INF4420 02 Bandgaps Print

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    I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )

    INF4420Reference circuits

    Spring 2012 Jrgen Andreas Michaelsen ([email protected])

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    Outline

    Reference circuits and bias circuits

    Uses of reference circuits and bias cicuits

    MOSFET based references

    Parasitic diode based references (bandgaps)

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    I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )

    Reference circuits

    "Bandgaps". Why?

    Every analog and mixed-signalsystem needs a stable reference.

    The reference circuit presents

    some physical quantity (voltage,current, frequency, other?) Image courtesy ofTexas Instruments

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    Biasing an analog circuit

    Analog circuits needa current source toset the operating

    point.

    Circuit performancevery dependent onthe biasing.

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    I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )

    Data converters

    Binary word input is dimensionless.

    Need to multiply the dimensionless input with adimensioned (physical) reference.

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    Voltage supply regulation

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    I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )

    Temperature behaviour

    Predictable behaviour across temperature

    Constant Proportional (PTAT)

    Additionally, insensitive to supply voltage andprocess variations (PVT).

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    A very simple reference

    Careful layout gives good matching

    between resistors

    Temperature affects resistorsequally, good TC

    Precisely defined Vref as ratio ofVdd

    Precise value of Vdd is notknown (bad)

    Poor PSRR! (bad)

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    I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )

    MOSFET-R reference

    Can be used to generate abias voltage or referencevoltage.

    Better PSRR than thevoltage divider.

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    MOSFET-R reference

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    I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )

    MOSFET-R reference

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    Beta multiplier reference

    Deriving Iref from Iout

    Less dependence onVdd

    Can be used for biasingand reference

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    I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )

    Beta multiplier reference

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    Beta multiplier reference

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    I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )

    Beta multiplier reference

    As a voltage reference, take Vgs1 to be thereference voltage, Vref.

    We know the current, Iref. Use this to find

    Vgs1=Vref

    We must find the sensitivity of Vref to Vdd andT

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    Beta multiplier reference

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    I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )

    Bandgaps

    It turns out, we can make references with lesstemperature dependence using bipolartransistors.

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    Temperature independence

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    I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )

    Parasitic diodeCTAT and PTAT

    Need elements with well defined temperaturebehaviour. We will use diode connected BJTs.

    CTAT from Vbe (biased with constant current)

    PTAT from "delta Vbe" (biased with ratioed

    current or emitter area), result is the thermalvoltage, Vt

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    Bipolar transistor diodes

    Current sinked by thedevice is affected bytemperature

    Vt is the thermalvoltage(proportional to T),26 mV @ RT

    Is is also a functionof termperature

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    I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )

    PTAT voltage

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    PTAT voltage

    To find temperature behaviour, we take thederivative wrt. temperature (assume the firstderivative is constant)

    Delta Vbe isproportional toabsolutetemperature.Defined by twophysical constantsand emitter ratio, n.

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    I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )

    CTAT voltage

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    CTAT voltage

    Silicon bandgap energy as a function oftemperature

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    I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )

    CTAT voltage

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    Bandgap circuits

    We know how to generate PTAT and CTAT,and how we should combine thesecontributions for temperature independence (I.

    e. scale and add to acheive temperatureindependence).

    How do we make a circuit that realizes thissystem?

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    I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )

    Bandgap circuits

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    Bandgap circuits

    Need a circuit that cansense V1 and V2 andadjust the current

    sources so that V1=V2

    V2 = Vbe2 + Vt ln n

    ln n must be 17.2 for V2to be independent of T

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    I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )

    Bandgap circuits

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    Bandgap circuits

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    I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )

    Bandgap circuits

    This circuit is used for illustration purposes.Working with CMOS, there are a number ofissues with this circuit which we will discuss inthe following slides. We will try to find circuitswhich are more practical and CMOScompatible.

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    A more CMOS friendly BJT

    Instead of the diode connected npn that wehave used so far, we will use a pnp. This is sothat we can implement the device in a CMOS

    process without any special processing.

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    I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )

    BJT in a CMOS process

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    CMOS bandgap

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    CMOS bandgap

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    Low-voltage bandgap

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    I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )

    Low-voltage bandgap

    The core circuit is (again) the PTAT currentgenerator. Although the delta Vbe gives rise toa PTAT voltage (dropped accross R1), theabsolute Vbe of Q1 and Q2 is CTAT. Vbe1controls the current through R2 and R3. Theresult is a temperature independent current ifthe currents are scaled correctly.

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    Low-voltage bandgap

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    Stability

    Stability is a concern for any system withfeedback.

    Must make sure that we have more negativefeedback than positive.

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    I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )

    Transient response

    Transients may capacitively couple to circuitnodes.

    Faster opamp

    Decoupling (opamp stability)

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    Startup circuit

    In the discussion so far, we have assumed thecircuits are at the desireable operating point.

    We must add circuitry to make sure the circuitis not stuck at a "zero" operating point.Typically a circuit to inject some current if weare at or close to the undesireable operatingpoint. (Power on reset.)

    This is very important. Simulator does notneccessarily reveal this problem.

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    I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )

    Curvature correction

    In our analysis we have asumed the PTAT andCTAT to be constant. This assumption will leadto a non-linearity of the TC (curvature),approximately parabolic shape.

    Possible to design some function to try tomitigate this effect.

    Even possible to use Vos constructively(Cabrini, ESSCIRC 2005). Not curriculum.

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    Bandgap circuit issues

    Collector current variation CMOS compatibility (BJTs) Opamp offset voltage Opamp resistive loading Stability Startup Transient response PSRR Curvature Limited supply voltage Noise Resistor TC

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    Online resources

    A Paul Brokaw

    This is not part of thecurriculum

    http://www.archive.org/details/APaulBro1989

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