Enabling 2D Material With Direct Write Lithography
1
Starting with a substrate that includes randomly distributed 2D material, fiducial marks can be placed by direct milling or lift off process. Enabling 2D Material With Direct Write Lithography Andres Trucco and Brent P. Gila Nanoscale Research Facility, University of Florida, Gainesville, Florida Sample is coated with ebeam resist (300nm) and GDS file calibrated to existing milled fiducial marks. After write is finished, sample is developed and ready for metallization. E-beam Lithography More and more researchers are turning to 2D materials as a solution for future electronic devices and sensors. Many of these 2D materials are supplied by transferring flakes onto a substrate or growing islands of CVD materials. We have been able to take advantage of our unique tool set of Raith ionLINE (ion beam lithography), Raith 150 (electron beam lithography), and the Heidelberg DWL66 (laser lithography) and when employed in concert, we are able to mill, map, and process randomly distributed 2D materials into functional devices on substrates up to 100mm diameter. Substrate Preparation Abstract Once fiducial marks are in place, entire substrate is mapped via SEM with the Raith 150. Images are tiled together. GDS of fiducial marks is then overlaid over SEM tiled image. EX: 1mm 2 image (200um field) time = 125s 1cm 2 image (200um field) time = 3.4hrs both at 150nm 2 /pix resolution (500x) SEM Mapping Areas of interest are identified and GDS designs placed over material image using GDS/Image overlay. GDS Image Overlay Nanoscale Research Facility http://rsc.aux.eng.ufl.edu/ f Metal deposition is done via e-beam evaporation. In this case, 20nm of Ti and 50 nm of Ni are deposited and lifted using standard lift off techniques. Metal Lift Off 3um 5um 5um 5um 56 images . 50um WF. 2000X Mag. 5s per image 10nm 2 /pix resolution 182 images. 50um WF. 2000X. 16 min State-of-the-art ionLINE lithography system is capable of milling long areas without stitching by implementing Fixed Beam Moving Stage (FBMS) mode. Multi-species ion source (currently AuSi) and IBID available. Stitch-free Isolation Milling Open circuit I/V Open circuit I/V Ti(20nm)/Ni(50nm) Pads on SiO2(300nm) Ti(20nm)/Ni(50nm) Pads on SiO2(300nm) Nanoscale Research Facility • Class 100-1000 cleanroom for nanofabrication and bio/nano processing (7000sqft) with full 100mm wafer capability (some 150mm capability) • Labs for nanofabrication, advanced imaging, and characterization of nanostructures • Labs for device assembly and processing, and sample preparation and characterization • Separate fabrication labs for education • Full time engineering staff to assist with or conduct the fabrication processing Open to academic, government and commercial customers https://nrf.aux.eng.ufl.edu/ or 352-846-2626
Transcript of Enabling 2D Material With Direct Write Lithography
Starting with a substrate that includes randomly distributed 2D material, fiducial marks can be placed by direct milling or lift off process.
Enabling 2D Material With Direct Write Lithography Andres Trucco and Brent P. Gila
Nanoscale Research Facility, University of Florida, Gainesville, Florida
Sample is coated with ebeam resist (300nm) and GDS file calibrated to existing milled fiducial marks. After write is finished, sample is developed and ready for metallization.
E-
be
am L
ith
ogr
aph
y
More and more researchers are turning to 2D materials as a solution for future electronic devices and sensors. Many of these 2D materials are supplied by transferring flakes onto a substrate or growing islands of CVD materials. We have been able to take advantage of our unique tool set of Raith ionLINE (ion beam lithography), Raith 150 (electron beam lithography), and the Heidelberg DWL66 (laser lithography) and when employed in concert, we are able to mill, map, and process randomly distributed 2D materials into functional devices on substrates up to 100mm diameter.
Sub
stra
te P
rep
arat
ion
A
bst
ract
Once fiducial marks are in place, entire substrate is mapped via SEM with the Raith 150.
Images are tiled together.
GDS of fiducial marks is then overlaid over SEM tiled image.
EX: 1mm2 image (200um field) time = 125s 1cm2 image (200um field) time = 3.4hrs both at 150nm2/pix resolution (500x)
SEM
Map
pin
g Areas of interest are identified and GDS designs placed over material image using GDS/Image overlay.
G
DS
Imag
e O
verl
ay
Nanoscale
Research
Facility http://rsc.aux.eng.ufl.edu/
f
Metal deposition is done via e-beam evaporation.
In this case, 20nm of Ti and 50 nm of Ni are deposited and lifted using standard lift off techniques.
M
etal
Lif
t O
ff
3um 5um 5um
5um
56 images . 50um WF. 2000X Mag. 5s per image 10nm2/pix resolution
182 images. 50um WF. 2000X. 16 min
State-of-the-art ionLINE lithography system is capable of milling long areas without stitching by implementing Fixed Beam Moving Stage (FBMS) mode. Multi-species ion source (currently AuSi) and IBID available.
St
itch
-fre
e Is
ola
tio
n M
illin
g
Open circuit I/V Open circuit I/V
Ti(20nm)/Ni(50nm) Pads on SiO2(300nm) Ti(20nm)/Ni(50nm) Pads on SiO2(300nm)
Nan
osc
ale
Re
sear
ch F
acili
ty •Class 100-1000 cleanroom for nanofabrication and bio/nano processing (7000sqft) with
full 100mm wafer capability (some 150mm capability)
• Labs for nanofabrication, advanced imaging, and characterization of nanostructures
• Labs for device assembly and processing,
and sample preparation and characterization
•Separate fabrication labs for education
•Full time engineering staff to assist with or
conduct the fabrication processing
Open to academic, government and commercial customers
https://nrf.aux.eng.ufl.edu/ or 352-846-2626
