IS/QC 750104 (1993): Semiconductor Devices - Discrete ...

Disclosure to Promote the Right To Information

Whereas the Parliament of India has set out to provide a practical regime of right to information for citizens to secure access to information under the control of public authorities, in order to promote transparency and accountability in the working of every public authority, and whereas the attached publication of the Bureau of Indian Standards is of particular interest to the public, particularly disadvantaged communities and those engaged in the pursuit of education and knowledge, the attached public safety standard is made available to promote the timely dissemination of this information in an accurate manner to the public.

इंटरनेट मानक

“!ान $ एक न' भारत का +नम-ण”Satyanarayan Gangaram Pitroda

“Invent a New India Using Knowledge”

“प0रा1 को छोड न' 5 तरफ”Jawaharlal Nehru

“Step Out From the Old to the New”

“जान1 का अ+धकार, जी1 का अ+धकार”Mazdoor Kisan Shakti Sangathan

“The Right to Information, The Right to Live”

“!ान एक ऐसा खजाना > जो कभी च0राया नहB जा सकता है”Bhartṛhari—Nītiśatakam

“Knowledge is such a treasure which cannot be stolen”

“Invent a New India Using Knowledge”

है”ह”ह

IS/QC 750104 (1993): Semiconductor Devices - DiscreteDevices - Bipolar Transistors - Blank Detail BipolarTransistors for Switching Applications [LITD 5:Semiconductor and Other Electronic Components and Devices]

IS ac 750104 : 1993

IEC QC 750104 : 1991

Indian Standard

SEMICONDUCTOR DEVICES - DISCRETE DEVICES - BIPOLAR TRANSISTORS - BLANK

DETAIL SPECIFICATION FOR BIPOLAR TRANSISTORS FOR SWITCHING APPLICATIONS

NATIONAL FOREWORD

This Indian Standard, which is identical with IEC Pub 747-7-31 QC 750104 ‘Semiconductor devices - Discrete devices - Part 7 : Bipolar transistors, Section three - Blank detail specification for bipolar transistors for switching applications’, issued by the international Electro- technical Commission ( IEC ), was adopted by the Bureau of Indian Standards on the recommendation of the Semiconductor Devices and Integrated Circuits Sectional Committee ( LT IO ) and approval of the Electronics and Telecommunication Division Council.

The text of the IEC Standard has been approved as suitable for publication as Indian Standard without deviations. Certain conventions are, however, not identical to those used in Indian Standards. Attention is particularly drawn to the following:

a) Wherever the words ‘International Stdndard’ appear, referring to this standard, they should be read as ‘Indian Standard’.

b) Comma ( , 1 has been used as a decimal marker while in Indian Standards, the current practice is to use a point ( . ) as the decimal marker.

In this adopted standard, reference appears to certain International Standards for which Indian Standards also exist. The corresponding Indian Standards which are to be substituted in their place are listed below along with their degree of equivalence for the editions indicated:

International Standards Corresponding Indian Standard Degree of Equivalence

IEC Pub 747-lO/QC 700000 ( 1991 ) IS QC 700000 Semiconductor devices - Identical Semiconductor devices - Part 10 : Generic specification for discrete Generic specification for discrete devices and integrated circuits devices and integrated circuits

IEC Pub 747-ll/QC 750100 ( 1985) IS QC 7501 JO Semiconductor devices - Semiconductor devices - Part 11 :

Identical

Sectional specification for discrete Sectional specification for discrete devices

devices

As in the Original Standard, this Page is Intentionally Left Blank

ISQC 750104 : 1993

IECQC 750104 : 1991

SEMICONDUCTOR DEVICES Discrete devices

Part 7: Bipolar transistors

Section three - Blank detail specification for bipolar transistors for switching applications

INTRODUCTION

The IEC Quality Assessment System for Electronic Components is operated in accordance with the statutes of the IEC and under the authority of the IEC. The object of this system is to define quality assessment procedures in such a manner that electronic components released by one participating country as conforming with the requirements of an applicable specification are equally acceptable in all other participating countries without the need for further testing.

This blank detail specification is one of a series of blank detail specifications for semi- conductoi devices and shall be used with the following IEC publications:

747;l O/QC 700000 (1991): Semiconductor devices, Part 10: Generic specification for discrete devices and integrated circuits.

747-l 1 IQC 750100 (1985): Semiconductor devices, Part 7 7: Sectional specification for discrete devices.

Required information

Numbers shown in brackets on this and the following pages correspond to the following items of required information, which should be entered in the spaces provided.

Idqtificafion of the detail specification

[l] The name of the National Standards Organization under whose authority the detail specification is issued.

[2] The IECQ number of the detail specification.

[3] The numbers and issue numbers of the generic and sectional specifications.

[4] The national number of the detail specification, date of issue and any further information required by the national system.

Identification of the component

[6] Type of component.

[S] Information on typical construction and applications. If a device is designed to satisfy several applications, this shall be stated here. Characteristics, limits and inspection requirements for these applications shall be met. If a device is electrostatic sensitive, or contains hazardous material, e.g. beryllium oxide, a caution statement should be added in the detail specification.

3

ISQC 750104 : 1993

IEC QC 750104 : 1991

[7) Outline drawing and/or reference to the relevant standard for outlines.

[8] Category of assessed quality.

[9] Reference data on the most important properties to permit comparison between component types.

Fhroughout this standard, the texts given in square brackets are intended for guidance to the specification writer and should not be included in the detail specification.]

rhroughout this standard, when a characteristic or rating applies, “x” denotes that a value shall be inserted in the detail specification.]

4

ISQC 750104 : 1993

IEC QC 750104 : 1991

[Name (address) of responsible NAI 111 [Number of IECO detail specification 121 (and possibly of body from which specification plus issue number and/or date.]

is available).] QC 750104-xxx

ELECTRONIC COMPONENT OF ASSESSED I31 [National number of detail specification.] [41 QUALITY IN ACCORDANCE WITH: [This box need not be used if the National

Generic specification: Publication 747-IOlQC 700000 number repeats IECQ number.]

Sectional specification: Publication 747-l l/CC 750100

[and national references if different.]

DETAIL SPECIFICATION FOR: vype number(s) of the relevant device(s).]

I51

Ordering information: see clause 7 of this standard.

1 Mechanical description

Outline referendes:

IEC 191-2... [mandatory if available] and/or

national [if there is no IEC outline.]

171

2 Short description

Ambient or case-rated bipolar transistor for

switching applications, (NPNIPNP.]

Semiconductor material: [Si]

Encapsulation: [cavity or non-cavity.]

El

Outline drawing

[may be transferred to or given with more details in

clause 10 of this standard.]

Caution: Observe precautions for handling

ELECTROSTATIC SENSITIVE DEVICES

[if applicable]

Teminal identification

[drawing showing pin assignments including 3 Categories of assessed quality graphical symbols.]

[from subclause 2.6 of the generic

specification.] PI

Marking: [letters and figures, or colour code.] [The detail specification shall prescribe the information

to be marked on the device, if any.]

Reference data PI

[See subclause 2.5 of the generic specification

and/or clause 6 of this standard.]

[Polarity indication, if a special method is used.]

Information about manufacturers who ‘have components qualified to this detail specification is available in the current Gualified Products List.

5

-...

IS QC 750104 : 1993

IEC QC 750104 : 1991

4 Limiting values (absolute maximum rating system)

These values apply over the operating temperature range unless otherwise specified.

[Repeat only subclause numbers used, with title. Any additional values should be given at the appropriate place, but without subclause number(s).]

[Curves should preferably be given under clause 10 of this standard.]

Value Subclause Parameters Symbol

min. max.

4.1 Operating ambient or case temperatures T mblcare X X

4.2 Storage temperatures T l 18

X X

4.3 Collector-base voltage

Maximum continuous (direct) collector-base voltage

with zero emitter current

(should be given if VcER and/or VoEs are not given.

which are preferable) Vcao X

4.4 Collector-emitter voltage

One (preferably VcEo) or more of the following

shall be specified:

Maximum continuous (direct) collector-emitter voltage

with zero base current

V CEO X


with specified reverse base voltage


with base short-circuited to emitter


with specified external resistance Ra.

V CEX

X

V CES

X

V CER

X

4.5 Emitter-base voltage:

Maximum emitter-base continuous (direct) reverse

voltage with zero collector current

V EBO X

4.6

4.7

Maximum continuous collector current and, where 42 X

appropriate, repetitive peak collector current I CM X

Where appropriate: maximum continuous base current; ‘a X

repetitive peak base current may be added I BM X

4.6 Where appropriate: maximum continuous emitter current; ‘E X

repetitive peak emitter current may be added I EM X

4.9

,4.9.1

4.9.2

Power dissipation:

Any special requirements for cooling or mounting should

be specified

Maximum total power dissipetion as’a function of. P,,,(T) X

temperature or:

Maximum virtual (equivalent) junction temperature, T(,1)

X

and maximum power dissipation P(tct) X

4.10 For case-rated types and, where appropriate, for ambient-rated types:

- area of safe operation (for example curves /, versus

VCE) d.c. and. where appropriate, pulse

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ISQC 750104 : 1993

IECQC 750104 : 1991

5 Electrical characteristics

See clause 8 of this standard for inspection requirements.

[Repeat only subclause numbers used, with title. Any additional characteristics should be given at the appropriate place but without subclause number.]

[When several devices are defined in the same detail specification, the relevant ValUSS

should be given on successive lines, avoiding repeating identical values.]

[Curves should preferably be given under clause 10 of this standard.]

Subclause

5.1

5.2

5.3

5.4

5.5

Characteristics and conditions

at Tmb or T,,,, = 25 ‘C

unless otherwise specifed (see clause 4

of the generic specification)

Static value of common-emitter forward current

transfer ratio at specified VCE and I,

(or Vc, and IE), preferably at typical operating

current (d.c. or pulse’)

Maximum collector-emitter saturation voltage

at high I, and specified /a (d.c. or pulse’)

Where appropriate: V CEsat(2)

Maximum collector-emitter saturation voltage

at specified /a and value of I, as for h2,E

in 5.1 (d.c. or pulse’)

NOTE - When the value of I, specified

for h21E is given for the same voltage as

the limit for VCEsalc2), this characteristic

need not be given.

Maximum base-emitter saturation voltage

under the same condition as in 5.2

Cut-off currents:

At least one or more, where appropriate, of the

following shall be specified but not lcao alone

because the other currents are preferable:

Maximum collector-base current with the emitter

open-circuited [preferably at maximum

rated Vceo]

Maximum collector-emitter current [under

specified base-emitter bias conditions,

preferably at maximum rated VCEX]

Symbol

h 21E

V CEsat(1)

V BEsat

I CBO(1)

I C=(l)

l- X

Value

max.

--

X l *

i Tested

A3

A2b

A3

A3

A2b

A2b

[’ Preferred pulse conditions: t p = 300 ps, 6 5 2 x.1

r* Where appropriate.]

ISQC 750104 : 1993

IEC QC 750104 : 1991

;ubclause

5.5

(cont.)

5.6


at Tmb or T,,,, = 25 “C

unless otherwise specified (see clause 4


Maximum collector-emitter current with specified

base-emitter resistance [preferably at maximum

rated VoER]

Maximum collector-emitter current with the base

short-circuited to the emitter [preferably at

maximum rated VcEs]


open-circuited Ipreferably at maximum rated

‘CEO]

[and, when appropriate]

Maximum emitter-base current with the collector

open-circuited (preferably at maximum rated

VEBOl

Cut-off currents at high temperature:

[At least one, or more where appropriate, of the

following shall be specified but not /oeo alone

because the other currents are preferable]

Maximum collector-base current, at Vce

[preferably between 65 % and 85 % of maximum

rated Vceo], & = 0. and at a high temperature

Maximum collector-emitter current under specific

base-emitter bias conditions, at VC. [preferably

between 65 % and 65 % of maximum rated Vc,]

and at a high temperature

Maximum collector-emitter current with specified

base-emitter resistance, at V,., Ipreferably

between 65 46 and 35 96 of maximum rated V,,,]



short-circuited to the emitter, at Vc, [preferably

between 65 % and 85 % of maximum rated VcCES]



open-circuited, at Vc. [preferably between 65 %

and 85 96 of maximum rated VcEo] and at a high

temperature

Symbol

'cm(l)

‘Is(l)

I CEO(l)

I EBO

‘CBO(2)

Jcu((2)

‘m?(2)

I CES(2)

‘CEO(,)

T- Value

max.

Tested

A2b

A2b

A2b

A2b

C2b

C2b

C2b

C2b

C2b

a

ISQC 750104 : 1993

IEC QC 750104 : 1991

Subclause

5.7

5.8

5.9

5.10


at Tunb or T,,,, = 25 “C

unless otherwise specified (see clause 4


Switching times and transition frequency

Either (preferably for power switching

transistors):

Maximum switching times [with at least two different times specified], at specified collecteur current I, and base

currents la, and /as (nominal values)

or:

Maximum carrier storage time, at specified

collector current I, and base currents Is,

and /s2 (nominal values) and:

Minimum transition frequency, at specified f, Vcs

and Ic

Common-base output capacitance, at specified

V c., I, = 0, f- 1 MHz

- for ambient-rated devices

- where appropriate, for case-rated devices

When virtual junction temperature is quoted as a rating the maximum value of thermal resistance junction-to-ambient or junction-to-case shall be

given

Where appropriate, curves of maximum thermal

impedance ZnhjP under pulse conditions

T Symbol

t . . .

t 1..

ts

fr

C 22b

R WI-N

R or

rhU+

Value

X

max.

T Tested

1 1 A4 I

A4

A4

C2a

1 )C2d

1

6 Marking

[Any particular information other than that given in box [7] (clause 1) and/or subclause 2.5 of the generic specification shall be given here.]

7 Ordering information

[The following minimum information is necessary to order a specific device, unless otherwise specified:

- precise type reference (and nominal voltage value, if required);

- IECQ reference of detail specification with issue number and/or date when relevant;

9

IS QC 750104 : 1993 IEC QC 750104 : 1991

- category of assessed quality as defined in subclause 3.7 (clause 1 l’j of the sectional specification and, if required, screening sequence as defined in subclause 3.6 (clause 1 O*) of the sectional specification;

- any other particulars.]

8 Test conditions and inspection requirements

rhese are given in the following tables, where the values and exact test conditions to be used shall be specified as required for a given type, and as required by the relevant test in the relevant publication.]

[The choice between alternative tests or test methods shall be made when a detail specification is written.]

[When several devices are included in the same detail specification, the relevant conditions and/or values should be given on successive lines, where possible avoiding repetition of identical conditions and/or values.]

Throughout the following text, reference to subclause numbers is made with respect to the generic specification unless otherwise stated and test methods are quoted from clause 4 (clause 12’) of the sectional specification.

[For sampling requirements, either refer to, or reproduce, values of subclause 3.7 (clause 17 ‘;I of the sectional specification, according to applicable category(ies) of assessed quality.]

[For group A, the choice between AQL or LTPD system shall be made in the detail specification.]

__ __I_..__

.

Of future revision of IEC Publication 747-l 1.

IS QC 750104 : 1993

IEC QC 750104 : 1991

GROUP A Lot by lot

All tests are non-destructive (3.6.6)

Inspection or test

Subgroup A 7

External visual

examination

Subgroup A2a

Inoperative devices

Conditions at Tamr, or T,. = 25 *C Inspection

Symbol Reference unless otherwise specified requirement limits

(see clause 4 of the generic specification)

min. max.

Subclause

4.2.1 .l

Short-circuit: cut-off current

> IlOO times the

cut-off current

limit shown in A2b)

Open-circuit: It,,,(,) < 5

[unless otherwise

specified]

Subgroup A26

Cut-off currents

[One or more of the

following as given in

subclause 5.51:

collector-base current ‘NO(I) 747-7. ch. Ill, As in 5.5 X

sect. four,

subclause 3.2

collector-emitter

current ‘CEx(1) 747-7. ch. III, As in 5.5 X

sect. four,

subclause 3.2

Where appropriate:

collector-emitter

current

I CER(1)

747-7, ch. Ill, As in 5.5 X

sect. four,

subclause 3.2

Where appropriate:

collector-emitter I CES(1)

747-7, ch. Ill, As in 5.5 X

current sect. four,

subclause 3.2 ~_

Where appropriate:

collector-emitter ‘CEO(l)

747-7. ch. Ill, As in 5.5 X

current sect. four,

subclause 3.2

Collector-emitter

saturation voltage

V CEaaC(1)

747-7, ch. III, As in 5.2 X

sect. four,

subclause 3.2

Sub-group A3

Static value of

common-emitter

forward current

transfer ratio

h 21E

747-7, ch. Ill, As in 5.1 X

sect. four,

subcl. 6.4.4

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ISQC 750104 : 1993

IEC QC 750104 : 1991

GROUP A (continued)

Inspection or test

Where appropriate:

collector-emitter

saturation voltage

Conditions at Ta.mb or 7,_ = 25 “C Inspection



min. max.

V CE42)

747-7, ch. III, As in 5.3 X

sect. four,

subclause 3.2

Base-emitter saturation VBEIPt 747-7, ch. III. As in 5.4 X

voltage sect. four.

subclause 3.2

Sub-group A4

Either:

switching times (at

least two values)

747-7, ch. Ill, Nominal values of lo, la, and la2

t . . . sect. four, VI = [specified] X

t . . . subclause 3.3 V2 = [specified] X

V cc = [specified]

RI” = [specified]

R = [specified]

Ini% maximum pulse transition

time = [specified]

or:

carrier storage time

and

transition frequency

747-7. ch. Ill. X

sect. four,

subclause 3.3

747-7. ch. III, VCE I [specified] X

sect. four, I, = [specified]

subclause 3.3 f = [specified]

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IS QC 750104 : 1993

IEC QC 750104 : 1991 GROUP B

Lot by rot (in the case of category I, see the generic specification, subclause 2.6)

LSL = lower specification limit ] }

USL = upper specification limit j from group A

Only tests marked (D) are destructive (3.6.6)

Conditions at T_,,, or T,,, = 25 “C Inspection

unless otherwise specified requirement limits

Inspection or test Symbol Reference (see clause 4 of the generic

specification) min. max.

Sub-group B 1

Dimensions Subcl. 4.2.2. [See clause 1 of

appendix B this standard]

Sub-group 83

Bending, (D) if applicable 749, ch. II, Force = [see 749, ch. II, No damage

(dependent on subcl. 1.2 subclause 1.21

encapsulation)

Subgroup 84

Solderability 749, ch. II, [As specified] Good wetting

subcl. 2.1

Subgroup B5

Rapid change of 749. ch. Ill, [As specified]

temperature, clause 1

followed by

either:

- Damp heat cyclic (D) 749, ch. Ill, Test Db, variant 2.

(for non-cavity clause 4 severity = 55 “C,

devices) number of cycles =

with final measurements:

- cut-off current [Note] As in A2b USL

- forward current h 21 E 747-7, As in A3 LSL

transfer ratio ch. II,

subcl. 6.4.4

- saturation voltage

or:

Sealing (for cavity

devices)

Sub-group B8

Electrical endurance

(168 h)

V CE*at(l) 747-7, As in A2b USL

ch. III.

sect. four

subcl. 3.2

749, ch. Ill Subclauses 7.2, 7.3 or 7.4,

subcl. 7 combined with test Qc, 66-2-17

Relevant Operating life

747,... or

publication high temperature reverse bias


- cut-off current NW As in A2b PUSL

- forward current h 21E 747-7. ch. II. As in A3 0.8LSL

transfer ratio subcl. 6.4.4

- saturation voltage V oEu,(,) 747-7. ch.lll. As in A2b 1 ,PUSL

sect. four,

subcl. 3.2

Subgroup CRRL Attributes information for 83. B4, B5 and 88.

[NOTE - Specify one cut-off current from sub-group A2b. preferably /,_ao.]

lj

IS QC 750104 :’ 1993

IEC QC 750104 : 1991

GROUP C Periodic

LSL = lower specification limit ]

USL = upper specification limit 1 from group *

Only tests marked (D) are destructive (3.6.6)

Inspection or test

Conditions at Tamb or T,,,, = 25 “C Inspection


(see clause 4 of the generic min. max.

specification)

Subgroup Cl

Dimensions Subci. 4.2.2 [See clause 1

appendix B of this standard]

Subgroup C2a

Output capacitance: I - for ambient-rated C

22b 747-7. I Vce = [specified, X

devices ch. III I 10 V prnferred]

sect. four, 1 - where appropriate, subcl. 3.3 I ICE0

for case-rated 1 f=lMHz X

devices 1

Sub-group C2b

Cut-off current(s) at

high temperature:

Collector-base current ‘C,,(2)

747-7, ch. III. Tsmb or Tc_ = [specified high]

sect. four, and:

subcl. 3.2 Vce = [preferably between 65 % X

and 85 % of Vceo max.]

I, = 0

Collector-emitter

current

Collector-emitter

current

I CEX(2)

747-7. ch. Ill, VCE = [preferably between 65 % X

sect. four, and 85 % of Vcw max],

subcl. 3.2 Va8 = [X specified]

Collector-emitter

current

= [preferably between 65 46

Collector-emitter

current

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IECQC 750104 : 1991

GROUP C (continued)

inspection or test Symbol Reference

Conditions at Tarnb or 7,,_ = 25 % inspection

unles otherwise specified requirement limits


min. max.

Sub-groups C2d

Thermal resistance,

where appropriate

Sub-group C3

Robustness of :

terminations

tensile and/or torque

(dependent on

encapsulation)

R ,h(,_*) 747-2, ch. IV (As specified] X

%J-C) subcl. 2.2

749, ch. II. [749. ch. II, subclause 1 .l or 1.41 No damage

subcl. 1.1

749, ch II,

subcl. 1.4

Sub-group C4

Resistance to soldering 749, ch. II, 1749, ch. II, subclause 2.21

heat (‘3 subcl. 2.2


- cut-off current [Note] 747-7, ch. Ill. As in A2b USL

sect. four,

subcl. 3.2

- saturation voltage V CE,alc,j 747-7, ch. Ill, As in A2b USL

sect. four,

subcl. 3.2

- forward current h 21E

747-7. ch. II, As in A3 LSL


Subgroup C6

Acceleration steady- 749, ch. II. [As specified]

state (for cavity devices clause 5

only)


- cut-off current [Note] 747-7, ch. Ill. As in A2b

sect. four,

subcl. 3.2

- saturation voltage V CEw(1)

As in A2b

- forward current h21E

747-7. ch. II, As in A3


[NOTE - Specify one cut-off current from subgroup A2b, preferably /oar,.]

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IS QC 750104 : 1993 IEC,QC 750104 : 1991

GROUP C (continued)

Inspection or test Symbol Reference

Conditions at Tunb or 7,,, = 25 “C Inspection

unless otherwise specified requirement limits

(see clause 4 of the generic min. max.

specification)

Subgroup C7 (0)

Damp heat, steady-state

(for non-cavity devices

only)

or:

damp heat, cyclic

with finalmeasurements:

(To be specified]

749,

ch. Ill,

clause 5

749,

ch. III,

clause 4

Test 58. severity 1

As specified

Subgroup CS

Electrical endurance Relevant 1 Operating life at

(1 000 h) 747-...

publication I

high temperature

1 t:gh temperature

J reverse bias


- cd-off current [Note] As in A2b 2USL

- saturation voltage V ,.8,.r(,) 747-7, ch. Ill, As in A2b 1 .PUSL

sect. four,

subcl. 3.2

- forward current h 21E 747-7. ch. II, As in A3 0.8LSL


Subgroup C9

Storage at high 749, ch. III. [Min. 1000 h at Tats max.]

temperature (D) clause 2


- cut-off current [Note] 747-7, ch. Ill, As in A2b PUSL

sect. four,

subcl. 3.2

- saturation voltage V CEsat(l) As in A2b 1 .PUSL

- forward current h 21E 747-7. ch. II. As in A3 O,BLSL


Subgroup CRRL Attributes information for C3. C6, C7 and C9.

Measurement information before and after C8.

WOTE - Specify one cut-off current from sub-group A2b, preferably /oeo.]

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IEC QC 750104 : 1991

9 Group D - Quattftcation approval tests

[When required, these tests shall be prescribed in the detail specification.]

10 Additional information (not for inspection purposes)

[To be given only as far as necessary for the specification and use of the device, for instance:

- temperature derating curves referred to in the limiting values;

- complete definition of a circuit for measurement, or of an additional method;

- detailed outline drawing.]

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IS/QC 750104 (1993): Semiconductor Devices - Discrete ...

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