On wafer small signal characterization beyond 100 GHz for...
Transcript of On wafer small signal characterization beyond 100 GHz for...
On wafer small signal characterization beyond 100 GHz for compact model assessment
Sebastien Fregonese#1, Marina Deng#1, Marco Cabbia#1, Chandan Yadav#1, Soumya Ranjan Panda #1&2, Thomas Zimmer#1
#1Université Bordeaux / CNRS, laboratoire IMS, FRANCE
#2IIT Madras, India
WS-01 Recent advances in SiGe BiCMOS: technologies, modelling & circuits for 5G, radar & imaging
http://tima.univ-grenoble-alpes.fr/taranto/
- 2 -WS-01 - Recent advances in SiGe BiCMOS: technologies, modelling and circuits for 5G, radar and imaging
• Motivation
• EM simulation vs Measurement up to 500 GHz
• HBT measurement up to 500 GHz
• Conclusion and Outlooks
Outline
- 3 -WS-01 - Recent advances in SiGe BiCMOS: technologies, modelling and circuits for 5G, radar and imaging
Motivation
Accurate S-parametermeasurements above 110 GHz =
big challenge
RF circuit/system design
Accurate compact modelsRelies on
Extraction of specific parametersValidation
Transistor HF Characterization Challenges
- 4 -WS-01 - Recent advances in SiGe BiCMOS: technologies, modelling and circuits for 5G, radar and imaging
• Calibration & De-embedding Issues
Motivation
Standard procedure (2-step calibration)
Reference plane after calibration
Vectorial Network Analyzer (VNA)
Port 1 Port 2
mmW head mmW headRF probes
Impedance Standard SubstrateFrom Cascade Microtech
1Off-wafer
calibration on ISS
- 5 -WS-01 - Recent advances in SiGe BiCMOS: technologies, modelling and circuits for 5G, radar and imaging
• Calibration & De-embedding Issues
Motivation
Different electrostatic environment
calibration range of validity ?
Reference planeafter calibration
Ref. plane afterde-embedding(DUT terminals)
2On-wafer
de-embedding
- 6 -WS-01 - Recent advances in SiGe BiCMOS: technologies, modelling and circuits for 5G, radar and imaging
• Calibration & De-embedding Issues
Motivation
Different electrostatic environment
calibration range of validity ?
Reference planeafter calibration
Ref. plane afterde-embedding(DUT terminals)
Same electrostatic environment
calibration range of validity ?
2On-wafer
de-embedding
1On-wafer TRL
calibration
- 7 -WS-01 - Recent advances in SiGe BiCMOS: technologies, modelling and circuits for 5G, radar and imaging
• S parameters measurement above 110 GHz requires to answer the following questions:
• Which calibration & de-embedding method should I use ?
• Do I really measure my DUT ? Impact of adjacent structures
Impact of probes
=> Need for reproducing measurement results with EM simulation tools
Motivation
- 8 -WS-01 - Recent advances in SiGe BiCMOS: technologies, modelling and circuits for 5G, radar and imaging
EM simulation vs Measurement up to 500 GHz
SOLT on ISS De-embedding
Extraction of SOLT
parameters using ISS TRL
Simulation of :ThruReflect (open, Short) LinesLoad
Simulation of :DUTPad openPad short Intrinsic DUT
ISS SOLT
- 9 -WS-01 - Recent advances in SiGe BiCMOS: technologies, modelling and circuits for 5G, radar and imaging
• Characterisation of the ISS calibration kit for SOLT
EM simulation vs Measurement up to 500 GHz
Interferometry image of the through from the ISS (GGB-CS15)
Data sheet of
CS15 delivered by Pico-probe GGB
industries used for 50-125 µm probe
pitch
EM simulation for 50 µm probe pitch (extracted from TRL at 60 GHz and 250
GHz)
Open 3.25fF 3.2-3.4fF
Short 2pH 1.5 pH-2.5pH
Load 1.5fF 1.4-2.2fF
Through 1.13ps 1.10ps
- 10 -WS-01 - Recent advances in SiGe BiCMOS: technologies, modelling and circuits for 5G, radar and imaging
• Silicon test structures:
EM simulation vs Measurement up to 500 GHz
M1 Cu
M2 Cu
M3 Cu
M4 Cu
M6 Cu
M7 Alu
M5 Cu
Two thickcopper + onealuminiumlayer
Four thincopper layers
Infineon’s B11HFC BEOL
Reflect pad open
Line of 160µm
Thru of 50µm
Pad short
Transistor open Meander line.
Load
The probe pitch is 50 µm
- 11 -WS-01 - Recent advances in SiGe BiCMOS: technologies, modelling and circuits for 5G, radar and imaging
EM simulation vs Measurement up to 500 GHz
SOLT on ISS De-embedding
Extraction of SOLT
parameters using ISS TRL
Simulation of :ThruReflect (open, Short) LinesLoad
Simulation of :DUTPad openPad short Intrinsic DUT
ISS SOLT
- 12 -WS-01 - Recent advances in SiGe BiCMOS: technologies, modelling and circuits for 5G, radar and imaging
• Pad short & Pad open
EM simulation vs Measurement up to 500 GHz
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-2
-1
0
1
2
3
4
0 100 200 300 400 500
mag
(Sii)
(d
B)
freq (GHz)
Measurement with SOLT cal.
EM sim. with SOLT cal.
0
30
60
90
120
150
180
0 100 200 300 400 500
ph
ase(
S ii)
(°)
freq (GHz)
Measurement with SOLT cal.
EM sim. with SOLT cal.
PAD SHORT after SOLT calibration
Measurement vs Simulation
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-2
-1
0
1
2
3
4
0 100 200 300 400 500
mag
(Sii)
(d
B)
freq (GHz)
Measurement with SOLT cal.
EM sim. with SOLT cal.
-120
-90
-60
-30
0
30
60
90
120
150
180
0 100 200 300 400 500p
has
e(S i
i) (°
)freq (GHz)
Measurement with SOLT cal.
EM sim. with SOLT cal.
PAD OPEN after SOLT calibration
Measurement vs Simulation
Ref. plane
Ref. plane
- 13 -WS-01 - Recent advances in SiGe BiCMOS: technologies, modelling and circuits for 5G, radar and imaging
EM simulation vs Measurement up to 500 GHz
SOLT on ISS De-embedding
Extraction of SOLT
parameters using ISS TRL
Simulation of :ThruReflect (open, Short) LinesLoad
Simulation of :DUTPad openPad short Intrinsic DUT
ISS SOLT
- 14 -WS-01 - Recent advances in SiGe BiCMOS: technologies, modelling and circuits for 5G, radar and imaging
• Calibration and de-embedding : transistor open
EM simulation vs Measurement up to 500 GHz
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-2
-1
0
1
0 100 200 300 400 500
mag
(S2
2)
(dB
)
freq (GHz)
Measurement Simulation with SOLT cal.
EM intrinsic
SOLT ISS
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-60
0
0 100 200 300 400 500
ph
ase(
S 22)
(°)
freq (GHz)
Measurement Simulation
EM intrinsic
SOLT ISS
Ref. plane
- 15 -WS-01 - Recent advances in SiGe BiCMOS: technologies, modelling and circuits for 5G, radar and imaging
EM simulation vs Measurement up to 500 GHz
TRL on wafer with Zc correction
Simulation of :ThruReflect LinesLoad
Simulation of :DUTPad openPad short
Intrinsic DUT
On wafer TRL
simulation
- 16 -WS-01 - Recent advances in SiGe BiCMOS: technologies, modelling and circuits for 5G, radar and imaging
• Calibration and de-embedding : transistor open
EM simulation vs Measurement up to 500 GHz
-3
-2
-1
0
1
0 100 200 300 400 500
mag
(S2
2)
(dB
)
freq (GHz)
Measurement Simulation with SOLT cal.
EM intrinsic
SOLT ISS
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-2
-1
0
1
0 100 200 300 400 500
mag
(S2
2)
(dB
)
freq (GHz)
Measurement Simulation
EM intrinsic
TRL on wafer
-180
-120
-60
0
0 100 200 300 400 500
ph
ase(
S 22)
(°)
freq (GHz)
Measurement Simulation
EM intrinsic
SOLT ISS
-180
-120
-60
0
0 100 200 300 400 500
ph
ase(
S 22)
(°)
freq (GHz)
Measurement Simulation
EM intrinsic
TRL on wafer
Ref. plane
- 17 -WS-01 - Recent advances in SiGe BiCMOS: technologies, modelling and circuits for 5G, radar and imaging
• Calibration and de-embedding : meander line
EM simulation vs Measurement up to 500 GHz
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-2
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0
1
2
3
0 100 200 300 400 500m
ag(S
ij) (
dB
)
freq (GHz)
Measurement Simulation
EM intrinsic
SOLT ISS
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-1
0
1
2
3
0 100 200 300 400 500
mag
(Sij)
(d
B)
freq (GHz)
Measurement Simulation
EM intrinsic
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-100
-50
0
50
100
150
200
0 100 200 300 400 500
ph
ase(
S ij)
(°)
freq (GHz)
Measurement Simulation
EM intrinsic
-200
-150
-100
-50
0
50
100
150
200
0 100 200 300 400 500
ph
ase(
S ij)
[°]
freq (GHz)
Measurement Simulation
EM intrinsic
SOLT ISS
Ref. plane
- 18 -WS-01 - Recent advances in SiGe BiCMOS: technologies, modelling and circuits for 5G, radar and imaging
• Limitation of the SOLT ISS parameters:• Frequency dependence
• Probe dependence
• Substrate to probe coupling• Probe dependence
• Cal-kit material and wafer material
• Limitation of the de-embedding
=> TRL on ISS is used to identify these 3 limitations
EM simulation vs Measurement up to 500 GHz
- 19 -WS-01 - Recent advances in SiGe BiCMOS: technologies, modelling and circuits for 5G, radar and imaging
• SOLT on ISS and TRL ISS with pad-open pad-short de-embedding and on wafer TRL versus intrinsic simulation
EM simulation vs Measurement up to 500 GHz
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-2
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0
1
0 100 200 300 400 500
mag
(S2
2)
(dB
)
freq (GHz)
On wafer TRL ZCISS cal TRL and de-embeddingISS cal SOLT and de-embedding
intrinsic
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-150
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-30
0
0 100 200 300 400 500
ph
ase(
S 22)
(deg
)
freq (GHz)
On wafer TRL ZCISS cal TRL and de-embeddingISS cal SOLT and de-embedding
intrinsic
• ISS SOLT and TRL give similar results on the phase but deviate slightly from the intrinsic result from 50 GHz
Deviation is due to electrostatic environment and/or de-embedding procedureSOLT calibration itself and parameters cannot explain the deviation of the
phase
- 20 -WS-01 - Recent advances in SiGe BiCMOS: technologies, modelling and circuits for 5G, radar and imaging
• Impact of adjacent structures:
EM simulation vs Measurement up to 500 GHz
EM simulation @ 500 GHz
Too dense layout !
- 21 -WS-01 - Recent advances in SiGe BiCMOS: technologies, modelling and circuits for 5G, radar and imaging
• Impact of adjacent structures:
EM simulation vs Measurement up to 500 GHz
Ref. plane
With adjacent devices in Thru,
Refl., Line and DUT
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-1
0
0 100 200 300 400 500
mag
(S2
1)
(dB
)
Frequency (GHz)
Measurement + TRL cal.
EM sim. +TRL cal.
-2
-1
0
0 100 200 300 400 500
mag
(S21
) (d
B)
Frequency (GHz)
Measurement + TRL cal.
EM sim. with neighboring structures +TRL cal.
Adjacent structures modifies the result
- 22 -WS-01 - Recent advances in SiGe BiCMOS: technologies, modelling and circuits for 5G, radar and imaging
• Impact of probe topology• On wafer calibration (STMicroelectronics B55 technology)
EM simulation vs Measurement up to 500 GHz
EM sim. setup
IEEE ICMTS 2018IEEE ICMTS 2018
220 GHz Picoprobe model
- 23 -WS-01 - Recent advances in SiGe BiCMOS: technologies, modelling and circuits for 5G, radar and imaging
• STMicroelectronics B55 technology• On wafer TRL + short-open de-embedding
• Improved test structures (Pads layout, more space between structures, …)
• Measurement vs HICUM compact model with substrate extension
Application to the HBT
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0 100 200 300 400 500
Mag
(S)
[dB
]
freq [GHz]
HBT B550.09*4.8µm²VBE=0.85 VVCB=0 V
S21
S12
S11
S22
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-120
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0
60
120
180
0 100 200 300 400 500
Ph
ase(
S) [
°]
freq [GHz]
HBT B550.09*4.8µm²VBE=0.85 VVCB=0 V
S21
S12
S11
S22
Characterisation & modelling is uncertain above 350 GHz
HICUM Meas.
- 24 -WS-01 - Recent advances in SiGe BiCMOS: technologies, modelling and circuits for 5G, radar and imaging
• STMicroelectronics B55 technology
Application to the HBT
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0
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30
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0 100 200 300 400 500
H2
1[d
B]
freq [GHz]
HBT B55 AE=0.09*4.8µm²VCB=0V
VBE=0.85V
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0
5
10
15
20
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30
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40
0 100 200 300 400 500U
[d
B]
freq [GHz]
HBT B55AE=0.09*4.8µm²VCB=0V
VBE=0.85V
HICUMMeasurement HICUM
Measurement
- 25 -WS-01 - Recent advances in SiGe BiCMOS: technologies, modelling and circuits for 5G, radar and imaging
• The simulation methodology has been proven to be able to accurately reproduce the impact of the measurement methodology and set-up
• ISS calibration (SOLT or TRL) with OS de-embedding is not accurate above 200 GHz
• Adjacent structure have an impact on measurement results => requires optimized layout
• HBT: On wafer TRL and especially SO de-embedding => to be verified above 350 GHz
Conclusion
The research leading to these results has received funding from the European Commission'sECSEL Joint Undertaking under grant agreement n° 737454 - project TARANTO - and therespective Public Authorities of France, Austria, Germany, Greece, Italy and Belgium.
Thank you
- 26 -WS-01 - Recent advances in SiGe BiCMOS: technologies, modelling and circuits for 5G, radar and imaging
- 27 -WS-01 - Recent advances in SiGe BiCMOS: technologies, modelling and circuits for 5G, radar and imaging
• Our recent references:
• S. Fregonese et al., Comparison of on-wafer TRL calibration to ISS SOLT calibration with open-short de-embedding up to 500 GHz, IEEE Trans. Thz Sci., 2019
• S. Fregonese et al., On-wafer characterization of silicon transistors up to 500 GHz and analysis of measurement discontinuities between the frequency bands, , IEEE Trans. on MTT 2018
• M. Deng, “RF Characterization of 28 nm FD-SOI Transistors Up To 220 GHz”, EUROSOI ULIS, 2019
• C. Yadav et al., On the Variation in Short-Open De-embedded S-parameter Measurement of SiGe HBT upto 500 GHz, 2019 GeMiC
• C. Yadav et al., Analysis of Test Structure Design Induced Variation in on Si On-wafer TRL Calibration in sub-THz, 2019, ICMTS
References