Structure and Operation of the MOSFET24 and 26 March 2014

FET Circa 1964-Commercial Introduction First FET IC Circa 1964 By RCA

MOS Inversion Layer

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- - - - - - - - - - - - +

-

Metal layer

Oxide layer

P-type

+ + + + + + + + + + + + +

n-type inversion layer

With large positive gate bias, there will be electrons at the interface between the oxide and semiconductor, which leads to formation of a thin n-type inversion layer

Threshold voltage VT: applied gate voltage required to achieve the threshold inversion

Voltage-Current Relationship of NMOS (1)

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Voltage-Current Relationship of NMOS (1)

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