Digital Integrated Circuits© Prentice Hall 1995 Devices Jan M. Rabaey The Devices.

Digital Integrated Circuits © Prentice Hall 1995DevicesDevices

Jan M. Rabaey

The Devices


Goal of this chapter

• Present intuitive understanding of device operation

• Introduction of basic device equations

• Introduction of models for manual analysis

• Introduction of models for SPICE simulation

• Analysis of secondary and deep-sub-microneffects

• Future trends


The Diode

n

p

p

n

B A SiO2Al

A

B

Al

A

B

Cross-section of pn-junction in an IC process

One-dimensionalrepresentation diode symbol


Depletion Region

hole diffusionelectron diffusion

p n

hole driftelectron drift

ChargeDensity

Distancex+

-

ElectricalxField

x

PotentialV

W2-W1

(a) Current flow.

(b) Charge density.

(c) Electric field.

(d) Electrostaticpotential.


Diode Current


Forward Bias

x

pn0

np0

-W1 W20

p n(W

2)

n-regionp-region

Lp

diffusion


Reverse Bias

x

pn0

np0

-W1 W20n-regionp-region

diffusion


Diode Types

x

x

pn0

pn0

Wn

pn(x)

pn(x)

Wn

Short-base Diode

Long-base Diode

(standard in semiconductordevices)


Models for Manual Analysis

VD

ID = IS(eVD/T – 1)+

–

VD

+

–

+

–VDon

ID

(a) Ideal diode model (b) First-order diode model


Junction Capacitance


Diffusion Capacitance


Diode Switching Time

Vsrc

t = 0

V1

V2

VD

Rsrc

t = T

ID

Time

VD

ON OFF ON

Space chargeExcess charge


Secondary Effects

–25.0 –15.0 –5.0 5.0

VD (V)

–0.1

I D (A

)0.1

0

0

Avalanche Breakdown


Diode Model

ID

RS

CD

+

-

VD


SPICE Parameters


The MOS Transistor

n+n+

p-substrate

Field-Oxyde

(SiO2)

p+ stopper

Polysilicon

Gate Oxyde

DrainSource

Gate

Bulk Contact

CROSS-SECTION of NMOS Transistor


Cross-Section of CMOS Technology


MOS transistors Types and Symbols

D

S

G

D

S

G

G

S

D D

S

G

NMOS Enhancement NMOS

PMOS

Depletion

Enhancement

B

NMOS withBulk Contact


Threshold Voltage: Concept

n+n+

p-substrate

DSG

B

VGS

+

-

Depletion

Region

n-channel


The Threshold Voltage


Current-Voltage Relations

n+n+

p-substrate

D

SG

B

VGS

xL

V(x) +–

VDS

ID

MOS transistor and its bias conditions


Current-Voltage Relations


Transistor in Saturation

n+n+

S

G

VGS

D

VDS > VGS - VT

VGS - VT+-


I-V Relation

0.0 1.0 2.0 3.0 4.0 5.0

VDS (V)

1

2

I D (

mA

)

0.0 1.0 2.0 3.0VGS (V)

0.010

0.020

÷ I

D

VT

SubthresholdCurrent

Triode Saturation

VGS = 5V

VGS = 3V

VGS = 4V

VGS = 2V

VGS = 1V

(a) ID as a function of VDS (b) ID as a function of VGS

(for VDS = 5V).

Sq

ua

re D

ep

end

en

ce

VDS = VGS-VT

NMOS Enhancement Transistor: W = 100 m, L = 20 m


A model for manual analysis


Dynamic Behavior of MOS Transistor

DS

G

B

CGDCGS

CSB CDBCGB


The Gate Capacitance


Average Gate Capacitance

Most important regions in digital design: saturation and cut-off

Different distributions of gate capacitance for varying

operating conditions


Diffusion Capacitance


Junction Capacitance


Linearizing the Junction Capacitance

Replace non-linear capacitance bylarge-signal equivalent linear capacitance

which displaces equal charge over voltage swing of interest


The Sub-Micron MOS Transistor

• Threshold Variations

• Parasitic Resistances

• Velocity Sauturation and Mobility Degradation

• Subthreshold Conduction

• Latchup


Threshold Variations

VT

L

Long-channel threshold Low VDS threshold

Threshold as a function of the length (for low VDS)

Drain-induced barrier lowering (for low L)


Parasitic Resistances

W

LD

Drain

Draincontact

Polysilicon gate

DS

G

RS RD

VGS,eff


Velocity Saturation (1)

EV/m)Esat

n (c

m/s

ec)

sat = 107

Constant mobility (slope = )

constant velocity

EtV/m)

n (c

m2 /V

s)

n0

(b) Mobility degradation(a) Velocity saturation

0

700

250


Velocity Saturation (2)

VDS (V)

I D (

mA

)

Lin

ea

r D

ep

en

de

nc

e

VGS = 5

VGS = 4

VGS = 3

VGS = 2

VGS = 1

0.0 1.0 2.0 3.0 4.0 5.0

0.5

1.0

1.5

(a) ID as a function of VDS (b) ID as a function of VGS(for VDS = 5 V).

0.0 1.0 2.0 3.0VGS (V)

0

0.5

I D (

mA

)

Linear Dependence on VGS


Sub-Threshold Conduction

0.0 1.0 2.0 3.0VGS (V)

10 12

10 10

10 8

10 6

10 4

10 2

ln(I

D)

(A)

Subthreshold exponential region

Linear region

VT


Latchup

(a) Origin of latchup (b) Equivalent circuit

VDD

Rpsubs

Rnwell p-source

n-source

n+ n+p+ p+ p+ n+

p-substrateRpsubs

Rnwell

VDD

n-well


SPICE MODELS

Level 1: Long Channel Equations - Very Simple

Level 2: Physical Model - Includes VelocitySaturation and Threshold Variations

Level 3: Semi-Emperical - Based on curve fittingto measured devices

Level 4 (BSIM): Emperical - Simple and Popular


MAIN MOS SPICE PARAMETERS


SPICE Parameters for Parasitics


SPICE Transistors Parameters


Fitting level-1 model for manual analysis

VGS = 5 V

VDS = 5 V VDS

ID

Long-channel

approximation

Short-channelI-V curve

Region of

matching

Select k’ and such that best matching is obtained @ Vgs= Vds = VDD


Technology Evolution


Bipolar Transistor

n-epitaxy

p-substrate

n+ buried layer

p+

isolation

n+ p+

pn+

E B C

p+

E C

B

n+ p n

(a) Cross-sectional view.

(b) Idealized transistor structure.


Schematic Symbols and Sign Conventions

C

E

B

IB

IE

IC+

–

+

+

–

–

VBC

VBE

VCE

C

E

B

IB

IE

IC+

–

+

+

–

–

VBC

VBE

VCE

(a) npn (b) pnp


Operations Modes


Forward Active Operation

x

E B C

WB

Carrier Concentration

DepletionRegions

0 W

pe0

pc0

nb0

nb(0)


Current Components

x

E B C

ICIE

IB

1

2 3

electrons

holes


Reverse Active

x

E B C

WB


0 W

pe0nb0

nb(0)

pc0

nb(W)


Saturation Mode

x

E B C

WB


0 W

pe0

nb0

nb(0)

pc0QS

QAnb(W)


Cutoff

x

E B C

WB


0 W

pe0

nb0nb(0)pc0

nb(W)


Bipolar Transistor Operation

0.0 2.0VCE (V)

0

5

10

15

I C(m

A)

-3.0 -1.0

VCE (V)

-0.5

I C (

mA

)

IB=100 A

IB=75 A

IB=50 A

IB=25 A

0

-0.25

IB=25 A

IB=50 A

IB=75 A

IB=100 A

Reverse Operation

Forward Operation

Active

Saturation


A Model for Manual Analysis

E

CB

FIB

IB

+

–

VBE

IB = IS(eVBE/T – 1)E

CB

FIB

IB

+–VBE(on)

(a) Forward-active (b) Forward-active (simplified)

E

CB

IB

+–VBE(sat)

(c) Forward-saturation

+– VCE(sat)

IC < FIB


Capacitive Model for Bipolar Transistor

C

E

B

QF

QR

Cbe

Cbc

S

Ccs

collector-substratejunction capacitance

base-emitterbase-collector

junction capacitances

base charge


Junction Capacitances


Base Charge - Diffusion Capacitance


Bipolar Transistors - Secondary Effects

• Early Voltage

• Parasitic Resistances

• Beta Variations


Early Voltage

ForwardActive

Saturation

VA

VCE

IC

VBE3

VBE2

VBE1


Parasitic Resistance

n-epitaxy

p-substrate

n+ buried layer

p+

isolation

n+ p+p n+

E B C

p+rC1

rC3

rB

rC2

rE


Beta Variations

VBE (linear)

ln (I)

IC

IB

F

High Level Injection

Recombination

IKF


SPICE models for Bipolar


Main Bipolar Transistor SPICE Models


Spice Parameters for Parasitics


SPICE Transistor Parameters


Process Variations

Devices parameters vary between runs and even on the same die!

Variations in the process parameters, such as impurity concentration den-sities, oxide thicknesses, and diffusion depths. These are caused by non-uniform conditions during the deposition and/or the diffusion of theimpurities. This introduces variations in the sheet resistances and transis-tor parameters such as the threshold voltage.

Variations in the dimensions of the devices, mainly resulting from thelimited resolution of the photolithographic process. This causes (W/L)variations in MOS transistors and mismatches in the emitter areas ofbipolar devices.


Impact of Device Variations

1.10 1.20 1.30 1.40 1.50 1.60

Leff (in mm)

1.50

1.70

1.90

2.10

De

lay

(nse

c)

–0.90 –0.80 –0.70 –0.60 –0.50

VTp (V)

1.50

1.70

1.90

2.10

De

lay

(nse

c)

Delay of Adder circuit as a function of variations in L and VT

Digital Integrated Circuits© Prentice Hall 1995 Devices Jan M. Rabaey The Devices.

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Transcript of Digital Integrated Circuits© Prentice Hall 1995 Devices Jan M. Rabaey The Devices.