publications by Dr. Stefan Zollner

List of PublicationsDr. Stefan Zollner

October 27, 2016

Refereed Journal Articles and Full-length Conference Proceeding Papers

1. U. Cebulla, S. Zollner, A. Forchel, S. Subbanna, G. Griffiths, and H. Kroemer, Hotcarrier relaxation and recombination in GaSb/AlSb quantum wells, Solid-State Electron.31, 507-510 (1988). Times cited: 2

2. S. Zollner, Sudha Gopalan, M. Garriga, J. Humlıcek, and M. Cardona, Influence of de-formation potential electron-phonon interaction on the optical transitions and interval-ley scattering in III-V- semiconductors, in 19th International Conference on the Physicsof Semiconductors, Warsaw, 1988, edited by W. Zawadzki (Institute of Physics, PolishAcademy of Sciences, Warsaw, 1988), Vol. 2, p. 1513-1516.

3. S. Zollner, Sudha Gopalan, and M. Cardona, Intervalley deformation potentials and scat-tering rates in zincblende semiconductors, Appl. Phys. Lett. 54, 614-616 (1989). Timescited: 70

4. S. Zollner, C. Lin, E. Schonherr, A. Bohringer, and M. Cardona, The dielectric functionof AlSb from 1.4 to 5.8 eV determined by spectroscopic ellipsometry, J. Appl. Phys. 66,383-387 (1989). Times cited: 44

5. S. Zollner, J. Kircher, M. Cardona, and Sudha Gopalan, Are transverse phonons impor-tant for ΓX - intervalley scattering in GaP ?, Solid-State Electron. 32, 1585-1589 (1989).Times cited: 26

6. S. Zollner, Sudha Gopalan, and M. Cardona, Microscopic theory of intervalley scatteringin GaAs: k -dependence of intervalley deformation potentials, in Phonons 89. Proceed-ings of the Third International Conference on Phonon Physics and the Sixth Interna-tional Conference on Phonon Scattering in Condensed Matter, edited by S. Hunklinger,W. Ludwig, and G. Weiss, (World Scientific, Singapore, 1990), Vol. 2, p. 787-789.

7. M. Ingels, M. Stutzmann, and S. Zollner, Optical properties of microcrystalline silicon,in Materials Issues in Microcrystalline Semiconductors, edited by P. M. Fauchet, K.Tanaka, and C. C. Tsai, (Materials Research Society, Pittsburgh, 1990), p. 229-233.

8. S. Zollner, Sudha Gopalan, and M. Cardona, Intervalley scattering times from the rigid-pseudoion method, in Ultrafast Laser Probe Phenomena in Bulk and MicrostructureSemiconductors III, edited by R. R. Alfano, Proc. SPIE 1282, 78-85 (1990). Timescited: 8

9. S. Zollner, Sudha Gopalan, and M. Cardona, Microscopic theory of intervalley scatteringin GaAs: k -dependence of deformation potentials and scattering rates, J. Appl. Phys.68, 1682-1693 (1990). Times cited: 115

10. M. Cardona and S. Zollner, Intra- and intervalley deformation potentials for electrons inGaAs, in Properties of Gallium Arsenide, EMIS Datareview Series No. 2, 2nd edition,(INSPEC, London, 1990), p. 126-138.

11. S. Zollner, U. Schmid, N. E. Christensen, C. Grein, M. Cardona, and L. Ley, LMTO andEPM calculations of strained valence bands in GaAs and InAs, in 20th InternationalConference on the Physics of Semiconductors, edited by E. M. Anastassakis and J. D.Joannopoulos, (World Scientific, Singapore, 1990), Vol. 3, p. 1735-1738.

12. J. Fraxedas, S. Zollner, L. Ley, A. Stampfl, R. C. G. Leckey, and J. D. Riley, Angleresolved constant initial state spectroscopy of GaAs, in 20th International Conference onthe Physics of Semiconductors, edited by E. M. Anastassakis and J. D. Joannopoulos,(World Scientific, Singapore, 1990), Vol. 3, p. 1751-1754.

13. S. Zollner, U. Schmid, N. E. Christensen, and M. Cardona, Conduction-band minimaof InP: Ordering and absolute energies, Appl. Phys. Lett. 57, 2339-2341 (1990). Timescited: 11

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14. S. Zollner, S. Gopalan, M. Garriga, J. Humlıcek, L. Vina, and M. Cardona, Ultrafastinitial relaxation of hot electrons and holes in tetrahedral semiconductors via deformationpotential interaction: Theory and experiment, Appl. Phys. Lett. 57, 2838-2840 (1990).Times cited: 13

15. S. Zollner, S. Gopalan, and M. Cardona, Effective deformation potentials in the descrip-tion of time-resolved and hot-electron luminescence, Solid-State Commun. 76, 877-879(1990). Times cited: 23

16. S. Zollner, M. Garriga, J. Humlıcek, S. Gopalan, and M. Cardona, Temperature de-pendence of the dielectric function and the interband critical-point parameters of GaSb,Phys. Rev. B 43, 4349-4360 (1991). Times cited: 73

17. C. H. Grein, S. Zollner, and M. Cardona, Microcopic theory of second-order Ramanscattering in silicon under uniaxial stress, Phys. Rev. B 43, 6633-6641 (1991). Timescited: 9

18. S. Zollner, S. Gopalan, and M. Cardona, The temperature dependence of the band gapsin InP, InAs, InSb, and GaSb, Solid-State Commun. 77, 485-488 (1991). Times cited:41

19. C. H. Grein, S. Zollner, and M. Cardona, Calculation of the intervalley scattering ratesin AlxGa1−xAs: Effects of alloy and phonon scattering, Phys. Rev. B 44, 12761-12768(1991). Times cited: 21

20. S. Zollner, S. Gopalan, and M. Cardona, Microscopic theory of intervalley scattering inInP, Phys. Rev. B 44, 13446-13451 (1991). Times cited: 17

21. M. Cardona, C. H. Grein, H. D. Fuchs, and S. Zollner, Isotope effects on the electronic ex-citations and phonons in semiconductors, J. Non-Crystalline Solids 141, 257-264 (1992).Times cited: 13

22. K. Pierz, M. Stutzmann, S. Zollner, W. Beyer, and C. Brillerty, Structural propertiesof Li-doped hydrogenated amorphous silicon, J. Non-Crystalline Solids 137&138, 107-110(1991). Times cited: 1

23. S. Zollner, S. Gopalan, and M. Cardona, Short-range deformation-potential interactionand its application to ultrafast processes in semiconductors, Semicond. Sci. Techn. 7,B137-B143 (1992). Times cited: 13

24. S. Zollner, M. Cardona, and S. Gopalan, Isotope and temperature shifts of direct andindirect band gaps in diamond-type semiconductors, Phys. Rev. B 45, 3376-3385 (1992).Times cited: 97

25. S. Zollner, C. H. Grein, and M. Cardona, Alloy versus phonon contributions to intervalleyscattering, in Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconduc-tors IV, edited by R. R. Alfano, Proc. SPIE 1677, 75-84 (1992). Times cited: 3

26. S. Zollner, R. T. Collins, M. S. Goorsky, P. J. Wang, M. J. Tejwani, J. O. Chu, and B.S. Meyerson, Photoluminescence from pseudomorphically strained Si1−xGex/Si quantumwells grown on silicon, in Spectroscopic Characterization Techniques for SemiconductorTechnology IV, edited by O. J. Glembocki, Proc. SPIE 1678, 81-88 (1992). Times cited:2

27. K. Eberl, S. S. Iyer, S. Zollner, J. C. Tsang, and F. K. LeGoues, Growth and straincompensation effects in the ternary Si1−x−yGexCy alloy system, Appl. Phys. Lett. 60,3033-3035 (1992). Times cited: 354

28. M. A. Tischler, R. T. Collins, J. C. Tsang, J. H. Stathis, J. L. Batstone, and S. Zollner,Optical Characteristics of porous silicon, in Light Emission from Silicon, edited by S. S.Iyer, R. T. Collins, and L. T. Canham, (Materials Research Society, Pittsburgh, 1992),Mat. Res. Soc. Symp. Proc. 256, 189-195. Times cited: 7

29. J. C. Tsang, K. Eberl, S. Zollner, and S. S. Iyer, Raman spectroscopy of CySi1−y alloysgrown by molecular beam epitaxy, Appl. Phys. Lett. 61, 961-963 (1992). Times cited: 43

30. S. Zollner, M. Cardona, and S. Gopalan, Erratum: Isotope and temperature shifts ofdirect and indirect band gaps in diamond-type semiconductors, Phys. Rev. B 46, 7337(1992). Times cited: 2

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31. M. K. Kelly, S. Zollner, and M. Cardona, Modelling the optical response of surfacesmeasured by spectroscopic ellipsometry: Application to Si and Ge, Surf. Sci. 285, 282(1993). Times cited: 50

32. J. Faul, G. Neuhold, L. Ley, J. Fraxedas, S. Zollner, J. D. Riley, and R. C. G. Leckey,Determination of conduction band states in GaAs, InP, and InAs (110), Phys. Rev. B47, 12625-12635 (1993). Times cited: 10

33. S. Zollner, M. Garriga, J. Kircher, J. Humlıcek, M. Cardona, and G. Neuhold, Tempera-ture dependence of the dielectric function and the interband critical-point parameters ofGaP, Thin Solid Films 233, 185-188 (1993). Times cited: 4

34. S. Zollner, M. Garriga, J. Kircher, J. Humlıcek, M. Cardona, and G. Neuhold, Tempera-ture dependence of the dielectric function and the interband critical-point parameters ofGaP, Phys. Rev. B 48, 7915-7929 (1993). Times cited: 69

35. S. Zollner, Model dielectric functions for native oxides on compound semiconductors,Appl. Phys. Lett. 63, 2523-2524 (1993). Times cited: 104

36. J. Faul, G. Neuhold, L. Ley, J. Fraxedas, S. Zollner, J. D. Riley, and R. C. G. Leckey,Conduction-band states in GaSb(110) and GaP(110) at the Brillouin zone center, Phys.Rev. B 48, 14301-14308 (1993). Times cited: 2

37. S. Zollner, Selecting an Operating System, Part I: OS/2 2.X, Computers in Physics 8,152-160 (1994). Times cited: 1

38. S. Zollner, C. M. Herzinger, J. A. Woollam, S. S. Iyer, A. P. Powell, and K. Eberl,Piezo-optical response of Si1−yCy alloys grown pseudomorphically on Si (100), Solid StateCommun. 96, 305-308 (1995). Times cited: 11

39. J. Faul, G. Neuhold, L. Ley, J. Fraxedas, S. Zollner, J. D. Riley, and R. C. G. Leckey,Conduction-band states and surface core excitons in InSb(110) and other III-V com-pounds, Phys. Rev. B 50, 7384-7388 (1994). Times cited: 2

40. J. M. Haisch, S. Zollner, K. G. Jensen, K. Myers, and W. S. Gornall, Characterization offemtosecond Ti:sapphire laser pulses with a commercial wavelength meter, Proceedingsof the South Dakota Academy of Science 74, 141-148 (1995).

41. S. Zollner, Theory of optical interband transitions in strained Si1−yCy alloys grown pseu-domorphically on Si (001), J. Appl. Phys. 78, 5209-5211 (1995). Times cited: 24

42. S. Zollner, C. M. Herzinger, J. A. Woollam, S. S. Iyer, A. P. Powell, and K. Eberl, Spec-troscopic Ellipsometry and Band Structure of Si1−yCy alloys grown pseudomorphicallyon Si (001), in Strained-Layer Epitaxy – Materials, Processing, and Device Applications,edited by E. A. Fitzgerald, J. Hoyt, K.-Y. Cheng, and J. Bean (Materials Research So-ciety, Pittsburgh, 1995), Mat. Res. Soc. Symp. Proc. 379, 205-210. Times cited: 2

43. S. Zollner, K. E. Junge, and R. Lange, On the origin of extra peaks in the dielectricfunction of Si1−x−yGexCy alloys grown pseudomorphically on Si(001), The Fifth AnnualIowa Space Conference, Cedar Falls, IA, October 28, 1995.

44. S. Zollner, K. E. Junge, R. Lange, and A. A. Affolder, Comment on “Optical Charac-terization of Si1−xCx/Si (0≤ x ≤0.014) Semiconductor Alloys”, Jpn. J. Appl. Phys. 35,5684-5685 (1996). Times cited: 3

45. R. Lange, K. E. Junge, S. Zollner. S. S. Iyer, A. P. Powell, and K. Eberl, Dielectricresponse of strained and relaxed Si1−x−yGexCy alloys grown by MBE on Si (001), J.Appl. Phys. 80, 4578-4586 (1996). Times cited: 29

46. K. D. Myers, S. Zollner, R. Lange, K. G. Jensen, J. M. Dolan, D. W. Bailey, and C. J.Stanton, Femtosecond time-resolved reflectivity of Ge, in Proceedings of the 23rd Inter-national Conference on the Physics of Semiconductors, edited by M. Scheffler and R.Zimmermann, (World Scientific Singapore, 1996), p. 673-676.

47. S. Zollner, K. D. Myers, K. G. Jensen, J. M. Dolan, D. W. Bailey, and C. J. Stanton,Femtosecond interband hole scattering in Ge studied by pump-probe reflectivity, SolidState Commun. 104, 51-55 (1997). Times cited: 14

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48. S. Zollner and M. Cardona, Intra- and Intervalley deformation potentials in GaAs, inProperties of Gallium Arsenide, edited by M. R. Brozel and G. E. Stillman, EMIS Datare-view Series No. 16, 3rd edition, (Institute of Electrical Engineers, Stevenage, Hertford-shire, UK, 1996).

49. K. E. Junge, R. Lange, J. M. Dolan, S. Zollner, M. Dashiell, B. A. Orner, and J. Kolodzey,Dielectric response of thick low dislocation-density Ge epilayers grown on (001) Si, Appl.Phys. Lett. 69, 4084-4086 (1996). Times cited: 10

50. Stefan Zollner, Growth and characterization of Si1−x−yGexCy alloys for use in heterojunc-tion bipolar transistors, The Sixth Annual Iowa Space Conference, Ames, IA, November8-9, 1996.

51. K. E. Junge, R. Lange, J. M. Dolan, S. Zollner, M. Dashiell, B. A. Orner, and J. Kolodzey,Dielectric response of thick low dislocation-density Ge epilayers grown on (001) Si, TheSixth Annual Iowa Space Conference, Ames, IA, November 8-9, 1996.

52. R. Lange, K. E. Junge, S. Zollner. S. S. Iyer, A. P. Powell, and K. Eberl, Dielectricresponse of strained and relaxed Si1−x−yGexCy, The Sixth Annual Iowa Space Conference,Ames, IA, November 8-9, 1996.

53. S. Zollner, K. D. Myers, J. M. Dolan, D. W. Bailey, and C. J. Stanton, Theory offemtosecond ellipsometry in Ge at 1.5 eV, Thin Solid Films 313-314, 568-573 (1998).Times cited: 7

54. S. J. Lee, R. Lange, S. Hong, S. Zollner, P. C. Canfield, A. F. Panchula, B. N. Harmon, andD. W. Lynch, Theoretical and experimental determination of optical and magneto-opticalproperties of LuFe2 single crystal, Thin Solid Films 313-314, 222-227 (1998). Times cited:6

55. K. E. Junge, N. R. Voss, R. Lange, J. M. Dolan, S. Zollner, M. Dashiell, D. A. Hits, B.A. Orner, R. Jonczyk, and J. Kolodzey, Optical properties and band structure of Ge1−yCy

and Ge-rich Si1−x−yGexCy alloys, Thin Solid Films 313-314, 172-176 (1998). Times cited:1

56. R. Lange, S. J. Lee, D. W. Lynch, P. C. Canfield, B. N. Harmon, and S. Zollner, Ellip-sometric and Kerr effect studies of Pt3−TM (TM=Mn, Co), Phys. Rev. B 58, 351-358(1998). Times cited: 30

57. S. Zollner and J. N. Hilfiker, Ellipsometric Studies of Bulk 4H and 6H SiC Substrates,phys. stat. solidi (a) 166, R9 (1998). Times cited: 6

58. S. Zollner, R. Liu, J. Christiansen, W. Chen, K. Monarch, T.-C. Lee, R. Singh, J. Yater,W. M. Paulson, and C. Feng, Optical studies of phosphorus-doped poly-Si films, in Charac-terization and Metrology for ULSI Technology, edited by D.G. Seiler, A.C. Diebold, W.M.Bullis, T.J. Shaffner, R. McDonald, and E.J. Walters, (American Institute of Physics,Woodbury, NY, 1998), p. 298-302.

59. S. Zollner, R. Liu, J. Christiansen, W. Chen, K. Monarch, T.-C. Lee, R. Singh,J. Yater, W. M. Paulson, and C. Feng, Raman and spectroscopic ellipsometry stud-ies of phosphorus-doped poly-silicon films, in Amorphous and Microcrystalline SiliconTechnology-1998, edited by R. Schropp, H.M. Branz, M. Hack, I. Shimizu, and S. Wag-ner, (Materials Research Society, Pittsburgh, 1998), p. 957-962. Times cited: 1

60. K.E. Junge, R. Lange, J. M. Dolan, S. Zollner, J. Humlıcek, M. Dashiell, D. A. Hits, B.A. Orner, and J. Kolodzey, Ellipsometry studies, optical properties, and band stuctureof Ge1−yCy, Ge-rich Si1−x−yGexCy, and boron-doped Si1−xGex alloys, in Epitaxy andApplications of Si-Based Heterostructures, edited by E.A. Fitzgerald, D.C. Houghton,and P.M. Mooney, (Materials Research Society, Pittsburgh, 1998), p. 125-129. Timescited: 1

61. R. Liu, S. Zollner, M. Liaw, D. O’Meara, and N. Cave, Raman spectroscopy of epitaxialSi/Si1−xGex heterostructures, in Epitaxy and Applications of Si-Based Heterostructures,edited by E.A. Fitzgerald, D.C. Houghton, and P.M. Mooney, (Materials Research Soci-ety, Pittsburgh, 1998), p. 63-68. Times cited: 1

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62. S. Zollner, J. P. Carrejo, T. E. Tiwald, and J. A. Woollam, The origin of the Berremaneffect in SiC homostructures, phys. stat. solidi (b) 208, R3 (1998). Times cited: 10

63. S. Zollner, J. G. Chen, E. Duda, T. Wetteroth, S. R. Wilson, and J. N. Hilfiker, Dielectricfunctions of bulk 4H and 6H SiC and spectroscopic ellipsometry studies of epitaxial 3CSiC on Si, J. Appl. Phys. 85, p. 8353-8361 (1999). Times cited: 57

64. H. M. Liaw, S. Q. Hong, P. Fejes, D. Werho, H. Tompkins, S. Zollner, S.R. Wilson,K. J. Linthicum, and R. F. Davis, 3C-SiC buffer layers converted from Si at a lowtemperature, in Wide-Bandgap Semiconductors for High-Power, High-Frequency, andHigh-Temperature Applications-1999, edited by S. C. Binari, A. A. Burk, M. R. Melloch,and C. Nguyen, (Materials Research Society, Pittsburgh, 1999), 219-224. Times cited: 1

65. S. Zollner, A. Konkar, R.B. Gregory, S. R. Wilson, S.A. Nikishin, and H. Temkin, Di-electric function of AlN grown on Si (111) by MBE, in Wide-Bandgap Semiconductorsfor High-Power, High-Frequency, and High-Temperature Applications-1999, edited by S.C. Binari, A. A. Burk, M. R. Melloch, and C. Nguyen, (Materials Research Society,Pittsburgh, 1999), 231-236. Times cited: 5

66. S. Q. Hong, H. M. Liaw, K. Linthicum, R. F. Davis, P. Fejes, S. Zollner, M. Kottke,and S. R. Wilson, Epitaxial growth of AlN on Si substrates with intermediate 3C-SiC asbuffer-layers, in Wide-Bandgap Semiconductors for High-Power, High-Frequency, andHigh-Temperature Applications-1999, edited by S. C. Binari, A. A. Burk, M. R. Melloch,and C. Nguyen, (Materials Research Society, Pittsburgh, 1999), 407-412.

67. T.E. Tiwald, J.A. Woollam, S. Zollner, J. Christiansen, R.B. Gregory, T. Wetteroth,S.R. Wilson, and A.R. Powell, Carrier concentration and lattice absorption in bulk andepitaxial silicon carbide determined using infrared ellipsometry, Phys. Rev. B 60, 11464-11474 (1999). Times cited: 83

68. S. Zollner, R. Liu, A. Konkar, J. Gutt, S.R. Wilson, T.E. Tiwald, J.A. Woollam, and J.N.Hilfiker, Dielectric function of polycrystalline SiC from 190 nm to 15 µm, Phys. StatusSolidi (b) 215, p. 21-25 (1999). Times cited: 1

69. S.A. Nikishin, V.G. Antipov, S. Francouer, N.N. Faleev, G.A. Seryogin, V.A. Elyukhin,H. Temkin, T.I. Prokofyeva, M. Holtz, A. Konkar, S. Zollner, High quality AlN grownon Si(111) by gas source molecular beam epitaxy with ammonia, Appl. Phys. Lett. 75, p.484-486 (1999). Times cited: 71

70. S. Zollner, T.-C. Lee, K. Noehring, A. Konkar, N.D. Theodore, W.M. Huang, D. Monk,T. Wetteroth, S.R. Wilson, and J.N. Hilfiker, Thin-film metrology of silicon-on-insulatormaterials, Appl. Phys. Lett. 76, 46-48 (2000). Times cited: 8

71. H.M. Liaw, R. Doyle, P.L. Fejes, S. Zollner, A. Konkar, K.J. Linthicum, T. Gehrke, andR.F. Davis, Crystallinity and microstructures of aluminum nitride films deposited onSi(111) substrates, Solid-State Electronics 44, p. 747-755 (2000). Times cited: 22

72. A. Demkov, R. Liu, S. Zollner, D. Werho, M. Kottke, R.B. Gregory, M. Angyal, S.Filipiak, L.C. McIntyre, and M.D. Ashbaugh, Theoretical and experimental analysis ofthe low dielectric constant of fluorinated silica, in Optical Properties of Materials, editedby E.L. Shirley, J.R. Chelikowsky, S.G. Louie, and G. Martinez, (Materials ResearchSociety, Pittsburgh, 2000), 255-260. Times cited: 3

73. S. Zollner, A.A. Demkov, R. Liu, P.L. Fejes, R.B. Gregory, P. Alluri, J. Curless, Z. Yu,J. Ramdani, R. Droopad, T.E. Tiwald, J.N. Hilfiker, J.A. Woollam, Optical propertiesof bulk and thin-film SrTiO3 on Si and Pt, J. Vac. Sci. Technol. B 18, 2242-2254 (2000).Times cited: 80

74. S. Zollner, Ellipsometry of platinum films on silicon, phys. stat. solidi (a) 177, R7-8(2000). Times cited: 1

75. S. Zollner, J. Hildreth, R. Liu, P. Zaumseil, M. Weidner, and B. Tillack, Optical constantsand ellipsometric thickness determination of strained Si1−x−yGex:C layers on Si (100)and related heterostructures, J. Appl. Phys. 88, 4102-4108 (2000). Times cited: 28

76. S. Zollner, Optical properties and band structure of unstrained and strained Si1−xGex

and Si1−x−yGexCy alloys, in Silicon-Germanium Carbon Alloys. Growth, Properties and

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Applications, edited by S. Pantelides and S. Zollner, pp. 387-444, (Taylor and Francis,New York, 2002).

77. M. Holtz, W.M. Duncan, S. Zollner, and R. Liu, Visible and ultraviolet Raman scatteringstudies of Si1−xGex alloys, J. Appl. Phys. 88, 2523-2528 (2000). Times cited: 85

78. S. Zollner, A.A. Demkov, R. Liu, J.A. Curless, Z. Yu, J. Ramdani, and R. Droopad,Optical properties of thin-film SrTiO3 on Si grown by MBE, in Recent Developments inOxide and Metal Epitaxy - Theory and Experiment, edited by M. Yeadon, S. Chiang,R.F.C. Farrow, J.W. Evans, and O. Auciello, (Materials Research Society, Pittsburgh,2000), 167-171.

79. A. Demkov, S. Zollner, R. Liu, D. Werho, M. Kottke, R.B. Gregory, M. Angyal, S. Filip-iak, and G.B. Adams, Theoretical and experimental analysis of the low dielectric constantof fluorinated silica, in Materials, Technology and Reliability for Advanced Interconnectsand Low-k Dielectrics, edited by G.S. Oehrlein, K. Maex,Y.-C. Joo, S. Ogawa, and J.T.Wetzel, (Mat. Res. Soc., Pittsburgh, 2001), pp. 1-6.

80. T. Prokofyeva, M. Seon, J. Vanbuskirk, M. Holtz, S.A. Nikishin, N.N. Faleev, H. Temkin,and S. Zollner, Vibrational properties of AlN grown on silion (111), Phys. Rev. B 63,125313-1 (2001). Times cited: 144

81. S. Zollner and E. Apen, Optical constants for metrology of hydrogenated amorphoussilicon-nitrogen alloys on Si, in Characterization and Metrology for ULSI Technology2000, edited by D.G. Seiler, A.C. Diebold, T.J. Shaffner, R. McDonald, W.M. Bullis,P.J. Smith, and E.M. Secula, (American Institute of Physics, Melville, NY, 2001), p.532-537. Times cited: 5

82. S. Lu, M. Kottke, S. Zollner, and W. Chen, High depth resolution secondary ion massspectrometry analysis of Si1−xGex:C HBT structures, in Characterization and Metrol-ogy for ULSI Technology 2000, edited by D.G. Seiler, A.C. Diebold, T.J. Shaffner, R.McDonald, W.M. Bullis, P.J. Smith, and E.M. Secula, (American Institute of Physics,Melville, NY, 2001), p. 672-676.

83. S. Zollner, A. Konkar, R. Liu, M. Canonico, Q. Xie, G.F. Grom, Q. Zhu, R. Krishnan,P.M. Fauchet, and L. Tsybeskov, Optical and structural characterization of nanocrys-talline silicon superlattices: Toward nanoscale silicon metrology, in Microcrystalline andNanocrystalline Semiconductors 2000, edited by P.M. Fauchet, J.M. Buriak, L.T. Can-ham, N. Koshida, and B.E. White, (Mat. Res. Soc., Pittsburgh, 2001), pp. F5.1.1-6.Times cited: 1

84. S. Zollner and D. Zarr, Optical constants of GaAs from 0.7 to 6.6 eV for thicknessmetrology in compound semiconductor manufacturing, in 2000 IEEE International Sym-posium on Compound Semiconductors, edited by M. Melloch and M.A. Reed, (IEEE,Piscataway, NJ, 2000), p. 13-18.

85. M. Holtz, T. Prokofyeva, M. Seon, J. Vanbuskirk, K. Copeland, S.A. Nikishin, N.N.Faleev, H. Temkin, S. Zollner, and A. Konkar, Vibrational and optical properties ofAlN on Si(111) using gas-source molecular beam epitaxy, in 2000 IEEE InternationalSymposium on Compound Semiconductors, edited by M. Melloch and M.A. Reed, (IEEE,Piscataway, NJ, 2000), p. 251-256.

86. S. Zollner, Critical-point parameters and optical constants of GaAs from 0.73 to 6.60 eVby spectroscopic ellipsometry, J. Appl. Phys. 90, 515-517 (2001). Times cited: 51

87. R. Liu, S. Zollner, P. Fejes, R. Gregory, S. Lu, K. Reid, D. Gilmer, B.-Y. Nguyen, J. Yu,R. Droopad, J. Curless, A. Demkov, J. Finder, and K. Eisenbeiser, Materials and physicalproperties of novel high-k and medium-k gate dielectrics, in Gate Stack and Silicide Issuesin Silicon Processing II, edited by S.A. Campbell, L. Clevenger, P.B. Griffin, and C.C.Hobbs, (Mat. Res. Soc., Pittsburgh, 2002), pp. K1.1.1-12. Times cited: 2

88. J. Taraci, S. Zollner, M.R. McCartney, J. Menendez, D.J. Smith, J. Tolle, M. Bauer, E.Duda, N.V. Edwards, and J. Kouvetakis, Optical, vibrational, and structural properties ofGe-Sn alloys by UHV-CVD, in Progress in Semiconductor Materials for OptoelectronicApplications, edited by E.D. Jones, O. Manasreh, K.D. Choquette, D.J. Friedman, and

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D.K. Johnstone, Mat. Res. Soc. Proc. 692, p. 631-636, (Mat. Res. Soc., Warrendale, PA,2002).

89. J. Taraci, S. Zollner, M.R. McCartney, J. Menendez, M.A. Santana-Aranda, D.J. Smith,A. Haaland, A.V. Tutukin, G. Gunderson, G. Wolf, and J. Kouvetakis, Synthesis ofsilicon-based infrared semiconductors in the Ge-Sn system using molecular chemistrymethods, J. Am. Chem. Soc. 123, 10980-10987 (2001). Times cited: 20

90. N.V. Edwards, O.P.A. Lindquist, L.D. Madsen, S. Zollner, K. Jarrehdahl, C. Cobet, S. Pe-ters, N. Esser, A. Konkar, and D.E. Aspnes, Determination and critical assessment of theoptical properties of common substrate materials used in III/V nitride heterostructureswith vacuum ultraviolet spectroscopic ellipsometry, in GaN and Related Alloys - 2001,edited by J.E. Northrup, J. Neugebauer, D.C. Look, S.F. Chichibu, and H. Riechert,Mat. Res. Soc. Proc. 693, p. 509-514 (Mat. Res. Soc., Warrendale, PA, 2002).

91. N.V. Edwards, J. Vella, Q. Xie, S. Zollner, I. Adhihetty, R. Liu, T.E. Tiwald, C. Russell, J.Vires and K.H. Junker, Spectroscopic ellipsometry as a potential in-line optical metrologytool for relative porosity measurements of low-k dielectric films, in Surface Engineering2001 - Fundamentals and Applications, edited by W.J. Meng, A. Kemar, G.L. Doll, Y.T.Cheng, S. Veprek, T.-W. Chung, Mat. Res. Soc. Proc. 697, p. 101-106 (Mat. Res. Soc.,Warrendale, PA, 2002). Times cited: 1

92. T. Wagner, J.N. Hilfiker, T.E. Tiwald, C.L. Bungay, and S. Zollner, Materials charac-terization in the vacuum ultraviolet with variable angle spectroscopic ellipsometry, phys.stat. solidi (a) 188, 1553 (2001). Times cited: 9

93. S. Zollner, M.G. Sadaka, N.V. Edwards, C.S. Cook, Q. Xie, H.T. Le, J. Hildreth, and A.S.Morton, In-line optical and x-ray measurements of thickness and composition for man-ufacturing of heterostructure bipolar transistors, GaAs MANTECH Conference, April8-11, 2002, San Diego, CA, Digest of papers, page 187-190.

94. M. Bauer, J. Taraci, J. Tolle, A.V.G. Chizmeshya, S. Zollner, D.J. Smith, J. Menendez,C. Hu, and J. Kouvetakis, Ge-Sn semiconductors for band-gap and lattice engineering,Appl. Phys. Lett. 81, 2992-2994 (2002). Times cited: 179

95. M.R. Bauer, J. Tolle, A.V.G. Chizmeshya, S. Zollner, J. Menendez, and J. Kouvetakis,New Ge-Sn materials with adjustable bandgaps and lattice constants, in Progress in Semi-conductors II - Electronic and Optoelectronic Applications, edited by B.D. Weaver, M.O. Manasreh, C. Jagadish, and S. Zollner, (Mat. Res. Soc., Warrendale, PA, 2003), p.49-54. Times cited: 5

96. J. Schaeffer, N.V. Edwards, R. Liu, D. Roan, B. Hradsky, R. Gregory, J. Kulik, E. Duda,L. Contreras, J. Christiansen, S. Zollner, P. Tobin, B.-Y. Nguyen, R. Nieh, M. Ramon,R. Rao, R. Hegde, R. Rai, J. Baker, and S. Voight, HfO2 gate dielectrics deposited viatetrakis diethylamido hafnium, J. Electrochem. Soc. 150, F67-74 (2003). Times cited: 52

97. Q. Xie, R. Liu, X.-D. Wang, M. Canonico, E. Duda, S. Lu, C. Cook, A.A. Volinsky, S.Zollner, S.G. Thomas, T. White, A. Barr, M. Sadaka, and B.-Y. Nguyen, Characterizationtechniques for evaluating strained Si CMOS materials, in Characterization and Metrologyfor ULSI Technology, edited by D.G. Seiler, A.C. Diebold, T.J. Shaffner, R. McDonald,S. Zollner, R.P. Khosla, and E.M. Secula, (American Institute of Physics, Melville, NY,2003), AIP Conf. Proc. 683, 223-227. Times cited: 1

98. C.S. Cook, T. Daly, R. Liu, M. Canonico, M. Erickson, Q. Xie, R. Gregory, and S. Zollner,Properties, process control, and characterization of PECVD silicon nitrides for compoundsemiconductor devices, GaAs MANTECH Conference, May 19-22, 2003, Scottsdale, AZ,Digest of papers, page 173-175.

99. M. Passlack, N. Medendorp, S. Zollner, R. Gregory, and D. Braddock, Optical and elec-trical properties of GdxGa0.4−xO0.6 films in GdxGa0.4−xO0.6/Ga2O3 gate dielectric stackson GaAs, Appl. Phys. Lett. 84, 2521 (2004). Times cited: 21

100. C.S. Cook, S. Zollner, M.R. Bauer, P. Aella, J. Kouvetakis, and J. Menendez, Opticalconstants and interband transitions of Ge1−xSnx alloys (x <0.2) grown on Si by UHV-CVD, Thin Solid Films 455-456, 217-221 (2004). Times cited: 23

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101. Candi S. Cook, Terry Daly, Ran Liu, Michael Canonico, Q. Xie, R.B Gregory, and StefanZollner, Spectroscopic Ellipsometry for in-line monitoring of silicon nitrides, Thin SolidFilms 455-456, 794-797 (2004). Times cited: 8

102. Stefan Zollner, Ran Liu, A.A. Volinsky, Ted White, Bich-Yen Nguyen, and C.S. Cook,Gate oxide metrology and silicon piezooptics, Thin Solid Films 455-456, 261-265 (2004).Times cited: 5

103. M.R. Bauer, C.S. Cook, P. Aella, J. Tolle, J. Kouvetakis, P.A. Crozier, A.V.G.Chizmeshya, D.J. Smith, and S. Zollner, SnGe superstructure materials for Si-basedoptoelectronics, Appl. Phys. Lett. 83, 3489 (2003). Times cited: 36

104. V. Vasilyev, A. Drehman, H. Dauplaise, L. Bouthilette, M. Roland, A. Volinsky, S. Zoll-ner, and W. Qin, Optical and dielectric properties of Eu- and Y-polytantalate thin films,in Fundamentals of Novel Oxide/Semiconductor Interfaces, edited by C.R. Abernathy,E. Gusev, D. Schlom, and S. Stemmer, Mat. Res. Soc. Symp. Proc. 786, (Mat. Res. Soc.,Warrendale, PA, 2003), p. E3.31.1.

105. P. Aella, C. Cook, J. Tolle, S. Zollner, A.V.G. Chizmeshya, and J. Kouvetakis, Structuraland optical properties of SnxSiyGe1−x−y alloys, Appl. Phys. Lett. 84, 888 (2004). Timescited: 63

106. S. Pozder, J.-Q. Lu, Y. Kwon, S. Zollner, J. Yu, J.J. McMahon, T.S. Cale, K. Yu, andR.J. Gutmann, Back-end compatibility of bonding and thinning processes for a wafer-level 3D interconnect technology platform, Proceedings of the IEEE 2004 InternationalInterconnect Technology Conference Proceedings, (IEEE, Piscataway, NJ, 2004), p. 102-104. Times cited: 32

107. S. Pozder, M. Canonico, S. Zollner, R. Liu, K. Yu, and J.-Q. Lu, Raman and XRD strainanalysis of 3D bonded and thinned SOI wafers, in Physics of Semiconductors, editedby J. Menendez and C.G. Van de Walle, (American Institute of Physics, Melville, NY,2005), p. 1495-1496.

108. B.-Y. Nguyen, A. Thean, T. White, A. Barr, Q. Xie, S. Zollner, M. Sadaka, X.-D. Wang,A. Vandooren, L. Mathew, M. Zavala, D. Zhang, D. Eades, Z. Shi, V. Vartanian, S.Thomas, T. Stephen, B. Goolsby, R. Liu, T. Nguyen, V. Dhandapani, J. Jiang, R. Rai,D. Theodore, M. Kottke, R. Gregory, M. Canonico, R. Noble, S. Kalpat, M. Mendicino,M. Orlowski, J. Mogab, and S. Venkatesan, Advanced substrates and devices for nanoscaleCMOS, Yield Management Solutions Magazine 6, 48 (2004).

109. Stefan Zollner, Wentao Qin, R.B. Gregory, J. Kulik, N.V. Edwards, Kurt Junker, andT.E. Tiwald, Birefringence and VIS/VUV optical absorption of graphite-like amorphouscarbon, in Physics of Semiconductors, edited by J. Menendez and C.G. Van de Walle,(American Institute of Physics, Melville, NY, 2005), p. 111-112.

110. M. Sadaka, A.V.-Y. Thean, A. Barr, D. Tekleab, S. Kalpat, T. White, T. Nguyen, R.Mora, P. Beckage, D. Jawarani, S. Zollner, M. Kottke, R. Liu, M. Canonico, Q.-H. Xie,X.-D. Wang, S. Parsons, D. Eades, M. Zavala, B.-Y. Nguyen, C. Mazure, and J. Mogab,Fabrication and operation of sub-50nm strained Si on Si1−xGex on Insulator (SGOI)CMOSFETs, 2004 IEEE International SOI Conference, Charleston, SC, October 4-7,2004, p. 209 (2004). Times cited: 11

111. C.S. Cook, V. D’Costa, P. Aella, J. Tolle, J. Kouvetakis, S. Zollner, and J. Menendez,Compositional dependence of critical point transitions in Ge1−xSnx alloys, in Physics ofSemiconductors, edited by J. Menendez and C.G. Van de Walle, (American Institute ofPhysics, Melville, NY, 2005), p. 65-66. Times cited: 1

112. B.-Y. Nguyen, A. Thean, T. White, A. Vandooren, M. Sadaka, L. Mathew, A. Barr, S.Thomas, M. Zavala, Da Zhang, D. Eades, Zhong-Hai Shi, J. Schaeffer, D. Triyoso, S.Samavedam, V. Vartanian, T. Stephen, B. Goolsby, S. Zollner, R. Liu, R. Noble, ThienNguyen, V. Dhandapani, B. Xie, Xang-Dong Wang, J. Jiang, R. Rai, M. Sadd, M. Ra-mon, S. Kalpat, L. Prabhu, V. Kaushik, Y. Du, T. Dao, M. Mendicino, M. Orlowski,P. Tobin, J. Mogab, S. Venkatesan, Integration challenges of new materials and device

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architectures for IC applications, Proceedings of the 2004 International Conference on In-tegrated Circuit Design and Technology, Austin, TX, 17-20 May 2004, (IEEE, Piscataway,NJ, 2004), p. 237-243. Times cited: 1

113. S. Zollner, Y. Liang, R. Gregory, P. Fejes, D. Theodore, Z. Yu, D. Triyoso, J. Curless,and C. Tracy, Limits of optical and X-ray metrology applied to thin gate dielectrics, inCharacterization and Metrology for ULSI Technology 2005, edited by D.G. Seiler, A.C.Diebold, R. McDonald, C.R. Ayre, R.P. Khosla, S. Zollner, and E.M. Secula, (AmericanInstitute of Physics, Melville, NY, 2005), AIP Conf. Proc. vol. 788, p. 166-171. Timescited: 1

114. M. Bauer, S. Zollner, N.D. Theodore, M. Canonico, P. Tomasini, B.Y. Nguyen, and C.Arena, Si3H8 based epitaxy of biaxially stressed silicon films doped with carbon and ar-senic for CMOS applications, in Semiconductor Defect Engineering Materials, SyntheticStructures, and Devices , edited by S. Ashok, J. Chevallier, B.L. Soppori, M. Tabe, andP. Kiesel, (Materials Research Society, Warrendale, PA, 2005), pp. 143-148. Times cited:2

115. B.-Y. Nguyen, A. Thean, D. Zhang, T. White, M. Sadaka, D. Triyoso, J. Schaeffer, B.Goolsby, V. Dhandapani, T. Nguyen, V. Vartanian, L. McCormick, D. Theodore, S.Zollner, Q. Xie, X.-D. Wang, M. Canonico, M. Kottke, Z. Shi, L. Mathew, M. Zavala, C.Parker, H. Collard, J. Hildreth, L. Prabhu, R. Rai, S. Murphy, P. Montgomery, S. Kalpat,M. Ramon, A. Demkov, B. Taylor, D. Gilmer, V. Adams, J. Jiang, J. Chen, C.-H. Chang,V. Kaushik, L. Chandna, M. Sadd, A. Barr, A. Vandooren, D. Pham, M. Mendicino, J.Cheek, V. Kolagunta, Hsing Tseng, B. White, P. Tobin, M. Orlowski, S. Venkatesan, andJ. Mogab, New materials, processes and device structures for 65nm CMOS technologynode and beyond, J. Electrochem. Soc. 501, 637 (2006).

116. V. Vartanian, M. Sadaka, S. Zollner, A.V.-Y. Thean, T. White, B.-Y. Nguyen, M. Zavala,L. McCormick, L. Prabhu, D. Eades, S. Parsons, H. Collard, K. Kim, J. Jiang, V. Dhanda-pani, J. Hildreth, R. Powers, G. Spencer, N. Ramani, J. Mogab, M. Kottke, M. Canonico,Q. Xie, X.-D. Wang, J. Vella, L. Contreras, D. Theodore, B. Lu, T. Kriske, R. Gregory,and R. Liu, Metrology Challenges for 45nm Strained-Si Devices, in Characterization andMetrology for ULSI Technology 2005, edited by D.G. Seiler, A.C. Diebold, R. McDon-ald, C.R. Ayre, R.P. Khosla, S. Zollner, and E.M. Secula, (American Institute of Physics,Melville, NY, 2005), AIP Conf. Proc. vol. 788, p. 214-221. Times cited: 5

117. D.H. Triyoso, R.I. Hegde, S. Zollner, M.E. Ramon, S. Kalpat, R. Gregory, X.-D. Wang,J. Jiang, M. Raymond, R. Rai, D. Werho, D. Roan, B.E. White, and P.J. Tobin, Impactof titanium addition on film characteristics of HfO2 gate dielectrics deposited by atomiclayer deposition, J. Appl. Phys. 98, 54104 (2005). Times cited: 63

118. V. Vartanian, B.-Y. Nguyen, A. Thean, D. Zhang, T. White, M. Sadaka, B. Goolsby, V.Dhandapani, L. McCormick, D. Theodore, S. Zollner, Q. Xie, X.-D. Wang, M. Canonico,M. Kottke, Z. Shi, L. Mathew, M. Zavala, C. Parker, H. Collard, J. Hildreth, L. Prabhu,R. Rai, S. Murphy, P. Montgomery, S. Kalpat, M. Ramon, V. Adams, J. Jiang, J. Chen,C.-H. Chang, V. Kaushik, M. Sadd, A. Barr, A. Vandooren, D. Pham, and V. Kola-gunta, Channel substrate engineering for the 65 nm CMOS technology node and beyond,Semiconductor Fabtech 26, 75 (2005).

119. R. Roucka, J. Tolle, C. Cook, A.V.G. Chizmeshya, J. Kouvetakis, V. D’Costa, J. Menen-dez, Z.D. Chen, and S. Zollner, Versatile buffer layer architectures based on Ge1−xSnx

alloys, Appl. Phys. Lett. 86, 191912 (2005). Times cited: 39

120. D. Zhang, B.-Y. Nguyen, T. White, B. Goolsby, T. Nguyen, V. Dhandapani, J. Hildreth,M. Foisy, V. Adams, Y. Shiho, A. Thean, D. Theodore, M. Canonico, S. Zollner, S. Bagchi,S. Murphy, R. Rai, J. Jiang, M. Jahanbani, R. Noble, M. Zavala, R. Cotton, D. Eades,S. Parsons, P. Montgomery, A. Martinez, B. Winstead, M. Mendicino, J. Cheek, J. Liu,P. Grudowski, N. Ramani, P. Tomasini, C. Arena, C. Werkhoven, H. Kirby, C.H. Chang,C.T. Lin, H.C. Tuan, Y.C. See, S. Venkatesan, V. Kolagunta, N. Cave, and J. Mogab,Embedded SiGe S/D PMOS on thin body SOI substrate with drive current enhancement,

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2005 Symposium on VLSI Technology, Kyoto, Japan, June 14-16, 2005, p. 26. Timescited: 30

121. A.V.Y. Thean, T. White, M. Sadaka, L. McCormick, M. Ramon, R. Mora, P. Beck-age, M. Canonico, X.-D. Wang, S. Zollner, S. Murphy, V. Van der Pas, M. Zavala,R. Noble, O. Zia, L.-G. Kang, V. Kolagunta, N. Cave, J. Cheek, M. Mendicino, B.-Y.Nguyen, M. Orlowski, S. Venkatesan, J. Mogab, C.H. Chang, Y.H. Chiu, H.C. Tuan,Y.C. See, M.S. Liang, Y.C. Sun, I. Cayrefourcq, F. Metral, M. Kennard, and C. Mazure,Performance of super-critical strained-Si directly on insulator (SC-SSOI) CMOS basedon high-performance PD-SOI technology, 2005 Symposium on VLSI Technology, Kyoto,Japan, June 14-16, 2005, p. 134. Times cited: 20

122. R.I. Hegde, D.H. Triyoso, P.J. Tobin, S. Kalpat, M.E. Ramon, H.-H. Hseng, J.K. Scha-effer, E. Luckowski, W.J. Taylor, C.C. Capasso, D.C. Gilmer, M. Moosa, A. Haggag, M.Raymond, D. Roan, J. Nguyen, L.B. La, E. Hebert, R. Cotton, X.-D. Wang, S. Zollner,R. Gregory, D. Werho, R.S. Rai, L. Fonseca, M. Stoker, C. Tracy, B.W. Chan, Y.H. Chiu,and B.E. White, Jr., Microstructure Modified HfO2 Using Zr Addition with TaxCy Gatefor Improved Device Performance and Reliability, International Electron Devices Meet-ing, 5-7 December 2005, Washington, DC, (IEEE, Piscataway, NJ, 2005), p. 4. Timescited: 17

123. G. Lucovsky, C.C. Fulton, Y. Zhang, Y. Zhou, J. Luning, L.F. Edge, J.L. Whitten, R.J.Nemanich, H. Ade, D.G. Schlom, V.V. Afanase’v, A. Stesman, S. Zollner, D. Triyoso,and B.R. Rogers, Conduction band-edge states associated with the removal of d-statedegeneracies by the Jahn-Teller effect, IEEE Trans. on Device and Materials Reliability5, 65 (2005). Times cited: 62

124. J. Schmidt, G. Vogg, F. Bensch, S. Kreuzer, S. Zollner, R. Liu, Q. Xie, and P. Wen-nekers, Spectroscopic techniques for characterization of high-mobility strained-Si CMOS,Materials Science in Semiconductor Processing 8, 267-271 (2005). Times cited: 14

125. V. R. d’Costa, C. S. Cook, A. G. Birdwell, C. L. Littler, M. Canonico, S. Zollner, J.Kouvetakis, and J. Menendez, Optical critical points of thin-film Ge1−ySny alloys: Acomparative Ge1−ySny/Ge1−xSix study, Phys. Rev. B 73, 125207 (2006). Times cited:157

126. V.R. d’Costa, C.S. Cook, J. Menendez, J. Tolle, J. Kouvetakis, and S. Zollner, Trans-ferability of optical bowing parameters between binary and ternary group-IV alloys, SolidState Commun. 138, 309 (2006). Times cited: 34

127. G. Lucovsky, Y. Zhang, J. Luning, V.V. Afanse’v, A. Stesmans, S. Zollner, D. Triyoso,B.R. Rogers, and J.L. Whitten, Intrinsic band edge traps in nano-crystalline HfO2 gatedielectrics, Microelectronic Engineering 80, 110-113 (2005). Times cited: 24

128. S. Zollner, W. Qin, R.B. Gregory, N.V. Edwards, K. Junker, and T.E. Tiwald, Stress-induced anisotropy of graphite-like amorphous carbon, J. Appl. Phys. 101, 053522 (2007).Times cited: 4

129. M.K. Niranjan, S. Zollner, L. Kleinman, and A.A. Demkov, Theoretical investigation ofPtSi surface energies and work functions, Phys. Rev. B 73, 195332 (2006). Times cited:20

130. B.Y. Nguyen, D. Zhang, A. Thean, P. Grudowski, V. Vartanian, T. White, S. Zollner, D.Theodore, B. Goolsby, H. Desjardins, L. Prabhu, R. Garcia, J. Hackenberg, V. Dhanda-pani, S. Murphy, R. Rai, J. Conner, P. Montgomery, C. Parker, J. Hildreth, R. Noble,M. Jahanbani, D. Eades, J. Cheek, B. White, J. Mogab, and S. Venkatesan, Uniaxialand biaxial strain for CMOS performance enhancement, Conference Digest of the ThirdInternational Silicon Germanium Device and Technology Meeting (ISTDM 2006), p. 234.Times cited: 5

131. S. Zollner, V. Vartanian, J.P. Liu, P. Zaumseil, H.J. Osten, A.A. Demkov, and B.-Y.Nguyen, Optical properties, elasto-optical effects, and critical-point parameters of biax-ially stressed Si1−yCy alloys on Si (001), Conference Digest of the Third InternationalSilicon Germanium Device and Technology Meeting (ISTDM 2006), p. 90.

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132. V. Vartanian, S. Zollner, A. V.-Y. Thean, T. White, B.-Y. Nguyen, L. Prabhu, D. Eades,S. Parsons, H. Desjardins, K. Kim, Z.-X. Jiang, V. Dhandapani, J. Hildreth, R. Pow-ers, G. Spencer, N. Ramani, M. Kottke, M. Canonico, X.-D. Wang, L. Contreras, D.Theodore, R. Gregory, and S. Venkatesan, Metrology challenges for 45 nm strained-Sidevice technology, IEEE Transactions on Semiconductor Manufacturing 19, pp. 381-390(2006). Times cited: 11

133. S. Zollner, J.P. Liu, P. Zaumseil, H.J. Osten, and A.A. Demkov, Optical properties,elasto-optical effects, and critical-point parameters of biaxially stressed Si1−yCy alloyson Si (001), Semicond. Sci. Technol. 22, (2007) S13-S20. Times cited: 2

134. K. Chang, S. Bolton, M. Rossow, R. Gregory, J. Jiang, D. Jawarani, S. Zollner, D.Denning, and J. Cheek, In-situ surface preparation prior to Ni deposition for Ni sali-cide processes, in Ultra Clean Processing of Semiconductor Surfaces VIII, edited by P.Mertens, M. Meuris, and M. Heyns, Solid State Phenomena 134, 19-22 (Trans TechPublications, Zurich, 2008).

135. G. Karve, T. White, D. Eades, M. Sadaka, G. Spencer, J. Hackenberg, J. Norbert, T.Kropewnicki, S. Zollner, P. Beckage, J. Grant, R. Garcia, Bich-yen Nguyen, N. Cave, M.Hall, J. Cheek, S. Venkatesan, C. Lin, and I. Wu, Dual Substrate Orientation integrationfor high performance (110) PMOS, J. Electrochem. Soc. 602, 1036 (2006). Times cited:1

136. S. Pozder, R. Jones, V. Adams, H.-F. Li, M. Canonico, S. Zollner, S.H. Lee, R.J. Gut-mann, J.-Q. Lu, Exploration of the Scaling Limits of 3D Integration, Mater. Res. Soc.Symp. Proc. 970, 0970-Y02-01 (2007). Times cited: 2

137. S. Zollner, P. Grudowski, G. Karve, T. White, A. Thean, D. Jawarani, S. Bolton, H.Desjardins, M. Chowdhury, K. Chang, M. Jahanbani, R. Noble, L. Lovejoy, M. Rossow, D.Denning, D. Goedeke, S. Filipiak, R. Garcia, M. Raymond, V. Dhandapani, D. Zhang, L.Kang, P. Crabtree, X. Zhu, M.L. Kottke, R. Gregory, P. Fejes, X.-D. Wang, D. Theodore,W.J. Taylor, B.-Y. Nguyen Dual silicide SOI CMOS integration with low-resistance PtSiPMOS contacts, 2007 IEEE International SOI Conference, Indian Wells, CA, 1-4 Oct.2007, p. 75-76.

138. P. Grudowski, V. Dhandapani, S. Zollner, D. Goedeke, K. Loiko, D. Tekleab, V. Adams,G. Spencer, H. Desjardins, L. Prabhu, R. Garcia, M. Foisy, D. Theodore, M. Bauer, D.Weeks, S. Thomas, A. Thean, and B. White, An Embedded Silicon-Carbon S/D StressorCMOS Integration on SOI with enhanced carbon incorporation by laser spike annealing2007 IEEE International SOI Conference, Indian Wells, CA, 1-4 Oct. 2007, p. 17-18.Times cited: 8

139. Xiang-Zheng Bo, Laegu Kang, T. Luo, K. Junker, S. Zollner, G. Spencer, V. Kolagunta,J. Cheek, High performance NMOS transistors of 45nm SOI technology, 2007 IEEEInternational SOI Conference, Indian Wells, CA, 1-4 Oct. 2007, p. 15-16. Times cited: 2

140. S. Zollner, R.B. Gregory, M.L. Kottke, V. Vartanian, X.-D. Wang, D. Theodore, P.L.Fejes, J.R. Conner, M. Raymond, X. Zhu, D. Denning, S. Bolton, K. Chang, R. Noble, M.Jahanbani, M. Rossow, D. Goedeke, S. Filipiak, R. Garcia, D. Jawarani, B. Taylor, B.-Y.Nguyen, P.E. Crabtree, and A. Thean Metrology Of Silicide Contacts For Future CMOS,in 2007 International Conference on Frontiers of Characterization and Metrology, editedby D.G. Seiler, A.C. Diebold, R. McDonald, C.M. Garner, D. Herr, R.P. Khosla, andE.M. Secula, AIP Conf. Proc. 931, 337-346 (2007). Times cited: 1

141. V. Vartanian, D. Triyoso, K. Junker, M. Raymond, M. Canonico, G. Spencer, M. Rossow,S. Zollner, D. Roan, J. Smith, and C. Happ, Future Metrology Challenges in AdvancedCMOS Development, Semiconductor Fabtech 33, 100 (2007).

142. R. B. Gregory, D. H. Triyoso, R. I. Hegde, J. K. Schaeffer, P. L. Fejes, S. Zollner, Z. Yu,X.-D. Wang, Impact of additives on the microstructure of hafnium-based high-k dielectricsin Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies editedby Y. Chabal, A. Esteve, N. Richard, and G. Wilk, (Mater. Res. Soc. Symp. Proc. 996E,Warrendale, PA, 2007), H05-37.

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143. H. Bentmann, A.A. Demkov, R. Gregory, and S. Zollner, Electronic and optical propertiesof PtSi thin films, Phys. Rev. B 78, 205302 (2008). Times cited: 21

144. B. Yang, R. Takalkar, Z. Ren, L. Black, A. Dube, J.W. Weijtmans, J. Li, J. Johnson, J.Faltermeier, A. Madan, Z. Zhu, A. Turansky, G. Xia, A. Chakravarti, R. Pal, K. Chan,A. Reznicek, T. Adam, B. Yang, J.P. de Souza, E. Harley, B. Greene, A. Gehring, M.Cai, D. Aime, S. Sun, H. Meer, J. Holt, D. Theodore, S. Zollner, P. Grudowski, D.Sadana, D.-G. Park, D. Mocuta, D. Schepis, E. Maciejewski, S. Luning, J. Pellerin, E.Leobandung, High-performance nMOSFET with in situ phosphorus-doped embedded Si:C(ISPD eSi:C) source-drain stressor, 2008 IEEE International Electron Devices Meeting,p. 4796611 (2008). Times cited: 30

145. X. Luo, A.A. Demkov, D. Triyoso, P. Fejes, R. Gregory and S. Zollner, Combined experi-mental and theoretical study of thin hafnia films, Phys. Rev. B 78, 245314 (2008). Timescited: 28

146. C.V. Weiss, J. Zhang, M. Spies, L.S. Abdallah, S. Zollner, M.W. Cole, and S.P. Alpay,Bulk-like Dielectric properties from metallo-organic solution deposited SrTiO3 films onPt-coated Si substrates, J. Appl. Phys. 111, 054108 (2012). Times cited: 4

147. S.G. Choi, J. Hu, L.S. Abdallah, M. Limpinsel, Y.N. Zhang, S. Zollner, R.Q. Wu, andM. Law, Pseudodielectric function and critical-point energies of iron pyrite, Phys. Rev.B 86, 115207-01-05 (2012). Times cited: 10

148. C.M. Nelson, M. Spies, L.S. Abdallah, S. Zollner, Y. Xu, and H. Luo, Dielectric functionof LaAlO3 from 0.8 to 6.6 eV between 77 and 700 K, J. Vac. Sci. Technol. A 30, 061404-1-6(2012). Times cited: 13

149. A.B. Posadas, C. Lin, A.A. Demkov and S. Zollner, Band gap engineering in perovskiteoxides: Al-doped SrTiO3, Appl. Phys. Lett. 103, 142906 (2013). Times cited: 2

150. T. Willett-Gies, E. DeLong, and S. Zollner, Vibrational properties of LaAlO3 fromFourier-transform infrared ellipsometry, Thin Solid Films 571, 620-624 (2014).

151. L.S. Abdallah, S. Zollner, C. Lavoie, A. Ozcan, and M. Raymond, Compositional depen-dence of the optical conductivity of Ni1−xPtx alloys (0< x <0.25) determined by spectro-scopic ellipsometry, Thin Solid Films 571, 484-489 (2014). Times cited: 1

152. C.J. Zollner, T. Willett-Gies, S. Zollner, and S. Choi, Infrared to vacuum-ultravioletellipsometry studies of spinel (MgAl2O4), Thin Solid Films 571, 689-694 (2014).

153. L.S. Abdallah, T.M. Tawalbeh, I.V. Vasiliev, S. Zollner, C. Lavoie, A. Ozcan, and M.Raymond, Optical conductivity of Ni1−xPtx alloys (0< x <0.25) from 0.76 to 6.6 eV, AIPAdvances 4, 017102 (2014). Times cited: 1

154. Kristy J. Kormondy, Agham B. Posadas, Alexander Slepko, Ajit Dhamdhere, David J.Smith, Khadijih N. Mitchell, Travis I. Willett-Gies, Stefan Zollner, Luke G. Marshall,Jianshi Zhou, and Alexander A. Demkov, Epitaxy of polar semiconductor Co3O4 (110):Growth, structure, and characterization, J. Appl. Phys. 115, 243708 (2014).

155. M. Choi, A.B. Posadas, C.A. Rodriguez, A. O’Hara, H. Seinige, A.J. Kellock, M.M.Frank, M. Tsoi, S. Zollner, V. Narayanan, and A.A. Demkov, Structural, optical andelectrical properties of strained La-doped SrTiO3 films, J. Appl. Phys. 116, 043705 (2014).Times cited: 1

156. Lina S. Abdallah, Stefan Zollner, Christian Lavoie, Ahmet S. Ozcan, and Mark Ray-mond, Optical conductivity of Ni1−xPtxSi monosilicides (0<x<0.3) from spectroscopicellipsometry, J. Vac. Sci. Technol. B 32, 051210 (2014).

157. Andrew OHara, Timothy N. Nunley, Agham B. Posadas, Stefan Zollner, and AlexanderA. Demkov, Electronic and Optical Properties of NbO2, J. Appl. Phys. 116, 213705 (2014).

158. Kurt D. Fredrickson, Chungwei Lin, Stefan Zollner, and Alexander A. Demkov, Theoret-ical study of negative optical mode splitting in LaAlO3, Phys. Rev. B 93, 134301 (2016).

159. Miri Choi, Chungwei Lin, Matthew Butcher, Cesar Rodriguez, Qian He, Agham B.Posadas, Albina Y. Borisevich, Stefan Zollner, and Alexander A. Demkov, Quantum con-finement in transition metal oxide quantum wells, Appl. Phys. Lett. 106, 192902 (2015).

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160. T.I. Willett-Gies, C.M. Nelson, L.S. Abdallah, and S. Zollner, Two-phonon absorption inLiF and NiO from infrared ellipsometry, J. Vac. Sci. Technol. A 33, 061202 (2015).

161. A. Ghosh, C.M. Nelson, L.S. Abdallah, and S. Zollner, Optical constants and band struc-ture of trigonal NiO, J. Vac. Sci. Technol. A 33, 061203 (2015).

162. R. Hazbun, J. Hart, R. Hickey, A. Ghosh, N. Fernando, S. Zollner, T.N. Adam, andJ. Kolodzey, Silicon epitaxy using tetrasilane at low temperatures in ultra high vacuumchemical vapor deposition, J. Cryst. Growth 444, 21 (2016).

163. J. Hart, R. Hazbun, D. Eldridge, R. Hickey, N. Fernando, T. Adam, S. Zollner, and J.Kolodzey, Tetrasilane and Digermane for the ultra-high vacuum chemical vapor deposi-tion of SiGe alloys, Thin Solid Films 604, 23 (2016).

164. N.S. Fernando, J. Hart, D. Zhang, R. Hickey, R. Hazbun, J. Kolodzey, and S. Zollner,Band structure and optical properties of pseudomorphic Ge1−x−ySixSny on Ge, IEEESummer Topicals Conference on Emerging Technology for Integrated Photonics, 11-13July 2016, Newport Beach, CA.

165. T.N. Nunley, N. Fernando, J.M. Moya, N.S. Arachchige, C.M. Nelson, A.A. Medina, andS. Zollner, Precise Optical Constants of Ge and GeO2 from 0.5 to 6.6 eV, IEEE SummerTopicals Conference on Emerging Technology for Integrated Photonics, 11-13 July 2016,Newport Beach, CA.

166. M.A.A. Taludker, Y. Cui, M. Compton, W. Geerts, L. Scolfaro, and S. Zollner, FTIRellipsometry study on RF sputtered permalloy-oxide thin films, MRS Advances (published6/13/2016).

167. T.N. Nunley, T.I. Willett-Gies, J.A. Cooke, F. Manciu, P. Marsik, C. Bern-hard, and S. Zollner, Optical constants, band gap, and infrared-active phonons of(LaAlO3)0.3(Sr2AlTaO6)0.35 (LSAT) from spectroscopic ellipsometry, J. Vac. Sci. Tech-nol. A 34, 051507 (2016).

168. D. Pal, A. Mathur, A. Singh, S. Dutta, J. Singhal, S. Zollner, and S. Chattopadhyay,Tunable optical properties in atomic layer deposition grown ZnO thin films, J. Vac. Sci.Technol. A (accepted).

169. T.N. Nunley, N.S. Fernando, N. Samarasingha, J.M. Moya, C.M. Nelson, A.A. Medina,and S. Zollner, Optical constants of germanium and thermally grown germanium dioxidefrom 0.5 to 6.6 eV via a multi-sample ellipsometry investigation, J. Vac. Sci. Technol. B34, 061205 (2016).

170. S. Zollner, T.N. Nunley, D.P. Trujillo, L.G. Pineda, and L.S. Abdallah, Temperature-dependent dielectric function of nickel, Appl. Surf. Sci. (published online).

171. D. Pal, J. Singhal, A. Mathur, A. Singh, S. Dutta, S. Zollner, and S. Chattopadhyay,Effect of substrates and thickness on optical properties in atomic layer deposition grownZnO thin films, Appl. Surf. Sci. (accepted).

172. Nalin S. Fernando, T. Nathan Nunley, Ayana Ghosh, Cayla M. Nelson, Jacqueline A.Cooke, Amber A. Medina, Stefan Zollner, Chi Xu, Jose Menendez, and John Kouvetakis,Temperature dependence of the interband critical points of bulk Ge and strained Ge onSi, Appl. Surf. Sci. (accepted 9/7/2016).

Books (edited volumes) and Chapters

1. Silicon-Germanium Carbon Alloys. Growth, Properties and Applications, edited bySokrates T. Pantelides and Stefan Zollner, (Taylor and Francis, New York, 2002), Vol. 15of Optoelectronic Properties of Semiconductors and Superlattices, M.O. Manasreh, serieseditor, 538 pages. Times cited: 29

2. W. Arden et. al., International Technology Roadmap for Semiconductors. 2001 Edition,(Semiconductor Industry Association, 2001).

3. Progress in Semiconductor Materials II: Electronic and Optoelectronic Applications,edited by B.D. Weaver, O. Manasreh, C. Jagadish, and S. Zollner, (Mat. Res. Soc. Pitts-burgh, 2003).

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4. Characterization and Metrology for ULSI Technology, edited by D.G. Seiler, A.C.Diebold, T.J. Shaffner, R. McDonald, S. Zollner, R.P. Khosla, and E.M. Secula, (Ameri-can Institute of Physics, Melville, NY, 2003), AIP Conf. Proc. vol. 683.


6. Characterization and Metrology for ULSI Technology 2005, edited by D.G. Seiler, A.C.Diebold, R. McDonald, C.R. Ayre, R.P. Khosla, S. Zollner, and E.M. Secula, (AmericanInstitute of Physics, Melville, NY, 2005), AIP Conf. Proc. vol. 788.


8. David G. Seiler, Stefan Zollner, Alain C. Diebold, and Paul M. Amirtharaj, OpticalProperties of Semiconductors, in Handbook of Optics, Vol. IV, edited by M. Bass, (OpticalSociety of America, 3rd edition, New York, 2010).

9. S. Zollner, Spectroscopic Ellipsometry for Inline Process Control in the Semiconduc-tor Industry, in Ellipsometry at the Nanoscale edited by M. Losurdo and K. Hingerl,(Springer, Heidelberg, 2013), p. 607-627. Times cited: 1

10. S. Zollner, Manuel Cardona’s contributions to semiconductor technology, in Manuel Car-dona: Memories and Reminiscences edited by K. Ensslin and L. Vina, (Springer, Hei-delberg, 2016).

Patents

1. J. Ramdani, R. Droopad, L. Tisinger, J. Curless, S. Zollner, Semiconductor structurehaving high dielectric constant material, Patent number 507317, certification number165165, issued on October 10, 2002, in Taiwan.

2. Stefan Zollner, Veer Dhandapani, Paul Grudowski, and Greg Spencer, Anneal of epitaxiallayer in a semiconductor device, US patent 7,416,605 issued on 26 August 2008. Timescited: 28

3. Paul A. Grudowski, Veer Dhandapani, Darren V. Goedeke, V.-Y. Thean, and StefanZollner, Method of making a semiconductor device with embedded stressor, US patent7,736,957 issued on 15 July 2010. Times cited: 6

4. Stefan Zollner, Veer Dhandapani, and Paul A. Grudowski, Semiconductor device withstressors and methods thereof, US patent application number 2008 0293192.

5. Stefan Zollner and Bich-Yen Nguyen, Process of forming an electronic device includinga doped semiconductor layer, US patent 7,560,354 issued on 14 July 2009.

6. Stefan Zollner, Method of forming a semiconductor device having a stressed electrode andsilicide regions, US patent application 2009 0227099.

7. Paul Grudowski, Veer Dhandapani, Stefan Zollner, Fabrication of semiconductor devicewith stressor, US patent 7,687,354 issued on 30 March 2010. Times cited: 2

8. Ahmet Ozcan, Christian Lavoie, Bin Yang, and Stefan Zollner, Method for forming self-aligned ultra-thin uniform Ni silicide contacts (in preparation).

9. Byoung Min, Stefan Zollner, Qingqing Liang, Efficient body-contacted field effect tran-sistor with low body resistance, US patent 7,820,530 issued on 26 October 2010. Timescited: 3

10. Z. Zhen, B. Yang, S.M. Rossnagel, A. Kellock, Y. Zhu, A.S. Ozcan, S. Zollner, C. Lavoie,Silicide contact formation, US patent 8,404,589 issued on 26 March 2013.

11. A. Ozcan, M. Cai, and S. Zollner, Method to remove gate spacers after metal-rich silicideformation, (in preparation).

12. E. Maciejewski, D. Slisher, and S. Zollner, eFuse and Method of Fabrication, US patentapplication 8,980,720B2, published on 17 March 2015.

Contributions to conferences (abstract only)

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1. S. Zollner, Sudha Gopalan, and M. Cardona, Deformationspotentiale und Streuraten furIntervalleystreuung, Verhandl. DPG (VI) 24, HL 8.4, (1989).

2. Sudha Gopalan, S. Zollner, and M. Cardona, Intervalley Deformation Potentials andScattering Rates in Zincblende Semiconductors, Bull. Am. Phys. Soc. 34, 832 (1989).

3. S. Zollner, U. Schmid, C. H. Grein, N. E. Christensen, M. Cardona, and L. Ley, EmpiricalPseudopotential and LMTO calculations of spin-splittings in AlAs, AlSb, and strainedGaAs, Bull. Am. Phys. Soc. 35, 828 (1990).

4. C. H. Grein, S. Zollner, and M. Cardona, Theory of second order Raman scattering insemiconductors under uniaxial stress, Bull. Am. Phys. Soc. 35, 234-235 (1990).

5. M. K. Kelly, S. Zollner, and M. Cardona, Semiconductor surface optical properties fromspectroscopic ellipsometry, Bull. Am. Phys. Soc. 36, 864 (1991).

6. M. K. Kelly, S. Zollner, and M. Cardona, Surface differential spectroscopy with in situellipsometry, Il Vuoto, Scienza e Tecnologia, (1992).

7. P. M. Mooney, S. Zollner, J. O. Chu, and B. S. Meyerson, Properties of SiGe layersgrown by UHV-CVD, Bull. Am. Phys. Soc. 37, 716 (1992).

8. S. Zollner, R.T. Collins, K. Eberl, S.S. Iyer, P.J. Wang, J.O. Chu, and B.S. Meyerson,Characterization of SiGeC alloys and MQWs using x-ray scattering and photolumines-cence, Bull. Am. Phys. Soc. 37, 552 (1992).

9. J. Faul, G. Neuhold, L. Ley, J. Fraxedas, S. Zollner, J. D. Riley, and R. C. G. Leckey,Determination of Conduction Band States in Five III-V-Semiconductors, Verhandl. DPG(VI) 28, 1446, (1993).

10. S. Zollner, C. M. Herzinger, J. A. Woollam, S. S. Iyer, A. P. Powell, and K. Eberl, Piezo-optical response of Si1−yCy alloys grown pseudomorphically on Si (100), 42nd MidwestSolid-State Conference, Kansas City, Mo, October 14 to 15, 1994.

11. K. G. Jensen, J. M. Haisch, S. Zollner, and K. D. Myers, Measurements of femtosecondlaser light using a commercial wavemeter, 42nd Midwest Solid-State Conference, KansasCity, Mo, October 14 to 15, 1994.

12. K. G. Jensen, J. M. Haisch, S. Zollner, and K. D. Myers, Why autocorrelators for ultrafastlasers will soon be obsolete, Bull. Am. Phys. Soc. 40, 140 (1995).

13. S. Zollner, C. M. Herzinger, J. A. Woollam, S. S. Iyer, A. P. Powell, and K. Eberl, Piezo-optical response of Si1−yCy alloys grown pseudomorphically on Si (100), Bull. Am. Phys.Soc. 40, 277 (1995).

14. K. E. Junge, A. A. Affolder, R. Lange, and S. Zollner, On the origin of extra peaks in thedielectric function of Si1−x−yGexCy alloys grown pseudomorphically on Si (001), 43rdMidwest Solid-State Conference, St. Louis, Mo., October 14, 1995.

15. K. Junge, R. Lange, and S. Zollner, Spectroscopic ellipsometry and band structure ofSi1−x−yGexCy alloys, Bull. Am. Phys. Soc. 41, 420 (1996).

16. K. D. Myers, S. Zollner, R. Lange, and K. G. Jensen, Femtosecond time-resolved reflec-tivity of Ge, APS march meeting, St. Louis, MO, 1996 (post-deadline poster).

17. R. Lange, K. E. Junge, A. A. Affolder, and S. Zollner, Spectroscopic ellipsometry and bandstructure of Si1−x−yGexCy alloys, MRS Spring Meeting, April 8-12, 1996, San Francisco,CA, MRS Spring Meeting Abstracts, 116 (1996).

18. S. Zollner, K. D. Myers, K. G. Jensen, J. M. Dolan, D. W. Bailey, C. J. Stanton, Femtosec-ond hole dynamics in Ge studied by pump-probe reflectivity, 44th Midwest Solid-StateConference, Lincoln, NE, October 18-19, 1996.

19. K. E. Junge, R. Lange, J. M. Dolan, S. Zollner, M. Dashiell, B. A. Orner, and J. Kolodzey,Dielectric response of thick low dislocation-density Ge epilayers grown on (001) Si, 44thMidwest Solid-State Conference, Lincoln, NE, October 18-19, 1996.

20. R. Lange, K. E. Junge, S. Zollner, S. S. Iyer, A. P. Powell, and K. Eberl, Effects ofbiaxial stress on the band structure of Si1−x−yGexCy/Si(001), 44th Midwest Solid-StateConference, Lincoln, NE, October 18-19, 1996.

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21. S.-J. Lee, R. Lange, S. Zollner, P. Canfield, B. Harmon, and D. W. Lynch, The magneto-optical properties of rare earth-transition metal compounds, 44th Midwest Solid-StateConference, Lincoln, NE, October 18-19, 1996.

22. S. Zollner, Interband hole scattering in Ge studied by femtosecond pump-probe reflectivity,APS March Meeting 1997 (invited talk).

23. R. Lange, S.-J. Lee, S. Hong, P.C. Canfield, S. Zollner, D.W. Lynch, and B.N. Harmon,Magneto-optical response and band structure of XPt3 (X=Mn, Co), APS March meeting,Kansas, City, MO, March 1997.

24. K.E. Junge, R. Lange, J.M. Dolan, S. Zollner, M. Dashiell, B.A. Orner, and J. Kolodzey,Dielectric response of low dislocation-density Ge and Ge-rich Si1−x−yGexCy alloys grownon Si (001), APS March meeting, Kansas, City, MO, March 1997.

25. S.-J. Lee, R. Lange, S. Zollner, P.C. Canfield, B.N. Harmon, and D.W. Lynch, Theelectronic structure and magneto-optical properties of heavy rare earth-Fe2 compounds,APS March meeting, Kansas, City, MO, March 1997.

26. S. Zollner, Spectroscopic Ellipsometry of SiGeC: Band structure, strain, composition,transport, and dislocations, SiGeC Workshop, University of Texas, Austin, TX, April 25,1997 (invited talk).

27. R. Liu, D. O’Meara, N. Cave, S. Zollner, and M. Liaw, Raman characterization of stressesand Ge composition in Si/Si1−xGex SEMFET structures, Bull. Am. Phys. Soc. 43, 148(1998).

28. S. Zollner, R. Liu, J. Christiansen, W. Chen, K. Monarch, T.-C. Lee, R. Singh, J. Yater,W. Paulson, and C. Feng, Raman and ellipsometry studies of phosphorus-doped poly-Sifilms, Bull. Am. Phys. Soc. 43, 149 (1998).

29. S. Zollner, R. Liu, E. Duda, D. Reed, T. Remmel, and J. Christiansen, Optical Propertiesof bulk and epi SiC for power devices, Bull. Am. Phys. Soc. 43, 961 (1998).

30. S. Zollner, R. Liu, E. Duda, D. Reed, and J. Christiansen, Optical characterization ofbulk and thin-film SiC, MRS Spring Meeting, April 13-17, 1998, San Francisco, CA, MRSSpring Meeting Abstracts, 111 (1998).

31. S. Zollner, J.G. Chen, J.N. Hilfiker, T.E. Tiwald, and J.A. Woollam, Optical propertiesof bulk 4H and 6H and epitaxial 3C SiC on Si, J. Electron. Mater. 27 (7), abstract page37 (1998).

32. T.E. Tiwald, S. Zollner, J.A. Woollam, and J.E. Christiansen, Measurement of carrierconcentration and lattice absorption in bulk and epitaxial silicon carbide using infraredellipsometry, American Vacuum Society 45th International Symposium, November 2,1998.

33. T.E. Tiwald, S. Zollner, J.A. Woollam, and J. Christiansen, Infrared ellipsometric inves-tigation of phonon and effective mass anisotropies of silicon carbide, Bull. Am. Phys.Soc. 44, 1337 (1999).

34. S. Zollner, T.C. Lee, K. Noehring, W.M. Huang, D. Monk, T. Wetteroth, S.R. Wilson,and J.N. Hilfiker, Thin-film metrology of semiconductor-on-insulator films, Bull. Am.Phys. Soc. 44, 1338 (1999).

35. S. Zollner, E. Duda, T. Wetteroth, C. Weitzel, S.Q. Hong, M. Liaw, J. Gutt, S.R. Wilson,R. Vaudo, J.M. Redwing, J.N. Hilfiker, T.E. Tiwald, and J.A. Woollam, Spectroscopicellipsometry of wide band-gap semiconductors, Bull. Am. Phys. Soc. 44, 1365 (1999).

36. S. Zollner, T.-C. Lee, K. Noehring, W. M. Huang, D. Monk, T. Wetteroth, S. R. Wilson,J. N. Hilfiker, Thin-film metrology of SOI and SiCOI, MRS Spring Meeting, April 5-9,1999, San Francisco, CA, MRS Spring Meeting Abstracts, 311-312 (1999).

37. S. Zollner, Use of streak camera for picosecond emission microscopy and applications forfailure analysis of integrated circuits, Motorola Technical Development 37, 24 (1999).

38. R. Liu and S. Zollner, Raman spectroscopy of SrBi2Ta2O9, Int. Conf. on Solid StateSpectroscopy, September 5-7, 1999, Schwabisch Gmund, Germany.

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39. Stefan Zollner, Jill Hildreth, Ran Liu, Peter Zaumseil, Marita Weidner, and BerndTillack, Ellipsometric thickness measurements of strained Si1−x−yGexCy alloys on Si(001), Bull. Am. Phys. Soc. 45, 587 (2000).

40. Stefan Zollner, A.A. Demkov, P.L. Fejes, R.B. Gregory, R. Liu, J. Curless, Z. Yu, J. Ram-dani, R. Droopad, P. Alluri, T.E. Tiwald, J.N. Hilfiker, J.A. Woollam, Optical propertiesof bulk SrTiO3 and thin-films on Si and Pt, Bull. Am. Phys. Soc. 45, 434 (2000).

41. J.N. Hilfiker, T.E. Tiwald, C.L. Bungay, T. Wagner, and S. Zollner, Materials characteri-zation in the vacuum ultraviolet with variable angle spectroscopic ellipsometry, WorkshopEllipsometrie, February 22-23, 2000, Stuttgart, Germany.

42. T. Prokofyeva, M. Seon, J. Vanbuskirk, Mark Holtz, S.A. Nikishin, N.N. Faleev, H.Temkin, Stefan Zollner, and Atul Konkar, Vibrational Properties of AlN grown on Si(111), Gordon Conference on Point and Line Defects in Semiconductors, Colby-SawyerCollege, New London, NH, July 9-14, 2000.

43. T. Wagner, J. Hilfiker, T. Tiwald, C. Bungay, and S. Zollner, Materials Characterizationin the Vacuum Ultraviolet with variable angle spectroscopic ellipsometry, INF Meeting,National Conference on the Physics of Matter, Genova, Italy, June 12-16, 2000.

44. S. Zollner, A. Konkar, M. Kottke, S. Lu, and W. Chen, Wireless semiconductor tech-nology: Related critical characterization and metrology, 2000 International Conferenceon Characterization and Metrology for ULSI Technology, Gaithersburg, MD, 26-29 June2000 (invited talk).

45. S. Zollner, Inline optical metrology of semiconductor heterostructures in microelectronicsmanufacturing, Workshop on Optical Characterization of Interfaces: Status and Oppor-tunities, Park City, UT, 15-18 October 2000 (invited talk).

46. A. Konkar, Q. Xie, S. Zollner, R. Liu, R.B. Gregory, and S. Madhukar, Characterizationof Si nanoparticles for memory applications, MRS Fall Meeting, 26-30 November 2000,Boston, MA, MRS Fall Meeting Abstracts, 113 (2000).

47. S. Zollner, Optical, vibrational, and structural properties of high-ε transition metal oxides,(invited talk), Bull. Am. Phys. Soc. 46, 463 (2001).

48. M. Holtz, T. Prokofyeva, M. Seon, J. Vanbuskirk, S.A. Nikishin, N.N. Faleev, H. Temkin,and S. Zollner, Vibrational Raman and infrared properties of AlN grown on silicon, Bull.Am. Phys. Soc. 46, 1123 (2001).

49. S. Zollner, A. Konkar, R. Liu, H. Yapa, P.F. Dryer, V.A. Neeley, Q. Xie, G.F. Grom, Q.Zhu, R. Krishnan, P.M. Fauchet, and L. Tsybeskov, Optical and structural characteriza-tion of nanocrystalline Si/SiO2 superlattices, Bull. Am. Phys. Soc. 46, 416 (2001).

50. R. Liu, S. Zollner, P. Fejes, R. Gregory, A. Konkar, S. Lu, Z. Yu, J. Curless, R. Droopad,J. Finder, and K. Eisenbeiser, Structural and physical properties of epitaxial SrTiO3 filmson Si, Bull. Am. Phys. Soc. 46, 377 (2001).

51. V. Kuznetsov, J. Ruan, G. Grom, R. Krishnan, L. Tsybeskov, B. White, and S. Zollner,A prototype of a memory device utilizing resonant tunneling in nc-Si/SiO2 superlattices,Bull. Am. Phys. Soc. 46, 529 (2001).

52. S. Zollner and R. Liu, Vibrational and band-gap engineering of transition metal oxides forhigh-k gate applications, 15th International Vacuum Congress and 48th AVS InternationalSymposium, San Francisco, CA, 28 October to 2 November 2001 (invited talk), p. 74.

53. C.S. Cook, N.V. Edwards, S. Zollner, R.B. Gregory, E. Duda, D. Werho, and H.G.Tompkins, Stoichiometry of silicon nitride films: A comparison of UV/VIS spectrometrywith spectroscopic ellipsometry and Rutherford backscattering spectroscopy, APS FourCorners Section Meeting, November 2nd, 2001, Las Cruces, NM.

54. C.S. Cook, N.V. Edwards, S. Zollner, R.B. Gregory, E. Duda, D. Werho, and H.G.Tompkins, Stoichiometry of silicon nitride films: A comparison of UV/VIS spectrometrywith spectroscopic ellipsometry and Rutherford backscattering spectroscopy, MRS FallMeeting 2001 (accepted).

55. S. Zollner, N.V. Edwards, E. Duda, J. Tolle, J. Taraci, M.R. McCartney, J. Menendez,G. Wolf, D.J. Smith, and J. Kouvetakis, Optical, vibrational, and structural properties ofGe-Sn alloys on Si, Bull. Am. Phys. Soc. 47, 59 (2002).

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56. N.V. Edwards, J. Vella, R. Liu, Q. Xie, S. Zollner, I. Adhihetty, J. Vires, K.H. Junker,Correlation of optical and mechanical properties of organo-silicate glasses, Bull. Am.Phys. Soc. 47, 242 (2002).

57. C.S. Cook, S. Zollner, N.V. Edwards, R.B. Gregory, R. Liu, and H.G. Tompkins, Sto-ichiometry of silicon nitride films: A comparison of spectroscopic ellipsometry withRutherford backscattering spectroscopy, Bull. Am. Phys. Soc. 47, 242 (2002).

58. R. Liu and S. Zollner, Application of UV-Raman spectroscopy to microelectronic materialsand devices, Bull. Am. Phys. Soc. 47, 243 (2002).

59. R. Liu, N.V. Edwards, S. Zollner, J. Kulik, R. Gregory, X.D. Wang, S.F. Lu, J. Scha-effer, D. Triyoso, and B.Y. Nguyen, Characterization of CVD and ALD HfO2 films asalternative gate dielectrics, Bull. Am. Phys. Soc. 47, 894 (2002).

60. S. Zollner, N.V. Edwards, J.N. Hilfiker, T.E. Tiwald, and C.M. Herzinger, Linear opti-cal response functions of semiconductors and insulators determined using spectroscopicellipsometry, Bull. Am. Phys. Soc. 47, 1126 (2002).

61. R. Liu, N.V. Edwards, S. Zollner, J. Kulik, P. Fejes, R. Gregory, X.D. Wang, D. Werho,S.F. Lu, J. Schaeffer, D. Triyoso, and B.Y. Nguyen, Characterization of HfO2 films forhigh-k gate application, Mat. Res. Soc. Spring meeting, San Francisco, April 1-5, 2002,MRS 2002 Spring Meeting Abstracts, page 57.

62. Bich-Yen Nguyen, Vidya Kaushik, Jamie Schaeffer, Melissa Zavala, Kim Reid, ChrisHobbs, LuRea Dip, Dina Triyoso, Darrell Roan, Renee Nieh, Cathy Wang, Hongwei Zhou,Michael Ramon, Bruce Hradsky, Jack Jiang, Ran Liu, Stefan Zollner, Lata Prabhu, JoeKulik, Erika Duda, Ginger Edwards, Rich Gregory, Rama Hegde, James Conner, LauraContreras, Jim Christiansen, Jeff Finder, Kurt Eisenbeiser, Jimmy Yu, Ravi Droopard,Jeff Baker, Steve Voight, Laura Siragusa, Bruce White, Philip J. Tobin, Bob Jones, PeterGill, Joe Mogab, Karen Guo, Progress and Integration Challenges of the Metal Oxidedevelopment for CMOS Gate Dielectric application, The 8th International Conferenceon Electronic Materials (ICEM2000), June 10-14, 2002, Xian, China, (invited talk).

63. J. Schaeffer, N.V. Edwards, R. Liu, D. Roan, B. Hradsky, R. Gregory, J. Kulik, E. Duda,L. Contreras, J. Christiansen, S. Zollner, P. Tobin, B.-Y. Nguyen, R. Nieh, M. Ramon,R. Rao, R. Hegde, and R. Rai, HfO2 gate dielectrics deposited via tetrakis diethylamidohafnium, First International Symposium on High Dielectric Constant Materials: Mate-rials Science, Processing, Manufacturing and Reliability Issues, 202nd Meeting of theElectrochemical Society, Salt Lake City, UT, October 20-24, 2002.

64. S. Zollner, J. Taraci, J. Tolle, M. Bauer, E. Duda, M.R. McCartney, J. Menendez, G. Wolf,D.J. Smith, and J. Kouvetakis, Optical properties and band structure of Ge-Sn alloys onSi grown by UHV-CVD, 26th International Conference on the Physics of Semiconductors,Edinburgh, Scotland, UK, 29 July-2 August 2002.

65. S. Zollner, J. Kulik, G. Tam, R. Liu, P. Fejes, N.V. Edwards, R.B. Gregory, D. Werho, S.Lu, J. Ramdani, L. Tisinger, Z. Yu, A. Demkov, D. Jordan, R. Droopad, J. Curless, K.Eisenbeiser, J.L. Edwards, H. Li, K. Moore, W.J. Ooms, A. Talin, and J. Finder, Physical,optical, and vibrational properties of SrTiO3 films on Si for high-k gate applications, 26thInternational Conference on the Physics of Semiconductors, Edinburgh, Scotland, UK,29 July-2 August 2002.

66. N.V. Edwards, J. Wasson, S. Zollner, J. Kulik, Q. Xie, X.-D. Wang, K. Reid, D. Roan,C.M. Herzinger, and T.E. Tiwald, VUV spectroscopic ellipsometry studies of key sub-strate materials for 157 nm lithography, 3rd International Symposium on 157 nm lithog-raphy, Antwerp, Belgium, 3-6 September 2002.

67. C.S. Cook, M.R. Bauer, J. Taraci, J. Tolle, C. Bungay, J. Menendez, S. Zollner, and J.Kouvetakis, Tunable Band Gaps in Ge-Sn alloys grown on Silicon, Bull. Am. Phys. Soc.48, 844 (2003).

68. S. Zollner, C.S. Cook, Q. Xie, M. Erickson, X.-D. Wang, E. Duda, M. Canonico, R. Liu,T. White, B.-Y. Nguyen, Spectroscopic ellipsometry on strained Si channel structures,Bull. Am. Phys. Soc. 48, 1293 (2003).

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69. S. Zollner, Rewards for Performance, American Physical Society March Meeting, 2March 2003, Austin, TX (invited tutorial).

70. Qianghua Xie, Ran Liu, Xiang-Dong Wang, Michael Canonico, Erika Duda, Jim Chris-tiansen, Stefan Zollner, Shawn Thomas, Ted White, Alex Barr, Bich-Yen Ngyuyen, Ma-terial Characterization for strained Si CMOS, Mat. Res. Soc. Spring meeting, San Fran-cisco, April 21-25, 2003, MRS 2003 Spring Meeting Abstracts, page 57.

71. J. Kulik, R. Liu, N.V. Edwards, S. Zollner, R. Gregory, X.D. Wang, D. Werho, and D.Triyoso, Characterization of HfO2 films for high-k gate application, 2003 TMS ElectronicMaterials Conference, 26 June 2003, Salt Lake City, UT.

72. Stefan Zollner, Candi S. Cook, Alex A. Volinsky, Mariam Sadaka, Q. Xie, X.-D. Wang, M.Canonico, R. Liu, T. White, and B.-Y. Nguyen, Piezo-optical response of high-mobilitystrained Si CMOS layers, 2003 Ellipsometry Conference, Vienna, Austria.

73. Candi S. Cook, Terry Daly, Ran Liu, Michael Canonico, Q. Xie, R.B Gregory, and Ste-fan Zollner, Spectroscopic Ellipsometry for in-line monitoring of silicon nitrides, 2003Ellipsometry Conference, Vienna, Austria.

74. Candi S. Cook, Stefan Zollner, Matthew R. Bauer, Pavan Aella, John Kouvetakis, JoseMenendez, Optical constants and interband transitions of Ge1−xSnx alloys (x <0.2) grownon Si by UHV-CVD, 2003 Ellipsometry Conference, Vienna, Austria.

75. Stefan Zollner, Ran Liu, Qianghua Xie, Michael Canonico, Shifeng Lu, Mike Kot-tke, Xiang-Dong Wang, Alex Volinsky, Mariam Sadaka, Ted White, Alex Barr, ShawnThomas, Bich-Yen Nguyen, Candi Cook, Characterization techniques for strained SiCMOS, Int. Symp. Compound Semiconductors, San Diego, CA, August 2003 (invitedtalk).

76. S. Zollner, R. Liu, M. Canonico, M. Kottke, Q. Xie, S. Lu, M. Sadaka, T. White, A. Barr,B.-Y. Nguyen, S. Thomas, C.S. Cook, A. Volinsky, Photon, electron, and ion spectro-scopies applied to thin strained Si films, AVS 50th International Symposium, Baltimore,MD, 2-7 November 2003 (invited talk).

77. C.S. Cook, S. Zollner, M. Bauer, J. Kouvetakis, J. Menendez, J. Tolle, and C. Bun-gay, Electronic band structure of Ge1−xSnx alloys grown on Si, AVS 50th InternationalSymposium, Baltimore, MD, 2-7 November 2003.

78. S. Zollner, Rewards for Performance, AVS Job Information Forum, AVS 50th Interna-tional Symposium, Baltimore, MD, 2-7 November 2003 (invited talk).

79. S. Zollner, R. Gregory, N. Medendorp, M. Passlack, and D. Braddock, Optical and electri-cal properties of amorphous GdxGa0.4−xO0.6 films in GdxGa0.4−xO0.6/Ga2O3 gate dielectricstacks on GaAs, 34th IEEE Semiconductor Interface Specialists Conference, Washington,DC, Dec. 4-6, 2003.

80. C.S. Cook, S. Zollner, P. Aella, A. Chizmeshya, J. Menendez, and J. Kouvetakis, Eval-uation of the Electronic Band Structure of a New Semiconductor Ternary using Ge, Si,and Sn, APS Four Corners Section Meeting, Tempe, AZ, 24 Oct. 2003.

81. S. Zollner, R. Liu, R.B. Gregory, N.V. Edwards, K. Junker, and T.E. Tiwald, Birefrin-gence and VIS/VUV optical absorption of graphite-like amorphous carbon, Bull. Am.Phys. Soc. 49, 599 (2004).

82. C.S. Cook, S. Zollner, J. Menendez, A.V.G. Chizmeshya, P. Aella, J. Tolle, and J. Kouve-takis, Evaluation of the electronic band structure of a new semiconductor material usingGe, Si, and Sn, Bull. Am. Phys. Soc. 49, 67 (2004).

83. S. Zollner, W. Qin, R.B. Gregory, N.V. Edwards, K. Junker, and T.E. Tiwald, Opti-cal properties (IR to VUV) and birefringence of graphite-like amorphous carbon, AVSmeeting, Los Angeles, 2004.

84. M. Sadaka, A. V-Y. Thean, A. Barr, T. White, V. Vartanian, B-Y. Nguyen, M. Zavala,D. Eades, S. Zollner, Q. Xie, X-D. Wang, M. Kottke, R. Liu, Integration Challenges for45nm Strained Si Devices, AVS meeting, Los Angeles, 2004 (invited talk).

85. M. Sadaka, A. Thean, A. Barr, T. White, V. Vartanian, M. Zavala, B.-Y. Nguyen, Q.Xie, R. Liu, X.-D. Wang, M. Kottke, and S. Zollner, Enhancement of SiGe relaxation for

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fabrication of SGOI substrates using condensation, 206th Meeting of the ElectrochemicalSociety, Oct. 3-8, 2004, Honolulu, HI.

86. S. Zollner, Y. Liang, D. Theodore, Z. Yu, D. Triyoso, J. Curless, and C. Tracy, Opticalproperties and metrology of the high-k/Si interface, Bull. Am. Phys. Soc. 50, 1246 (2005).

87. B. Nguyen, A. Thean, D. Zhang, T. White, M. Sadaka, D. Triyoso, J. Schaeffer, B.Goolsby, and L. Mathew, New materials, processes and device structures for 65nm CMOStechnology node and beyond, 207th Meeting of the Electrochemical Society, May 15-20,2005.

88. V. Vartanian, V.Y. Thean, Q. Xie, X.D. Wang, M. Canonico, S. Parsons, D. Eades, J.Vella, T. Kriske, B. Lu, L. McCormick, B.Y. Nguyen, L. Contreras, D. Theodore, M.Sadaka, K. Kim, J. Mogab, S. Zollner, T. White, Z.X. Jiang, L. Prabhu, M. Zavala,M. Kottke, R. Gregory Metrology Challenges for 45nm Strained-Si Devices, in 2005International Conference on Metrology and Characterization for ULSI Technology, editedby D.G. Seiler et al. (invited talk).

89. D. Triyoso, D. Roan, S. Zollner, Z.-X. Jiang, P. Tobin, R. Hegde, B. White, M. Raymond,M. Ramon, R. Gregory, R. Rai, and X.-D. Wang, Physical and Electrical Characteristicsof ALD HfxTiyO, 5th International Conference on Atomic Layer Deposition 2005, 8-10August 2005, San Jose, CA.

90. B.-Y. Nguyen, V. Vartanian, A. Thean, D. Zhang, M. Sadaka, A. Vandooren, T.R. White,L. Mathew, V. Dhandapani, B. Goolsby, M. Zavala, L. Prabhu, D. Triyoso, J. Schaeffer,S. Zollner, M. Kottke, M. Canonico, B. Xie, X.-D. Wang, L. McCormick, J. Hackenberg,J. Hildreth, R. Villapando, A. Barr, V. Kaushik, D. Pham, M. Mendicino, M. Orlowski,S. Venkatesan, and J. Mogab, Processes, Materials, and Device Architectures for 65nmTechnologies and Beyond, SEMICON Europa 2005, Munich, Germany, 14 April 2005(keynote talk).

91. D. Triyoso, D. Roan, M. Ramon, R. Gregory, P. Tobin, R. Hegde, B. White, S. Zollner,X.-D. Wang, Engineering the interface properties of HfO2 by Ti addition, 36th IEEEInterface Specialists Conference, December 2005.

92. Z. Song, R.D. Geil, B. Rogers, N.D. Theodore, M.L. Kottke, and S. Zollner, Initial StageDeposition of ZrO2 from Zirconium t-Butoxide during High-Vacuum Chemical VaporDeposition, AVS International Conference on Microelectronics and Interfaces, San Jose,CA, March 6-8, 2005.

93. S. Zollner, S. Bolton, D. Jawarani, X. Zhu, M. Canonico, R.B. Gregory, Q. Xie, P.L.Fejes, M. Kottke, J. Alvis, R. Noble, C. Parker, M. Jahanbani, B.-Y. Nguyen, J. Cheek,Properties of nickel silicide formed by rapid thermal processing of thin Ni layers onSi (001), Gordon Conference on Chemistry of Electronic Materials, July 17-22, 2005,Connecticut College, New London, CT.

94. T.E. Tiwald, J.N. Hilfiker, and S. Zollner, Dielectric function of bulk 4H SiC from 0.037to 9.3 eV (0.138 to 33 µm) measured with generalized spectroscopic ellipsometry, 27thInternational Conference on the Physics of Semiconductors, Flagstaff, AZ.

95. S. Zollner, S. Bolton, D. Jawarani, X. Zhu, R.B. Gregory, J. Alvis, R. Noble, M. Ja-hanbani, B.-Y. Nguyen, Properties of nickel silicide formed by rapid thermal processingof thin Ni layers on Si (001), Texas Section Meeting of the American Physical Society,Houston, TX, 21 October 2005.

96. M. Niranjan, S. Zollner, L. Kleinman, and A. Demkov, Electronic structure and Schottkybarrier height of Si/PtSi interface, Texas Section Meeting of the American PhysicalSociety, Houston, TX, 21 October 2005.

97. M.K. Niranjan, S. Zollner, L. Kleinman, and A.A. Demkov, Schottky barrier height atSi(001)/PtSi(010) and Si(111)/ErSi2(001) interface, Bull. Am. Phys. Soc. (2006).

98. S. Bolton, D. Jawarani, S. Zollner, M. Rossow, K. Chang, R. Noble, M. Jahanbani, J.Alvis, X. Zhu, V. Vartanian, and C.M. Chuang, Nickel silicide for 65nm CMOS: Preclean,thermal processing, and metrology, 2006 Materials for Advanced Metallization conference,March 6-8, Grenoble, France, p. 165-166.

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99. S. Zollner, S. Bolton, M. Rossow, K. Chang, R. Noble, M. Jahanbani, D. Jawarani,X. Zhu, V. Vartanian, M. Raymond, M. Kottke, R.B. Gregory, and J. Alvis, Thin-filmmetrology for nickel silicide process control, International Conference on Microelectronicsand Interfaces, Austin, TX, March 6-8, 2006.

100. V. Vartanian, A. Thean, T. White, B.-Y. Nguyen, S. Zollner, D. Theodore, H. Desjardins,L. Prabhu, R. Garcia, G. Spencer, V. Dhandapani, S. Murphy, J. Conner, P. Fejes, R. Rai,C. Parker, J. Hildreth, R. Noble, M. Jahanbani, J. Mogab, and S. Venkatesan, Compar-ison of PMOS performance via global and local condensation, International Conferenceon Microelectronics and Interfaces, Austin, TX, March 6-8, 2006.

101. T. White, V. Vartanian, B.-Y. Nguyen, D. Zhang, A. Thean, P. Grudowski, S. Zollner, D.Theodore, B. Goolsby, H. Desjardins, L. Prabhu, R. Garcia, J. Hackenberg, V. Dhanda-pani, M. Canonico, V. Adams, S. Murphy, R. Rai, J. Conner, P. Montgomery, C. Parker,J. Hildreth, R. Noble, M. Jahanbani, D. Eades, J. Cheek, B. White, J. Mogab, and S.Venkatesan, Uniaxial and biaxial strain for CMOS performance enhancement, Interna-tional Conference on Microelectronics and Interfaces, Austin, TX, March 6-8, 2006.

102. M.K. Niranjan, S. Zollner, L. Kleinman, and A.A. Demkov, Schottky barrier height atSi(001)/PtSi(010) and Si(111)/ErSi2(001) interface, International Conference on Micro-electronics and Interfaces, Austin, TX, March 6-8, 2006.

103. K. Chang, S. Bolton, M. Rossow, R. Gregory, J. Jiang, D. Jawarani, S. Zollner, and J.Cheek, Implementing an in situ surface preparation prior to Ni deposition for Ni salicideprocesses, Eigth International Symposium on Ultra Clean Processing of SemiconductorSurfaces, Antwerp, Belgium, 18-20 September, 2006.

104. K. Chang, S. Zollner, D. Jawarani, S. Bolton, R. Noble, M. Jahanbani, M. Raymond, D.Denning, M. Rossow, R. Gregory, J. Alvis, D. Eades, G. Karve, and J. Cheek, Evolutionof near-noble metals on Si after thermal annealing observed with x-ray metrology, SecondWorkshop on Contacting Materials for Advanced Semiconductor Devices, 22 September2006, Gent, Belgium.

105. G. Karve, T. White, D. Eades, M. Sadaka, G. Spencer, J. Hackenberg, J. Norbert, T.Kropewnicki, S. Zollner, P. Beckage, J. Grant, R. Garcia, Bich-yen Nguyen, N. Cave, M.Hall, J. Cheek, S. Venkatesan, C. Lin, and I. Wu, Dual Substrate Orientation integrationfor high performance (110) PMOS, 210th Meeting of the Electrochemical Society, 02November 2006, Cancun, MX.

106. S. Pozder, R. Jones, J.-Q. Lu, M. Canonico, S. Zollner, V. Adams, and S. Rauf, Explo-ration of the Scaling Limits of 3D Integration (invited), Mat. Res. Soc. 2006 Fall Meeting,Boston, MA.

107. T. White, V. Vartanian, B.-Y. Nguyen, D. Zhang, A. Thean, P. Grudowski, S. Zollner, D.Theodore, B. Goolsby, H. Desjardins, L. Prabhu, R. Garcia, D. Tekleab, J. Hackenberg,V. Dhandapani, M. Canonico, V. Adams, S. Murphy, R. Rai, J. Conner, P. Montgomery,C. Parker, J. Hildreth, R. Noble, M. Jahanbani, D. Eades, J. Cheek, B. White, J. Mogab,and S. Venkatesan Strain Engineering for Performance Scaling (invited), Semicon West,San Francisco, CA, 19 July 2006.

108. S. Zollner, D. Jawarani, S. Bolton, K. Chang, R. Noble, M. Jahanbani, and M. Rossow,Evolution of Ni on Si after thermal annealing observed with XRR, Fall 2006 Meeting ofthe Texas Section of the American Physical Society, Arlington, TX, 06 October 2006.

109. S. Zollner, Silicide nanowires for CMOS contacts (invited), APS 2007 March meeting,Denver, CO, 6 March 2007.

110. D. Denning, S. Zollner, S. Bolton, M. Rossow, M. Jahanbani, K. Chang, D. Goedeke, P.Grudowski, R. Noble, D. Jawarani, R. Gregory, M. Kottke, Platinum Silicide Contactsfor PMOS Transistors, Materials for Advanced Metallization 2007, Bruges, Belgium,March 4-7, 2007.

111. V. Vartanian, K. Junker, J. Smith, D. Triyoso, M. Raymond, S. Zollner, D. Roan, J.Hildreth, V. Dhandapani, and R. Powers, X-Ray Metrology for 45nm and Beyond, 2007International Conference on Frontiers of Characterization and Metrology Gaithersburgh,MD, March 2007.

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112. H. Bentmann, A.A. Demkov, S. Zollner, and R. Gregory, Electrical and optical propertiesof PtSi thin films, Bull. Am. Phys. Soc. (2008).

113. S. Zollner, P. Grudowski, V. Dhandapani, G. Spencer, and A. Thean, Thermal stabilityand laser annealing of Si1−yCc alloys, Bull. Am. Phys. Soc. (2008).

114. S. Zollner, P. Grudowski, V. Dhandapani, S. Bo, D. Zhang, J. Schaeffer, A. Thean, T.White, B.-Y. Nguyen, Nanoscale materials and structures for CMOS devices, Third An-nual Arizona Nanotechnology Cluster Symposium, Scottsdale, AZ 10 April 2008 (invited).

115. S. Zollner, P. Grudowski, V. Dhandapani, G. Spencer, A. Thean, Dynamic reconfigurationof dopants in Si1−yCy alloys during laser annealing, 29th International Conference on thePhysics of Semiconductors, Rio de Janeiro, Brazil, 31 July 2008.

116. R.I. Hegde, D.H. Trioyso, P.J. Tobin, J.K. Schaeffer, S.B. Samavedam, W.J. Taylor,C. Capasso, E. Luckowski, M. Moosa, A. Haggag, D. Roan, J. Nguyen, L. La, X.-D.Wang, S. Zollner, R. Gregory, R.S. Rai, M.W. Stoker, C.C. Hobbs, Hafnium zirconate(HfxZr1−xO2) dielectric and CET scaling challenges International Symposium on Higher-K Dielectrics at Stanford University, 22 August 2008, Stanford, CA (invited).

117. X. Luo, A.A. Demkov, D. Triyoso, P. Fejes, R. Gregory, and S. Zollner, Combined theo-retical and experimental study of thin hafnia films, Bull. Am. Phys. Soc. (2009).

118. S. Zollner, Industrial Physics Careers: A Large Company Perspective (invited), AmericanPhysical Society March meeting, Pittsburgh, PA, 17 March 2009.

119. Z. Zhang, A.S. Ozcan, C. Lavoie, S. Zollner, A. Domenicucci, A. Frye, C.E. Murray, D.-I.Lee, V. Arunachalam, B. Yang, P. Press, and S.V. Deshpande, Stress Limited SilicideFormation in Constrained Nano-dimensions, in Reliability and Materials Issues of Semi-conductor Optical and Electrical Devices, MRS Fall Meeting, Boston, MA, November 30- December 3, 2009.

120. C.S. Cook and S. Zollner, Industrial Physics Careers: A Large Company Perspective(invited), Tutorial on Physics Careers in Industry and Government, American PhysicalSociety March meeting, Portland, OR, 14 March 2010.

121. S. Zollner, Spectroscopic ellipsometry for inline process control in the semiconductorindustry (invited), 3rd NanoCharm Workshop on Non-Destructive Real Time ProcessControl, Berlin, Germany, October 13, 2010.

122. S. Zollner, Leadership behaviors for successful industrial physicists (invited), AmericanSociety of Physics Teachers (AAPT) Winter meeting, Jacksonville, FL, January 8, 2011.

123. S. Zollner, Leadership behaviors for successful industrial physicists, American PhysicalSociety March meeting, Dallas, TX, 20 March 2011 (career workshop invited talk).

124. L.S. Abdallah, S. Zollner, C. Lavoie, A. Ozcan, and M. Raymond, Dielectric functionof Ni-Pt alloys from 0.6 to 6.6 eV by spectroscopic ellipsometry, Four Corners SectionMeeting of the American Physical Society, Tucson, AZ, Oct. 20-21, 2011.

125. A.A. Medina, L.S. Abdallah, and S. Zollner, Temperature dependence of the dielectricfunction of Germanium by spectroscopic ellipsometry, Four Corners Section Meeting ofthe American Physical Society, Tucson, AZ, Oct. 20-21, 2011.

126. S. Zollner, Characterization of complex metal oxides using spectroscopic ellipsometry andother techniques, DoD Workshop on Complex Oxide and Multiferroic Thin Film MaterialsScience, Technologies, and Applications, 26 January 2012, Tucson, AZ (invited).

127. M. Spies, L.S. Abdallah, S. Zollner, C.V. Weiss, J. Zhang, S.P. Alpay, and M.W. Cole,Dielectric and optical properties of SrTiO3 films deposited from metallo-organic solution,American Physical Society March meeting, Boston, MA, 1 March 2012.

128. L. Abdallah, S. Zollner, T. Tawalbeh, I. Vasiliev, C. Lavoie, A. Ozcan, and M. Raymond,Dielectric function of Ni-Pt alloys from 0.6 to 6.6 eV by spectroscopic ellipsometry,American Physical Society March meeting, Boston, MA, 29 February 2012.

129. S. Zollner, Objectives and Assessment of the NMSU Physics Ph.D. program, AmericanPhysical Society April Meeting, Atlanta, GA, 31 March 2012, (invited).

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130. C.A. Rodriguez, C.M. Nelson, L.S. Abdallah, and S. Zollner, Determination Of RGBcolor coordinates from spectroscopic reflectance measurements, AVS 2012 New MexicoSymposium, Albuquerque, NM, May 22nd 2012.

131. C.M. Nelson, M. Spies, L.S. Abdallah, S. Zollner, Y. Xu, and H. Luo, Preparation ofabrupt LaAlO3 surfaces monitored by spectroscopic ellipsometry, AVS 2012 New MexicoSymposium, Albuquerque, NM, May 22nd 2012.

132. S. Zollner, Pirates, Spark Plugs, and Cell Phones: Physicists in Global R&D Careers,2012 Physics Department Chairs Conference, College Park, MD, 09 June 2012 (invited).

133. C.M. Nelson, M. Spies, L.S. Abdallah, S. Zollner, Y. Xu, H. Luo, Preparation of AbruptLaAlO3 Surfaces Monitored by Spectroscopic Ellipsometry, The Seventh MultifunctionalMaterials Workshop (MFM-7), Gamboa, Panama, August 5-9 2012 (invited).

134. S. Zollner, ”Das Goggomobil” or Eight Simple Rules for Industrial Physics Careers,Conference for Undergraduate Women in Physical Sciences, October 18-20, 2012, Lincoln,NE (invited).

135. L.S. Abdallah, Stefan Zollner, Tarek Tawalbeh, Igor Vasiliev, Christian Lavoie, AhmetOzcan, and Mark Raymond, Composition dependence of the optical constants of NiPtalloys determined by spectroscopic ellipsometry, Conference for Undergraduate Womenin Physical Sciences, October 18-20, 2012, Lincoln, NE (invited).

136. C.A. Rodriguez, C.M. Nelson, L.S. Abdallah, and S. Zollner, Determination Of RGBcolor coordinates from spectroscopic reflectance measurements, Annual Meeting of theFour Corners Section of the American Physical Society, Socorro, NM, October 26th,2012.

137. T. Willett-Gies, E. DeLong, S. Zollner, L.S. Abdallah, and I. Brener, Infrared LatticeDynamics of LaAlO3, Annual Meeting of the Four Corners Section of the AmericanPhysical Society, Socorro, NM, October 26th, 2012.

138. L.S. Abdallah, T. Tawalbeh, I.V. Vasiliev, S. Zollner, C. Lavoie, A. Ozcan, and M. Ray-mond, Composition dependence of the optical conductivity of NiPt alloys determined byspectroscopic ellipsometry, Annual Meeting of the Four Corners Section of the AmericanPhysical Society, Socorro, NM, October 26th, 2012.

139. A.A. Medina, L.S. Abdallah, and S. Zollner, Temperature Dependence of the DielectricFunction of Germanium by Spectroscopic Ellipsometry, AVS 2012 International Sympo-sium, Tampa, FL.

140. C.M. Nelson, M. Spies, L.S. Abdallah, S. Zollner, Y. Xu, and H. Luo, Preparation ofAbrupt LaAlO3 Surfaces Monitored by Spectroscopic Ellipsometry, AVS 2012 Interna-tional Symposium, Tampa, FL.

141. L.S. Abdallah, T. Tawalbeh, I.V. Vasiliev, S. Zollner, C. Lavoie, A. Ozcan, M. Raymond,Compositional dependence of the dielectric function and optical conductivity of NiPt alloythin films, AVS 2012 International Symposium, Tampa, FL.

142. A.A. Medina, L.S. Abdallah, E. DeLong, and S. Zollner, Determination of the dielectricfunction of germanium as a function of temperature, AAAS 2013 Emerging ResearchersNational Conference in STEM, Washington, DC, March 1st, 2013.

143. T. Willett-Gies, E. DeLong, and S. Zollner, Infrared Lattice Dynamics of LaAlO3, AVS2013 New Mexico Symposium, Albuquerque, NM, May 21st, 2013.

144. C.J. Zollner, T. Willett-Gies, and S. Zollner, FTIR Ellipsometry Studies of Spinel(MgAl2O4) AVS 2013 New Mexico Symposium, Albuquerque, NM, May 21st, 2013.

145. C.M. Nelson, M. Spies, L.S. Abdallah, and S. Zollner, Preparation of abrupt LaAlO3

surfaces monitored by spectroscopic ellipsometry, AVS 2013 New Mexico Symposium,Albuquerque, NM, May 21st, 2013.

146. C. Rodriguez, K. Mitchell, S. Zollner, T. Willett-Gies, and L. Abdallah, Optical Constantsof Thin Film Metal Oxides, AVS 2013 New Mexico Symposium, Albuquerque, NM, May21st, 2013.

147. L. Abdallah, T. Tawalbeh, I. Vasiliev, S. Zollner, C. Lavoie, A. Ozcan, and M. Raymond,Optical Constants of Ni-Pt and Ni-Pt-Si thin films AVS 2013 New Mexico Symposium,Albuquerque, NM, May 21st, 2013.

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148. T. Willett-Gies, E. DeLong, and S. Zollner, Infrared lattice dynamics of LaAlO3, Inter-national Conference on Spectroscopic Ellipsometry, Kyoto, Japan, May 26-31, 2013.

149. L. Abdallah, S. Zollner, C. Lavoie, A. Ozcan, and M. Raymond, Optical constants ofNi-Pt and Ni-Pt-Si thin films, International Conference on Spectroscopic Ellipsometry,Kyoto, Japan, May 26-31, 2013.

150. C.J. Zollner, T. Willett-Gies, and S. Zollner, FTIR ellipsometry studies of spinel(MgAl2O4), International Conference on Spectroscopic Ellipsometry, Kyoto, Japan, May26-31, 2013.

151. A.A. Medina, C.M. Nelson, C.A. Acheampong, L.S. Abdallah, and S. Zollner, Tempera-ture dependence of the E0 and E0 + ∆0 critical points in Ge, International Conference onSpectroscopic Ellipsometry, Kyoto, Japan, May 26-31, 2013.

152. S. Zollner, Precision Measurements of Optical Constants using Spectroscopic Ellipsome-try, 2013 CMOS Emerging Technologies Research Symposium, 7/17-19/2013, Whistler,BC (invited).

153. C.J. Zollner, T. Willett-Gies, and S. Zollner, Vibrational and Electronic Structure ofSpinel (MgAl2O4) determined using FTIR and VUV ellipsometry, Cornell Diversity inScholarship & Engagement Symposium, Ithaca, NY, 9/24/13.

154. A. Ghosh, N. Fernando, C.M. Nelson, A.A. Medina, S.C. Xu, J. Menendez, J. Kouve-takis, and S. Zollner, Dynamic Strain Measurements of Ge on Si using SpectroscopicEllipsometry, Rio Grande Symposium, Albuquerque, NM, 07 October 2013.

155. T.N. Nunley, T.I. Willett-Gies, and S. Zollner Infrared and visible dielectric propertiesof (LaAlO3)0.3(Sr2AlTaO6)0.7, Rio Grande Symposium, Albuquerque, NM, 07 October2013.

156. C.J. Zollner, T. Willett-Gies, and S. Zollner, Vibrational and Electronic Structure ofSpinel (MgAl2O4) determined using FTIR and VUV ellipsometry, Rio Grande Sympo-sium, Albuquerque, NM, 07 October 2013.

157. L.G. Pineda, L.S. Abdallah, and S. Zollner, Optical Properties of Bulk Nickel as a Func-tion of Temperature, Rio Grande Symposium, Albuquerque, NM, 07 October 2013.

158. A. Ghosh, N. Fernando, C.M. Nelson, A.A. Medina, S.C. Xu, J. Menendez, J. Kouvetakis,and S. Zollner, Dynamic strain measurements of Ge on Si using spectroscopic ellipsom-etry, Michigan Section of the American Association of Physics Teachers, Roscommon,Michigan, 11-12 October 2013.

159. A. Ghosh, N. Fernando, C.M. Nelson, A.A. Medina, S.C. Xu, J. Menendez, J. Kouvetakis,and S. Zollner, Experimental and Theoretical Investigation of Critical Point Energy Shiftof Ge Films Grown on Si (100) Substrate due to Strain, American Physical Society FourCorners Section Meeting, 10/18-19/2013, Denver, CO.

160. L.S. Abdallah, S. Zollner, C. Lavoie, A. Ozcan, and M. Raymond, Optical constantsof Ni1−xPtx silicides from spectroscopic ellipsometry, American Physical Society FourCorners Section Meeting, 10/18-19/2013, Denver, CO.

161. L.G. Pineda, L.S. Abdallah, and S. Zollner, Optical Properties of Bulk Nickel as a Func-tion of Temperature, American Physical Society Four Corners Section Meeting, 10/18-19/2013, Denver, CO.

162. K.N. Mitchell, C. Rodriguez, T. Willett-Gies, Y. Li, and S. Zollner, Optical propertiesof Sm doped CeO2 thin films produced by liquid solution deposition, American PhysicalSociety Four Corners Section Meeting, 10/18-19/2013, Denver, CO.

163. T.N. Nunley, T. Willett-Gies, and S. Zollner Infrared and Visible Dielectric Propertiesof (LaAlO3)0.3(Sr2AlTaO6)0.7, American Physical Society Four Corners Section Meeting,10/18-19/2013, Denver, CO.

164. A. Ghosh, N. Fernando, C.M. Nelson, A.A. Medina, S.C. Xu, J. Menendez, J. Kouvetakis,and S. Zollner, Investigation of Dynamic Strains of Ge Films on Si using SpectroscopicEllipsometry, Conference for Undergraduate Women in Physical Sciences, October 24-26,2013, Lincoln, NE (invited).

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165. C.M. Nelson, T. Willett-Gies, L.S. Abdallah, and S. Zollner, Electronic and vibrationalproperties of nickel oxide using spectroscopic ellipsometry, AVS 60th International Sym-posium, 27 October to 1 November, 2013, Long Beach, CA.

166. T. Willett-Gies, C.J. Zollner, E. DeLong, and S. Zollner, Vibrational properties of lan-thanum aluminate and magnesium aluminate spinel using Fourier transform infrared el-lipsometry, AVS 60th International Symposium, 27 October to 1 November, 2013, LongBeach, CA.

167. L.S. Abdallah, S. Zollner, C. Lavoie, A. Ozcan, and M. Raymond, Optical constants ofNi1−xPtx silicides from spectroscopic ellipsometry, AVS 60th International Symposium,27 October to 1 November, 2013, Long Beach, CA.

168. K. Mitchell, C. Rodriguez, T.I. Willett-Gies, Y. Li, and S. Zollner, Properties of Smdoped CeO2 thin films prepared by liquid solution deposition, AVS 60th InternationalSymposium, 27 October to 1 November, 2013, Long Beach, CA.

169. S. Zollner, Electronic and Vibrational Properties of Complex Metal Oxides, ElectronicMaterials and Applications 2014, Orlando, FL, January 22-24, 2014 (invited).

170. A. Ghosh, N. Fernando, C.M. Nelson, A.A. Medina, S.C. Xu, J. Menendez, J. Kouvetakis,S. Zollner, Dynamic Strain Measurements of Ge on Si using Spectroscopic Ellipsometry,41st International Conference on the Physics and Chemistry of Surfaces and Interfaces,January 12-16, 2014, Santa Fe, NM.

171. K. Mitchell, C. Rodriguez, T. Willett-Gies, Y. Li, and S. Zollner, Optical propertiesof Sm doped CeO2 thin films prepared by liquid solution deposition, 41st InternationalConference on the Physics and Chemistry of Surfaces and Interfaces, January 12-16,2014, Santa Fe, NM.

172. C.J. Zollner, T. Willett-Gies, and S. Zollner, Vibrational and Electronic Structure ofSpinel (MgAl2O4) determined using FTIR and VUV ellipsometry, 2014 Emerging Re-searchers National (ERN) Conference in STEM, Washington, DC, 2/20-22/2014.

173. A. Ghosh, N. Fernando, A.A. Medina, C.M. Nelson, S. Zollner, S.C. Xu, J. Menendez, andJ. Kouvetakis, Strain measurements of Ge epilayers on Si by spectroscopic ellipsometry,American Physical Society March meeting, Denver, CO, 3-7 March 2014.

174. S. Zollner, C.M. Nelson, T. Willett-Gies, L.S. Abdallah, and A. Ghosh, Dielectric functionof NiO and Si from 25 meV to 6 eV: What’s the difference? American Physical SocietyMarch meeting, Denver, CO, 3-7 March 2014.

175. L. Abdallah, S. Zollner, C. Lavoie, A. Ozcan, M, Raymond, Infrared optical conductiv-ity for Ni1−xPtx alloys and Ni1−xPtxSi monosilicides, American Physical Society Marchmeeting, Denver, CO, 3-7 March 2014.

176. A. Posadas, C. Lin, S. Zollner, and A. Demkov, Bandgap engineering of SrTiO3 viaAl-substitution, American Physical Society March meeting, Denver, CO, 3-7 March 2014.

177. K. Kormondy, A. Posadas, A. Slepko, A. Dhamdhere, D. Smith, K. Mitchell, S. Zollner, L.Marshall, J. Zhou, and A. Demkov, Epitaxy of polar semiconductor Co3O4 (110): growth,structure, and characterization, American Physical Society March meeting, Denver, CO,3-7 March 2014.

178. N. Fernando, A. Ghosh, T. Willett-Gies, C. Nelson, A. Medina, S.C. Xu, J. Menendez,J. Kouvetakis, S. Zollner, Thermal Strain Effects in Germanium Thin Films on Sili-con, American Institute of Aeronautics and Astronautics Region IV Student Conference,Albuquerque, NM, April 24-26, 2014.

179. S. Zollner, C.M. Nelson, A. Ghosh, T.I. Willett-Gies, and L.S. Abdallah, Band structureand phonons of bulk NiO, The Ninth International Multifunctional Materials Workshop(MFM-9), Shimla, India, June 1-5, 2014 (invited).

180. L.S. Abdallah, S. Zollner, C. Lavoie, A. Ozcan, and M. Raymond, Infrared optical con-ductivity for Ni1−xPtx alloys and Ni1−xPtxSi monosilicides, 36th Symposium on AppliedSurface Analysis, Albuquerque, NM, June 2-6, 2014.

181. Stefan Zollner, Cayla M. Nelson, Travis I. Willett-Gies, and Ayana Ghosh, DielectricFunction of NiO from 25 meV to 6 eV: Comparison with Silicon, International Confer-ence on the Physics of Semiconductors, Austin, TX, August 10-15, 2014.

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182. Kristy Kormondy, Agham Posadas, Alexander Slepko, Ajit Dhamdhere, David Smith,Khadijih Mitchell, Travis Willett-Gies, Stefan Zollner, Luke Marshall, Jianshi Zhou, andAlex Demkov Epitaxy of Polar Semiconductor Co3O4 (110): Growth, Structure, & Char-acterization, International Conference on the Physics of Semiconductors, Austin, TX,August 10-15, 2014.

183. A. O’Hara, M. Choi, A.B. Posadas, C.A. Rodriguez, H. Seinige, A.J. Kellock, M.M.Frank, M. Tsoi, S. Zollner, V. Narayanan, and A.A. Demkov, Designing Conductive Lay-ers for Fully Integrated Oxide Electronics, 45th IEEE Semiconductor Interface SpecialistsConference, San Diego, CA, Dec. 10-13, 2014.

184. Luis A. Barrera, Khadijih N. Mitchell, Lina S. Abdallah, S. Zollner, N. Pachauri, and A.Gupta, Dielectric Function of Nickel Ferrite Thin Films from 0.8 to 6.5 eV, Rio GrandeSymposium on Advanced Materials, Albuquerque, NM, October 6, 2014.

185. Stefan Zollner, Khadijih N. Mitchell, Travis I. Willett-Gies, Kristy J. Kormondy, AghamB. Posadas, Alexander Slepko, and Alexander A. Demkov, Dielectric Function of Co3O4

Thin Films from the mid-infrared to the near-UV, Rio Grande Symposium on AdvancedMaterials, Albuquerque, NM, October 6, 2014.

186. Lina S. Abdallah, Travis I. Willett-Gies, Eric Delong, and Stefan Zollner, Infrared OpticalConductivity of Ni1−xPtx alloys and Ni1−xPtxSi Monosilicides, Rio Grande Symposiumon Advanced Materials, Albuquerque, NM, October 6, 2014.

187. T. Nathan Nunley, Stefan Zollner, Agham B. Posadas, Andrew O’Hara, and AlexanderA. Demkov, Optical Constants of NbO2 on LSAT grown by MBE from 0.2 to 6.5 eV, RioGrande Symposium on Advanced Materials, Albuquerque, NM, October 6, 2014.

188. D. Trujillo, L.G. Pineda, and S. Zollner, Temperature dependence of the dielectric func-tion of Ni near the Curie temperature, Rio Grande Symposium on Advanced Materials,Albuquerque, NM, October 6, 2014.

189. K.N. Mitchell, T.I. Willett-Gies, S. Zollner, K.J. Kormondy, A.B. Posadas, A. Slepko,A.A. Demkov, Temperature dependence of the dielectric function and band gap of Co3O4

thin films from the mid-infrared to the near-UV (invited), Electronic Materials and Ap-plications 2015, Orlando, FL, January 21 - 23, 2015.

190. Y. Cui, W. Geerts, F. Twagirayezu, S. Zollner, IR Ellipsometry on RF sputtered Permal-loy Oxide thin films, American Physical Society March meeting, San Antonio, TX, March2-6, 2015.

191. Alexander Demkov, Miri Choi, Matthew Butcher, Cesar Rodriguez, Qian He, AghamPosadas, Albina Borisevich, Stefan Zollner, Chungwei Lin, and Elliott Ortmann, Opticalproperties of transition metal oxide quantum wells, American Physical Society Marchmeeting, San Antonio, TX, March 2-6, 2015.

192. C. Xu, J. Gallagher, C. Senaratne, C. Brown, S. Zollner, J. Kouvetakis, and J. Menendez,Doping and strain dependence of the electronic band structure in Ge and GeSn alloys,American Physical Society March meeting, San Antonio, TX, March 2-6, 2015.

193. T.N. Nunley, S. Zollner, T. Hadamek, A.B. Posadas, A. O’Hara, and A.A. Demkov,Ellipsometric Study of NbO2 Grown by MBE on LSAT from 77 to 800 K, AmericanPhysical Society March meeting, San Antonio, TX, March 2-6, 2015.

194. N. Fernando, T.N. Nunley, S. Zollner, S. Xu, J. Menendez, and J. Kouvetakis, Tempera-ture dependent band gaps of GeSiSn alloys grown on Ge buffered Si substrates, AmericanPhysical Society March meeting, San Antonio, TX, March 2-6, 2015.

195. S. Zollner, D. Trujillo, L. Pineda, and L. Abdallah, Temperature dependence of the di-electric function of Ni near the Curie temperature, American Physical Society Marchmeeting, San Antonio, TX, March 2-6, 2015.

196. Mark Sholte, Chungwei Lin, Kristy Kormondy, Timothy Nunley, Agham Posadas, StefanZollner, and Alexander Demkov, Investigation of the Band Gap in Co3O4, AmericanPhysical Society March meeting, San Antonio, TX, March 2-6, 2015.

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197. Alexander A. Demkov, Agham B. Posadas, Tobias Hadamek, Andrew O’Hara, TimothyN. Nunley, Sylvie Rangan, Stefan Zollner, and Robert A. Bartynski, Growth and elec-tronic properties of epitaxial NbO2, 18th European Molecular Beam Epitaxy Workshop,Canazei, TN, Italy, March 15-18, 2015.

198. Dennis P. Trujillo, Laura Pineda, Lina Abdallah, and Stefan Zollner, Temperature De-pendence of the Dielectric Function of Ni near the Curie Temperature, AVS 2015 NewMexico Symposium, Albuquerque, NM, May 19th, 2015.

199. Nalin Fernando, Timothy Nunley, Stefan Zollner, Dainan Zhang, Ryan Hickey, JamesKolodzey, Compositional and strain dependence of the band gaps of pseudomorphicGe1−ySny alloys on Ge, AVS 2015 New Mexico Symposium, Albuquerque, NM, May19th, 2015.

200. D. Lidsky, S. Zollner, M. Zamiri, A. Iurov, B. Klein, S. Krishna, Variable Angle Spec-troscopic Ellipsometer Characterization of InAs/GaSb Type-II Strain Layer Superlattice,AVS 2015 New Mexico Symposium, Albuquerque, NM, May 19th, 2015.

201. Luis A. Barrera, Khadijih N. Mitchell, Lina S. Abdallah, Stefan Zollner, N. Pachauri,Arunava Gupta, Determination of the Electronic Structure of Nickel Ferrite Thin Films,AVS 2015 New Mexico Symposium, Albuquerque, NM, May 19th, 2015.

202. A. Ghosh, C.M. Nelson, T. Willett-Gies, L.S. Abdallah, and S. Zollner, Lattice Dynamicsand Electronic Structure of NiO, CINT Users Meeting, 21 September 2015, Santa Fe,NM.

203. J. Moya, N.S. Samarasingha, and S. Zollner, Comparison of LiF and NiO crystallo-graphic structure using XRD, APS National Mentoring Community and Bridge ProgramConference, Miami, FL, 10 October 2015.

204. A. Ghosh, C.M. Nelson, L.S. Abdallah, and S. Zollner, Optical constants and band struc-ture of NiO, APS Four Corners Section Meeting, 16 October 2015, Tempe, AZ.

205. S. Zollner, How thick is my film?, APS Four Corners Section Meeting, 16 October 2015,Tempe, AZ (invited).

206. J. Moya, N. Samarasingha, and S. Zollner, Comparison of LiF and NiO crystallographicstructure using XRD, APS Four Corners Section Meeting, 16 October 2015, Tempe, AZ.

207. C. Rodriguez, N. Samarasingha, J. Moya, S. Zollner, P. Ponath, and A. Demkov, Com-parison of the dielectric function of SrTiO3 on SrTiO3, Si, and Ge substrates, APS FourCorners Section Meeting, 16 October 2015, Tempe, AZ.

208. T.N. Nunley, N. Fernando, J. Moya, C.M. Nelson, and S. Zollner, Growth and propertiesof Ge thermal oxides, APS Four Corners Section Meeting, 16 October 2015, Tempe, AZ.

209. N. Samarasingha, J. Moya, S. Zollner, S. Chattopadhyay, P. Ponath, and A. Demkov,Structural properties of SrTiO3 thin films on semiconductors, APS Four Corners SectionMeeting, 16 October 2015, Tempe, AZ.

210. N. Fernando, J. Moya, S. Zollner, J. Hart, D. Zhang, R. Hickey, R. Hazbun, and J.Kolodzey, Strain dependence of the band structure and critical points of pseudomorphicGe1−ySny alloys on Ge, APS Four Corners Section Meeting, 16 October 2015, Tempe,AZ.

211. N. Fernando, T.N. Nunley, S. Zollner, D. Zhang, R. Hickey, J. Kolodzey, Band Structureand Critical Points of Pseudomorphic Ge1−ySny Alloys on Ge, AVS 62nd InternationalSymposium and Exhibition, San Jose, CA, 19 October 2015.

212. A. Ghosh, T. Willett-Gies, C. Nelson, L. Abdallah, and S. Zollner, Phonon Dispersion andElectronic Band Structure of NiO, AVS 62nd International Symposium and Exhibition,San Jose, CA, 22 October 2015.

213. N. Samarasingha, C. Rodriguez, J. Moya, S. Zollner, N. Fernando, S. Chattopadhyay,P. Ponath, and A.A. Demkov, Structural and optical properties of SrTiO3 thin films onsemiconductors, 43rd Conference on the Physics and Chemistry of Surfaces and Interfaces,Palm Springs, CA, 17-21 January 2016.

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214. N. Samarasingha, C. Rodriguez, J. Moya, S. Zollner, N. Fernando, S. Chattopadhyay,P. Ponath, and A.A. Demkov, Structural and optical properties of SrTiO3 thin filmson different substrates, 2016 Lawrence Symposium on Epitaxy, 21-24 February 2016,Scottsdale, AZ.

215. T.N. Nunley, N. Fernando, J. Moya, and S. Zollner, Optical constants of Ge and GeO2

from ellipsometry, 80. Jahrestagung der DPG und DPG-Fruhjahrstagung, 6-11 March2016, Regensburg, Germany.

216. S. Zollner, C.M. Nelson, T.I. Willett-Gies, A. Ghosh, and L.S. Abdallah, Electronic bandstructure and infrared lattice dynamics of single-crystal nickel oxide (NiO), 80. Jahresta-gung der DPG und DPG-Fruhjahrstagung, 6-11 March 2016, Regensburg, Germany.

217. A.A. Taludker, Y. Cui, M. Compton, W. Geerts, L. Scolfaro, and S. Zollner, FTIRellipsometry study on RF sputtered Ni81Fe19O thin films, Materials Research SocietySpring Meeting, Symposium EP11.6.16, 30 March 2016 .

218. J.M. Moya, T.N. Nunley, D.P. Adams, and S. Zollner, Optical properties of Ni and Ni:Valloys, AVS 2016 New Mexico Symposium, Albuquerque, NM, May 24th, 2016.

219. J. Cooke, T.N. Nunley, T. Willett-Gies, and S. Zollner, Infrared and visible dielec-tric properties of (LaAlO3)0.3(Sr2AlTaO6)0.35, AVS 2016 New Mexico Symposium, Al-buquerque, NM, May 24th, 2016.

220. N.S. Fernando, R. Hickey, J. Hart, R. Hazbun, D. Zhang, J. Kolodzey, and S. Zollner,Band structure of pseudomorphic Ge1−x−ySixSny on Ge, AVS 2016 New Mexico Sympo-sium, Albuquerque, NM, May 24th, 2016.

221. T.N. Nunley, N.S. Fernando, N. Samarasingha, J.M. Moya, C.M. Nelson, A.A. Medina,and S. Zollner, Optical characterization of Ge and Ge thermal oxides, AVS 2016 NewMexico Symposium, Albuquerque, NM, May 24th, 2016.

222. Nalin S. Fernando, T. Nathan Nunley, Ayana Ghosh, Jacqueline A. Cooke, Amber A.Medina, Chi Xu, John Kouvetakis, Stefan Zollner, Temperature dependence of the di-electric function of tensile Ge on Si, Seventh International Conference on SpectroscopicEllipsometry, Berlin, Germany, 6-10 June 2016.

223. T. Nathan Nunley, Nalin S. Fernando, Jaime M. Moya, Cayla M. Nelson, Amber A.Medina, Stefan Zollner Optical constants of Ge and thermally grown GeO2 from 0.5 to6.6 eV via multi-sample ellipsometry, Seventh International Conference on SpectroscopicEllipsometry, Berlin, Germany, 6-10 June 2016.

224. Stefan Zollner, Dennis P. Trujillo, Laura G. Pineda, Lina S. Abdallah, Temperature-dependent dielectric function of Nickel: Isotropic or anisotropic magneto-optic effect,Seventh International Conference on Spectroscopic Ellipsometry, Berlin, Germany, 6-10June 2016.

225. T. Nathan Nunley, Travis I. Willett-Gies, Stefan Zollner, Band gap and infared-activephonons of LSAT, Seventh International Conference on Spectroscopic Ellipsometry,Berlin, Germany, 6-10 June 2016.

226. Dipayan Pal, Aakash Mathur, Ajaib Singh, Surjendu Dutta, Jaya Singhal, Stefan Zollner,Sudeshna Chattopadhyay, Effect of Confinement on Optical Properties in ALD grownZnO, Seventh International Conference on Spectroscopic Ellipsometry, Berlin, Germany,6-10 June 2016.

227. Stefan Zollner, Nuwanjula Samarasingha, Cesar Rodriguez, Jaime Moya, Nalin Fernando,Patrick Ponath, Kristy Kormondy, Alex Demkov, Dipayan Pal, Aakash Mathur, AjaibSingh, Surjendu Dutta, Jaya Singhal, and Sudeshna Chattopadhyay, Excitons at inter-faces in ellipsometric spectra, 2016 AVS Texas Chapter Conference, 3-4 August 2016,Richardson, TX.

228. S. Zollner, Time-Resolved Ellipsometry: A Historical Perspective, ELIps Workshop,Prague, Czech Repuplic, October 10-12, 2016.

229. N. Fernando, S. Zollner, R. Hickey, J. Hart, R. Hazbun, D. Zhang, and J. Kolodzey, Bandgap engineering of pseudomorphic Ge1−x−ySixSny alloys on Ge for photonic applications,Joint Meeting of the Four Corners and Texas Sections of the American Physical Society,Las Cruces, NM, October 21-22, 2016.

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230. F. Abadizaman, J. Moya, and S. Zollner, Experimental Errors in Mueller Matrix Ele-ments of Isotropic Samples, Joint Meeting of the Four Corners and Texas Sections of theAmerican Physical Society, Las Cruces, NM, October 21-22, 2016.

231. Nuwanjula Samarasingha, C. Rodriguez, J. Moya, N. Fernando, S. Zollner, P. Ponath,K. Kormondy, A. Demkov, D. Pal, A. Mathur, A. Singh, S. Dutta, J. Singhal, and S.Chattopadhyay, Excitons at interfaces in thin oxide films, Joint Meeting of the FourCorners and Texas Sections of the American Physical Society, Las Cruces, NM, October21-22, 2016.

232. J.A. Cooke, T.N. Nunley, T. Willett-Gies, and S. Zollner, Infrared and visible dielec-tric properties of LSAT, Joint Meeting of the Four Corners and Texas Sections of theAmerican Physical Society, Las Cruces, NM, October 21-22, 2016.

233. Qi Zhou, Alexandra P. Hartman, Hongmei Luo, and Stefan Zollner, Spectroscopic el-lipsometry of NiO and Co3O4 thin films with different orientations grown on SrTiO3

substrates by polymer-assisted deposition, Joint Meeting of the Four Corners and TexasSections of the American Physical Society, Las Cruces, NM, October 21-22, 2016.

234. Stefan Zollner, T.N. Nunley, D.P. Trujillo, L.G. Pineda, and L.S. Abdallah, Temperature-dependent dielectric function of nickel, Joint Meeting of the Four Corners and TexasSections of the American Physical Society, Las Cruces, NM, October 21-22, 2016.

235. J.M. Moya, T.N. Nunley, N. Fernando, N. Samarasingha, and S. Zollner, FTIR ellipsom-etry studies of thermally grown GeO2 on Ge, AVS 63rd International Symposium andExhibition, Nashville, TN, 6-11 November 2016.

236. N. Fernando, R. Hickey, J. Hart, R. Hazbun, D. Zhang, J. Kolodzey, and S. Zollner,Effects of composition and strain on band gaps of pseudomorphic Ge1−x−ySixSny on Ge,AVS 63rd International Symposium and Exhibition, Nashville, TN, 6-11 November 2016.

237. J. Cooke, N. Nunley, T. Willett-Gies, and S. Zollner, Infrared and visible dielectric prop-erties of (LaAlO3)0.3(Sr2AlTaO6)0.35, AVS 63rd International Symposium and Exhibition,Nashville, TN, 6-11 November 2016.

238. N. Samarasingha, C. Rodriguez, J. Moya, N. Fernando, S. Zollner, P. Ponath, K. Kor-mondy, A. Demkov, D. Pal, A. Mathur, A. Singh, S. Dutta, J. Singhal, and S. Chattopad-hyay, Excitons at interfaces in ellipsometric spectra, AVS 63rd International Symposiumand Exhibition, Nashville, TN, 6-11 November 2016.

239. Nuwanjula Samarasingha, C. Rodriguez, J. Moya, N. Fernando, S. Zollner, P. Ponath,K. Kormondy, A. Demkov, D. Pal, A. Mathur, A. Singh, S. Dutta, J. Singhal, and S.Chattopadhyay, Excitons at oxide interfaces in ellipsometric spectra, Electronic Materialsand Applications 2017, Orlando, FL, January 18-20 (2017).

240. S. Zollner, N. Samarasingha, C. Rodriguez, J. Moya, N. Fernando, P. Ponath, K. Kor-mondy, A. Demkov, and S. Chattopadhyay, Excitons at oxide interfaces in ellipsometricspectra of SrTiO3 and ZnO, 2017 MRS Spring Meeting and Exhibit, April 17-21, Phoenix,AZ (submitted).

Invited Research Presentations (at institutions):

• Picosecond spectroscopy of two-dimensional GaSb/AlSb and InGaAs/InP structures:

1. IV. Physikalisches Institut, Universitat Stuttgart, Stuttgart, May 1987.

• From spectroscopic ellipsometry to ultrafast electronic transport:

2. Bell Communications Research, Red Bank, NJ, July 1990.3. IBM T.J. Watson Research Center, Yorktown Heights, NY, July 1990.4. Max-Planck-Institut fur FKF, Stuttgart, Germany, September 1990.5. Colloquium, Physics Department, U of Missouri at Columbia, November 18, 1991.6. Laser physics seminar series, U of California, Berkeley, November 20, 1991.7. CEEM seminar, SUNY Buffalo, November 25, 1991.8. Department of Electrical Engineering, U of Utah, Salt Lake City, January 27, 1992.

29

9. Department of Chemistry, U of North Carolina, Chapel Hill, NC, February 10, 1992.10. Department of Physics, U of Illinois at Chicago, Chicago, IL, March 5, 1992.11. Iowa State U, Department of Physics and Astronomy, Ames, Iowa, April 1, 1992.12. Virginia Tech, Department of Physics, Blacksburg, VA, April 13, 1992.13. Los Alamos National Laboratory, MEE Division, Los Alamos, NM, April 20, 1992.

• Optical Properties of SiGe-related systems:

14. IBM T.J. Watson Research Center, Yorktown Heights, NY, Oct. 3, 1991.

• Structural, optical, and transport properties of semiconductor alloys:

15. National Renewable Energy Laboratory, Golden, CO, May 4, 1992.16. Institut fur Technische Physik, U Erlangen, Germany, December 21, 1992.17. Ames Laboratory and Iowa State University, Ames, IA, April 22, 1993.

• Ultrafast Laser Spectroscopy and Advanced Electronic Materials:

18. Fall Meeting of the Iowa Section of the American Association of Physics Teachers,Iowa Central Community College, Ft. Dodge, IA, October 30, 1993.

19. Center for Microelectronic and Optical Materials Research, University of Nebraska,Lincoln, NE, June 24, 1994.

20. Department of Physics, U of Northern Iowa, Cedar Falls, IA, February 21, 1995.21. Physics Department, Saint John’s University, Collegeville, MN, February 22, 1995.

• Optical Spectroscopy of Advanced Electronic Materials for Ultrafast Device Applications

22. Department of Physics and Astronomy, ISU, Ames, IA, October 15, 1994.

• Optical Properties of Si1−x−yGexCy alloys and related heterostructures

23. Institut fur Halbleiterphysik GmbH, Frankfurt (Oder), Germany, 17 May 1995.24. Walter-Schottky-Institut, TU Munchen, Germany, 23 May 1995.25. Max-Planck-Institut fur FKF, Stuttgart, Germany, 2 June 1995.26. Electrical Engineering Department, University of Delaware, 20 October 1995.27. Dept. of Electrical and Computer Engineering, University of Iowa, Iowa City, IA, 26

Oct. 1995.

• Optical Spectroscopy of group IV semiconductors

28. Department of Physics, Technische Universitat Braunschweig, Germany, 28 Novem-ber 1996.

29. Dept. of Electrical and Computer Eng. Arizona State University, Tempe, AZ, 12Dec. 1996.

30. Motorola Semiconductor Products Sector, Materials Research and Strategic Tech-nologies, Materials Characterization Laboratory, February 1997.

• Femtosecond pump-probe spectroscopy and ultrafast hole-phonon interactions in Ge

31. Ames Lab Program Review, Ames, IA, November 21, 1996.32. Dept. of Physics, University of Missouri, Columbia, MO, February 1997.

• Optical properties and band structure of Si, Ge, and GaAs with dilute isoelectronic im-purities

33. Texas Tech University, Department of Physics, Lubbock, TX, 24 September 1998.

• Spectroscopic ellipsometry of microelectronic materials

34. Dept. of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, NE, 19November 1998.

• Spectroscopic ellipsometry from 146 nm to 15 µm on wide band-gap semiconductors andgroup-IV alloys

30

35. Dept. of Solid State Physics, Masaryk University, Brno, Czech Republic, 10 Sept.1999.

• Optical Spectroscopy in the Microelectronics Industry

36. Dept. of Physics and Astronomy, Arizona State University, Tempe, AZ, 14 April2000.

• Optical, Vibrational, and Structural Properties of High-k Transition Metal Oxides

37. Materials Science Colloquium, Vanderbilt University, Nashville, TN, 21 February2001.

38. Physics Department Colloquium, University of Arkansas, Fayetteville, AR, 22 Febru-ary 2002.

39. Materials Science Department Seminar, University of North Texas, Denton, TX, 17April 2002.

40. National Institute of Standards and Technology, Semiconductor Electronics Division,Gaithersburg, MD, 17 May 2002.

41. IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY, 16October 2002.

42. Department of Electrical and Computer Engineering, University of Delaware,Newark, DE, 12 December 2002.

• Characterization Techniques for Strained Si CMOS

43. Pontifıcia Universidade Catolica do Rio de Janeiro, Centro de Estudos em Teleco-municacoes da PUC, Rio de Janeiro, RJ, Brazil, 10 June 2003.

44. University of Missouri-Columbia, Department of Physics and Department of Electri-cal and Computer Engineering, Columbia, MO, 1 October 2003.

• The origin of birefringence in graphite-like amorphous carbon films

45. Arizona State University, Condensed Matter Physics Seminar, 30 June 2004.

• Spectroscopic Ellipsometry: A materials physics perspective

46. University of California at Los Angeles, Materials Science and Engineering Seminar,23 March 2005.

47. Xavier University, physics seminar, Cincinnati, OH, 3 February 2006.48. School of Engineering, Texas State University, 31 March 2009.49. Department of Physics, New Mexico State University, Las Cruces, NM, 1 March

2010.50. Department of Physics, University of Texas at El Paso, El Paso, TX, 7 October 2011.51. University at Albany, College of Nanoscale Science and Technology Colloquium, 5

October 2012.

• Nanoscale Materials and Structures for CMOS devices

52. Texas Tech University, Physics / Electrical Engineering Colloquium, Lubbock, TX,14 October 2005.

53. University of Cincinnati, Physics colloquium, Cincinnati, OH, 2 February 2006.54. Department of Electrical Engineering, University of California, Los Angeles, 6 June

200855. National Science Foundation, Arlington, VA, 23 June 2008.56. Department of Electrical and Computer Engineering, Arizona State University, 12

September 2008.57. School of Engineering, Texas State University, 17 September 2008.58. Department of Electrical Engineering, Virginia Tech University, 8 June 2009.59. Department of Materials Science and Engineering, University of Connecticut, Storrs,

CT, 31 March 2010.60. Department of Materials Science and Engineering, The Ohio State University,

Columbus, OH, 09 February 2011.

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61. Department of Physics, New Mexico State University, Las Cruces, NM, 10 March2011.

• Industrial Physics Careers: A Large Company Perspective

62. New Mexico State University, Department of Physics, Graduate Student PhysicsFair, Las Cruces, NM, 8 Aril 2011.

63. College Office of Undergraduate Research Initiatives, College of Science, Universityof Texas, El Paso, El Paso, TX, 16 April 2011.

• Precision Measurements of Optical Constants Using Spectroscopic Ellipsometry

64. University of New Mexico, Albuquerque, NM, Department of Chemical Engineering,1 October 2013.

65. Indian Institute of Technology (IIT) Indore, School of Basic Science, Indore, India,25 March 2014.

66. Indian Institute of Science Education and Research (IISER), Physics seminar, Pune,India, 27 March 2014.

67. Indian Institute of Technology (IIT) Bhubaneswar, School of Basic Sciences,Bhubaneswar, India, 28 March 2014.

68. University of North Texas, Department of Physics, Denton, TX, 28 April 2014.69. University of Alabama at Huntsville, Department of Electrical and Computer Engi-

neering, Huntsville, AL, 14 November 2014.70. University of Texas at El Paso, PREM Seminar, El Paso, TX, 12 December 2014.71. New Mexico State University, Department of Chemical and Materials Engineering,

Las Cruces, NM, 30 January 2015.

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publications by Dr. Stefan Zollner

Documents

Transcript of publications by Dr. Stefan Zollner