Introduction Si Nanoridges Experimental Nanoimprint · Introduction Si Nanoridges The grating...
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SiNx TEOS SiO2 Si SiO removed in 1%HF. 2 h a Si <110> wafer with 15 nm LPCVD SiN (silicon rich nitride) and 80 nm TEOS annealed at 900 C for 1 hr in a N atmosphere tube. x 2 o SiN removal in 85% H PO @ . Si etching in OPD4262. x 3 4 180 C o g TEOS removal in 1%HF. The substrate is dry oxidized at 950 C. o f SiN undercut etching in 85% . x H PO acid @180 C 3 4 o e Si etching in OPD4262. d SiN etching in 85% H PO acid @180 C. x 3 4 o c Patterned by normal photolithography of 4 μm gratings. TEOS etching in 1%HF. b To facilitate demolding, before imprint, the wafer template is treated with 1H,1H,2H, 2H-perfluorodecyltri-chlorosilane from a gas phase under vacuum condition in a desiccator. The imprint process is performed onto a device wafer coated with an imprint polymer, both mr-I 7010E and PMMA, using an Obducat T-NIL machine. Si nanoridge with a depth of 100 nm and width down to 10 nm. An ‘overview’ of Si nanoridges. UNIVERSITY OF TWENTE Silicon Ridge Nanofabrication by Advanced Edge Lithography for Sub-10 nm NIL Applications 1,2 1 1 1 2 1 1 2 Yiping Zhao, Erwin Berenschot, Henri Jansen, Niels Tas, Jurriaan Huskens, Miko Elwenspoek Transducers Science and Technology, Molecular Nanofabrication, MESA+ Institute for Nanotechnology, University of Twente, POBox 217, 7500AE, Enschede, the Netherlands A new nanofabrication scheme is presented to form stamps useful in thermal nanoimprint lithography (T-NIL). The stamp is created in <110> single crystalline silicon using a full-wet etch-procedure including local oxidation of silicon (LOCOS) and employing an adapted edge lithography (detailed review of edge lithography can be found in reference [1]) on top of conventional photo-lithography. Ridges down to 10 nm in width have been produced. The silicon ridges have no inbuilt stress and are therefore less fragile than previously fabricated oxide ridges [2,3]. The ridge sample is used as a template in T-NIL and a full 100 mm wafer size imprint has been successfully carried out in both polymethyl- methacrylate (PMMA) and mr-I 7010E polymer. Moreover, the imprinted pattern in PMMA is subsequently transferred into a device wafer. technique Experimental Nanoimprint Pattern Transfer Acknowledgment References Si Nanoridges Introduction The grating pattern is transferred from PMMA into the silicon device wafer. The scallops are caused by the pulsed mode RIE procedure (SF /C F ) and can be reduced by proper tuning of the etch tool. 6 4 8 SEM pictures of imprint in mr-I 7010E Mark Smithers is acknowledged for his help in taking the SEM pictures. The project is financed by Nanoned through Strategic Research Orientation (SRO) program Nanofabrication at the MESA+ Institute for Nanotechnology at the University of Twente. [1] Gates, B. D.; Xu, Q.; Stewart, M.; Ryan, D.; Willson, C. G.; Whitesides, G. M., , 105, (4), 1171-1196. [2] Haneveld, J.; Berenschot, E.; Maury, P.; Jansen, H. 2006, 16, S24. [3] Zhao, Y.; Berenschot, E.; Boer, M. d.; Jansen, H.; Tas, N.; Huskens, J.; Elwenspoek, M. 2008, 18, (6), 064013 Chem. Rev. 2005 Journal of Micromechanics and Microengineering Journal of Micromechanics and Microengineering
Transcript of Introduction Si Nanoridges Experimental Nanoimprint · Introduction Si Nanoridges The grating...
SiNx TEOS SiO2 Si
SiO removed in 1%HF.2h
a
Si <110> wafer with 15 nm LPCVD SiN
(silicon rich nitride) and 80 nm TEOSannealed at 900 C for 1 hr in a N
atmosphere tube.
x
2
o
SiN removal in 85% H PO @ .
Si etching in OPD4262.x 3 4 180 C
o
g
TEOS removal in 1%HF.The substrate is dry oxidized at 950 C.
of
SiN undercut etching in 85%
.x H PO acid
@180 C3 4
oe
Si etching in OPD4262.d
SiN etching in 85% H PO acid @180 C.x 3 4
o
c
Patterned by normal photolithography of4 µm gratings. TEOS etching in 1%HF.b
To facilitate demolding, before imprint, the wafer template is treatedwith 1H,1H,2H, 2H-perfluorodecyltri-chlorosilane from a gas phaseunder vacuum condition in a desiccator. The imprint process isperformed onto a device wafer coated with an imprint polymer, bothmr-I 7010E and PMMA, using an Obducat T-NILmachine.
Si nanoridge with a depth of 100nm and width down to 10 nm.
An ‘overview’of Si nanoridges.
UNIVERSITY OF TWENTE
Silicon Ridge Nanofabrication by Advanced Edge
Lithography for Sub-10 nm NIL Applications1,2 1 1 1 2
1
1 2
Yiping Zhao, Erwin Berenschot, Henri Jansen, Niels Tas, Jurriaan Huskens,
Miko Elwenspoek
Transducers Science and Technology, Molecular Nanofabrication,
MESA+ Institute for Nanotechnology, University of Twente,
POBox 217, 7500AE, Enschede, the Netherlands
A new nanofabrication scheme is presented to form stamps useful inthermal nanoimprint lithography (T-NIL). The stamp is created in<110> single crystalline silicon using a full-wet etch-procedureincluding local oxidation of silicon (LOCOS) and employing anadapted edge lithography (detailed review of edgelithography can be found in reference [1]) on top of conventionalphoto-lithography. Ridges down to 10 nm in width have beenproduced. The silicon ridges have no inbuilt stress and are thereforeless fragile than previously fabricated oxide ridges [2,3]. The ridgesample is used as a template in T-NIL and a full 100 mm wafer sizeimprint has been successfully carried out in both polymethyl-methacrylate (PMMA) and mr-I 7010E polymer. Moreover, theimprinted pattern in PMMA is subsequently transferred into a devicewafer.
technique
Experimental Nanoimprint
Pattern Transfer
AcknowledgmentReferences
Si NanoridgesIntroduction
The grating pattern istransferred from PMMA intothe silicon device wafer. Thescallops are caused by thepulsed mode RIE procedure(SF /C F ) and can be
reduced by proper tuning ofthe etch tool.
6 4 8
SEM pictures of imprint in mr-I 7010E
Mark Smithers is acknowledged for his help in taking the SEMpictures. The project is financed by Nanoned through StrategicResearch Orientation (SRO) program Nanofabrication at theMESA+ Institute for Nanotechnology at the University of Twente.
[1] Gates, B. D.; Xu, Q.; Stewart, M.; Ryan, D.; Willson, C. G.;Whitesides, G. M., , 105, (4), 1171-1196.[2] Haneveld, J.; Berenschot, E.; Maury, P.; Jansen, H.
2006, 16, S24.[3] Zhao, Y.; Berenschot, E.; Boer, M. d.; Jansen, H.; Tas, N.;Huskens, J.; Elwenspoek, M.
2008, 18, (6), 064013
Chem. Rev. 2005Journal of
Micromechanics and Microengineering
Journal of Micromechanics andMicroengineering
