Copyright Agrawal, 2007 ELEC5270/6270 Spring 09, Lecture 4 1 ELEC 5270-001/6270-001 Spring 2009...

Copyright Agrawal, 2007Copyright Agrawal, 2007 ELEC5270/6270 Spring 09, Lecture 4ELEC5270/6270 Spring 09, Lecture 4 11

ELEC 5270-001/6270-001 Spring 2009ELEC 5270-001/6270-001 Spring 2009Low-Power Design of Electronic CircuitsLow-Power Design of Electronic Circuits

Power Dissipation of CMOS CircuitsPower Dissipation of CMOS Circuits

Vishwani D. AgrawalVishwani D. AgrawalJames J. Danaher ProfessorJames J. Danaher Professor

Dept. of Electrical and Computer EngineeringDept. of Electrical and Computer EngineeringAuburn University, Auburn, AL 36849Auburn University, Auburn, AL 36849

[email protected]://www.eng.auburn.edu/~vagrawal/COURSE/E6270_Spr09/course.html


nMOS Logic (Inverters)nMOS Logic (Inverters)

Saturated-load nMOS Pseudo-nMOS

For logic 1 input, continuous static power is dissipated.

R. C. Jaeger and T. N. Blalock, Microelctronic Circuit Design, Third Edition, McGraw-Hill, 2006, Chapter 6.


CMOS Logic (Inverter)CMOS Logic (Inverter)

F. M. Wanlass and C. T. Sah, “Mamowatt Logic using Field-Effect Metal-Oxide-Semiconductor Triodes,” IEEE International Solid-State Circuits Conference Digest, vol. IV, February 1963, pp. 32-33.

No static leakage path exists for either 1 or 0 input.


Components of PowerComponents of Power

DynamicDynamicSignal transitionsSignal transitions

Logic activityLogic activityGlitchesGlitches

Short-circuitShort-circuitStaticStatic

LeakageLeakagePtotal = Pdyn + Pstat

= Ptran + Psc + Pstat


Power of a Transition: Power of a Transition: PPtrantran

VVDDDD

GroundGround

CL

Ron

R = large

vi (t) vo(t) ic(t)


Charging of a CapacitorCharging of a Capacitor

V C

R

i(t) v(t)

Charge on capacitor, q(t) = C v(t)

Current, i(t) = dq(t)/dt = C dv(t)/dt

t = 0


i(t) = C dv(t)/dt = [V – v(t)] /R dv(t) V – v(t) ─── = ───── dt RC

dv(t) dt∫ ───── = ∫ ──── V – v(t) RC

- t ln [V – v(t)] = ── + A

RC

Initial condition, t = 0, v(t) = 0 → A = ln V - t

v(t) = V [1 – exp(───)]

RC


- t v(t) = V [1 – exp( ── )]

RC

dv(t) V - ti(t) = C ─── = ── exp( ── )

dt R RC


Total Energy Per Charging Total Energy Per Charging Transition from Power SupplyTransition from Power Supply

∞ ∞ V2 - tEtrans = ∫ V i(t) dt = ∫ ── exp( ── ) dt

0 0 R RC

= CV2


Energy Dissipated per Transition in Energy Dissipated per Transition in ResistanceResistance

∞ V2 ∞ -2tR ∫ i2(t) dt = R ── ∫ exp( ── ) dt 0 R2 0 RC

1= ─ CV2

2


Energy Stored in Charged Energy Stored in Charged Capacitor Capacitor

∞ ∞ - t V - t∫ v(t) i(t) dt = ∫ V [1-exp( ── )] ─ exp( ── ) dt0 0 RC R RC

1 = ─ CV2

2


Transition PowerTransition PowerGate output rising transitionGate output rising transition

Energy dissipated in pMOS transistor = Energy dissipated in pMOS transistor = CVCV22/2/2Energy stored in capacitor = Energy stored in capacitor = CVCV22/2/2

Gate output falling transitionGate output falling transitionEnergy dissipated in nMOS transistor = Energy dissipated in nMOS transistor = CVCV22/2/2

Energy dissipated per transition = Energy dissipated per transition = CVCV22/2/2Power dissipation:Power dissipation:

Ptrans = Etrans α fck = α fck CV2/2 α = activity factor






LeakageLeakagePtotal = Pdyn + Pstat

= Ptran + Psc + Pstat


Short Circuit Power of a Transition: Short Circuit Power of a Transition: PPscsc

VVDDDD

GroundGround

CL

vi (t) vo(t) isc(t)


Short Circuit Current, Short Circuit Current, iisc sc ((tt))

Time (ns)0 1

Isc

Volt

VDD

isc(t)

0

Vi (t)Vo(t)

VDD - VTp

VTn

tB tE

Iscmaxf

p-transistor starts conducting

n-transistor cuts-off


Peak Short Circuit CurrentPeak Short Circuit Current

Increases with the size (or gain, Increases with the size (or gain, ββ) of ) of transistorstransistors

Decreases with load capacitance, Decreases with load capacitance, CCLL

Largest when Largest when CCL L = 0= 0 Reference: M. A. Ortega and J. Figueras, Reference: M. A. Ortega and J. Figueras,

“Short Circuit Power Modeling in Submicron “Short Circuit Power Modeling in Submicron CMOS,” CMOS,” PATMOS PATMOS ’96, Aug. 1996, pp. 147-’96, Aug. 1996, pp. 147-166.166.


Short-Circuit Energy per TransitionShort-Circuit Energy per Transition

EEscf scf == ∫∫tBtB

ttE E VVDDDD i iscsc((tt))dt dt

== ((ttEE – t – tBB)) I Iscmaxf scmaxf VVDD DD / / 22

EEscfscf == ttff ((VVDD DD - - ||VVTpTp|| - V- VTnTn)) I Iscmaxf scmaxf / / 22

EEscrscr == ttrr ((VVDD DD - - ||VVTpTp|| - V - VTnTn)) I Iscmaxr scmaxr / / 22

EEscfscf = = EEscrscr == 0,0, when V when VDDDD = |= |VVTpTp|| ++ V VTnTn


Short-Circuit EnergyShort-Circuit Energy

Increases with rise and fall times of inputIncreases with rise and fall times of inputDecreases for larger output load Decreases for larger output load

capacitancecapacitanceDecreases and eventually becomes zero Decreases and eventually becomes zero

when when VVDDDD is scaled down but the threshold is scaled down but the threshold

voltages are not scaled downvoltages are not scaled down


Short-Circuit Power CalculationShort-Circuit Power Calculation

Assume equal rise and fall timesAssume equal rise and fall timesModel input-output capacitive coupling Model input-output capacitive coupling

(Miller capacitance)(Miller capacitance)Use a spice model for transistorsUse a spice model for transistors

T. Sakurai and A. Newton, “Alpha-power Law T. Sakurai and A. Newton, “Alpha-power Law MOSFET model and Its Application to a MOSFET model and Its Application to a CMOS Inverter,” CMOS Inverter,” IEEE J. Solid State CircuitsIEEE J. Solid State Circuits, , vol. 25, April 1990, pp. 584-594.vol. 25, April 1990, pp. 584-594.


Short Circuit PowerShort Circuit Power

Psc = α fck Esc


PPscsc, Rise Time and Capacitance, Rise Time and Capacitance

VVDDDD

GroundGround

CL

Ron

R = large

vi (t) vo(t) ic(t)+isc(t)

tftr vo(t)───

R↑

vo(t)

VVDDDD


iiscsc, Rise Time and Capacitance, Rise Time and Capacitance

-tVDD[1- exp(─────)]

vo(t) R↓(t) CIsc(t) = ──── = ──────────────

R↑(t) R↑(t)


iiscmaxscmax, Rise Time and Capacitance, Rise Time and Capacitance

Small C Large C

tf

1────R↑(t)

iscmax

vo(t) vo(t)

i

t


PPscsc, Rise Times, Capacitance, Rise Times, CapacitanceFor given input rise and fall times short For given input rise and fall times short

circuit power decreases as output circuit power decreases as output capacitance increases.capacitance increases.

Short circuit power increases with increase Short circuit power increases with increase of input rise and fall times.of input rise and fall times.

Short circuit power is reduced if output rise Short circuit power is reduced if output rise and fall times are smaller than the input and fall times are smaller than the input rise and fall times.rise and fall times.


Summary: Short-Circuit PowerSummary: Short-Circuit Power Short-circuit power is consumed by each Short-circuit power is consumed by each

transition (increases with input transition time).transition (increases with input transition time). Reduction requires that gate output transition Reduction requires that gate output transition

should not be faster than the input transition should not be faster than the input transition (faster gates can consume more short-circuit (faster gates can consume more short-circuit power).power).

Increasing the output load capacitance reduces Increasing the output load capacitance reduces short-circuit power.short-circuit power.

Scaling down of supply voltage with respect to Scaling down of supply voltage with respect to threshold voltages reduces short-circuit power; threshold voltages reduces short-circuit power; completely eliminated when completely eliminated when VVDD DD ≤ |≤ |VVtptp| + | + VVtntn . .






LeakageLeakage


Leakage PowerLeakage Power

IG

ID

Isub

IPT

IGIDL

n+ n+

GroundVDD

RDrainSource

Gate

Bulk Si (p)

nMOS Transistor


Leakage Current ComponentsLeakage Current Components Subthreshold conduction, Subthreshold conduction, IIsubsub

Reverse bias pn junction conduction, Reverse bias pn junction conduction, IIDD

Gate induced drain leakage, Gate induced drain leakage, IIGIDLGIDL due to due to

tunneling at the gate-drain overlaptunneling at the gate-drain overlap Drain source punchthrough, Drain source punchthrough, IIPTPT due to short due to short

channel and high drain-source voltagechannel and high drain-source voltage Gate tunneling, Gate tunneling, IIGG through thin oxide; through thin oxide; may may

become significant with scalingbecome significant with scaling


Subthreshold CurrentSubthreshold Current

Isub = μ0 Cox (W/L) Vt2 exp{(VGS –VTH ) / nVt }

μ0: carrier surface mobility

Cox: gate oxide capacitance per unit area

L: channel lengthW: gate widthVt = kT/q: thermal voltage

n: a technology parameter


IIDSDS for Short Channel Devicefor Short Channel Device

Isub= μ0 Cox(W/L)Vt2 exp{(VGS –VTH + ηVDS)/nVt}

VDS = drain to source voltage

η: a proportionality factor

W. Nebel and J. Mermet (Editors), Low Power Design in Deep Submicron Electronics, Springer, 1997, Section 4.1 by J. Figueras, pp. 81-104


Increased Subthreshold LeakageIncreased Subthreshold Leakage

0 VTH’ VTH

Log

(Dra

in c

urre

nt)

Gate voltage

Scaled device

Ic

Isub


Summary: Leakage PowerSummary: Leakage Power Leakage power as a fraction of the total power Leakage power as a fraction of the total power

increases as clock frequency drops. increases as clock frequency drops. Turning Turning supply off in unused parts can save powersupply off in unused parts can save power ..

For a gate it is a small fraction of the total power; For a gate it is a small fraction of the total power; it can be significant for very large circuits.it can be significant for very large circuits.

Scaling down features requires lowering the Scaling down features requires lowering the threshold voltage, which increases leakage threshold voltage, which increases leakage power; roughly doubles with each shrinking.power; roughly doubles with each shrinking.

Multiple-threshold devices are used to reduce Multiple-threshold devices are used to reduce leakage power.leakage power.


Technology ScalingTechnology Scaling

Scaling down 0.7 micron by factors 2 and Scaling down 0.7 micron by factors 2 and 4 leads to 0.35 and 0.17 micron 4 leads to 0.35 and 0.17 micron technologiestechnologies

Constant electric field assumedConstant electric field assumed


Constant Electric Field ScalingConstant Electric Field Scaling

B. Davari, R. H. Dennard and G. G. B. Davari, R. H. Dennard and G. G. Shahidi, “CMOS Scaling for High Shahidi, “CMOS Scaling for High Performance and Low Power—The Next Performance and Low Power—The Next Ten Years,” Ten Years,” Proc. IEEEProc. IEEE, April 1995, pp. , April 1995, pp. 595-606.595-606.

Other forms of scaling are referred to as Other forms of scaling are referred to as constant-voltage and quasi-constant-constant-voltage and quasi-constant-voltage.voltage.


Bulk nMOSFETBulk nMOSFET

n+

p-type body (bulk)

n+

L

W

SiO2

Thickness = tox

Gate

SourceDrain

Polysilicon


Technology ScalingTechnology Scaling A scaling factor (A scaling factor (S S ) reduces device dimensions as ) reduces device dimensions as

1/1/SS.. Successive generations of technology have used a Successive generations of technology have used a

scaling scaling S = √2, doubling the number of transistors , doubling the number of transistors per unit area. This produced 0.25per unit area. This produced 0.25μμ, 0.18, 0.18μμ, 0.13, 0.13μμ, , 90nm and 65nm technologies, continuing on to 90nm and 65nm technologies, continuing on to 45nm and 30nm.45nm and 30nm.

A 5% gate shrink (A 5% gate shrink (SS = 1.05) is commonly applied to = 1.05) is commonly applied to boost speed as the process matures.boost speed as the process matures.

N. H. E. Weste and D. Harris, CMOS VLSI Design, Third Edition, Boston:Pearson Addison-Wesley, 2005, Section 4.9.1.


Constant Electric Field ScalingConstant Electric Field Scaling

Device ParameterDevice Parameter ScalingScaling

Length, Length, LL 1/1/SS

Width, Width, WW 1/1/SS

Gate oxide thickness, Gate oxide thickness, ttoxox 1/1/SS

Supply voltage, Supply voltage, VVDDDD 1/1/SS

Threshold voltages, Threshold voltages, VVtntn, V, Vtptp 1/1/SS

Substrate doping, Substrate doping, NNAA SS


Constant Electric Field Scaling(Cont.)Constant Electric Field Scaling(Cont.)Device CharacteristicDevice Characteristic ScalingScaling

ββ W / W / ((L tL toxox)) SS

Current, Current, IIdsds ββ ((VVDDDD – V – Vt t ) ) 22 1/1/SS

Resistance, Resistance, RR VVDD DD / I/ Idsds 11

Gate capacitance, Gate capacitance, CC W L / tW L / toxox 1/1/SS

Gate delay, Gate delay, ττ RCRC 1/1/SS

Clock frequency, Clock frequency, ff 11/ / ττ SS

Dynamic power per gate,Dynamic power per gate, P P CV CV 2 2 ff 1/1/S S 22

Chip area,Chip area, A A 1/1/S S 22

Power densityPower density P/AP/A 11

Current densityCurrent density IIds ds /A/A SS


Problem: A Design ExampleProblem: A Design Example A battery-operated 65nm digital CMOS device is found A battery-operated 65nm digital CMOS device is found

to consume equal amounts (to consume equal amounts (P P ) of dynamic power and ) of dynamic power and leakage power. The short-circuit power is negligible. leakage power. The short-circuit power is negligible. The energy consumed by a computing task, that takes The energy consumed by a computing task, that takes TT seconds, is 2 seconds, is 2PTPT. .

Compare two power reduction strategies for extending Compare two power reduction strategies for extending the battery life:the battery life:

A. Clock frequency is reduced to half, keeping all other parameters constant.

B. Supply voltage is reduced to half. This slows the gates down and forces the clock frequency to be lowered to half of its original (full voltage) value. Assume that leakage current is held unchanged by modifying the design of transistors.


Solution: Strategy A. Clock Solution: Strategy A. Clock Frequency ReductionFrequency Reduction

Reducing the clock frequency will reduce Reducing the clock frequency will reduce dynamic power to dynamic power to P P / 2, keep the static / 2, keep the static power the same as power the same as PP, and double the , and double the execution time of the task. execution time of the task.

Energy consumption for the task will be,Energy consumption for the task will be,

Energy = (Energy = (P P / 2 + / 2 + P P ) 2) 2TT = 3 = 3PTPT

which is greater than the original 2PT.


Solution: Part B. Supply Voltage Solution: Part B. Supply Voltage ReductionReduction

When the supply voltage and clock frequency When the supply voltage and clock frequency are reduced to half their values, dynamic are reduced to half their values, dynamic power is reduced to power is reduced to P P / 8 and static power to / 8 and static power to P P / 2. The time of task is doubled and the total / 2. The time of task is doubled and the total energy consumption is,energy consumption is,

Energy = (Energy = (P P / 8 + / 8 + P P / 2) 2/ 2) 2TT = 5 = 5PT PT / 4 =1.25/ 4 =1.25PTPT The voltage reduction strategy reduces

energy consumption while a simple frequency reduction consumes more energy.


Comparing Strategies A and BComparing Strategies A and B

Original A B

Voltage V V V/2

Clock Frequency F F/2 F/2

Task Duration T 2T 2T

Power 2P 1.5P 0.625P

Energy 2PT 3PT 1.25P

Copyright Agrawal, 2007 ELEC5270/6270 Spring 09, Lecture 4 1 ELEC 5270-001/6270-001 Spring 2009...

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Transcript of Copyright Agrawal, 2007 ELEC5270/6270 Spring 09, Lecture 4 1 ELEC 5270-001/6270-001 Spring 2009...