NIKO-SEM N-Channel Enhancement Mode P2804BDG · 2017-02-20 · REV 1.0 1 Aug-10-2009 N-Channel...
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REV 1.0 1 Aug-10-2009 N-Channel Enhancement Mode Field Effect Transistor P2804BDG TO-252 Halogen-Free & Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (T C = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage V GS ±20 V T C = 25 °C 25 Continuous Drain Current T C = 100 °C I D 16 Pulsed Drain Current 1 I DM 75 Avalanche Current I AS 26 A Avalanche Energy L = 0.1mH E AS 34 mJ T C = 25 °C 31 Power Dissipation T C = 100 °C P D 12.5 W Operating Junction & Storage Temperature Range T j , T stg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case R JC 4 Junction-to-Ambient R JA 50 °C / W 1 Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (T C = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT STATIC Drain-Source Breakdown Voltage V (BR)DSS V GS = 0V, I D = 250A 40 Gate Threshold Voltage V GS(th) V DS = V GS , I D = 250A 1 2 3 V Gate-Body Leakage I GSS V DS = 0V, V GS = ±20V ±250 nA V DS = 32V, V GS = 0V 1 Zero Gate Voltage Drain Current I DSS V DS = 30V, V GS = 0V, T J = 125 °C 10 A On-State Drain Current 1 I D(ON) V DS = 10V, V GS = 10V 75 A V GS = 10V, I D = 18A 15 28 Drain-Source On-State Resistance 1 R DS(ON) V GS = 5V, I D = 12A 27 50 mΩ 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V (BR)DSS R DS(ON) I D 40V 28mΩ 25A G D S
Transcript of NIKO-SEM N-Channel Enhancement Mode P2804BDG · 2017-02-20 · REV 1.0 1 Aug-10-2009 N-Channel...
REV 1.0
1
Aug-10-2009
N-Channel Enhancement Mode Field Effect Transistor
P2804BDG TO-252
Halogen-Free & Lead-Free
NIKO-SEM
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Gate-Source Voltage VGS ±20 V
TC = 25 °C 25 Continuous Drain Current
TC = 100 °C ID
16
Pulsed Drain Current1 IDM 75
Avalanche Current IAS 26
A
Avalanche Energy L = 0.1mH EAS 34 mJ
TC = 25 °C 31 Power Dissipation
TC = 100 °C PD
12.5 W
Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case RJC 4
Junction-to-Ambient RJA 50 °C / W
1Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
LIMITS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX
UNIT
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 40
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1 2 3 V
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 nA
VDS = 32V, VGS = 0V 1 Zero Gate Voltage Drain Current IDSS
VDS = 30V, VGS = 0V, TJ = 125 °C 10 A
On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V 75 A
VGS = 10V, ID = 18A 15 28 Drain-Source On-State Resistance1 RDS(ON)
VGS = 5V, ID = 12A 27 50 mΩ
1. GATE 2. DRAIN 3. SOURCE
PRODUCT SUMMARY V(BR)DSS RDS(ON) ID
40V 28mΩ 25A G
D
S
REV 1.0
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Aug-10-2009
N-Channel Enhancement Mode Field Effect Transistor
P2804BDG TO-252
Halogen-Free & Lead-Free
NIKO-SEM
Forward Transconductance1 gfs VDS = 5V, ID = 18A 25 S
DYNAMIC
Input Capacitance Ciss 814
Output Capacitance Coss 172
Reverse Transfer Capacitance Crss
VGS = 0V, VDS = 20V, f = 1MHz
121
pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.6 Ω
Total Gate Charge2 Qg 17
Gate-Source Charge2 Qgs 4
Gate-Drain Charge2 Qgd
VDS =20V, VGS = 10V,
ID = 18A 5
nC
Turn-On Delay Time2 td(on) 4
Rise Time2 tr 8
Turn-Off Delay Time2 td(off) 14
Fall Time2 tf
VDD = 20V,
ID 18A, VGS = 10V, RGEN = 6Ω
4
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Forward Voltage1 VSD IS =18 A, VGS = 0V 1.3 V
Reverse Recovery Time trr 23 nS
Reverse Recovery Charge Qrr 19 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
REMARK: THE PRODUCT MARKED WITH “P2804BDG”, DATE CODE or LOT #
REV 1.0
3
Aug-10-2009
N-Channel Enhancement Mode Field Effect Transistor
P2804BDG TO-252
Halogen-Free & Lead-Free
NIKO-SEM
Source-Drain Diode Forward Voltage
Ciss
CossCrss
0.00E+00
2.00E+02
4.00E+02
6.00E+02
8.00E+02
1.00E+03
0 5 10 15 20 25 30
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -25 0 25 50 75 100 125 150
RDS(ON) ╳
VGS=10VID=18A
RDS(ON) ╳
RDS(ON) ╳
RDS(ON) ╳
RDS(ON) ╳
RDS(ON) ╳
RDS(ON) ╳
RDS(ON) ╳
RDS(ON) ╳
0
2
4
6
8
10
0 3 6 9 12 15 18
ID=18A
VDS=20V
0.2 0.4 0.6 0.8 1.0 1.2
1.0E+01TJ =150° C
TJ =25° C1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E+02
1.0E+03
1.4
Output Characteristics
ID, D
rain
-To-
Sour
ce C
urre
nt(A
)
Transfer Characteristics
ID, D
rain
-To-
Sour
ce C
urre
nt(A
) VGS, Gate-To-Source Voltage(V) VDS, Drain-To-Source Voltage(V)
On-Resistance VS Temperature
RD
S(O
N)O
N-R
esis
tanc
e(O
HM
)
TJ , Junction Temperature(˚C)
Capacitance Characteristic
C ,
Cap
acita
nce(
pF)
VDS, Drain-To-Source Voltage(V)
Gate charge Characteristics Characteristics
Qg , Total Gate Charge
VGS
, Gat
e-To
-Sou
rce
Volta
ge(V
)
VSD, Source-To-Drain Voltage(V)
IS ,
Sour
ce C
urre
nt(A
) 0 1 2 3 4 5
10
20
30
40
50
60
VG S = 4.5V
V G S = 10V
V GS = 5V
Tj=125° C
0
10
20
30
40
50
T j=-20° C
60
4.5 5.51.5 2.5 3.5
T j=25° C
VDS= 10V
REV 1.0
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Aug-10-2009
N-Channel Enhancement Mode Field Effect Transistor
P2804BDG TO-252
Halogen-Free & Lead-Free
NIKO-SEM
single Pluse
Duty Cycle=0.5
0.20.1
0.050.02
0.01
1.00E-03
1.00E-02
1.00E-01
1.00E+00
1.00E+01
1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
0
50
100
150
200
250
300
350
400
0.0001 0.001 0.01 0.1 1 10
SINGLE PULSERθJC = 4˚C/WTC=25˚C
Note
1.Duty cycle, D= t1 / t2 2.RthJC = 4 oC/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC
1ms
100us
DC10ms
0.1
1
10
100
1000
1 10 100
NOTE :1.VGS= 10V2.TC=25˚C3.RθJC = 4˚C/W4.Single Pulse
Operation in This Areais Limited by RDS(ON)
↓
Safe Operating Area Single Pulse Maximum Power Dissipation
ID ,
Dra
in C
urre
nt(A
)
Pow
er(W
)
Single Pulse Time(s) VDS, Drain-To-Source Voltage(V)
Transient Thermal Response Curve
r(t)
, Nor
mal
ized
Effe
ctiv
e
Tran
sien
t The
rmal
Res
ista
nce
T1 , Square Wave Pulse Duration[sec]
REV 1.0
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Aug-10-2009
N-Channel Enhancement Mode Field Effect Transistor
P2804BDG TO-252
Halogen-Free & Lead-Free
NIKO-SEM
