Investigation of the change in the electronic properties of FeF 3 by the...
Transcript of Investigation of the change in the electronic properties of FeF 3 by the...
Investigation of the Change in the Electronic Propertiesof FeF3 by the Introduction of Oxygen Using a MolecularOrbital Method
Yongseon Kim,* Sujin Choi, and Subin Kim
FeF3 has attracted interest as a conversion-reaction-based posi-
tive electrode material in applications to lithium ion batteries.
However, slow reaction kinetics is a major drawback due to its
poor electrical conductivity. The electronic features of FeF3
were examined using the DV-Xa molecular orbital method.
This article reports the effects of oxygen doping on the bond-
ing characteristics and electrical conductivity. An analysis of
the bond overlap population and spatial distribution of elec-
trons showed that the FeAO bond has a more covalent nature
than the FeAF bond. New energy levels were generated in the
original band gap region through an interaction between the
Fe3d and O2p orbitals with the introduction of oxygen. The
electrical conductivity of FeF3 is expected to be increased by
the partial substitution of oxygen for fluorine due to the
higher covalent character and the formation of new energy
levels. VC 2013 Wiley Periodicals, Inc.
DOI: 10.1002/qua.24566
Introduction
Lithium ion batteries (LIBs) are currently the main power
source of mobile electronic devices due to their high density
of energy storage.[1,2] The multifunctionalization of mobile
devices and the expansion of applications of LIBs to electric
vehicles or power storage systems require a persistent increase
in the energy storage capacity of LIBs. For this, the develop-
ment of high-capacity active materials is essential, but difficult.
Moreover, the limit for increasing the capacity of conventional
materials, for which electrochemical performance is based on
intercalation/deintercalation of Li ions, has been reached
because the number of available electrons is determined by
the number of Li sites in the crystal. For example, LiCoO2,
which is the positive electrode material used most widely, can
accommodate only one Li ion; therefore, only one electron per
formula unit is possible by using only two oxidation states of
Co31 and Co41.
As an alternative, new active materials of a conversion reac-
tion have attracted attention.[3–5] Among the various oxide,
nitride, fluoride, and phosphide materials examined thus far,
FeF3 has attracted particular interest because it is expected to
be used as a positive electrode material, due to its relatively
high operating voltage.[5–10] The slow kinetics of the conver-
sion reaction might be the main drawback to the commerciali-
zation of fluorides, including FeF3, causing a decrease in the
discharge voltage and difficulty in achieving a high rate or
room temperature operation. The reaction rate is closely
related to the electrical conductivity and ionic diffusivity.[7–12]
Therefore, improving them may be a key factor for the appli-
cation of these materials to LIBs. Badway et al. reported that
compositing FeF3 with conducting carbon by high energy mill-
ing could increase the electrical conductivity and achieve a
stable electrochemical operation.[6,7] A composite of FeF3 and
carbon nanotube or graphene has been reported.[13–15]
The partial oxidation of fluoride materials has been eval-
uated as a way of improving the intrinsic conductivity.[8,16–18]
Metal oxyfluorides, such as FeOF or Fe2OF4, or partially oxi-
dized FeF3, can show better electrochemical properties than
pure FeF3. Researchers have attributed this improvement to
the increased conductivity by the introduction of covalent
MAO bonds into highly insulating MAF ionic bonds,[8,16,17] but
this interpretation is not based on precise analysis or support-
ing information. In this study, the electronic states of FeF3
were examined by a first principle method, focusing on the
change in the electronic states and the bonding nature with
the partial substitution of F by O in particular. The effect of
the introduction of O on the electrical conductivity of FeF3 is
discussed based on the calculation results.
Methods
The electronic properties, such as the density of states (DOS),
bond overlap population (BOP), and spatial charge distribution
were analyzed using a first-principles discrete variational Xa(DV-Xa) molecular orbital method.[19] This method numerically
solves the Schr€odinger equation for a many-body system
based on a linear combination of atomic orbitals (LCAO)
approximation and the Xa potential using the Har-
tree2Fock2Slater method.[20] The molecular orbitals based on
the LCAO approximation and the exchange interaction term of
the Xa potential are expressed as
Y. Kim, S. Choi, S. Kim
Department of Materials Science and Engineering, Inha University, Incheon
402–751, Korea
Fax: (182) 32 862 5546
E-mail: [email protected]
Contract grant sponsor: Inha University Research Grant;
contract grant number: INHA-46435.
VC 2013 Wiley Periodicals, Inc.
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uj rð Þ5X
icijvi rð Þ;VXC rð Þ523a 3q rð Þ=4pð Þ1=3
where uj is the molecular orbital wave function, cij is a weight-
ing coefficient, vi is the atomic orbital wave function, and q is
the electron density. The a parameter varies in value depend-
ing on the atomic species and approaches 2/3 with increasing
the atomic number.[21]
The DV-Xa molecular orbital method requires no restrictions
imposed in the form of the basis functions because the calcu-
lation is conducted numerically. Consequently, LCAO can be
used without modification. This method does not use the
pseudopotential approximation. All the atomic orbitals of the
model cluster are included in the calculation, which can pro-
vide reliable information on the molecular orbitals and elec-
tron distributions.[22–24]
[Fe19F84] and [Fe19F83O1] cluster models were prepared for
the calculation of this study. A Fe atom was centered in both
clusters, and one of the six neighboring F atoms was substi-
tuted by O in the [Fe19F83O1] cluster. Substitution of only one
F atom with an O atom may seem too small, but the introduc-
tion of many O atoms affects the Madelung field. The consid-
eration of many configurations to locate O atoms in the
cluster would be necessary, making the calculation far more
complicated. Decreasing the cluster size could be an alterna-
tive way to increase the relative amount of O, but a smaller
cluster results in poor accuracy. Although only one O atom is
introduced in this study, the analysis provides insight by focus-
ing on the local change near the O site.
To prepare the cluster models, a large FeF3 crystal model
composed of more than 1000 atoms was constructed. Atoms
beyond a certain distance from the central Fe atom were
removed, and the clusters were modified so that the surface
would be terminated with F atoms. Although the Fe/F ratio of
the clusters deviated from the stoichiometric value used for
the preparation method, this caused neither any significant
calculation error nor inaccuracy of the oxidation number of Fe,
because an analysis of the electronic properties was per-
formed only for atoms of the inner position in the cluster, and
the oxidation number was programmed to be input independ-
ently. This technique appears reasonable because the surface
F atoms provide a bulk-like environment for the target atoms
inside by ensuring that they contain no broken bonds.[22]
Any changes in the lattice structure with the substitution of
O for F was not reflected, which might be justified considering
that the introduction of O made only a slight change to the
lattice parameter for FeF3 due to the similar ionic radii of O
and F.[16] A distortion of the structure is expected to be negli-
gible because only one F atom out of 84 was substituted. The
calculation results of the DV-Xa method were compared with
and without prior crystal structure relaxation using the density
functional theory (DFT) method, which did not show any sig-
nificant difference. Figure 1 shows a diagram of the clusters,
and Table 1 provides the structural information, in which
opposite magnetic moments were applied to Fe1, Fe2, and
Fe3, considering that FeF3 is an antiferromagnetic material.[25]
The electronic states and bonding characteristics were calcu-
lated using the SCAT program of the DV-Xa software package.
The distribution of charge was calculated by Mulliken popula-
tion analysis. All DOS diagrams were constructed assuming
that each energy level shows a Gaussian distribution, of which
the full width half maximum is 0.1 eV. The clusters were
located in a uniform Madelung potential field to reflect the
electrostatic interaction with the surrounding atoms because
the DV-Xa method does not use periodic boundary conditions.
The Madelung potential field was determined by positioning
point charges at the atomic sites and translating three unit
cells for each direction.
Results and Discussion
Figures 2 and 3 show the DOS diagrams calculated using the
DV-Xa molecular orbital method. The energy level of the high-
est occupied molecular orbital (HOMO) was positioned at 0 eV
in the figures. Figure 2a shows the total DOS of pure FeF3, for
which the band gap was calculated to be �2.5 eV. Li et al. cal-
culated the band gap with a ferromagnetic or antiferromag-
netic configuration by DFT, applying the generalized gradient
approximation (GGA) or GGA 1 U, and reported a band gap of
0.267 eV (ferromagnetic/GGA) �4.138 eV (antiferromagnetic/
GGA 1 U).[25] Although the band gap energy of this study is
slightly underestimated, the value of 2.5 eV, which can be
interpreted as the band gap of a semiconductor or insulator
depending on the viewpoint, may be acceptable for a discus-
sion of the change in electronic states upon the introduction
of O.
Figure 1. The [Fe19F84] cluster model used for the calculation. One of the
six neighboring F atoms of the central Fe was substituted by O for the cal-
culation of the [Fe19F83O1] cluster. [Color figure can be viewed in the online
issue, which is available at wileyonlinelibrary.com.]
Table 1. Structural information of the cluster used for the calculation.
Distance from
the center (A)
Number
of atoms Spin
Fe 0 (centered atom) 1 High (up)
F (O) 1.9191 6 –
Fe 3.7327 6 High (down)
F 3.8551�–5.1030 30 –
Fe 5.1963�–5.3600 12 High (up)
F 5.6168�–7.0071 48 –
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International Journal of Quantum Chemistry 2014, 114, 340–344 341
Figure 2b shows the DOS diagram of FeF3, for which F ions
are partially substituted by O (O-doped FeF3). The overall
shape of the DOS was similar to that of pure FeF3, as shown
in Figure 2a, except for the newly formed levels marked in the
square with a broken line. The position of the DOS curve
shifted because the HOMO level energy changed with the for-
mation of new levels. The DOS curve of O-doped FeF3 became
more continuous than that of pure FeF3 because new levels
were formed in the region, which was a band gap region
before the introduction of O.
For a close examination of the energy levels formed with the
introduction of O, Figure 3 presents the projected DOS (p-DOS)
of each atom. Figures 3a–3c show Fe3d, F2p, and Fe4s 1 4p
p-DOS of pure FeF3, respectively. The DOS around the band gap
was constructed mainly by Fe3d and F2p orbitals and their inter-
actions. The contribution of the Fe4s and Fe4p orbitals was neg-
ligible in the region (Fig. 3c). One of the spin directions was fully
filled with electrons (i.e., the levels were all below the HOMO
level which was positioned at 0 eV) and the others were almost
empty (Fig. 3a), indicating that Fe was in a high spin state. The
magnetic moment of Fe was calculated to be 4.4 lB. Figures
3d–3f show the p-DOS of Fe3d, F2p, and O2p of O-doped FeF3,
respectively. The diagrams show that the new levels were
formed mainly by an interaction of the Fe3d and O2p orbitals.
The change in the bonding nature of FeF3 was investigated
by examining the effective charge of the atoms and the BOP
of the bonds among them. Table 2 lists the effective charge of
Figure 3. DOS diagrams calculated using the DV-Xa molecular orbital method: a)–c) Fe3d, F2p, and Fe4s 1 Fe4p p-DOS of pure FeF3, d)–f ) Fe3d, F2p, and
O2p p-DOS of oxygen-doped FeF3, respectively. [Color figure can be viewed in the online issue, which is available at wileyonlinelibrary.com.]
Figure 2. DOS diagrams calculated using the DV-Xa molecular orbital
method: a) total DOS of pure FeF3 and b) that of oxygen-doped FeF3.
[Color figure can be viewed in the online issue, which is available at
wileyonlinelibrary.com.]
Table 2. Effective charge of the ions calculated using the DV-Xaa molecu-
lar orbital method.
FeF3 O-doped FeF3 Change of charge
Fe 11.773 11.727 2.6%#F 20.599 20.598 0.2%#O – 20.775 –
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342 International Journal of Quantum Chemistry 2014, 114, 340–344 WWW.CHEMISTRYVIEWS.ORG
each atom obtained from a calculation of the molecular orbi-
tals. The introduction of O slightly decreased the effective
charge of Fe and F. The change in the effective charge of Fe
with the introduction of O was examined as a function of the
distance between Fe and O. The effective charge of the three
types of Fe in Table 1 decreased by 2.6, 1.1, and 0.4%, respec-
tively, indicating that the effective charge of Fe differs accord-
ing to the distance from O, or the introduction of O induces a
deviation of the effective charge of the Fe ions.
Figure 4 presents overlap population (OP) diagrams. The left
and right parts of each diagram in Figure 4 denote the OP of
antibonding and bonding orbitals, respectively. The integrated
value of the OP below the HOMO level, that is, the BOP, is a
measure of the covalent nature of the bonds.[20] Figures 4a–4c
show OP diagrams of FeAF, FeAFe, and FAF bonds of pure
FeF3, and Figures 4d–4f present the OP diagrams of FeAF,
FeAO, and FAO in O-doped FeF3, respectively. The formation of
FeAFe, FAF, and FAO molecular orbitals are negligible com-
pared to the cases of FeAF and FeAO. A comparison of Figures
4d and 4e reveal the FeAO bond to be more covalent than the
FeAF bond. This indicates that the substitution of F with O
increases the covalent nature of the FeF3 crystal.
Table 3 lists BOP data. The introduction of O slightly
increases the antibonding BOP, but decreases the bonding
BOP of the FeAF bond. This may be caused by some change
in the relative position of the bonding and antibonding energy
levels and the HOMO level with O-doping. Despite the change,
covalent characteristics were relatively constant. The covalent
nature of the FeAFe and FAF bonds was basically small and
relatively constant. Figure 4 confirms that the covalent feature
of the FeAO bond is larger than the FeAF bond, based on the
quantitative data of Table 3.
Figure 5 shows a contour map of the electron density on the
plane, which includes one Fe at the center and four negative ions
out of six neighbors of the Fe, before (Fig. 5a) and after (Fig. 5b)
the substitution of one of the four F ions with O. The electron
density of O was smaller than that of F because the atomic num-
ber of O is smaller than F by one, and the effective charge of O
was not large enough to compensate for this. An examination of
the contour lines between Fe and F or O indicates that the elec-
tron density between Fe and O is larger than that between Fe
and F. Therefore, the density of delocalized electrons for the
Figure 4. OP diagrams: a)–c) OP diagrams of FeAF, FeAFe, and FAF of pure FeF3, d)–f ) OP diagrams of FeAF, FeAO, and FAO of oxygen-doped FeF3. [Color
figure can be viewed in the online issue, which is available at wileyonlinelibrary.com.]
Table 3. BOP of the bonds calculated using the DV-Xaa molecular orbital
method.
FeF3 O-doped FeF3
Antibonding Bonding Antibonding Bonding
FeAF 0.105 0.264 0.115 0.251
FeAO – 0.090 0.377
FeAFe 0.002 0.002 0.002 0.002
FAF 0.004 0.004 0.004 0.004
FAO – 0.003 0.002
Figure 5. Contour map of electron density: a) pure FeF3 and b) oxygen-
doped FeF3. [Color figure can be viewed in the online issue, which is avail-
able at wileyonlinelibrary.com.]
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International Journal of Quantum Chemistry 2014, 114, 340–344 343
FeAO bond is larger than that for the FeAF bond, indicating that
the FeAO bond has more covalent features than the FeAF bond.
The increase in the covalent characteristics could improve
the electrical conductivity of FeF3, resulting in faster kinetics of
the conversion reaction, 3Li 1 FeF3 $ 3LiF 1 Fe.[16,17] FeF3 was
reported to be a Mott–Hubbard type insulator, not a charge
transfer insulator.[25] The p-DOS diagram of Fe3d obtained in
this study, presented in Figure 3a, agrees with the features of
a Mott–Hubbard type insulator. In a Mott–Hubbard type insu-
lator, electrical conduction is known to occur through charge
transfer among metal ions.[26]
The change in the electronic states with O-doping is expected
to provide a favorable environment for the electrical conduction
of FeF3, which is a Mott–Hubbard type insulator, considering the
results: with the introduction of O, the Fe3d and O2p orbitals
interact and form rather continuous new energy levels in the
original band gap region. This could facilitate charge transfer
among the Fe ions. The difference in the effective charge among
Fe ions caused by the introduction of O might have an effect
on conduction, but this point requires further investigation. The
effect of Li insertion into the FeF3 crystal would also need to be
considered because the conversion reaction is a complicated,
mixed process of Li insertion and ion diffusion.
Conclusions
The electronic states of FeF3, which has attracted interest as a
conversion-reaction-based positive electrode material in LIBs,
was investigated by a molecular orbital method using the DV-
Xa simulation package. The effect of oxygen doping on the
bonding characteristics and electrical conductivity was dis-
cussed. An analysis of the BOP and distribution of electrons
showed that the FeAO bond has more covalent features than
the FeAF bond. The DOS calculated using this method
showed the characteristics of a Mott–Hubbard type insulator.
New energy levels, which were composed mainly of an inter-
action of Fe3d and O2p orbitals, formed in the band gap
region after the substitution of oxygen for some of the fluo-
rine ions. The changes with the introduction of oxygen are
expected to increase the electrical conduction of FeF3.
Keywords: FeF3 � molecular orbital method � conductivity �lithium ion battery
How to cite this article: Y. Kim, S. Choi, S. Kim, Int. J. Quantum
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Received: 15 August 2013Revised: 3 September 2013Accepted: 9 September 2013Published online 10 October 2013
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