CMOS Process Integration

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FOR 28NM NODE LOGIC CMOS Process Integration One Day This course presents a clear and technically current description of the 28nm node fabrication process for Logic as well as an introduction to 22nm FinFet processing. Jerry Healey / Threshold Systems [email protected] • 512-576-6404 course brief: Instructor: duration: Learn about the fabrication and Process Integration challenges of the 28nm node. COURSE OFFERING Threshold Systems, Inc. PO Box 1946 Austin, TX 78767 512-576-6404 © 2013 Threshold Systems. All rights reserved. www.ThresholdSystems.com

Transcript of CMOS Process Integration

Page 1: CMOS Process Integration

FOR 28NM NODE LOGICCMOS Process Integration

One Day

This course presents a clear and technically current description of the 28nm node fabrication process for Logic as well as an introduction to 22nm FinFet processing.

Jerry Healey / Threshold Systems

[email protected] • 512-576-6404

course brief:

Instructor:

duration:

Learn about the fabrication and Process Integration challenges of the 28nm node.

COURSE OFFERING

Threshold Systems, Inc.

PO Box 1946

Austin, TX 78767

512-576-6404

© 2013 Threshold Systems. All rights reserved.

www.ThresholdSystems.com

Page 2: CMOS Process Integration

FOR 28NM NODE LOGICCMOS Process Integration

1) To provide a detailed understanding of Silicon processing from an important perspective: a detailed step-by-step description of the IC manufacturing process for a 28nm planar Logic device

2) To present a detailed description of the unique structural characteristics and processing requirements for each module in a 28nm node front-end and back-end process

3) To present an introduction to the 22nm node and an examination of the Intel 22nm FinFet implementation

Designers, R&D, Product, Device, Test and Process engineers, managers and other personnel who desire a deeper understanding 28nm planar Logic and an introduction to 22nm FinFet fabrication.

Driving Forces:• The underlying technical forces driving the direction of microchip evolution

28nm Process Integration; the Front End:• Introduction to the basic modules• Shallow Trench Isolation• Ion implantation details: modern Extension, Halo and Contact implants• Double patterning and the maintenance of critical dimension control• Planar gate electrode formation - hard masks and double patterning• Gate-first integration methodology• Replacement gate (gate-last) integration methodology• High-k/metal gate integration strategies• Strained silicon using SiC and SiGe replacement Source/Drains

28nm Process Integration; the Back End:• Tungsten contact plugs, and tungsten trench contacts• The Dual Damascene process: metal masks, Ta/TaN barrier deposition,

Copper deposition and polish• New metal resistance modalities: surface and grain boundary scattering

An Introduction to 22nm FinFets:• An overview of the FinFet manufacturing process• The Intel 22nm FinFet implementation: choices, challenges and

compromises

appropriate for:

course outline:

course objectives:

Threshold Systems, Inc.

PO Box 1946

Austin, TX 78767

512-576-6404

www.ThresholdSystems.com

The course content is presented in a clear, highly visual and easy-to-understand manner. It is taught by a world-class instructor who has over 20 years of hands-on experience in the field of silicon fabrication and who is an award winning public speaker.

The course notes are technically current, reproduced in high resolution color and profusely illustrated with high-quality graphics and TEMs of real-world devices.

© 2013 Threshold Systems. All rights reserved.