Market & Technology trends in Wide BandGap power packaging

APEC 2015

Overall Power Electronic Market

2

3

Bipo

lar

Unip

olar

Fiel

d Ef

fect

Tra

nsist

ors

DiodeGTO

Thyristor

BJT

IGCT

1970 1990 2010 2020

IGBT

SiC BJT

SJMOSFET

SiliconSiC

GaN

Gen. 2Max. 600V

Gen. 6Max. 6500V…

SiC JFET

GaN HEMT

MOSFETFET

T Gen

IGCTTOO

SSSSSSSSSSSSSSSSSSi

MO

2013

S

970 11119110Thyristor & MOSFET era

990 222201

G

99Si IGBT era

10 222222222202

aN HEMT

20131

GWBG era??

SiC MOSFETSiC diodeS

Life–Cycle of Power Device TechnologiesA new generation every ~20 years…

4GaN vs. SiC vs. Si

• SiC will stay the preferred choice for high T° application

• GaN could possibly reach high-voltage values but thus will require bulk-GaN as the substrate.

• Silicon cannot compete at the high-frequency range

Figure-of-merit

2 Tc for GaN is given here for typical GaN-on-Si. It has been demonstrated that Tc of bulk GaN could reach 4 W/cm.°C

1 Electric field profile can also be controlled by the doping concentration

High T°applications

High Frequency switching

High voltageoperation

2

1

5How SiC & GaN will capture market shares over incumbent silicon technologies

• IGBT is gaining shares in high voltage low-end solutions and low voltage high-end solutions, due to its price erosion. It is becoming a commodity. On the other side, SiC is to become the high-end solution in medium and high voltage. It is still uncertain where to position GaN on this graph.

1200V or more600V or less

Prod

uct r

ange

Voltage

IGBTThyristor

IGCT…

SiC

MOSFET

Triacs

Bipolar…

3.3kV and more200V

GaN GaN

6Power Electronics2013 – 2020 value chain analysis: wafer, device, system

7Power Electronics market metrics2006 – 2020 overall Power Electronics market size, split by family

It includes:

• Power discretes: MOSFET, rectifier, IGBT, Bipolar….

• Power modules: IGBT, diode or MOSFET modules, IPM

• Power IC: power management IC: mainly voltage regulators (POL) and drivers

Power Module Market Revenue, Split by Applications8

2010 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020Electric/Hybrid bus $5M $11M $15M $19M $22M $25M $26M $28M $30M $31M $33MMotors $475M $509M $491M $521M $567M $606M $653M $706M $759M $813M $867MUPS $228M $235M $225M $238M $247M $276M $289M $318M $348M $388M $432MRail $194M $198M $190M $205M $210M $215M $220M $231M $244M $256M $269MWind $85M $93M $107M $90M $98M $102M $107M $112M $117M $125M $137MEV/HEV $179M $249M $376M $516M $608M $706M $823M $1 029M $1 307M $1 689M $2 259MPV $274M $406M $468M $621M $732M $843M $956M $1 047M $1 250M $1 379M $1 553M

-

1 000

2 000

3 000

4 000

5 000

6 000

in M

$Power modules market, split by application

WBG Possible applications in silicon power electronics9

WBG can displace Silicon in:

IT & Consumer Automotive Industry

PFC / Power supplies

Converter / Inverter

DC/DCConverter

DC/ACInverter Inverter

Electronic appliances& Computing UPS Hybrid automotive Motor controlP.V. Wind turbines

< 500 W 1 – 5 kW 30 – 350 kW 5 – 100kW5 – 50kW > 1MW

SiC & GaN possible applications SiC only

UPS

100kW1MW

Rail transport.

Power distribution

10Power Range of the Targeted Applications

2010 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020GaN modules - - - - $2M $14M $19M $35M $53M $78M $112MSiC modules $10M $18M $41M $61M $96M $150M $223M $302M $463M $598M $782MOthers (thyristors,…) $9M $9M $11M $14M $19M $22M $26M $30M $34M $38M $43MFET modules $154M $201M $206M $235M $259M $285M $309M $345M $384M $434M $489MIGBT modules $1 079M$1 289M$1 450M$1 738M$1 954M$2 146M$2 350M$2 618M$2 986M$3 408M$4 012M

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1 000

2 000

3 000

4 000

5 000

6 000

in M

$Power modules market, split by technology

Wide BandGap(WBG): a path to CO2reduction…

11

12Wide BandGap devices - SiC Device Application Time To Market

• SiC diodes today are already in production, mainly coupled with IGBT technology.

• Penetration of SiC in Wind turbines will happen later than expected. For all other segments, Yole Développement roadmaps have been confirmed. Use of SiC in industrial motor drives is still unclear.

2013 2014 2015 2016 2017 2018 2019

Industrial motor drives

UPS

Rail traction

Wind turbines

EV/HEV

PV inverters

Confirmed

Confirmed

Confirmed

Today

Diode Switch

13Wide BandGap devices – GaN Device Application Time To Market Diode Switch

Bill of Material (BoM) hypothesis14

• 60kW inverter

• Imax=180A. DC link=400V

• 3-leg Inverter: 12 diode chips + 12 transistor chips. Each are 650V/100Amp

Proposed AC drive topology including 400V DC bus and DC-AC 3-leg inverter. Transformer-less

• Hypothesis and inputs:

– Only power conversion parts and transformer are considered. Fuse, interface, screen, logic, buttons, memories,

multimedia, final housing are not analyzed here

– BoM is calculated as if an integrator is buying components off-the-shelf at market price

– All component prices, expect power devices, are eroding -3%/year

– Power device (Diode, transistors) market price is given in the reference table

– System + Reverse Engineering and Reverse Costing Estimation for commercial inverter

400V

Yole Développement Copyrights 2014 - Future trends in the compound semiconductor

15GaN BoM comparison: Si vs. GaN vs. SiCexample: HEV 60 kW inverter

Power packaging innovations:

Key developments for large WBG devicesadoption

16

Ke

Needs on power packaging development

• Even if wide bang gap semiconductors comes to a sufficient TRL level. Power packaging might be the bottleneck for wide adoption

• It is important to notice that market shares are not directly linked to when will the component be available but rather when will integrators be able to get benefits from these component is their systems

• Designing a totally new product with these new semiconductors will induced R&D expenses that has to be compensated by the added value at the system level (cost, size, operating condition, etc..) compare to regular Silicon solutions.

• To grab this added value, an integrator has to get full benefits from wide band gap devices with:• An increased operating frequency

• An increased operating temperature

• Latest developments in power packaging that enable low stray inductance package and reliability at high temperature fully impact future trends in the compound semiconductor

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Power module packaging evolution

• Power module with baseplate is the standard design (70 to 80% of available power modules). DBC (Direct Bond Copper) packaging is the most widespread packaging. These modules are complex and expensive.

• Common failure in a power module is caused by thermal cycling. Mismatching CTE (coefficient of thermal expansion) can make layers detach from one another. Some gel filling also cannot handle high temperatures

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The main stakes of SiC & GaN Power Modules Packaging

HeatsinkThermal grease

Substrate

SBD IGBT

Baseplate

DBC

Busbar connection

Solder

Copper metallization

Plastic case

Die attach

Interconnection

Gel filling

Substrate attach

In red: Common failure locations

Power module packaging evolution19

Breakthrough and innovation

Die interconnection

DBC +

baseplateDie attach

Infineon .XT Lexus/Toyota modules:LS 600h

Prius 2010

Semikron Ag sintering

Semikron Skin

Di h

• GE power overlay• Delphi Viper• aPSI3D module

0111000

All applicable to Si, SiC and GaN

Includes coolingDanfoss

Shower power

duleaPSI mod

Improvements in packaging can be made in 3 different aspects:

• Die interconnection, which is searching for innovative wire bonding or no-wires connection for better lifetime and reliability

• Die attach, which uses new materials for better lifetime

• DBC+baseplate, which uses new materials and suppress layers for improved cooling and smaller size

20Power module packaging evolutionCompetitor packaging technology - Trends in Power Module Packaging

Standard solutionsWidely used by all players

Alternative technosAt mass production and growing in market share

Potential breakthroughSmall series and R&D stage

Sn alloy

Cu/Sn Eutectic soldering

Al wire bonding

Al ribbon bonding

Copper wire bonding

Alloys soldering

Nano/Micro powder and film sintering

Ball bonding

Semikron skin

Micro powder Silver sintering

Materials: • Cu & AlCeramics:• Al2O3 & AlNProcesses:• Direct bonding & Brazing

Si3N4 ceramic

DBCA

New materialsCopper

INVAR®

Cu

AlCeramics

Al alloy

21Power module packaging evolutionCompetitor packaging technology - Trends in Power Module Packaging

Standard solutionsWidely used by all players

Alternative technosAt mass production and growing in market share

Potential breakthroughSmall series and R&D stage

Thermal greasesThermal gelsElastomers…

Phase Change Materials

Infineon®

Chip on heatsink

Ceramic heatsink

Die

Silicone gelSilicone

PolyurethaneAcrylicEpoxy

…Parylene for high temperature apps

Ceramic heatsink (AlN or Al2O3)

Source: CeramTec

Baseplate + heatsinkAlSiC for long lifetime

Al2O3 for cost

Thermal exchange improvements:

Danfoss ShowerpowerDouble side coolingDBC to heatsink (no baseplate)Pin-fin baseplate

Micro-channel cooling

22Power module packaging evolutionCompetitor packaging technology - Trends in Power Module Packaging

• Improved cooling• Higher integration• High freq. compatible

Toyota 2010• Standard packaging• Ribbon bonding• Direct substrate cooling

Mitsubishi 2010 • Epoxy packaging• Cu lead bonding• Direct substrate cooling

Delphi 2010• Single IGBT/diode packaging• Flip-chip soldering• Direct substrate cooling

Denso 2008/Lexus LS• Single IGBT/diode packaging• Flip-chip soldering• Double side cooling• Too expensive

3.0 mm

Bosch 2013• Molded package• Die on Leadframe• Thick Copper layer for thermal

spreading• Direct substrate cooling

Mitsubishi 2014• Six Pack IGBT/Diode Package• Cooling fin• Thick Copper layer for thermal

spreading• Direct substrate cooling

Conclusion

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Yole Développement Copyrights 2014 - Future trends in the compound semiconductor

• GaN and SiC are coming soon even if a bit later than expected but prospects are promising: There is room for each of the substrates (high voltage applications for SiC, low and medium voltage for GaN)

• These new devices require high performance modules to take all the benefit from their performance

• Power packaging is now a key field of investigation for improvement

• Continuous improvements are seen on all parts of modules: Die attach, interconnections, substrate, TIMs, etc…

• New power packaging solutions are proposed by module makers

24Conclusion