IEEE Electron Devices Society ED Newsletter S July 2003 ... · IEEE Electron Devices Society...

The 29th Annual IEEE International SOI Conference, the premier confer-ence dedicated to current trends in Silicon-on-Insulator technology, will beheld September 30-October 2, 2003 at the Newport Beach Marriott Hotel &Tennis Club, Newport Beach, California. A one-day Tutorial Short Coursewill precede the conference on Monday, September 29th.

The SOI conference was established with the support of IEEE to provide aforum for open discussion in all areas of silicon-on-insulator technologies and theirapplications. Ever increasing demand and modifications in this technology bringthe industry together to discuss new accomplishments and gains. Original paperspresenting new developments in the industry will be presented at the conference.

The 2003 SOI International Conference will begin with a half-day plenarysession followed by two days of oral sessions, a poster session and a late newssession. A Best Paper Award will be presented at the closing on Thursday. Ses-sion topics will focus on basic materials research, device research, circuit devel-opment (special and improved) and applications and uses. Rump sessions willbe held on Wednesday evening, October 1. These sessions encourage atten-dees to share their opinions and expertise on the chosen topics of discussion.

Additionally, a materials and equipment exhibition relating to SOI tech-nology will be held concurrently with the conference. Participants will havethe opportunity to visit the exhibit area to see what’s new in SOI. Overall,the 2003 SOI International Conference offers attendees a broad spectrum ofinformation, opportunities for discussion with one’s peers, and is a must forengineers with direct involvement or partial involvement in SOI.

The 2003 SOI Conference seeks papers on a wide range of SOI technol-ogy including:

• SOI material science/modification, material characterization, and manufacture

• SOI device Physics and modeling• SOI circuit applications (high-performance microprocessors, SRAMs,

Contributions WelcomeReaders are encouraged to submit news items con-cerning the Society and its members. Please sendyour ideas/articles directly to either the Editor-in-Chief or appropriate Editor. All contact informationis listed on the back cover page. Whenever possi-ble, e-mail is the preferred form of submission.

Newsletter DeadlinesIssue Due DateJanuary October 1stApril January 1stJuly April 1stOctober July 1st

Your Comments SolicitedYour comments are most welcome. Please write directly to the Editor-in-Chiefof the Newsletter at the address given on the back cover page.

Table of Contents2003 IEEE International SOI Conference...................................................1

EDS Educational Activities CommitteeReport ..........................................................2

Upcoming Technical Meetings.................3• 2003 SISPAD • 2003 ISSM • 2003 ISCS

Society News...............................................8• Announcement of Newly Elected EDS AdCom

Members • William R. Cherry Award • Status Report from the 2002 EDS Graduate

Student Fellowship Winners • EDS Administrative Committee Election Process• Call for Nominations – EDS AdCom• Call for Nominations for the EDS Chapter of

the Year Award • EDS Chapter Subsidies for 2004 • EDS Web Site Gets a New Look• EDS Distinguished Lecturer Program – Lecturers

Residing in Eastern USA & Canada (Regions1-3 & 7)

• IEDM Short Courses on Videotape• Congratulations to the EDS Members Elected

Recently Elected to IEEE Senior Member Grade!

Regional & Chapter News ......................15EDS Meetings Calendar ...........................22Request for Assistance in Obtaining PastProceedings of the IEDM..........................23

IEEE ElectronDevices Society

Newsletter

(continued on page 4)

July 2003Vol. 10, No. 3 ISSN:1074 1879

Editor-in-Chief: Ninoslav D. Stojadinovic

EEDDSS

2003 IEEE International SOIConference

2003 IEEE International SOIConference

IEEE Electron Devices Society Newsletter ❍ July 2003

Electron Devices SocietyPresidentSteven J. HilleniusAgere SystemsTel: +1 610 712 6054E-Mail: [email protected]

Vice PresidentHiroshi IwaiTokyo Institute of TechnologyTel: +81 45 924 5471E-Mail: [email protected]

TreasurerPaul K. L. YuUniversity of California at San DiegoTel: +1 858 534 6180E-Mail: [email protected]

SecretaryJohn K. LowellConsultantTel: +1 972 839 4900E-Mail: [email protected]

Sr. Past PresidentBruce F. GriffingDupont OptolithographyTel: +1 512 310 6550E-Mail: [email protected]

Jr. Past PresidentCary Y. YangSanta Clara UniversityTel: +1 408 554 6814E-Mail: [email protected]

EDS Executive DirectorWilliam F. Van Der VortIEEE Operations Center445 Hoes LanePiscataway, NJ 08854Tel: +1 732 562 3926Fax: +1 732 235 1626E-Mail: [email protected]

Awards ChairAlfred U. Mac RaeMac Rae TechnologiesTel: +1 908 464 6769E-Mail: [email protected]

Educational Activities ChairIlesanmi AdesidaUniversity of IllinoisTel: +1 217 244 6379E-Mail: [email protected]

Meetings ChairKenneth F. GallowayVanderbilt UniversityTel: +1 615 322 0720E-Mail: [email protected]

Membership ChairJames B. KuoNational Taiwan UniversityTel: +886 2 236352251 Ext. 338E-Mail: [email protected]

Publications ChairRenuka P. JindalUniversity of Louisiana at LafayetteTel: +1 337 482 6570E-Mail: [email protected]

Regions/Chapters ChairCor L. ClaeysIMECTel: +32 16 281328E-Mail: [email protected]

IEEE Newsletter CoordinatorAndrea WatsonIEEE Operations Center445 Hoes LanePiscataway, NJ 08854Tel: +1 732 562 6345Fax: +1 732 981 1855E-Mail: [email protected]

IEEE Electron Devices Society Newsletter (ISSN 1074 1879) is published quarterly by the Electron Devices Society of the Institute of Electrical and ElectronicsEngineers, Inc. Headquarters: 3 Park Avenue, 17th Floor, New York, NY 10016-5997. Printed in the U.S.A. One dollar ($1.00) per member per year is included inthe Society fee for each member of the Electron Devices Society. Periodicals postage paid at New York, NY and at additional mailing offices. Postmaster: Sendaddress changes to IEEE Electron Devices Society Newsletter, IEEE, 445 Hoes Lane, P.O. Box 1331, Piscataway, NJ 08855-1331.

Copyright © 2003 by IEEE: Information contained in this Newsletter may be copied without permission provided that copies are not used or distributed for directcommercial advantage, and the title of the publication and its date appear on each photocopy.

EDS ADCOM ELECTED MEMBERS-AT-LARGE

Term Expires:

2003 2004 *2005

I. Adesida (2) M. Estrada del Cueto (1) C.L. Claeys (2)T. Hiramoto (1) K. F. Galloway (2) J.A. Dayton, Jr. (2)L. Lunardi (1) S. J. Hillenius (2) M. Fukuma (2)A. A. Santos (2) C. Jagadish (2) F.J. Garcia-Sanchez (1)S. C. Sun (2) J. K. O. Sin (1) K. Lee (2)H. S. P. Wong (1) R. Singh (2) J.J. Liou (1)P. K. L. Yu (2) N.D. Stojadinovic (1) M. Ostling (2)

D.L. Pulfrey (2)

Number in parenthesis represents term.* Members elected 12/02

2

Electron Devices Society EDS Educational Activities Committee Report

EDS Educational Activities Committee Report

The main objectives of the Educational Activi-ties Committee are to provide opportunities andthe forum for members to expand their knowl-edge of our technical fields. The Committee alsoseeks to provide opportunities for the Society toattract new members and to assist in promotingstudent activities. The activities developed for theyear 2003 reflect these objectives. The Commit-tee’s current membership strength is seventeen,

and its members are appointed by the President to reflect the world-wide geographical spread of the Society. The Chair is IlesanmiAdesida of the University of Illinois at Urbana-Champaign, USA andthe other members are K.S. Chari (Electronics Niketan, India); JamalDeen (Universite Loustpeueer II, Montepellier, France); Magali. Estra-da del Cueto (CINVESTAV-IPN, Mexico); Yoshiaki Hagiwara (SonyCorporation, Japan); Gary Harris (Howard Univ., USA); W. Mar-garet Huang (Motorola, USA); Erin Jones (Oregon State University,USA); Kevin T. Kornegay (Cornell University, USA); Kei-May Lau(Hong Kong University of Science & Technology, Hong Kong); LedaLunardi (Consultant, USA); Kwyro Lee (KAIST, Korea); Stephen. A.Parke (Boise State University, USA); Jayasimha S. Prasad (MicrelSemiconductor Inc., USA); Marcel. D. Profirescu (Technical Universityof Bucharest, Romania), Arlene A. Santos (National SemiconductorCorp, USA); Sunit Tyagi (Intel, USA); and Philip Wong (IBM, USA).The committee physically meets twice a year during the Spring andFall AdCom meetings. Businesses are conducted via various commu-nication means in between the two meetings.

One of the functions of the Committee is to maintain avibrant Distinguished Lecturer (DL) Program for the Society. TheDL Program exists for the purpose of providing EDS chapterswith a list of quality lecturers who can potentially give talks atlocal chapter meetings and other occasions. In 1994, the DLProgram was revamped to include more lecturers from aroundthe world. Since then, the number of lectures performed forIEEE Sections/Chapters has more than tripled, with a count of107 for the year of 2002. The listing of Distinguished Lecturersalong with their topics and travel schedules is maintained athttp://www.ieee.org/organizations/society/eds/dl.html. Thelisting is reviewed yearly and to remain on the roster, a Distin-guished Lecturer must actively perform lectures.

To arrange for a lecture, the EDS chapters should contactthe EDS DL directly. A general guideline for the visit, but notthe absolute rule, is that the lecturer should be able to includethe meeting site with an already planned travel schedule at asmall incremental cost to the travel plan. Alternatively, a priorcoincident travel plan would not be required if the lecturer isalready located within an approximate fifty mile radius of a

Ilesanmi Adesida

(continued on page 5)

July 2003 ❍ IEEE Electron Devices Society Newsletter

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2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

The 2003 International Confer-ence on Simulation of Semiconduc-tor Processes and Devices (SISPAD2003) will be held on September 3-5, 2003, at the Boston MarriottCambridge Hotel in Cambridge,Massachusetts. In conjunction withSISPAD, a one-day strained siliconMOSFET modeling workshop will beheld on Saturday, September 6th onthe neighboring MIT campus.

SISPAD 2003, sponsored bythe Electron Devices Society, pro-vides an opportunity for the presentationand discussion of advances in the simu-lation of semiconductor devices, process-es and processing equipment. Theprogram consists of 20-minute oral pre-sentations, with ample time for questionsand answers. In addition, a poster ses-sion is planned, which provides a lessformal venue and allows more in-depthinteraction with the authors.

Paper topics may include:•All aspects of device simulation, includ-

ing transport in nano-structures, models of VLSI device scaling limits, quantum effects, and novel devices

•All aspects of process simulation, including both continuum and atomistic approaches

•Equipment, topography, and lithography simulation

•Interconnect modeling and algorithms•Compact device modeling for circuit

simulation; integration of circuit and device simulation

•User interfaces and visualization•High performance computing,

numerical methods and algorithms, including gridding

•Simulations of such devices as micro sensors, microactuators, optoelectronics devices, lasers, and flat panel displays

•Benchmarking, calibration, and verification of simulators

Along with the contributed papers, theSISPAD 2003 program will feature anexciting selection of invited speakers. A

partial list includes: Narain Arora(Cadence); Olaf Schenk (University ofBasel); Ken Uchida (Toshiba); MichaelAziz (Harvard University); Craig Lent(Notre Dame); Arne Nylandsted Larsen(University of Aarhus); and Young JunePark (Seoul National University).

The SISPAD conference is truly interna-tional, rotating between sites in NorthAmerica, Europe, and Asia. Submissionsrange from the theoretical to the practical;from cutting edge advances in transporttheory and materials science, to industrialapplications of simulation and optimiza-tion. Attendees will have the opportunity tointeract with worldwide leaders in TCADresearch and development. The confer-ence organizers strive to maintain an inti-mate conference (typical attendance is150-200 people) with plenty of opportuni-ties for informal discussion.

The one-day strained silicon-modelingworkshop, which follows SISPAD, will takeplace on Saturday, September 6th on theMIT campus, which is within walking dis-tance from the Marriott Hotel. The work-shop is entitled “Modeling and SimulationIssues in Strained Si MOSFETs” and isbeing co-organized by Judy Hoyt andDimitri Antoniadis of MIT. The workshopwill begin with introductory overviewshighlighting the basics of strainedSi/relaxed SiGe materials and devicetechnology. These reviews will be fol-lowed by a series of talks on strained sili-con modeling and simulation issues

including: modeling of carrier trans-port in strained Si, the impact ofstrain and energy bands on perfor-mance scaling (Ion/Ioff) of strainedSi MOSFETs, theory of strain relax-ation and defects in strained Si andrelaxed SiGe, process modeling(e.g. dopant and Ge diffusion),stress modeling in complex devicestructures, and device self-heating.

The SISPAD conference dinnerwill take place at the Boston Museumof Science, which has a long history

of presenting innovations in science andtechnology to the public. The main hallwill be reserved for the exclusive use ofSISPAD attendees, who will be able tostroll through the interactive exhibits dur-ing the reception and after dinner.

The conference site is located in Cam-bridge, the home of MIT and Harvard Uni-versity, and just across the Charles Riverfrom Boston. The Boston area is an impor-tant cultural and academic center with ahistory that stretches back to the earliestdays of the United States. There are awide variety of attractions for the visitor,including historical sites, the nearbyseashore, world-class museums, as well asrestaurants and cafes of all types. Masstransit makes it easy to get around the citywithout a car.

For general information on SISPAD2003 or the Strained Silicon-ModelingWorkshop, please view our web site athttp://www-tcad.stanford.edu/sispad03.If you require additional information onthe conference or the one-day workshop,please contact the SISPAD 2003 Confer-ence Manager, Ms. Fely Barrera, CISX332, Stanford University, Stanford, CA,94305 USA. TEL: +1 650 723-1349;FAX: +1 650 725 7731; E-Mail:[email protected].

Paco LeonM.T. Associates

Palo Alto, CA, USA

Upcoming Technical MeetingsUpcoming Technical Meetings

2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

The International Symposiumon Semiconductor Manufacturing(ISSM) is a world-wide forumspecifically designed for semicon-ductor device manufacturers andsuppliers. ISSM 2003 will beheld Tuesday, September 30 –Thursday, October 2 at the SanJose, CA Fairmont Hotel.

Created more than a decadeago by key corporate execu-tives, ISSM places an emphasison sharing industrial experi-ences, technical solutions andopinions on the advancement ofmanufacturing science. ISSMhas developed into one of themost respected and well-attend-ed conferences in the industry.Now celebrating i ts twelf thanniversary, ISSM has a stellarconference planned for 2003.

Recognizing that manufacturing exper-tise is a cornerstone to corporate success,ISSM places a high priority on relevance,significance and applicability to waferfabrication. Additionally, plenary presen-tations provide opportunities for present-ing broad visions and outlining keychallenges facing the industry.

This year’s event covers timely andimportant topics like Factory Design;Manufacturing Strategy and Structure;Ultra Clean Technology; Process andMetrology Equipment; Process MaterialsOptimization; Environment, Safety andHealth; Manufacturing Control and Execu-tion; Process Control and Monitoring; andYield Enhancement.

As an international conference, ISSMseeks the best talent from around theworld. As many as fifty companies from fif-teen countries are represented in a typicalyear. Conference presenters include manu-facturing professionals, engineers, andmanagers from semiconductor, equipment,and materials companies as well as acade-mic experts from universities and research

organizations. Thus, attendees areexposed to the latest technical information.

Each day is introduced with keynoteaddresses from renowned industry lead-ers. Last year’s star-studded roster includedCraig Barrett from Intel, Morris Changfrom Taiwan Semiconductor Corporation,D.J. Dunn from ASML, Koichi Nagasawafrom the Japanese Electronics and Informa-tion Technology Industries Association,Hector Ruiz from Advanced MicroDevices, and Ken Schroeder from KLA-Ten-cor. This year’s speakers are certain topresent analyses, strategies and demon-strations as they reveal their perspectivesto an attentive and rapt audience.

Prospective authors are required to e-mail a two-page abstract that includes tech-nical figures. To ensure high quality,abstracts are thoroughly and comprehen-sively peer reviewed by ISSM’s internation-al technical committees. Once accepted,authors work with a coach to complete theirpaper according to ISSM and IEEE guide-lines. All papers are published in the con-ference proceedings. Oral presentations

are projected electronically at theconference and poster papers arepresented in a highly interactive ses-sion. The formal Call for Papers,submission templates and otherguidelines can be found at the ISSMweb site: http://www.issm.com.The deadline for submitting anabstract is Friday, May 2, 2003.

In addition to the oral andinteractive technical presenta-tions, there will also be two sepa-rate workshops on Monday,September 29, which will focuson topics timely for our industry.

ISSM 2003 will be held at theFairmont Hotel in San Jose, Cali-fornia. Located in the heart of Sili-con Valley, the area offers a widevariety of interests to those visitingfrom out of state or out of the coun-try. Extended time can be spent in

San Francisco, the Napa Valley winecountry, Lake Tahoe, Yosemite NationalPark or the charming seaside towns ofCarmel and Monterey.

Online conference registration andhotel information will be available on theISSM web site in mid-July.

For registration or general informationabout ISSM, please visit our web site athttp://www.issm.com, or contact AudreyOsborn at ISSM, c/o Maritz Travel Co,1777 Botelho Dr., Suite 100, WalnutCreek, CA 94596, Phone: 925-287-5315, FAX: 925-287-5398, e-mail:[email protected].

IEEE (Electron Devices Society andComponents, Packaging and Manufactur-ing Technology Society), Society ofApplied Physics of Japan (JSAP), andSemiconductor Equipment & MaterialsInternational (SEMI) sponsor ISSM.

Bruce SohnIntel

Rio Rancho, NM, USA


4

2003 IEEE International Symposium on SemiconductorManufacturing (ISSM)

2003 IEEE International Symposium on SemiconductorManufacturing (ISSM)

ASIC, low power, high-voltage, RF, ana-log, Mixed mode, etc.)

•Double Gate/Vertical Channel Structures; Other Novel Structures

•Strained Si-Ge structures •New SOI structures, Circuits, and appli-

cations (3-D integration, displays, microactuators - MEMS, microsensors, Drop-in RAMS, etc.)

•SOI reliability issues (hot-carrier effects, radi-ation effects, high-temperature effects, etc.)

•Manufacturability and process integration

of SOI devices and circuits•Alternate silicon-on-insulator material.

Abstracts for the SOI 2003 Confer-ence should be submitted no later thanMay 2, 2003 to: c/o BACM, 520 Wash-ington Blvd., #350, Marina del Rey, CA90292 by mail or by e-mail to:[email protected] in PDF format. Latenewspapers with exceptional merit will beconsidered for the Late News session ifsubmitted on or before August 15, 2003.

Once again, the popular One-Day Tutor-ial Short Course will be offered preceding

the 2003 SOI International Conference.Tutorial Short Course instructors have manyyears of experience in the field of silicon-on-insulator technology. The course is intendedto educate attendees in detail about currenttrends and issues in the SOI industry. TheSOI 2003 Tutorial Short Course will focuson "physics-based design of SOI devices" tobe given by Dr. J. Koga (Toshiba), Dr. J.Hoyt (MIT), Prof. M. Lundstrom (Purdue),and Dr. D. Frank (IBM). Participants willreceive copies of all visual presentations.

The SOI Conference is held annually

2003 IEEE International SOI Conference (continued from page 1)2003 IEEE International SOI Conference


5

The 30th InternationalSymposium on CompoundSemiconductors (ISCS) willbe held at the University ofCalifornia, San Diego, CAAugust 25–27, 2003. Thelocation of this Symposiumrotates between Asia,Europe, and the UnitedStates. Last year the Sympo-sium was held in Lausanne,Switzerland and the last timeit was held in the UnitedStates in 2000 it was held inMonterey, CA,

The 30th ISCS will contin-ue a series started in Reading, England in1966. The first 20 symposia were heldunder the name Symposium on GaAs andRelated Compounds. The current namereflects a broadening of the conferencescope because of the emergence of awide variety of compound semiconductorsas vital materials for modern electronicand optoelectronic devices. As compoundsemiconductors continue to grow in impor-tance in the commercial marketplace,ISCS provides a unique opportunity forresearchers from industry and academiato gather and explore issues that are com-mon among all compound semiconductormaterial systems, including materials syn-thesis, characterization, device designand processing, and applications.

The University of California at SanDiego is a beautiful setting for ISCS.Since the Symposium is held when class-es are not in session, the dormitories areavailable for attendees. The use of thedormitories will make it possible formore graduate students to attend the

symposium, and other attendees whodesire to lower the cost of attendance.The casual atmosphere of holding thesymposium on a college campus, alongwith a majority of the participants stay-ing on campus, leads to a workshop-type environment with a real openexchange of results and ideas.

The conference includes oral andposter sessions of contributed papers,and invited papers on topics of currentimportance. The following is a partial listof the invited speakers:

Rob Beresford, Brown University,“Real-Time Studies of Strain Relaxation inInGaAs Heteroepitaxy”

Pallab Bhattacharya, University ofMichigan, "Photonic Crystals”

Steve J. Pearton, University of Florida,“GaN Based Spintronics”

Rich Magno, NRL, “High-speed low-power Sb-based HEMTs and HBTs”

Haipeng Tang (National ResearchCouncil, Canada),”High frequency

GaN/AlGaN HFETs”Cole Litton (Air Force Research Labs) “P-

doping of ZnO”Toshio Nishida, NTT,

“Nitride UV Emitters”Keiichi Sakuno, Sharp Cor-

poration “Advanced GaAs HBTTechnology for 5GHz PowerAmplifiers”

Primit Parikh, Cree Lighting,“Advances in GaN HFETs”

Keisuke Shinohara, FujitsuLaboratories, “HEMTs withUltrahigh Cutoff Frequency”

There are three majorawards associated with ISCS.The first is the Heinrich WelkerAward, which went to Professor

Hiroyuki Sakaki, University of Tokyo in2002 for fundamental contributions tothe study of semiconductor quantum (het-ero) structures. The second award is theQuantum Devices Award, which went toProfessor Yasuhiro Arakawa, Universityof Tokyo in 2002 for pioneering contri-butions to the development of quantumdot and quantum wire lasers. The thirdaward is the Compound SemiconductorSymposium Young Scientist Award,which went to Professor Diana Huffaker,University of New Mexico in 2002 forseminal contributions to the developmentof oxide-confined vertical cavity lasersand 1,3 mm GaAs-based quantum dotlasers.

For more information, please seethe symposium web si te at http://www.ieee.org/organizations/society/leos/LEOSCONF/ISCS2003/iscs03.htm

Michael MellochPurdue University

West Lafayette, IN, USA

2003 IEEE International Symposium on CompoundSemiconductors (ISCS)

2003 IEEE International Symposium on CompoundSemiconductors (ISCS)

meeting site. Although the concept ofthe program is to have the lecturers min-imize travel costs by combining their vis-its with planned business trips, EDS willhelp subsidize lecturers’ travel in caseswhere few/no lecturers will be visitingan area and/or a chapter cannot payfor all the expenses for a lecturer trip.

The Committee is also encouraging Dis-tinguished Lecturer clusters/mini-colloquia(Travel link Road Show) to remote areas.This concept generally involves the sendingof about 2 or more DLs to travel to aregion/chapter and present the latest devel-opments in a particular field. The chap-ters/regions would be responsible for

handling all the arrangements of the eventand only minimal financial support wouldbe required of EDS and could be coveredby the DL Program budget upon request. Asuccessful mini-colloquia was organized inChina last year with six lecturers travelingand presenting lectures in four cities (Nan-jing, Shanghai, Xi-an and Beijing). This

EDS Educational Activities Committee Report(continued from page 2)

EDS Educational Activities Committee Report


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2003 IEEE International SOI Conference (continued from page 4)

throughout the United States. This year’sconference is being held at NewportBeach Marriott Hotel & Tennis Club,Newport Beach, California. An advisoryboard and a technical committee, com-prised of members from the societythroughout the world, guide the confer-ence. The 2003 advisory board mem-bers are Dimitris Ioannou (GeorgeMason U), Harold Hovel (IBM), JasonWoo (UCLA), and Ted Houston (TI). The2003 conference is organized by: Gen-eral Chair, Mike Liu (Honeywell), Techni-cal Program Chair, Mike Mendicino(Motorola); Local Arrangements Chair,James Burns (MIT/Lincoln Lab); Treasurerand Registration Chair, Chris Tretz;Rump and Poster Chair, Pierre Fazan(LEG/EPFL); and Short Course Chair,Toshiro Hiramoto (University of Tokyo);Publicity Chair, Rajiv Joshi (IBM); andtechnical committee members, OlivierFanot (CEA-LETI), Fari Assaderaghi (Sili-con Wave), George Cel lar(SOITEC/USA), Jean-Pierre Colinge (UCDavis), Paul Fechner (Honeywell ) ,William Jenkins (NRL), Shigeru Kawana-ka (Toshiba), Daniel Radack (DARPA),Hector Sanchez (Motorola), Sunit Tyagi(Intel), Rene Zingg (Phillips), GerryNeudeck (Purdue), James Kuo (NTU),Atsushi Ogura (NEC), and Car losMazure (SOITEC).

The Newport Beach Marriott Hotel isdesigned to allow the perfect blend ofwork, rest and recreation. Excellent meet-

ing facilities designed to compliment anyconference, comfortable guestrooms dec-orated with an American folk art theme,and an amazing array of recreationalopportunities in the immediate area arethe key features of the hotel.

Located midway between Los Angelesand San Diego, the Newport Beach Mar-riott (www.marriott.com/laxnb) offers thebest balance of business and resort facili-ties with the friendliness & warmth that ischaracteristic of Marriott. The hotel'smeeting facilities can accommodate meet-ings from 5 to 1,000. Whether travelingfor business or pleasure, the NewportBeach Marriott Hotel and Tennis Club willmake your stay a memorable one.

Overlooking the harbor and beyond tothe ocean, the hotel boasts an accommo-dating location only 10 minutes from theJohn Wayne airport. Their tennis cluboffers 8-lighted courts with a staff of tennispros available for lessons. There are manynearby challenging golf courses, side tripsto Disneyland, Knott’s Berry Park, orCatalina Island are available. Just relax inthe whirlpool or take a refreshing swim inthe pool. A complimentary shuttle serviceto the hotel from the John Wayne airportis provided. If you fly into Los AngelesInternational Airport, ground transporta-tion is available, which includes regularlyscheduled airport bus service, taxis, rentalcars and shuttle vans.

Newport Beach is so rich in wonder-ful things to see and do that you couldspend weeks here and still not manageto do and see them all. That said, howev-er, it's also true that the area immediate-ly surrounding the ci ty is ful l ofattractions well worth exploring - andthat Newport Beach is centrally locatednear every major visitor attraction inSouthern California, making this a singu-larly convenient spot from which to expe-rience all of the attractions that the entireregion has to offer. Various art galleries,islands, Disney world, Universal studio,and museums are within the driving dis-tance. For more information about thearea you can call the Newport BeachConference and Visitors’ Bureau at (800)942-6278 or visi t their web si te:www.newportbeach-cvb.com. You canfax them at (949) 722-1612 or write tothem at 3300, W. Pacific Coast High-way, Newport Beach, CA – 92663.

You may contact the 2003 IEEE Interna-tional SOI Conference for additional infor-mation as follows: c/o BACM, 520Washington Blvd., #350, Marina del Rey,CA 90292, Tel: 310-305-7885; Fax:310-305-1038; Email: [email protected] the SOI Conference websi te athttp://www.soiconference.org.

Rajiv JoshiTJ Watson Research Center

Yorktown Heights, NY, USA

year, a mini-colloquia is being held – inBrazil along with commemorations of the50th year anniversary of the Society. Pro-fessor Jacobus Swart, the Chair of the localEDS Chapter, will host the next mini-collo-quium in Brazil in September.

Reports on the DL Program are present-ed frequently in this magazine. For moreinformation, please contact Laura Riello ofthe EDS Executive Office ([email protected]).Feedbacks are actively solicited on the pro-gram from chapter chairs and members ofthe society.

A Graduate Student Fellowships Pro-gram (GSFP) was established in 2000under the auspices of the Committee. ArleneSantos ably chaired the Sub-Committee han-dling the GSFP until the end of 2002. Withher assuming other duties within the Society,the Sub-Committee is now chaired byStephen Parke. The Society made its firstAwards to three students from around theworld in 2001. Since then the program hasprogressed, and four Awards were madelast year with formal presentations made atthe 2002 IEDM is San Francisco. The 2002Awards went to David M. Fried of CornellUniversity, Ithaca, NY, USA; Jack Chen of

the University of Illinois at Urbana-Cham-paign, Urbana, IL, USA, Ofir Degani of theTechnion-Israel Institute of Israel, Haifa,Israel; and Yung Fu Chong of The NationalUniversity of Singapore, The Republic of Sin-gapore. Reports on these winners are pub-lished in this edition of the Magazine.Advertisement for the next competition withthe qualifications required and the renumer-ations are published in this Newsletter andother EDS publications. I am appealing toall our members to advertise the programamong potential candidates and nominatorsso that students are aware of this opportu-nity for funding and recognition. Withthese awards, we hope to assist the verybest students in our fields and also to makea positive impact on the future leaders ofour Society.

Still in the spirit of recognition foryoung engineers, we br ing to thenotice of our membership the IEEE KiyoTomiyasu Award for “outstanding earlyto mid-career contributions to technolo-gies holding the promise of innovativeapplications.” This is a relatively newIEEE Technical Field Award; if youhave suitable candidates, please con-

tact the Awards Chair of our Society,Al Mac Rae ([email protected]).

The Educational Activities Committee isrevamping the Short Course Program ofthe Society with emphasis being directedat providing a service to industry. A list ofa limited number of hot topics are beingdeveloped by Philip Wong (and somecommittee members) with the aid of ourTechnical Committees along with corre-sponding lecturers (by consent) from theSociety. A flyer is being prepared for distri-bution to industry on these topics with themode of operation being that interestedparties will contact the lecturers directlyand arrange to sponsor such short courses.Interested chapters can co-sponsor shortcourses with industry at their expense. Thisnew mode of operation relieves some bur-den from the Executive Office.

If you have any suggestions or informa-tion on our current activities or other activi-ties that you may want us to engage in,please contact me at [email protected].

Ilesanmi AdesidaUniversity of Illinois at Urbana-Champaign

Urbana, IL, USA

2003 IEEE International SOI Conference


7

On 7 December 2002, the EDSAdCom held its annual election of officersand members-at-large. The following arethe results of the election and brief biogra-phies of the members-at-large.

OFFICERSThe following individuals were re-electedfor a one-year term beginning 1/1/2003:

President: Steven J. Hillenius,Agere SystemsVice President: Hiroshi Iwai, Tokyo Institute of TechnologyTreasurer: Paul K.L. Yu,University of California at San DiegoSecretary: John K. Lowell, Consultant

ADCOM MEMBERS-AT-LARGEA total of eight persons were elected to

three-year terms (2003-2005) as mem-bers-at-large of the EDS AdCom. Six of theeight individuals were re-elected for a sec-ond term, while the other two were first-term electees. The backgrounds of theelectees span a wide range of profession-al and technical interests.

SECOND TERM ELECTEES:

COR L. CLAEYS wasborn in Antwerp, Bel-gium. He received theElectrical-MechanicalEngineering and thePh.D. degree from theKU Leuven, Belgium.From 1974 till 1984he was respectively

research assistant and staff member of theESAT Laboratory (KU Leuven). In 1984, hejoined IMEC as Head of Silicon Process-ing, responsible for process developmentand applications in CCDs, CMOS, nonvolatile memories, SOI-CMOS and BiC-MOS. Since 1990 he is Head of the groupon Radiation Effects, Cryogenic Electronicsand Noise Studies. Furthermore, since1990 he is a Professor at the KU Leuven.

His main interests are in device physics,low temperature electronics, radiationphysics, submicron silicon technologies,and defect engineering. He is author or co-author of over 500 publications in scientif-ic journals, eight book chapters, and over400 presentations at international confer-ences. He co-edited a book on “Low Tem-perature Electronics” and wrote one on“Radiation Effects in Advanced Semicon-ductor Materials and Devices”. He is aSenior Member of IEEE and a Fellow of theElectrochemical Society. In 1999, he waselected as Academician and Professor ofthe International Information Academy. Heis an Associate Editor of Journal of theElectrochemical Society. He was thefounder of the IEEE Electron DevicesBenelux Chapter, ED Chapter coordinatorfor Region 8 and Chairman of the IEEEBenelux Section.

JAMES A. DAYTON,JR. BSEE, Illinois Insti-tute of Technology;MSEE, University ofIowa; PhD, Universityof I l l inois. CornellAeronautical Lab, Buf-falo, NY, 1965-1967;plasma diagnostics.

NASA Lewis Research Center, Cleveland,OH, 1967-1998; researcher and supervi-sor in the area of efficiency enhancementof the traveling wave tube (TWT) with par-ticular emphasis on computer modeling;developed TWTs for Mars Observer andCassini. Hughes (Boeing) Electron Dynam-ics, Torrance, CA, 1998-2001; Directorof Technology; developed TWTs for com-munications satellites. Genvac Aerospace,Cleveland, OH, 2001-present; Director ofTechnology; application of CVD diamondto millimeter and sub millimeter vacuumdevices. Working Group A of the DoDAdvisory Group on Electron Devices,1986-1998. Editor for Vacuum Devices,Transactions on Electron Devices, 1994-1999. Chair, EDS Technical Committeefor Vacuum Devices, 1997-present. EDSAdCom, 2000-present. General Chair,

first International Vacuum Electronics Con-ference, May 2000. Robert L. WoodsAward for leadership in vacuum electron-ics technology, Undersecretary ofDefense, May 2000.

MASAO FUKUMAreceived the B.E., M.E.and Ph.D. degrees inInstrumentation Engi-neering from Keio Uni-versity, Yokohama,Japan in 1972, 1974and 1986, respective-ly. In 1974, he joined

NEC Central Res. Labs., where he workedon scaled down MOSFETs, TCAD andCMOS logic LSIs. Since 2001, he hasbeen Vice President of NEC Laboratories,NEC Corp., where he is managingresearch and development on advancedelectron devices including silicon VLSIsand compound semiconductor devices. Dr. Fukuma has filled various profession-al committee posts such as the Chair-man of the VLSI Technology Symposiumand an Editor of IEEE Transactions onElectron Devices.

KWYRO LEE receivedthe B.S. Degree in Elec-tronics Engineeringfrom Seoul NationalUniversity in 1976 andthe M.S. and Ph.D.degrees from the Uni-versity of Minnesota,Minneapolis in 1979

and 1983, respectively. After graduation,he worked as an Engineering GeneralManager in GoldStar Semiconductor Inc.Korea, from 1983 to 1986. In 1987, hejoined the Department of Electrical Engi-neering, KAIST, where he is now a Profes-sor. He has been working as the Director ofMICROS (Micro Information and Communi-cation Remote-object Oriented Systems)Research Center since 1997. His researchinterests are focused on RF and basebanddevice and circuit technologies for mobilemultimedia. He is a Senior Member of IEEEand a Life Member of IEEK.

Announcement of Newly Elected EDS AdCom Members

Society NewsSociety News

Announcement of Newly Elected EDS AdCom Members


8

MIKAEL OSTLINGreceived the MScdegree in engineeringphysics and the PhDdegree from UppsalaUniversi ty in 1980and 1983, respective-ly. He has been withthe faculty of EE ofKTH, Royal Institute of

Technology in Stockholm, Sweden since1984 where he is head of the departmentof microelectronics and information tech-nology and holds a position as professorin solid state electronics. He has been asenior visiting Fulbright Scholar with thecenter for integrated systems at StanfordUniversity, and a visiting professor withthe University of Florida, Gainesville. Hisresearch interests are silicon/silicon ger-manium devices and process technologyfor very high frequency, as well asdevice technology for wide bandgapsemiconductors with special emphasison silicon carbide and nitride basedstructures.IEEE activities include being ED SwedenChapter Chair, former EDS Newsletter Edi-tor, SRC Coordinator in Region 8, andBCTM Executive Committee Member.

DAVID L. PULFREYreceived the B.Sc. andPh.D. degrees in electri-cal engineering from theUniversity of Manchester,England in 1965 and1968, respectively.Since 1968 he has beenon the faculty in the Elec-trical Engineering Depart-

ment at the University of British Columbia,Vancouver, B.C., Canada; he was the inau-gural winner of UBC's Teaching Prize forEngineering in 1990. He is the author of “Photovoltaic PowerGeneration” (Van Nostrand Reinhold,1979), and, with G. Tarr, “Introductionto Microelectronic Devices” (Prentice-Hall, 1989). His research area is semi-conductor device modeling, presentlywith emphasis on compact models forhigh-performance HBTs. He has pub-lished over 100 papers on the topics of:electrical breakdown in thin dielectrics;the preparation and properties of plas-ma-anodized thin oxide films; the analy-sis and fabrication of Si MIS tunneljunction structures, GaAs-based HBTs,quantum-well lasers and GaN-basedHBTs and photodetectors.He was elected Fellow IEEE in 2000 for con-tributions to the modeling of heterojunctionbipolar semiconductor devices.

FIRST-TIME ELECTEES:

FRANCISCO J.GARCIA-SANCHEZwas born in 1947 inMadrid. He receivedhis Ph.D. degree in1976 from theCatholic University ofAmerica, WashingtonD.C. Since then he hasbeen with the Depart-

ment of Electronics at Universidad SimónBolívar in Venezuela. Throughout hisprofessional l i fe he has been veryactive locally and internationally in the

promotion, planning, organization,direction, and administration of numer-ous higher education and researchrelated endeavors. His main presentresearch interest is compact modeling.He is currently the Vice-Chair of theEDS Subcommi t t ee fo r Reg ions &Chapters for Latin America, and chairsIEEE-Venezuela CAS/ED/PEL Join tChapter.

JUIN J. LIOU received the B.S. (honors),M.S., and Ph.D. degrees in electrical engi-neering from the University of Florida,Gainesville, in 1982, 1983, and 1987,respectively. In 1987, he joined the Depart-ment of Electrical and Computer Engineer-ing at the University of Central Florida,Orlando, Florida, where he is now a Pro-fessor. Dr. Liou has published six textbooks(another in progress), more than 180 jour-nal papers (including 11 invited articles),and more than 130 papers (including 35keynote or invited papers) in internationaland national conference proceedings. Hehas been awarded more than $4.0 millionof research grants, and he is an associateeditor for the Simulation Journal and aregional editor for the Microelectronics Reli-ability. Dr. Liou received ten differentawards on excellence in teaching andresearch from the University of Central Flori-da and two different awards from the IEEEElectron Device Society. Dr. Liou is an IEEEEDS Distinguished Lecturer, an IEEE EDSAdministrative Committee Member, and aSenior Member of the IEEE.

Cary Y. YangSanta Clara UniversitySanta Clara, CA, USA

This award is namedin honor of William R.Cherry, a founder of thephotovoltaic community,and was instituted in1980, shortly after hisdeath. The purpose ofthe award, which is pre-sented at each Photo-voltaic SpecialistsConference (PVSC), is torecognize engineers

and scientists who have made significantcontributions to the science and/or technolo-gy of PV energy conversion, with dissemina-tion by substantial publications andpresentations. The William R. Cherry awardwas presented to Dr. Ajeet Rohatgi at the30th PVSC which was incorporated into the3rd World Photovoltaic Solar Energy Confer-

ence held in Osaka, Japan, during the weekof May 12th.

Dr. Ajeet Rohatgi received the B.S.T.(E.E.)degree from the Indian Institute of Technolo-gy in 1971, the M.S.(Materials Engineering)degree from the Virginia Polytechnic Instituteand State University in 1973, and the Ph.D.(Metallurgy and Materials Science) degreefrom Lehigh University in 1977. He was aFellow Engineer for the WestinghouseResearch and Development Center, Pitts-burgh. He worked on impurity effects on sili-con solar cells, on semiconductor and devicecharacterization, on impurity-induced recom-bination centers in semiconductors by deeplevel transient spectroscopy, in design andfabrication of photovoltaic and MOSdevices, on physics and modeling of highefficiency solar cells, and high-energy parti-cle radiation effects on power devices.

Professor Rohatgi's current research inter-ests include modeling, design, fabricationand characterization of high efficiency sili-con solar cells; materials for high perfor-mance photovoltaic and power devices;basic understanding of carrier lifetime limit-ing mechanisms in semiconductors; andmaterials for VLSI circuits.

Dr. Rohatgi is the director of the Universi-ty Center of Excellence for PhotovoltaicResearch and Education (UCEP) at GeorgiaTech. The UCEP is a Department of Energycenter established to advance the science ofphotovoltaic devices and systems, toincrease the availability of education in thearea of photovoltaics, and to improve uni-versity-industry collaboration.

John D. MeakinConsultant

Weybridge, VT, USA

William R. Cherry AwardWilliam R. Cherry Award

Dr. Ajeet Rohatgi


9

In 2000, the IEEE approved the estab-lishment of the Electron Devices SocietyGraduate Student Fellowship Program. TheProgram is designed to promote, recognize,and support graduate level study andresearch within the Electron Devices Soci-ety’s fields of interest: which include: Com-pact Modelling, Compound SemiconductorDevices and Circuits, Device ReliabilityPhysics, Displays, Electronic Materials,Microelectromechanical Systems, Nanotech-nology, Optoelectronic Devices, Photovolta-ic Devices, Power Devices and ICs,Semiconductor Manufacturing, TechnologyComputer-Aided Design, Vacuum Devices,and VLSI Technology and Circuits. In defer-ence to the increasing globalization of ourSociety, at least one fellowship is to beawarded to students in each of three geo-graphical regions: Americas, Europe/Mid-East/Africa, and Asia & Pacific.

In July 2002, EDS announced the win-ners of the Fellowship awards. The fourwinners are: Jack Chen of the Universityof I l l inois at Urbana-Champaign,Urbana, IL, USA, Yung Fu Chong of theNational University of Singapore, TheRepublic of Singapore, Ofir Degani ofTechnion-Israel Institute of Technology,Haifa, Israel and David Michael Fried ofCornell University, Ithaca, New York,USA. The winners are pursuing distinctlydifferent research topics for their doctoraldegrees. The following are brief progressreports written by the award winners.

Jack Chen is a stu-dent in the Depart-ment of Electrical andComputer Engineeringat the University of Illi-nois at Urbana-Cham-paign. His supervisoris Professor Chang Liu.

I am very gratefulto have been awarded the EDS Gradu-ate Fellowship last year and it has beenan honor to be recognized by such aprestigious award. I regret not beingable to attend the award presentationduring the IDEM conference. However,being right up against final exams week

and abstract deadline gave me no timefor a break from scholastic obligations.

Since winning the award, I havewrapped up my research on micro-dis-charge array and published a paper onthat in the October 2002 IEEE Journal ofMEMS. I have continued my research on3-D assembled hot-wire anemometer. Theresults were presented in the ASME Inter-national Mechanical Engineering Con-gress and Exposition in New Orleans lastNovember and published in the April2003 Journal of Aerospace Engineering.

I have also expanded the scope of myresearch in MEMS sensors beyond hot-wire anemometry. I have developed a bio-inspired artificial hair cell sensor withintegrated strain gauge and used it tomeasure air/water flow. The results fromthat research were accepted for an oralpresentation in the upcoming Transducers'03 conference in Boston. We are alsostarting a collaboration to use such sen-sors in an underwater vehicle. With thesame 3-D assembly process, I've alsodeveloped and tested a miniaturizedpirani vacuum gauge. I'm currently finish-ing a paper on that subject. Our researchon 3-D assembled MEMS sensors hasbeen going well and maturing.

The EDS Graduate Fellowship hasbeen very useful to me in that I havebeen able to meet my expenses over thelast year and was able to start an individ-ual investment account using the cashaward. Overall, I’m very thankful for theEDS Graduate Fellowship, beyond themonetary award. I know the prestige ofthe award will help my future career pur-suit and is something I’ll wear as abadge of honor.

Yung Fu Chong isa s tuden t in theDepartment of Electri-ca l and ComputerEngineer ing a t theNational University ofSingapore (NUS), Sin-gapore. His supervi-sors are Assoc ia teProfessor Kin-Leong

Pey and Associate Professor Andrew Wee.

Yung Fu Chong’s research interestsare related to electronic materials andsemiconductor devices, with focus on thefront-end processing of complementarymetal -oxide-semiconductor (CMOS)devices. He has conducted research onthe fabrication of ultra shallow p+/njunctions and self-aligned silicides usinglaser thermal processing (LTP). Laser ther-mal processing of ultra shallow junctionstypically involves the preamorphizationof the silicon surface, followed by themelting of the amorphized regions (andthe substrate) using a pulsed excimerlaser. The extent of dopant diffusion isprimarily controlled by the melt depthand due to the near-zero thermal budgetof the LTP; an extremely high degree ofdopant activation is achieved uponrecrystallization. In the formation of ultrashallow junctions, he has also addressedthe issue on the transient enhanced diffu-sion (TED) of boron during a post-LTPrapid thermal anneal. His research onthe LTP of ultra shallow junctions requiresa sound knowledge of the fundamentalsof laser-solid interactions, as well as thedefect formation and annihi lat ionprocesses during thermal annealing.

Another area of his research relates toalternative gate activation technologies,their process integration issues andimpact on the depletion of carriers at thepolycrystalline silicon (poly-Si) gate/gatedielectric interface (poly-depletion). It isknown that the poly-depletion effectincreases the effective electrical thicknessof the gate dielectric and results in drivecurrent degradation. He has recentlyreported the study on the reduction ofpoly-depletion in sub-0.1 µm CMOSdevices with the use of advanced gatestructures and laser thermal processing.This is a continuation of the work that hecarried out at Agere Systems, USA (for-merly Bell Laboratories, Lucent Technolo-gies), where he spent nearly one year (in2001) as a visiting scholar. He has suc-cessful ly developed a process f low(which involves LTP) to form highly dopedpoly-Si gated MOS devices with ultra thingate dielectrics. It is found that the poly-depletion effect in these devices is sub-

Status Report from the 2002 Graduate Student Fellowship WinnersStatus Report from the 2002 Graduate Student Fellowship Winners

Jack Chen

Yung Fu Chong


10

stantially reduced after subjecting thewafers to laser irradiation, and that thegate oxide reliability is not degradedeven after LTP at high fluencies. Thisprocess flow is applicable to both PMOSand NMOS devices (with boron andarsenic-implanted gates, respectively);hence it is compatible with the dual-doped gate process in the fabrication ofadvanced CMOS devices.

He has authored or co-authored morethan 10 internationally reviewed journalsand conference proceedings. He alsoholds 5 United States patents, with sever-al more pending. In 2002, he receivedthe University Graduate Fellowship awardfrom the National University Singaporefor his outstanding research and academ-ic results. Recently, he delivered a techni-cal presentation at IMEC, Belgium.

Ofir Degani is at thefinal year of his Ph.D.studies at the electricalengineering department,Technion Israel instituteof technology. Hisresearch interests are inthe actuation and sens-ing of motion of micro

machined deformable elements that arethe most basic mechanisms required inmany in Micro-opto-electro-mechanical-sys-tems (MOEMS). Therefore, the understand-ing of the physical phenomena governingthese mechanisms is crucial in the designprocess and operation of MOEMSdevices. His research focuses on two suchmechanisms: electrostatic actuation andan in-plane optical sensing.

An electrostatic actuator is a free-spacecapacitor with deformable electrodes, con-trolled either by applying voltage orcharge. Due to the nonlinear nature of theelectromechanical response of electrostaticactuators, it is often characterized by aninherent instability, referred to as Pull-In.The Pull-In phenomenon is often used toachieve binary operated devices andshould be avoided in analog applications.Therefore, it is crucial to capture the effectof various parameters of the device on thePull-In instability. Several aspects of thePull-In problem have been studied:1) A novel methodology is used to derive

the "voltage-free" equilibrium equa-tions and the general Pull-In equations of electrostatic actuators driven by a single energy source. This approach enables analytical analysis of various geometrical effects (e.g., fringing field, non-linear suspensions, mode cou-pling) on the Pull-In parameters. More-over, using this approach it is proven that charge-controlled electrostatic actuators always have larger travel range than voltage-controlled actuators.

2) A novel Displacement Iterations Pull-In Extraction (DIPIE) algorithm for distributedelectrostatic actuators (e.g., clamped-clamped beam) is constructed. This algorithm is shown to be up to a 100 times faster and far more consistent than the current state of the art voltage iterations algorithm implemented in MEMS-CAD tools.

3) The above methodology is extended to analyze electrostatic actuators driven by K uncoupled voltage sources. The model show that these actuators no longer have a single Pull-In state, but an infinite number of Pull-In states that constitute a K-1 dimensional Pull-In hyper-surface. Furthermore, a novel robust "-lines strategy for extraction of the Pull-In hyper-surfaces was developed.

4) Various electrostatic actuators with singleand multiple electrodes have been implemented and characterized. A novel methodology for measuring Pull-In hyper-surfaces was demonstrated. The measured electro-mechanical response and Pull-In parameters show very good agreement with the theoreticalpredictions.

5) A novel micro mirror device with post-fabrication continuously re-adjustable Pull-In instability was designed and implemented using multiple electrodes technology. This is in contrast to preva-lent electrostatic micro mirrors in which the pull-in instability is set and cannot be changed once the device is fab-ricated.

Sensing of motion in MOEMS is avery challenging task. The sensor shouldbe small in dimensions as well as inpower consumption, and at the sametime, should resolve sub-angstrom dis-

placements. In high-end applications thedisplacement detector should evenresolve sub-pico-meter (10-2[Å/÷Hz])displacements.

In this research a novel method forsensing in-plane displacement ofdeformable elements is developed. Themethod is based on a differential opticalapproach where two arrays of photodi-odes (integrated on a CMOS chip withtheir readout electronics) detect themotion of a matching suspended grid. Amodel for this sensor considering theopto-mechanical model as well as thenoise sources of the system was derived.The model predicts that using this methoda sub-pico-meter (10-2[Å/÷Hz]) displace-ment can be resolved. This is in contrastto the previously studied opticalapproach which used only two photodi-odes and was limited to >0.5[Å/÷Hz].

To this end, an accelerometer employ-ing this optical sensing method wasimplemented. Preliminary measurementsexhibi ted a total noise level of~2[_g/÷Hz] with a natural frequency of~500[Hz]. This indicates that the totalnoise equivalent displacement is~10[mÅ/÷Hz]. Further experimentalwork on improved designs is currentlycarried out.

Ofir has authored or co-authoredmore than 40 journal and internationalconference papers, 1 patent and 4patents pending. He is the recipient ofthe prestigious Charles Clore scholarshipas well as the VATAT scholarship.

David MichaelFried Advanced IntegratedMicrosystems (AIMS)Research Group

Since receiv ingthe Electron DevicesSociety Graduate Stu-dent Fe l lowship, I

have completed one fu l l processsequence and I am nearing the comple-tion of my second process sequencefabricating N-Type Independent GateFinFET devices. The results from the firstset of devices show the correct function-al behavior for a double gate device.These results have been submitted for

Ofir Degani

David Michael Fried


11

consideration to the Device ResearchConference (DRC). Several processimprovements have been made for thesecond sequence in an at tempt toimprove upon the results of the first run.These process improvements will notonly improve the electrical behavior ofthe devices, but also allow for furtherprocessing including CMOS integration.In the coming months, I will be complet-ing process runs to produce P-Type Inde-pendent Gate FinFETs and to attemptCMOS integration for Independent GateFinFET circuit applications.

I have also ported a double-gate com-pact model into a SPICE environment toallow for circuit design using a modelthat approximates the performance ofthe devices I have fabricated and those Iplan to fabricate. I am currently workingon several novel Analog and RF circuitdesigns to leverage the unique qualitiesand performance characteristics of theIndependent Gate FinFET.

The Electron Devices Society Gradu-ate Student Fellowship has provided mewith multiple benefits. By attending theInternational Electron Devices Meeting

in December of 2002 to accept theaward, I was able to gain a larger viewof the research being conducted in Dou-ble Gate devices around the world. Iwas able to meet with many of the dou-ble gate researchers and discuss thecurrent state of their work. This helpedme to improve the focus of my effortshere at Cornell. The award has alsohelped to defray some of my expensesduring my research.

Ilesanmi AdesidaUniversity of Illinois at Urbana-Champaign

Urbana, IL, USA

The Members-at-Large (MAL) of theEDS AdCom are elected for staggeredthree-year terms, with a maximum oftwo consecutive terms. The 1993 Con-stitution and Bylaws changes mandatedincreasing the number of elected MALfrom 18 to 22, and required that therebe at least two members from both IEEERegion 8 (Europe, Mid. East & Africa)and Region 10 (Asia & Pacific). It isalso required that there be at least 1.5candidates for each opening. From2000 to 2002, seven, seven and eightpositions were filled, respectively. In2003, seven positions will be filled.

The election procedure begins with theannouncement and Call For Nominations

in the EDS Newsletter. The slate of nomi-nees is developed by the EDS NominationsCommittee and includes the non-Commit-tee and self-nominations received. Nomi-nees are asked to submit a two-pagebiographical resume in a standard format.Nominations are closed on 15 October,and the biographical resumes are distrib-uted to the 'full' voting members of AdComprior to the December AdCom meeting.The election is then held after the conclu-sion of the meeting. The nominees do notneed to attend the AdCom Meeting/Elec-tion to run. On the other hand, if you areelected, you are expected to attend thetwo AdCom meetings a year. In general,the travel and accommodation costs to

attend these meetings are borne by theelected member.

A continuing flow of new AdCommembers who are interested in workingfor the improvement of the Society andits related technical areas is essentialfor the continued development of EDSand the field of electron devices. Thoseinterested in the field, the Society, andits operations are encouraged to attendAdCom meetings, become involved inSociety activities, and consider runningfor election to AdCom.

Cary Y. YangEDS Nominations & Elections Chair

Santa Clara UniversitySanta Clara, CA, USA

EDS Administrative Committee Election ProcessEDS Administrative Committee Election Process

The Electron Devices Society of theIEEE invites the submission of nomina-tions for election to its AdministrativeCommittee (AdCom). Presently, theAdCom meets twice per year and iscomposed of 22 members. Sevenmembers will be elected this year fora term of three years, and a maxi-mum of two consecut ive terms isallowed. In 2003, the election will beheld after the AdCom meeting on Sun-day, 7 December. Electees begintheir term in off ice on 1 January2004. For your information, the nomi-nees do not need to a t tend theAdCom Meeting/Election to run.

Nominees are being sought to fill theslate of candidates. Nominees may beself-nominated, or may be nominated byanother person; in the latter case, thenominee must have been contacted andhave agreed to serve if elected. Anymember of EDS in good standing is eli-gible to be nominated. As another con-dition for nomination and election, anominee is expected to attend the twoannual AdCom meetings. In general, thetravel and accommodation costs toattend these meetings are borne by theelected member.

Please send your nominee's name,address, and supporting information

to the EDS Executive Office Adminis-trator, Laura J. Riello in time to bereceived by the deadline of 15 Octo-ber 2003. Her contact information isthe same as W.F. Van Der Vort’s,included on page 2. It is very desir-able that submissions include a bio-graphical summary in a standardtwo-page format. The EDS ExecutiveOffice can provide you with an exam-ple of the format. If you have anyquestions regarding the nominationrequirements or process, feel free tocontact the Nominations and ElectionsChair, Cary Y. Yang (see page 2 forcontact information).

Call For Nominations - EDS AdComCall For Nominations - EDS AdCom


12

The EDS Chapter of the Year Award isgiven each year based on the quantity andquality of the activities and programsimplemented by the chapters during theprior July 1st – June 30th period. Nomina-

tions for the award can only be made byChapter Partners, SRC Chairs/Vice-Chairs,or self-nominated by Chapter Chairs.

The winning chapter will receive a cer-tificate and check for $1,000 to be pre-

sented at the International Electron DevicesMeeting (IEDM).

The schedule for the award process is asfollows:

Call for Nominations for the EDS Chapter of the Year Award

The deadline for EDS chapters torequest a subsidy is 1 September 2003.For 2003, the EDS AdCom awardedfunding to 60 chapters, wi th mostamounts pr imari ly ranging f romUS$250 to US$1,000. In June, ChapterChairs were sent an e-mail notifyingthem of the current funding cycle andproviding them with a list of guidelines.In general, activities which are consid-ered fundable include, but are not limit-

ed to, membership promotion travelallowances for invited speakers to chap-ter events, and support for student activi-ties at local institutions. Subsidy requestsshould be sent via e-mail, fax or mail tothe EDS Administrator, Laura J. Riello.Her contact information is the same asW.F. Van Der Vort’s, included on page2. Prior to the submission of the subsidyrequest, the Chapter Chair must submita chapter activity report to its respective

SRC Chair and EDS Newsletter Editorby July 1. This report should include ageneral summary of chapter activities(one to two pages) for the prior July 1st- June 30th period. You must also attacha copy of the activity report to yourchapter subsidy request. Final decisionsconcerning subsidies will be made bythe EDS Regions/Chapters Committee inearly November. Subsidy checks will beissued by late January.

EDS CHAPTER SUBSIDIES FOR 2004

Christopher Saliccoand Gregg Maricondaof the EDS ExecutiveOffice have workeddiligently over thepast year on majorrenovations to theEDS website. Theseimprovements weredesigned to improve

the navigation within the site and to pro-vide additional information that is easilyaccessible to the EDS member.

We have upgraded all the pages tothe new IEEE template. Pages were creat-ed with member contact information forseveral Standing Committees. There isnow a news section for each EDS subject

area, which is linked from their respec-tive home pages. We have successfullyupdated all the EDS DL contact informa-tion and added available abstracts. Allthe EDS Meetings forms are now avail-able on-line or as Word attachmentsupon request.

The EDS Photo Gallery has beenrevised to include the 50th AnniversaryPhotos as a slide show and the MillenniumMedals Luncheon photos have beenrevamped.

In order to ensure that the site con-tains the most current information, wehave come up with a maintenanceschedule, which includes three majorrevisions a year as well as monthlyupdates on information such as meet-

ings calendars and other items that aretoo important to wait until the sched-uled update.

Chris and Gregg are continuing towork on enhancements to the site, includ-ing upgrading the EDS Site map, as wellas new projects that surface.

Come and check out our new look foryourself: http://www.ieee.org/organiza-tions/ society/eds/. We look forward tocomments and suggestions to continuous-ly make our site better.

Arlene A. SantosEDS Web Site Coordinator

National Semiconductor CorporationAnnapolis, MD, USA

EDS Web Site Gets a New Look

Action Date

Call for Nominations E-Mailed to Chapter Chairs, Chapter Partners, SRC Chairs & SRC Vice-Chairs 6/1

Deadline for Nominations 9/15

Regions/Chapters Committee Selects Winner Early-October

Award given to Chapter Representative at IEDM First week of December

Call for Nominations for the EDS Chapter of the Year Award

EDS CHAPTER SUBSIDIES FOR 2004

EDS Web Site Gets a New Look

Arlene A. Santos


13

MICHAEL S. ADLERTel: +1 518 533 2243E-Mail: [email protected]: +1 518 533 2201• Microfuel Cells

VIJAY K. ARORA Tel: +1 570 408 4813/4211E-Mail: [email protected]: +1 570 408 7881• Quantum Engineering of

Nanoelectronic Devices • Integrated-Circuit Engineering• High-Field Effects in Quantum-

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SUPRIYO BANDYOPADHYAYTel: +1 804 827 6275E-Mail: [email protected]: +1 804 828 4269• Quantum Computing • Spintronics• Nanaoelectronics

HERBERT S BENNETTTel: +1 301 975 2079E-Mail: [email protected] Fax: +1 301 948 8069• Carrier Transport and Bandgap

Narrowing in Heavily Doped Compound Semiconductors - Comparison of Theory and Experiments

• Consensus-Based Planning for Compound Semiconductor Technologies (A Technology

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KEVIN F. BRENNANTel: +1 404 894 6767E-Mail: [email protected] Fax: +1 404 894 1256• The Future of Computing Hardware

• Wide Band Gap Semiconductors and Their Impact on Wireless Communications

ARISTOS CHRISTOUTel: +1 301 405 5208E-Mail: [email protected]: +1 301 314 2029• Photonic Materials and Devices:

Reliability and Performance Issues

JOHN D. CRESSLERTel: +1 404 894 5161E-Mail: [email protected]: +1 404 894 4641• Silicon-Germanium Heterojunction

for 21st Century Communications Systems

• Low-Temperature Microelectronics: Opportunities and Challenges

ROBIN M. DAWSONTel: +1 609 734 2954E-Mail: [email protected]: +1 609 734 2873

GARY HARRISTel: +1 202 806 6618E-Mail:[email protected]: N/A

STEVEN J. HILLENIUSTel: +1 610 712 6054E-Mail: [email protected]: +1 610 712 4081• Not One But a Billion ULSI

Technology Manufacturing

AGIS A. ILIADISTel: +1 301 405 3651E-Mail: [email protected]: +1 301 314 9281• Self-Assembled Nanostructures• Wide Band-Gap Semiconductor

Technology• High Power Microwave Effects

on Electronic Devices and Circuits• Optoelectronic Devices

RENUKA P. JINDALTel: +1 337 482 6570E-Mail: [email protected]: +1 337 482 6569• Approaching Fundamental Limits

on Signal Detection: Devices and Principles

• Nano-FET Fluctuation Physics

LUCIAN A. KASPRZAKTel: Not availableE-Mail: [email protected]: Not available• Building in Reliability• ELSI Reliability• Electron Devices in Astronomy• Digital Radiography• What’s your Cosmology?

KEVIN T. KORNEGAYTel: +1 607 255 7612E-Mail: [email protected]: +1 607 254 4565• RF Integrated Circuit DesignUsing SiGe

BiCMOS Technology• MEMS for Harsh Environments• Silicon Carbide CMOS

Technology for High Temperature Applications

MARK E. LAWTel: +1 352 392 6459E-Mail: [email protected]: +1 352 392 8381• Moore’s Law and Materials

Science: Scaling to the Atomic Limit

JUIN J. LIOUTel: +1 407 823 5339E-Mail: [email protected]: +1 407 823 5835• RF/Microwave Semiconductor

Devices: Evolution, Current Status, and Future Trend

• Modeling, Characterization, and Design of Electrostatic Discharge (ESD) Protection Structures for Microchips

• Empirical Modeling of Reliability of RF CMOS Transistors

LEDA LUNARDITel: Not AvailableE-Mail: [email protected] Fax: Not Available• High-Speed Electronics• Semiconductor Devices and

Technologies for Future Telecommunication Systems

• Lightwave Communication Systems: Where is the Electronics?

KWOK K. NGTel: +1 610 712 5479E-Mail: [email protected] Fax: +1 610 712 4081• A Survey of Semiconductor

Devices

TAK H. NINGTel: +1 914 945 2579E-Mail: [email protected]: +1 914 945 3623• SOI BiCMOS - an emerging

technology platform for mixed-signal designs

• Silicon technology -- future trendsfrom a system application perspective

DAVID L. PULFREY Tel: 604 822 3876E-Mail: [email protected]: 604 822 5949• High-Frequency and High-Speed

HBTs• GaN Bipolar Transistors and UV

Photodetectors• Carbon Nanotube FETs

M. AYMAN SHIBIBTel: +1 610 712 1581E-Mail: [email protected]: +1 610 712 1580• Smart Power Technology and

Applications• High Voltage Integrated Circuits• Power Ics in Telecommunications• Dielectric Isolated Integrated Circuits• Silicon-On-Insulator Technologies

and Devices• Reliability Issues in High

Voltage ICs

EDS Distinguished Lecturer Program – Lecturers Residing inEastern USA & Canada (Regions 1-3 & 7)

EDS Distinguished Lecturer Program – Lecturers Residing inEastern USA & Canada (Regions 1-3 & 7)

The EDS Distinguished Lecturer Pro-gram exists for the purpose of providingEDS Chapters with a list of quality lectur-ers who can potentially give talks atlocal chapter meetings. To arrange for alecture, the EDS chapters should contactthe Distinguished Lecturer directly. Ageneral guideline for the visit, but notthe absolute rule, is that the lecturershould be able to include the meeting

site with an already planned travelschedule at a small incremental cost tothe travel plan. Alternatively, a priorcoincident travel plan would not berequired if the lecturer is already locat-ed within an approximate fifty mileradius of a meeting site. Although theconcept of the program is to have thelecturers minimize travel costs by com-bining their visits with planned business

trips, EDS will help subsidize lecturertravel in cases where few/no lecturerswill be visiting an area and/or a chap-ter cannot pay for all the expenses for alecturer trip. For a full listing of EDS Dis-tinguished Lecturers and travel plansplease contact Laura Riello of the EDSExecutive Office (Tel: 1-732-562-3927,Fax: 1-732-235-1626, E-Mail:[email protected]).


14

The 2002 IEEE International ElectronDevices Meeting was held this past yearin San Francisco, CA. The two shortcourses that were offered at this meetingwere titled, “RF Device Technologies forCommunication Systems” and “TheFuture of Semiconductor Manufacturing”.These short courses are now availableon videotape to purchase through IEEECustomer Service.

RF Device Technologies forCommunication SystemsPresented by: Bin Zhao, Skyworks Solu-tions, Newport Beach, CA; Asad Abidi,University of California, Los Angeles,CA; Larry Larson, University of Califor-nia, San Diego, CA; David Harame,IBM, Essex Junc t ion, VT; MichaelSchroter, University of Technology,

Dresden, Germany; Domine Leenaerts,Philips Research Labs, Eindhoven, TheNetherlands

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The Future of SemiconductorManufacturingPresented by: Jack Y.C. Sun, TSMC, Hsin-Chu, Taiwan; C. Rinn Cleavlin, TexasInstruments, Dallas, Texas; N. Kobayashi,SELETE, Tsukuba, Japan; J.J. Lin, TSMC,

Hsin-Chu, Taiwan; P.K. Mozumder, PDFSolutions, Richardson, TX;

Order information:Title: The Future of Semiconductor Manu-facturingNTSC Order No. EV6989 NTSC ISBN 0-7803-7645-5PAL Order No. EV6990 PAL ISBN 0-7803-7646-3IEEE Member Price: $380.00List Price: $450.00

Here's how to place yourorder for the above videos:Telephone: (800) 678-4333 (in the USAor Canada) or (732) 981-0060 Fax: (732) 981-9667Online: http://shop.ieee.org/store/Email: [email protected]

IEDM Short Courses on Videotape

Congratulations to the EDS Members Recently Elected to IEEE Senior Member Grade!Dev AlokJudy AnBruce A. BernhardtManfred Berroth*Dhrubes Biswas*Karl F. BohringerColombo BolognesiBi-Shiou ChiouPierre Fazan

Predrag HabasMiltiadis Hatalis*Eamon S. HynesV. Krozer*Kae Dal KwackBorisas LevitasWee Teck Lim*Michael Mick*Linda Milor

Om P. NangiaBinod Bihari PalNestore PolceWilliam J. RummelSubhash Chander RustagiSei-Hyung Ryu*Seetharaman SridharInchae SongGerhard Stelzer

Sehat SutardjaYu-Chong TaiGabriel VasilescuRichard B. Watson, Jr.John T. YueGang Zou*

If you have been in professional prac-tice for 10 years, you may be eligible forSenior Membership, the highest grade ofmembership for which an individual canapply. New senior members receive awood and bronze plaque and a credit

certificate for up to US $25 for a new IEEEsociety membership. In addition, a letterwill be sent to employers, recognizing thisnew status.

For more information on senior mem-ber status,visit http://www.ieee.

org/membership/grades_cats.html#SENIORMEM To apply for senior memberstatus, fil l out an application athttp://www.ieee.org/organizations/rab/md/smelev.htm.

* = Individual designated EDS as nominating entity

IEDM Short Courses on Videotape

Congratulations to the EDS Members Recently Elected to IEEE Senior Member Grade!

• Event-Upset (SEU) Radiation Hardening of DMOSs BCDMOS Technologies

MICHAEL S. SHURTel: +1 518 276 2201E-Mail: [email protected]: +1 518 276 2990• Wide band gap electronic and

photonic devices• Solid state lighting• Terahertz radiation Detection

and Emission by High• Electron Mobility Transistors

RAJENDRA SINGHTel: +1 864 656 0919E-Mail: [email protected]: +1 864 656 5910• Microsystems and Nanosystems:

Manufacturing Challenges andOpportunities

WILLIAM S. TRIMMERTel: +1 908 359 0012E-Mail: [email protected] Fax: +1 908 359 2094• Micro Systems Technology,

Micro Machines

SIGURD WAGNERTel: +1 609 258 4631E-Mail: [email protected]: +1 609 258 6279• Large-Area Electronics

WEN I. WANGTel: +1 212 854 1748E-Mail: [email protected]: +1 212 932 9421• Wide Bandgap III-Nitrides

Semiconductors for Device Applications

• Device, Materials, and Physics Issues

H.S. PHILIP WONGTel: +1 914 945 2649E-Mail: [email protected] Fax: +1 914 945 3623• Silicon Technology? Nanoscale

CMOS and the Road Beyond

JERRY M. WOODALLTel: +1 203 432 4298E-Mail: [email protected]: +1 203 432 6420 • Heterojunction Materials,

Devices and Processing InAs Based Terahertz Electronics

• Broad Band (UV to IR) High Speed Pin, and Schottky Detectors and APDs

JIMMY J.M. XUTel: +1 401 863 1439E-Mail: [email protected] Fax: +1 401 863 9107

• Carbon Nanotube Electronics: Potential, Reality, Critique

• Engineering DNA Conductivity for Future Electronics and Computing

• Y-Junction Carbon Nanotubes: Synthesis and Device Functions

• Binary Super Gratings - A NewEnabling Concept for Wavelength Selective Optics

• Nanoelectronics - evolution from CMOS to Nanotubes and DNAs

PETER S. ZORY, JR.Tel: +1 352 392 4962E-Mail: [email protected]: +1 352 392 9266


15

USA, Canada and Latin America (Regions 1-6, 7 & 9)

ED Mid-Hudson Valley - by Michael HargroveThe IEEE Electron Devices Mid-HudsonValley Chapter sponsored a meeting inJanuary 2003 in conjunction with thelocal IEEE Section. The meeting wasextra special since we had two differentspeakers discussing their work in high-speed communication chip design andnon-volatile memory design. The meetingwas very well attended.

The f irs t speaker was Dr. DavidMeltzer of Epson Research and Develop-ment located in Wappingers Falls, NY.Dr. Meltzer discussed the background ofEpson R&D in terms of when and why thedesign center was opened, and alsoshared his view of the challenges of high-speed communication chip design,specifically Serdes (serializer-deserializ-er). He presented a very comprehensiveoverview of not only the design chal-lenges, but also the challenges of incor-porating some analog circuits within theframework of a digital technology. Dr.Meltzer also elaborated on the testingrequirements of such high-speed chipsand the challenges of incorporating on-chip testing features, as well as benchtesting constraints.

The second speaker was Dr. SeikiOgura, who is the founder and president

of Halo LSI, Inc. The company is alsolocated in Wappingers Falls, NY andfocuses on the development and licens-ing of its flash memory. Prior to his cur-rent position, Dr. Ogura worked as atechnologist at IBM SemiconductorResearch and Development Center inFishkill, NY for twenty-five years. He andhis group made several contributions toCMOS technology development, some ofwhich are: lightly doped drain FET, side-wall spacer technique, shallow trenchisolation, and damascene metal process-ing. He is an IEEE Fellow and recipient ofthe Morris Liebman award. He has alsoserved as an advisor to the EuropeanConsortium for the ULTRA/ESPIRIT pro-jects to develop 0.18 micron and 0.1micron technology in Europe. Dr. Oguradiscussed the physics of flash memoryand shared his experience of starting asmall high-tech company.

ED Northern Virginia/Washington - by Murty PolavarapuThe Electron Devices NorthernVirginia/Washington Chapter held itsMarch meeting jointly with the Lasers & Elec-tro-Optics Society (LEOS) chapter on March31, 2003. Dr. John David from the Universi-ty of Sheffield, a Distinguished LEOS Lectur-er, delivered a talk on recent developmentsin realizing low excessive noise inAvalanche Photo Diodes (APDs). Recentresults at the University of Sheffield and theUniversity of Texas (Austin) have shown thatlow excess noise can be obtained in homo-junction structures simply by utilizing thinavalanching regions. He also discussedhow in addition to reducing the excessnoise, thin avalanching widths offer APDswith other advantages such as loweroperat-ing voltages, better temperature stability andpredicted enhancedspeed of operation.

The Chapter held its January meetingjointly with the local Microwave Theoryand Techniques Society (MTTS) chapteron January 9, 2003. Dr. Baruch Levushof the Naval Research Laboratoryaddressed the gathering on “VacuumElectronics for the 21st Century”.

He explored the history and diversityof this remarkable technology, with-emphasis on advances in vacuum elec-

t ronic ampl i f iers , inc luding theMicrowave Power Module (MPM),Gyro-amplifiers and Multiple BeamAmplifiers that have been enabled bythe ongoing development of physics-based modeling and simulation tools.He stated that although some view it asa stodgy remnant of an old technology,soon to be supplanted, it has been and,as new requirements emerge; will con-tinue to be the enabling technology forentire classes of high-power high-fre-quency ampl i f iers wi th the mostdemanding specifications for use inboth military and commercial systems.

— Murty Polavarapu, Editor

CAS/ED/SSC Ottawa Chapter- by Vijay K. AroraProfessor Vijay K. Arora, Partner for theCAS/ED/SSC Ottawa Chapter, visitedOttawa on March 3, 2003. He also visit-ed the CAS/ED/CPMT/LEO Toronto andED/SSC Kitchener-Waterloo chapters onMarch 5 and 6, respectively. He gave aDL talk entitled, “Hot Electrons: A Myth orReality?” at each of the three chapters.During this talk, he apprised the candi-dates on mobility and diffusion coefficientdegradation in a high electric field (seeApplied Physics Letters, Volume 80, Num-ber 20, May 20, 2002, pp. 3763-65). Hediscussed how electron temperature can beextracted from these expressions depend-ing on the context of the experiments. Inparticular, he described the modification inthe Einstein relation between the diffusion

Dr. David Meltzer ofEpson Research and Development

Professor Vijay K. Arora visits Canadian Chaptersunder the DL/Partners Program

Regional and Chapter NewsRegional and Chapter News

USA, Canada and Latin America (Regions 1-6, 7 & 9)


16

coefficient and the mobility as a result ofthe presence of high electric field. Moreinformation is available from Professor Aro-ra at [email protected]. The talk wassponsored by the Electron Devices SocietyDL program with local hospitality providedby the host.

— Arokia Nathan, Editor

ED South Brazil- by J. W. SwartA chapter meeting was held on February4th. 2003, at the State University ofCampinas, UNICAMP, in Campinas, SP.Two seminars were given by Prof.Siegfried Selberherr, from the TechnicalUniversity of Vienna, Austria, as distin-guished lecturer from EDS. The seminarswere entitled: “Modeling High SpeedSemiconductor Devices of Modern Com-munication Systems” and “Past and Futureof Microelectronics Technology”. Eachlecture took about 50 minutes and theywere followed by discussions. A total of50 people attended the seminars. Mostwere staff and students from the Faculty ofElectrical and Computer Engineering ofUNICAMP; a group of 8 students camefrom the University of São Paulo; 2 wereIC designers at a company, Motorola,and 2 faculty members from other univer-sities, UFRJ and UNESP, also attended theseminars. After the seminars, Prof. Selber-herr visited the Center for SemiconductorComponents, where he also had discus-sions with students working on device sim-ulation, using the MINIMOS program. Asocial event was organized for theevening. A dinner took place at a localsteak house (“churrascaria”), where addi-tional discussion and exchange of ideashappened. The day after the seminar,Prof. Selberherr, continued his trip, includ-

ing a visit of The Falls of Iguaçú, locatedin the region of the chapter, and whichconstitutes a symbol of the chapter andillustration of the first page of it’s homepage: http://www.ccs.unicamp.br/ieee-eds. For additional information, contactP ro fessor Jacobus W. Swar t a [email protected].

— Adelmo Ortiz-Conde, Editor

Europe, Middle East &Africa (Region 8)

MTT/ED/AP/CPMT Saratov-Penza - by Michael V. DavidovichA lot of our scientific activities are present-ed in this report.

First of all, the 4th International Vacu-um Electron Sources Conference 2002(IVESC 2002) was organized by theSaratov Department of the Institute ofRadio Engineering and Electronics of theRussian Academy of Sciences and washeld in Saratov, Russia July 15-19,2002. The conference was registered asan IEEE conference and supported by theRussian Fund for Basic Research, theRussian Ministry of Science and Technol-ogy, the Government of the Saratovregion as well as Saratov State Universityand other research institutes and electron-ic companies of Russia, Europe, Asiaand the USA. Further information onIVESC 2002 can also be found on theweb at http:// www.ivesc.sgu.ru.

The 2002 IVESC, which was held forthe first time in Saratov in the formerSoviet Union, was very successful andkept the tradition of high standards estab-lished by previous conferences. The totalnumber of participants was 176, includ-ing participants from France, UK, Ger-many, Switzerland, Ukraine as well asfrom other Russian regions. We areappreciative to all the participants fromthe USA, China, Japan, Korea and Indiawho contributed to the high standard ofthe conference and scientific exchangebetween world regions.

Technical sessions with 15 invited and133 contributed papers, including 44oral and 89 poster presentations, wereincluded in the conference program. Thegeneral topics of the 4th IVESC wereelectron emission phenomena, technolo-gies for vacuum electron sources andapplications of vacuum electron sources.

A number of important scientific prob-

lems were considered in contributedreports. They were: thermionic emission,field emission (FE) including FE of corbonbased materials such as carbon nan-otubes, Nan graphite, diamond, otheremission mechanisms and microwavetube applications. We must especiallymake note of the invited lecture of Prof.Yuri V. Gulyaev, who is the Director ofthe Institute of Radio Engineering andElectronics of the Russian Academy ofSciences (IRE RAS) and one of pioneersin the field of carbon nanotubes FE.

We are very thankful to all partici-pants of the IVESC conference for theirinteresting reports. We also appreciatethe continuous support from Prof. DimitryF. Ayatskov, the Governor of the SaratovRegion, and the other members of thenational and Local Organizing Commit-tees. It should be especially noted that thisconference could never have happenedwithout the numerous sponsors who haveenabled a smooth organization, includingattracting keynote speakers. Finally wewant to thank all the contributors and ref-erees and also IRE RAS for their efforts inrealizing these Proceedings.

The next IVESC conference is in 2004and will be held in Bejing, P.R. Chinaand will be organized by Prof. F. Liaofrom BVERI. More information can befound on the web at http://www.cie-chi-na.org/ivesc2004.

MTT/ED/AP/CPMT/SSC WestUkraine - by Mykhailo I. AndriychukThe VIIth International Conference on theExperience of Designing and Applicationof CAD Systems in Microelectronics(CADSM-2003) was co-organized by theMinistry of Education and Science of theUkraine, by the National University ‘LvivPolytechnic’ and by the West UkraineChapter under the technical co-sponsor-

From left to right: Jacobus W. Swart andSiegfried Selberherr

The discussion at the conference banquet,IVESC’02, Saratov, Russia

Europe, Middle East &Africa (Region 8)


17

ship of the IEEE EDS. This Conferencewas successfully held February 18-21,2003 in Lviv–Slavsko, Ukraine. TheCADSM is the most representative confer-ence in the field of the optimization prob-lems of the IC technological processes,development of models and methods ofmicroelectronic devices designing, andfield problem solution among all confer-ences organized in the Ukraine and theformer Soviet Union countries.

Four lectures in the area of microelec-tronics and integrated circuits designwere presented at the Plenary Session. Inaddition, very interesting informationabout the Project REASON (Research andTraining Action for System On ChipDesign), founded by the European Union,was presented.

Many young scientists and engineers,students, and PhD students participated atthe Conference. They were given theopprtunity to present the results of theirown scientific investigations, as well as toreceive some experience and new knowl-edge from their experienced colleagues.The Best Student Paper Awards were pre-sented to young participants.

We are thankful to all participants ofCADSM for the high professional level andamicable atmosphere. We will welcomeyou in the CADSM-2005 conference in

Slavsko. For more information, please con-tact the CADSM-2003 Conference Chair,Head of CAD Department, Prof. MykhayloLobur, [email protected], and theConference Web Site: http://www.polynet.lviv.ua/CADSM

2004 International Conference onMicroelectronics (MIEL 2004)- by Ivica ManicThe 24th International Conference onMicroelectronics (MIEL 2004) will be heldMay 15-18, 2004, at the Faculty of Elec-tronic Engineering, University of Nis, Ser-bia & Montenegro. The MIEL 2004Conference will be organized by the IEEEYugoslavia Section - ED/SSC Chapter, incooperation with the Faculty of ElectronicEngineering, University of Nis, Ei-HoldingCo.-Nis, and Society for ETRAN, under theco-sponsorship of the IEEE EDS, with thecooperation of IEEE SSCS, and under theauspices of Serbian Ministry of Science,Technology and Development, YugoslavAcademy of Engineering, and City Assem-bly of Nis.

MIEL is an outstanding European con-ference providing an international forumfor the presentation and discussion of therecent developments and future trends inthe field of microelectronics. Since 1984,there is an aura of internationalizationaround the MIEL conferences, providingan opportunity for specialists from bothacademic and industrial environmentsfrom the West and East, as well as fromthe countries of the Third World, to meetin an informal and friendly atmosphereand exchange their theoretical and practi-cal experiences. Since 1995, MIEL hasbeen organized under the technical co-sponsorship of IEEE EDS, while the confer-ence received IEEE EDS co-sponsorshipfor the first time in 2000.

The topics to be covered by the techni-cal program of the MIEL 2004 Confer-ence include all important aspects ofmicroelectronic devices, circuits and sys-tems, ranging from materials and process-es, technologies and devices, devicephysics and modeling, process anddevice simulation, circuit design and test-ing, system design and packaging, andcharacterization and reliability. Based onthe past decade history, the technical pro-gram is expected to consist of about 150contributed papers by the authors frommore than 30 countries all around theworld, which will be structured into oraland poster sessions. These papers,together with 12 invited papers, which

are to be presented by the world leadingauthorities, will form the solid foundationof the conference. Two related scientificevents, namely the workshops “PowerDevices and ICs” and “Micro system Tech-nologies”, contain 5 invited papers each,will round off the technical program.

The invited lectures are: “GaN Elec-tronics: Promises and Prospects” (I.Adesida), “Add-On Process Modules –an Economic Enhancement of SiliconTechnology” (J. Burghartz), "Concept ofVirtual MST-Factory” (H. Detter), “Charac-terization and Modeling Issues in MOSStructures with Ultra Thin Oxides” (G.Ghibaudo), “Memory Technology Includ-ing Emerging New Memory” (K. Kim),“MICROS: An Experimental Coin-Sized,Low Cost, Low Power CMOS ZigBeeRadio at 2.4 GHz as a Ubiquitous Net-work Node” (K. Lee), “CMOS AnalogDesign for Wireless Communication” (V.Liberali), “CMOS Reliability: EmpiricalModeling and SPICE Simulation” (J. Liou),“Analysis of High Speed HeterostructuresDevices” (S. Selberherr), “Power Manage-ment in Wireless OEM Devices” (K.Shenai), “Predictive Simulation of Microdevices and Microsystems: The Basis ofVirtual Fabrication, Experimentation andTest”” (G. Wachutka), and “MicrowavePhotonics Links in Modern CommunicationNetwork: Component Technology” (P. Yu).

For registration and other information,visi t the MIEL 2004 Home Page athttp://europa.elfak.ni.ac.yu/miel/, orcontact the MIEL Conference Secretariat,Department of Microelectronics, Facultyof Electronic Engineering, University ofNis, Beogradska 14, 18000 Nis, Serbia& Montenegro; Tel.: +381 18 529 325;Fax: +381 18 46 180; E-mail: [email protected]

— Alexander Gridchin, Editor

ED Sweden- by Mikael OstlingThe ED Sweden Chapter has been veryactive during the first part of 2003. Weorganized two half-day symposia that hadgreat attendances.

The first symposium was on the topic“CMOS silicon device technology forfuture generations high frequency sys-tems”. As a specially invited lecturer, EDSVice President, Prof Hiroshi Iwai, held anoverview talk on “CMOS downscalingbeyond 10 nm”. Thereafter, a highlyappreciated poster session was held withmany PhD students from both ChalmersUniversity in Gothenburg, Uppsala Uni-

Mr. Tomash Zacharz receives the Best YoungSpeaker Award from Prof. Mykhaylo Lobur,

Conference Chairman

2004 International Conference on Microelectronics


18

versity and KTH where the symposiumwas held. More than 60 people attendedthe symposium.

The second symposium we organizedwas called “high speed digital seminar”and was done together with Agilent tech-nologies. Excellent presentations weregiven on subjects such as “AchievingHigher Bandwidth Connectivity with High-speed Active Probes" and "Jitter Measure-ments in Digi tal Circui ts”. Activedemonstrations were also complementingthe talks. More than 30 people attendedthe symposium.

— Andrzej Napieralski, Editor

ED Israel- by Professor Nathan CroitoruOn Thursday, February 27, 2003, at theHolon Inst. of Technology

(HAIT) – Holon: Subject of meeting:“Feasibility Tests of SiC Thin Films by DCSputtering”. Dr. Alex Axelevitch - Depart-ment of Electrical and Electronics Engi-neering, Holon Academic Institute ofTechnology.

The speaker’s abstract was as follows:Silicon carbide is one of the materialsthat gained in importance from the lasttime. SiC single crystalline substrates areused to produce high-temperature andfast-acting electron devices. The hydro-genated amorphous silicon-carbide alloythin films have been of technical interestas an optoelectronic material. These filmshave important applications also as p-type layers in amorphous silicon photo-voltaic devices. Usual methods appliedfor silicon carbide films deposition areplasma enhanced CVD under plasmadecomposition of organic compoundssuch as CH4, C2H2, and C3H8.

In this work, the SixCy thin films were

deposited on silicon and glass sub-strates using magnetron DC sputter-ing the ceramic SiC target in argonplasma. Sputtering was providedas a continuous process and as aconsequent sputtering of two tar-gets: ceramic SiC and single crys-talline Si. Optical, and dialecticalproperties of obtained films wereinvestigated. Deposited films weretransparent and behaved as dielec-tric in the Al-SixCy-Al and Al-SixCy-Si structures.

The Chairmen of the meetingwere: Prof. Nathan Croitoru and

Dr. Gady Golan - 30 people con-sisting of students and academicstaff, at tended the meeting inHolon.

On Thursday, March 13, 2003, at theHolon Inst. of Technology (HAIT) - Holon.Subject of meeting: “Pedagogical Aspectsin the Teaching of Electrical Engineering”.Prof. Arie Shenkman - Head of theDepartment of Electrical and ElectronicsEngineering, Holon Academic Institute ofTechnology.

The speaker’s abstract was as follows:During my more than 30 years of teach-ing different subjects of the electrical engi-neering curriculum, especially CircuitAnalysis, I have discovered that some rel-atively “simple” topics of this curriculumare difficult for the students to understandcorrectly. In this seminar I would like topresent some of these topics for discus-sion: Power and its distribution; Mathe-matical or ideal elements; Voltage andemf; Current and its direction flow; Fara-day's Law and Lentz's Principle; Currentthrough a capacitor; Coupled elementsand dot terminals.

The Chairmen of the meeting were:Prof. Nathan Croitoru and Dr. GadyGolan - 35 people, students and academ-ic staff, attended the meeting in Holon.

MTT/ED/AP/LEO UK&RI- by Terry OxleyOriginating in 1993 under the joint spon-sorship of King’s College London and theIEEE UKRI MTT/ED/AP/LEO Chapter, theannual IEEE International Symposium onElectron Devices for Microwave and Opto-electronic applications (EDMO) representsa most successful event established by theIEEE local Chapter. EDMO’2002 washeld 18-19 November 2002 and hostedfor the second time by the University ofManchester Insti tute of Technology(UMIST) Manchester UK. Other previousvenues have included the Technical Uni-

versity of Vienna Austria, King's CollegeLondon, the University of Leeds, and theUniversity of Glasgow Scotland. The2002 event, organized by UMIST with theIEEE UK&RI MTT/ED/AP/LEO Chapter,was held with technical co-sponsorshipfrom IEEE EDS and in co-operation withIEEE MTT-S, IEEE LEOS, Institution of Electri-cal Engineers (IEE, UK) and Institute ofPhysics (IOP, UK). The meeting was hostedby Professor Mo Missous (Chairman) andProfessor A A Rezazadeh (Co-Chairman).

Papers were presented from eighteendifferent countries and were arranged ineight oral and two poster sessions (6 invit-ed talks, 25 oral presentations and 26poster papers) covering all aspects ofmodern Si, SiGe, GaAs, InP, GaN, SiCdevices and providing the emphasis onmaterial growth and characterisations,wide-band gap devices and circuits,device and circuit modelling and technol-ogy including microwave and photonicapplications, ranging from modellingover circuit simulation and design to sys-tem aspects.

Six Prestigious Invited Speakers gavepresentations on: “InP HEMTs and HBTsTechnology and Applications” by D. Stre-it (Velocium, USA); “Molecular Beam Epi-taxy: Development of a Production-worthyTechnique” by D. Williams (Thermo-VGSemicon, UK); “Low-cost manufacture ofdevices structures” by M J Kelly (Cam-bridge University, UK); “Devices forMicrowave Applications” by Mike J Uren(QuinetiQ Ltd, Malvern Technology Cen-tre, UK); “Solid-state RF Power Amplifiers-Status and Perspective” by Sylvain LDelage (Thales Research and Technology,France); and “Optimization of On-ChipElectrostatic Discharge (ESD) Structure forRF Operations” by J.J. Liu (University ofCentral Florida, USA).

It is the tradition of the IEEE UK&RIMTT/ED/AP/LEO Joint Chapter to awardtwo best paper awards - one from theoral and one from the poster sessions. AtEDMO 2002, the awards were present-ed to: Colin J Mitchell - best oral paper –for his presentation “Material characteri-zation of a highly strained & partiallystrain compensated InxGa1xAs/InyAl1-yAs quantum cascade light emittingdiodes grown by MBE for emission in thenear infrared (2-4mm)” authored by Col-in J Mitchell1, J L Sly1, M Missous1, SBanerjee2, K A Shore2 (1UMIST, 2Uni-versity of Wales); and – best posterpaper - Kerstin Schneider "Folded-cas-code transimpedance amplifier for burst-mode applications" authored by Kerstin

Figure 1 shows Prof Hiroshi Iwai during his talk at the EDSweden Chapter Symposium on CMOS high frequency

technology


19

Schneider & Horst Zimmermann (Institutefor Electrical Measurements & CircuitDesign, TU Vienna).

Full details of the EDMO 2002 Sympo-sium Proceedings (322 pages) can beelectronically viewed through the IEEE.Catalog Number: 02TH8629. ISBN: 0-7803-7530-0.

For the first time an EDMO meeting isplanned for the USA. In 2003, the EDMOSymposium, will be in its eleventh year,and will take place, 17-18 November atthe Central University of Florida, USA.For more information, see EDMO on theweb at www.edmo-symposium.org and forthe local organizer (http://www.ucf.edu).

For further information on Chapternews, please contact the Chapter Chair-man: Ali A Rezazadeh, Professor ofMicrowave Engineering, Dept. of Electri-cal Engineering and Electronics, Universi-ty of Manchester Institute of Science andTechnology (UMIST), P.O. Box 88, Man-chester M60 1QD, UK. Tel: +44 (0) 161200 4708 (Sec.4801). E-Mail: [email protected].

— Gady Golan, Editor

ED Spain- by Ramon AlcubillaThe CDE03 (Electron Devices Conference)was held in Calella (Barcelona) from 12to 14 February 2003. It was the fourthedition of this conference with an impor-tant participation of researchers from uni-versities, industries and research centers.The Conference was organized throughinvited lectures and poster sessions.Among the invited talks were: CharlesHunt (UCLA-Davis), Novel materials andnanostructures for application to Field-Emission Devices; J.Suñe (UAB), Gate

oxide reliability near the scal-ing limit; J.Alonso (Isofoton),State of the Art in Siliconsolar cells; J.Barbolla (UV),Atomistic simulation of tech-nological processes; G.Cleri-ci (Keithley), Improving LowLevel Measurements onNanoelectronics and Semi-conductor Devices: Issuesand Methods; J.M Villegas(UB), Passive integratedDevices for RF applications.Nearly 200 researchers,including the invited lecturers,participated in the Confer-ence. The next occurrence ofCDE will take place in 2005in Taragona.

The Workshop on CompactModeling for RF/MicrowaveApplications (CMRF03)- by Slobodan Mijalkovic and JoachimBurghartzThe workshop on Compact Modeling forRF/Microwave Applications (CMRF03),sponsored by the Delft Institute of Microelec-tronics and Submicron technology (DIMES)and technically co-sponsored by the IEEEElectron Device Society, is taking place atCentre de Congrès Pierre Baudis, Toulouse,France on October 1, 2003. It is organizedfor the first time as a joint event to the Euro-pean premiere of Bipolar/BiCMOS Circuitand Technology Meeting (BCTM 2003) thatwill be held at the same place 28-30 Sep-tember 2003 with tech co-sponsorship fromthe IEEE Electron Device Society.

The CMRF03 workshop focuses on thecrit ical compact modeling issues inRF/Microwave applications. It is a natur-al response to increasing demands of theRF/Microwave and communication tech-nology designers for accurate and reli-able compact modeling procedures atultra-high frequencies. The most importanttopics covered by the CMRF workshopprogram are:

• Advanced bipolar transistor modeling for high frequency applications

• Compact modeling of modern hetero-junction bipolar transistors

• Electro-thermal modeling with self-heating and thermal coupling effects

• Compact modeling of substrate coupling and interconnections

• Noise modeling• Parameter extraction techniques• Practical compact modeling issues in

RF/microwave design

The workshop will consist of invitedkeynote lectures given by the worldleading experts in the field and relateddiscussion sections. The tentative list ofthe keynote speakers include: Henk deGraaff (Delft University of Technology,The Netherlands), Juin J. Liou (Universi-ty of Central Florida, USA), Guofu Niu(Auburn Un ive r s i t y , USA) , Je roenPaasschens (Ph i lps Research , TheNetherlands), Niccolo Rinaldi (Univer-s i ty of Naples, I ta ly) and MichaelSchroter (Universi ty of TechnologyDresden, Germany).

This workshop will provide the uniqueopportunity for RF/Microwave compactmodel developers in industry and acade-mia to clearly identify areas that need fur-ther research. The workshop will alsohelp circuit designers to address a widediversity of RF/Microwave compact mod-eling issues and find a way to utilize itinto the design of new products.

For up-to-date information on theCMRF03 workshop, please visit the web-site: http://ectm.et.tudelft.nl/cmrf03.

— Christian Zardini, Editor

Asia & Pacific (Region 10)

ED/LEO Australia- by C. JagadishProfessor Amin Dharamsi from the OldDominion University, Norfolk, VA (LEOSDistinguished Lecturer) visited the Chapterand gave a seminar on “Advanced opticalsensing using laser modulation spec-troscopy” on January 7, 2003.

Professor Peter Zory, University ofFlorida, (formerly LEOS Distinguished Lec-turer) visited the Chapter and presented aShort Course on “Semiconductor Lasers:Phenomenological model” during 22 Jan-uary to 2 February 2003. Professor Zoryalso gave seminars on “Pulsed Electro-chemical Techniques for Processing andEvaluating Semiconductor Laser Wafers”and “Designing Interband and Intersub-band Semiconductor Lasers” on February3rd and 4th, respectively.

Dr. Ashok Krishnammorthy, AraLight, NJ(LEOS Distinguished Lecturer) visited theChapter and gave a seminar on “The Inti-mate Integration of VCSELs with VLSI Cir-cuits” on March 10, 2003. Professor DanielMittleman of Rice University, Houston, TX(LEOS Distinguished Lecturer) visited theChapter and gave a seminar on “Imagingwith Terahertz Waves” on March 11, 2003.

For more information, please contactProf. Chennupati Jagadish, Department of

From left to right: Professor Mo Missous - EDMO Chairman, ColinMitchell (winner of the best oral paper), Kerstein Schneider (winnerof the best poster paper), and Ali Rezazadeh - EDMO co-chairman.

Asia & Pacific (Region 10)


20

Electronic Materials Engineering,Research School of Physical Sciences andEngineering, Australian National Univer-sity, Canberra, ACT 0200, AUSTRALIA,Ph: 61-2-6125-0363, FAX: 61-2-6125-0511, Email: [email protected].

AP/ED Bombay - by Prof. M.B. PatilDuring January–March 2003, the IEEEAP/ED Bombay Chapter organized the fol-lowing events. On January 2, Prof. K.CSaraswat, Stanford University, gave a talkon “Performance limitations of devices andinterconnects and possible alternatives fornanoelectronics.”

Dr. Pushkar Apte, McKinsey, USA,talked on “The evolving structure of thesemiconductor industry” on January 9.The audience was given an excellent per-spective of the global scenario regardingfabrication facilities and current trends inthe industry.

On Jan 10, Dr.Natarajan Iyer, IMEC,Belgium, presented a seminar on “ESD:from black magic to CAD assis tedmethodology”. Dr. Iyer gave a good ideaof the problem of ESD and the currentresearch in this area.

Dr. Vishwani D. Agarwal, Rutgers Uni-versity, USA, gave a seminar on January24 on “Minimum dynamic power CMOScircuits” in which he explained the signifi-cance of dynamic power and a linear pro-gramming technique for its minimization.

The AP/ED Bombay Chapter co-spon-sored a two-day seminar on “Circuit simu-lation” Jan 31–Feb 1. The seminar wasattended by students and college teachersfrom various colleges in Mumbai. Theseminar covered an introduction to circuitsimulation, circuit simulation tools, andadvanced topics such as partitioning ofnetworks.

Prof. Tadashi Takano, University ofTokyo, talked on “Gigantic antenna with1 km diameter for microwave powertransmission from a solar power satellite”on March 14. On March 15, 2003, theIEEE AP/ED Bombay Chapter organizeda one day workshop on Microelectronicsand VLSI at the Finolex Academy, Ratna-giri, which is about 450 Km from Bom-bay. Over 130 students and faculty fromvarious engineering colleges in theKonkan region attended the workshop.Profs. A.N. Chandorkar, D.K. Sharmaand V. Ramgopal Rao from the Micro-electronics group, Department of Electri-cal Engineering, IIT Bombay deliveredlectures at this workshop covering variousaspects of microelectronics, including

ULSI chip design, device physics, circuitdesign and Nanotechnology. The talkswere extremely well received and the par-ticipants were exposed to the currentresearch trends in all these areas.

Prof. Vikram Dalal, Iowa State Univer-sity, gave a seminar on “NanocrystallineSi: H, new material for electronic andoptical devices,” on March 20. Hedescribed material growth, transportproperties, and device applications ofnanocrystalline Si: H.

The IEEE AP/ED Bombay Chaptertook the initiative to invite Prof. C.R.Viswanathan, an IEEE Life Fellow, whowas visiting the country, to the IIT Bom-bay campus as part of its efforts to pro-vide a forum for research groupsworking in common areas to interact witheach other. Prof. Viswanathan visited IITBombay on March 13, 2003 and spenta day discussing various research activi-ties that are currently underway in theMicroelectronics group at IIT Bombay.Prof. Viswanathan, who is a senior pro-fessor at the University of California, LosAngeles, discussed various possibilitiesfor research collaboration between theMicroelectronics group at IIT Bombayand UCLA.

For more information, please contactProf. MB Patil, Electrical Engineering Depart-ment, IIT Bombay, Powai, Mumbai 400076,India, Email: [email protected].

ED/MTT India - by Dr. K.S. ChariThe Chapter had pursued EDS STARefforts at two locations. The Harita Ecolog-ical Institute (Paloncha) activities hasprompted the Baltimore region to extendto Harita a grant of US $5000/- to furtherexperiment with the power generationfrom the muscle power of the cattle. Thesecond STAR effort was focused on theNalanda Group of Educational institutionsand allied groups.

The Chapter, in association withElec t ronics Science Depar tment ofKurukshetra University, organized a twoday National Level Symposium on Elec-tronics Technology (NASET 2003) 2 to3 March 2003, with technical paperpresentations, hardware contest cumexhibition, the science and technologyquiz, technical poster competition, pre-sen ta t ion by profess ionals . Dr . S.Ahmed, Director (CEERI, Pilani) deliv-ered a keynote address entitled “Nan-o technology for Cosmet ics” . TheChapter Chair gave a lecture on thedevelopments that shaped electronics,

role of innovation processes and practi-cal applications in the race of the mod-ern world. Professor Hari Singh, Deanof Science, inspired the students to takeup the challenging tasks of probingknowledge and developments in thecountry. The event attracted over 250students and 25 teams from north Indiaparticipated with 60 papers for paperpresentation, 26 entries for the technicalposter competition, and 10 teams in thehardware contest and 25 for the quiz.

The Chapter co-sponsored a nationalconference on “Microchip Design andTechnology” during 6 to 8 March 2003.The local Maharaja Surajmal Institute ofTechnology at Delhi organized the event.Besides keynote addresses by experts inthe field, several faculty and researchworkers presented several technical ses-sions and over 20 papers in the field. Thepapers covered the aspects of simulationof devices, alternate gate dielectrics, radi-ation effects, meteorological challenges,and ASIC implementations, embeddedsolutions, Fuzzy chips, ESD protectionand IC Design. Over 150 participantsattended the event.

For more information, please contactDr. K.S. Chari, Director, Microelectronics& Photonics Division, Department of Elec-tronics, C.G.O. Complex, New Delhi,India, TEL: 91-11-4361464; FAX: 91-11-4363082; Email: [email protected].

ED/SSC Bangalore - by Prof. Navakanta BhatThe first event for the year 2003 was atechnical talk by Dr. Ashok K. Sinha,Senior Executive Vice President, AppliedMaterials Inc. USA. This was held on 10January 2003. The topic of his talk was“Recent Technological Innovations toEnable Moore’s law for sub-100nm Semi-conductor Devices”. He gave the perspec-tives from the equipment manufacturers.

Prof. Vishwani Agrawal, Rutgers Uni-versity, gave a technical talk on “CMOSTesting with Graphical Quiescent Cur-rent Signatures”. This was held on 17January and was co-sponsored by TexasInstruments India. Dr. M.K.Radhakrish-nan, Philips Semiconductors, Singaporedelivered the IEEE Distinguished Lectureon 3 February 2003. The topic was“DBIE-A New Degradation MechanismAssociated with Ultra thin Gate OxideBreakdown in MOSFETs”.

For more information, please contactProf. Dr. Navakanta Bhat, email:[email protected].

— Wee Kiong Choi, Editor


21

ED Japan - by Naoki YokoyamaOn January 20th, the first Japan ChapterStudent Award was given to DaisukeKobayashi, Takeru Amano, Takuji Hosoi,Masumi Saitoh, and Hiroshi Nakatsuji.This award was established in 2002 toencourage student members who activelycontribute to the research of electrondevices. The Japan Chapter selected thesefive students who have shown outstandingactivities in the last year. They receivedmetallic certificate plaques and premiumfrom the Chapter Chair at the JapanChapter annual meeting held in Tokyo.

After the annual meeting, the briefingsession for the 2002 IEDM was held toprovide a summary discussion on thehighlights of the 2002 IEDM. The fiveinvited speakers delivered topics coveringIntegrated Circuits, CMOS Devices,CMOS Interconnects/Process, Model-ing/Simulation, and Compound/Quan-tum Devices. This session has wonpopularity with a lot of the Japanese engi-neers who did not have a chance toattend the last IEDM to discuss the mostadvance information of electron devicetechnology. The session was very success-ful with 120 participants.

ED Kansai - by Hiroyuki SakaiThe 3rd Kansai Colloquium ElectronDevices Workshop was successfully heldat the Campus Plaza Kyoto, Kyoto,Japan, February 25, 2003. The Work-shop was sponsored by the ED KansaiChapter and co-sponsored by Kyoto Uni-versity and Osaka University whichoffered a good opportunity for studentsand researchers in the Kansai area totouch the latest world-class researchdevelopments. Ten papers were selected

for the presentation, with five of themconcerning Si based technologies andthe others being compound semiconduc-tor related. This workshop was consid-ered as a contest for the 3rd MFSK(Message From Spirited Kansai) Award.The winner was Dr. Ota of MitsubishiElectric; the title of the paper was “Nov-el Locally Strained Channel Techniquefor High Performance 55nm CMOS”.Mr. Nakatsuji of Osaka University wasalso selected for the student award forhis paper "A Study of Subband Structureand Transport of Two-Dimensional Holesin Strained Si p-MOSFETs Using Full-Band Modeling". The winners will behonored at the next Kansai ColloquiumElectron Devices Workshop with amemorial wall plaque engraving theirnames. The 2003 first general assemblymeeting of the EDS Kansai Chapter fol-lowed the workshop. The new executiveofficers for 2003-2004, including thenew Chapter Chair, Dr. Daisuke Ueda,were introduced to the members. Thecoming international conference enti-tled “2003 International Meeting forFu tu re E lec t ron Devices, Kansai(2003IMFEDK),” was announced andcalled for an active paper submission.The first executive officers’ meeting wasalso held on the same day. The chairper-son of each committee was selected first;an accounting report was next and activ-ity plans followed. The key topic wasadministration of the 2003 IMFEDK.The conference will be held at the Osa-ka University Convention Center July16-18. Making posters and having aweb site were decided to advertise theeven t . The URL of the web s i te ishttp://www.imfedk.org.

— Hisayo S. Momose, Editor

ED/SSC Hong Kong - by Hei WongThe ED/SSC Hong KongChapter has held and spon-sored a series of technicalactivities since the lastreport. On October 29,2002, the Chapter was visit-ed by EDS DL Professor C.K. Sarkar of Jadavpur Uni-versity, India. He also pre-sented a very interestingseminar on “Impact ioniza-tion induced gate oxidedegradation mechanisms in

metal-oxide-semiconductor devices” inthe City University of Hong Kong. TheChapter sponsored conference: IEEEInternational Conference on Field-Pro-grammable Technology was held in theChinese University of Hong Kong dur-ing December 16 to 19, 2002. Over80 papers were presented in oral andposter in the ten technical sessions.Furthermore, f ive keynote speakershighlighted the state-of-the-art in thetopics relevant to the field-programma-ble technology.

During January 6 to 8, 2003, aworkshop on “Selective, patterned andself-assembled Growth of Nan-struc-tures” was organized by professors K.M. Lau (EDS DL), T. F. Kuech (Universi-ty of Wisconsin at Madison) and S. S.Lau (University of California at SanDiego) in the Hong Kong University ofScience and Technology. The technicalprogram highlighted leading advancesin the formation of nano-structures bychemical, growth or self -assembledmeans. The workshop consists of lead-ing researchers from the China, US,Europe, Taiwan, Hong Kong and otherparts of the world. Invited speakersinclude: L.J.Chen, (National TsinghuaUniversity, Taiwan), S. DenBaars (Uni-versity of California, Santa Barbara),D. Dapkus (University of Southern Cali-fornia), M. Heuken (Aixtron AG), T.Kuech (University of Wisconsin, Madi-son), H.S. Kwok (Hong Kong Universityof Science and Technology), S.T.Lee(City University of Hong Kong), J.Red-wing (Pennsylvania State University), J.Tsao (Sandia National Laboratory), N.Wang (Hong Kong University of Sci-ence and Technology).

A short course on “Semiconductor Opto-electronics” was organized by Professor C.Surya in Hong Kong Polytechnic Universityduring January 16 to 20, 2003 ProfessorM. Pilkuhn of Stuttgart University, Germany,and Professor H. -L. Hwang of NationalTsinghua University, Taiwan, are the inviteddistinguished lecturers for the 4-day shortcourse. Professor Pilkuhn presented detaileddiscussion on many important issues of thephysics and the application of advancesemiconductor lasers. Professor Hwang’slectures concentrated on the physics andpotential application of Si optoelectronicdevices based on amorphous Si and nanostructure Si devices.

— Hei Wong, Editor

The Briefing Session for the 2002 IEDM


22

July 1 - 4, 2003, T Siberian Russian Work-shop and Tutorial on Electron Devices andMaterials Location: NSB Convention Center,Novosibirsk, Russia Contact: Vladimir Kolchuzhin,Karl Marx prospect 20, Novosibirsk, Russia630092 Tel: +7 3832 460877 Fax: +7 3832460209 E-Mail: [email protected] Deadline:3/15/03 www: http://ieee.nsk.su/edm

July 3 - 5, 2003, T IEEE Conference on Elec-tron Devices and Solid State Circuits Loca-tion: New World Renaissance Hotel, Hong Kong,China Contact: Hei Wong, City University, 83 TatChee Avenue, Kowloon, Hong Kong Tel: +8522788 7722 Fax: +852 2788 7791 E-Mail:[email protected] Deadline: 2/28/03 www:http://www.ee.ust.hk/ieee_eds/edssc.htm

July 7 - 11, 2003, T IEEE International Sympo-sium on the Physical and Failure Analysisof Integrated Circuits Location: Shangri-laHotel, Singapore, Singapore Contact: JasmineLeong, Kent Ridge Post Office, PO Box 1129,Sin-gapore 911105 Tel: +65 743 2523 Fax: +65746 1095 E-Mail: [email protected] Deadline:1/15/03 www: http://www.ieee.org/ipfa

July 7 - 11, 2003, @ International VacuumMicroelectronics Conference Location: SenriLife Science Center, Toyonaka, Osaka, Japan Con-tact: Mikio Takai, Osaka University, Machikaney-ma 1-3, Toyonaka, Osaka, Japan 506-8531 Tel:+81 6 6850 6693 Fax: +81 6 6850 6662 E-Mail:[email protected] Deadline: 3/15/03www: http://ivmc2003.rcem.osaka-u.ac.jp

July 16 - 18, 2003, T IEEE International Meet-ing for Future of Electron Devices, KansaiLocation: Convention Center, Osaka University, Sui-ta Campus, Osaka, Japan Contact: Hiroshi Noza-wa, Kyoto University, Graduate School of EnergyScience, 208, # 2 Building, Kyoto, Japan 606-8501 Tel: +81 75 753 4725 Fax: +81 75 7534725 E-Mail: [email protected]: Not Available www: Not Available

August 12 - 14, 2003, T IEEE Conference onNanotechnology Location: Moscone ConventionCenter, San Francisco, CA, USA Contact:Chennupati Jagadish, Australian NationalUniversity, Department of Electronic Materi-als Engineering, Canberra, ACT 0200, Aus-tralia Tel: +61 2 6125 0363 Fax: +61 2 6125

0511 E-Mail: [email protected] Deadline:3/28/03 www: http://ieeenano2003.arc.nasa.gov

August 18 - 22, 2003, T International Confer-ence on Noise in Physical Systems and 1/FFluctuations Location: Czech Noise ResearchLaboratory, Prague, Czech Republic Contact: JosefSikula, Czech Noise Research Lab, Brno Universityof Technology, Technicka 8, Czech Republic 61600 BRNO Tel: +420 5 4114 3328 Fax: +420 54114 3398 E-Mail: [email protected] Deadline:12/15/02 www: http://www.cnrl.cz/ICNF

August 25 - 27, 2003, T International Sympo-sium on Low-Power Electronics and DesignLocation: JW Marriott Hotel, Soeul, Korea Contact:Rajiv Joshi, IBM Research Division, YorktownHeights,, NY, USA 10598 Tel: Not Available Fax:Not Available E-Mail: [email protected] Deadline:2/14/03 www: http://poppy.snu.ac.kr/~islped/

August 25 - 27, 2003, * IEEE InternationalSymposium on Compound SemiconductorsLocation: University of California San Diego, La Jol-la, CA, USA Contact: Conf Mgt Group LEOS, IEEE,445 Hoes Lane, Piscataway, NJ, USA 08854 Tel:+1 732 562 3899 Fax: +1 732 562 8434 E-Mail: [email protected] Deadline: NotAvailable www: http://www.i-leos.org

September 3 - 5, 2003, @ IEEE InternationalConference on Simulation of Semiconduc-tor Processes and Devices Location: BostonMarriott Cambridge, Cambridge, MA, USA Con-tact: Fely Barrera, Stanford University, CISX 332,Stanford, CA, USA 94305-4075 Tel: +1 650 7231349 Fax: +1 650 725 7731 E-Mail:[email protected] Deadline:2/28/03 www: http://www-tcad.stanford.edu/sispad03/cfp.html

September 6 - 7, 2003, T European GalliumArsenide and Other Semiconductor Appli-cations Symposium Location: ICM ConventionCentre, Munich, Germany Contact: Ing.Schiechtweg, Fraunhofer-Institute IAF, Tullaster 7279108, Freiburg, Germany Tel: +49 761 5159534 Fax: +49 761 5759 565 E-Mail:[email protected] Deadline:7/12/03 www: http://www.eumw2003.com

September 8 - 13, 2003, T Symposium onMicroelectronics Technology & Devices Loca-

tion: TBD, Sao Paulo City, Brazil Contact: JacobusSwart, State University of Campinas, PO Box 6061,R.Pandia Calogeras, 90 13 083-970 Campinas-SP,Brazil Tel: +55 19 3788 7282 Fax: +55 19 37884873 E-Mail: [email protected] Deadline:Not Available www: Not Available

September 8 - 12, 2003, T International CrimeanMicrowave Conference "Microwave &Telecommunication Technology" Location: Sev-astopol State Technical University, Sevastopol,Ukraine Contact: Pavel Yermolov, P.O. Box 240,Sevastopol, Crimea, Ukraine 99057 Tel: +380692 424 287 Fax: +38 0692 555768 E-Mail:[email protected] Deadline: 5/11/03 www:http://ieee.orbita.ru/aps/crim03e.htm

September 28 - 30, 2003, @ Bipolar/BiCMOSCircuits and Technology Meeting Location:Centre De Congres Pierre Baudis, Toulouse, FranceContact: Janice Jopke, CCS Associates, 6611Countryside Drive, Eden Prairie, MN, USA 55346Tel: +1 952 934 5082 Fax: +1 952 934 6741 E-Mail: [email protected] Deadline: 3/7/03 www:http://www.ieee-bctm.org

September 16 - 18, 2003, T European Solid-State Device Research Conference Location:Estoril Congress Centre, Estoril, Portugal Contact:Ana Marcelino, Chipidea Microelectronics,Taguspark, Edificio Inovacao IV, sala 733, PortoSalvo, Portugal 2780-920 Tel: +351 21 033 6300 Fax: +351 21 033 63 96 E -Mai l :[email protected] Deadline: 4/5/03www: http://www.chipidea.com/essderc2003

September 16 - 19 2003, T International Confer-ence on Solid-State Devices and Materials Loca-tion: The Keio Plaza Inter-Continental-Keio PlazaHotel, Tokyo, Japan Contact: Noriko Sugimoto,Japan Tel: Not Available Fax: Not Available E-Mail: [email protected] Deadline: 5/8/03www: http://www.intergroup.co.jp/ssdm/

September 21 - 25, 2003, T Electrical Over-stress/Electrostatic Discharge SymposiumLocation: The Riviera Hotel, Las Vegas, NV, USAContact: Lisa Pimpinella, ESD Association, 7900Turin Road Building 3, Suite 2, Rome, NY, USA03440-2069 Tel: +1 315 339 6937 Fax: +1 315339 6793 E-Mail: [email protected] Deadline:1/13/03 www: http://www.esda.org

* = Sponsorship or Co-Sponsorship Support @ = Alternates support between ’Sponsorship/Co-Sponsorship’ and ’Technical Co-Sponsorship’T = Technical Co-Sponsorship Support # = Cooperation Support

EDS Meetings Calendar(As of 9 May 2003)

The complete EDS Calendar can be found at our web site:http://www.ieee.org/organizations/society/eds/EDSCal.html. Please visit!

EDS Meetings Calendar(As of 9 May 2003)


23

September 21 - 24, 2003, T IEEE Custom Inte-grated Circuits Conference Location: Double-tree Hotel, San Jose, CA, USA Contact: MelissaWiderkehr, Widerkehr & Associates, 16220South Frederick Avenue, Suite 312, Gaithersburg,MD, USA 20877-4020 Tel: +1 301 527 0900ext. 101 Fax: +1 301 527 0994 E-Mail: [email protected] Deadline: 4/2/03 www:http://www.his.com/~cicc

September 23 - 25, 2003, T International Sem-inar/Workshop on Direct and InverseProblems of Electromagnetic and AcousticWave Theory Location: Institute of Applied Prob-lems of Mechanics & Math, Lviv, Ukraine Contact:Nikolai Voitovich, Institute of Applied Problems ofMech & Math of NASU, Naukova St. 3"B", Lviv,Ukraine 79601 Tel: +380 322 651944 Fax:+380 322 637088 E-Mail: [email protected]: 7/1/03 www: http://www.ewh.ieee.org/soc/cpmt/ukraine

September 24 - 26, 2003, T InternationalConference on Advanced Thermal Pro-cessing of Semiconductors Location: TheWestin Francis Marion Hotel, Charleston, NC,USA Contact: Conference RTP, 4830 LangdaleWay, Colorado Springs, CO, USA 80906 Tel:+1 719 579 8050 Fax: +1 719 579 8082 E-Mai l : s i l icon@webrooter .ne t Deadl ine:5/31/03 www: http://www.rtp-conference.org

September 28 - October 2, 2003, * Interna-tional Semiconductor Conference Location:Sinaia Hotel, Sinaia, Prahova, Romania Contact:Dan Dascalu, IMT-Bucharest, PO Box 38-160,Bucharest, Romania 72225 Tel: +40 1 490 8583 Fax: +40 1 490 82 38 E-Mail :[email protected] Deadline: 4/16/03 www:http://www.imt.ro/CAS/

September 29 - October 2, 2003, * IEEE Inter-national SOI Conference Location: NewportBeach Marriott Hotel & Tennis Club, Newport Beach,CA, USA Contact: Bobbi Armbruster, BACM, 520Washington Blvd. Suite 350, Marina Del Rey, CA,USA 90292 Tel: +1 310 305 7885 Fax: +1 310305 1038 E-Mail: [email protected] Deadline:5/2/03 www: http://www.soiconference.org

September 30 - October 2, 2003, @ InternationalSymposium on Semiconductor ManufacturingLocation: Fairmont Hotel, San Jose, CA, USA Contact:Audrey Osborn, Martiz, 1777 Botelho Drive, WalnutCreek, CA, USA 94596 Tel: +1 925 2875388 Fax:+1 925 287 5398 E-Mail: [email protected]: 5/2/03 www: htpp://www.issm.com

October 1, 2003, T Workshop on CompactModeling for RF/Microwave ApplicationsLocation: Centre de Congres Pierre Baudis,Toulouse, France Contact: Slobodan Mijalkovic,Delft University of Technology, DIMES, Delft, TheNetherlands Tel: Not Available Fax: Not AvailableE-Mail: [email protected] Deadline: NotAvailable www: http://ectm.et.tudelft.nl/cmrf03

October 6 - 10, 2003, T European Symposiumon Reliability of Electron Devices, FailurePhysics and Analysis Location: Palatium-Arca-chon, Arcachon, France Contact: Nathalie Labat,Universite Bordeaux 1 - Laboratoire IXL, 351, coursde la Liberation, Talence, France 33405 Tel: +33556 84 6551 Fax: +33 556 37 1545 E-Mail:[email protected] Deadline: 3/31/03 www:http://www.esref.org

October 12 - 15, 2003, T IEEE Conference onIntelligent Transportation Systems Location:Regal International East Asia Hotel, Shanghai, Chi-

na Contact: Fei Wang, University of Arizona, POBox 210020, Tucson, AZ, USA 85721 Tel: +1520 621 6558 Fax: +1 520 621 6555 E-Mail:[email protected] Deadline: 3/1/03 www:http://www.ewh.ieee.org/tc/its/conf.html

October 20 - 23, 2003, * IEEE InternationalIntegrated Reliability Workshop Location:Stanford Sierra Camp, South Lake Tahoe, CA, USAContact: Roy and Becky Walker, 301 North Madi-son, Rome, NY, USA 13440 Tel: +1 315 339 3968Fax: +1 315 336 9134 E-Mail: [email protected]: 7/6/03 www: http://www.irps.org/irw/

November 9 - 12, 2003, * IEEE GalliumArsenide Integrated Circuits SymposiumLocation: U.S. Grant Hotel, San Diego, CA, USAContact: William Peatman, 141 Mt. BethelRoad, Warren, NJ, USA 07059 Tel: +1 908668 5842 Fax: +1 908 412 5989 E-Mail: [email protected] Deadline: 5/5/03 www:http://www.gaasic.org

December 3 - 6, 2003, * IEEE SemiconductorInterface Specialists Conference Location:Marriott Key Bridge, Arlington, VA, USA Contact:Bob Wallace, University of North Texas, MaterialsScience Department, P.O. Box 305310, Denton,TX, USA 76203-5310 Tel: +1 940 369 7834 Fax:+1 940 565 4824 E-Mail: [email protected] Dead-line: 7/14/03 www: http://www.ieeesisc.com

December 7 - 10, 2003, * IEEE InternationalElectron Devices Meeting Location: Washing-ton Hilton & Towers Hotel, Washington, DC, USAContact: Phyllis Mahoney, Widerkehr & Associates,16220 South Frederick Avenue, Suite 312,Gaithersburg, MD, USA 20877-4020 Tel: +1 301527 0900 ext. 103 Fax: +1 301 527 0994 E-Mail: [email protected] Deadline: Not Avail-able www: http://www.ieee.org/conference/iedm

* = Sponsorship or Co-Sponsorship Support @ = Alternates support between ’Sponsorship/Co-Sponsorship’ and ’Technical Co-Sponsorship’T = Technical Co-Sponsorship Support # = Cooperation Support

Attention All EDS Members:

As you may already be aware EDS iscurrently working on a project to scanand digitize all the past proceedings ofthe International Electron Devices Meet-ing (IEDM) that are not currently accessi-ble via IEEE Xplore (pre 1988) issues. Inorder for this project to be completed allthe proceedings must be located and

scanned. We will need to obtain all theIEDM proceedings from 1955-1987.

If you have any of these proceed-ings and would like to donate them forscanning it would be greatly appreci-ated. The proceedings will have to becut to be able to scan them properlybut if you would like they can bebound back together and returned to

you when the job is completed. If youhave any of the past proceedings andare willing to lend them to the Society,please notify Stacey Waters at theEDS Executive Office at your earliestconvenience and she will make thearrangements to obtain the issue(s).Stacey can be reached via e-mail [email protected] or via telephone at+1 732 981 3448.

YOUR HELP IS NEEDED – Request for your assistance in obtaining past proceedings of the International Electron Devices Meeting (IEDM)

EEDDSS

EDITOR-IN-CHIEF

REGIONS 1-6, 7 & 9Eastern, Northeastern & SoutheasternUSA (Regions 1, 2 & 3)Murty S. PolavarapuMicron TechnologyMail Stop 3149600 Godwin DriveManassas, VA 20110, USATel: +1 703 396 2046Fax: +1 703 396 1700E-Mail: [email protected]

Central USA & Canada (Regions 4 & 7)Arokia NathanDALSA/NSERC Industrial Research ChairElectrical & Computer EngineeringUniversity of WaterlooWaterloo, Ontario N2L 3GICanadaTel: +1 519 888 4803Fax: +1 519 746 6321E-Mail: [email protected]

Southwestern & Western USA (Regions 5 & 6)Sunit TyagiIntelM/S RA1 - 2045200 NE Elam Young ParkwayHillsboro, OR 97124-6497, USATel: +1 503 613 6052Fax: +1 503 613 6052E-Mail: [email protected]

Latin America (Region 9)Adelmo Ortiz-CondeUniversidad Simon BolivarApdo. 89000Caracas 1080-AVenezuelaTel: +58 212 906 4025Fax: +58 212 906 4010E-Mail: [email protected]

REGION 8Eastern Europe & The Former Soviet UnionAlexander V. GridchinNovosibirsk State Technical University20 Karl Marx ProspectNovosibirsk, 6300092RussiaTel: +7 383 246 0877Fax: +7 383 246 0209E-mail: [email protected]

Scandinavia & Central EuropeAndrzej NapieralskiDept. of Microelectronics & Computer ScienceTechnical University of LodzAl. Politechniki 11, 93-590 LodzPolandTel: +48 (42) 631 26 45Fax: +48 (42) 636 03 27E-Mail: [email protected]

UK, Middle East & AfricaGady GolanCenter for Technical Education and The Open UniversityPO Box 3932816 Klauzner St.Aviv 61392, IsraelTel: +972 54 526 122Fax: +972 3 646 5465E-Mail: [email protected]

Western EuropeChristian ZardiniLaboratoire IXLUniversite Bordeaux I351 Cours de la Liberation33405 TalenceFranceTel: +33 5 56 84 65 46Fax: +33 5 56 37 15 45E-Mail: [email protected]

REGION 10Australia, New Zealand & South AsiaWee Kiong Choi Dept. of Electrical EngineeringNational University of Singapore10 Kent Ridge CrescentSingapore 119260Tel: +65 874 6473Fax: +65 779 1103E-Mail: [email protected]

Northeast AsiaHisayo Sasaki MomoseMicroelectronics Engineering LaboratoryToshiba Corporation8, Shin-Sugita-cho, Isogo-kuYokohama, 235-8522 JapanTel: +81 45 770 3628Fax: +81 45 770 3575E-Mail: [email protected]

East AsiaHei WongCity University of Hong KongDept. of Electronic Engineering83 Tat Chee AvenueKowloon, Hong KongTel: +852 2788 7722Fax: +852 2788 7791E-Mail: [email protected]

NEWSLETTER EDITORIAL STAFF

EDITORS

Ninoslav D. StojadinovicFaculty of Electronic EngineeringUniversity of NisBeogradska 14, 18000 NisYugoslaviaTel: +381 18 529 326Fax: +381 18 524 931E-Mail: [email protected]

IEEE Electron Devices Society ED Newsletter S July 2003 ... · IEEE Electron Devices Society...

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