SPARKS TEAM

EDITOR Dr.K.Kalaiselvi, Ph.D.,HOD STAFF EDITOR

Ms.P.Divya, M.E.,AP STUDENT EDITORS MONISHAA.SS IV-A

PRIYANKHA.B IV-B STUDENT MEMBERS MANIMALA III-A AKSHAY III-A

SANGEETHA III-B

SENTHIL III-B

AISHWARIYA II-A

AUDITHYA II-A

SHIVANI II-B RENGARAJ II-B

CREATIVE CUSTOMIZER M.SELVA DURAI IV-B

CONTENTS: MESSAGE

FROM HOD

DESK

STAFF

ACHIEVEMENT

STUDENT

ACHIEVEMENT

RENAISSANCE

2K15”

IET QUIZ

REPORT

STUDENT

PRODIGIES

PLACEMENT

DETAILS

LATEST

INNOVATION

MESSAGE FROM HOD DESK

First of all I would like to congratulate the final year students who got placed in the

campus interviews. And for the non-placed students, I would say: wait patiently and work

hard. The best always come at the last. Keep up the hope and strive for the heights. The

second continuous assessment test are fast approaching hence I would like to urge my

students to prepare and perform well.I hope that my students produce many laurels in

academics as well as in placement.

ACHIEVEMENTS

Happiness does not come from doing easy work but from the afterglow of satisfaction that

comes after the achievement of a difficult task that demanded our best. The staff of EEE

Department have taught the students that without continual growth and progress, success has

no meaning.

STAFF ACHIEVEMENTS:

Dr.K.Mala was part of a workshop conducted by Anna university on Solar Energy on 31st

august 2015.

STUDENT ACHIEVEMENTS:

PRESENT AROUND THE WORLD (PATW) HELD BY IET:

DESCRIPTION:

It was a presentation competition for engineers. Participants could

choose any technical topic of their choice and make a presentation on it.

PARTICIPANTS:

R.Aishwarya (II-A)

Y.V.Aishwarya (II-A)

Ashika Unnikrishnan (II-A)

Aarthi S.K (II-A)

RESULTS:

Ashika Unnikrishnan was selected and stood sixth in the

Zonalround.

SYMPOSIUM CONDUCTED BY THE EEE DEPARTMENT OF SSN

COLLEGE OF ENGINEERING:

II place in Robotics Competition

AshikaUnnikrishnan (II-A)

R.Janani (II-A)

E.Abinaya (II-A)

SYMPOSIUM CONDUCTED BY EEE DEPARTMENT OF SRI

VENKATESHWARA COLLEGE OF ENGINEERING:

Winners of Dr.Kalaam Salaam based on Dr.Kalaam's life

VishaalPrabhakar (II-B)

ThanveerShimmaq (II-B)

PranavKumaran (II-B)

Winners of Junk Artevent

Varun (III-B)

Varadharajan (III-B)

Sathyanarayanan (III-B)

SYMPOSIUM CONDUCTED BY MECHANICAL DEPARTMENT OF SRI

VENKATESHWARA COLLEGE OF ENGINEERING:

Winner of Photography Competition

Yashwanth KS (III-B)

“RENAISSANCE 2K15” -A NEW BEGINNING-

The Rotaract Club of Easwari Engineering College, took a new step into the rotary year

2015-2016. “Renaissance 2k15”, the 17th official installation ceremony on the latest set of

office bearers for the next rotary year took place on the 10th of August 2015 in the presence

of the Chief Guest, Rtn. S.M. Balaji, Rotaract Chairman, at the TRP Auditorium of Easwari

Engineering College. The event was also bolstered by the Guests of Honour, Rtn. Devaraj,

President of Rotary club, andRtn. Gyanavelan, Assistant Governer, Administration City

Clubs. To make the event more auspicious, it was witnessed by the special guest Rtr.

VinothNagarajan, DRR, District 3230 and the faculty coordinator, Mr.T.Gurumurthi, Asst.

Professor of Easwari Engineering College. The event was attended by more than 300 active

Green Rotaractors of SRM Easwari Engineering College,in which there are avid participants

from the EEE department. After the arrival of the guests, the event began with the formal

declaration of the immediate past president. Then it was time to bring the new crew to the

spotlight. There are office bearers from the EEE department who are ardent towards the club:

ARUN

SHANKAR Community Service Chairman (III-A)

VISHAAL PRABAKAR Creative Director (II-B)

C.SHRUTHI Creative Director (II-B)

VARSHA SWAMINATHANMembership Development Officer (II-B)

PRANAV.V.SHARMA MembershipDevelopment Officer (II-B)

N.NAGANATHANPublic Relations Officer (II-A)

S.K.AARTHI Sports Director (II-A)

The set of office bearers for the 2015-2016 were formally installed by the dignitaries.The

“Renaissance 2k15” was remarked as “one of the most professional installation ceremonies”

IET QUIZ REPORT

The IET Quiz was held on 17th August 2015. The event was held between 10.30 am and 1

pm. It was conducted by the office bearers of IET at Hi-tech Hall II of Easwari Engineering

College. The event was co-ordinated and headed by Mrs.Bhuvaneshwari, HOD, EIE

Department.The event participants were selected based on an aptitude quiz conducted for

various departments.

The avid office bearers of our department who were part of organising the quiz were:

U.ASHIKA Vice President (II-A)

R.JANANI Secretary (II-A)

R.AISHWARYA Joint Secretary (II-A)

S.MENAKA Executive Member (II-A)

The quiz consisted of III rounds.

The first round comprised of ten teams of which four were eliminated. The Finals had three

teams. The first prize was won by the ECE department, the second by the CSE department

and the third prize was bagged by the EEE department. The prizes were given out to the

winners by the Head of Department, EIE.

The winners from the EEE department were:

MAHESH KANNA (II-A)

R.AUDHITYA (II-A)

G.RAMAKRISHAN (II-B)

M.RAHUL (II-B)

STUDENT PRODIGIES

Pencil Sketch by Varun.S of III "B"

Award winning photography by Yashwanth K.S of III "B"

PLACEMENT DETAILS

TCS

UG

1. ABHILASH UNNIKRISHNAN

2. AISHWARIYA. A

3. AISHWARYA .B.V

4. AISHWARYA .G.V.P

5. AJITH KUMAR .V

6. AKSHAYA .S

7. AKSHAY JAYAKUMAR

8. AKSHAY VENKATA SUBRAMANIAN. R

9. ANIRUDHAN K.S

10. ARAVIND.S

11. ARAVINDHAN. J

12. ARCHANA .G

13. ATHIYA R.V

14. BALA CHANDRAN. S

15. BHAVANI .P

16. DEEPAK .M

17. DEVARAJAN. D

18. DINESH. M

19. GOKUL PANDIAN .C

20. GOVINDAN .V

21. HARIHARASUDAN .R

22. HENNA SHAHANI

23. JEYAKEERTHANA .J

24. KAPIL .M

25. KARTHICK .T.N

26. KARTHICK SUNDAR .S

27. KARTHIK .R

28. KEERTHANA. I

29. LAKSHMI KRISHNASWAMY

30. MONISHAA .S.S

31. NANDHAKUMAR. G

32. OSCAR J.H

33. PAVITHRA .G.R

34. POOJA.M

35. PRANAV KUMAR.L

36. PRIYANKHA.B

37. RAJKUMAR.P

38. RAMKUMAR.R

39. RENUKA.N

40. REVATHY.R

41. RIYAZUL HUQ. K.Z

42. SAHANA.S

43. SANDIYA.E

44. SANJAY KUMAR.G

45. SATHISH SANKARANARAYANAN .M

46. SELVA DURAI .M

47. SHANMUGA RAJA.D

48. SHEIK DAWOOD.S

49. SIVAPRAKASH.P

50. SIVA RANJANI.G

51. SOWMYA DEEPTHI.D

52. SREE RAM.V

53. SREYAS.S

54. SURESH KUMAR.S

55. ULAGANATHAN.M

56. VASANTH.P

57. VIJAYAKUMAR.R

58. VINODHINI.G

59. VINODHINI.M

60. VISHNUVARDHAN.K

61. P.TAMIZHARASAN

62. B.KRIBAKARAN

PG

1. BVS.ANNAPURNA

2. RENGA MEENA.R.M

EMBEDUR

1. ANIRUDHAN K.S

INNOVATIONS IN THE FIELD OF ELECTRICAL ENGINEERING

The Institute for Solar Energy Research Hamelin (ISFH) and the Institute for

Electronic Materials and Devices (MBE) of the Leibniz University Hannover have

successfully completed the joint-development project “CHIP” on industrial ion implanted n-

type PERT (Passivated Emitter and Rear, rear Totally doped) solar cells. In CHIP, the driving

mechanisms for the annealing of implant damage have been investigated scientifically with

special attention on non-amorphizing boron and amorphizingBFx implants.

The Institute for Solar Energy Research Hamelin (ISFH) and the Institute for

Electronic Materials and Devices (MBE) of the Leibniz University Hannover have

successfully completed the joint-development project “CHIP” on industrial ion implanted n-

type PERT (Passivated Emitter and Rear, rear Totally doped) solar cells.

Photograph of a 156 mm × 156 mm large, ion implanted, co-annealed and fully screen-

printed bifacial n-type PERT solar cell with an efficiency of 21 %.

The CHIP (Cost-efficient High-throughput Ion implantation for Photovoltaics) project

was funded by the German Federal Ministry for Economic Affairs and Energy. In CHIP, the

driving mechanisms for the annealing of implant damage have been investigated

scientifically with special attention on non-amorphizing boron and amorphizingBFx

implants.

The latter are highly relevant for the transfer of ion implantation into photovoltaics

since PV implanters generally do not feature mass separators and therefore mainly implant

BF2 rather than elementary boron.

The obtained insights into the annealing processes have been applied for processing

of industrial n-type PERT cells within a very lean process flow: After double-side texturing

of 156mm×156mm large n-type Cz wafers, the front-side was boron or BF2 implanted, and

the rear-side was implanted with phosphorous.

Implant damage was annealed in a single high-temperature step (co-annealing), while

the utilization of BF2 enabled a significant reduction of required temperature. After

annealing, the front-side was passivated by an Al2O3/SiNx stack, and the rear side was

passivated by SiNx. Subsequently, screen-print at the front and the rear and co-firing was

performed. Silver consumption was minimized utilizing fine-line print.

The highest, independently confirmed efficiency of a cell with a boron implanted

emitter, measured on a brass chuck, was 21.0% where Voc was 664.6 mV, Jsc was 39.8

mA/cm2, and FF was 79.3%. In-house measurements from front and rear side yielded a

bifaciality factor of 97.3%.

According to Dr. Robby Peibst, head of the project, the results show that ion

implantation is an enabling and economical doping technology, and screen-print on n-type

cells undergoes an evolutionary improvement comparable to that on p-type cells. The lean

process flow, the high efficiency without LID and the high bi facility makes n-type PERT a

viable cell concept.