EE 330 Lecture 12 Back-End Processing Semiconductor ...

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EE 330 Lecture 12 Back-End Processing Semiconductor Processes Devices in Semiconductor Processes Resistors Diodes Capacitors MOSFET BJT

Transcript of EE 330 Lecture 12 Back-End Processing Semiconductor ...

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EE 330Lecture 12

Back-End Processing

Semiconductor Processes

Devices in Semiconductor Processes• Resistors

• Diodes

• Capacitors

• MOSFET

• BJT

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As a courtesy to fellow classmates, TAs, and the instructor

Wearing of masks during lectures and in the laboratories for this course would be appreciated irrespective of vaccination status

Photo courtesy of the director of the National Institute of Health ( NIH)

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Exam 1 ScheduleExam 1 will be given on Friday September 23

Format: Open-Book, Open Notes

Exam will be posted at 9:00 a.m. on the class WEB site and will be due at 1:00 p.m. as a .pdf upload on CANVAS

It will be structured to be a 50-minute closed-book closed-notes exam but administered as an open-book, open-notes exam with a 4 hour open interval so reserving the normal lecture period for taking the exam should provide adequate time

For anyone with approved special accommodations, the 4-hour open interval should cover extra time allocations but if for any reason this does not meet special accommodation expectations, please contact the instructor by Monday Sept. 14 if alternative accommodations are requested.

Honor System Expected

It is expected that this exam be an individual effort and that students should not have input in any form from anyone else during the 4-hour open interval of the exam except from the course instructor who will be responding to email messages from 11:00 a.m. to 1:00 p.m. on the date of the exam.

Special Accommodations

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Capacitance in Interconnects

Equivalent Circuit

C12=CD12 A5

C1S=CD1S (A1+A2+A5)

C2S=CD2S (A3+A4)

SubstrateMetal 1

Metal 2

A1 A2

A3

A4

A5

Substrate

C12

C2S

C1S

M1

M2

SUB

Review from Last Lecture

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Resistance in Interconnects

L

W

HA

B

D

==

H

ρ

W

A

LR

H << W and H << L in most processes

Interconnect behaves as a “thin” film

Sheet resistance often used instead of conductivity to characterize film

R□=ρ/H R=R□[L / W]

Review from Last Lecture

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Review from Last Lecture

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Mask Fabrication

Epitaxy

Photoresist

Etch

Strip

Planarization

Deposit or Implant

Grow or Apply

Wafer Probe

Die Attach

Wafer Dicing

Wire Attach (bonding)

Package

Test

Wafer Fabrication

Ship

Fro

nt

En

dB

ack E

nd

Generic Process Flow

Back End Processing

Recall:

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Front End Process Integration for Fabrication of ICs

Wafer Fabrication Mask Fabrication

Epitaxy

Photoresist

Deposit or Implant Etch

Strip

Planarize

Back End Processing

On

ce

fo

r e

ach

ma

sk

Recall:

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Front-End Process Flow

• Front-end processing steps analogous to a “recipe” for manufacturing an integrated circuit

• Recipes vary from one process to the next but the same basic steps are used throughout the industry

• Details of the recipe are generally considered proprietary

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Back-End Process Flow

Wafer Probe

Die Attach

Wafer Dicing

Wire Attach (bonding)

Package

Test

Ship

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Wafer Dicing

www.renishaw.com

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Die Attach

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Die Attach

PackagePackaged Die

Old Technology but Good for Illustration

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Die Attach

Lead Frame (for injection molded package)

Prior to Die Attachment

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Die Attach

1. Eutectic

2. Pre-form

3. Conductive Epoxy

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Die Attach

1. Eutectic

2. Pre-form

3. Conductive Epoxy

Die attached showing bonding wires and likely solder preform or epoxy residue

Note alignment is not perfect

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NS16032

http://cpu-ns32k.net/Diephotos.html

Die Attach

Note double bonding wires

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Electrical Connections (Bonding)

Number of connections can become large (even much larger than shown here)

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Electrical Connections (Bonding)

• Wire Bonding

• Bump Bonding

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Wire Bonding

Wire – gold or aluminum

25 in diameter

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Wire Bonding

Excellent Annimation showing process at :

http://www.kns.com/_Flash/CAP_BONDING_CYCLE.swf

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Wire Bonding

www.kns.com

Ball Bond

Wedge Bond

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Ball Bonding Steps

www.kns.com

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Ball Bonding Tip

Approx 25µ

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Wire Bonding

Ball Bond Termination Bond

Ball Bond Photograph

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Bump Bonding

www.secap.org

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Packaging

1. Many variants in packages now available

2. Considerable development ongoing on developing packaging technology

3. Cost can vary from few cents to tens of dollars

4. Must minimize product loss after packaged

5. Choice of package for a product is serious business

6. Designer invariably needs to know packaging plans and package models

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Packaging

www.necel.com

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Packaging

www.necel.com

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Pin Pitch Varies with Package Technology

From Wikipedia, Sept 20, 2010http://en.wikipedia.org/wiki/List_of_chip_carriers

http://www.electroiq.com/index/display/packaging-article-

display/234467/articles/advanced-packaging/volume-

14/issue-8/features/the-back-end-process/materials-and-

methods-for-ic-package-assemblies.htm

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Many standard packages available today:http://www.interfacebus.com/Design_Pack_types.html

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Considerable activity today and for years to

come on improving packaging technology

• Multiple die in a package

• Three-dimensional chip stacking

• Multiple levels of interconnect in stacks

• Through silicon via technology

• Power and heat management

• Cost driven and cost constrained

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The following few slides come from a John Lau presentation

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Back-End Process Flow

Wafer Probe

Die Attach

Wafer Dicing

Wire Attach (bonding)

Package

Test

Ship

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Testing of Integrated Circuits

Most integrated circuits are tested twice during production

• Wafer Probe Testing

• Packaged Part Testing

– Quick test for functionality – Usually does not include much parametric testing– Relatively fast and low cost test– Package costs often quite large– Critical to avoid packaging defective parts

– Testing costs for packaged parts can be high– Extensive parametric tests done at package level for many parts– Data sheet parametrics with Max and Min values are usually

tested on all Ics– Data sheet parametrics with Typ values are seldom tested– Occasionally require testing at two or more temperatures but

this is costly– Critical to avoid packaging defective parts

Bench testing used to qualify parts for production

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Bench Test Environment

Photos from www postings and Google image search42

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Test LAB

Photo courtesy of Texas Instruments

Bench Test Environment

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Probe Test

Photos from www postings and Google image search

Probes on section of probe card

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Probe Test

Photos from www postings and Google image search

Pad showing probe marks Pad showing bonding wire

Die showing wire bonds to package cavity

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Probe Test

Production probe test facility

Photos from www postings and Google image search

Goal to Identify defective die on wafer

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Typical ATE System (less handler)

Work Station

Test Head

Main

Frame

Automated Test Equipment (ATE)

ATE

Final Test

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Device Interface Board - DIB

(Load Board)

DIB

Socket(Contactor)Cavity

(for DUT) DIBs Vary Considerably from one ATE Platform to

another and are often personalized for a particular DUT

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Octal Site DIB Flex Octal (Teradyne)

Top

Bottom

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Atlas (SSI Robotics)

Final Test

Typical ATE Configuration

Tester

Test Head

Handler

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Basic Semiconductor Processes

MOS (Metal Oxide Semiconductor)

1. NMOS n-ch

2. PMOS p-ch

3. CMOS n-ch & p-ch• Basic Device: MOSFET

• Niche Device: MESFET

• Other Devices: DiodeBJTResistorsCapacitorsSchottky Diode

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Basic Semiconductor Processes

1. T2L

2. ECL

3. I2L

4. Linear ICs– Basic Device: BJT (Bipolar Junction Transistor)

– Niche Devices: HBJT (Heterojunction Bipolar Transistor)HBT

– Other Devices: DiodeResistorCapacitor

Schottky DiodeJFET (Junction Field Effect Transistor)

Bipolar

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Basic Semiconductor Processes

• Thin and Thick Film Processes– Basic Device: Resistor

• BiMOS or BiCMOS– Combines both MOS & Bipolar Processes– Basic Devices: MOSFET & BJT

• SiGe– BJT with HBT implementation

• SiGe / MOS– Combines HBT & MOSFET technology

• SOI / SOS (Silicon on Insulator / Silicon on Sapphire)• Twin-Well & Twin Tub CMOS

– Very similar to basic CMOS but more optimal transistor char.

Other Processes

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Devices in Semiconductor Processes• Standard CMOS Process

– MOS Transistors• n-channel• p-channel

– Capacitors– Resistors– Diodes– BJT ( decent in some processes)

• npn• pnp

– JFET (in some processes)• n-channel• p-channel

• Standard Bipolar Process– BJT

• npn• pnp

– JFET • n-channel• p-channel

– Diodes– Resistors– Capacitors

• Niche Devices– Photodetectors (photodiodes, phototransistors, photoresistors)– MESFET– HBT– Schottky Diode (not Shockley)

– MEM Devices– TRIAC/SCR– ….

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Basic Devices• Standard CMOS Process

– MOS Transistors• n-channel• p-channel

– Capacitors– Resistors– Diodes– BJT (in some processes)

• npn• pnp

– JFET (in some processes)• n-channel• p-channel

• Niche Devices– Photodetectors– MESFET– Schottky Diode (not Shockley)

– MEM Devices– Triac/SCR– ….

Primary Consideration

in This Course

Some Consideration in

This Course

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Stay Safe and Stay Healthy !

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End of Lecture 12