Www.mosis.com 1/20 High-Quality, Low-Cost IC Fabrication with MOSIS.

19
www.mosis.c om 1/20 High-Quality, Low- Cost IC Fabrication with MOSIS

Transcript of Www.mosis.com 1/20 High-Quality, Low-Cost IC Fabrication with MOSIS.

Page 1: Www.mosis.com 1/20 High-Quality, Low-Cost IC Fabrication with MOSIS.

www.mosis.com1/20

High-Quality, Low-Cost IC Fabrication with MOSIS

Page 2: Www.mosis.com 1/20 High-Quality, Low-Cost IC Fabrication with MOSIS.

www.mosis.com2/20

What is MOSIS ?An organization dedicated to offering:

• High-quality access to the latest production-proven semiconductor technologies.

• Low-cost engineering samples of IC designs.

• Small-volume production services.• Single-point of interface for additional

services or products offered by partners.• Support for questions on design rules,

SPICE models and design kits.

Page 3: Www.mosis.com 1/20 High-Quality, Low-Cost IC Fabrication with MOSIS.

www.mosis.com3/20

What does MOSIS do?

Dedicated (DED) Runs.• 1/3 of the 100+

runs per year are Dedicated Runs.

Taxi-Runs (for IBM only).• Mid-way between

a DED and a MPW run.

Multi-Project Wafer (MPW) Runs.

Page 4: Www.mosis.com 1/20 High-Quality, Low-Cost IC Fabrication with MOSIS.

www.mosis.com4/20

How does MOSIS do MPWs?

Page 5: Www.mosis.com 1/20 High-Quality, Low-Cost IC Fabrication with MOSIS.

www.mosis.com5/20

Who Uses the MOSIS Service?

Companies with pilot-projects that require engineering samples for proof-of-concept.

Organizations with small-volume production.• Industrial firms.• Governmental agencies.• Academic institutions.

Page 6: Www.mosis.com 1/20 High-Quality, Low-Cost IC Fabrication with MOSIS.

www.mosis.com6/20

MOSIS – ChronologyPhase I : 1981-1985

• DARPA direct funded era: 100% DARPA.

Phase II : 1985-1994• Multi-agency direct funding• DARPA : ~80% + DoD, NSF : ~15% (1985).DoD, NSF : ~15% (1985).• Commercial customers: ~5% (1985). Commercial customers: ~5% (1985).

Phase III : 1994-present• Self-sustaining operations.• Commercial customers provide 100% of

income.

Page 7: Www.mosis.com 1/20 High-Quality, Low-Cost IC Fabrication with MOSIS.

www.mosis.com8/20

Why Customers Come to MOSIS?Quality and low cost + fast turn-around time.Access to leading technologies.

• Multiple processes - multiproject, dedicated runs.

Die size, quantity flexibility.• Examples: 2 x 2, 3 x 6, 7 x 6 mm;

40, 500, 2000 parts (die and/or packaged).

Design rules, spice parameters. Technology files, design kits.

• Includes standard cells, pads, others.

Page 8: Www.mosis.com 1/20 High-Quality, Low-Cost IC Fabrication with MOSIS.

www.mosis.com9/20

MOSIS Capabilities (1/2)Organizes Multiproject, Dedicated, and

Taxi runs.• Gathers designs, handles purchase orders, etc.

Supports users.• Performs design-kit distribution.• Handles questions.

−Design rules, modeling, etc.

• Mpw runs include functional reference designs.• Works closely with design service providers.

Page 9: Www.mosis.com 1/20 High-Quality, Low-Cost IC Fabrication with MOSIS.

www.mosis.com10/20

MOSIS Capabilities (2/2)

Orders masks, wafers.• Fully-checked, -merged reticle compatible

with production fabrication process.

Performs packaging/test.• Plastic, ceramic, flip-chip, etc.• Functional testing available.

Allows for die size, quantity flexibility.• Die cut into desired size, provides larger

quantities (e.g. 500, 2000) within runs (for MPW, Dedicated and Taxi).

Page 10: Www.mosis.com 1/20 High-Quality, Low-Cost IC Fabrication with MOSIS.

www.mosis.com11/20

AMIS ProcessesFeature

SizeMetal Layers

Voltage (V)

Description

0.35 m 4 3.3 NPN, PNP capacitor (I3T80)

0.50 m 3 5.0 2-poly, resistor (C5F/N)

0.70 m 3 100 1-poly, resistor (I2T100)

1.50 m 2 5.0 2-poly, NPN (ABN)

Page 11: Www.mosis.com 1/20 High-Quality, Low-Cost IC Fabrication with MOSIS.

www.mosis.com12/20

AMS Processes

Feature Size

Metal Layer

s

Voltage (V)

Description

0.35 m 4 3.3/5.0

CMOS (C35B4C3)

CMOS-Opto (C35B401)

CMOS (C35B4M3)

HV CMOS (H35B4D3)

4 2.5 SiGe (S35D4)

4 50 HV CMOS HiRes (H35B4D3)

0.80 m 2 50 HV CMOS (CXZ)

Page 12: Www.mosis.com 1/20 High-Quality, Low-Cost IC Fabrication with MOSIS.

www.mosis.com13/20

IBM CMOS Processes

Feature Size

Metal Layers

Voltage (V)

Description

90 nm 7, 8 1.0

9SF (logic)

9LP (LP logic)

9RF (mixed-mode)

0.13 m 8 1.2/2.5 8RF-LM (logic)

8RF-DM (mixed-mode)

0.18 m 6 1.8/3.3 7SF (logic)

7RF (mixed-mode)

0.25 m 5 2.5/3.3 6RF (mixed-mode)

Page 13: Www.mosis.com 1/20 High-Quality, Low-Cost IC Fabrication with MOSIS.

www.mosis.com14/20

IBM SiGe ProcessesFeature

SizeMetal Layers

Voltage (V)

Description

0.13 m 7 1.2/2.5 8HP

0.18 m 7 1.8/3.3 7WL

5 1.8,2.5/3.3 7HP

0.25 m 6, 7 2.5 6HP, 6DM

0.35 m 4 3.3/5.0 5HPE

0.50 m 3, 4, 5 3.3

5DM

5AM

5PA

Page 14: Www.mosis.com 1/20 High-Quality, Low-Cost IC Fabrication with MOSIS.

www.mosis.com15/20

TSMC ProcessesFeature

SizeMetal Layers

Voltage (V)

Description

0.13 m 8 1.2/2.5 CL013G (Logic)

CR013G (Mixed-Mode)

0.18 m 6 1.8/3.3 CL018 (Logic)

CM018 (Mixed-Mode)

0.25 m 5 2.5/3.3 CL025 (Logic)

CM035 (Mixed-Mode)

0.35 m 4 3.3/5.0 CL035 (Logic)

CM035 (Mixed-Mode)

Page 15: Www.mosis.com 1/20 High-Quality, Low-Cost IC Fabrication with MOSIS.

www.mosis.com16/20

MOSIS Education ProgramMEP-Instructional

• Enrollment forms to MOSIS at the beginning of each semester or quarter.

• Processes available:• AMIS ABN, and• AMIS C5F/N.

MEP-Research• Requires a proposal by the

PI + Dean’s letter.• Processes available:

• AMIS ABN and AMIS C5F/N.

• IBM BiCMOS SiGe (7WL) and CMOS (8RF-LM/8RF-DM, 7RF) processes

• TSMC 0.35 and 0.25 m CMOS processes.

Reporting requirements (INS vs RES)

Academic NDA every year.

Page 16: Www.mosis.com 1/20 High-Quality, Low-Cost IC Fabrication with MOSIS.

www.mosis.com17/20

MOSIS Web Site

Page 17: Www.mosis.com 1/20 High-Quality, Low-Cost IC Fabrication with MOSIS.

www.mosis.com18/20

MOSIS Web Forms

For Project Submission,

Tracking, etc.

Secure or Non-secure

Page 18: Www.mosis.com 1/20 High-Quality, Low-Cost IC Fabrication with MOSIS.

www.mosis.com19/20

SummaryHigh-quality, low-cost, fast prototyping.Regularly scheduled prototype runs +

dedicated runs based on customer’s schedule needs.

Low volume production.Access to latest production technologies.Access to important 3rd-party resources for

design tools and packaging.Reference designs on MPW runs.Acting as the interface, MOSIS greatly

increases chances for first-pass success.

Page 19: Www.mosis.com 1/20 High-Quality, Low-Cost IC Fabrication with MOSIS.

www.mosis.com20/20

Contact Information César Pina — Director.

[email protected], tel. +1 310 448-9400 Wes Hansford — Deputy-Director.

[email protected], tel. +1 310 448-9199 Customer Support Line.

[email protected], tel. +1 310 448-9400 Hudson J. Mota de Alcântara — Customer Support

[email protected], tel +1 310 448-8351. MOSIS Fax: (310) 823-5624