Optical Properties of Solids Lecture 1 Stefan Zollner Properties Lecture 1 Zollner.pdf · Complex...

Optical Properties of SolidsLecture 1

Stefan ZollnerNew Mexico State University, Las Cruces, NM, USA

and Institute of Physics, CAS, Prague, CZR (Room 335)[email protected] or [email protected]

NSF: DMR-1505172http://ellipsometry.nmsu.edu

http://www.bbc.co.uk/northernireland/yourplaceandmine/images/helpabout/keyboard_250x145.jpgmailto:[email protected]:[email protected]

Acknowledgements

These lectures were supported by • European Union,

European Structural and Investment Funds (ESIF) • Czech Ministry of Education, Youth, and Sports (MEYS),

Project IOP Research Mobility – CZ.02.2.69/0.0/0.0/0008215

Thanks to Dr. Dejneka and his department at FZU.

Stefan Zollner, February 2019, Optical Properties of Solids Lecture 1 2

Contributions by Czech researchers


Jan TaucBrown University

a-Si:H (solar cells)

Karel KuncSorbonne (Paris)lattice dynamics

Josef HumlicekMasaryk Uellipsometry

Others:Frantisek Lukes, E. Schmidt (Masaryk University, Brno)Libuse Pajasova, A. Abraham, E. Antoncic, B. Velicky: Reflectance on Ge and GeO2E. Antoncic: Temperature dependence of band gaps

Czechoslovak Journal of Physics (1952-2006, Springer online)1960 ICPS-5 Conference held in Prague

Bedrich VelickyFZU

Ge, excitons, KK

Optical Properties of Solids: Lecture 1• Introductions: Why are we here?• Lecture series overview• Spectroscopy: what is that?• Experimental spectroscopy techniques• Optical constants:

– Complex refractive index– Complex dielectric function– Absorption coefficient, extinction coefficient– Normal-incidence reflectance

• Solid-State Physics: What can we learn from optical properties?


Where is Las Cruces, NM?


New Mexico State UniversityNew Mexico State University

BiographyRegensburg/StuttgartGermany

Las Cruces, NMSince 2010

6

Motorola (Mesa, Tempe)Arizona, 1997-2005

Motorola, FreescaleTexas, 2005-2007Freescale, IBM

New York, 91-92;07-10

6

New Mexico State University

SiGe:C Metrology: How thick is my film?

7

0.00

0.05

0.10

0.15

0.20

0.25

0 1 2 3 4 5Depth (a.u.)

Ge

atom

ic fr

actio

nSi cap(emitter)

SiGe:C base

Si substrate

theta (seconds)-2500 -2000 -1500 -1000 -500 0 500

Log

Inte

nsity

(a.u

.)

2

3

simulationdata

Si1-xGex alloys

Energy (eV)0 1 2 3 4 5 6 7

ε 2

0

10

20

30

40

50

Si9.06%14.93%21.10%26.86%

Si1-xGex alloys

Energy (eV)0 1 2 3 4 5 6 7

ε 1

-20

-10

0

10

20

30

40

50

Six=9.06%x=14.93%21.10%26.86%

High-resolution XRD

SpectroscopicEllipsometry

SZ, Hildreth, Liu, Zaumseil, Weidner, Tillack, J. Appl. Phys. 88, 4102 (2000)

Si1-xGex alloys

Si1-xGex 100 thickness measurementsNeed precise values of refractive index

Chart2

1.995

2

3

3.75

3.755

HBT1

Depth (a.u.)

Ge atomic fraction

0

0.07

0.2

0.2

0

Sheet1

depth (A)edgeR/2center blankHBT1 (a.u.)HBT1SE fit

0

12.7971.99539906030

25.59324000.078510.202

38.3936000.29940.202

51.1873.757500.29950

63.9833.7557510

76.78

89.577

102.37

115.17

127.97

140.76

153.56

166.36

179.15

191.95

204.75

217.54

230.340.0150730.019738

243.140.0250390.022393

255.930.0103170.016514

268.730.0269580.017159

281.530.0188730.018568

294.320.0366460.020069

307.120.0480370.024303

319.920.0720350.034608

332.710.0952750.036296

345.510.113340.055596

358.310.131850.074753

371.10.154050.093722

383.90.173360.10943

396.70.181810.11956

409.490.1960.13973

422.290.201920.16152

435.090.200340.17817

447.880.203830.19345

460.680.201730.19526

473.480.203540.19514

486.270.196820.19175

499.070.18260.19807

511.870.159330.19401

524.660.118970.19696

537.460.0670120.18729

550.260.0369390.17840.012898

563.050.021490.164070.009524

575.850.014120.133580.012981

588.650.0179510.0984980.013412

601.440.0531990.02513

614.240.0304850.017102

627.040.0316320.029739

639.830.0197340.035396

652.630.0188980.048201

665.430.062724

678.220.069877

691.020.087592

703.820.098341

716.610.099737

729.410.10657

742.210.11499

7550.12695

767.80.13892

780.60.15574

793.390.16963

806.190.18106

818.990.19029

831.780.19574

844.580.19317

857.380.1933

870.170.19367

882.970.19521

895.770.19705

908.560.19359

921.360.19644

934.160.19763

946.950.19815

959.750.19527

972.550.19231

985.340.18957

998.140.19342

1010.90.17796

1023.70.15841

1036.50.12804

1049.30.081886

1062.10.047244

1074.90.027949

0.020425

0.015073

0.017914

0.011093

0.010989

Sheet2

Sheet2

000399603

12.79712.79712.797400851

25.59325.59325.593600994

38.3938.3938.39750995

51.18751.18751.187751

63.98363.98363.983

76.7876.7876.78

89.57789.57789.577

102.37102.37102.37

115.17115.17115.17

127.97127.97127.97

140.76140.76140.76

153.56153.56153.56

166.36166.36166.36

179.15179.15179.15

191.95191.95191.95

204.75204.75204.75

217.54217.54217.54

230.34230.34230.34

243.14243.14243.14

255.93255.93255.93

268.73268.73268.73

281.53281.53281.53

294.32294.32294.32

307.12307.12307.12

319.92319.92319.92

332.71332.71332.71

345.51345.51345.51

358.31358.31358.31

371.1371.1371.1

383.9383.9383.9

396.7396.7396.7

409.49409.49409.49

422.29422.29422.29

435.09435.09435.09

447.88447.88447.88

460.68460.68460.68

473.48473.48473.48

486.27486.27486.27

499.07499.07499.07

511.87511.87511.87

524.66524.66524.66

537.46537.46537.46

550.26550.26550.26

563.05563.05563.05

575.85575.85575.85

588.65588.65588.65

601.44601.44601.44

614.24614.24614.24

627.04627.04627.04

639.83639.83639.83

652.63652.63652.63

665.43665.43665.43

678.22678.22678.22

691.02691.02691.02

703.82703.82703.82

716.61716.61716.61

729.41729.41729.41

742.21742.21742.21

755755755

767.8767.8767.8

780.6780.6780.6

793.39793.39793.39

806.19806.19806.19

818.99818.99818.99

831.78831.78831.78

844.58844.58844.58

857.38857.38857.38

870.17870.17870.17

882.97882.97882.97

895.77895.77895.77

908.56908.56908.56

921.36921.36921.36

934.16934.16934.16

946.95946.95946.95

959.75959.75959.75

972.55972.55972.55

985.34985.34985.34

998.14998.14998.14

1010.91010.91010.9

1023.71023.71023.7

1036.51036.51036.5

1049.31049.31049.3

1062.11062.11062.1

1074.91074.91074.9

0.020425

0.015073

0.017914

0.011093

0.010989

edge

R/2

center blank

HBT1

SE fit

Depth (A)

Ge atomic fraction

MB17652.1#14

0

0

0.07

0.202

0.2

0.202

0.2

0

0

0.015073

0.019738

0.025039

0.022393

0.010317

0.016514

0.026958

0.017159

0.018873

0.018568

0.036646

0.020069

0.048037

0.024303

0.072035

0.034608

0.095275

0.036296

0.11334

0.055596

0.13185

0.074753

0.15405

0.093722

0.17336

0.10943

0.18181

0.11956

0.196

0.13973

0.20192

0.16152

0.20034

0.17817

0.20383

0.19345

0.20173

0.19526

0.20354

0.19514

0.19682

0.19175

0.1826

0.19807

0.15933

0.19401

0.11897

0.19696

0.067012

0.18729

0.036939

0.1784

0.012898

0.02149

0.16407

0.009524

0.01412

0.13358

0.012981

0.017951

0.098498

0.013412

0.053199

0.02513

0.030485

0.017102

0.031632

0.029739

0.019734

0.035396

0.018898

0.048201

0.062724

0.069877

0.087592

0.098341

0.099737

0.10657

0.11499

0.12695

0.13892

0.15574

0.16963

0.18106

0.19029

0.19574

0.19317

0.1933

0.19367

0.19521

0.19705

0.19359

0.19644

0.19763

0.19815

0.19527

0.19231

0.18957

0.19342

0.17796

0.15841

0.12804

0.081886

0.047244

0.027949

Sheet3


Key HW accomplishments for 3G smart phones


1. Power amplifier: InGaP Heterojunction bipolar transistor (HBT)

2. Low-noise amplifier:Silicon-germanium-carbon HBT

3. New CMOS materials:Advanced substrate materials (SOI)High-k (complex metal oxide) gate dielectricsMetal gateSi-Ge-C source-drain stressors Laser annealing (>100 citations)Nickel silicide Ohmic contactsCopper interconnectsLow-k interlayer dielectrics

4. Power, analog, passives

32nm CMOS on SOI

Double-poly capacitor


Flat, clean, & uniform films, at least 5 by 5 mm2, 190 nm to 40 µm, 10-800 Klow surface roughness, layers on single-side polished [email protected] http://ellipsometry.nmsu.edu

Grad. Students: Nuwanjula Samarasingha, Farzin Abadizaman, Carola Emminger, Rigo CarrascoUndergraduate Students: Pablo Paradis,Cesy Zamarripa, Zachary YoderCollaborators: Jose Menendez (Arizona State), Sudeshna Chattopadhyay (IIT Indore)Samples: Arnold Kiefer (AFRL), Jim Kolodzey (Delaware), John Kouvetakis (Arizona State), Alex Demkov (UT Austin)

mailto:[email protected]

Introductions: Why are we here?


Optical Properties of Solids: Overview1. Overview: spectroscopy, optical constants, and solid-state physics2. Crystal structures, Wyckoff positions, point and space groups,

classification of optical vibrations3. Maxwell’s equations in vacuum, plane waves, polarized light4. Maxwell’s equations in continuous media, dielectric function, Lorentz and

Drude model, Sellmeier, poles, Cauchy5. Analytical properties of the dielectric function, KK relations6. Application of Lorentz and Drude models to insulators and metals7. Electronic band structure, direct and indirect gap absorption8. Free electrons, effective masses in semiconductors, excitons9. Interband transitions, van Hove singularities, critical points10. Photoluminescence, Einstein coefficients, quantum confinement11. Applications: Anisotropic materials12. Applications: Thin films, stress/strain, deformation potentials


Optical Properties of Solids: Text Book


Optical Properties of Solids: Other Text Books


Part III:Optical Properties

M.L. Cohen & J. Chelikowsy: Electronic Structure & Optical Properties

Tanner (U FL): notes

C. Klingshirn: Semiconductor Optics

Ellipsometry:FujiwaraTompkins/HilfikerFujiwara/CollinsPalik I, II, IIIAzzam/Bashara

Classification Schemes for Surface Spectroscopy I

Particles: Electron (e), ion (i), or photon (γ)The term spectroscopy implies that we prepare, vary, or measure the

energy (wavelength) and/or momentum of the primary and/or secondary particle.

For photons, we can also measure the polarization of the primary and/or secondary photon.

The interaction depth for thin films depends on the penetration depth of the primary particle and the escape depth of the secondary particle. (This can be nanometers to micrometers, depends on each technique.)

primary particlee, i, γ

secondary particlee, i, γ

φ ψ

surfacenormal


Classification Schemes for Surface Spectroscopy II


1. Specular reflection: The angle of reflection is equal to the angle of incidence. For some spectroscopies, the angles are measured relative to the surface (XRR), for others relative to the surface normal (SE).

2. Diffuse reflection or scattering: There is no well-defined direction, in which the secondary particle exits. The scattering probability may depend on the angles.

3. Diffraction: Requires a periodic (crystalline) layer. There is a well-defined angular relationship between the spacing of the diffraction (Bragg) planes and the momentum of the incident/diffracted beams.

φ ψ2

Diffuse reflection/scattering:PL, Raman, SIMS, Auger

φ ψ3

Diffraction: XRD

φ φ1

Reflection:Ellipsometry, XRR

Classification Schemes for Surface Spectroscopy III


• Elastic scattering: The energy of the incident particle equals that of the scattered particle.

• Inelastic scattering: The two energies are different, depending on the energy gained or lost by the interaction with the thin film.

• Both can yield information about the energy states in the film.

EgElastic: The intensity of the reflected (relative to the refracted beam) depends on the excited states of the system (band gaps).

Inelastic: The energy difference (gain or loss) provides information about vibrational (Raman) or electronic (Auger) energy states. The strength of the scattering process depends on the interaction with an intermediate state.Eg

Ei

Classification Schemes for Surface Spectroscopy IV


− Spectroscopic Ellipsometry: Elastic, specular, γ → γThickness, Energy (band gap), refractive index, composition

− X-ray reflectivity: Elastic, specular, γ → γThickness, density, surface/interface roughness

− X-ray diffraction: Elastic, diffracted, γ → γLattice constant, stress/strain, composition

− UV Raman Spectroscopy: Inelastic, scattered, γ → γ Vibrational (phonon) energy, composition, stress/strain

− Secondary Ion Mass Spectrometry: Inelastic, scattered, i → iComposition, depth profile (sputtering), doping

− Auger Electron Spectrometry: Inelastic, scattered, e → eComposition, depth profile (sputtering)

− Rutherford backscattering: Inelastic, scattered, α → αComposition, some depth information, primary standard

Bohr Model for the Hydrogen Atom


Quantum Numbers:n 1,2,3,…l 0,…,n-1m −l,…,ls +/− 1/2 Relativistic corrections:s electrons (l=0) close to the core

J=L+S total angular momentumSpin-orbit coupling L·SL=1, S=1/2 J=1/2 or 3/2

E(n)=−R/n2R=13.6 eV

Bonding and Anti-Bonding Orbitals


s: Ψ=ψ1+ψ2 s∗: Ψ=ψ1−ψ2

px, py, pzp*

p

C electronic configuration: 1s2 2s2 2p2L shell forms sp3 hybrid: 1s2 2s1 2p3

A simple band structure for Germanium


p

s

s*

p*

filled

empty

EF

Add

spin

-orb

it co

uplin

g: J

=L+S

Add

kine

tic e

nerg

ys

s*

j=1/2

j=3/2

j=1/2

j=3/2

∆0

∆0’

Ge electronic configuration: … 4s2 4p2N shell forms sp3 hybrid: … 4s1 4p3

K=mv2/2=p2/2m=2k2/2m

m: effective mass

CB (empty)e

so∆0

hhlh

4s VB

E

Momentum k

EF E0 band gap

filledfilled

A simple band structure for Germanium


p

s

s*

p*

filled

empty

EF

Add

spin

-orb

it co

uplin

g: J

=L+S

Add

cubi

c sy

mm

etry

s

s*

j=1/2

j=3/2

j=1/2

j=3/2

∆0

∆0’FCC Brillouin zone

Band structure

Carbon, Silicon, Germanium, Tin


The s* band moves down, as the elements get heavier.

In α-tin, the s* band moves into the p-band manifold, between the j=1/2 and j=3/2 states.This makes α-tin a zero-gap semiconductor.

Classification Schemes for Surface Spectroscopy IV


− Spectroscopic Ellipsometry: Elastic, specular, γ → γThickness, Energy (band gap), refractive index, composition

− X-ray reflectivity: Elastic, specular, γ → γThickness, density, surface/interface roughness

− X-ray diffraction: Elastic, diffracted, γ → γLattice constant, stress/strain, composition

− UV Raman Spectroscopy: Inelastic, scattered, γ → γ Vibrational (phonon) energy, composition, stress/strain

− Secondary Ion Mass Spectrometry: Inelastic, scattered, i → iComposition, depth profile (sputtering), doping

− Auger Electron Spectrometry: Inelastic, scattered, e → eComposition, depth profile (sputtering)

− Rutherford backscattering: Inelastic, scattered, α → αComposition, some depth information, primary standard


Example: X-ray Photoelectron Spectroscopy: γ → e

Quantification using RBS standardsHigh depth resolution (small escape depth of photoelectrons)

K

L1L2

Vac

BindingEnergy

0EL2EL1

EK

Ekin = hω - EK - Φdet

incident(~1.5 keV)

γ scatterede-

Oxidation states


Example: Auger Electron Spectroscopy: e → e

K

L1L2

Vac

e-

ElectronImpact Ionization

BindingEnergy

0EL2EL1

EK

EAuger = (EK - EL1) - EL2

incident(5 – 20 keV)

scattered

0

0.2

0.4

0.6

0.8

1

0 1000 2000 3000 4000

Ato

mic

Fra

ctio

n

Depth (Å)

Ge

O

Si

Si

O

Xe+ Ion Beam70º Off Normal

5 keV Primary e- Beam5º Off Normal

Strained SiSiGe

Buried Oxide (SiO2)

Si Substrate

Xe+ Ion Beam70º Off Normal

5 keV Primary e- Beam5º Off Normal

Strained SiSiGe

Buried Oxide (SiO2)

Si Substrate

Quantification using RBS standardsHigh depth resolution (small escape depth of L electrons)


Fourier-Transform SpectrometerGrating Monochromator

Constructive interference: ∆x=NλDestructive interference: ∆x=(2N+1)λ/2

d(sinβ−sinα)=Nλ

Diffracted intensity depends on angle and polarization.

Common for mid-infrared spectroscopy (50-500 meV).

Macroscopic Optical Constants


n: refractive index, n=c/vk: extinction coefficientn+ik: complex refractive index

R: reflectance at normal incidence (Irefl/I0)T: transmittance (Itrans/I0)R+T+A+S=1

α: absorption coefficientα=4πk/λ

ε: complex dielectric functionε=ε1+iε2=(n+ik)2

Why not n-ik?Wave goes like exp[i(kx-ωt)]

All are connected through Maxwell’s equations (Lectures 3/4).

Reflection and Transmission


Law of reflection: αin=αoutSnell’s Law: n1sinαin=n2sinαoutn: Refractive Index

Beer’s Law: I(L)=I0exp(-αL)Also have diffuse scattering.

Absorption coefficient α (cm-1)Consider reflection losses

exp −𝛼𝛼𝛼𝛼 ≈𝑇𝑇

1 − 𝑅𝑅 2

𝑅𝑅 =𝑛𝑛 − 1𝑛𝑛 + 1

2

Transmission: LSAT or (LaAlO3)0.3(SrAlTaO6)0.35


Reflection from a rough surface


Debye-Waller correction:Assumes sinusoidal roughnessRrough=R0exp[-(4πσncosθ/λ)2]σ: rms surface roughness parameterD.K.G. de Boer, Phys. Rev. B 49, 5817 (1994).

Specular Specular+Diffuse

Also: I. Ohlidal, F. Lukes, and K. Navratil, Surf. Sci. 45, 91 (1974). 98 citations.

Reflectance Spectroscopy Instrumentation

Spectroscopic Ellipsometer (VUV/UV/VIS-VASE)

Spectroscopic Ellipsometry:• Thickness (100 to 10000 Å)

• Absorption, band gap

• Refractive index

detectorMonochromator

polarizer

sample

analyzerΦ

X-ray diffraction & reflectance

XRD/XRR:• Crystal structure• Lattice spacings (strain)• Thickness (5 Å to 1000 Å)• Surface, roughness layer

thickness• Density

Spectroscopic Ellipsometer(IR-VASE)

FTIR ellipsometry:• Very thick films (> 5000 Å)

• Phonon absorption

• Optical Constants

detector

Rotating Compensator

polarizer

Source

PolarizerSpectral Range 1.25 to 40 μm(250 cm-1 to 8000 cm-1)


Crystalline CeO2 on sapphire (liquid deposition)

• Insulating CeO2 film on sapphire, with band gap near 3.7 eV.• Determine film thickness from interference fringes in transparent region.• Fit optical constants with basis spline polynomials.

K. Mitchell, C.O. Rodriguez, Y. Li, 2013; X. Guo, Boston Applied Technologies, Inc.

transparent opaque

Fluorite (Oh5)

dielectricfunction

transparent


Thickness Measurements: InGaP HBT• How thick is my film?


Skyworks

Ellipsometry Spectrum


X-ray Reflectance: SrTiO3 on Si


(Å)

LayerElectron Density

(eÅ-3)Bulk Electron density (eÅ-3)

Thickness(nm)

Roughness(nm)

SrTiO3 1.08 1.41 1.79 0.6152

SrTiO3 1.40 1.41 15.6 0.7396

SiO2 0.75 0.81 2.87 0.4202

Si 0.66 0.71 Substrate 0.4574

SiSiO2

SrTiO3

SrTiO3

Q=4𝜋𝜋 sin 𝜗𝜗𝜆𝜆

Small x-ray contrast between Si and SiO2.

Sheet1

LayerElectron Density (eÅ-3)Bulk Electron density (eÅ-3)Thickness(nm)Roughness(nm)

SrTiO31.081.411.790.6152

SrTiO31.401.4115.60.7396

SiO20.750.812.870.4202

Si0.660.71Substrate0.4574

X-ray Diffraction: SrTiO3 on Si, Ge, and SrTiO3

ω-2θ scan (zoomed)

22 22.5 23 23.5 24 24.5 250

20

40

60

80

100

120

140

ω-2θ (°)

Inte

nsity

(cps

)

SrTiO3 on SiSTO (200)

FWHM=0.27°ω=23.27°

22 22.5 23 23.5 24 24.5 250

10

20

30

40

50

60

ω-2θ (°)

Inte

nsity

(cps

)

SrTiO3 on GeSTO (200)

FWHM=0.29°ω=23.28°

Grain Size = 168Å

Grain Size = 161Å

Vertical Strain= -0.15%

Vertical Strain = -0.18%

22 22.5 23 23.5 24 24.5 250

5

10

15

20

25

ω-2θ (°)

Inte

nsity

(cps

x10 6

)

SrTiO3 on SrTiO3STO (200)

FWHM=0.02°ω=23.24°

ω scan

21 21.5 22 22.5 23 23.5 24 24.5 25 25.5 260

1000

2000

3000

4000

5000

6000

7000

ω (°)

Inte

nsity

(cps

)

SrTiO3 on SiSTO (200)

FWHM=0.80°

21 22 23 24 25 260

500

1000

1500

2000

2500

3000

3500

4000

4500

5000

5500

ω (°)

Inte

nsity

(cps

)

SrTiO3 on Ge

STO (200)

FWHM=0.94°

21 22 23 24 25 260

5

10

15

20

25

ω (°)

Inte

nsity

(cps

x 1

06)


FWHM=0.02°

FWHM=0.80º

FWHM=0.94º

FWHM=0.02º

ω-2θ scan

100

101

102

103

104

Inte

nsity

(cps

)

SrTiO3 on SiSi (400)

STO (200)

STO (300)

20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 4010

2

103

104

105

106

107

108

ω-2θ (°)

Inte

nsity

(cps

)


STO (300)

Experimental DataModel

F

100

101

102

103

104

Inte

nsity

(cps

)

SrTiO3 on GeGe (400)

STO (200)

STO (300)

Bragg:2dsinθB=λ

Scherrer:λ=FWHM*t*cosθB

Raleigh scattering (elastic)

Why is the sky blue?


Elastic and Inelastic (Raman) Scattering

Raleigh(elastic)

Raman(Stokes)

Raman(Anti-Stokes)


CARS

Raman Spectroscopy


GaPLSAT Mg2AlO4 (spinel)

Photoluminescence


E0 band gap

electron

hole

γ

Crystal Structure (Point & Space Group)

Electrons Phonons

Solid State Physics (crystalline)

Defects

Magnetism Superconductivity

Transport

Phase Transitions

Surfaces Topological Insulators

CMOS RF Power Analog

Photovoltaics Energy Conversion

Magnetic Storage Catalysis

Lasers Sensors

10-80 meV0.3-10 eVFar-IR to mid-IRNear-IR, VIS, UV

Excitons

Polaritons


Materials properties accessible by optical spectroscopy

• Mid-infrared spectral range– Insulator/semiconductor:

Lattice vibrations (phonons)– Metal: Free carrier properties (density, scattering rate)

• Visible to UV range:– Electronic excitations– Band gap, interband transitions

• Ellipsometry allows us to study semiconductors, insulators, and metals.

• Thin films and surfaces can be investigated with proper data analysis (curve fitting).


Optical Properties of Solids�Lecture 1Slide Number 2Contributions by Czech researchersOptical Properties of Solids: Lecture 1Slide Number 5Slide Number 6Slide Number 7Slide Number 8Slide Number 9Introductions: Why are we here?Optical Properties of Solids: OverviewOptical Properties of Solids: Text BookOptical Properties of Solids: Other Text BooksSlide Number 14Slide Number 15Slide Number 16Slide Number 17Slide Number 18Slide Number 19Slide Number 20Slide Number 21Slide Number 22Slide Number 23Slide Number 24Slide Number 25Slide Number 26Macroscopic Optical ConstantsReflection and TransmissionTransmission: LSAT or (LaAlO3)0.3(SrAlTaO6)0.35 Reflection from a rough surfaceSlide Number 31Crystalline CeO2 on sapphire (liquid deposition)Thickness Measurements: InGaP HBTX-ray Reflectance: SrTiO3 on SiX-ray Diffraction: SrTiO3 on Si, Ge, and SrTiO3Raleigh scattering (elastic)Elastic and Inelastic (Raman) ScatteringRaman SpectroscopyPhotoluminescenceSlide Number 40Materials properties accessible by �optical spectroscopy Backup SlidesSlide Number 43Slide Number 44Slide Number 45

Optical Properties of Solids Lecture 1 Stefan Zollner Properties Lecture 1 Zollner.pdf · Complex...

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Transcript of Optical Properties of Solids Lecture 1 Stefan Zollner Properties Lecture 1 Zollner.pdf · Complex...