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  • F. DielacherMarch_04

    ISSCC-2004: Latest Trends in Technologies and Circuits for Wireless Communications

    18. March 2004

  • F. DielacherMarch_04

    Outline ISSCC-2004 summary of major highlights

    AD/DA-Converters

    Wireless, RF and Technology-Directions

    Digital and Signal-Processing

    ISSCC-2004 (GIRAFE) Gigahertz Radio Front Ends ForumRF Power Amplifiers

    ISSCC-2004 (ATACC) Analog Telecom ASIC & Circuit ConceptsForumA/D D/A Building Blocks for Telecom Tranceiver Applications

    Comparison with current status and future developments at Infineon

    Circuits and technology (production process) trends

    Conclusions

  • F. DielacherMarch_04

    AD/DA converters most significant results

    High-Speed A/D Converters bring 1 GSPS performance into the main stream

    14-Bit D/A Converter pushes to 1.4GS/s, allowing direct synthesis of broadband/IF signals

    Sigma-Delta Modulators extend signal bandwidths: 10MHZ to 12MHz

    More sophisticated calibration techniques enhance the accuracy of high resolution pipelined A/D converters

    A Digitally Enhanced 1.8V 15b 40MS/s CMOS Pipelined ADC [25.1]UC San Diego

    A 15-bit 20MS/s CMOS Pipelined ADC with Digital Background CalibrationNational Chiao-Tung University, Taiwan

  • F. DielacherMarch_04

    Wireless, RF and Technology-Directions: most significant results

    Berkeley University Wireless Research Center explores basic elements for a 60GHz transceiver in standard low-cost 0.13m CMOSIBM demonstrates direct-conversion transceiver circuits in 200GHz ft SiGe technology for 60GHz transmissionQuad-band polar-loop transmitter provides 55% efficiency in GSM mode and 35% efficiency in EDGE mode

    Quad-Band GSM-GPRS Transmitter in 0.13m CMOS

    A true single-chip Bluetooth IC with RF, baseband, memory and power-management functions

    Single-chip ISDB-T tuner for mobile cellular handsets.

    Ultrawideband amplifiers (3-10GHz) in SiGe and CMOS

    Oscillators and synthesizers above 10GHz

  • F. DielacherMarch_04

    Digital and Signal-Processing: most significant results

    Integration of multiple independent processor cores on a single die

    New processors in 90nm technology

    Dynamic voltage and frequency control for power management

    Mixed body bias techniques for low-voltage operation

    A Highly-Integrated 3G CDMA2000 1X Cellular BasebandChip With GSM/AMPS/GPS/Bluetooth Multimedia Capabilities and ZIF RF Support

  • F. DielacherMarch_04

    Samsung

    Japan

    IBM

    Intel

    Infineon comm

    Intel comm

    TI comm

    ISSCC 2004: 16 pres. 90 nm CMOS

  • F. DielacherMarch_04

    Mixed-signal/Ultra High-speed Digital

  • F. DielacherMarch_04

    Active Device Comparison Matrix

  • F. DielacherMarch_04

    Entwicklungsfortschritte ft & fmax bei Silizium Bipolar undCMOS als Enabler fr neue Consumer Anwendungen

    Ft &

    fmax

    (GH

    z)

    0.1

    1

    10

    100

    1000

  • F. DielacherMarch_04

    Infineons HF BiCMOS Technologies and Applications

  • F. DielacherMarch_04

    98 GHz Voltage Controlled Oscillator in SiGe:C Technology

  • F. DielacherMarch_04

    Platform CMOS Technology Roadmap

    L65 (65nm)

    L45 (45nm)

    L32 (32nm)

    2003 2004 2005 2006 2007

    C11 (130nm)

    L90 (90nm)

    C11 FLASH

    C11 FLASH - R

    C10DE (180nm)(logic based)C10DD (170nm)(DRAM based)

  • F. DielacherMarch_04

    SOC Design Cost Model

    $342

    ,417

    ,579

    $15,

    066,

    373

    $10,000,000

    $100,000,000

    $1,000,000,000

    $10,000,000,000

    $100,000,000,000

    1985 1990 1995 2000 2005 2010 2015 2020Year

    Tota

    l Des

    ign

    Cos

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    g sc

    ale)

    RTL Methodology Only

    With all Future Improvements

    In-H

    ouse

    P&R

    Tall T

    hin

    Engi

    neer

    Smal

    l Blo

    ck R

    euse

    IC Im

    plem

    enta

    tion

    tool

    s

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    e Bl

    ock

    Reu

    se

    Inte

    lligen

    t Tes

    tben

    ch

    ES L

    evel

    Met

    hodo

    logy

    Design Cost of SOC-LP PDA Driver

  • F. DielacherMarch_04

    IP Mix-and-Match

    Switching Fabric

    Sc

    hedu

    ler

    CustomerIP

    FIB

    3rd PartyIP

    FIB

    FIB

    InfineonIP

    FIB

    InfineonIP

    FIB

    CustomerIP

    PE Processing ElementFIB Fabric Interface Block

    OpenArch.

    ISA Core

    FIB

  • F. DielacherMarch_04

    Circuit techniquesAD-Converter concepts and performance requirements

    DefinitionsD/A ConverterBuilding blocks

    5

    7

    9

    11

    13

    15

    17

    19

    1.000 10.000 100.000 1.000.000 10.000.000 100.000.000 1.000.000.00010 k 100 k 1 M 10 M 100 M1 k

    Sigma Delta

    SAR

    2stepflash

    Flash1 GBandwidth/f3dB

    SAM

    QAP

    DECT

    2nd order SD

    HDSL2

    ADSL

    Multi 4bit ADSL

    Audo1

    MC ADC

    MC ADC

    DECT

    ADC SAR

    PIP 4

    SCTV100SNORC ABACUS

    M676

    G1763

    CT-SDSAR R1

    SAR R2

    SCTV100

    M2TVTpro

    PipelinedCT-SD

    Flash_CAL

    Dig_ADC

    N-stepPipelined

    Folding

    VDSL

    Folding

    N-step

    Pipelined

    non bin SAR

    QPSK

    Folding

    2step C10

  • F. DielacherMarch_04

    Gatelength:0.12Gatelength:0.12m 0.065mmm 0.065mm22 GatelengthGatelength 0.080.08m 0.032mmm 0.032mm22

    Low Power version:Low Power version: 512*512*oversamplingoversampling 12bit Analog Input: 012bit Analog Input: 0--8KHz8KHz1.2Volt 0.5mW 84dB SNR 0.065mm1.2Volt 0.5mW 84dB SNR 0.065mm22

    Other applications:Low Power

    Successive ApproximationNon Binary SA-Converter

    DefinitionsD/A ConverterBuilding blocksA/D Convertersnon binary SAR

  • F. DielacherMarch_04

    Chip area / power consumption comparison BiCMOS CMOS

    BiCMOS (0.35m) CMOS (0.13m)Power consumption 100% 40%Chip area 100% 50%

    RF/Analog Adders:Add MIM CapAdd thick dielectric/metalAdd MOS varactorAdd Models andDevice Level Design Kit

  • F. DielacherMarch_04

    Supply Voltage Trends in Transceivers and PAs

    5.5V5V

    3.3V 3.5V

    1.2V

    2.5V

    3.3V

    1.8V

    1.0V1.3V

    1.8V2.5V

    Vsupply

    t

    Power AmplifierRadio / TransceiverBaseband / Others

    There is a growing disparity between the supply of the PA and rest of the system, due to process scaling in silicon ICs

    A lower voltage PA is an inevitability and just a matter of time

    Battery technology developments

    Whats going tohappen here?

  • F. DielacherMarch_04

    Personal Trusted Device - PTD

    There will be a strong demand for "Personal Trusted Devices" (PTD) which are providing

    Platform Integrity (e.g. TCPA* compliance, ) Communication Security

    Bulk encryptionSecurity protocols (e.g. IP Sec, IEEE 802.1x, SSL/TLS, )

    Generic Security Platform for E-Commerce applicationsDownloading of signed content(e.g. Java applications)Security-support for applications through API extensionsSecure log-in to PC / networkDRM (Digital Right Management)Secure E-mail

    Security founded on secure silicon, the MobileCrypt* will be the answer.* TCPA = Trusted Computing Platfrom Alliance founded by Compaq, HP, IBM, Intel, and Microsoft** TCPA compliant Trusted Platform Module for Mobile Devices

  • F. DielacherMarch_04

    xDSLFiber OpticsFiber-to-the-homeOptical NetworkingLAN/WAN/MAN

    Car Electronics:PowertrainSafety Mgmt.Comfort Mgmt.Infotainment

    Power Conversion:Power SuppliesDrives

    SDR + DDR DRAM Mobile RAMCellularRAMGraphics RAM RLDRAMMRAM/FRAMFlash

    Secure Mobile Applications Communications PaymentComputing EntertainmentWide / Local / Personal Area Wireless, GPS

    Infineon's Target Applications

    Infineon'sCore CompetenciesBroadband / Access

    Secure Mobile SolutionsAutomotive & Industrial

    Memory

  • F. DielacherMarch_04

    Infineon World-wide R&D Network in Europe

    SalzgitterMobile Phones

    Software

    DuisburgAutomotiveSolutions

    UlmRF ICs

    for GSM

    HortenTire pressure

    sensors

    DsseldorfDataComCordlessBluetooth

    WarsteinHigh Power

    AalborgWirelessSystems

    KistaWireless syst.

    Communic.

    GrazSecurity Autom.Sense&ControlRFID Solutions

    VillachMixed Signal

    CoresTelecom

    MunichMixed Signal

    CoresAutom. Power

    AugsburgSecuritySoftware

    RegensburgInterconnect.Packaging

    PadovaAutomotive &Indust. Power

    SophiaAntipolisLibraries

    Wireless ASICs

    LinzUMTS/GSM/GPRS/EDGE

    Wireless Contr.

    DublinSecuritySoftware

    KarlsruheEmulators forMicrocontr.

    BristolHigh Perform.

    Cores

    NurembergGSM software

    Base BandRF Devices

    Wireless DiscretesIP-CoresMixed Signal

    AutomotivePower

    PortoMemories

    Memory Security Technology Design Flow

    Corbeil-Essonnes

    Hamburg

    ChemnitzWireless

    Applications

    DresdenDRAM fabs

    & cell / Flash

    ErlangenMemories

    BerlinFiber

    Optics

    HannoverWireless

    Braun-schweig

    LinkoepingWireless

    ViennaUMTS Baseb.DSP Firmware

  • F. DielacherMarch_04

    Infineon World-wide R&D Network (excluding Europe)

    NetanyaTelecom.

    Flash Memory

    BurlingtonDRAM

    Product dev.

    PrincetonRF I