for 2.5D/3D Multi Chip Packages - MEPTEC.ORG - Unimicron.pdf · Summary and Conclusion Organic...

High Density Organic InterposerHighDensityOrganicInterposerfor2.5D/3DMulti‐ChipPackages/ p g

DyiChungHuPh.D.&ChaowenChungPh.D.UnimicronTechnologyCorp.

November14,2012

www.unimicron.com

Agendag Introduction

Challenges&KeyDevelopmentAreas

TechnicalAspectOfOrganicInterposer

OrganicInterposerStructure

S & C l i Summary&Conclusion

www.unimicron.com

LaminateSubstratein2.5D/3DPackageLaminateSubstratein2.5D/3DPackage

Logic

Silicon i t

Logic Logic Logic

L i

Wide I/O

memory stack

PCB

interposer

BGA Laminate

PWB

Logic

BGA Laminate

PWB

Source:YOLEDevelopment

FCBGASubstrateW/Current TechnologyCurrentTechnology‐ 150umBumpPitch‐ 14/14umLine/Space‐ 60/90umVia/Pad‐ ………………………

World Class Quality 3

NATIONAL QUALITY AWARD

ValueProposition

PCB & Carrier

)

70um PCB & Carrier

(Low Cost)

UnimicronOrganicInterposer

meter(μm)

(Value)

PVViaDiam

30um

TP

IC FabSi Interposer10um(Performance) Organic FC Substrate

Die 2 Die 3Die 1

Si Interposer

5um 30um20um

5um

10um

( ) Organic FC Substrate



LineWidth(μm)

OrganicInterposerOfferingsOrganicInterposerOfferings Cost

Well Established Infrastructure & Supply Chain WellEstablishedInfrastructure&SupplyChain Substratemanufacturing



Packageassembly

Challenges&KeyDevelopmentAreasChallenges&KeyDevelopmentAreas CoreMaterial

ThinCoreCapability LowCTE HighModulus

Di l t i M t i l DielectricMaterial LowCTE&HighModulus Electroless Copper Compatibilities Electroless CopperCompatibilities LowInsulation&LossTangentProperties FineViaFormation ThinABFThickness

DryFilmMaterial,Chemicals,etc.y



Challenges&KeyDevelopmentAreas(cont.)Challenges&KeyDevelopmentAreas(cont.) CuTraceFineLine/SpaceCapability

CuTraceThickness/Tolerance CuSurfaceRoughness CuAdhesion

S b 100 B Pit h Sub‐100umBumpPitch CuPillarBumpOnFineTrace

Laser Via/PTH Capability LaserVia/PTHCapability ViaHoleCleaning High Aspect Ratio Via Filling HighAspectRatioViaFilling

Planarization Large Area CMP LargeAreaCMP

AndMore……….



CoreMaterialSelection ProductionCoreThickness:800/600/400/200um FutureDevelopment:≤ 150umThickness;UltraLow

CTE&HighModulusProperties

45● HVM

▲LVM

A company

B

40

(

▲ LVM

△ R & D

B company

C company

D company

30

35

ung's m

odulu

s

20

25You

TargetCTETargetCTE&Modulus&Modulus

15

0 1 2 3 4 5 6 7 8 9 10

CTE (ppm/℃)



DielectricMaterial/ABFSelection ProductionDielectricThickness:20um FutureDevelopment:<20umThickness;UltraLow

18● HVM

▲

A company

CTE&HighModulus

14

16

18

(

▲ LVM

△ R & D

B company

C company

8

10

12

oun

g's m

odulus

2

4

6You


0

0 5 10 15 20 25 30 35 40 45

CTE (ppm/℃)

&Modulus&Modulus



DielectricMaterial/ABFSelection(cont.) LossTangent&DielectricConstant

0 01 8● HVMA company

0 .01 4

0 .01 6

0 .01 8▲ LVM

△ R & D

B company

C company

z)

0 .00 8

0 .0 1

0 .01 2

Df

(5.8

GH

z

0 .00 2

0 .00 4

0 .00 6

TargetTargetDfDf &&DkDk

0

0 .00 2

2 .9 3 3 .1 3 .2 3 .3 3 .4 3 .5 3 .6

Dk(5.8GHz)



DielectricMaterial/Prepreg Selection ProductionTraceL/S:Min.15/15um FutureDevelopmentArea:< 15/15umL/S

25● HVM

▲ LVM

△ R & D

A company

B company

15

20

ulu

s

10

15

Young's m

odu

5


0

0 5 10 15 20 25

CTE (ppm/℃)



FineLinePatterningTechnologyApproach

1.Lowcost2 C ti l

Pros

SAP(Semi‐Additive) 9/12 5/58/8 Cons

2.Conventionalprocess

Liquid film 1.Materiallimitation2.Linewidth&Cuthicknesscontrol

1.Betterelectricperformance

Pros

LE(LaserEmbedded)

PostCuPlated10/10 8/8 5/5 Cons

performance2.Betterreliability

1.Cuplatinguniformity2.Cleannessafterlasertrench



FineLine/SpaceDevelopment

Hitachi Dry Film Capability

1

Stepper AlignerLeading Dry Film Capability

0.2

0.4

0.6

0.8

Dry

Film

Yie

l

0

12/12

( 10/14 )

11/11

( 9/13 )

10/10

( 8/12 )

9/9

( 7.5/10.5 )

8/8

( 6.5/9.5 )

7/7

( 5.5/8.5 )

6/6

( 5/7 )

5/5

( 4/6 )

L/S (um)



Sub‐100umBumpPitchCapability CuPillarBumpOnCuTrace ProductionCapability:40/80umStaggeredBump

PitchOnMin.15/15umCuTraceL/S FutureDevelopment:≤10/10umL/S;LargeBodySize

Die

Cu‐pillar

CuTrace

SolderMaskSource:Amkor



LaserDrillEquipmentEvolution

10 6 um320~400 nm180~320 nm

DeepUV UV CO2

10.6um320~400nm180~320nm

ExcimerLaser(308nm)

0 10 20 30 40 50 60 70

LaserDrillVia(um)



FineViaFormationCapability ProductionRule:75um(PTH)&60um(BlindVia) FutureDevelopment:≤ 40um(OrganicInterposer)

75um75um≤ 40um40um60um60um≤ 40um40um

ViaHoleCl iCleaning



CopperMetalFillingICSubstratePTHFillingTechnology AspectRatio=1:2

TSVViaFillingTechnology AspectRatio=1:10

75 um

150 um

Future Development for Organic FutureDevelopmentforOrganicInterposer CostEfficiency

ImproveARto1:1.33orHigher;FineViaandThinCoreThickness

TightenPadSize/Registration≤

Source: Claudio Truzzi, Alchimer S.A., Massy, France

HighPerformance,butexpensive



+/‐ 30um

TargetTechnicalAccomplishmentTargetTechnicalAccomplishment

Bump CuTrace L/S Through Via Thickness Layer BodyPitch &MicroVia Count Size

Min. I. 5/5– 10/10um ≤40um I. Standalone:≤ N/A N/A40/80umStaggered

/ /II. < 5/5um 250um

II. Integration:N/A

/ /



OrganicInterposer/OrganicInterposerLikeOrganicInterposer/OrganicInterposerLike

TypeIII?????TypeI:StandAlone TypeII:Integration

BrainstormingBrainstorming…

CollaborationBetweenEndCustomers,OSATsAndSubstrateSuppliersIsEssentialAndCritical El t i l A d M h i l F ti lit ElectricalAndMechanicalFunctionality 1st Leveland2nd LevelInterconnectJointReliability



P M d l R di

DevelopmentTimeline ProcessModuleReadiness Line/Space

10/10 um Q4/2012 10/10um Q4/2012 8/8um Q4/2013 5/5um Q4/2014 < 5/5um TBD

ThroughVia 40um Q4/2013 40um Q4/2013 20um Q4/2014

MaterialModuleReadiness CoreMaterial Q4/2013;Q4/2014 DielectricMaterial Q4/2013;Q4/2014



SummaryandConclusionSummaryandConclusion OrganicInterposerHasPotentialToBecomeHigh

DensityInterconnectSubstrate CompetitiveCostAndLoadsOfFineFeatures

TheKeysToSuccessIncludeCoreAndDielectricMaterials,FineL/SAndViaDrillingTechnology,Etc. Fab.ProcessEquipment/ConceptPlaysAnImportantRole

LowCostTool/Equipment,SuchAsSteppers,LDI,ViaForming,/ q p pp gEtc.AreNeededToBeDeveloped



SummaryandConclusionSummaryandConclusion LowCostOrganicInterposerCanBeMaterializedIn

TheNearFutureWithTheEffortOfEntireIndustryW ki T d Thi Di tiWorkingTowardThisDirection

UnimicronWelcomesBusinessPartners’CollaborationToFutureAdvanceSubstrateDevelopmentPrograms



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