Semiconductor detectors - Universität zu Köln · Semiconductor detectors Band gap between valence...

31
Semiconductor detectors Band gap between valence and conduction band: Ge: 0.7 eV Si: 1.1 eV GaAs: 1.4 eV Diamond: 5.5 eV Ionisation energy to create electron-hole pairs is proportional to band gap, but 2-3 higher. Energy, momentum conservation => phonon excitation (chapter Fano factor)

Transcript of Semiconductor detectors - Universität zu Köln · Semiconductor detectors Band gap between valence...

Page 1: Semiconductor detectors - Universität zu Köln · Semiconductor detectors Band gap between valence and conduction band: Ge: 0.7 eV Si: 1.1 eV GaAs: 1.4 eV Diamond: 5.5 eV Ionisation

Semiconductor detectors

Band gap between

valence and conduction

band:

Ge: 0.7 eV

Si: 1.1 eV

GaAs: 1.4 eV

Diamond: 5.5 eV

Ionisation energy to

create electron-hole pairs

is proportional to band

gap, but 2-3 higher.

Energy, momentum

conservation

=> phonon excitation

(chapter Fano factor)

Page 2: Semiconductor detectors - Universität zu Köln · Semiconductor detectors Band gap between valence and conduction band: Ge: 0.7 eV Si: 1.1 eV GaAs: 1.4 eV Diamond: 5.5 eV Ionisation

Ge-detectors

production of

high purity germanium

eN

VW b2

Thickness of depletion zone

charge carrier concentration

Ge: N~10-12 per atom

Page 3: Semiconductor detectors - Universität zu Köln · Semiconductor detectors Band gap between valence and conduction band: Ge: 0.7 eV Si: 1.1 eV GaAs: 1.4 eV Diamond: 5.5 eV Ionisation

Detector geometries

High voltage

and type of

material

determines

drift direction of

electrons and

holes

Ge-detectors

Page 4: Semiconductor detectors - Universität zu Köln · Semiconductor detectors Band gap between valence and conduction band: Ge: 0.7 eV Si: 1.1 eV GaAs: 1.4 eV Diamond: 5.5 eV Ionisation

Electric field and potential

in HPGe detector

coaxial

Ge-detectors

Electric field

Electric field

potential

potential

hexagonal

Page 5: Semiconductor detectors - Universität zu Köln · Semiconductor detectors Band gap between valence and conduction band: Ge: 0.7 eV Si: 1.1 eV GaAs: 1.4 eV Diamond: 5.5 eV Ionisation

different drift velocities of electrons and holes

two position dependent components determine signal

basic for pulse shape analysis

Elektronen

Ge-detectors

Page 6: Semiconductor detectors - Universität zu Köln · Semiconductor detectors Band gap between valence and conduction band: Ge: 0.7 eV Si: 1.1 eV GaAs: 1.4 eV Diamond: 5.5 eV Ionisation

Standard HPGe-detector

Ge-detectors

Page 7: Semiconductor detectors - Universität zu Köln · Semiconductor detectors Band gap between valence and conduction band: Ge: 0.7 eV Si: 1.1 eV GaAs: 1.4 eV Diamond: 5.5 eV Ionisation

Gammasphere

110 HPGe detectors

and anti-Compton shield

improved P/T~0.6

Ge-detectors

Page 8: Semiconductor detectors - Universität zu Köln · Semiconductor detectors Band gap between valence and conduction band: Ge: 0.7 eV Si: 1.1 eV GaAs: 1.4 eV Diamond: 5.5 eV Ionisation

High purity Ge-crystals provide excellent properties for g-spectroscopy: • Energy range: 20 keV – 5 MeV• high energy resolution: DE/E ~ 0.16 % or 2 keV @ 1.33 MeV

• Efficiency is limited by size of single Ge crystal

Development: University of KölnKFA-Jülich, EURISYS

Composite CLUSTER detector - seven large hexagonal tapered Ge detectors- encapsulated Ge crystals- closely packed in a common cryostat - common BGO escape-suppression shield - increased total-absorbtion efficiency- at 5 MeV the efficiency is doubled- highest peak to total ratio 61 percent

Composite Ge-detectors

Page 9: Semiconductor detectors - Universität zu Köln · Semiconductor detectors Band gap between valence and conduction band: Ge: 0.7 eV Si: 1.1 eV GaAs: 1.4 eV Diamond: 5.5 eV Ionisation

EUROBALL-spectrometer

239 single Ge crystals

Page 10: Semiconductor detectors - Universität zu Köln · Semiconductor detectors Band gap between valence and conduction band: Ge: 0.7 eV Si: 1.1 eV GaAs: 1.4 eV Diamond: 5.5 eV Ionisation

EUROBALL seen from a g-ray

Page 11: Semiconductor detectors - Universität zu Köln · Semiconductor detectors Band gap between valence and conduction band: Ge: 0.7 eV Si: 1.1 eV GaAs: 1.4 eV Diamond: 5.5 eV Ionisation

MINIBALL

6 Fold

MINIBALL

12 Fold

AGATA

Prototype

36 Fold

Segmented Ge-detectors

Page 12: Semiconductor detectors - Universität zu Köln · Semiconductor detectors Band gap between valence and conduction band: Ge: 0.7 eV Si: 1.1 eV GaAs: 1.4 eV Diamond: 5.5 eV Ionisation

O Composite segmented Ge-detectors

Page 13: Semiconductor detectors - Universität zu Köln · Semiconductor detectors Band gap between valence and conduction band: Ge: 0.7 eV Si: 1.1 eV GaAs: 1.4 eV Diamond: 5.5 eV Ionisation

REX-ISOLDE @ CERN

Page 14: Semiconductor detectors - Universität zu Köln · Semiconductor detectors Band gap between valence and conduction band: Ge: 0.7 eV Si: 1.1 eV GaAs: 1.4 eV Diamond: 5.5 eV Ionisation

ph ~ 10%

Ndet ~ 100

Combination:

• Segmented crystals

• Digital Electronics

• Pulse-shape analysis

• Tracking of g-rays

Compton suppression

Germanium Shell

Ge Tracking Array

ph ~ 50%

Ndet ~ 1000

ph ~ 50%

Ndet ~ 100

q ~ 8º

q ~ 3º

q ~ 1º

Larger opening angle -

=> lower energy

resolution at large

velocities, broadening

Idea of g-ray Tracking

Too many detectors at

large distance (to

reduce multiple hits)

Page 15: Semiconductor detectors - Universität zu Köln · Semiconductor detectors Band gap between valence and conduction band: Ge: 0.7 eV Si: 1.1 eV GaAs: 1.4 eV Diamond: 5.5 eV Ionisation

New g-ray detection method

• 6660 high-resolution digital electronics channels

• Coupling to ancillary detectors for added selectivity

180 hexagonal crystals 3 shapes

60 triple-clusters all equal

Inner radius (Ge) 23.5 cm

Amount of germanium 362 kg

Solid angle coverage 82 %

36-fold segmentation 6480 segments

Singles rate ~50 kHz

Efficiency: 43% (Mg=1) 28% (Mg=30)

Peak/Total: 58% (Mg=1) 49% (Mg=30)

Advanced GAmma Tracking Array

Page 16: Semiconductor detectors - Universität zu Köln · Semiconductor detectors Band gap between valence and conduction band: Ge: 0.7 eV Si: 1.1 eV GaAs: 1.4 eV Diamond: 5.5 eV Ionisation

Ingredients of Gamma–Ray Tracking

Pulse Shape Analysisto decompose

recorded waves

··

Identified interaction points

(x,y,z,E,t)i

Reconstruction of tracks evaluating permutations

of interaction points

Digital electronicsto record and

process segment signals

1

23

4

Reconstructedgamma-rays

Highly segmented HPGe detectors

Page 17: Semiconductor detectors - Universität zu Köln · Semiconductor detectors Band gap between valence and conduction band: Ge: 0.7 eV Si: 1.1 eV GaAs: 1.4 eV Diamond: 5.5 eV Ionisation

Asymmetric AGATA Tripel Cryostat-integration of 111 high resolution spectroscopy channels

-cold FET technology for all signals

Challenges:

-mechanical precision

-microphonics

-noise, high frequencies

-LN2 consumption

Page 18: Semiconductor detectors - Universität zu Köln · Semiconductor detectors Band gap between valence and conduction band: Ge: 0.7 eV Si: 1.1 eV GaAs: 1.4 eV Diamond: 5.5 eV Ionisation

Electron mobility measurements

-collimated 60keV Am line

- 1cm x 10° 336 responses

-averaged, crosstalk corrected

-chi square optimized simulation

6 Electron mobility par. &

4 Space Charge par.

CoreSeg1

Seg2

Seg6

10º

CoreSeg1

Seg2

Seg6

20º

CoreSeg1

Seg2

Seg6

30º

CoreSeg1

Seg2

Seg6

Page 19: Semiconductor detectors - Universität zu Köln · Semiconductor detectors Band gap between valence and conduction band: Ge: 0.7 eV Si: 1.1 eV GaAs: 1.4 eV Diamond: 5.5 eV Ionisation

Hole mobility measurements

Collimator-356keV collimated133Ba line

-Needs no 90°Compton coincidence!

-Angle selection via transients

-Single events selection via risetime

-7cm depth: no geometry effect

6 Hole mobility parameters

Core Seg7

Seg12

Seg8

10º

Core Seg7

Seg12

Seg8

20º

Core Seg7

Seg12

Seg8

30º

Core Seg7

Seg12

Seg8

Page 20: Semiconductor detectors - Universität zu Köln · Semiconductor detectors Band gap between valence and conduction band: Ge: 0.7 eV Si: 1.1 eV GaAs: 1.4 eV Diamond: 5.5 eV Ionisation

Pulse Shape Analysis Concept

B4 B5B3

C4 C5C3

CORE

A4 A5A3

C4

D4

E4 F4

A4

B4

x

y

z = 46 mm791 keV deposited in segment B4

measured

Library

Page 21: Semiconductor detectors - Universität zu Köln · Semiconductor detectors Band gap between valence and conduction band: Ge: 0.7 eV Si: 1.1 eV GaAs: 1.4 eV Diamond: 5.5 eV Ionisation

Pulse Shape Analysis Concept

B4 B5B3

C4 C5C3

CORE

A4 A5A3

C4

D4

E4 F4

A4

B4

x

y

z = 46 mm791 keV deposited in segment B4

(10,10,46)

measuredcalculated

Page 22: Semiconductor detectors - Universität zu Köln · Semiconductor detectors Band gap between valence and conduction band: Ge: 0.7 eV Si: 1.1 eV GaAs: 1.4 eV Diamond: 5.5 eV Ionisation

Pulse Shape Analysis Concept

B4 B5B3

C4 C5C3

CORE

A4 A5A3

C4

D4

E4 F4

A4

B4

x

y

z = 46 mm791 keV deposited in segment B4

(10,15,46)

measuredcalculated

Page 23: Semiconductor detectors - Universität zu Köln · Semiconductor detectors Band gap between valence and conduction band: Ge: 0.7 eV Si: 1.1 eV GaAs: 1.4 eV Diamond: 5.5 eV Ionisation

Pulse Shape Analysis Concept

B4 B5B3

C4 C5C3

CORE

A4 A5A3

C4

D4

E4 F4

A4

B4

x

y

z = 46 mm791 keV deposited in segment B4

(10,20,46)

measuredcalculated

Page 24: Semiconductor detectors - Universität zu Köln · Semiconductor detectors Band gap between valence and conduction band: Ge: 0.7 eV Si: 1.1 eV GaAs: 1.4 eV Diamond: 5.5 eV Ionisation

Pulse Shape Analysis Concept

B4 B5B3

C4 C5C3

CORE

A4 A5A3

C4

D4

E4 F4

A4

B4

x

y

z = 46 mm791 keV deposited in segment B4

(10,25,46)

measuredcalculated

Page 25: Semiconductor detectors - Universität zu Köln · Semiconductor detectors Band gap between valence and conduction band: Ge: 0.7 eV Si: 1.1 eV GaAs: 1.4 eV Diamond: 5.5 eV Ionisation

Pulse Shape Analysis Concept

B4 B5B3

C4 C5C3

CORE

A4 A5A3

C4

D4

E4 F4

A4

B4

x

y

z = 46 mm791 keV deposited in segment B4

(10,30,46)

measuredcalculated

Page 26: Semiconductor detectors - Universität zu Köln · Semiconductor detectors Band gap between valence and conduction band: Ge: 0.7 eV Si: 1.1 eV GaAs: 1.4 eV Diamond: 5.5 eV Ionisation

Pulse Shape Analysis Concept

Result of Grid Searchalgorithm

R. VenturelliB4 B5B3

C4 C5C3

CORE

A4 A5A3

C4

D4

E4 F4

A4

B4

x

y

z = 46 mm791 keV deposited in segment B4

(10,25,46)

measuredcalculated

Page 27: Semiconductor detectors - Universität zu Köln · Semiconductor detectors Band gap between valence and conduction band: Ge: 0.7 eV Si: 1.1 eV GaAs: 1.4 eV Diamond: 5.5 eV Ionisation

g-spectrometer and ancillary detectors

Detection of light charged particles

Separation of different

light charged particles

Page 28: Semiconductor detectors - Universität zu Köln · Semiconductor detectors Band gap between valence and conduction band: Ge: 0.7 eV Si: 1.1 eV GaAs: 1.4 eV Diamond: 5.5 eV Ionisation

Experimental set-up: T-REX & MINIBALL

beam

MINIBALL

• 24 HPGe

• 6-fold segmented

• ≈ 3% @ 1.3 MeV

beam

Page 29: Semiconductor detectors - Universität zu Köln · Semiconductor detectors Band gap between valence and conduction band: Ge: 0.7 eV Si: 1.1 eV GaAs: 1.4 eV Diamond: 5.5 eV Ionisation

Scintillator detectors for light charged particles

Microball inside Gammasphere

Page 30: Semiconductor detectors - Universität zu Köln · Semiconductor detectors Band gap between valence and conduction band: Ge: 0.7 eV Si: 1.1 eV GaAs: 1.4 eV Diamond: 5.5 eV Ionisation

Energy resolution and `kinematic correction`

g- energy resolution is

determined by:

• Doppler effect and

opening angle of

Ge-detectors

• energy loss in target

(-> thin targets)

• kinematic of recoiling

nuclei (direction and

velocity)

Page 31: Semiconductor detectors - Universität zu Köln · Semiconductor detectors Band gap between valence and conduction band: Ge: 0.7 eV Si: 1.1 eV GaAs: 1.4 eV Diamond: 5.5 eV Ionisation

Scintillators for neutron detection