Proposal for Combined Conducted and Radiated Emission ... · Proposal for combined conducted and...
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Proposal for combined conducted and
radiated emission modelling for Integrated
Circuit
EMC-Compo 2017 workshop
Russia, Saint-Petersburg
Sébastien Serpaud, Chaimae Ghfiri, Alexandre Boyer, André Durier
July 6, 2017
• Intro : state of the art about emission modelling of IC
• ICEM-RE modeling approaches:
1. From ICEM CE (proposal method)
2. From NFS measurements (“current” method)
• Conclusion
Agenda
2
• IEC 62433-2 - EMC IC modelling – Part 2: Models of integrated circuits for EMI behavioural
simulation – Conducted emissions modelling (ICEM-CE) - Edition 2.0, January 2017, IEC• 2016 : C. Ghfiri, A. Durier, A. Boyer, S. Ben Dhia, C.Marot “Construction of a Integrated Circuit emission model of a FPGA” APEMC 2016, Shenzhen, China
• 2010 : K.R. Aravind Britto, R. Dhanasekaran, R. Vimala, K. Baskaran; ”EMC analysis of PCB using ICEM model”; 2010 IEEE International Conference on EMC,
Ramanathapuram, India
• 2009 : S. Serpaud, J. L. Levant, Y. Poiré, M. Meyer, S. Tran, "ICEM-CE extraction methodology", EMC Compo 2009, Nov. 17-19, 2009, Toulouse, France
• 2009 : E. Rogard, B. Vrignon, J. Shepherd, E. Sicard, "Characterization and Modelling of Parasitic Emission of a 32-bit Automotive Microcontroller Mounted on 2
Types of BGA", IEEE EMC Symp., Austin, Texas, USA, Aug. 2009.
• 2008 : C Labussiére-Dorgan; S Bendhia; E Sicard; J Tao; H J Quaresma; C Lochot; B Vrignon; “Modeling the Electromagnetic Emission of a Microcontroller Using
a Single Model”; IEEE Transactions on EMC, 2008, Volume: 50
• 2007 : JL Levant, "Mise en place d'une démarche d'intégration des contraintes CEM dans le flot de conception des circuits intégrés", PHD, 2007
• 2006 : T. Steinecke, D. Hesidenz, E. Miersch “EMI modeling and simulation in the IC design process”; EMC-Zurich;17th International Zurich Symposium on EMC
• 2006 : F Lafon, F De Daran; “Analyse de risque au niveau système par l'exploitation du modèle ICEM"; Colloque CEM06, At Saint Malo, France
• 2004 : F Lafon, O Maurice, F De Daran, C Lochot, S Calvet; “Exploitation of the ICEM model in an automotive application” EMC COMPO 2004, Angers, France
• 2004 : M. Ramdani; J.-L. Levant; R. Perdriau “ICEM model extraction: a case study” International Symposium on EMC, 2004
• 2003 : JL Levant; M Ramdani; R Perdriau; “ICEM modelling of microcontroller current activity”; Microelectronics Journal, Vol 35, Issue 6, June 2004, p501-507
• 2003 : C. Lochot ; J.-L. Levant; “ICEM: a new standard for EMC of IC definition and examples” IEEE International Symposium on EMC, 2003
• 2002 : JL Levant; M Ramdani; R Perdriau; “Power- Supply Network Modeling”; 3rd International Workshop on EMC of IC, Nov 2002, Toulouse, France
• IEC-62433-3 - EMC IC modelling – Part 3: Models of integrated circuits for EMI behavioural
simulation – Radiated emissions modelling (ICEM-RE) - Edition 1.0, January 2017, IEC.• 2015 : A Ramanujan, F Lafon, P Fernandez-Lopez; “Radiated Emissions Modelling From Near-Field Data – Toward International Standards”, APEMC 2015, Taipei
– Taiwan
State of the art about IC emission modeling
3
• One block for one specific issue
• Each bloc is build according to a specific
extraction method
• "Matriochkas approach”
• Proven / predicted approach
General structure of model
4
IALoad PDNPCB
ICEM-CEEBEM-CE
A Ramanujan, F Lafon, P Fernandez-Lopez; “Radiated Emissions ModellingFrom Near-Field Data – Toward International Standards”, APEMC 2015, Taipei – Taiwan
ICEM-CE ICEM-RE
• Based on NFS measurements
• Quick modeling process (full automated)
• Usable for far field prediction
• State of the art:
• Two models :
2x workflows (measurement methods)
2x software (model format, license)
2x times / costs
• Proposal: Re-use ICEM-CE to build ICEM-RE
• Only one modeling process
• Combined all advantage of two approaches
• Only one model / simulation tools for both conducted and radiated emission
analyse
• Industrially compatible with costs and delays
State of the art about IC emission modeling
5
• Intro : state of the art about emission modelling of IC
• ICEM-RE modeling approaches
1. From ICEM-CE (proposal method)
2. From NFS measurements (“current” method)
• Conclusion
Agenda
6
• DUT : Spartan 6 family of Xilinx
Device Under Test presentation
July 2017 - EMC-Compo 2017 – Saint Petersburg - Russia 7
X
Y
Area of
measurement
T9 output ball
C16 output ball
T8 input ball
Activity rate
(% LUT used)
Configurations
With periodical switching
of two I/Os at 8 MHz (T9
and C16)
Without IOs
switching
20 % “Config 20% IOon” “Config 20% IOoff”
40 % “Config 40% IOon” “Config 40% IOoff”
90 % “Config 90% IOon” “Config 90% IOoff”
• ICEM-RE model from ICEM-CE model
• ICEM-CE : ”Methodology of modelling of the internal activity of a FPGA for conducted emission prediction purpose” C. Ghfiri1,2,3, A. Boyer2,3, A.
Durier1, S. Ben Dhia2,3; EMC-Compo2017, Saint Petersburg; Russia
• EAN : Electrical Antenna Network
ICEM-RE modelling approach from ICEM-CE
8
IALoad PDNPCB
ICEM-CEEBEM-CE
ICEM-RE
EAN
ZPDN
i
IA
x
y
• Physical PDN structure of FPGA – from XRAY
ICEM-RE modelling approach from ICEM-CE
Package structure of FPGA from X-Ray
Vccint
Vccaux
GND
Vcc0
TOP Layer Bottom Layer
Top of Die
Top of substrate
Top of FPGA
0.65
Top of PCB
1.151.4
0
Dimension in mm
DieAu Bond Wire Epoxy Overmold
Top
Copper
BT/FR5 coreBottom
Copper
Solder ball
Two-layer plastic BGA 256 (FT256) package
Xray from Continental
• Physical PDN structure of FPGA – from XRAY & from pinout
ICEM-RE modelling approach from ICEM-CE
EAN bloc from Pinout of package
(115 dipoles)
Package structure of FPGA from X-Ray
EAN bloc from X-Ray of package
(235 dipoles)
Vccint
Vccaux
GND
Vcc0
• Extraction EAN bloc – from Pinout
ICEM-RE modelling approach from ICEM-CE
Hx HzHy
-22.7dBµA/m -22.2dBµA/m-23.3dBµA/m
-23.6dBµA/m -22.3dBµA/m-19.5dBµA/m
y
x
C16 IO Activity @8MHz (90%LUT with IO config)
NFS
measurement
Simulation
Simulation done on IC-EMC software (www.ic-emc.org)
• Extraction EAN bloc – from Xray
ICEM-RE modelling approach from ICEM-CE
y
x
C16 IO Activity @8MHz (90%LUT with IO config)
Hx HzHy
-22.7dBµA/m -22.2dBµA/m-23.3dBµA/m
-26.6dBµA/m -25.6dBµA/m-22.3dBµA/m
NFS
measurement
Simulation
Simulation done on IC-EMC software (www.ic-emc.org)
• Extraction EAN bloc – from Pinout
ICEM-RE modelling approach from ICEM-CE
y
x
Core Activity @16MHz (90% LUT without IO config)
NFS
measurement
Simulation
Hx Hy HzHxmax = -31dBµA/m Hymax = -31.5dBµA/m Hzmax = -32.7dBµA/m
Hxmax = -26.1dBµA/m Hymax = -27.5dBµA/m Hzmax = -33.4dBµA/m
Simulation done on IC-EMC software (www.ic-emc.org)
• Extraction EAN bloc – from XRay
ICEM-RE modelling approach from ICEM-CE
y
x
Core Activity @16MHz (90% LUT without IO config)
NFS
measurement
Simulation
Hx Hy HzHxmax = -31dBµA/m Hymax = -31.5dBµA/m Hzmax = -32.7dBµA/m
No simulation result
(simulation tool limitation)
Simulation done on IC-EMC software (www.ic-emc.org)
• Intro : state of the art about emission modelling of IC
• ICEM-RE modeling approaches:
1. From ICEM CE (proposal method)
2. From NFS measurements (“current” method)
• Conclusion
Agenda
15
• Direct extraction IECM-RE from NFS measurement
ICEM- RE extraction method from NFS
measurement
y
x
C16 IO Activity @8MHz (90%LUT with IO config)
NFS
measurement
DipoleHeight
[mm]
|Htan|
[dbA/m]
I(f)
[µA]
I(t)
[mA]Type
0 0.65 -35.9 623 6.1 Core
1 0.65 -37.5 518 5 Core
2 1.15 - 0.65 -36 418 3.1 IO
3 1.15 -31 569 5.5 IO
4 1.15 - 0.65 -35 359 3.5 IO
5 0.65 -38.2 478 4.6 Core
6 0.65 -36.6 575 5.6 Core
DipoleHeight
[mm]
|Htan|
[dbA/m]
I(f)
[µA]
I(t)
[mA]Type
A 0.65 -38 549 4.7 Core
B 1.15 -31.6 531 5.2 Core
C 0.65 -38.5 462 4.5 IO
D 0.65 -39/-41 550 4.7/3.3 IO
E 0.65 -35.2 675.5 6.6/4 IO
a 1.15 - 0.65 -39 226.5 2.2 Core
b 1.15 - 0.65 -32.2 648.4 4.8 Core
c 0.65 -41.8 316 3.1 Core
d 0.65 -39 550 4.7 IO
e 0.65 -39/-41 550 4.7/3.3 Core
Hx Hy Hz
1
2
3
4
5
6
7
a
A B
C
D
b
c
0
d
Ee
Hxmax = -31dBµA/m Hymax = -31.5dBµA/m Hzmax = -32.7dBµA/m
• EAN block Extraction – from NFS Measurement
ICEM-RE extraction approach
EAN bloc from NFS Measurement
(17 dipoles)
• FPGA Activity analyse - 40% without IO
• NFSev on FPGA - Hz component
Activities of FPGA Analyse from NFS
measurement
18
14
5
2
3
1
2
T8 IO activity
3
4
5
T8 IO activity
T8 IO activity « filter »
Core activity
Core activity
T8 IO activity « filter »
Core activity « filter »
Core activity « filter »
Localization of picked point:
• Radiated activity (40% without IO configuration)
ICEM- RE extraction method from NFS
measurement
Activity
type
Frequency domain parameters Time domain
parameters|Htang|max
[dBµA/m]
|Af|max*
[mA]
F0
[MHz]
Fc1
[MHz]
Fc2
[MHz]
|At|max
[mA]
T
[ns]
Ton
[ns]
Tr
[ns]
Core90% 98.5 1.7
16 80 80
16.6
62.5 3.2 3.2Core40% 92.8 0.881 8.6
Core20% 89.1 0.575 5.6
Input 87.6 0.484 16 310 550 15.1 62.5 1 0.58
Output 97.8 1.5 8 200 280 61.2 125 1.6 1.15
T8 IO activity
Core activity
* Value compute from equation (2) with h=1.15mm; R=1.825mm
tA.2
log20
1
0
.
..2log20
c
tf
F
FAA
2
0
.
..2log20
c
t
F
FA
r
cT
F.
12
Repetitive Trapezoidal Pulse:
0
Tr Tf
Ton
T
Toff
Tr
on
cT
F.
11
tA
Freq
0
Magnitude
-20dB/decade
-40dB/decade
Magnitude in dB
Core DutyCycle=5.12%
Input DutyCycle=1.6%
Output DutyCycle=1.28%
Top of Die
Top of substrate
Top of FPGA
0.65
Top of PCB
1.151.4
0
Dimension in mm
Center of loop2.5
DieAu Bond Wire Epoxy Overmold
Top
Copper
BT/FR5 coreBottom
Copper
Solder ball
1.35
(3)
R
t
Htan
R
t
Htan
Ground plane
P P
I I
I
h
Image current
h
RandhRtht
Assume
;,
:
(4)
ht
htRRHI
2
2.2 tan
htRR
htIH
2
2
2tan
Radiated Dipole Equation
• Direct extraction ICEM-RE from NFS measurement
ICEM- RE extraction method from NFS
measurement
y
x
C16 IO Activity @8MHz (90%LUT with IO config)
NFS
measurement
Simulation
Hx Hy Hz
1
2
3
4
5
6
7
a
A B
C
D
b
c
0
d
Ee
Hxmax = -31dBµA/m Hymax = -31.5dBµA/m Hzmax = -32.7dBµA/m
Hxmax = -32.5dBµA/m Hymax = -32.5dBµA/m Hzmax = -32.6dBµA/m
Simulation done on IC-EMC software (www.ic-emc.org)
• Direct extraction ICEM-RE from NFS measurement – Hz field component
ICEM- RE extraction method from NFS
measurement
21
y
x
Magnitude Measurement Vector Measurement Simulation
Magnitude of Field
Phase of Field
Simulation done on IC-EMC software (www.ic-emc.org)
• Two complementary approaches (from NFS measurement - from ICEM-CE)
• Select one approach following industrial constraints:
• Ex: far field extrapolation : use ICEM-RE based on NFS measurement
• Ex: decoupling capacitor optimization : use ICEM-RE based on ICEM-CE
• Complex model of PDN/EAN (number of element)
• Limitation of manual approach (> 200 dipoles for BGA 256)
• Need to automate ICEM-RE extraction
• 3D simulation software is necessary
• Perspectives:
• modelling radiated coupling between each component (EBEM-RE)
Conclusion
July 2017 - EMC-Compo 2017 – Saint Petersburg - Russia 22
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Thank for your attention
Sébastien Serpaud, Chaimae Ghfiri, Alexandre Boyer, André
Durier
23