Lecture G2 Nanopackaging B - Computer Action Teamweb.cecs.pdx.edu/~jmorris/TKK/Grad/Lecture G2...11...
13
1 Nanopackaging: N t h l i & El t i P k i Nanotechnologies & Electronics Packaging Part B CNTs (1) James E. Morris Department of Electrical & Computer Engineering, Portland State University, Portland, Oregon, USA [email protected] 4/21/2009 1 Carbon Nanotubes (CNTs) General properties Preparation Mechanical Electrical Shielding Solder Interconnects Interconnects Thermal Miscellaneous applications 4/21/2009 2
Transcript of Lecture G2 Nanopackaging B - Computer Action Teamweb.cecs.pdx.edu/~jmorris/TKK/Grad/Lecture G2...11...
1
Nanopackaging: N t h l i & El t i P k iNanotechnologies & Electronics Packaging
Part B CNTs (1)
James E. Morris Department of Electrical & Computer Engineering,p p g g,Portland State University, Portland, Oregon, [email protected]
4/21/2009 1
Carbon Nanotubes (CNTs)General propertiesPreparationMechanicalElectrical
ShieldingSolderInterconnectsInterconnects
ThermalMiscellaneous applications
4/21/2009 2
2
Carbon Nanotubes (CNTs)
Lee et al, ECTC’05 Kyoung‐Sik Moon et al, ECTC’08ECTC 08
Catalyst Support
Catalyst nanoparticleCo
CnHm
Co
CnHm
Heating coil
Substrate with metal transition catalyst
Carbon source Process gas
High T CVD V‐L‐S process: vertical growth, uniform lengthsYadav et al
Arc/laser deposition → random “spaghetti”
4/21/2009 3
CNTs (Kunduru et al *)
4/21/2009 4
3
4/21/2009 5
4/21/2009 6
4
CNT Fabrication (Yadav et al)
VA
CU
UM
Cathode
Anode
Arc chamber
Cathodic deposit
DC
Gas
500 Torr Ar
Graphite target
Water-cooled Cu collector
12000 C furnace
DC power source
Heating coil
Substrate with metal transition catalyst
Carbon source Process gas
Catalyst Support
Catalyst nanoparticleCo
CnHm
Co
CnHm
High T CVD V-L-S process: vertical growth, uniform lengths
Arc/laser deposition → random “spaghetti”
4/21/2009 7
4/21/2009 8
5
4/21/2009 9
4/21/2009 10
6
Nantero CNT S-RAM (Kunduru et al *)Rueckes et al (2000)
4/21/2009 11
4/21/2009 12
7
CNT Properties (Wikipedia)
Young’s Modulus
(Tpa)
Tensile Strength
(Gpa)
Elongation at break
(%)
SWNT ~1 (1-5) 13-53E 16
CNT classifications:
Single wall SWNTMulti‐wall MWNT
ArmchairZigzagSWNT
Armchair 0.94T 126.2T 23.1
Zigzag 0.94T 94.5T 15.6-17.5
Chiral 0.92T
MWNT 0.8-0.9E 150
Stainless steel
~0.2 ~0.65-1.0 15-50
Chiral
MetallicSemiconducting
SWNTs: typ. ⅔ metallic, ⅓ semicondGrow at ~ 900°C
MWNTs: MetallicGrow at ~ 700°C (→365°C)
Kevlar ~0.15 (0.25T) ~3.5 (29.6T) ~2
1 10 100 1000 10000
Bulk Thermal Conductivity (W/mK)
Polymers
Solders
Metals
Diamond
Nanotubes
CTE ~ 0Electrical (Metallic CNT):
Imax CNT > 1000 x Imax Ag/CuµCNT ~ 70 x µSiCNT “ropes” 10‐4 Ω.cm
T Theoretical E Experimental(Mallik)
4/21/2009 13
Mechanical Effects (Yamamoto, Nanotechweb.org)
Acid etch:Aids dispersionIncreased interfacial frictionBetter than smooth CNTs
0.9 vol % acid‐etched CNTs:+27% bending strength+25% fracture toughness4/21/2009 14
8
EMC ShieldingMWCNTs (Cheng et al)
0 030.060.090.120.150.180.210.24
ectr
ical
Con
duct
ivity
(S/c
m)
ADM CNT-LCP Composite
00.03
0 20 40 60Weight Percentage of CNT (%)
Ele CVD CNT-LCP Composite
CNTs in LCP
Shielding Improvement (Ionic Liquid) at low CNT content
(Jin‐Chen Chiu, ECTC’08)
4/21/2009 15
CNT Interconnect (Naaemi, Huang, & Meindl, ECTC 2007)
4/21/2009 16
9
CNT Interconnect (Banerjee, Li, Srivastava NANO 2008)
4/21/2009 17
CNTs in TSVsX t l A l Ph L tt (2007)←Xu et al, Appl Phys Lett (2007)
15nm MWNTs in 35nm viasGraham et al, Diamond & Related materials (2004)
4/21/2009 18
10
3D CNT TSVs (proposal)
4/21/2009 19
3D CNT TSVs (proposal continued)
4/21/2009 20
11
SWCNT Effects on 63Sn-37Pb & Sn-3.8Ag-0.7Cu Solders(Kumar et al)
(a)
CNTs in grain
18
3µm
CNTs
1µm
gboundaries
10
12
14
16
18
0 0.01 0.03 0.05 0.08 0.1 0.3 0.5 0.8 1
Wt% of SWCNTs
Con
duct
ivity
(IA
CS)
Series1 Series2
20
30
40
50
0 0.01 0.03 0.05 0.08 0.1 0.3 0.5 0.8 1Wt% of SWCNTs
%D
uctil
ity
Sn-Pb Sn-Ag-Cu
4/21/2009 21
SWCNT Effects on 63Sn-37Pb & Sn-3.8Ag-0.7Cu Solders
10
15
20
25
30
35
40
0b 0.01b 0.03b 0.05b 0.08b 0.1b 0.3b 0.5b 0.8b 1b
Wt% of SWCNTs
Con
tact
ang
le (d
eg)
(Kumar et al)
20
30
40
50
60
70
0 0.01 0.03 0.05 0.08 0.1 0.3 0.5 0.8 1
wt% of SWCNTs
Ulti
mat
e Te
nsile
Stre
ngth
(MP
a)
Sn-Pb Sn-Ag-Cu
Sn-Pb Sn-Ag-Cu
20
30
40
50
60
0 0.01 0.03 0.05 0.08 0.1 0.3 0.5 0.8 1
wt% of SWCNT
Yie
ld S
treng
th (M
Pa)
g
0
5000
10000
15000
Mod
ulus
(MPa
)
0 0.01 0.05 0.08 0.1 0.3 0.5 0.8 1
Wt% of SWCNTs
Sn-PbSn-Ag-Cu
Sn-Pb Sn-Ag-Cu
0
50
100
150
200
0 0.05 0.1 0.3 0.5 0.8 1Wt% of SWCNTs
Mic
roha
rdne
ss(M
Pa)
Sn-Pb Sn-Ag-Cu
4/21/2009 22
12
Ultimate tensile strength, etc [Kumar/Kripesh/Tay ECTC’06]
4/21/2009 23
Electromigration(Yang Chai et al ECTC’08)
CNTs inhibit void growth4/21/2009 24
13
Open-ended CNTs for electrical interconnect[Zhu, Hess, Wong ECTC’06]
254/21/2009
