SARDAR RAJA COLLEGE OF ENGINEERING

DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING

MICRO LESSON PLAN

SUBJECT NAME : ELECTRIC CIRCUITS AND ELECTRON DEVICESSUBJECT CODE : EC2151

YEAR /SEM : FIRST YEAR / II

BRANCH : CSE & ECE

Handled By

Mr.V.KALIMUTHUAsst.Prof / ECE

E-MAILID:v.kalimuthuamutha@gmail.com

EC2151 ELECTRIC CIRCUITS AND ELECTRON DEVICES L T P C

3 1 0 4

TEXT BOOKS:

REFERENCE BOOKS:

4. J.Gnanavadivel and C.Senthil Kumar “Electric circuits and ElectronDevices”,First edition:2009.

HOURS WEEKNO

TOPIC T/ RBOOK

NO

PAGE.NO A/ VCLASS

UNIT-I-CIRCUIT ANALYSIS TECHNIQUES

1.

I

Kirchoff’s current and voltage laws T1 26

2.

3.

4.

Series and parallel connection ofindependent sources-R,Land C

T1

28T1

T1

5.

6.

7.

8.

9.

10.

II Network theorems-Nortontheorem,Thevenin theorem,Maximumpower transfer theorem,Super position .

T1 29 to 33

T1 114 to 127 Yes

11.

12.

III

Duality

T1 126

13.

14.

15.

16.

Star-Delta conversion

T1 117

UNIT II –TRANSIENT RESONANCE IN RLC CIRCUITS

17.

18

19.

20.

IV

Basic RC,RL and RLC Circuits and theirresponses to pulse and sinusoidal input.

T1 63 to 75

87 to 92

21.

22.

23.

24. V

Frequency response

Series and Parallel resonance

T1 165 to 177

T1 165 to 177

25.

26. Q-factor

T1 165 to 177

27.

28.

29.

30.

31.

VI

Single tuned and double tuned circuits.

R4 2.139 to 2.142

yes

UNIT III - SEMICONDUCTOR DIODES

32

33

34 VII

Review of intrinsic and extrinsicsemiconductors

T1 67 to 82 yes

35 Theory of PN junction diode T1 92 to 97

36 Energy band structure T1 98 to 100

37 Current equation T1 104 to 105

38

39 Space charge and diffusion capacitance T1 107 to 109

40 Effect of temperature and breakdown

41 VIII mechanism T1 111

42

43 Zener diode and its characteristics T1 123

UNIT IV -TRANSISTORS

44

45

IX

Principle of operation of PNP and NPNtransistors

T1 151

yes

46

47

48

49

Study of CE,CC,CB Configuration andcomparision of their characteristics

T1 154 to 161

50

X

Breakdown in Transistors T1 171

51

52

53

Operation and comparision of P-channeland N-channel JFET.

T1 &R4

197,212 &4.53

54

XI

Drain current equation T1 202

55

56

MOSFET-Enhancement and Depletiontypes-Structure and operation

T1 206,207

57

58

Comparision of BJT with MOSFET-Thermal effect on MOSFET.

T1

205,212

210

UNIT V – SPECIAL SEMICONDUCTOR DEVICES(Qualitative treatment only)

59

60

XII

Tunnel diodes-PIN Diode ,Varactordiode

T1 136,144,125

61

62

SCR Characteristics and two transistorequivalent model

T1 227

yes

63

64 UJT-DIAC and TRIAC T1 584,236,237

65

66

67 XIII

LASER,CCD,Photodiode,phototransistor T1 &R4

146 &5.34,5.37,5.41.

68

69

70

Photoconductive and Photovoltaic cells-LED,LCD

T1 &R4

775,781,789& 5.43 to

5.46,5.49 to5.51

ASSIGNMENT-I

1.Find the current through 6 ohm resistance using superposition theorem.

2. Find the current through 10 ohm resistance using Norton’s theorem

ASSIGNMENT-II

1.Derive the expression for step response of series R-L Circuit.

2.In how many seconds after t=0 has the current i(t) become one half of its initialvalue in the given circuit shown in fig.

3.Derive the expression for step response of series RLC Circuit.

ASSIGNMENT-III

1.Derive the diode current equation of PN Junction diode.

2.Explain about operation and characteristics of PN junction diode.

3. Explain about operation and characteristics of Zener diode

ASSIGNMENT-IV

1.Explain the operation of BJT and its types.

2.With the neat diagram ,explain the operation and input /output

Characteristics of CE Configuration.

3.With the neat diagram ,explain the operation of enhancement and

depletion type MOSFET.

ASSIGNMENT-V

1.Explain the operation and characteristics of tunnel diode.

2. Explain the operation and characteristics of SCR.

3. Explain the operation and characteristics of LASER.

MAXIMUM POSSIBLE QUESTIONS

UNIT-I-CIRCUIT ANALYSIS TECHNIQUES

PART-A(2 Marks)

11. A resistor 3.6ohm is connected in series with another of 4.56ohm.What resistance mustbe placed across 3.6ohm so that total resistance is 6ohm.

12.State kirchoff’s current and voltage laws.

13.State Reciprocity theorem.

PART-B

UNIT II –TRANSIENT RESONANCE IN RLC CIRCUITS

PART-A (2Marks)

10. Define RMS Value.

11. Define power factor.

12. What is an transient?

13. Define transient time.

14. Define transient response.

15. Define natural response.

PART-B

UNIT III - SEMICONDUCTOR DIODES

PART-A(2Marks)

PART-B

6.Derive the expression for energy band structure.

7.Explain about intrinsic and extrinsic semiconductors.

8.Explain about operation and characteristics of PN junction diode.

9. Explain about operation and characteristics of Zener diode

UNIT IV –TRANSISTORS

PART-A(2Marks)

PART-B

8. With the neat diagram ,explain the operation and input /output

Characteristics of CE Configuration.

UNIT V – SPECIAL SEMICONDUCTOR DEVICES (Qualitative treatment only)

PART-A (2 Marks)

PART-B

1.Describe the operation of zener diode and explain its characteristics.

2.Explain the operation and characteristics of tunnel diode.

3. Explain the operation and characteristics of SCR.

4. Explain the operation and characteristics of TRIAC.

5. Explain the operation and characteristics of DIAC.

6. Explain the operation and characteristics of LASER.

7.Describe the operation of LED and LCD.

8.Write short notes on PIN Diode and Varactor diode.