INF4420 02 Bandgaps Print
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Transcript of INF4420 02 Bandgaps Print
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I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )
INF4420Reference circuits
Spring 2012 Jrgen Andreas Michaelsen ([email protected])
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Outline
Reference circuits and bias circuits
Uses of reference circuits and bias cicuits
MOSFET based references
Parasitic diode based references (bandgaps)
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I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )
Reference circuits
"Bandgaps". Why?
Every analog and mixed-signalsystem needs a stable reference.
The reference circuit presents
some physical quantity (voltage,current, frequency, other?) Image courtesy ofTexas Instruments
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Biasing an analog circuit
Analog circuits needa current source toset the operating
point.
Circuit performancevery dependent onthe biasing.
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I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )
Data converters
Binary word input is dimensionless.
Need to multiply the dimensionless input with adimensioned (physical) reference.
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Voltage supply regulation
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I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )
Temperature behaviour
Predictable behaviour across temperature
Constant Proportional (PTAT)
Additionally, insensitive to supply voltage andprocess variations (PVT).
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A very simple reference
Careful layout gives good matching
between resistors
Temperature affects resistorsequally, good TC
Precisely defined Vref as ratio ofVdd
Precise value of Vdd is notknown (bad)
Poor PSRR! (bad)
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I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )
MOSFET-R reference
Can be used to generate abias voltage or referencevoltage.
Better PSRR than thevoltage divider.
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MOSFET-R reference
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I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )
MOSFET-R reference
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Beta multiplier reference
Deriving Iref from Iout
Less dependence onVdd
Can be used for biasingand reference
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I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )
Beta multiplier reference
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Beta multiplier reference
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I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )
Beta multiplier reference
As a voltage reference, take Vgs1 to be thereference voltage, Vref.
We know the current, Iref. Use this to find
Vgs1=Vref
We must find the sensitivity of Vref to Vdd andT
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Beta multiplier reference
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I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )
Bandgaps
It turns out, we can make references with lesstemperature dependence using bipolartransistors.
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Temperature independence
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I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )
Parasitic diodeCTAT and PTAT
Need elements with well defined temperaturebehaviour. We will use diode connected BJTs.
CTAT from Vbe (biased with constant current)
PTAT from "delta Vbe" (biased with ratioed
current or emitter area), result is the thermalvoltage, Vt
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Bipolar transistor diodes
Current sinked by thedevice is affected bytemperature
Vt is the thermalvoltage(proportional to T),26 mV @ RT
Is is also a functionof termperature
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I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )
PTAT voltage
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PTAT voltage
To find temperature behaviour, we take thederivative wrt. temperature (assume the firstderivative is constant)
Delta Vbe isproportional toabsolutetemperature.Defined by twophysical constantsand emitter ratio, n.
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I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )
CTAT voltage
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CTAT voltage
Silicon bandgap energy as a function oftemperature
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I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )
CTAT voltage
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Bandgap circuits
We know how to generate PTAT and CTAT,and how we should combine thesecontributions for temperature independence (I.
e. scale and add to acheive temperatureindependence).
How do we make a circuit that realizes thissystem?
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I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )
Bandgap circuits
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Bandgap circuits
Need a circuit that cansense V1 and V2 andadjust the current
sources so that V1=V2
V2 = Vbe2 + Vt ln n
ln n must be 17.2 for V2to be independent of T
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I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )
Bandgap circuits
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Bandgap circuits
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I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )
Bandgap circuits
This circuit is used for illustration purposes.Working with CMOS, there are a number ofissues with this circuit which we will discuss inthe following slides. We will try to find circuitswhich are more practical and CMOScompatible.
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A more CMOS friendly BJT
Instead of the diode connected npn that wehave used so far, we will use a pnp. This is sothat we can implement the device in a CMOS
process without any special processing.
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I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )
BJT in a CMOS process
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CMOS bandgap
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I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )
CMOS bandgap
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Low-voltage bandgap
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I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )
Low-voltage bandgap
The core circuit is (again) the PTAT currentgenerator. Although the delta Vbe gives rise toa PTAT voltage (dropped accross R1), theabsolute Vbe of Q1 and Q2 is CTAT. Vbe1controls the current through R2 and R3. Theresult is a temperature independent current ifthe currents are scaled correctly.
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Low-voltage bandgap
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I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )
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Stability
Stability is a concern for any system withfeedback.
Must make sure that we have more negativefeedback than positive.
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I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )
Transient response
Transients may capacitively couple to circuitnodes.
Faster opamp
Decoupling (opamp stability)
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Startup circuit
In the discussion so far, we have assumed thecircuits are at the desireable operating point.
We must add circuitry to make sure the circuitis not stuck at a "zero" operating point.Typically a circuit to inject some current if weare at or close to the undesireable operatingpoint. (Power on reset.)
This is very important. Simulator does notneccessarily reveal this problem.
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I N F 4 4 2 0 S p r i n g 2 0 1 2 R e f e r e n c e c i r c u i t s J r g e n A n d r e a s M i c h a e l s e n ( j o r g e n a m @ i f i . u i o . n o )
Curvature correction
In our analysis we have asumed the PTAT andCTAT to be constant. This assumption will leadto a non-linearity of the TC (curvature),approximately parabolic shape.
Possible to design some function to try tomitigate this effect.
Even possible to use Vos constructively(Cabrini, ESSCIRC 2005). Not curriculum.
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Bandgap circuit issues
Collector current variation CMOS compatibility (BJTs) Opamp offset voltage Opamp resistive loading Stability Startup Transient response PSRR Curvature Limited supply voltage Noise Resistor TC
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Online resources
A Paul Brokaw
This is not part of thecurriculum
http://www.archive.org/details/APaulBro1989
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