Herb's Electron Devices
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Herb's Electron Devices
description
Herb's Electron Devices. Herb's Electron Devices: Herb's Bipolar Transistor. 670 GHz amplifier. 300 GHz PLL. 614 GHz VCO. 204 GHz digital logic. ?. ...plenty of steam left. Herb's Electron Devices: nanometers & 6.1 angstrom. What will the ultimate (4nm ???) FET look like ?. - PowerPoint PPT Presentation
Transcript of Herb's Electron Devices
Herb's Electron Devices
Herb's Electron Devices: Herb's Bipolar Transistor
...plenty of steam left...
670 GHz amplifier
300 GHz PLL
Vout
VEEVB
B
VtuneVout
VEEVB
B
Vtune
614 GHz
VCO204 GHz digital logic
?
Herb's Electron Devices: nanometers & 6.1 angstrom
What will the ultimate (4nm ???) FET look like ?...If III-V, it probably will have an InAs channel
Ni
3.6 nm HfO2
5 nm InAs
3 nm In0.53GaAs
In0.52AlAs Lg ~40 nm
60 nm
At 4 nm gate length, the quantum well had better be < 2 nm thick.
How do wells work at this thickness ?
...but Sakaki says: "terrible mobility"
...and Solomon says: "not enough charge".
Brar, Kroemer, Ibbetson, EnglishAPL, June 1993
Perhaps anisotropic (L-X-) valleysgive more charge and mobility ?
Herb hadlots to say, about this.
Perhaps quantum confinement in -valleys (Si),lets an indirect-gap material emit light ?
...and gave tremendous guidance.
...seems like a good idea...
...well, indeed it was !
Brar, Kroemer, English. Journal Crystal Growth1993
