ABB has seven Corporate Research Cen-ters worldwide, one of them is in Baden-Dättwil, Switzerland. Approximately 220 researchers from more than 33 nations deliver leading-edge technologies and innovative solutions in the field of power electronics and current interruption & lim-itation, just to mention two focus areas. Their most recent achievement is the world’s first circuit breaker for high-volt-age direct current (HVDC). It combines a very fast mechanics with power electron-ics, and will be capable of ‘interrupting’ power flows equivalent to the output of a large power station within 5 milliseconds (Newsletter 1-13).Just recently, ABB announced to invest

$20 million in a new research lab for next generation high-power silicon and wide band-gap (WBG) semiconductor devices. This investment is in conjunction with the expansion of ABB’s semiconductor facto-ries in Lenzburg, Switzerland, and Prague, Czech Republic, where in the past few years more than $200 million have been invested. Ground breaking for the new fab in Baden-Dättwil was in March 2013 (pic-ture). The facility is planned to be in oper-ation in summer 2014. For more informa-tion see the interview with Dr. Jan-Henning Fabian, Power Electronics department manager at the Corporate Research Cen-ter in Baden-Dättwil, on page 2.

Page 5 − Application in focus: SiC ap-

plications − ABB Semiconductors Interna-

tional Sales Meeting 2013

Page 6 − Technology in focus: WBG

materials − Publications − calendar

Highlights

New high-power semiconductors research lab

news ABB Semiconductors September 2013

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Page 2 − Editorial − Interview with Dr. Jan-Henning

Fabian

Page 3 − Products in the pipeline − New qualified products − Phased-out products − Obsolete products − Lead time indicator

Page 4 − Product in focus: SiC power

devices − Portrait: Budaker Ltd. − Process change notifications

ABB news 10|10

Christoph Holtmann: Dr. Fabian, you are the manager of ABB’s Power Electronics department at the Corporate Research Center in Dättwil, Switzerland. Would you please tell us more about the new lab for power-electronics research?Jan-Henning Fabian: ABB Corporate Research - in close collabora-

tion with ABB Semiconductors - is extending the power device research and invests $20 million to build a new research lab for ABB’s next generation power semicon-ductors based on silicon as well as on wide bandgap materials like silicon carbide. The new building will have a total building footprint of 1,100 square meters with a 600 square meters state-of-the-art clean room being the heart of the building. Ground breaking was in March this year and we expect the new lab being opera-tional in summer 2014. This investment in power semiconductor research, following ABB’s recent investment of $200 million in its high-power semiconductor production plant in Lenzburg, Switzerland, clearly demonstrates that ABB sees a great potential in power electronics.Christoph Holtmann: Why does ABB such a big investment for power electronics in Switzerland?Jan-Henning Fabian: The physical proximity of the research lab in Dättwil and the high-power semiconductor factory in Lenzburg is a great advantage for the joint de-velopment of innovative new products based on existing and on new technologies. Further, with ABB’s Power Electronics and Medium Voltage Drives business units in Turgi, two world-class users of high-power semiconductors are also just next door, making Switzerland ABB’s center of competence for power electronics.Equally important for the new activities is the recruitment of highly educated scien-tists and researchers with the corresponding qualification in the field of power elec-tronics and semiconductors. In Switzerland, we see good opportunities in winning international experts for ABB.Christoph Holtmann: When do you think we can expect the first results on the next generation power semiconductors?Jan-Henning Fabian: In the new lab power semiconductors based on silicon, the today’s standard material for high-power semiconductors, as well as on wide band-gap materials like silicon carbide will be researched. Research based on silicon power semiconductors will be continuously transferred to Lenzburg. The research on wide bandgap materials is to demonstrate the potential of new materials.Christoph Holtmann: Which applications benefit from ABB’s current and next gen-eration semiconductors?Jan-Henning Fabian: You can find ABB’s high-power semiconductors in industrial motor drives, in trams, regional and high-speed trains, in marine drives, in gas com-pressors or in rectifiers of large aluminum smelters, just to name a few.ABB’s today’s and also future high-power semiconductor generations are funda-mental for the grid integration of renewable energy sources, eg the connection of off-shore wind farms and the transmission of power over long distances (high volt-age DC transmission, HVDC). ABB’s high-power semiconductors are key in future smart grids with flexible AC transmission systems (FACTS) and HVDC solutions. An-other possible future application is the power electronic traction transformer. Thanks to ABB’s high-power semiconductors such traction transformers become smaller in size and less in weight. DC power distribution systems are a further field of applica-tions where ABB’s next generation power semiconductors will play a major role.

Dr. Jan-Henning Fabian, Departement Manager Power Electronics, ABB Corporate Research, Switzerland.

Interview with Dr. Jan-Henning FabianNew high-power semiconductors research lab for WBG materials

2

ABB is a leader in power and au-tomation technologies that enable utility and industry customers to improve their performance while lowering environmental impact. ABB’s technology leadership is built on innovation. ABB has not only pioneered many of today’s power and automation technologies, but maintains a technology advantage in these areas through sustained investment in research and devel-opment. ABB spends more than $1.3 billion annually in R&D.

Innovation is key for ABB to keep its technology leadership also in high-power semiconductors. There is intensive research and develop-ment activity worldwide on wide bandgap (WBG) materials for next generation power semiconductors. Silicon carbide (SiC) in particular is regarded as the main WBG mate-rial for higher power applications in future systems. ABB’s recent investment of $20 million in a new power semiconductors research lab in Dättwil is therefore the subject of this newsletter’s cover story. Dr. Jan-Henning Fabian, manager of the Power Electronics department of the ABB Corporate Research Center in Switzerland talks on what is planned there. Read his interview on page 2. Following the subject, Dr. Munaf Rahimo, Corporate Ex-ecutive Engineer at ABB, focuses on silicon carbide in the Technology in Focus, Application in Focus and Product in Focus articles on pages 4, 5 and 6, respectively.As usual, this newsletter issue also provides the latest product infor-mation (products in the pipeline, new qualified products, phased out and obsolete products), lead time updates and the publications calendar.

Power and productivity for a better world!

Yours, Christoph HoltmannCommunications

Editorial

ABB news 3 l 13

ABB news 10|10

4,500 V IGCT diodes:– Tvj up to 140 °C– Very soft switching– Suitable for HPT-IGCTs

3,300 V HiPak2– New improved HiPak package, the 3,300 V 1,500 A HiPak2 is the first product in the improved package. Shipments to start in November 2013– Epoxy-less design, complies with Fire&Smoke traction standards– Increased case temperature rating of 150°C– 4x higher bond-wire power cycling performance– Bonded internal auxilliary connection replace solder joints– Overall improved reliability and quality

4,500 V dual diode:– 1,200 A dual diode– Suitable as companion diode for 5SNA 1200G450300 in 3 level or chopper topologies

4,500 V StakPak:– 2,000 A press-pack IGBT module– Suitable for series connection in very high power applications such as HVDC and FACTS

Product features

Products in the pipeline BiMOS and bipolar

5,500 V Diode:– Alloyed technology with excellent surge current ratings– Operating temperature from -40 °C up to 190 °C

– Reduced clamping force requirements due to smaller diode diameter– Target market: industry and traction

3

Part Nr. Voltage Current Configuration Housing Samples

5STF 28H2060 2,000 V 2,667 A fast switching

thyristor

H housing contact factory

5SDD 55L5500 5,000 V 5,370 A rectifier diode L housing contact factory

5SDD 55M5500 5,500 V 4,850 A rectifier diode M housing contact factory

Product features

New qualified products BiMOS and bipolar

Part Nr. Voltage Current Configuration Housing

5SNA 1500E330305 3,300 V 1,500 A single IGBT HiPak2

5SDF 20L4520 4,500 V 2,010 A fast recovery L

5SDF 28L4520 4,500 V 2,750 A fast recovery L

5SLD 1200J450350 4,500 V 1,200 A dual diode HiPak1

5SNA 1300K450300 4,500 V 1,300 A StakPak K

5SNA 2000K450300 4,500 V 2,000 A StakPak K

ABB news 3 l 13

The table below shows our approximate current lead times. In general the lead times are more or less the same as reported in June. The only changes are slightly improved lead times for welding diodes and slightly longer lead times for GTOs and StakPak modules.For exact lead time information please contact your ABB Semiconductors sales contact or our local distributor. The detailed Lead Time Indicator was sent to our official distributors last week.

− PCTs 5 – 9 weeks * − Diodes 6 – 10 weeks * − Welding Diodes 5 – 6 weeks * − IGCTs 5 – 6 weeks * − GTOs 5 – 11 weeks * − HiPaks 2 – 4 weeks* − StakPaks 10 – 12 weeks* − IGBT & Diode Dies 2 – 10 weeks*

*) The lead times above are estimates and are not guaranteed. For exact lead times, please contact your ABB Semi-conductors sales contact or our local distributor.

Phased-out productsBiMOS and bipolar

Obsolete productsBiMOS and bipolar

Material Last Deliveries

5SLX 12L2515 Nov. 2013

5SMX 12L2516 Nov. 2013

Material Replaced by

5SMX 76E1264 5SMX 76E1280

5SMX 86E1264 5SMX 86E1280

5SMX 86E1274 5SMX 86E1280

5SMY 12M6500 5SMY 12M6501

5SMY 12N4500 5SMY 12N4501

5SNA 1500E330300 5SNA 1500E330305

5SNG 0250P330300 5SNG 0250P330305

5SHX 26L4510 5SHX 26L4520

5SHX 19L6010 5SHX 19L6020

5SHY 35L4510 5SHY 35L4520

5SHY 35L4512 5SHY 35L4522

Lead time indicator

ABB news 10|10

Product in focus SiC power devices

The development efforts for realising viable solutions for silicon carbide (SiC) power device concepts has been con-tinuously confronted by many technical challenges ranging from starting mate-rial qualities, process capabilities and device operational issues. Nevertheless, the late 1990s witnessed the commer-cialization of the first SiC based power diodes rated at 600 volts from more than one manufacturer. Today, the diode platform has evolved into the third gen-eration and is being extended to 1,700 V diodes, with a potential roadmap to-wards higher voltages in the coming de-cade. Despite the current higher costs associated with SiC power devices, the market share of these diodes has increased tremendously in many appli-cations seeking lower losses and higher operating frequencies. On the other hand, SiC power switches are also be-ing developed based on concepts such as power MOSFETs, JFETs and bipolar transistors. The first commercial MOS-FETs rated below 1,700 V are available today albeit in limited quantities and high prices and are envisioned to gain prominence in many applications over

the next ten years. Improvements in the commercially suitable starting material quality have resulted in the increase of SiC wafer sizes from 2 inch to the current 4 inch standard. Furthermore, 6 inch wafer size capability has been developed and is currently available from one manufacturer. Such develop-ments are crucial for the reduction of the component costs for allowing further exploitation of the SiC power devices in future systems. This trend points in the direction of further market penetration and commercial realization of SiC power devices in the coming years especially in the low to medium voltage range from 600 V up to 1,700 V and potentially beyond.ABB is – at this time – not commer-cially offering SiC power semiconductor devices but is very active in R&D in that field. Hybrid prototype devices in HiPak packages (SiC diodes, Si IGBTs) as well as full SiC power devices in specifically optimized packages (picture) are re-searched.

Process change notifications

4

PCN Nr. Part Nr. Subject Deadline for acceptance

IGCT 13-02 IGCTs Change of test equipment August 2013

GTO 13-01 GTOs Change of test equipment August 2013

FRD 13-01 Fast recovery diodes Change of test equipment August 2013

IGBT 13-05 All HiPak modules Additional supplier qualification August 2013

ABB news 3 l 13

Budaker Ltd. was established in 1991 in Budapest, Hungary, as a family owned enterprise. The company promptly became a reliable supplier of power semiconductors, communication elec-tronics and electro-technics for public transportation companies. Today, we serve the Hungarian market with 9 employees. The company’s turnover in 2012 was €1.1 million. The list of our satisfied customers include Budapest Public Transportation Co., MÁV Hungar-ian Railways and BKV Railway Vehicle Repair and Service Ltd., to name just a few. Customer satisfaction is constantly monitored according to the ISO 9001 standard to which Budaker has been registered.

In the field of power components, specifically for the traction market, we provide thyristors, diodes, GTOs and IGBTs from ABB, Infineon and IXYS. Since 2011 we supply diodes for the re-furbishing of V43 locomotives. In 2013 we began to work in close partnership with ABB and Tunkr s.r.o to provide complete solutions for the moderniza-tions of the TW600 tram chopper and drive unit. Further, Budaker is a distributor for Es-terline Souriau for the Eastern European market, providing complete connection solutions where high performance – high reliability in severe environments is crucial.

Due to the growing demand of modern-ization in the area of public transporta-tion our main focus is to provide high quality service and technical support.

Portrait:ABB Distributor

Budaker Ltd.

1,200 V, 100 A full SiC module with MOSFETs and diodes developed and manufactured at ABB Corporate Research.

ABB news 10|10

Application in focusSiC applications

While further innovations in silicon based power semiconductors are con-tinuously pushing the boundaries of performance, certain application re-quirements, eg very high temperature operation (> 200 °C), very high switch-ing frequency (> 10 kilohertz), and/or high voltages (> 10 kilovolts), might prove to be more suitable for emerging wide bandgap (WBG) power semicon-ductors, especially silicon carbide (SiC) in the higher power range. Most of the SiC technology develop-ments were focused in the past either at voltages around 600 to 1,200 volts for very high frequency operation or at very high voltages above 10 kilovolts for grid applications. At low voltage levels, a certain performance/cost level could be difficult to reach for silicon carbide technology where the competition is fierce from special silicon concepts such as super junction MOSFETs and up-coming gallium nitride (GaN) on silicon (Si) technologies. Therefore, today we observe a development trend towards voltage levels exceeding 1,200 volt where many interesting applications in the high power range can be identified including traction and industrial drives. In parallel, new market developments, in particular in renewable and automo-tive applications, have brought forward the need for higher frequency/tempera-ture devices (eg hybrid electric vehicles

(HEV), photovoltaics (PV), etc.)At such power levels, the first advan-tages from SiC devices are offered with hybrid structures combining optimised and fast silicon IGBTs with silicon car-bide diodes with the ability to operate at higher frequencies up to 20 – 30 kilohertz and higher temperatures up to 175 °C – 200 °C. The next commercial development will provide a full silicon carbide solution with a switch and diode combination with even higher frequency and temperature capabilities albeit coupled with developments in the pack-aging technologies, component cooling and high frequency system platforms. The market and technologies are be-ing also helped with the growing trends towards renewable energy conversion, electrification of automotive applications and higher efficiency and control of energy usage. New converter topologies to meet such trends are in the develop-ment phase with higher demands for lower voltage based components hav-ing higher frequency and temperature operational ranges. The current and near future silicon carbide solutions fit perfectly into these applications while matching all the performance require-ments demanded by the next generation systems.

5

ABB news 3 l 13

ABB Semiconduc-tors International Sales Meeting 2013

From September 17 – 19, ABB Semiconductors conducted its biannual International Sales Meeting 2013. This year the meeting was held in Prague, Czech Republic, and attended by 36 distributors representing 21 countries from 4 continents. Sales and product strategies as well as current business and future market developments were discussed.

The International ABB Sales Meeting, however, was not only about business & strategy, markets & future, but also about meeting friends from around the world and spending quality time together. One of the meeting highlights was the awards ceremony, acknowledging two of our worldwide distributors for their outstanding 20 years of continuous dedication and commitment as our valued distributor in the assigned territory: Milim Syscon Co., Ltd. from Korea and Industrade Co., Ltd. from Taiwan.

Photovoltaic power plant.

Technology in focusWBG materials for power semiconductors

Publications calendar

6

Note We reserve all rights in this document and in thesubject matter and illustrations contained therein.Any reproduction, disclosure to third parties orutilization of its contents – in whole or in parts – isforbidden without prior written consent of ABB AG.Copyright© 2013 ABBAll rights reserved

For more information please contact:

ABB Switzerland Ltd.SemiconductorsFabrikstrasse 35600 Lenzburg, SwitzerlandPhone: +41 58 586 1419Fax: +41 58 586 1306E-Mail: abbsem@ch.abb.com

www.abb.com/semiconductorsm.abb.com

− E&E Faszination Elektronik, May 2013 “100 Jahre ABB Leistungselektronik”

− Bodo’s Power Systems, May 2013 “From mercury-arc to hybrid breaker”, 1st part

− ABB Review, June 2013 “From mercury-arc to hybrid breaker”

− Bodo’s Power Systems, July 2013 “From mercury-arc to hybrid breaker”, 2nd part

− Bodo’s Power Systems, September 2013

“ABB IGCTs: Benchmark perfomance with developments on many fronts”

− Power Electronic Europe, September 2013

“Improved HiPak modules from ABB for power electronic applications”

Over the past four decades, silicon based power semiconductors have established themselves as the devices of choice in the vast majority of power electronics applications. The dominant role of silicon power devices was mainly helped by the tremendous advance-ments over the years due to the im-provement in material growth and prep-aration techniques, process fabrication methods and optimised device design concepts. In parallel to the development of silicon power devices, components based on wide bandgap (WBG) materi-als such as silicon carbide (SiC) and gal-lium nitride (GaN) are continuously being investigated and developed for power electronics systems due to the substan-tial advantages their inherent material properties could potentially realise.

Silicon carbide in particular is regarded as the main WBG material for higher power applications due to its vertical design which enables higher current ratings. Hence, in the past 20 years, silicon carbide based power devices have experienced extensive research and development efforts with regards to advancements in the starting material quality and realization of device process and design concepts which in principle, are not too different from their well-es-

tablished silicon counterparts. However, silicon carbide as a wide bandgap semi-conductor exhibits higher bandgap en-ergy (3.03 eV) when compared to silicon (1.12 eV) which enables the devices to have very high electric field strengths for achieving higher breakdown voltages in thinner devices and lower leakage cur-rents when compared to silicon. These two features would result in substantial reductions in the static and dynamic losses and hence the opportunity to operate at higher power densities for a wider range of operating frequencies and temperatures. A wide range of de-vice concepts based on epitaxial growth for the required thin base regions have been investigated. These include unipo-lar devices such as the Schottky diode, the JFET and the MOSFET, and bipolar device concepts including the bipolar diode, the bipolar transistor, IGBTs and thyristor based structures. Development prototypes were manufactured with volt-age ratings ranging from few hundreds of volts up to 20 kilovolts. However, the first products released were rated below 1,200 V and a few tens of amperes.

(a) 4 inch 1,700 volt SiC Junction Barrier Schottky diodes wafer (5x5 mm2 chips), (b) 4 inch 4,500

volt SiC pin-diode (2.5x2.5 mm2 chips) wafer. Both developed at ABB Corporate Research.

(a) (b)