Nanoelectronics

Aim:

Nanoelectronics is the next transition in the device and integrated circuit technologies which are necessitated due to the need for several 10s to 100s of THz device requirements for various demands for speeds and drastic reduction of power requirements.

Expected Outcome/ Objectives:

Is to introduce students to the complexities of the emerging technologies and introduce them to the issues related to the operation of such devices and understand the functionality of such devices. This will enable the students to take up their jobs in R & D and new process technologies.

Introduction to Nanoelectronics (2)

Limitations of the conventional MOSFETs at Nanoscales, introductory concepts of Ballistic transport and Quantum confinement, Differences in Few Electron Devices (as analog version) and Single Electron Devices (as digital version) of Nanoelectronic devices.

Current Nanoelectronic Devices. (8)

Conventional MOS-FET, Gate Leakage due to Gate oxide, High K dielectrics and improvements in performance. Scaling effect, Quantum Effects in MOSFETs, Strained Silicon, Fully Depleted SOI, MOSFET, Double Gate MOSFET, Multi-gate MOSFETs, FIN-FET, Electrically Induced Junctions for EJ-MOSFETs, Ballistic Transport, Conductance Quantization, Quantum Point Contact Devices, New inter-connect strategies.

Nanostructures and Quantum Devices: (4)

Low-dimensional structures: Quantum wells, Quantum wires, and Quantum dots; Density of states in low-dimensional structures; Resonant tunneling phenomena and applications in diodes and transistors

Introduction to Single Electronics (8)

Principle of the Single-Electron Transistor- The Coulomb Blockade Phenomenon, Theoretical Quantum Dot Transistor; - Energy of Quantum Dot system, Single-Electron Quantum-Dot Transistor, Single-Hole Quantum-Dot Transistor, Single-Electron Transistor, Coulomb Blockade Devices, Conductance Oscillation and Potential Fluctuation, Transport under Finite temperature and Finite Bias, Single-Electron Effect, Modeling of Transport: Tunneling- Quantum kinetic Equation, Carrier Statistics and Charge Fluctuations.

Quantum electronics: (6)

Upcoming Electronic Devices (QED), Electrons in Mesoscopic structures, Examples of Quantum Electronic Devices: Quantum Interference Devices, SQUIDs, Split Gate Transistor, Electron Wave Transistor, Electron Spin Transistor, , Resonant Tunnelling Devices, Quantum Oscillators, Quantum Cellular Automata (QCA), Quantum dot Array, Introduction Quantum Computing.

Carbon Nantubes and CNT Based devices (10)

Carbon Nanotube theory: structure and phonon dispersion relations, nomenclature, acoustic and optical phonons, Nanotube theory: electronic structure, optical properties. Electronic structure of graphene, SW and MWCNTs, 1D quantization in nanotubes, van Hove singularities, CNT-FET, CNT-TUBFET, CNT-SET, CNT memories, CNT based switches, Logic Gates, CNT based RF devices, CNT based RTDs,

Molecular Electronics: (8)

Overview, Characterization of switches and complex molecular devices, polyphenylene based Molecular rectifying diode switches. Polymer Electronics, Self-Assembling Circuits, Optical Molecular Memories Technologies, Quantum Mechanical Tunnel Devices, Quantum Dots & Quantum wires

Spintronics: (2)

Introduction to Spintronics. Principles and concepts, Spintronic devices and applications, spin filters, spin diodes, spin transistors.

Text Books:

1. Silicon Nanoelectronics By Shunri Oda, David Ferry, CRC Press, Taylor & Francis Group, 2006.

2. C.N.R. Rao and A. Govindaraj Nanotubes and nanowires, RSC Publishing, 2005.

3. Nanoelectronics and Nanosystems By K. Goser, P. Glosekotter, Springer, 2005.

4. Karl Goser, Peter Glosekotter, Jan Dienstuhl , Nanoelectronics and Nanosystems- From Transistors to Molecular and Quantum Devices, Springer-Verlag 2004

5. M. Ziese and M. J. Thornton (Eds.), Spin Electronics, Springer-Verlag 2001

6. From Atom to Transistor-Supriyo Datta

Reference Paper:

1. Single Electron Devices and their Applications, Konstantin K. Likharev, PROCEEDINGS OF THE IEEE, VOL. 87, NO. 4, APRIL 1999.p 606- 632.