MD7IC2251NR1 MD7IC2251GNR1

1RF Device DataFreescale Semiconductor, Inc.

RF LDMOS Wideband IntegratedPower AmplifiersThe MD7IC2251N wideband integrated circuit is designed with on--chip

matching that makes it usable from 2110--2170 MHz. This multi --stagestructure is rated for 26 to 32 volt operation and covers all typical cellularbase station modulation formats.

• Typical Doherty Single--Carrier W--CDMA Characterization Performance:VDD = 28 Volts, IDQ1(A+B) = 80 mA, IDQ2A = 260 mA, VGS2B = 1.4 Vdc,Pout = 12 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz,Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

FrequencyGps(dB)

PAE(%)

Output PAR(dB)

ACPR(dBc)

2110 MHz 28.8 38.2 7.1 --34.6

2140 MHz 29.0 37.9 7.1 --36.2

2170 MHz 29.2 37.4 6.9 --36.1

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 63 Watts CWOutput Power (3 dB Input Overdrive from Rated Pout)

• Typical Pout @ 3 dB Compression Point ≃ 58 Watts (1)

Features

• 100% PAR Tested for Guaranteed Output Power Capability

• Production Tested in a Symmetrical Doherty Configuration• Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters• On--Chip Matching (50 Ohm Input, DC Blocked)• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (2)

• Integrated ESD Protection• 225°C Capable Plastic Package• In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.

Figure 1. Functional Block Diagram Figure 2. Pin Connections

Note: Exposed backside of the package isthe source terminal for the transistors.

Quiescent CurrentTemperature Compensation (2)

VDS1A

RFinA

VGS1A

RFout1/VDS2A

VGS2A

Quiescent CurrentTemperature Compensation (2)

VDS1B

RFinB

VGS1B

RFout2/VDS2B

VGS2B

VDS1A

RFinA

NC

RFinB

RFout1/VDS2A

1234

78

14

VGS1B91011

VGS2AVGS1A

NC

NC

VGS2B

NC

VDS1B

RFout2/VDS2B13

6

12

(Top View)

5

CARRIER (3)

PEAKING (3)

Carrier

Peaking

1. P3dB=Pavg+7.0dBwherePavg is theaverageoutput powermeasuredusinganunclippedW--CDMAsingle--carrier input signalwhereoutputPAR is compressed to 7.0 dB @ 0.01% probability on CCDF.

2. Refer to AN1977,Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987,Quiescent Current Controlfor theRF IntegratedCircuit DeviceFamily.Go to http://www.freescale.com/rf. SelectDocumentation/ApplicationNotes -- AN1977orAN1987.

3. Peaking and Carrier orientation is determined by the test fixture design.

2110--2170 MHz, 12 W AVG., 28 VSINGLE W--CDMA

RF LDMOS WIDEBANDINTEGRATED POWER AMPLIFIERS

MD7IC2251NR1MD7IC2251GNR1

TO--270 WB--14PLASTIC

MD7IC2251NR1

TO--270 WB--14 GULLPLASTIC

MD7IC2251GNR1

Document Number: MD7IC2251NRev. 0, 5/2012

Freescale SemiconductorTechnical Data

© Freescale Semiconductor, Inc., 2012. All rights reserved.

2RF Device Data

Freescale Semiconductor, Inc.

MD7IC2251NR1 MD7IC2251GNR1

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain--Source Voltage VDS --0.5, +65 Vdc

Gate--Source Voltage VGS --0.5, +10 Vdc

Operating Voltage VDD 32, +0 Vdc

Storage Temperature Range Tstg -- 65 to +150 °C

Case Operating Temperature TC 150 °C

Operating Junction Temperature (1,2) TJ 225 °C

Input Power Pin 28 dBm

Table 2. Thermal Characteristics

Characteristic Symbol Value (2,3) Unit

Final Doherty Application

Thermal Resistance, Junction to CaseCase Temperature 78°C, Pout = 12 W CW

Stage 1, 28 Vdc, IDQ1(A+B) = 80 mAStage 2, 28 Vdc, IDQ2A = 260 mA, VGS2B = 1.4 Vdc

Case Temperature 89°C, Pout = 50 W CWStage 1, 28 Vdc, IDQ1(A+B) = 80 mAStage 2, 28 Vdc, IDQ2A = 260 mA, VGS2B = 1.4 Vdc

RθJC

4.81.5

3.71.0

°C/W

Table 3. ESD Protection Characteristics

Test Methodology Class

Human Body Model (per JESD22--A114) 1A

Machine Model (per EIA/JESD22--A115) A

Charge Device Model (per JESD22--C101) II

Table 4. Moisture Sensitivity Level

Test Methodology Rating Package Peak Temperature Unit

Per JESD22--A113, IPC/JEDEC J--STD--020 3 260 °C

Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Stage 1 -- Off Characteristics (4)

Zero Gate Voltage Drain Leakage Current(VDS = 65 Vdc, VGS = 0 Vdc)

IDSS 10 μAdc

Zero Gate Voltage Drain Leakage Current(VDS = 28 Vdc, VGS = 0 Vdc)

IDSS 1 μAdc

Gate--Source Leakage Current(VGS = 1.5 Vdc, VDS = 0 Vdc)

IGSS 1 μAdc

Stage 1 -- On Characteristics (4)

Gate Threshold Voltage(VDS = 10 Vdc, ID = 23 μAdc)

VGS(th) 1.2 2.0 2.7 Vdc

Gate Quiescent Voltage(VDS = 28 Vdc, IDQ1(A+B) = 80 mAdc)

VGS(Q) 2.7 Vdc

Fixture Gate Quiescent Voltage(VDD = 28 Vdc, IDQ1(A+B) = 80 mAdc, Measured in Functional Test)

VGG(Q) 6.0 7.0 8.0 Vdc

1. Continuous use at maximum temperature will affect MTTF.2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.4. Each side of device measured separately.

(continued)

MD7IC2251NR1 MD7IC2251GNR1

3RF Device DataFreescale Semiconductor, Inc.

Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)

Characteristic Symbol Min Typ Max Unit

Stage 2 -- Off Characteristics (1)

Zero Gate Voltage Drain Leakage Current(VDS = 65 Vdc, VGS = 0 Vdc)

IDSS 10 μAdc

Zero Gate Voltage Drain Leakage Current(VDS = 28 Vdc, VGS = 0 Vdc)

IDSS 1 μAdc

Gate--Source Leakage Current(VGS = 1.5 Vdc, VDS = 0 Vdc)

IGSS 1 μAdc

Stage 2 -- On Characteristics (1)

Gate Threshold Voltage(VDS = 10 Vdc, ID = 150 μAdc)

VGS(th) 1.2 2.0 2.7 Vdc

Gate Quiescent Voltage(VDS = 28 Vdc, IDQ2A = 260 mAdc)

VGSA(Q) 2.7 Vdc

Fixture Gate Quiescent Voltage(VDD = 28 Vdc, IDQ2A = 260 mAdc, Measured in Functional Test)

VGGA(Q) 5.5 6.3 7.5 Vdc

Drain--Source On--Voltage(VGS = 10 Vdc, ID = 1 Adc)

VDS(on) 0.1 0.24 1.2 Vdc

Functional Tests (2,3,4) (In Freescale Doherty Production Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1(A+B) = 80 mA, IDQ2A = 260 mA,VGS2B = 1.4 Vdc, Pout = 12 W Avg., f = 2140 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01%Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

Power Gain Gps 27.6 28.2 32.0 dB

Power Added Efficiency PAE 33.5 36.9 %

Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 6.2 6.6 dB

Adjacent Channel Power Ratio ACPR --34.2 --31.5 dBc

Typical Broadband Performance (In Freescale Doherty Characterization Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1(A+B) = 80 mA,IDQ2A = 260 mA, VGS2B = 1.4 Vdc, Pout = 12 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01%Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

FrequencyGps(dB)

PAE(%)

Output PAR(dB)

ACPR(dBc)

2110 MHz 28.8 38.2 7.1 --34.6

2140 MHz 29.0 37.9 7.1 --36.2

2170 MHz 29.2 37.4 6.9 --36.1

1. Each side of device measured separately.2. Part internally matched both on input and output.3. Measurement made with device in a Symmetrical Doherty configuration.4. Measurement made with device in straight lead configuration before any lead forming operation is applied.

(continued)

4RF Device Data

Freescale Semiconductor, Inc.

MD7IC2251NR1 MD7IC2251GNR1

Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)

Characteristic Symbol Min Typ Max Unit

Typical Performances (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1(A+B) = 80 mA, IDQ2A = 260 mA, VGS2B =1.4 Vdc, 2110--2170 MHz Bandwidth

Pout @ 1 dB Compression Point, CW P1dB 40 W

Pout @ 3 dB Compression Point (2) P3dB 58 W

IMD Symmetry @ 18 W PEP, Pout where IMD Third OrderIntermodulation 30 dBc(Delta IMD Third Order Intermodulation between Upper and LowerSidebands > 2 dB)

IMDsym 25 MHz

VBW Resonance Point(IMD Third Order Intermodulation Inflection Point)

VBWres 65 MHz

Quiescent Current Accuracy over Temperaturewith 4.7 kΩ Gate Feed Resistors (--30 to 85°C) (3) Stage 1

Stage 2

∆IQT

1.55.0

%

Gain Flatness in 60 MHz Bandwidth @ Pout = 12 W Avg. GF 0.2 dB

Gain Variation over Temperature(--30°C to +85°C)

∆G 0.028 dB/°C

Output Power Variation over Temperature(--30°C to +85°C)

∆P1dB 0.028 dB/°C

1. Measurement made with device in a Symmetrical Doherty configuration.2. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where

output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.3. Refer toAN1977,QuiescentCurrent Thermal TrackingCircuit in theRF IntegratedCircuit Family and toAN1987,QuiescentCurrentControl

for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 orAN1987.

MD7IC2251NR1 MD7IC2251GNR1

5RF Device DataFreescale Semiconductor, Inc.

Figure 3. MD7IC2251NR1(GNR1) Production Test Circuit Component Layout

MD7IC2251NRev. 1

CUTOUTAREA

VGS1A VGS2A VDS1A

R1

VGS1B VGS2B VDS1BVDS2B

VDS2A

R2

C1

C23C7 C9

C13

C16

C22C8 C10

C15C19

C18C20C17

Z1

R5

R3

R4

C2

C5 C6

C14

C21C12

C11

C3 C4

C

P

Table 6. MD7IC2251NR1(GNR1) Production Test Circuit Component Designations and Values

Part Description Part Number Manufacturer

C1, C2, C3, C4, C5, C6 10 μF Chip Capacitors GRM55DR61H106KA88L Murata

C7, C8 4.7 pF Chip Capacitors ATC600F4R7BT250XT ATC

C9, C10 5.6 pF Chip Capacitors ATC600F5R6BT250XT ATC

C11, C12 39 pF Chip Capacitors ATC600F390JT250XT ATC

C13, C14, C15, C16, C17, C18 4.7 μF Chip Capacitors GRM31CR71H475KA12L Murata

C19, C20 0.5 pF Chip Capacitors ATC600F0R5BT250XT ATC

C21 0.9 pF Chip Capacitor ATC600F0R9BT250XT ATC

C22, C23 1.0 μF Chip Capacitors GRM31CR71H105KA12L Murata

R1, R2, R3, R4 4.7 kΩ, 1/4 W Chip Resistors CRCW12064K70FKEA Vishay

R5 50 Ω, 10 W, Termination RFP-06012A15Z50 Anaren

Z1 2100--2200 MHz, 90°, 3 dB Chip Hybrid Coupler GSC355-HYB2150 Soshin

PCB 0.020″, εr = 3.5 RF-35A2 Taconic

6RF Device Data

Freescale Semiconductor, Inc.

MD7IC2251NR1 MD7IC2251GNR1

Figure 4. MD7IC2251NR1(GNR1) Characterization Test Circuit Component Layout

MD7IC2251NRev. 1

CUTOUTAREA

VGS1A VGS2A VDS1A

R1

VGS1B VGS2B VDS1BVDS2B

VDS2A

R2

C1

C23C7 C9

C13

C16

C22C8 C10

C15C19

C18C20C17

Z1

R5

R3

R4

C2

C5 C6

C14

C21C12

C11

C3 C4

C

P

Table 7. MD7IC2251NR1(GNR1) Characterization Test Circuit Component Designations and Values

Part Description Part Number Manufacturer

C1, C2, C3, C4, C5, C6 10 μF Chip Capacitors GRM55DR61H106KA88L Murata

C7, C8 4.7 pF Chip Capacitors ATC600F4R7BT250XT ATC

C9, C10 5.6 pF Chip Capacitors ATC600F5R6BT250XT ATC

C11, C12 39 pF Chip Capacitors ATC600F390JT250XT ATC

C13, C14, C15, C16, C17, C18 4.7 μF Chip Capacitors GRM31CR71H475KA12L Murata

C19, C20 0.5 pF Chip Capacitors ATC600F0R5BT250XT ATC

C21 0.9 pF Chip Capacitor ATC600F0R9BT250XT ATC

C22, C23 1.0 μF Chip Capacitors GRM31CR71H105KA12L Murata

R1, R2, R3, R4 4.7 kΩ, 1/4 W Chip Resistors CRCW12064K70FKEA Vishay

R5 50 Ω, 10 W, Termination RFP-06012A15Z50 Anaren

Z1 2100--2200 MHz, 90°, 3 dB Chip Hybrid Coupler GSC355-HYB2150 Soshin

PCB 0.020″, εr = 3.5 RF-35A2 Taconic

MD7IC2251NR1 MD7IC2251GNR1

7RF Device DataFreescale Semiconductor, Inc.

TYPICAL CHARACTERISTICS

2060

ACPR

f, FREQUENCY (MHz)

Figure 5. Output Peak--to--Average Ratio Compression (PARC)Broadband Performance @ Pout = 12 Watts Avg.

--4

0

--1

--2

--3

31

30.6

--40

39

37

35

33

--30

--32

--34

--36

PAE,POWER

ADDED

EFFICIENCY(%)

Gps,POWER

GAIN(dB) 29.8

29

28.2

27.4

2080 2100 2120 2140 2160 2180 2200 2220

31

--38

--5

ACPR

(dBc)

Figure 6. Intermodulation Distortion Productsversus Two--Tone Spacing

TWO--TONE SPACING (MHz)

10--70

--20

--30

1 100

IMD,INTERMODULATIONDISTORTION(dBc)

--40IM5--U

IM5--L

IM7--LIM7--U

VDD = 28 Vdc, Pout = 18 W (PEP)IDQ1(A+B) = 80 mA, IDQ2A = 260 mA

Figure 7. Output Peak--to--Average RatioCompression (PARC) versus Output Power

Pout, OUTPUT POWER (WATTS)

--1

--3

--5

10

0

--2

--4

OUTPUTCOMPRESSIONAT

0.01%

PROBABILITY

ONCCDF(dB)

5 15 2026

50

46

42

38

34

30

PAE,POWER

ADDED

EFFICIENCY(%)

--1 dB = 7.2 W--2 dB = 9.9 W

--3 dB = 12.5 W

30

ACPR

ACPR

(dBc)

--50

--20

--25

--30

--40

--35

--45

30

Gps,POWER

GAIN(dB)

29

28

27

26

25

24

Gps

30.2

29.4

28.6

27.8

27

Input Signal PAR = 9.9 dB @0.01% Probability on CCDF

3.84 MHz Channel Bandwidth, Input SignalPAR = 9.9 dB @ 0.01% Probability on CCDF

PAE

PARC

25

PAE

PARC

PARC(dB)

Gps

VDD = 28 Vdc, Pout = 12 W (Avg.)IDQ1(A+B) = 80 mA, IDQ2A = 260 mAVGS2B = 1.4 Vdc, Single--Carrier W--CDMA3.84 MHz Channel Bandwidth

--50

--60VGS2B = 1.4 Vdc, Two--Tone Measurements(f1 + f2)/2 = Center Frequency of 2140 MHz

IM3--L

IM3--U

--6

VDD = 28 Vdc, IDQ1(A+B) = 80 mAIDQ2A = 260 mA, VGS2B = 1.4 Vdcf = 2140 MHz, Single--CarrierW--CDMA

8RF Device Data

Freescale Semiconductor, Inc.

MD7IC2251NR1 MD7IC2251GNR1

TYPICAL CHARACTERISTICS

1

ACPR

Pout, OUTPUT POWER (WATTS) AVG.

Figure 8. Single--Carrier W--CDMA Power Gain, PowerAdded Efficiency and ACPR versus Output Power

--30

--35

25

31

0

60

PAE,POWER

ADDED

EFFICIENCY(%)

Gps,POWER

GAIN(dB)

30

10 100

ACPR

(dBc)

28

27

--20

--40

--45

--50

Figure 9. Broadband Frequency Response

0

36

1800

f, FREQUENCY (MHz)

30

24

18

1900

GAIN(dB)

Gain

2000 2100 2200 2600

12

29

50

40

30

20

10

6

Gps

VDD = 28 Vdc, IDQ1(A+B) = 80 mAIDQ2A = 260 mA, VGS2B = 1.4 Vdc

PAE

2110 MHz

VDD = 28 VdcPin = 0 dBmIDQ1(A+B) = 80 mAIDQ2A = 260 mAVGS2B = 1.4 Vdc

2300 2400 2500

26

--25

2140 MHz

2170 MHz

Single--Carrier W--CDMA3.84 MHz Channel BandwidthInput Signal PAR = 9.9 dB@ 0.01% Probabilityon CCDF

2140 MHz

2110 MHz

2170 MHz

W--CDMA TEST SIGNAL

100.0001

100

0

PEAK--TO--AVERAGE (dB)

Figure 10. CCDF W--CDMA IQ MagnitudeClipping, Single--Carrier Test Signal

10

1

0.1

0.01

0.001

2 4 6 8

PROBABILITY

(%)

W--CDMA. ACPR Measured in 3.84 MHzChannel Bandwidth @ ±5 MHz Offset.Input Signal PAR = 9.9 dB @ 0.01%Probability on CCDF

Input Signal

12

--60

--100

10

(dB)

--20

--30

--40

--50

--70

--80

--90

3.84 MHzChannel BW

7.21.8 5.43.60--1.8--3.6--5.4--9 9

f, FREQUENCY (MHz)

Figure 11. Single--Carrier W--CDMA Spectrum

--7.2

--ACPR in 3.84 MHzIntegrated BW

+ACPR in 3.84 MHzIntegrated BW

--10

0

MD7IC2251NR1 MD7IC2251GNR1

9RF Device DataFreescale Semiconductor, Inc.

VDD = 28 Vdc, IDQ1(A+B) = 80 mA, IDQ2A = 260 mA, CW

f(MHz)

Zin(Ω)

Zload (1)

(Ω)

Max Output Power

P1dB P3dB

(dBm) (W) PAE (%) (dBm) (W) PAE (%)

2110 68.0 j42.0 7.20 j14.0 45.8 38 52.2 46.4 44 53.1

2140 60.6 j37.0 7.40 j14.4 45.7 37 51.9 46.4 44 52.7

2170 54.0 j31.0 7.30 j14.7 45.7 37 51.6 46.4 44 52.2

(1) Load impedance for optimum P1dB power.

Zin = Impedance as measured from input contact to ground.Zload = Impedance as measured from drain contact to ground.

Figure 12. Carrier Side Load Pull Performance Maximum P1dB Tuning

DeviceUnderTest

OutputLoad PullTuner

Zin Zload

VDD = 28 Vdc, IDQ1(A+B) = 80 mA, IDQ2A = 260 mA, CW

f(MHz)

Zin(Ω)

Zload (1)

(Ω)

Max Power Added Efficiency

P1dB P3dB

(dBm) (W) PAE (%) (dBm) (W) PAE (%)

2110 60.0 j53.0 9.10 j8.80 44.4 28 58.1 45.0 32.0 57.6

2140 54.0 j46.0 8.20 j9.10 44.4 28 57.6 44.9 31.0 57.0

2170 48.0 j39.0 7.90 j9.60 44.4 28 57.4 45.0 32.0 56.7

(1) Load impedance for optimum P1dB efficiency.

Zin = Impedance as measured from input contact to ground.Zload = Impedance as measured from drain contact to ground.

Figure 13. Carrier Side Load Pull Performance Maximum Power Added Efficiency Tuning

DeviceUnderTest

OutputLoad PullTuner

Zin Zload

10RF Device Data

Freescale Semiconductor, Inc.

MD7IC2251NR1 MD7IC2251GNR1

PACKAGE DIMENSIONS

MD7IC2251NR1 MD7IC2251GNR1

11RF Device DataFreescale Semiconductor, Inc.

12RF Device Data

Freescale Semiconductor, Inc.

MD7IC2251NR1 MD7IC2251GNR1

MD7IC2251NR1 MD7IC2251GNR1

13RF Device DataFreescale Semiconductor, Inc.

14RF Device Data

Freescale Semiconductor, Inc.

MD7IC2251NR1 MD7IC2251GNR1

MD7IC2251NR1 MD7IC2251GNR1

15RF Device DataFreescale Semiconductor, Inc.

16RF Device Data

Freescale Semiconductor, Inc.

MD7IC2251NR1 MD7IC2251GNR1

PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS

Refer to the following documents, software and tools to aid your design process.

Application Notes

• AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages• AN1955: Thermal Measurement Methodology of RF Power Amplifiers• AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family• AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family• AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic PackagesEngineering Bulletins

• EB212: Using Data Sheet Impedances for RF LDMOS DevicesSoftware

• Electromigration MTTF Calculator• RF High Power Model• .s2p FileDevelopment Tools

• Printed Circuit Boards

For Software and Tools, do a Part Number search at http://www.freescale.com, and select the Part Number link. Go to theSoftware & Tools tab on the parts Product Summary page to download the respective tool.

REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

0 May 2012 • Initial Release of Data Sheet

MD7IC2251NR1 MD7IC2251GNR1

17RF Device DataFreescale Semiconductor, Inc.

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Document Number: MD7IC2251NRev. 0, 5/2012