HP AN4156 8_Evaluation of Oxide Reliability Using v Ramp J Ramp Tests

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    Evaluation of Oxide Reliability

    Using V-Ramp / J-Ramp Test

    Application Note 4156-8

    HP 4155B/4156B

    Semiconductor Parameter

    Analyzer

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    Introduction

    With the size of gate area and the

    thickness of the oxide shrinking

    along with device geometries, cre-ating a reliable thin oxide has be-

    come an important issue. The

    integrity of the thin oxide in a MOS

    device is a dominant factor deter-

    mining overall reliability of a

    micro-circuit.

    This application note describes V-

    Ramp and J-Ramp tests using the

    HP 4155B/4156B semiconductor

    parameter analyzer, based on the

    JEDEC Standard No. 35.

    They can promptly give useful

    feedback to the manufacturing

    process about oxide reliability.

    What are V-Ramp and

    J-Ramp?

    Both Voltage Ramp (V-Ramp) and

    Current Ramp (J-Ramp) are one of

    so called Wefer Level Reliablity

    (WLR) tests. In V-Ramp test, volt-

    age across an oxide is increased at

    a constant linear rate until failure

    occurs. On the other hand, J-Ramp

    test increases current through an

    oxide logarithmically in linear time.

    They both record total charge

    (Qbd) and breakdown voltage

    (Vbd). These parameters are meas-

    ured on a large number of test sam-

    ples and usually plotted as

    cumulative breakdown distribution

    versus breakdown charge density

    or breakdown electrical field on

    probability chart. The manufactur-

    ing process should be maintainedso that this distribution becomes

    closer to the ideal shape. V-Ramp is

    more sensitive at detecting break-

    down at lower voltages (i.e. logic,

    micrprocessors). J-Ramp which is

    more sensitive at higher voltages

    (i.e. EPROM, flash). V-Ramp test is

    more commonly applied to test

    structures which have relatively

    large oxide areas. On the other

    hand, J-Ramp test is more often ap-

    plied to small scribe-line test

    structures.

    V-Ramp Procedure

    First, the test structure is checked

    for integrity by measuring the leak-

    age current after applying a con-

    stant voltage (Vuse).

    Second, voltage is applied to the

    test structure in steps until the ox-

    ide ruptures, compliance occurs, or

    voltage exceeds specified limit This

    ramped test should be performed

    in accumulation mode.

    Finally, a post stress analysis is

    performed to record the failure

    2

    Structure Breakdown?

    T

    F

    F

    T

    I leak > 1A

    Current Compliance

    F

    Force Vuse

    Measure I

    Force Vstress

    Measure I

    Qbd = Qbd + I*T

    T Initial Failure

    Stop Test

    Determine Failure

    Type

    Post Stress Test

    START

    END

    Initial Failure

    Stop Test

    Determine Failure

    Type

    Post Stress Test

    Qbd = 50C/cm^2

    or Compliance?

    T

    F

    F

    T

    Vmeas < Vuse

    Vmeas < .85*Vprev

    F

    Force IstressMeasure Vmeas

    T

    Force I0

    Measure V

    Qbd = Qbd + Istress*T

    Istress = Istress * FEND

    START

    Figure 1. Flowchart of V-Ramp

    Figure 2. Flowchart of J-Ramp

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    category. Figure 1 shows the flow

    of the V-Ramp Test.

    J-Ramp Procedure

    First, an initial test is made to de-

    termine the quality of the oxide ca-

    pacitor by monitoring the voltage

    after applying a current (typically

    1A). If the voltage does not reach

    the use condition voltage within

    specified time, it fails the initial

    procedure.

    Then, current is applied to the test

    structure in steps until oxide rup-

    tures, or total charge exceeds thespecified value. The current is in-

    creased by multiplying a certain

    factor (F) by the previous stress

    current. JEDEC No.35 specifies

    that F should be less than square

    root of 10. Breakdown is defined by

    a 15% drop in voltage. This ramped

    test should be performed in accu-

    mulation mode.

    Finally, post stress test is per-

    formed to determine the failure

    category. Figure 2 shows the flowof the J-Ramp Test.

    Problems with V-Ramp and

    J-Ramp

    Since oxides can rupture suddenly,

    changing the step, monitoring the

    voltage, and judgement of the exit

    condition must be done very

    quickly to insure reliable measure-

    ment results. Automation using a

    computer is mandatory for both of

    these tests. Several JEDEC require-

    ments make creating the test pro-

    gram difficult.

    It is desirable to keep the step time

    as uniform as possible to measure

    Qbd precisely and consistently.

    During the ramped test, maintain-

    ing a constant step time may be dif-

    ficult. Using the clock in the

    external computer, with its resolu-

    tion and accuracy limitations, you

    cannot set small and consistent

    step durations. Even if you use the

    sweep function of the instrument

    and set the delay time, any range

    changing that occurs during sweepwill add unpredictable step varia-

    tion as shown in Figure 3.

    HP 4155B/4156B Solution

    The HP 4155B/4156B has built-in

    HP Instrument BASIC. The whole

    V-Ramp or J-Ramp tests can be

    automated using HP Instrument

    BASIC which is suitable for instru-

    ment control and scientific calcula-

    tion. Thus, an external computer is

    no longer necessary.

    Initial stress measurement, ramped

    test, and post stress test are done

    by loading the pre-saved measure-

    ment setup files. These setup files

    can easily be created by fill-in-the-

    blank manner from the front panel.

    This eliminates one of the most dif-

    ficult parts of a program, instru-

    ment control.

    Of course, each setting parameter

    can be changed from the program

    later. So, any setting parameter

    which is determined by compli-

    cated calculation or by measured

    results can be updated later.

    You can make use of the HP

    4155B/4156B's analysis function to

    extract the resultant parameters.

    Extraction of Vbd and calculation

    of Qbd is possible by setting the

    USER FUNCTION and moving the

    marker to the breakdown point.

    Complicated programming to ana-

    lyze the data is eliminated.

    The requirement of maintaining a

    precise and constant time step

    throughout the ramp test, is accom-

    plished by using a fixed range, and

    by using the output trigger function

    (see Figure 4). The output trigger

    function gets its name from the

    ability of the HP 4156B to synchro-

    nize with external instruments.

    3

    Measure Time

    Range change

    Delay Time

    Figure 3. Duration Varies Due to Range Change and Inconsistent Measurement

    Output Trigger

    Step Delay Time

    Measure Time

    Delay Time

    Overhead

    Time

    Figure 4. Constant Duration by Using Output Trigger Function

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    Step delay time for external instru-

    ments is required to provide consis-

    tent settling time for reliable

    measurements. You can make use

    of this function to keep the step du-ration constant during the ramped

    test. Precise Qbd values can be ob-

    tained by using this function by set-

    ting time steps to 100s resolution.

    V-Ramp with the HP4155B

    / 4156B

    V-Ramp test

    The entire procedure described be-

    low is fully automated by the HP

    Instrument BASIC.

    First, an initial test checks leakage

    current when Vuse is applied to the

    test structure. To make a single

    spot test, the HP 4155B/4156B is

    set to sampling mode and the num-

    ber of steps is set to "1". The post

    stress test, which is made at the

    end of entire test, is identical to the

    initial test. Both measurements are

    performed by loading presaved

    measurement setup files. The setup

    file can easily be created or modi-

    fied from the front panel.

    Then the ramped test is performed

    using the sweep measurement

    function. Figure 5 and 6 show the

    SWEEP SETUP and MEASURE

    SETUP pages.

    Constant duration through out the

    ramped test is desirable. The fol-

    lowing setup procedure maintains

    a constant step time interval during

    the ramped test.

    1 Enable trigger output function

    in OUTPUT SEQUENCE page

    (Figure 7).

    2 Set DELAY TIME in SWEEP

    SETUP page.

    3 Set STEP DELAY time in OUT-

    PUT SEQUENCE page.

    4 Set measurement range to

    FIXED range in MEASURE

    SETUP page.

    4

    ME A S U R E : S WE E P S E T U P 9 4 J U N 2 5 0 6 : 3 1 A M

    V o l t a g e R a mp S w e e p M e a s u r e me n t

    * V A R I A B L E V A R 1 V A R 2

    U N I T S MU 1 : MP

    N A ME V g

    S WE E P M O D E S I N G L E

    L I N/ L O G L I NE A R

    S T A R T - 5 . 0 0 0 V

    S T O P - 4 0 . 0 0 0 V

    S T E P - 5 0 . 0 mV

    N O O F S T E P 7 0 1

    C O M P L I A N C E 5 0 . 0 0 m A

    P O WE R C O M P O F F

    * T I M I N G

    H OL D T I ME 0 . 0 0 0 0 s

    D E L A Y T I ME 4 0 . 0 ms * S WE E P S T OP A T C OMP L I A N C E S t a t u s

    * C O N S T A N T

    U N I T S MU 4 : MP V S U 1 V S U 2

    N A ME V s u b V S U 1 V S U 2

    MO D E V V V

    S O U RC E 0 . 0 0 0 0 V 0 . 0 0 0 0 V 0 . 0 0 0 0 V - - - - - - - - -

    C O MP L I A N C E 1 0 0 . 0 0 mA - - - - - - - - - - - - - - - - - - - - - - - - - - -

    ME A S U R E : ME A S U R E S E T U P 9 4 J U N 3 0 0 9 : 1 0 A M

    V o l t a g e R a mp S w e e p M e a s u r e me n t

    * M E A S U R E M E N T R A N G E

    U N I T N A ME R A N G E Z E R O C A N C E L OF F

    S MU 1 : MP I g F I X E D 1 0 0 mA O F F [ 1 n A ]

    S MU 4 : MP I s u b F I X E D 1 0 0 mA O F F [ 1 n A ]

    V MU 1 V MU 1 A U T O - - - - - O F F

    V MU 2 V MU 2 A U T O - - - - - O F F

    ( * : Ol d d a t a i s u s e d . )

    * I N T E G T I M E

    T I ME N P L C

    S H O R T @ 6 4 0 u s 0 . 0 3 2

    ME D 2 0 . 0 ms 1L ON G 3 2 0 . ms 1 6

    * WA I T T I M E

    0 * ( D E F A U L T WA I T T I ME )

    ME A S U R E : O U T P U T S E Q U E N C E 9 4 J U N 3 0 0 9 : 1 3 A M

    V o l t a g e R a mp S w e e p M e a s u r e m e n t

    * O U T P U T S E Q U E N C E * T R I G G E R S E T U P

    U NI T N A ME MO D E E N A B L E / D I S A B L E E N A B L E

    1 S MU 4 : M P V s u b V F U N C T I O N T R I G O U T

    2 S MU 1 : M P V g V S T E P D E L A Y 2 1 . 4 ms

    3 S MU 2 : M P P O L A R I T Y P O S I T I V E

    4 S MU 3 : M P

    5 V S U 1 V S U 1 V

    6 V S U 2 V S U 2 V

    7 S MU 5 : M P

    8 S MU 6 : M P

    9 P G U 1

    1 0 P G U 2

    Figure 5. SWEEP SETUP Page

    Figure 6. MEASURE SETUP Page

    Figure 7. OUTPUT SEQUENCE Page

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    5 Set WAIT TIME to zero in

    MEASURE SETUP page.

    JEDEC No.35 specifies that the

    ramp rate should be from 0.1 to 1.0MV / cmsec. If you define step volt-

    age (Vstep), the duration of each

    step is calculated as follows.

    Duration=Vstep/(Ramp rate Tox)[sec]

    Tox: Oxide thickness [cm]

    The delay time and step delay time

    should be chosen so that they sat-

    isfy the following equations.

    In case of V-Ramp:

    Duration=1.2 ms + (DELAY TIME)

    +(STEP DELAY - 100 s)

    In case of J-Ramp:

    Duration=1.5 ms + (DELAY TIME)

    + (STEP DELAY - 100 s)

    where: 1.2 ms and 1.5 ms are meas-

    urement overhead.

    DELAY TIME should be set large

    and according to the above formula

    so that the measurement is per-

    formed close to the end of eachstep. STEP DELAY time must be

    larger than sum of setting INTEG

    TIME and measurement overhead.

    To keep the step duration constant,

    don't use USER FUNCTIONs while

    voltage is swept. Analysis with

    USER FUNCTIONs can be done af-

    ter the ramped test procedure is

    completed.

    Select SWEEP STOP AT COMPLI-

    ANCE Status in the SWEEP SETUP

    page so that sweep aborts immedi-ately if compliance occurs.

    The calculation of Qbd in equation

    below, can be performed by a HP

    4156B USER FUNCTION. The set

    up of USER FUNCTION should be

    made after the ramped measure-

    ment to keep the duration con-

    stant. Time is defined as

    multiplication of measurement data

    (@INDEX) and step duration. When

    the marker is moved to the break-

    down point, Qbd appears on the

    GRAPHIC page.

    Qbd =i(t) dt

    The search for breakdown voltage

    is made in the HP Instrument BA-

    SIC program. JEDEC defines

    breakdwon voltage as the voltage

    when current becomes ten times

    larger than the expected current or

    the slope (log Ig /Vg) changesby between 1.5 to 3. Expected cur-

    rent is decided by either a pre-

    measured curve or theoretical

    curve. Theoretical current is called

    the Fowler-Nordheim current,

    which is given as follows.

    J = A E2 e(-B / E)

    where

    A , B : Constants in terms of effec-

    tive mass and barrier

    height.

    E : Electric field

    Or, since current starts flowing

    right after oxide rupture, it will be

    OK to detect the breakdown volt-

    age one step before the Ig compli-

    ance as a simplified alternative.

    Another V-ramp test for

    studying ultra thin oxide

    leakages

    The main purpose of WLR V-ramp

    tests is to monitor the qualitative

    tendency of the process. Parame-

    ters such as Qbd give prompt proc-

    ess control feedback by quickly

    stepping the stress voltage to

    5

    C H A N N E L S : U S E R F U N CT I ON D E F I N I T I ON 9 4 J U N 1 8 1 0 : 5 7 A M

    V o l t a g e R a mp S w e e p M e a s u r e me n t

    * U S E R F U N C T I O N

    N A M E U N I T D E F I N I T I O N

    T i me s e c @I N D E X * . 0 6 2 5

    V b d V @MY 2

    Q b d C I N T E G ( I g , T i me )

    G R A P H / L I S T : G R A P H I C S ME D I U M 9 4 J U N2 2 0 3 : 4 8 A M

    o

    *

    V o l t a g e R a m p S w e e p M e a s u r e m e n t

    M A R K E R ( 2 8 . 0 6 2 5 0 0 0 s e c - 5 . 2 4 2 5 m A - 2 7 . 4 0 0 V )

    V b d - 2 7 . 4 0 0 0 0 0 0 0 0 V

    ( A ) Q b d - 1 1 . 3 3 3 5 0 9 3 7 5 m C ( V )

    - 1 . 0 0 - 4 0 . 0

    I g V g

    d e c a d e - - - - - -

    / d i v / d i v

    - 1 . 0 0 p - 5 . 0 0

    0 . 0 0 T i m e ( s e c ) 5 . 0 0 / d i v 4 2 . 0

    Figure 8. USER FUNC SETUP Page

    Figure 9. V-Ramp Example Measurement Result

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    breakdown, in uniform time

    increments.

    For thin oxides (less than 100 ang-

    stroms thick), low voltage "directtunneling" leakage must be accu-

    rately studied. The HP 4156B is ide-

    ally suited for this purpose due to

    its ability to measure currents

    down to fA levels at high speeds.

    Use auto ranging in the MEASURE

    SETUP page to increase accuracy.

    Add a hold time only if you sweep

    from a non-zero start point. Add de-

    lay time only for large voltage step

    size or if probes are not fully

    guarded. Leakage sweeps, such asshown in Figure 10 can be made in

    less than one minute using the HP

    4156B with a well guarded probe

    station such as the Cascade Sum-

    mit series prober.

    J-Ramp with the HP

    4155B/4156B

    The entire procedure described be-

    low is fully automated by the HP

    Instrument BASIC.

    The initial test is performed usingthe sampling mode function. Speci-

    fied current is forced and voltage is

    repeatedly measured with constant

    time interval. The measurement

    stops when the voltage reaches the

    specified threshold value, in this

    case 2V. Figure 11 and Figure 12

    show CHANNEL DEFINITION and

    SAMPLING SETUP page

    respectively.

    After the initial test, the ramped

    test is performed using the sweepmeasurement function. Figure 13

    and Figure 14 show SWEEP SETUP

    and MEASURE SETUP page

    respectively.

    Also with the J-Ramp test, constant

    step time duration throughout the

    ramped test is desirable. The dura-

    tion is fixed constant by setting the

    output trigger function, delay time,

    6

    G R A P H / L I S T : G R A P H I C S S H O R T 9 4 J U N 3 0 0 8 : 4 5 A M

    o

    . 0 0 1 C M 2 C A P T O X = 1 6 0 A n g s t r o m s

    M A R K E R ( - 2 2 . 7 5 0 V - 2 7 . 5 9 0 m A )

    ( A )

    - 1 0 0 . m

    I g

    d e c a d e

    / d i v

    - 1 0 f

    - 5 . 0 0 V g ( V ) 2 . 0 0 / d i v - 2 5 . 0

    C H A N N E L S : C H A N N E L D E F I N I T I O N 9 4 J U N 1 9 0 0 : 1 0 P M

    * M E A S U R E ME N T M O D E

    S A MP L I NG

    * C H A N N E L S

    ME A S U R E S T B Y S E R I E S

    U N I T V N A ME I N A ME MO D E F C T N R E S I S T A N C E

    S MU 1 : MP V g I g I C O N S T 0 o h m

    S MU 2 : MP 0 o h m

    S M U 3 : M P

    S MU 4 : MP V s b I s b V C O N S T

    S M U 5 : M P

    S M U 6 : M P

    V S U 1 V S U 1 - - - - - - - V C O N S T

    V S U 2 V S U 2 - - - - - - - V C O N S T

    V MU 1 - - - - - - - - - - - - - - - -

    V MU 2 - - - - - - - - - - - - - - - -

    P GU 1 - - - - - - -

    P GU 2 - - - - - - -

    G N D U - - - - - - - - - - -

    ME A S U R E : S A MP L I N G S E T U P 9 4 J U N 1 9 0 0 : 1 2 P M

    * S A MP L I N G P A R A ME T E R * S T O P C ON DI T I O N

    MO D E L I N E A R E N A B L E / D I S A B L E E N A B L E

    I N I T I A L I N T E R V A L 1 0 . 0 0 ms E N A B L E D E L A Y 0 . 0 0 0 0 0 0 0 s

    N O . O F S A MP L E S 1 0 0 N A ME V g

    T O T A L S A MP . T I ME 1 . 0 0 s T H R E S H O L D 2 . 0 0 0 0 0 0 0 V

    E V E N T | V a l | > | T h |

    H O L D T I M E 0 . 0 0 0 0 0 0 s E V E N T N O . 1

    F I L T E R O N

    * C O N S T A N T

    U N I T S MU 1 : MP S MU 4 : MP V S U 1 V S U 2

    N A ME I g V s b V S U 1 V S U 2

    MO D E I V V V

    S O U R C E 0 . 0 0 0 0 A 0 . 0 0 0 0 V 0 . 0 0 0 0 V 0 . 0 0 0 0 V

    C O MP L I A N C E 1 0 0 . 0 0 V 1 0 0 . 0 0 mA - - - - - - - - - - - - - - - - - -

    Figure 10. Low Level Ig-Vg Characteristics Using Auto Ranging

    Figure 11. CHANNEL DEFINITION Page (Initial Test)

    Figure 12. SAMPLING SETUP Page (Initial Test)

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    step delay time, and zero wait time

    as explained in the V-Ramp test.

    The current is increased as IFn (n

    is integer). To increase the currentwhile satisfying this equation, use

    the LOG sweep function of the HP

    4155B/4156B. Three kinds of F val-

    ues can be chosen, which are

    10(1/10), 10(1/25), and 10(1/50). The stop

    current is calculated by solving the

    following equation.

    where

    MaxQ : Maximum charge density

    given by user (50 C/cm2 in

    JEDEC No.35)Area : Oxide area [cm2]

    In case of the HP 4155B/4156B, the

    sweep measurement won't stop

    right after the breakdown occurs.

    After the specified sweep is over, it

    can quickly search for the break-

    down point. Figure 15 is an exam-

    ple of J-Ramp ramped test.

    Conclusion

    The HP 4155B/4156B provides you

    with features that greatly simplify

    V-Ramp / J-Ramp tests. Pre-saved

    setup files and auto analysis drasti-

    cally reduce the programming ef-

    fort. The built in HP Instrument

    BASIC controller eliminates the

    need for an external computer. Pre-

    cise Qbd value is acquired by main-

    taining a constant step time

    duration through out the ramped

    test.

    7

    ME A S U R E : S WE E P S E T U P 9 4 J U N 1 8 1 1 : 0 8 A M

    * V A R I A B L E V A R 1 V A R 2

    U N I T S MU 1 : M P

    N A ME I g

    S WE E P M O D E S I N G L E

    L I N / L O G L O G 1 0

    S T A R T - 1 . 0 0 0 u A

    S T O P - 5 0 . 0 0 mA

    S T E P - - - - - - - - -

    N O O F S T E P 4 7

    C O MP L I A N C E 4 0 . 0 0 0 V

    P O WE R C O M P O F F

    * T I M I N G

    H OL D T I ME 0 . 0 0 0 0 s

    D E L A Y T I ME 2 5 . 0 ms * S WE E P S T O P A T C OMP L I A N C E S t a t u s

    * C O N S T A N T

    U N I T S MU 4 : M P V S U 1 V S U 2

    N A ME V s b V S U 1 V S U 2

    MO D E V V V

    S O U RC E 0 . 0 0 0 0 V 0 . 0 0 0 0 V 0 . 0 0 0 0 V - - - - - - - - -

    C O MP L I A N C E 1 0 0 . 0 0 m A - - - - - - - - - - - - - - - - - - - - - - - - - - -

    ME A S U R E : ME A S U R E S E T U P 9 4 J U N 3 0 0 9 : 0 7 A M

    * M E A S U R E M E N T R A N G E

    U N I T N A ME R A N G E Z E R O C A N C E L OF F

    S MU 1 : MP V g F I X E D 4 0 V O F F

    S MU 4 : MP I s b F I X E D 1 0 0 mA O F F [ 1 n A ]

    ( * : O l d d a t a i s u s e d . )

    * I N T E G T I M E

    T I ME N P L C

    S H O R T @ 6 4 0 u s 0 . 0 3 2

    ME D 2 0 . 0 ms 1

    L O N G 3 2 0 . ms 1 6

    * WA I T T I M E

    0 * ( D E F A U L T WA I T T I ME )

    G R A P H / L I S T : G R A P H I C S S H O R T 9 4 J U L 0 5 0 8 : 5 1 A M

    o

    *

    C U R S O R ( - 2 . 3 5 0 0 0 0 0 0 m s e c 1 6 . 6 6 6 6 8 8 6 6 7 G A - 1 0 0 . 8 7 0 8 3 1 7 5 V )

    M A R K E R ( 2 . 1 5 0 0 0 0 0 0 s e c - 1 9 . 5 1 m A - 2 7 . 1 1 2 4 V )

    Q b d - 4 . 1 6 6 7 9 4 7 5 0 0 m C

    ( A ) V b d - 2 7 . 1 1 2 4 0 0 0 0 0 V ( V )

    - 1 . 0 0 - 4 1 . 0

    I g V g

    d e c a d e - - - - - -

    / d i v / d i v

    - 1 0 0 . n 0 . 0 0

    0 . 0 0 T i m e ( s e c ) 2 0 0 . m / d i v 2 . 3 5

    Figure 13. SWEEP SETUP Page

    Figure 14. MEASURE SETUP Page

    Figure 15. J-Ramp Example Measurement Result

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    For more information about Hewlett-Packard test and measurement products,applications, services, and for a currentsales office listing, visit our web site:http://www.hp.com/go/tmdir

    You can also contact one of the followingcenters and ask for a test andmeasurement sales representative.

    United States:Hewlett-Packard CompanyTest and Measurement Call CenterP.O. Box 4026Englewood, CO 80155-4026(tel) 1 800 452 4844

    Canada:Hewlett-Packard Canada Ltd.5150 Spectrum WayMississauga, OntarioL4W 5G1(tel) (905) 206 4725

    Europe:Hewlett-Packard CompanyEuropean Marketing CentreP.O. Box 9991180 AZ AmstelveenThe Netherlands(tel) (31 20) 547 9900

    Japan:Hewlett-Packard Japan Ltd.Measurement Assistance Center9-1, Takakura-Cho, Hachioji-Shi,Tokyo 192, Japan(tel) (81) 426 56 7832(fax) (81) 426 56 7840

    Latin America:Hewlett-Packard CompanyLatin American Region Headquarters5200 Blue Lagoon Drive9th FloorMiami, Florida 33126U.S.A.(tel) (305) 267 4245/4220(fax) (305) 267 4288

    Australia/New Zealand:Hewlett-Packard Australia Ltd.31-41 Joseph StreetBlackburn, Victoria 3130

    Australia(tel) 1 800 629 485 (Australia)(tel) 0 800 738 378 (New Zealand)

    (fax) (61 3) 9210 5489

    Asia Pacific:Hewlett-Packard Asia Pacific Ltd17-21/F Shell Tower, Times Square,1 Matheson Street, Causeway Bay,Hong Kong(tel) (852) 2599 7777(fax) (852) 2506 9285

    Hewlett-Packard Company 1998Data subject to changePrinted in Japan 1/19985963-1248E

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