N RCHIVE INFORMATION - NXP...

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ARCHIVE INFORMATION ARCHIVE INFORMATION Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. 26.5 dBm P1dB @ 2450 MHz Power Gain: 27.5 dB Typ (@ f = 2450 MHz, Class AB) High Gain, High Efficiency and High Linearity EVM = 3% Typ @ P out = +19 dBM, 14% PAE RoHS Compliant In Tape and Reel. R2 Suffix = 1,500 Units per 12 mm, 7 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Collector Supply V CC 5 V Base Supply First Stage V B1 5 V Base Supply Second Stage V B2 5 V Detector Bias Supply V BIAS 5 V DC Current I DC 171 mA Table 2. Thermal Characteristics Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R θJC 185 (1) °C/W Case Operating Temperature Range T C --40 to +85 °C Storage Temperature Range T stg --55 to +150 °C Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) II (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD 22--A113, IPC/JEDEC J--STD--020 1 260 °C 1. Simulated. Document Number: MMG2401 Rev. 3, 5/2006 Freescale Semiconductor Technical Data 2400--2500 MHz, 27.5 dB, 26.5 dBm 802.11g WLAN POWER AMPLIFIER InGaP HBT MMG2401NR2 CASE 1483--01 QFN 3x3 © Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.

Transcript of N RCHIVE INFORMATION - NXP...

ARCHIVEINFORMATION

ARCHIVEINFORMATION

MMG2401NR2

1RF Device DataFreescale Semiconductor

Indium Gallium Phosphorus HBTWLAN Power AmplifierDesigned for 802.11g and dual mode applications with frequencies from

2400 to 2500 MHz.

• 26.5 dBm P1dB @ 2450 MHz

• Power Gain: 27.5 dB Typ (@ f = 2450 MHz, Class AB)

• High Gain, High Efficiency and High Linearity• EVM = 3% Typ @ Pout = +19 dBM, 14% PAE• RoHS Compliant• In Tape and Reel. R2 Suffix = 1,500 Units per 12 mm, 7 inch Reel.

Table 1. Maximum Ratings

Rating Symbol Value Unit

Collector Supply VCC 5 V

Base Supply First Stage VB1 5 V

Base Supply Second Stage VB2 5 V

Detector Bias Supply VBIAS 5 V

DC Current IDC 171 mA

Table 2. Thermal Characteristics

Characteristic Symbol Value Unit

Thermal Resistance, Junction to Case RθJC 185 (1) °C/W

Case Operating Temperature Range TC -- 40 to +85 °C

Storage Temperature Range Tstg -- 55 to +150 °C

Table 3. ESD Protection Characteristics

Test Methodology Class

Human Body Model (per JESD22--A114) 2 (Minimum)

Machine Model (per EIA/JESD22--A115) A (Minimum)

Charge Device Model (per JESD22--C101) II (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology Rating Package Peak Temperature Unit

Per JESD 22--A113, IPC/JEDEC J--STD--020 1 260 °C

1. Simulated.

Document Number: MMG2401Rev. 3, 5/2006

Freescale SemiconductorTechnical Data

2400--2500 MHz, 27.5 dB, 26.5 dBm802.11g WLAN POWER AMPLIFIER

InGaP HBT

MMG2401NR2

CASE 1483--01QFN 3x3

© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.

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2RF Device Data

Freescale Semiconductor

MMG2401NR2

Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted.) VCC = 3.3 Vdc, VBIAS = 3 Vdc, ICQ = 83 mA, f = 2450 MHz

Characteristic Symbol Min Typ Max Unit

Output Power at 1dB Compression P1dB 24 26.5 � dBm

Power Gain(Pout = 19 dBm)

Gp 26 27.5 29 dB

Error Vector Magnitude(Pout = 19 dBm, 64 QAM/54 Mbps)

EVM � 3 � %

Total Current(Pout = 19 dBm)

ICtotal � 210 � mA

Quiescent Current IDCQ � 156 � mA

Bias Control Reference Current(ICQ = 66 mA)

Iref � 8.4 � mA

Gain Flatness(Over 100 MHz)

GF � ±0.2 � dB

Gain Variation over Temperature(--40 to 85°C)

� � ±1 � dB

Input Return Loss IRL � --10 --7.5 dB

Reverse Isolation � � --35 � dB

Second Harmonic(Pout = 19 dBm)

� � --45 � dBc

Third Harmonic(Pout = 19 dBm)

� � --35 � dBc

Ramp--On Time (10--90%) tON � 100 � ns

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MMG2401NR2

3RF Device DataFreescale Semiconductor

Table 6. Functional Pin Description

Name PinNumber

Description

VB1 1 Base power supply for first stage amplifier.

RFIN 2, 3 RF input for the power amplifier. This pin is DC--shorted toGND and AC--coupled to the transistor base of the firststage.

VBIAS 4 Detector bias voltage supply.

VREF 5 Detector output voltage reference. Vout -- VREF is useful fortracking detector performance over temperature.

VOUT 6 Detector output voltage.

VCC2 7 Collector power supply for second stage amplifier.

RFOUT 8, 9 RF output for the power amplifier. This pin is DC--coupledand requires a DC--blocking series capacitor.

VB2 10 Base power supply for second stage amplifier.

NC 11 Not connected.

VCC1 12 Collector power supply for first stage amplifier.

GND BacksideCenterMetal

The center metal base of the QFN 3x3 package providesboth DC and RF ground as well as heat sink contact for thepower amplifier.

Figure 1. Pin Connections

9

8

7

6

(Top View)

VOUT

RFIN

RFIN

1

2

3

54

101112VB2

VREF

VB1

NCVCC1

RFOUTRFOUTVCC2

VBIAS

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4RF Device Data

Freescale Semiconductor

MMG2401NR2

Figure 2. MMG2401NR2 Test Circuit Schematic

Z1, Z2 0.10″ x 0.5395″ MicrostripPCB Getek ML200M, 0.005″, εr = 3.8

C11 C1 C2 C3 C4 C5 C12 C10 C9 C8 C7 C6

L1

VCC2VCC1VB1

Z1

RFINPUT

RFOUTPUT

C14 C15 C13

VBIAS VREFVOUT

Z2

VB2

Table 7. MMG2401NR2 Test Circuit Component Designations and ValuesPart Description Part Number Manufacturer

C1, C6 1 μF Chip Capacitor 12065A105JAT2A AVX

C2, C7 0.1 μF Chip Capacitor 12065A104JAT2A AVX

C3, C8 0.01 μF Chip Capacitor 12065A103JAT2A AVX

C4, C9, C11, C12 100 pF Chip Capacitor 08055A101FAT2A AVX

C5, C10, C13, C14, C15 20 pF Chip Capacitor 12065A200CAT2A AVX

L1 7.5 nH Chip Inductor 0402CS--7N5XJBC Coilcraft

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MMG2401NR2

5RF Device DataFreescale Semiconductor

Figure 3. MMG2401NR2 Test Circuit Component Layout

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductorsignature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will haveno impact on form, fit or function of the current product.

VB1

C1

C12

C2

C3

C4

C5

C11

VB2

VCC1

C14C15 C13

C10

C9

C8

C7

C6

VBIAS VREF VOUT

VCC2

L1

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6RF Device Data

Freescale Semiconductor

MMG2401NR2

TYPICAL CHARACTERISTICS

2524

29

0

TC = 25_C

Pout, OUTPUT POWER (dBm)

Figure 4. Power Gain versus Output Power

VCC = 3.3 VdcVB1 = 2.9 Vdcf = 2450 MHz

--40_C

85_C

28

27

26

25

5 10 15 20 250

7

0

Pout, OUTPUT POWER (dBm)

Figure 5. Error Vector Magnitude versusOutput Power

TC = 25_C

VCC = 3.3 VdcVB1 = 2.9 Vdcf = 2450 MHz

--40_C

85_C

EVM,ERRORVECTORMAGNITUDE(%)

6

5

4

3

2

1

5 10 15 20

TC = --40_C

250

25

0

Pout, OUTPUT POWER (dBm)

Figure 6. Efficiency versus Output Power

VCC = 3.3 VdcVB1 = 2.9 Vdcf = 2450 MHz

25_C

85_C

20

15

10

5

5 10 15 20 250.01

10

0

Pout, OUTPUT POWER (dBm)

Figure 7. Detector Output Voltage versusOutput Power

V out,DETECTOROUTPUTVOLTAGE(V)

TC = 85_C

VCC = 3.3 VdcVB1 = 2.9 Vdcf = 2450 MHz

25_C--40_C

1

0.1

5 10 15 20

30--4

4

0

Pout, OUTPUT POWER (dBm)

Figure 8. AM to PM versus Output Power

AMtoPM

(_)

3

2

1

0

--1

--2

--3

5 10 15 20

VCC = 3.3 VdcVB1 = 2.9 Vdcf = 2450 MHz

25 250

250

0

Pout, OUTPUT POWER (dBm)

Figure 9. Total Current versus Output Power

I CC,TOTALCURRENT(mA)

TC = 85_C

VCC = 3.3 VdcVB1 = 2.9 Vdcf = 2450 MHz

25_C

--40_C

200

150

100

50

5 10 15 20

Gp,POWER

GAIN(dB)

η,EFFICIENCY(%)

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MMG2401NR2

7RF Device DataFreescale Semiconductor

TYPICAL CHARACTERISTICS

2.810

35

2

f, FREQUENCY (GHz)

Figure 10. Power Gain (S21) versusFrequency

Gp,

POWER

GAIN(dB)

VCC = 3.3 VdcVB1 = 2.9 Vdc

30

25

20

15

2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8--25

0

2

--5

--10

--15

--20

2.1 2.2 2.3 2.4 2.5 2.6 2.7

f, FREQUENCY (GHz)

Figure 11. Input Return Loss (S11) versusFrequency

INPUTRETURNLOSS

(dB)

IRL,

VCC = 3.3 VdcVB1 = 2.9 Vdc

2.8--70

--20

2

--30

--40

--50

--60

2.1 2.2 2.3 2.4 2.5 2.6 2.7

VCC = 3.3 VdcVB1 = 2.9 Vdc

f, FREQUENCY (GHz)

Figure 12. Reverse TransconductanceIsolation (S12) versus Frequency

REVERSE

TRANSCONDUCTANCEISOLATION(dB)

2.8--25

0

2

--5

--10

--15

--20

2.1 2.2 2.3 2.4 2.5 2.6 2.7

f, FREQUENCY (GHz)

Figure 13. Output Return Loss (S22) versusFrequency

ORL,OUTPUTRETURNLOSS

(dB)

VCC = 3.3 VdcVB1 = 2.9 Vdc

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8RF Device Data

Freescale Semiconductor

MMG2401NR2

EXPOSED PAD

SYMBOLSMIN MAX

1

Figure 14. MMG2401NR2 Specific Mechanical Outline Information

TOP VIEW BOTTOM VIEWSIDE VIEW

0.25 MIN.

0.45

0.25 MIN.

23

1B

A

C

L

4X D

4X D

(Ny--1)eF2F/23

e

(Nx--1)e

PIN1 ID

E/2E

1

N=12

b

SEATINGPLANE

STANDARD

DETAIL �A� -- PIN #1 ID AND TIE BAR MARK OPTION

NOTES:

1. DIMENSION b APPLIES TO PLATED TERMINAL AND ISMEASURED BETWEEN 0.20 AND 0.25 MM FROMTERMINAL TIP.

2. N IS THE NUMBER OF TERMINALS (12).Nx IS THE NUMBER OF TERMINALS IN X--DIRECTIONANDNy IS THE NUMBER OF TERMINALS IN Y--DIRECTION.

3. ALL DIMENSIONS ARE IN MILLIMETERS.

2

2

DIMA

MIN NOM MAX3.00 BSC

B 3.00 BSCC -- 0.85 1.00D 0.24 0.42 0.60EF

0.18 0.23be 0.50 BSC

Ny 3

SEE EXPOSED PAD

Nx

SEE EXPOSED PAD

3

0.30

NOME

1.30MIN NOM MAX

F

1.301.15 1.45 1.15 1.45

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MMG2401NR2

9RF Device DataFreescale Semiconductor

PACKAGE DIMENSIONS

B

3

3

A

2X

0.1 C

C0.1

2X

PIN 1 INDEXAREA

EXPOSED DIEATTACH PAD

10 12

6 4

9

7

1

3

0.10

8X 0.512X

9

DETAIL G

M

M

1.551.25

1.551.25

0.300.18

12X

DETAIL M

DETAIL N

PIN 1 INDEX

0.750.50

C A B

VIEW M -- M

M

NOTES:1. ALL DIMENSIONS ARE IN MILLIMETERS.2. INTERPRET DIMENSIONS AND

TOLERANCES PER ASME Y14.5M, 1994.3. THE COMPLETE JEDEC DESIGNATOR FOR

THIS PACKAGE IS: HF--PQFP--N.4. FOR ANVIL SINGULATED QFN PACKAGES,

MAXIMUM DRAFT ANGLED IS 12 .5. PACKAGE WARPAGE MAX 0.05 MM.6. CORNER CHAMFER MAY NOT BE PRESENT.

DIMENSIONS OF OPTIONAL FEATURES AREFOR REFERENCE ONLY.

7. CORNER LEADS CAN BE USED FORTHERMAL OR GROUND AND ARE TIED TOTHE DIE ATTACH PAD. THESE LEADS ARENOT INCLUDED IN THE LEAD COUNT.

8. COPLANARITY APPLIES TO LEAD, CORNERLEADS, AND DIE ATTACH PAD.

9. THIS DIMENSION APPLIES TO PLATEDTERMINAL AND IS MEASURED BETWEEN0.20 MM AND 0.25 MM FROM TERMINAL TIP.

_

CASE 1483--01ISSUE AQFN 3x3 Page 1 of 3

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10RF Device Data

Freescale Semiconductor

MMG2401NR2

6

DETAIL NPREFERRED CORNER CONFIGURATION

6

DETAIL NCORNER CONFIGURATION

_(45 )

(0.25) (0.25)

0.600.24

0.600.24

CASE 1483--01ISSUE AQFN 3x3

8

DETAIL GVIEW ROTATED 90 CW

1.00.8

_

1.000.75

0.050.00 SEATING

PLANEC

0.1

0.05

C

C

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MMG2401NR2

11RF Device DataFreescale Semiconductor

CASE 1483--01ISSUE AQFN 3x3

_(45 )

DETAIL MPREFERRED BACKSIDE PIN 1 INDEX

0.650.30

TIE BAR MARK OPTION7

PIN 1 ID

4X 0.230.13

4X

(0.35)

DETAIL M

BACKSIDE PIN 1 INDEX OPTION

DETAIL S

DETAIL M

BACKSIDE PIN 1 INDEX OPTION

(0.45)

PIN 1 IDR0.2

DETAIL SBACKSIDE PIN 1 INDEX

0.2170.137

(0.25)

0.2170.137

(0.1)

(0.25)

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12RF Device Data

Freescale Semiconductor

MMG2401NR2

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Document Number: MMG2401Rev. 3, 5/2006