Low-Noise Wide-Band Cooled amplifiers with InP Transistors
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Transcript of Low-Noise Wide-Band Cooled amplifiers with InP Transistors
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26/04/2004 Oxford 1
FG-IGNCentro Astronómico de Yebes
AMSTARCAY
Low-Noise Wide-Band Cooled amplifiers with InP Transistors
Juan Daniel Gallego PuyolFrancisco Colomer
Isaac López FernándezAlberto Barcia
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26/04/2004 Oxford 2
FG-IGNCentro Astronómico de Yebes
AMSTARCAY
OUTLINE
• Previous experience• Technical details• Deliverables• Schedule• Manpower
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26/04/2004 Oxford 3
FG-IGNCentro Astronómico de Yebes
AMSTARCAY
Experience in Cryogenic Amplifiers (1)
• More than 150 cryogenic LNAs for different applications:– IRAM: Grenoble, PdB interferometer, 30m (IF amplifiers)– HERSCHEL:
• DMs for mixer groups (CALTECH, DEMIRM, IRAM, JPL, KOSMA, SRON)
• DMs Delivered (QMs, FMs, FSs in ALCATEL)– ALMA: Development of 4-8 and 4-12 GHz amplifiers– CFA: Harvard, USA SMA– ARECIBO, Puerto Rico– BORDEAUX Observatory– EMCOR (Atmospheric sensing)– CAY: VLBI receivers (X and K band)– ESOC: X-band for Deep Space Antennas
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26/04/2004 Oxford 4
FG-IGNCentro Astronómico de Yebes
AMSTARCAY
Experience in Cryogenic Amplifiers (2)
• Wide experience with HEMT devices– More than 30 batches of commercial GaAs transistors tested– Several models of InP transistors measured
• JPL-TRW (CHOP program): 14 batches, 9 models• ETH Zurich: 7 batches, 4 models• HRL: 2 batches, 3 models• Chalmers University: 1 batch
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26/04/2004 Oxford 5
FG-IGNCentro Astronómico de Yebes
AMSTARCAY
3 4 5 6 7 8 90
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YCF 2 InP devices comparisonOptimum noise bias
ETH T-35 TRW T-45 TRW T-42
Gai
n (d
B)
Freq. (GHz)
0.0
2.5
5.0
7.5
10.0
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Tn (K
)
ETH T-35 TRW T-45 TRW T-42
ETH T-35 200×0.2 μm gate Experimental transistor Design by request
TRW T-45 CRYO4 200×0.1 μm gate Used in DMs Space qualified, to be used in HIFI CHOP developed
TRW T-42 CRYO3 200×0.1 μm gate Best performance
0.22 mm
0.19
mm Transistors
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26/04/2004 Oxford 6
FG-IGNCentro Astronómico de Yebes
AMSTARCAY
Interstage matching circuits
MICROTECHDC connector
SMA connector
Bias cavity with biasing circuits
Transistor area detail.See sourceinductive feedbackand drainresistive loading
ETH transistorwith bonding wires
1 2 3
Input matching circuit Output matching circuit
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26/04/2004 Oxford 7
FG-IGNCentro Astronómico de Yebes
AMSTARCAY
YCA 2000 (4-8 GHz)
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26/04/2004 Oxford 8
FG-IGNCentro Astronómico de Yebes
AMSTARCAY
YCA 2000 (4-8 GHz)
3 4 5 6 7 8 90
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G
Gai
n [d
B]
f [GHz]
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Tn
YCA 2011 1 0703PD<9 mW, T=14 K
Noi
se T
empe
ratu
re [K
]
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26/04/2004 Oxford 9
FG-IGNCentro Astronómico de Yebes
AMSTARCAY
AMSTAR Deliverables
• Amplifier for 2.1.1 80-116 GHz 3mm mixers (IRAM)– One unit– IF=4-8 GHz, 3 stages– Due mid 2005
• Amplifier for 2.1.3 0.5 mm mixer (SRON-TuD)– One unit– IF=4-8 GHz, 3 stages– Due mid 2005
• Amplifier for 2.4.1 4-pixel 3 mm test array (IRAM-RAL)– One unit ? (re-use of 2.1.1)
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26/04/2004 Oxford 10
FG-IGNCentro Astronómico de Yebes
AMSTARCAY
AMSTAR Schedule and Milestones
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26/04/2004 Oxford 11
FG-IGNCentro Astronómico de Yebes
AMSTARCAY
AMSTAR Manpower