Silicon Semiconductor Solutions for Wireless Technology · Silicon Semiconductor Solutions for...

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IBM, Systems and Technology Group, Microelectronics Division, 200mm Specialty Foundry David Harame, IBM Fellow, IEEE Fellow Silicon Semiconductor Solutions for Silicon Semiconductor Solutions for Wireless Technology Wireless Technology © 2011 IBM Corporation D. Harame, November 7, 2012, ISA CXO Conclave, Bangalore, India IBM, Essex Junction, Vermont

Transcript of Silicon Semiconductor Solutions for Wireless Technology · Silicon Semiconductor Solutions for...

IBM, Systems and Technology Group, Microelectronics Division, 200mm Specialty Foundry

David Harame, IBM Fellow, IEEE Fellow

Silicon Semiconductor Solutions for Silicon Semiconductor Solutions for Wireless TechnologyWireless Technology

© 2011 IBM CorporationD. Harame, November 7, 2012, ISA CXO Conclave, Bangalore, India

IBM, Essex Junction, Vermont

David Harame, IBM Fellow, IEEE Fellow

IBM, Systems and Technology Group, Microelectronics Division, 200mm Specialty Foundry

Future Trends in Wireless Devices

75,000

100,000

125,000Source: iSuppli Wireless Systems Q1 2011 Market Tracker

� Semiconductor Industry being fueled by the internet connectivity of things

© 2011 IBM CorporationD. Harame, November 7, 2012, ISA CXO Conclave, Bangalore, India2

0

25,000

50,000

2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015

Cordless Phones 1G/2+G 3G

4G Gray Market Handsets Media Tablets

Mobile Wireless Broadband Access Fixed Wireless Broadband Access Wireless LAN Client Access

Wireless LAN Access Point/Router Mobile Comm Infrastructure Battery Chargers for Mobile Comm.

Other Wireless Communications

IBM, Systems and Technology Group, Microelectronics Division, 200mm Specialty Foundry

2G2G 3G3G

Cellular Transmission StandardsGSM = Global Systems for Mobile CommunicationsEDGE = Enhanced Data rates for GSM Evolution

Multiple Bands needed to accommodate mobility vs. data rate

UMTS = Universal Mobile Telecommunication SystemCDMA = Code Division Multiple AccessHSPA = High Speed Packet Access

LTE = Long Term Evolution

© 2011 IBM CorporationD. Harame, November 7, 2012, ISA CXO Conclave, Bangalore, India3

802.11ac

2G2G 3G3G

4G4G

LTE = Long Term Evolution

IBM, Systems and Technology Group, Microelectronics Division, 200mm Specialty Foundry

Explosive Growth in Mobile Data TrafficNetworks struggling to keep up

Informa Telecoms & Media“in North America 86% of mobile data traffic is currently generated by smartphone users, notably those using an iPhone or high-end Android devices," notes Malik Kamal-Saadi, principal analyst at Informa Telecoms & Media.

Average traffic per (smartphone) user (ATPU) -will increase by a staggering 700% over the next five years.

Worldwide Phenomenon: Developed Developing

Smart Phone

© 2011 IBM CorporationD. Harame, November 7, 2012, ISA CXO Conclave, Bangalore, India4

Worldwide Monthly Mobile Data Traffic

Worldwide Phenomenon: Mobile Broadband Traffic Doubles Every Year

Developed CountriesData services (e.g. iPhone) 3G WiMAX, LTE deployments X10 increase capacity per base station + more stations

Developing CountriesGrowth of mobile users worldwideAdditional billion users added in 2 years

� Driven by consumer demand for data vs. voice (social networking, internet, media)

� Multiple radios

� Multiple Power Amplifiers (PA)

� Multiple antennas

� Complex Power Management

� Sensors

IBM, Systems and Technology Group, Microelectronics Division, 200mm Specialty Foundry

Specialty Foundry Focus Segments

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© 2011 IBM CorporationD. Harame, November 7, 2012, ISA CXO Conclave, Bangalore, India5

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IBM, Systems and Technology Group, Microelectronics Division, 200mm Specialty Foundry

Microelectronics revenue by market segment

OEM Semiconductor Revenue History

70%

80%

90%

100%

Per

cent

of R

even

ue

A&D

© 2011 IBM CorporationD. Harame, November 7, 2012, ISA CXO Conclave, Bangalore, India66

0%

10%

20%

30%

40%

50%

60%

70%

2003 2004 2005 2006 2007

Per

cent

of R

even

ue

A&DConsumerCommunicationsITBase

IBM, Systems and Technology Group, Microelectronics Division, 200mm Specialty Foundry

Analog & Mixed Signal– Differentiate with New Devices, Structures and Design Kits not LithographyProcessors�Scale with lithography �CMOS device innovation for

performance

Analog & Mixed Signal Circuits � Do not always shrink with

lithography� Integration of discrete functions

into Silicon � New structures for higher voltage,

© 2011 IBM CorporationD. Harame, November 7, 2012, ISA CXO Conclave, Bangalore, India7

�Lower voltage and new materials for lower power

�Circuit simulation models for extreme numbers of transistors and high levels of integration

� New structures for higher voltage, power management

� Circuit simulation models focused on precision for RF accuracy

� Client Collaboration

IBM, Systems and Technology Group, Microelectronics Division, 200mm Specialty Foundry

IBM Specialty Foundry Segment Alignment

RF CMOS

SiGeBiCMOS

5HPE5HP/AM/5HP/AM/DM/PA

8RF 9RF

IPD

High Performance RF/AMS

6WL

6HP/DM

6RF 7RF

7HP

7WL 8WL

8HP/8XP* 9HP*

7TG

1KW5PAe 1KW5PAe 5PAe

5PA

© 2011 IBM CorporationD. Harame, November 7, 2012, ISA CXO Conclave, Bangalore, India8

90 nm90 nm130 nm130 nm250 nm250 nm 180 nm180 nm350 nm350 nm

RF CMOS

RF SOI

CMOS

HV CMOS

6SF 7SF

8RF

8SFG

9RF

9SF 9LP

Technologynode

Tech

nolo

gy

*In developmentQualified

PA/FEMs & Transceivers HV & Power Management

7HV

7RF SOI

6RF 7RF 7TG

CMOS Foundation

500+ nm500+ nm

IBM, Systems and Technology Group, Microelectronics Division, 200mm Specialty Foundry

IBM’s 200mm Fabrication Strategy� Special Technologies including RFCMOS, SiGe BiCMOS, Sensors,

High Voltage CMOS, and ASICs� Development and Manufacturing in the same facility� Based on n-1 Lithography nodes for commodity

© 2011 IBM CorporationD. Harame, November 7, 2012, ISA CXO Conclave, Bangalore, India9

Semiconductor Manufacturing Facility

Essex Junction, Vermont, USA

IBM, Systems and Technology Group, Microelectronics Division, 200mm Specialty Foundry

IBM technologies for smartphone applications

Power control

Cellular transceivers /

Switch

PA

PA

PA

PA

Antenna tuner

Single-pole/multi-throw switchRF SOI

Cellular front-end moduleintegration opportunitiesRF SOI

Antenna tunersRF SOI, RF MEMS

Cellular power ampsRF SOI, SiGe, RF CMOS

Cellular transceivers

Power controlRF CMOS

IBM technologies

� Today the cellular market is driving technology directions and growth

© 2011 IBM CorporationD. Harame, November 7, 2012, ISA CXO Conclave, Bangalore, India10

Applications processors

Digital baseband processors

Memory

Cellular transceivers /Analog baseband

TV tuner

Wireless SoC transceiver

(GPS, BT, Wi-Fi)

Wi-Fi switch /

LNA

PA

Pow

erm

anagement Memory

Application processors Technology Development Alliance/ Common Platform technology

Wi-Fi RF switch, LNARF SOI

Wi-Fi power ampsSiGe

Wi-Fi front-end moduleintegration opportunitiesSiGe, RF SOI

Processor integration opportunities

TV tuner SiGe, RF CMOS

Power managementHV CMOS

Wireless SoC transceiver (GPS, Bluetooth, Wi-Fi)

RF CMOS, CMOS

Cellular transceiversRF CMOS, SiGe

IBM, Systems and Technology Group, Microelectronics Division, 200mm Specialty Foundry

What is the Front End Module?• Primary Transmit/Receive

interface to the radio antenna of any mobile or fixed telemetry device

• Consists of four primary components

– PA core: GaAs, CMOS, SiGe

– DC-DC converter: CMOS

– RF Switch: SOI, GaAs, SOS

Typical Handset Radio Board

PA Core

DC Controller

RF Switch

© 2011 IBM CorporationD. Harame, November 7, 2012, ISA CXO Conclave, Bangalore, India111111

SOS

– Filters, Duplexers & Passives

IBM Offering• 7RFSOI, SiGe 5PAE• Utilizes 180nm and 350nm Lithography

PA/FEM Modules

Filters/DuplexersPassives

IBM, Systems and Technology Group, Microelectronics Division, 200mm Specialty Foundry

RF Front End Module Schematic Representation

Receiver

Data

Low NoiseReceive Amp

narrow

5 GHz BPF

Rx A - LAN

Rx B - LAN

Tx A - LAN

Bas

eban

d IC

� Primary TX/RX interface to the antenna of any mobile or fixed telemetry device

� Includes� Transmit power amp� Receive low noise amplifier� RF switches� PA Controller� Filters

© 2011 IBM CorporationD. Harame, November 7, 2012, ISA CXO Conclave, Bangalore, India12

Data Modulator

Power Amp

narrow band filter

Simple FEM:walkie talkiecordless head setone band WiFi

Intermediate Complexity FEM:2G cell phoneDual band WiFi

2.4 GHz BPFTx B - LAN

Bluetooth

Bas

eban

d IC

Complex FEM:4G smartphone

IBM, Systems and Technology Group, Microelectronics Division, 200mm Specialty Foundry

ANT

How did IBM address the RF-Switch

� Approach: Adapt or merge existing technologies to solve the problem

� Kery Parametrics:�Low on resistance so no signal loss�Low off capacitance so no RF signal “leaks” around it when it is off

� Solution: Take the best characteristics of SOI for processors and RF Bulk Technology for handling the RF

© 2011 IBM CorporationD. Harame, November 7, 2012, ISA CXO Conclave, Bangalore, India13

RX

TX Pf0Ron

Coff

and RF Bulk Technology for handling the RF

IBM, Systems and Technology Group, Microelectronics Division, 200mm Specialty Foundry

mmWave for Gbps Communication Links

E-band E-band60GHz

71-76 and 81-86 GHz E-band is attractive for high data rate communication backhaul and “Last mile” internet connectivity

© 2011 IBM CorporationD. Harame, November 7, 2012, ISA CXO Conclave, Bangalore, India14

56 66 71 76 81 86Freq [GHz]

mmWave range is defined at 30-300GHz (L= 10 mm to 1mm)• 60GHz and E-Band (70 & 80GHz) spectrum availability enables high capacity wide bandwidth applications • 10GHz (2 x 5GHz) of spectrum available in E-Band with light licensing requirements in many regions• Data speeds from 1GBit/s to 10GBits/s for short hop links (1-2km)

Commercial E-Band Small Cell Solution

56MHz 5GHz

Channel bandwidth comparison:Microwave vs mmWave

38 71 76

IBM, Systems and Technology Group, Microelectronics Division, 200mm Specialty Foundry

050

100150200250300350400

0.01 0.10 1.00 10.00 100.00

freq

(G

Hz)

fTfmax

\

SiGe BiCMOS adapted to RequirementsSiGe NPN

Transistor

© 2011 IBM CorporationD. Harame, November 7, 2012, ISA CXO Conclave, Bangalore, India15

Ic (mA)

Silicon

CA Oxide / NitrideSilicide

Metal

Back side Metal

Si substrate

T

S

V���

���

��

��

LowerInductance

ImproveGain

IBM, Systems and Technology Group, Microelectronics Division, 200mm Specialty Foundry

Integrated Circuit Design System

Frequency Domain ADS, Golden Gate, Eldo Harmonic BalanceSpectre RF Compatible

Schematic CaptureVirtuoso-XL Schematic

LayoutParameterized Cells (PCells)Virtuoso-XL LayoutEditor

Res

imul

atio

n

Mixed-SignalVerilog-A/MS templateCadence AMS Designer

Simulation Environment

Cadence Analog Artist

Device-level TransientSpectre, HSpice, PowerSpice

MOSFETs (RF & Digital)BJTsResistorsCapacitorsVaractorsDiodesInductorsESD DevicesTransnission LinesParasitics

Design Environment Simulators Device Models

© 2011 IBM CorporationD. Harame, November 7, 2012, ISA CXO Conclave, Bangalore, India16

Spectre RF CompatibleVirtuoso-XL LayoutEditor

Parasitic ExtractionLVS Extraction with

Cadence Assura RCXSequence Columbus RFSynopsys Star RCX

Design VerificationLVS/DRCHierarchical Checking Calibre, Hercules, Assura

Res

imul

atio

n

GDS II

Parasitics

FastHSIM, UltraSIM

Skew File

IBM, Systems and Technology Group, Microelectronics Division, 200mm Specialty Foundry

IBM Specialty Foundry Enable Multiple End Markets

DigitalCameras

Game platforms

GPS

Set-top Box

Optical Transceivers

Laptops /Tablets

Satellite

© 2011 IBM CorporationD. Harame, November 7, 2012, ISA CXO Conclave, Bangalore, India17

DTV/HDTV

Cell phones

Digital Video Cameras

WLANAccess Point/Femtocells

PMPs

AutomotiveBase stations /Networking

MIDsSmartphones

Smart Meters

IBM, Systems and Technology Group, Microelectronics Division, 200mm Specialty Foundry

Q & A

© 2011 IBM CorporationD. Harame, November 7, 2012, ISA CXO Conclave, Bangalore, India18