ISSCC-2004: Latest Trends in Technologies and Circuits for ... · PDF file14-Bit D/A Converter...
Transcript of ISSCC-2004: Latest Trends in Technologies and Circuits for ... · PDF file14-Bit D/A Converter...
F. DielacherMarch_04
ISSCC-2004: Latest Trends in Technologies and Circuits for Wireless Communications
18. March 2004
F. DielacherMarch_04
Outline ISSCC-2004 summary of major highlights
AD/DA-Converters
Wireless, RF and Technology-Directions
Digital and Signal-Processing
ISSCC-2004 (GIRAFE) Gigahertz Radio Front Ends ForumRF Power Amplifiers
ISSCC-2004 (ATACC) Analog Telecom ASIC & Circuit ConceptsForumA/D D/A Building Blocks for Telecom Tranceiver Applications
Comparison with current status and future developments at Infineon
Circuits and technology (production process) trends
Conclusions
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AD/DA converters most significant results
High-Speed A/D Converters bring 1 GSPS performance into the main stream
14-Bit D/A Converter pushes to 1.4GS/s, allowing direct synthesis of broadband/IF signals
Sigma-Delta Modulators extend signal bandwidths: 10MHZ to 12MHz
More sophisticated calibration techniques enhance the accuracy of high resolution pipelined A/D converters
A Digitally Enhanced 1.8V 15b 40MS/s CMOS Pipelined ADC [25.1]UC San Diego
A 15-bit 20MS/s CMOS Pipelined ADC with Digital Background CalibrationNational Chiao-Tung University, Taiwan
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Wireless, RF and Technology-Directions: most significant results
Berkeley University Wireless Research Center explores basic elements for a 60GHz transceiver in standard low-cost 0.13m CMOSIBM demonstrates direct-conversion transceiver circuits in 200GHz ft SiGe technology for 60GHz transmissionQuad-band polar-loop transmitter provides 55% efficiency in GSM mode and 35% efficiency in EDGE mode
Quad-Band GSM-GPRS Transmitter in 0.13m CMOS
A true single-chip Bluetooth IC with RF, baseband, memory and power-management functions
Single-chip ISDB-T tuner for mobile cellular handsets.
Ultrawideband amplifiers (3-10GHz) in SiGe and CMOS
Oscillators and synthesizers above 10GHz
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Digital and Signal-Processing: most significant results
Integration of multiple independent processor cores on a single die
New processors in 90nm technology
Dynamic voltage and frequency control for power management
Mixed body bias techniques for low-voltage operation
A Highly-Integrated 3G CDMA2000 1X Cellular BasebandChip With GSM/AMPS/GPS/Bluetooth Multimedia Capabilities and ZIF RF Support
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Samsung
Japan
IBM
Intel
Infineon comm
Intel comm
TI comm
ISSCC 2004: 16 pres. 90 nm CMOS
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Mixed-signal/Ultra High-speed Digital
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Active Device Comparison Matrix
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Entwicklungsfortschritte ft & fmax bei Silizium Bipolar undCMOS als Enabler fr neue Consumer Anwendungen
Ft &
fmax
(GH
z)
0.1
1
10
100
1000
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Infineons HF BiCMOS Technologies and Applications
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98 GHz Voltage Controlled Oscillator in SiGe:C Technology
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Platform CMOS Technology Roadmap
L65 (65nm)
L45 (45nm)
L32 (32nm)
2003 2004 2005 2006 2007
C11 (130nm)
L90 (90nm)
C11 FLASH
C11 FLASH - R
C10DE (180nm)(logic based)C10DD (170nm)(DRAM based)
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SOC Design Cost Model
$342
,417
,579
$15,
066,
373
$10,000,000
$100,000,000
$1,000,000,000
$10,000,000,000
$100,000,000,000
1985 1990 1995 2000 2005 2010 2015 2020Year
Tota
l Des
ign
Cos
t (lo
g sc
ale)
RTL Methodology Only
With all Future Improvements
In-H
ouse
P&R
Tall T
hin
Engi
neer
Smal
l Blo
ck R
euse
IC Im
plem
enta
tion
tool
s
Larg
e Bl
ock
Reu
se
Inte
lligen
t Tes
tben
ch
ES L
evel
Met
hodo
logy
Design Cost of SOC-LP PDA Driver
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IP Mix-and-Match
Switching Fabric
Sc
hedu
ler
CustomerIP
FIB
3rd PartyIP
FIB
FIB
InfineonIP
FIB
InfineonIP
FIB
CustomerIP
PE Processing ElementFIB Fabric Interface Block
OpenArch.
ISA Core
FIB
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Circuit techniquesAD-Converter concepts and performance requirements
DefinitionsD/A ConverterBuilding blocks
5
7
9
11
13
15
17
19
1.000 10.000 100.000 1.000.000 10.000.000 100.000.000 1.000.000.00010 k 100 k 1 M 10 M 100 M1 k
Sigma Delta
SAR
2stepflash
Flash1 GBandwidth/f3dB
SAM
QAP
DECT
2nd order SD
HDSL2
ADSL
Multi 4bit ADSL
Audo1
MC ADC
MC ADC
DECT
ADC SAR
PIP 4
SCTV100SNORC ABACUS
M676
G1763
CT-SDSAR R1
SAR R2
SCTV100
M2TVTpro
PipelinedCT-SD
Flash_CAL
Dig_ADC
N-stepPipelined
Folding
VDSL
Folding
N-step
Pipelined
non bin SAR
QPSK
Folding
2step C10
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Gatelength:0.12Gatelength:0.12m 0.065mmm 0.065mm22 GatelengthGatelength 0.080.08m 0.032mmm 0.032mm22
Low Power version:Low Power version: 512*512*oversamplingoversampling 12bit Analog Input: 012bit Analog Input: 0--8KHz8KHz1.2Volt 0.5mW 84dB SNR 0.065mm1.2Volt 0.5mW 84dB SNR 0.065mm22
Other applications:Low Power
Successive ApproximationNon Binary SA-Converter
DefinitionsD/A ConverterBuilding blocksA/D Convertersnon binary SAR
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Chip area / power consumption comparison BiCMOS CMOS
BiCMOS (0.35m) CMOS (0.13m)Power consumption 100% 40%Chip area 100% 50%
RF/Analog Adders:Add MIM CapAdd thick dielectric/metalAdd MOS varactorAdd Models andDevice Level Design Kit
F. DielacherMarch_04
Supply Voltage Trends in Transceivers and PAs
5.5V5V
3.3V 3.5V
1.2V
2.5V
3.3V
1.8V
1.0V1.3V
1.8V2.5V
Vsupply
t
Power AmplifierRadio / TransceiverBaseband / Others
There is a growing disparity between the supply of the PA and rest of the system, due to process scaling in silicon ICs
A lower voltage PA is an inevitability and just a matter of time
Battery technology developments
Whats going tohappen here?
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Personal Trusted Device - PTD
There will be a strong demand for "Personal Trusted Devices" (PTD) which are providing
Platform Integrity (e.g. TCPA* compliance, ) Communication Security
Bulk encryptionSecurity protocols (e.g. IP Sec, IEEE 802.1x, SSL/TLS, )
Generic Security Platform for E-Commerce applicationsDownloading of signed content(e.g. Java applications)Security-support for applications through API extensionsSecure log-in to PC / networkDRM (Digital Right Management)Secure E-mail
Security founded on secure silicon, the MobileCrypt* will be the answer.* TCPA = Trusted Computing Platfrom Alliance founded by Compaq, HP, IBM, Intel, and Microsoft** TCPA compliant Trusted Platform Module for Mobile Devices
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xDSLFiber OpticsFiber-to-the-homeOptical NetworkingLAN/WAN/MAN
Car Electronics:PowertrainSafety Mgmt.Comfort Mgmt.Infotainment
Power Conversion:Power SuppliesDrives
SDR + DDR DRAM Mobile RAMCellularRAMGraphics RAM RLDRAMMRAM/FRAMFlash
Secure Mobile Applications Communications PaymentComputing EntertainmentWide / Local / Personal Area Wireless, GPS
Infineon's Target Applications
Infineon'sCore CompetenciesBroadband / Access
Secure Mobile SolutionsAutomotive & Industrial
Memory
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Infineon World-wide R&D Network in Europe
SalzgitterMobile Phones
Software
DuisburgAutomotiveSolutions
UlmRF ICs
for GSM
HortenTire pressure
sensors
DsseldorfDataComCordlessBluetooth
WarsteinHigh Power
AalborgWirelessSystems
KistaWireless syst.
Communic.
GrazSecurity Autom.Sense&ControlRFID Solutions
VillachMixed Signal
CoresTelecom
MunichMixed Signal
CoresAutom. Power
AugsburgSecuritySoftware
RegensburgInterconnect.Packaging
PadovaAutomotive &Indust. Power
SophiaAntipolisLibraries
Wireless ASICs
LinzUMTS/GSM/GPRS/EDGE
Wireless Contr.
DublinSecuritySoftware
KarlsruheEmulators forMicrocontr.
BristolHigh Perform.
Cores
NurembergGSM software
Base BandRF Devices
Wireless DiscretesIP-CoresMixed Signal
AutomotivePower
PortoMemories
Memory Security Technology Design Flow
Corbeil-Essonnes
Hamburg
ChemnitzWireless
Applications
DresdenDRAM fabs
& cell / Flash
ErlangenMemories
BerlinFiber
Optics
HannoverWireless
Braun-schweig
LinkoepingWireless
ViennaUMTS Baseb.DSP Firmware
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Infineon World-wide R&D Network (excluding Europe)
NetanyaTelecom.
Flash Memory
BurlingtonDRAM
Product dev.
PrincetonRF I