vf/kd vko`fRr ds ,ukykx flXkuy dks de vko`fRr ds fMftVy lwPkuk flXkuy ls ekMqysV djrs gSa rFkk flLVe esa fMftVy iYl dk iz;ksx gksrk gSAsource

Sourceencoder

Channel encoder

Modulater

Destination Source decoder

Channel decoder

Demodulater

Communication channel

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fMftVy ekMqys”ku ds izdkj

fMthVy ekWMqys”k

u,EkIyhV~;w

M flQ~V dhbax(ASK)

QzhDosa”kh flQ~V

dhbax (FSK)

Qst flQ~V dhbax (PSK)

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1& fMftVy ,EkIyhV~;wM ekMqys”ku vFkok ,EkIyhV~;wM flQ~V dhbax(ASK):-,EkIyhV~;wM flQ~V dhbax esa dSfj;j flXuy dsk lwpuk flXkuy ds fMftVy iYlksa ds vuqlkj vku ;k vkQ fd;k tkrk gSA

blesa ckbujh fMftV ^1*dks iznf”kZr djus ds fy, dSfj;j flXuy dk iz;ksx fd;k tkrk gS tcfd ^0* ds fy, dSfj;j flXuy dk iz;ksx ugha djrs gSaA blesa dSfj;j QzhDosa”kh vifjofrZr jgrh gSA

,EkIyhV~;wM flQ~V dhbax dk mi;ksx&

1& eYVhpSuy VsyhxzkQ flLVeksa esaA2&Uokbt dh leL;k ds dkj.k bldk iz;ksx de gh djrs gSaA

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2- QzhDosa”kh flQ~V dhbax(FSK):&QzhDosa”kh flQ~V dhbax esa nks dSfj;j QhDosa”kh dk iz;ksx fd;k tkrk gSA blesa lwpuk flXkuy ds fMftVy iYlksa ds dzekuqlkj carrier signal dh frequency dk iz;ksx djrs gSa ,oa nksuks ckbujh fMftV~l ds fy, nks fofHkUu QzhDosa”kh ds dSfj;j flXuy dk iz;ksx djrs gSa rFkk dSfj;j dk amplitude vifjofrZr jgrk gSA ;g FM dh gh rjg gksrk gS ijUrq ekMqysfVax flXkuy ckbujh esa gksrk gS A

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QzhDosa”kh flQ~V dhbax dk mi;ksx&• Ykks&LihM fMftVy MsVk dks Hkstus esa bldk iz;ksx fd;k tkrk gSA

QzhDosa”kh flQ~V dhbax ds ykHk&• ,EkIyhV~;wM flQ~V dhbax esa QSfMax bQsDV

ls cpus ds fy, vkVksesfVd xsu daVz~ksy dh vko”;drk gksrh gSA • QzhDosa”kh flQ~V dhbax

tujs”ku ,EkIyhV~;wM flQ~V dhbax ls vklku gksrk gSA• dSfj;j flXuy ds ,EkIyhV~;wM vifjoZru”khy

gksus ds dkj.k blesa ikWoj osLV ugha gksrh ,oa UkWkbt ls eqfDr fey tkrh gSA

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3. Qst flQ~V dhbax(PSK) Qst flQ~V dhbax ,axy ekMqys”ku dk ,d vU; rjhdk gS ftlesa fu;r ,eIyhV~;wM

fMftVy ekMqys”ku gksrk gSA;g Qst ekMqys”ku dh gh rjg gksrk gS ijUrq ekMqysfVax flXuy ckbujh QkeZ esa gksrk gS ,oa blesa dsoy fuf”Pkr vkmViqV Qst laHko gSaA

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fMthVy dE;qfuds”ku ds ykHk ,ao gkfu ykHk

bles tks transmission ds dkj.k noise vk tkrk gS oks received signal dks damage ugh djrk A

vf/kd ekrzk es fMthVy flxuy ds transmission nkSjku multiplexing es fd;k tkrk gS A

gkfubldk cost vf/kd gksrk gS Ables aamplitude modulation ls vf/kd bandwidth dh vko”;drk gksrh

gS A

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Ckkbujh Qst flQ~V dhbax(BPSK):- Ckkbujh Qst flQ~V dhbax esa ekMqysfVax flXuy ds ykftd daMh”ku ds vuqlkj] binary modulating signal carrier signal ds

phase esa ifjOkRZku djrk gSA

Ckkbujh Qst flQ~V dhbax ekMqysVj dk vkmViqV osoQkEkZ ,d Mcy lkbMcSaM lIizsLM dSfj;j flXuy gksrk gS ftlesa vij ,oa yksoj lkbMcSaM QzhDosaa”kh vk/ks fcV jsV ls dSfj;j QzhDosa”kh ls fHkUu gksrh gSaA

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DokMjspj Qst flQ~V dhbax (QPSK):-blesa mifLFkr data bit ftUgsa modulate djuk gS ] feydj dibit cukrs gSa

izR;sd flacy 00 , 01 , 10 ;k 11 esa ls dksbZ ,d oSY;w ys ldrk gSA izR;sd flacy varjky esa ] buiqV flacy ds pkj laHkkfor oSY;wt ds vuqlkj ekMqysVj dSfj;j dks pkj esa ls fdlh ,d laHkkfor Qst ij flQ~V dj nsrk gSA ideal case

esa]Qst esa 90 va”k dk varj gkSrk gS

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Block diagram of QPSK transmitter:- fMfcV~l dks fcV fLIyVj dks fn;k tkrk

gSA ;g serially buiqV fn;k tkrk gS A fcV pSuy I vkSj nwljk fcV pSuy Q dh

rjQ vxzlj gksrk gSA fcV I ml dSfj;j dks ekMqysV djrk gS tks fjQjsal vkfLdysVj ds lkFk lse Qst esa gksrk gS rFkk fcV Q fjQjsal vkfLdysVj ds DokMjspj dEiksusaV]90 va”k vkmV vkWQ Qst] dks ekMqysV djrk gSA

pSuy I vkSj Q esa cWV tkus ds ckn dh dk;Zfof/k Ckkbujh Qst flQ~V dhbax ekMqysVj dh gh rjg gksrh gSA

vr% Hkstus ds nkSjku DokMjspj Qst flQ~V dhbax flXuy ds Qst esa +45 va”k ;k – 45 va”k ifjorZu gksus ds ckn Hkh ;g fMekMqysV gksus ij fjlhoj ij lgh lwpuk budksM djkrk gSA

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Block diagram of QPSK receiver

buiqV flXuy dks I vkSj Q esa foHkDr djds izksMDV fMVsDVj vkSj dSfj;j fjdojh lfdZV dks nsrs gSaA

dSfj;j fjdojh lfdZV ewy Hksth x;h dSfj;j vkfLdysVj flXuy dks iqu% mRiUu djrk gSA

izksMDV fMekMqysVj I o Q esa DokMjspj Qst flQ~V dhbax flXuy fMekMqysV gksrk gS

izksMDV fMekMqysVj dk vkmViqV eYVhIYksDlj dks fn, tkrs gSa tgkW ;s lekUrj I o Q MsVk pSuy ls ,dy ckbujh MsVk LVz~he esa ifjofrZr gks tkrk gSA

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OFFSET QPSK • ;g QPSK dk ,d lq/kjk gqvk izdkj gssS A• tgkW 1 fcV~ rjax tks I vkssSj Q channel ij fLFkr gSS mls vk|k

0-5 fcV~ (bit) izfr le; fd nj ls ifjofrZr djrk gSS • OQPSK & QPSK signal dk spectrum leku gksrk gSA • Qpsk dk amplitude idealy constant gksrk gS A• OQPSK Constellation diagram dk phase transition 90 degree rd

fyfeVsM gksrk gS A

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Quadrature amplitude modulation (QAM)• ;g digital modulation dk izdkj gksrk gS A• ;gkW digital modulation es phase vkSj carrier nksuks

mifLFkr gksrk gS A• ;g data communication vkSj wireless communication es

mi;ksx gksrk gS A• Constellation digram position vkSj status iznZf”kr djrk

gS

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Bit rate Table of different forms of QAM & PSK:-Modulation Bits per symbol Symbol rate

BPSK 1 1 bit rate

QPSK 2 ½ bit rate

8 PSK 3 1/3 bit rate

16 QAM 4 ¼ bit rate

32 QAM 5 1/5 bit rate

64 QAM 6 1/6 bit rate

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Field Effect Transistor(FET) ;g ,d ,slh v)pkyd ;qfDr gS ftlesa pkyd pSuy dh

pkSMkbZa dks fo|qr {ks= }kjk fu;fU=r fd;k tk ldrk gS A bles rhu VfeZuy gksrs gS bldks oksYVst }kjk

fu;f=ar fd;k tk ldrk gSA FET esa /kkjk dk pkyu dsoy estkWfjVh dSfj;lZ

ds }kjk gksrk gSA ;g ;wfuiksyj transistor dgykrk gSA Types of FET :-JFETMOSFET

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Junction field effect transistor (JFET);g rhu terminal device gksrk gS , source , Drain vkSj Gate A;g eq[;r: nks izdkj ds gSP channelN channelN-pSuy tD”kau QhYM bQSDV VkftLVj es N-Vkbi flfydkWu dh N.k

gksrh gSA ;g N.k nks VfeZuyks ds e/; ,d izfrjks?k dh rjg C;ogkj djrh gS ;s VfeZuy source ,oa drain dgykrs gS aA

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Metal oxide semiconductor field effect transistor (MOSFET) :-

• bles xsV vkSj pSuy ds e/; flfydkWu MkbZ vkDlkbM dh ,d cgqr iryh ijr iz;qDr dh tkrh gSk tks xsV ,ao pSuy ds e/; bU”kqys”ku dk dk;Z djrh gSaA • ;g nks izdkj dk gksrk gS1. N channel MOSFET2. P channel MOSFET

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Zener diode • Zener diode ,d p-n tD”ku gksrk gSA • Zener diode ,d Lis”ky izdkj dk diode tks farword fn”kk eas current lapj.k gksus

nsrk gS A• ;g revese direction es Hkh lapj.k gksus nsrk gS ij ,d fuf”pr voltage rd ftls

break down voltage ;k zener voltage dgrs gS A

Zener diode symbol

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Zener diode Current vs. Voltage graph

Applications :-As voltage regulaterClipper

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Light Emitting Diode(LED)• ;g ,d forward biased P-N Junction gksrk gS tks energized

gksus ij light emit djrk gS A• Tkc N side junction ds electron vkSj P side junction ds hole

recombine gksrs gS rc charge carrier recombine gksrs gS A• the type of material used the colour of light (frequencies) is emitted :-

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Gunn diode• Gunn ,d fof”k’V bysDV~~kfud fMokbl gS A gunn diode ,p-n junction ugha

j[krk ysfdu nks bysDV~ksMks fd miLfFkfr ds dkj.k bls diode dgrs gSaA• xuMk;ksM ds ,EifyV~;wM fd vf/kdre~ lhek +_.kkred izfrjks/k

fu/kkZfjr djrk gSA• xuMk;ksM fi,u tax”ku fd vis{kk cYd eVsfj;y Iks fuHkZj djrk gSA

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xuMk;ksM dk iz;ksx%1- xuMk;ksM eq[;r% 1 fxxk gVZ~Tk ls 100 fxxk gV~Zt rd fd ekbdzksoso vko`fr fd jsfM;ks vko`fr mRiUu djus es iz;ksx fd;k tkrk gSA2- xuMk;ksM ,EifyQk;j ds #i es Hkh iz;ksx fd;k tkrk gSA3- xuMk;ksM dk iz;ksx vklku gksus ds dkj.k] ;s ekbdzksoso vko`fr mRiUu djus esa iz;ksx fd;k tkrk gSA

• V-I characterstic of GUNN diode

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PIN diode• PiN diode, PN junction dk digrammatical structure iznZf”kr djrs gS A• IkjUrq PN junction ds chp intrinsic layer mifLFkr gksrk gS A

Applications:-• High voltage rectifier• RF switch• Photo detector

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SCR:-• ;g Silicon controlled rectifier gksrk gS A• ;g forward bias es de izfrjks/k okyk fMokbl gS rFkk

reverse bias es vf/kd izfrjks/k okyk gS A• ;g rhu junction dk fMokbl gksrk gSA

Symbol for SCREquivalent circuit of a silicon controlled rectifier(SCR)

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SCR characterstic curve :- ;g rhu region es dkZ; djrk gS ,

tks fuEu izdkj gS -1. Farword conduction region2. Farword blocking region3. Reverse condction region

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Transistor• ,sls fdzLVy ls fuekZ.k fd;k tkrk gS tgkW nks taD”ku

gksrs tks forward bias rFkk nwljs fjolZ ck;l (reverse bias) fLFkfr esa nksuks taD”ku esa yxHkx leku /kkjk izokfgr gksrh gS] ,slh ;qfDr VzkaftLVj dgykrh gSA

Transistor

NPN transistor

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•PNP transistor

• Emitter rFkk collector , P type semiconductor ls rFkk Base N type semiconductor ls cuk gksrk gS A• - P type semiconductor dk;Z mRltZd }kjk Hksts tkus okys vkos”k

okgdks dks ,df=r djuk gksrk gSA• bl izdkj ds transistor dk mi;ksx negative power supply es fd;ka tkrk gS

A

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NPN transistorEmitter rFkk collector,Ntype Lks rFkk Base , P type

semiconductor ls cuk gksrk gS A-N type semiconductor /kkjk izokg ds fy, vkos”k okgdks dk yxkrkj mRltZu djrk gS rFkk Base- VzkaftLVj ds e/; es fLFkr iryh ijr gksrh gSA ;g mRltZd vkSj laxzgd ds e/; larqyu cuk ds j[krk gSA

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Application of Transistor• bldk iz;ksx eq[;r% izo/kZd ds :Ik es fd;k

tkrk gS A• bldk iz;ksx amplifirers vkSj oscillators ds :Ik es

fd;k tkrk gS A• bldk iz;ksx feDlM flaxuy ifjiFk (mixed signal

circuit) tks dh fMftVy ifjiFk (digital circuit) vSkj ,ukykx ifjiFk (analog circuit) ds chp baVjQsl djus ds fy, fd;k tkrk gsSA

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/kU;oknTHANK YOU